Privacy coated glass and method of making

Abstract

The application discloses privacy coated glass and a preparation method thereof, and belongs to the technical field of privacy coated glass.The privacy coated glass comprises a substrate and a coating layer from bottom to top.The coating layer comprises a first dielectric layer, a first light-absorbing layer, a second dielectric transition layer, a first dielectric light-interference layer, a second light-absorbing layer, a third dielectric transition layer and a second dielectric light-interference layer from bottom to top.By changing the combination of film layer materials and film layer structures, and by utilizing the interference and absorption characteristics of the multilayer film layer, a kind of coated glass with dark color, low transmittance and privacy function is developed, which can meet the privacy function and aesthetic requirements of urban buildings and can fill the market gap.

Description

Technical Field

[0001] This invention relates to the field of privacy coated glass technology, and more particularly to a privacy coated glass and its preparation method. Background Technology

[0002] Privacy glass is a special type of glass that makes it difficult to see inside from the outside, while allowing visibility from the inside. It is a one-way transparent glass, typically with a special coating. Special pigments are added during the glass manufacturing process, allowing for the use of dark-tinted glass in architectural partitions, screens, and car side windows to provide privacy. While improving privacy in buildings and vehicles, it also blocks sunlight, offering some heat insulation. However, there is still a market gap in the field for privacy glass with low transmittance, dark tint, and good privacy features. Summary of the Invention

[0003] The main objective of this invention is to provide a privacy-coated glass with a deep color, low transmittance, and strong shielding function, as well as a method for its preparation, filling the gap in the privacy-coated glass market.

[0004] To achieve the above objectives, the present invention provides a privacy coated glass, which comprises, from bottom to top, a substrate and a coating layer, wherein the coating layer comprises, from bottom to top, a first dielectric layer, a first light absorption layer, a second dielectric transition layer, a first dielectric light interference layer, a second light absorption layer, a third dielectric transition layer, and a second dielectric light interference layer.

[0005] In some embodiments of the present invention, the first dielectric layer comprises TiOx;

[0006] And / or, the first light-absorbing layer comprises NiCrNx;

[0007] And / or, the second dielectric transition layer includes AZOx;

[0008] And / or, the first dielectric light interference layer comprises SiNx;

[0009] And / or, the second light-absorbing layer comprises Cr;

[0010] And / or, the third dielectric transition layer includes AZOx;

[0011] And / or, the second dielectric light interference layer comprises SiNx.

[0012] In some embodiments of the present invention, the thickness of the first dielectric layer is 40 nm to 42 nm;

[0013] And / or, the thickness of the first light-absorbing layer is 9.5 nm to 11 nm;

[0014] And / or, the thickness of the second dielectric transition layer is 4 nm to 6 nm;

[0015] And / or, the thickness of the first dielectric light interference layer is 85nm to 90nm;

[0016] And / or, the thickness of the second light-absorbing layer is 4nm to 5nm;

[0017] And / or, the thickness of the third dielectric transition layer is 4 nm to 6 nm;

[0018] And / or, the thickness of the second dielectric light interference layer is 18nm to 22nm.

[0019] In some embodiments of the present invention, the privacy-coated glass further includes a top protective layer disposed on the upper surface of the second dielectric light interference layer; and / or, the privacy-coated glass further includes a GeSe layer disposed between the substrate and the first dielectric layer.

[0020] In some embodiments of the present invention, the privacy-coated glass further includes a top protective layer with a thickness of 2 nm to 4 nm; and / or, the privacy-coated glass further includes a GeSe layer with a thickness of 2 nm to 4 nm.

[0021] The present invention also provides a method for preparing privacy-coated glass as described above, comprising the following steps:

[0022] A first dielectric layer is sputtered onto the surface of a glass substrate;

[0023] A first light-absorbing layer is sputtered onto the surface of the first dielectric layer;

[0024] A second dielectric transition layer is sputtered onto the surface of the first light-absorbing layer;

[0025] A first dielectric light interference layer is sputtered onto the surface of the second dielectric transition layer;

[0026] A second light-absorbing layer is sputtered onto the surface of the first dielectric light interference layer;

[0027] A third dielectric transition layer is sputtered onto the surface of the second light-absorbing layer;

[0028] A second dielectric light interference layer is sputtered onto the surface of the third dielectric transition layer.

