Micro LED panel with photonic crystal structure and manufacturing method thereof

Abstract

The present disclosure provides a micro-LED panel with a micro-LED array and a system and method for manufacturing the micro-LED panel. The micro-LED array includes at least one micro-LED structure. The micro-LED structure includes at least: a mesa structure and an array of photonic crystal structures. The array of photonic crystal structures is formed through the mesa structure from top to bottom, thereby achieving higher directional light emission, simpler structure and lower cost.

Description

Technical Field

[0001] This disclosure generally relates to light-emitting diode (LED) technology, and more specifically to a micro LED panel and a method of manufacturing the micro LED structure. Background Technology

[0002] Display technology is becoming increasingly important in today's commercial electronic devices. These display panels are widely used in fixed large screens, such as LCD TVs and OLED TVs, as well as portable electronic devices, such as laptops, smartphones, tablets, and wearable devices.

[0003] Inorganic micro-light-emitting diodes (LEDs) are becoming increasingly important due to their applications in a variety of fields, including self-emitting microdisplays, visible light communication, and optogenetics. Micro-LEDs exhibit higher output performance than conventional LEDs due to better strain relaxation, improved light extraction efficiency, and uniform current spread. Compared to conventional LEDs, micro-LEDs also exhibit improved thermal performance and operate with higher current density, faster response rates, wider operating temperature ranges, higher resolution, color gamut, contrast ratio, and lower power consumption.

[0004] To achieve higher pixel density, the size of micro-LEDs has been reduced to less than 200 nm. However, the efficiency and carrier lifetime of devices based on micro-LED arrays decrease dramatically with decreasing micro-LED size due to poor p-type conduction and surface recombination caused by top-down etching. The performance of micro-LEDs is also severely affected by the quantum-confined Stark effect, particularly by strain-induced polarization fields, leading to unstable operation and significant changes in emission wavelength with increasing current. Furthermore, as the diameter of micro-LEDs decreases, numerous surface states and defects are formed on the surface of the micro-LED structure via inductively coupled plasma (ICP) etching, increasing nonradiative recombination at the micro-LED structure surface.

[0005] Furthermore, the emission of conventional micro-LED structures is mainly distributed in any direction, exhibiting poor directional emission and reducing light intensity along the vertical direction. To achieve directional emission in micro-LED structures, additional reflective structures are configured around the mesa and at the bottom of the mesa to reflect the emitted light in the same direction. This leads to complex manufacturing processes and increases the cost of micro-LEDs.

[0006] Furthermore, in devices based on micro-LED arrays, a single micro-LED typically functions as a pixel, such as in a monolithic micro-LED array panel. However, micro-LED structures with smaller diameters exhibit lower external quantum efficiency (EQE), which reduces the luminous efficiency per pixel.

[0007] The above content is only for the purpose of helping to understand the technical solution of this application and does not constitute an admission that the above is prior art. Summary of the Invention

[0008] There is a need for improved display designs that address and mitigate the shortcomings of conventional display systems, such as those mentioned above. In particular, there is a need for display panels with improved efficiency and better image quality.

[0009] To overcome the above-mentioned drawbacks, the present invention provides a micro LED panel to improve luminous efficiency, avoid crosstalk, minimize surface carrier loss, and optimize the sidewall area of ​​the quantum well.

[0010] To achieve the above objectives, some exemplary embodiments of this disclosure provide a microLED panel including a microLED array, wherein the microLED array includes: At least one microLED structure, wherein the microLED structure comprises at least: A mesa structure, wherein the mesa structure, from bottom to top, includes: a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer; and, A photonic crystal structure array comprising multiple photonic crystal structures formed from top to bottom through a mesa structure, wherein gaps exist between adjacent photonic crystal structures.

[0011] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top of the photonic crystal structure is the top of the mesa structure, and the bottom of the photonic crystal structure is the bottom of the mesa structure.

[0012] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the photonic crystal structure is a one-dimensional nanostructure.

[0013] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, multiple one-dimensional nanostructures are distributed in a photonic crystal structure array.

