一种高纯多晶硅块清洗方法及其装置

By using a gradient acid replacement method and measuring the etching thickness of silicon blocks with regular surface shapes, the problem of uneven etching and waste caused by the decrease in the concentration of mixed acid solution was solved, achieving efficient and uniform cleaning of polycrystalline silicon blocks, thus improving product quality and production efficiency.

CN118577559BActive Publication Date: 2026-07-17JIANGSU XINHUA SEMICON TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
JIANGSU XINHUA SEMICON TECH CO LTD
Filing Date
2024-05-31
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In existing technologies, the effective concentration of the mixed acid solution decreases during the cleaning process of high-purity polycrystalline silicon blocks, resulting in uneven etching, discoloration, and significant waste of the mixed acid solution, which affects product quality and production efficiency.

Method used

A gradient acid replacement method from high to low is adopted. Several sets of initial cleaning solutions with progressively decreasing mass ratios of hydrofluoric acid and nitric acid are prepared and recycled. The timing of acid replacement is determined by detecting the etching thickness of silicon blocks with regular surface shapes to ensure that the acid concentration meets the etching requirements.

Benefits of technology

This method achieves uniform etching of the silicon block surface, avoids acid waste, improves product quality and production efficiency, and reduces the negative impact of equipment costs and testing errors.

✦ Generated by Eureka AI based on patent content.

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Abstract

本发明属于电子级多晶硅制备技术领域,具体涉及一种高纯多晶硅块清洗方法及其装置,包括如下步骤:S1、配制氢氟酸与硝酸质量比梯度依次降低的若干组初始清洗液;S2、将待清洗硅块,按照氢氟酸与硝酸质量比梯度降低的顺序在每组初始清洗液中依次清洗;S3、清洗若干批次硅块后,换酸,将氢氟酸与硝酸质量比最低的清洗液排出,添加与初始清洗液中氢氟酸与硝酸的质量比最高的清洗液等同的清洗液,其余组的清洗液顺序按照氢氟酸与硝酸的质量比由高到低,重新排列,得到若干组二次清洗液;S4、将待清洗硅块,按照氢氟酸与硝酸质量比梯度降低的顺序在每组二次清洗液中依次清洗;S5、重复步骤S2~S4,使清洗液循环使用。
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