[0029] In some embodiments of the present invention, titanium metal is used as the target material in the step of preparing the first dielectric layer;

[0030] In the step of preparing the first light-absorbing layer, nickel-chromium is used as the target material;

[0031] In the step of preparing the second dielectric transition layer, ceramic zinc oxide is used as the target material;

[0032] In the step of preparing the first dielectric optical interference layer, silicon aluminum is used as the target material;

[0033] In the step of preparing the second light-absorbing layer, Cr is used as the target material;

[0034] In the step of preparing the third dielectric transition layer, ceramic zinc oxide is used as the target material;

[0035] In the step of preparing the second dielectric light interference layer, silicon aluminum is used as the target material.

[0036] In some embodiments of the present invention, the first dielectric layer is prepared under oxygen conditions;

[0037] And / or, the first light-absorbing layer is prepared under nitrogen and argon conditions;

[0038] And / or, the second medium transition layer is prepared under argon and oxygen conditions;

[0039] And / or, prepare the first dielectric light interference layer under nitrogen and argon conditions;

[0040] And / or, prepare a second light-absorbing layer under argon and oxygen conditions;

[0041] And / or, prepare a third medium transition layer under argon and oxygen conditions;

[0042] And / or, prepare a second dielectric light interference layer under nitrogen and argon conditions.

[0043] In some embodiments of the present invention, a top protective layer is sputtered onto the surface of the second dielectric light interference layer; and / or, a GeSe layer is prepared on the surface of the glass substrate, and then the first dielectric layer is sputtered onto the surface of the GeSe layer.

[0044] In some embodiments of the present invention, a top protective layer is sputtered onto the surface of the second dielectric optical interference layer, and zirconium metal is used as the target material in the step of preparing the top protective layer.

[0045] The beneficial effects that this invention can achieve are:

[0046] This invention uses conventional coating materials and, by changing the combination of film materials and film structure, and utilizing the interference and absorption characteristics of multiple film layers on light, develops a dark-colored, low-transmittance coated glass with privacy function, which can meet the privacy and aesthetic requirements of urban buildings and fill a market gap. Attached Figure Description

[0047] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0048] Figure 1 This is a schematic diagram of the structure of a privacy-coated glass according to an embodiment of the present invention.

[0049] Figure 2 This is a schematic diagram of the structure of privacy-coated glass according to another embodiment of the present invention.

[0050] The labels in the attached drawings are:

[0051] 22 First dielectric layer 23 First light absorption layer 24 Second dielectric transition layer 25 First dielectric light interference layer 26 Second light-absorbing layer 27 Third medium transition layer 28 Second dielectric light interference layer 29 Top protective layer

[0052] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0053] It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0054] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0055] In this invention, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. Furthermore, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. If the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this invention.

[0056] This invention provides a privacy-coated glass, as shown in the reference. Figure 1 The privacy-coated glass comprises, from bottom to top, a substrate 10 and a coating layer. The coating layer comprises, from bottom to top, a first dielectric layer 22, a first light absorption layer 23, a second dielectric transition layer 24, a first dielectric light interference layer 25, a second light absorption layer 26, a third dielectric transition layer 27, and a second dielectric light interference layer 28.

[0057] This invention reduces the light transmittance and light reflection of coated glass. The designed multi-layer thin film structure causes mutual interference and absorption of light. For example, the first light absorption layer and the second light absorption layer are set to reduce the light transmission intensity and reflection intensity. The dielectric light interference layer is set after the light absorption layer and the dielectric transition layer to further reduce the light reflection intensity. By reducing the transmittance and reflectance of the glass, the purpose of enhancing the glass shielding effect is achieved.

[0058] The present invention does not limit the type of substrate; it can be a glass substrate or a glass sheet.