[0014] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a one-dimensional nanostructure is formed in the mesa structure along the light-emitting direction of the mesa structure.

[0015] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0016] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a one-dimensional nanostructure is formed perpendicular to the light-emitting layer.

[0017] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is filled in the gap between adjacent photonic crystal structures.

[0018] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is also formed on the sidewall of the mesa structure.

[0019] In some exemplary embodiments or any combination of exemplary embodiments of the micro-LED panel, the dielectric layer fills the space between adjacent micro-LED structures.

[0020] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the dielectric layer is transparent and electrically insulating.

[0021] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the width of the platform structure is no greater than 3 μm.

[0022] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes a plurality of stacked quantum well pairs.

[0023] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer is in the shape of a straight line without any curvature.

[0024] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first semiconductor layer is single crystal, and the material of the second semiconductor layer is single crystal.

[0025] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a top contact is formed on the top of the mesa structure and electrically connected to the top of the mesa structure, and a top conductive layer is formed on the top contact and on the top of the mesa structure.

[0026] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top conductive layer is transparent.

[0027] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising the following steps: Step 1, providing a semiconductor substrate with an epitaxial structure; the epitaxial structure includes, from top to bottom: a first type epitaxial layer, a light-emitting layer, and a second type epitaxial layer; Step 2: A bottom contact layer and a bottom connection layer are sequentially formed on the top surface of the first type of epitaxial layer; Step 3: By inverting the semiconductor substrate, the bottom interconnect layer is bonded to the IC backplane; then, the semiconductor substrate is removed. Step 4: Form a photonic crystal structure array comprising multiple photonic crystal structures by etching the epitaxial structure; Step 5: A space is formed by etching the photonic crystal structure array, the bottom contact layer, and the bottom connection layer from top to bottom to define the mesa structure; Step 6: Form a dielectric layer on the sidewalls of each photonic crystal structure; and Step 7: Form top contacts and a top conductive layer on top of the dielectric layer and on top of the mesa structure.

[0028] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, a dielectric layer is further formed on the sidewall of the mesa structure.

[0029] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 7, a top conductive layer is formed in the space between adjacent mesa structures.

[0030] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the dielectric layer further fills the space between adjacent mesa structures.

[0031] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 7, a top conductive layer is formed on top of the dielectric layer.

[0032] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, the top of the photonic crystal structure is the top of the mesa structure, and the bottom of the photonic crystal structure is the bottom of the mesa structure.

[0033] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, the photonic crystal structure is a one-dimensional nanostructure.

[0034] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed along the light-emitting direction of the mesa structure.

[0035] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed perpendicular to the light-emitting layer.

[0036] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0037] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 5, the width of the mesa structure is no greater than 3 μm.

[0038] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, the width of the platform structure is no greater than 3 μm.

[0039] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 1, the material of the first epitaxial layer is a single crystal, and the material of the second epitaxial layer is a single crystal.

[0040] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 7, a top contact is first formed on top of the photonic crystal structure array and electrically connected to at least one of the photonic crystal structures; then, a top conductive layer is formed on the top contact and on top of the mesa structure.

[0041] Some exemplary embodiments of this disclosure provide a microLED panel including a microLED array, the microLED array comprising: At least one microLED structure, wherein the microLED structure comprises at least: A mesa structure, wherein the mesa structure comprises, from bottom to top: a first type of semiconductor layer, a light-emitting layer, and a second type of semiconductor layer; A photonic crystal structure array, comprising multiple photonic crystal structures formed from top to bottom through a mesa structure, wherein gaps exist between adjacent photonic crystal structures; and... A regenerated layer is formed on at least a portion of the sidewall of the platform structure.

[0042] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top of the photonic crystal structure is the top of the mesa structure, and the bottom of the photonic crystal structure is the bottom of the mesa structure.

[0043] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the photonic crystal structure is a one-dimensional nanostructure.

[0044] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, multiple one-dimensional nanostructures are distributed in a photonic crystal structure array.

