A back contact cell capable of resisting ultraviolet attenuation, a manufacturing method thereof, and a photovoltaic module

Abstract

The invention belongs to the technical field of back contact cells, and specifically relates to a back contact cell capable of resisting ultraviolet attenuation, a manufacturing method thereof, and a photovoltaic module, comprising an anti-ultraviolet transmission and anti-reflection layer arranged on the outer surface of an anti-reflection layer, the anti-ultraviolet transmission and anti-reflection layer containing nano-scale yttrium vanadate doped with europium and dysprosium powder, the refractive index of the anti-ultraviolet transmission and anti-reflection layer being 1.20-1.45, the thickness of the anti-ultraviolet transmission and anti-reflection layer being 5-15 μm, the thickness ratio of the anti-ultraviolet transmission and anti-reflection layer to the thickness of the anti-reflection layer being (38-140):1, and the thickness ratio of the anti-ultraviolet transmission and anti-reflection layer to the thickness of the first doped polysilicon layer being (55-250):1. The invention can convert ultraviolet rays into fluorescent scattering of other light rays, reduce ultraviolet damage, and avoid sacrificing other light energy losses; at the same time, reduce optical absorption in the long-wave band, increase current density, and at the same time play an anti-reflection role, which is conducive to ensuring optical effects and passivation effects, and improving battery conversion efficiency.

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