[0059] In some embodiments, the first dielectric layer 22 comprises TiOx.

[0060] In some embodiments, the first light-absorbing layer 23 comprises NiCrNx.

[0061] In some embodiments, the second dielectric transition layer 24 includes AZOx.

[0062] In some embodiments, the first dielectric light interference layer 25 comprises SiNx.

[0063] In some embodiments, the second light-absorbing layer 26 comprises Cr.

[0064] In some embodiments, the third dielectric transition layer 27 includes AZOx.

[0065] In some embodiments, the second dielectric light interference layer 28 comprises SiNx.

[0066] In some embodiments, the first dielectric layer 22 is TiOx, the first light-absorbing layer 23 is NiCrNx, the second dielectric transition layer 24 is AZOx, the first dielectric light interference layer 25 is SiNx, the second light-absorbing layer 26 is Cr, the third dielectric transition layer 27 is AZOx, and the second dielectric light interference layer 28 is SiNx. The first light-absorbing layer 23 being NiCrNx and the second light-absorbing layer 26 being Cr provides strong light absorption. Furthermore, NiCrNx exhibits good corrosion resistance, which improves the mechanical strength of the glass.

[0067] In this embodiment, by adjusting the structural combination of various film layers in the coating layer according to the spectral absorption characteristics, spectral interference characteristics can be formed, thereby preparing privacy coated glass with high shielding performance and low reflectivity.

[0068] In some embodiments, the thickness of the first dielectric layer 22 is 40nm to 42nm, and can be any value in the range of 40nm to 42nm, such as 40nm, 41nm, or 42nm.

[0069] In some embodiments, the thickness of the first light-absorbing layer 23 is 9.5 nm to 11 nm, and can be any value in the range of 9.5 nm to 11 nm, such as 9.5 nm, 10 nm, 10.5 nm, 11 nm, etc.

[0070] In some embodiments, the thickness of the second dielectric transition layer 24 is 4nm to 6nm.

[0071] In some embodiments, the thickness of the first dielectric light interference layer 25 is 85nm to 90nm, and can be any value in the range of 85nm to 90nm, such as 85nm, 86nm, 87nm, 88nm, 89nm, 90nm, etc.

[0072] In some embodiments, the thickness of the second light-absorbing layer 26 is 4nm to 5nm, and can be any value in the range of 4nm to 5nm, such as 4nm, 4.2nm, 4.5nm, 4.8nm, 5nm, etc.

[0073] In some embodiments, the thickness of the third dielectric transition layer 27 is 4nm to 6nm, and can be any value in the range of 4nm to 6nm, such as 4nm, 5nm, or 6nm.

[0074] In some embodiments, the thickness of the second dielectric optical interference layer 28 is 18nm to 22nm, and can be any value in the range of 18nm to 22nm, such as 18nm, 19nm, 20nm, 21nm, 22nm, etc.

[0075] This invention adjusts the phase difference of the privacy-coated glass by varying the thickness of the first dielectric layer 22 (40nm-42nm), the first light-absorbing layer 23 (9.5nm-11nm), the second dielectric transition layer 24 (4nm-6nm), the first dielectric light interference layer 25 (85nm-90nm), the second light-absorbing layer 26 (4nm-5nm), the third dielectric transition layer 27 (4nm-6nm), and the second dielectric light interference layer 28 (18nm-22nm). This affects the brightness of the interference fringes, resulting in lower light transmittance and stronger privacy. Furthermore, within the above thickness ranges, the various functional layers of the privacy-coated glass maintain a consistent color when viewed from the side and front, enhancing its aesthetic appeal.

[0076] In some embodiments, the privacy-coated glass further includes a top protective layer, which serves as the outermost layer of the privacy-coated glass and protects it, thereby improving its abrasion resistance.

[0077] In some embodiments, the thickness of the top protective layer is 2nm to 4nm, and can be any value within the range of 2nm to 4nm, such as 2nm, 3nm, or 4nm. A top protective layer within this thickness range is beneficial for strengthening the protection of privacy-coated glass, improving its abrasion resistance, and also...