[0045] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a one-dimensional nanostructure is formed in the mesa structure along the light-emitting direction of the mesa structure.

[0046] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0047] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a one-dimensional nanostructure is formed perpendicular to the light-emitting layer.

[0048] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is filled in the gap between adjacent photonic crystal structures.

[0049] In some exemplary embodiments or any combination of exemplary embodiments of the micro-LED panel, a dielectric layer fills the space between adjacent micro-LED structures.

[0050] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the dielectric layer is transparent and electrically insulating.

[0051] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the width of the platform structure is no greater than 3 μm.

[0052] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes a plurality of stacked quantum well pairs.

[0053] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer has a straight shape without any curvature.

[0054] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first semiconductor layer is single crystal, and the material of the second semiconductor layer is single crystal.

[0055] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a regenerated layer is formed on at least a portion of the sidewall of the light-emitting layer.

[0056] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is formed on the entire sidewall of the light-emitting layer.

[0057] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a regenerated layer is formed on at least a portion of the sidewall of the first type epitaxial layer, the entire sidewall of the light-emitting layer, and at least a portion of the sidewall of the first type epitaxial layer.

[0058] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is also formed on the sidewall of the photonic crystal structure.

[0059] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer fills the gaps between adjacent photonic crystal structures.

[0060] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer fills the gap between adjacent mesa structures.

[0061] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer with intrinsically doped ions is the same as the material of the first type semiconductor layer and / or the material of the second type semiconductor layer, but without intentionally doped ions.

[0062] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

[0063] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is a single crystal.

[0064] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regenerated layer is larger than the band gap of the light-emitting layer.

[0065] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is less than the thickness of the light-emitting layer.

[0066] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is no greater than 100 nm.

[0067] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regenerated layer is higher than the resistance of the light-emitting layer.

[0068] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is non-conductive.

[0069] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a top contact is formed on the top of the mezzanine structure and electrically connected to the top of the mezzanine structure, and a top conductive layer is formed on the top contact and the top of the mezzanine structure.

[0070] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top conductive layer is transparent.

[0071] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising the following steps: Step 1: Provide a semiconductor substrate with an epitaxial structure; Step 2: Form a photonic crystal structure array comprising multiple photonic crystal structures in the epitaxial structure by etching the epitaxial structure; Step 3: Create space by etching the photonic crystal structure to define the mesa structure; Step 4: Form a regenerated layer on the sidewall of the photonic crystal structure; Step 5: Form bottom contacts on top of the photonic crystal structure array; Step 6: Form a dielectric layer on top of the photonic crystal structure array and on top of the regenerated layer, and make the dielectric layer cover the bottom contacts; Step 7: Form a bottom connection structure on the top of the bottom contact; Step 8: By inverting the semiconductor substrate, the bottom connection structure is bonded to the IC backplane; then, the semiconductor substrate is removed; and Step 9: Form top contacts and a top conductive layer on top of the dielectric layer and on top of the mesa structure.

[0072] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, the dielectric layer further fills the space between adjacent mesa structures.

[0073] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 2, the photonic crystal structure is a one-dimensional nanostructure.

[0074] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed in the mesa structure along the light-emitting direction of the mesa structure.

[0075] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed perpendicular to the light-emitting layer.

[0076] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0077] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 1, the width of the mesa structure is no greater than 3 μm.

[0078] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, the material of the regenerated layer having intrinsically doped ions is the same as the material of the first type semiconductor layer and / or the material of the second type semiconductor layer, but without intentionally doped ions.

[0079] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the material of the regrowth layer is a single crystal.

[0080] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

[0081] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the band gap of the regenerated layer is greater than that of the light-emitting layer; the thickness of the regenerated layer is less than that of the light-emitting layer; and the resistance of the regenerated layer is higher than that of the light-emitting layer.

