A method of opening a glass substrate

Abstract

The application discloses a glass substrate hole opening method, which is suitable for opening a glass through hole with a diameter of 40-300 mu m. The glass substrate hole opening method comprises the following steps: providing a glass substrate, determining the diameter D and the center of the hole to be opened on the glass substrate, irradiating a laser at the diameter D' to form a ring-shaped modified area with an outer diameter of D'; irradiating a laser on the ring-shaped modified area to form a plurality of light spots, i.e. a plurality of circular modified areas; and performing etching treatment on the glass substrate to form a through hole with a diameter of D; wherein D'=(0.7-0.9)*D. The application combines two kinds of laser modification methods for large hole (>=100 mu m) modification and small hole (100 mu m) modification, which can effectively improve the etching efficiency and effectively reduce the taper of the through hole.

Description

Technical Field

[0001] This invention relates to the field of glass plate opening technology, and specifically to a novel method for opening holes in glass substrates. Background Technology

[0002] For glass substrates, the common method for creating holes is to first perform laser modification on the glass substrate, and then use an etching solution to etch the laser-modified area to form a through hole.

[0003] For different opening sizes, laser modification treatment mainly involves the following two methods:

[0004] (i) For through holes with a large aperture D0 (≥100μm), it is usually necessary to use a laser to irradiate the plate-shaped glass surface to form a ring-shaped spot with an outer diameter of D0 / 2. Figure 1 The annular light spot is the modified area, which is then etched to remove the glass inside the modified area, thereby forming a through hole with a diameter of D0.

[0005] (II) For through holes with a small aperture D0 (<100μm), laser irradiation is directly applied to modify the design location of the through hole, forming several circular light spots with a diameter of 2μm. Figure 2 The circular light spot consists of an unmodified area, a modified area, and an intermediate high-temperature vaporization area from the outside to the inside. After etching, the modified area can form a D0 through hole.

[0006] In method (i) above, due to the larger aperture, simultaneous etching inside and outside the modified area results in a lower taper of the through-hole, but the etching rate is slow and the required etching time is long. In method (ii), although the aperture is smaller and the etching time is shorter, the resulting through-hole taper is higher. Summary of the Invention

[0007] The purpose of this invention is to provide a method for opening holes in a glass substrate, which is suitable for opening glass through holes with a diameter of 40-300μm, and has a fast opening speed and low taper of the formed through hole.

[0008] To achieve this objective, the present invention adopts the following technical solution:

[0009] A method for creating holes in a glass substrate is provided, applicable to creating glass through-holes with a diameter of 40–300 μm, specifically including the following steps:

[0010] A glass substrate is provided, the aperture D and center of the hole to be opened on the glass substrate are determined, and a laser is used to irradiate the aperture D′ to form a ring-shaped modified area.

[0011] Laser is used to irradiate the annular modification area point by point, forming several light spots, i.e. several circular modification areas, within the annular modification area;

[0012] The glass substrate is etched to form a through hole with a diameter of D;

[0013] Where D′=(0.7~0.9)D.

[0014] Furthermore, the interval between the centers of two adjacent circular modified regions is (D~D′) / 2.

[0015] Furthermore, the distance between the center of the circular modified region near the annular modified region and the inner circle of the annular modified region is 4–5.5 μm.

[0016] Furthermore, the distance between the center of the circular modified region near the annular modified region and the inner circle of the annular modified region is 5 μm.

[0017] The beneficial effects of this invention are as follows: This invention combines two laser modification methods—large-aperture (≥100μm) modification and small-aperture (<100μm) modification—to perform laser modification on glass substrates, followed by etching to form through-holes. This effectively improves etching efficiency and reduces the taper of the through-holes. The glass substrate hole-opening method of this invention is suitable for creating glass through-holes with apertures of 40-300μm. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments of the present invention will be briefly described below. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0019] Figure 1 This is a schematic diagram of existing laser modification techniques for glass substrates with apertures ≥100μm.

[0020] Figure 2 This is a schematic diagram of existing laser modification of glass substrates with apertures <100μm.

[0021] Figure 3 This is a schematic diagram of laser modification of a glass substrate according to Embodiment 1 of the present invention.

[0022] Figure 4 This is a schematic diagram of the through-hole after etching on the glass substrate in Embodiment 1 of the present invention.

[0023] Figure 5 This is a schematic diagram of the through-hole after etching on the glass substrate in Embodiment 2 of the present invention. Detailed Implementation

[0024] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0025] The accompanying drawings are for illustrative purposes only and are schematic diagrams, not actual images. They should not be construed as limiting the scope of this patent. To better illustrate the embodiments of the present invention, some parts in the drawings may be omitted, enlarged, or reduced, and do not represent the actual dimensions of the product. It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.