[0078] In some embodiments, the privacy-coated glass further includes a GeSe layer disposed between the substrate and the first dielectric layer. The GeSe layer on the surface of the glass substrate enhances the glass's oxidation resistance, reduces adhesion on the substrate surface, improves the adhesion of the coating layer, and enhances the adhesion of other film layers, thereby further improving the mechanical properties of the glass.

[0079] In some embodiments, the thickness of the GeSe layer is 2nm to 4nm, and can be any value in the range of 2nm to 4nm, such as 2nm, 3nm, or 4nm.

[0080] The privacy-coated glass of this invention has a color that is basically the same when viewed from the side and the front, which enhances its aesthetic appeal.

[0081] A second aspect of the present invention provides a method for preparing privacy-coated glass as described above, comprising the following steps:

[0082] S10: Sputtering a first dielectric layer 22 onto the surface of a glass substrate;

[0083] S20: Sputter a first light-absorbing layer 23 onto the surface of the first dielectric layer 22;

[0084] S30: Sputter a second dielectric transition layer 24 onto the surface of the first light-absorbing layer 23;

[0085] S40: Sputter a first dielectric light interference layer 25 onto the surface of the second dielectric transition layer 24;

[0086] S50: Sputter a second light-absorbing layer 26 onto the surface of the first dielectric light interference layer 25;

[0087] S60: Sputter a third dielectric transition layer 27 onto the surface of the second light-absorbing layer 26;

[0088] S70: Sputter a second dielectric light interference layer 28 onto the surface of the third dielectric transition layer 27.

[0089] In some embodiments, titanium metal is used as the target material to prepare the first dielectric layer 22, thereby obtaining the TiOx first dielectric layer 22.

[0090] In some embodiments, the first dielectric layer 22 is prepared under oxygen and argon conditions, utilizing the reaction between oxygen and metallic titanium during sputtering to generate TiOx, while argon can stabilize the reaction environment.

[0091] In some embodiments, a rotating cathode can be used to sputter and deposit titanium metal as a target material under the control of an intermediate frequency power supply in oxygen conditions.

[0092] In some embodiments, the oxygen intake flow rate is 800 sccm.

[0093] In some embodiments, the argon gas inlet flow rate is 600 sccm.

[0094] In some embodiments, the total sputtering power for preparing the first dielectric layer 22 ranges from 250 kW to 300 kW.

[0095] In some implementations, the sputtering pressure is (3–6.5) × 10⁻⁶. -3 mbar.

[0096] In one embodiment, a first light-absorbing layer 23 is prepared using NiCr as the target material, thereby obtaining a NiCrNx first light-absorbing layer 23.

[0097] In some embodiments, the first light-absorbing layer 23 is prepared under nitrogen and argon conditions, utilizing the reaction between nitrogen and NiCr during sputtering to generate NiCrNx, while argon can stabilize the reaction environment.

[0098] In some embodiments, the nitrogen inlet flow rate is 400 sccm.

[0099] In some embodiments, the argon gas inlet flow rate is 1200 sccm.

[0100] In some embodiments, a planar cathode can be used to sputter and deposit NiCr as a target material under the control of a DC power supply, under nitrogen and argon conditions.

[0101] In some embodiments, the total power of the first light-absorbing layer 23 is in the range of 8 kW to 12 kW.

[0102] In some embodiments, the sputtering pressure is (3-5)×10⁻⁶. -3 mbar.

[0103] In some embodiments, a second dielectric transition layer 24 is prepared using ceramic zinc oxide as a target material, thereby obtaining the AZOx second dielectric transition layer 24.

[0104] In some embodiments, the second dielectric transition layer 24 is prepared under argon and oxygen conditions. Oxygen can react with the target ceramic zinc oxide during sputtering to generate AZOx, while argon can stabilize the reaction environment.

[0105] In some embodiments, the oxygen intake flow rate is 100 sccm.

[0106] In some embodiments, the argon gas inlet flow rate is 1400 sccm.