[0082] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising the following steps: Step 1: Provide a semiconductor substrate with an epitaxial structure; Step 2: Form a photonic crystal structure array comprising multiple photonic crystal structures in the epitaxial structure by etching the epitaxial structure; Step 3: Create space by etching the photonic crystal structure to define the mesa structure; Step 4: Form a regenerated layer on the sidewall of the photonic crystal structure and fill the space between adjacent mesa structures with the regenerated layer; Step 5: Form a top contact on top of the photonic crystal structure array; Step 6: Form a dielectric layer on the top of the mesa structure, the top of the bottom contacts, and the top of the regenerated layer; Step 7: Form a bottom connection structure on the top of the bottom contact; Step 8: By inverting the semiconductor substrate, the bottom connection structure is bonded to the IC backplane; then, the semiconductor substrate is removed; and Step 9: Form top contacts and a top conductive layer on top of the dielectric layer and on top of the mesa structure.

[0083] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 2, the photonic crystal structure is a one-dimensional nanostructure.

[0084] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed in the mesa structure along the light-emitting direction of the mesa structure.

[0085] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed perpendicular to the light-emitting layer.

[0086] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0087] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 1, the width of the mesa structure is no greater than 3 μm.

[0088] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, the material of the regenerated layer having intrinsically doped ions is the same as the material of the first type semiconductor layer and / or the material of the second type semiconductor layer, but without intentionally doped ions.

[0089] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the material of the regrowth layer is a single crystal.

[0090] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

[0091] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the band gap of the regenerated layer is larger than the band gap of the light-emitting layer.

[0092] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the thickness of the regenerated layer is less than the thickness of the light-emitting layer.

[0093] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the resistance of the regenerated layer is higher than the resistance of the light-emitting layer.

[0094] Some exemplary embodiments of this disclosure provide a microLED panel including a microLED array, the microLED array comprising: At least one microLED structure, wherein the microLED structure comprises at least: A mesa structure, wherein the mesa structure, from bottom to top, includes: a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer; and, A photonic crystal structure array comprises multiple photonic crystal structures formed from top to bottom through a mesa structure, wherein gaps exist between adjacent photonic crystal structures. The photonic crystal structure array includes a central photonic crystal structure and other photonic crystal structures formed around the central photonic crystal structure.

[0095] In some exemplary embodiments or any combination of exemplary embodiments of the micro-LED panel, the micro-LED structure further includes a top contact formed on top of the central photonic crystal structure.

[0096] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top of the photonic crystal structure is the top of the mesa structure, and the bottom of the photonic crystal structure is the bottom of the mesa structure.

[0097] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the photonic crystal structure is a one-dimensional nanostructure.

[0098] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, multiple one-dimensional nanostructures are distributed in a photonic crystal structure array.

[0099] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a one-dimensional nanostructure is formed in the mesa structure along the light-emitting direction of the mesa structure.

[0100] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0101] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a one-dimensional nanostructure is formed perpendicular to the light-emitting layer.

[0102] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is filled in the gap between adjacent photonic crystal structures.

[0103] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is also formed on the sidewall of the mesa structure.

[0104] In some exemplary embodiments or any combination of exemplary embodiments of the micro-LED panel, the dielectric layer fills the space between adjacent micro-LED structures.

[0105] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the dielectric layer is transparent and electrically insulating.

[0106] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the width of the platform structure is no greater than 3 μm.

[0107] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes a plurality of stacked quantum well pairs.

[0108] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer is in the shape of a straight line without any curvature.

[0109] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first semiconductor layer is single crystal, and the material of the second semiconductor layer is single crystal.

[0110] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a top conductive layer is formed on the top contact and on the top of the platform structure.

[0111] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top conductive layer is transparent.

[0112] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising the following steps: Step 1, providing a semiconductor substrate with an epitaxial structure; wherein the epitaxial structure includes, from top to bottom: a first type epitaxial layer, a light-emitting layer, and a second type epitaxial layer; Step 2: A bottom contact layer and a bottom connection layer are sequentially formed on the top surface of the first type of epitaxial layer; Step 3: By inverting the semiconductor substrate, the bottom interconnect layer is bonded to the IC backplane; then, the semiconductor substrate is removed. Step 4: Form a top contact on top of the second type of epitaxial layer; Step 5: Form a mesa structure in the epitaxial structure by etching the epitaxial structure, bottom contact layer and bottom connection layer from top to bottom; and form a photonic crystal structure array including multiple photonic crystal structures by etching the epitaxial structure. Step 6: Form a dielectric layer on the sidewalls of each photonic crystal structure; and Step 7: Form a top conductive layer on the surface of the dielectric layer and on top of the mesa structure.