[0026] Example 1

[0027] Laser modification: such as Figure 3 As shown, a glass substrate is provided. The aperture of the hole to be opened is determined to be 200 μm. After determining the opening position (center), a ring-shaped modified region with an outer diameter of 180 μm is formed by laser irradiation at an aperture of 180 μm. Then, the laser continues to irradiate the ring-shaped modified region point by point to form several light spots (several circular modified regions). The interval between the centers of two adjacent light spots is 10 μm, and the distance between the center of the light spot near the ring-shaped modified region and the inner circle of the ring-shaped modified region is 5 μm.

[0028] Figure 3 The annular modification area shown in the diagram contains several circular modification areas that form several rings, which are actually composed of points spaced apart from each other. A detailed enlarged view of the area is not shown here.

[0029] Etching: The laser-modified glass substrate was etched using an etching solution. After 90 minutes of etching, a through-hole with a diameter of 200 μm was formed. Figure 4 ).

[0030] After measurement and calculation, the taper of the through hole is 4.15°.

[0031] Example 2

[0032] Laser modification: A glass substrate is provided. The aperture of the hole to be opened is determined to be 60 μm. After determining the opening position (center), a ring-shaped modification area with an outer diameter of 54 μm is formed by laser irradiation at the aperture of 54 μm. Then, the laser is used to irradiate the ring-shaped modification area point by point to form a number of light spots (a number of circular modification areas). The interval between the centers of two adjacent light spots is 3 μm, and the distance between the center of the light spot close to the ring-shaped modification area and the inner circle of the ring-shaped modification area is 5 μm.

[0033] Etching: The laser-modified glass substrate was etched using an etching solution. After 30 minutes of etching, a through-hole with a diameter of 60 μm was formed. Figure 5 ).

[0034] After measurement and calculation, the taper of the through hole is 0.15°.

[0035] Comparative Example 1

[0036] Laser modification: A glass substrate is provided, the aperture of the hole to be opened is determined to be 200μm, and the opening position (center) is determined. A ring-shaped modification area with an outer diameter of 100μm is formed by laser irradiation at the aperture diameter of 100μm.

[0037] Etching: The laser-modified glass substrate was etched using an etching solution. After 90 minutes of etching, a through hole with a diameter of 200 μm was formed (not shown in the attached drawings of the specification).

[0038] After measurement and calculation, the taper of the through hole is 4.42°.

[0039] Comparative Example 2

[0040] Laser modification: A glass substrate is provided, the aperture of the hole to be opened is determined to be 60μm, and the opening position (center) is determined. A laser is used to irradiate the design area of ​​the through hole point by point to form a number of light spots (a number of circular modification areas). The interval between the centers of two adjacent light spots is 3μm, and the distance between the center of the light spot near the circumference of the through hole design and the circumference is 5μm.

[0041] Etching: The laser-modified glass substrate was etched using an etching solution. After 25 minutes of etching, a through hole with a diameter of 60 μm was formed (not shown in the attached figure of the specification).

[0042] After measurement and calculation, the taper of the through hole is 0.25°.

[0043] It should be stated that the above-described specific embodiments are merely preferred embodiments of the present invention and the technical principles employed. Those skilled in the art should understand that various modifications, equivalent substitutions, and variations can be made to the present invention. However, such variations, as long as they do not depart from the spirit of the present invention, should be within the scope of protection of the present invention. Furthermore, some terminology used in this specification and claims is not limiting, but merely for ease of description.

Claims

1. A method for creating holes in a glass substrate, applicable to creating glass through-holes with a diameter of 40–300 μm, characterized in that, A glass substrate is provided, the aperture D and center of the hole to be opened on the glass substrate are determined, and a laser is used to irradiate the aperture D′ to form an annular modified region with an outer diameter D′. Laser is used to irradiate the annular modification area, forming several light spots, i.e., several circular modification areas, within the annular modification area; The glass substrate is etched to form a through hole with a diameter of D; Where D′=(0.7~0.9)*D.

2. The method for opening holes in a glass substrate according to claim 1, characterized in that, The interval between the centers of two adjacent circular modified regions is ≤ (DD′) / 2.

3. The method for opening holes in a glass substrate according to claim 1, characterized in that, The distance between the center of the circular modified region near the annular modified region and the inner circle of the annular modified region is 4–5.5 μm.

4. The method for opening holes in a glass substrate according to claim 1, characterized in that, The distance between the center of the circular modified region near the annular modified region and the inner circle of the annular modified region is 5 μm.

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