[0107] In some embodiments, a rotating cathode can be used to sputter and deposit ceramic zinc oxide as a target material under the control of an intermediate frequency power supply in the presence of oxygen and argon.

[0108] In some embodiments, the total power required to prepare the second dielectric transition layer 24 is 250 kW to 300 kW.

[0109] In some embodiments, the sputtering pressure is (2.5–6) × 10⁻⁶. -3 mbar.

[0110] In some embodiments, the first dielectric light interference layer 25 is prepared using aluminum silicon as a target material, thereby obtaining the SiNx first dielectric light interference layer 25.

[0111] In some embodiments, the first dielectric light interference layer 25 is prepared under nitrogen and argon conditions. Nitrogen can react with the target material aluminum silicon to generate the SiNx first dielectric light interference layer 25, while argon can stabilize the reaction environment.

[0112] In some embodiments, the nitrogen inlet flow rate is 900 sccm.

[0113] In some embodiments, the argon gas inlet flow rate is 700 sccm.

[0114] In some embodiments, a rotating cathode can be used to sputter and deposit aluminum-silicon as a target material under the control of an intermediate frequency power supply, with nitrogen and argon atmospheres.

[0115] In some embodiments, the total power of sputtering to prepare the first dielectric optical interference layer 25 is 250 kW to 300 kW.

[0116] In some embodiments, the sputtering pressure is (2.5–8.5) × 10⁻⁶. -3 mbar.

[0117] In some embodiments, the second light-absorbing layer 26 is prepared using metallic chromium as a target material, thereby obtaining a Cr second light-absorbing layer 26.

[0118] In some embodiments, the second light-absorbing layer 26 is prepared under argon conditions, where argon can stabilize the deposition environment and reduce the generation of impurities.

[0119] In some embodiments, the argon gas inlet flow rate is 1400 sccm.

[0120] In some embodiments, a rotating cathode can be used to sputter and deposit metallic chromium as a target under the control of a DC power supply under argon conditions.

[0121] In some embodiments, the power of sputtering to prepare the second light-absorbing layer 26 is 5 kW to 6 kW.

[0122] In some embodiments, the sputtering pressure is (2.5~5)×10 -3 mbar.

[0123] In some embodiments, the third dielectric transition layer 27 is prepared using ceramic zinc oxide as a target material, thereby obtaining the AZO third dielectric transition layer 27.

[0124] In some embodiments, the third dielectric transition layer 27 is prepared under argon and oxygen conditions. Oxygen can react with ceramic zinc oxide during sputtering to generate the AZO third dielectric transition layer 27, while argon can stabilize the deposition environment and reduce the generation of impurities.

[0125] In some embodiments, the oxygen intake flow rate is 100 sccm.

[0126] In some embodiments, the argon gas inlet flow rate is 1400 sccm.

[0127] In some embodiments, a rotating cathode can be used to sputter and deposit AZO as a target material under the control of an intermediate frequency power supply in the presence of argon and nitrogen.

[0128] In some embodiments, the power for sputtering to prepare the third dielectric transition layer 27 is 10 kW to 20 kW.

[0129] In some embodiments, the sputtering pressure is (2.5~5)×10 -3 mbar.

[0130] In some embodiments, the second dielectric light interference layer 28 is prepared using silicon-aluminum as a target material, thereby obtaining the SiNx second dielectric light interference layer 28.

[0131] In some embodiments, the second dielectric light interference layer 28 is prepared under nitrogen and argon conditions. Nitrogen can react with silicon and aluminum during sputtering to generate SiNx, while argon can stabilize the deposition environment and reduce the generation of impurities.

[0132] In some embodiments, the nitrogen inlet flow rate is 700 sccm.

[0133] In some embodiments, the argon gas inlet flow rate is 900 sccm.

[0134] In some embodiments, a rotating cathode can be used to sputter and deposit silicon-aluminum as a target material under the control of an intermediate frequency power supply under nitrogen and argon conditions.

[0135] In some embodiments, the power of sputtering to prepare the second dielectric optical interference layer 28 is 150 kW to 200 kW.

[0136] In some embodiments, the sputtering pressure is (2.5–5.5) × 10⁻⁶. -3 mbar.

[0137] In some embodiments, reference Figure 2 Furthermore, a top protective layer 28 is sputtered onto the surface of the second dielectric light interference layer 28.

[0138] In some embodiments, a top protective layer 28 is prepared using zirconium metal as a target material, thereby obtaining a ZrNOx top protective layer.

[0139] In some embodiments, the top protective layer 28 is prepared under conditions of argon, oxygen, and nitrogen, where oxygen can react with metallic zirconium to generate ZrNOx.

[0140] In some embodiments, the oxygen intake flow rate is 900 sccm.

[0141] In some embodiments, the argon gas inlet flow rate is 600 sccm.

[0142] In some embodiments, a rotating cathode can be used to sputter and deposit zirconium metal as a target material under the control of an intermediate frequency power supply in the presence of oxygen, argon, and nitrogen.

[0143] In some embodiments, the power of sputtering to prepare the top protective layer is 60 kW.

[0144] In some embodiments, the sputtering pressure is (2.5–6.5) × 10⁻⁶. -3 mbar.

[0145] In some embodiments, continue to refer to Figure 2 After preparing a GeSe layer 21 on the surface of the substrate, a first dielectric layer 22 is then prepared.

[0146] In some embodiments, pulsed laser deposition can be used, in which a high-energy laser pulse bombards a GeSe target to generate a high-temperature, high-pressure plasma on the surface of the GeSe target, thereby depositing a GeSe layer 21 on the surface of the glass substrate.

[0147] In some embodiments, the laser wavelength range is 1060nm to 1065nm.

[0148] In some embodiments, the laser energy density ranges from 10 J / cm². 2 ~50J / cm 2 .

[0149] The technical solution of the present invention will be further described in detail below with reference to specific embodiments. It should be understood that the following specific embodiments are only used to explain the present invention and are not intended to limit the present invention.

[0150] Example 1

[0151] On a 6mm white glass substrate, films are sputtered and deposited in the following order.

[0152] (I) First Dielectric Layer

[0153] Number of targets: 3 mid-frequency AC rotating cathodes; target configuration: titanium (Ti) targets. Process gas ratios are as follows: argon to oxygen flow rate ratio (Ar / O2 = 600 sccm / 800 sccm), sputtering pressure: (3–6.5) × 10⁻⁶. -3 The TiOx first dielectric layer with a thickness of 41 nm was deposited by sputtering under an oxygen atmosphere at a medium frequency power supply with a total power of 250 kW to 300 kW.

[0154] (II) First light absorption layer

[0155] Number of targets: 1 planar cathode; target configuration: nickel-chromium target (NiCr). Process gas ratios are as follows: argon to nitrogen flow rate ratio (Ar / N2 = 1200 sccm / 400 sccm), sputtering pressure is (3~5) × 10⁻⁶. -3The NiCrNx first light-absorbing layer with a thickness of 10.3 nm was deposited by sputtering under a nitrogen atmosphere at a DC power supply of 8 kW to 12 kW.

[0156] (III) Second dielectric transition layer

[0157] Target quantity: 1 AC rotating target; target configuration: ceramic zinc oxide target (AZO); process gas ratio as follows: argon to oxygen flow rate ratio (Ar / O2 = 1400 sccm / 100 sccm); sputtering pressure: 2.5~6×10⁻⁶. -3 mbar; a second dielectric transition layer of AZOx with a coating thickness of 5.2 nm was obtained by deposition.

[0158] (iv) First dielectric light interference layer

[0159] Number of targets: 4-5 AC rotating targets; target configuration: silicon-aluminum (SiAl); process gas ratio: argon to nitrogen flow rate ratio (Ar / N2 = 700 sccm / 900 sccm); sputtering pressure: 2.5-8.5 × 10⁻⁶. -3 mbar yielded a SiNx second dielectric layer with a coating thickness of 89.1 nm.

[0160] (V) Second light absorption layer

[0161] Target quantity: 1 DC planar target; target configuration: metallic chromium (Cr); process gas ratio: argon (Ar = 1400 sccm); sputtering pressure: (2.5–5) × 10⁻⁶. -3 mbar yielded a Cr second barrier protective layer with a coating thickness of 4.8 nm.

[0162] (vi) Third dielectric transition layer

[0163] Target quantity: 1 AC rotating target; target configuration: ceramic zinc oxide target (AZO); process gas ratio as follows: argon to oxygen flow rate ratio (Ar / O2 = 1400 sccm / 100 sccm); sputtering pressure: (2.5~5)×10⁻⁶. -3 mbar was used to obtain an AZOx third dielectric transition layer with a coating thickness of 5 nm.

[0164] (vii) Second dielectric light interference layer

[0165] Number of targets: 3-4 AC rotating targets; target configuration is silicon-aluminum (SiAl); process gas ratio is as follows: argon and nitrogen flow rate ratio (Ar / N2 = 700 sccm / 900 sccm); sputtering pressure is (2.5-5.5) × 10⁻⁶. -3mbar was used to obtain a SiNx third dielectric layer with a coating thickness of 22 nm.

[0166] (viii) Top protective layer

[0167] Target quantity: 1 AC rotating target; target configuration: zirconium metal target (Zr); process gas ratio as follows: argon and oxygen flow rate ratio (Ar / O2 = 600 sccm / 900 sccm + N2 = 50 sccm); sputtering pressure: (2.5~6.5)×10⁻⁶. - 3 mbar was used for sputtering deposition in an oxygen atmosphere at a power of 60 kW to obtain a ZrNOx top protective layer with a thickness of 3 nm.

[0168] The privacy-coated glass prepared in this embodiment has a total film thickness controlled between 170 and 190 nm, and the sputtering chamber drive speed is controlled between 3.5 and 4 m / min.

[0169] Examples 2 to 5

[0170] Privacy coated glass was prepared in Examples 2 to 5 using the same preparation method as in Example 1, but with the following differences: the thickness of the first dielectric layer in Example 2 was 40 nm; the thickness of the second dielectric transition layer in Example 3 was 6 nm; the thickness of the third dielectric transition layer in Example 4 was 6 nm; and the thickness of the second dielectric light interference layer in Example 5 was 20 nm.

[0171] Example 6

[0172] Example 6 describes the preparation of privacy-coated glass using the same method as Example 1. However, in Example 6, before preparing the first dielectric layer, a 3 nm thick GeSe layer is prepared on the surface of the glass substrate using pulsed laser deposition, with GeSe as the target material. The first dielectric layer is then prepared on the surface of the GeSe layer. The laser wavelength range is 1060 nm to 1065 nm, and the laser energy density range is 10 J / cm². 2 ~50J / cm 2 .

[0173] Performance testing

[0174] 1. The color value of the privacy-coated glass in the example was measured, and the test results are shown in Table 1;

[0175] 2. Determine the reflectivity and drop height of the privacy-coated glass.

[0176] Table 1

[0177]

[0178] As shown in Table 1, the privacy-coated glass obtained in Examples 1 to 6 has a transmittance of approximately 33%, a dark transmitted color, low reflectivity, excellent privacy shielding effect, and a dark gray reflected color. The privacy-coated glass appears dark gray when viewed outdoors, and the color is basically the same when viewed from the side and front. Example 6 prepared a GeSe layer on the surface of the glass substrate, which reduced adhesion on the substrate surface, improved the adhesion of the coating layer, and enhanced the adhesion of other coating layers. This allowed for better utilization of the interference effect of other coating layers on light, resulting in a decrease in both transmittance and reflectivity of the obtained privacy-coated glass. Furthermore, the adhesion of the coating layers was strengthened, further improving the mechanical properties of the privacy-coated glass, and increasing the drop height of the glass from 160cm to 170cm.

[0179] The above are merely preferred embodiments of the present invention and do not limit the scope of the patent. Any equivalent structural or procedural transformations made based on the description and drawings of the present invention, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of the present invention.

Claims

1. A privacy-coated glass, characterized in that, The privacy-coated glass comprises, from bottom to top, a substrate and a coating layer, and the coating layer comprises, from bottom to top, a first dielectric layer, a first light-absorbing layer, a second dielectric transition layer, a first dielectric light interference layer, a second light-absorbing layer, a third dielectric transition layer, and a second dielectric light interference layer. The first dielectric layer includes TiOx, The first light-absorbing layer comprises NiCrNx, The second dielectric transition layer includes AZOx, The first dielectric light interference layer includes SiNx, The second light-absorbing layer includes Cr, The third dielectric transition layer includes AZOx. The second dielectric optical interference layer includes SiNx, The thickness of the first dielectric layer is 40nm~42nm. The thickness of the first light-absorbing layer is 9.5 nm to 11 nm. The thickness of the second dielectric transition layer is 4nm~6nm. The thickness of the first dielectric optical interference layer is 85nm~90nm. The thickness of the second light-absorbing layer is 4nm~5nm. The thickness of the third dielectric transition layer is 4nm to 6nm. The thickness of the second dielectric light interference layer is 18nm~22nm.

2. The privacy-coated glass according to claim 1, characterized in that, The privacy-coated glass further includes a top protective layer disposed on the upper surface of the second dielectric light interference layer; and / or, the privacy-coated glass further includes a GeSe layer disposed between the substrate and the first dielectric layer.

3. The privacy-coated glass according to claim 2, characterized in that, The privacy-coated glass also includes a top protective layer, the thickness of which is 2nm~4nm; And / or, the privacy-coated glass further includes a GeSe layer with a thickness of 2nm to 4nm.

4. A method for preparing the privacy-coated glass according to any one of claims 1 to 3, characterized in that, Includes the following steps: A first dielectric layer is sputtered onto the surface of a glass substrate; A first light-absorbing layer is sputtered onto the surface of the first dielectric layer; A second dielectric transition layer is sputtered onto the surface of the first light-absorbing layer; A first dielectric light interference layer is sputtered onto the surface of the second dielectric transition layer; A second light-absorbing layer is sputtered onto the surface of the first dielectric light interference layer; A third dielectric transition layer is sputtered onto the surface of the second light-absorbing layer; A second dielectric light interference layer is sputtered onto the surface of the third dielectric transition layer.

5. The method for preparing privacy-coated glass according to claim 4, characterized in that, In the step of preparing the first dielectric layer, titanium metal is used as the target material; In the step of preparing the first light-absorbing layer, nickel-chromium is used as the target material; In the step of preparing the second dielectric transition layer, ceramic zinc oxide is used as the target material; In the step of preparing the first dielectric optical interference layer, silicon aluminum is used as the target material; In the step of preparing the second light-absorbing layer, Cr is used as the target material; In the step of preparing the third dielectric transition layer, ceramic zinc oxide is used as the target material; In the step of preparing the second dielectric light interference layer, silicon aluminum is used as the target material.

6. The method for preparing privacy-coated glass according to claim 4, characterized in that, The first dielectric layer was prepared under oxygen conditions; And / or, the first light-absorbing layer is prepared under nitrogen and argon conditions; And / or, the second medium transition layer is prepared under argon and oxygen conditions; And / or, prepare the first dielectric light interference layer under nitrogen and argon conditions; And / or, prepare a second light-absorbing layer under argon and oxygen conditions; And / or, prepare a third medium transition layer under argon and oxygen conditions; And / or, prepare a second dielectric light interference layer under nitrogen and argon conditions.

7. The method for preparing privacy-coated glass according to any one of claims 4 to 6, characterized in that, A top protective layer is also sputtered onto the surface of the second dielectric optical interference layer; And / or, prepare a GeSe layer on the surface of the glass substrate, and then sputter the first dielectric layer on the surface of the GeSe layer.

8. The method for preparing privacy-coated glass according to claim 7, characterized in that, A top protective layer is sputtered onto the surface of the second dielectric optical interference layer, and zirconium metal is used as the target material in the step of preparing the top protective layer.

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