[0113] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, a dielectric layer is further filled in the space between adjacent mesa structures.

[0114] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 7, a top conductive layer is formed in the space between adjacent mesa structures.

[0115] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, the dielectric layer fills the space between adjacent mesa structures, and a top conductive layer is formed on top of the dielectric layer.

[0116] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 5, the photonic crystal structure is a one-dimensional nanostructure, and the one-dimensional nanostructure is formed in the mesa structure along the light emission direction of the mesa structure.

[0117] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed perpendicular to the light-emitting layer.

[0118] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0119] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 5, the width of the mesa structure is no greater than 3 μm.

[0120] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 1, the material of the first epitaxial layer is a single crystal, and the material of the second epitaxial layer is a single crystal.

[0121] Some exemplary embodiments of this disclosure provide a microLED panel including a microLED array, the microLED array comprising: At least one microLED structure, wherein the microLED structure comprises at least: A mesa structure, wherein the mesa structure, from bottom to top, includes: a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer; and, A photonic crystal structure array, comprising multiple photonic crystal structures formed from top to bottom through a mesa structure, wherein gaps exist between adjacent photonic crystal structures, and wherein the photonic crystal structure array includes a central photonic crystal structure and other photonic crystal structures formed around the central photonic crystal structure; and A regenerated layer is formed on at least a portion of the sidewall of the platform structure.

[0122] In some exemplary embodiments or any combination of exemplary embodiments of the micro-LED panel, the micro-LED structure further includes a top contact formed on top of the central photonic crystal structure.

[0123] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top of the photonic crystal structure is the top of the mesa structure, and the bottom of the photonic crystal structure is the bottom of the mesa structure.

[0124] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the photonic crystal structure is a one-dimensional nanostructure.

[0125] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, multiple one-dimensional nanostructures are distributed in a photonic crystal structure array.

[0126] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a one-dimensional nanostructure is formed in the mesa structure along the light-emitting direction of the mesa structure.

[0127] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0128] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a one-dimensional nanostructure is formed perpendicular to the light-emitting layer.

[0129] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is filled in the gap between adjacent photonic crystal structures.

[0130] In some exemplary embodiments or any combination of exemplary embodiments of the micro-LED panel, the dielectric layer also fills the space between adjacent micro-LED structures.

[0131] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the dielectric layer is transparent and electrically insulating.

[0132] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the width of the platform structure is no greater than 3 μm.

[0133] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes a plurality of stacked quantum well pairs.

[0134] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer is in the shape of a straight line without any curvature.

[0135] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first semiconductor layer is single crystal, and the material of the second semiconductor layer is single crystal.

[0136] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a regenerated layer is formed on at least a portion of the sidewall of the light-emitting layer.

[0137] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is formed on the entire sidewall of the light-emitting layer.

[0138] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is formed on at least a portion of the sidewall of the first type epitaxial layer, on the entire sidewall of the light-emitting layer, and on at least a portion of the sidewall of the first type epitaxial layer.

[0139] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is also formed on the sidewall of the photonic crystal structure.

[0140] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer fills the gaps between adjacent photonic crystal structures.

[0141] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer with intrinsically doped ions is the same as the material of the first type semiconductor layer and / or the material of the second type semiconductor layer, but without intentionally doped ions.

[0142] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

[0143] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is a single crystal.

[0144] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regenerated layer is larger than the band gap of the light-emitting layer.

[0145] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is less than the thickness of the light-emitting layer.

[0146] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is no greater than 100 nm.

[0147] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regenerated layer is higher than that of the light-emitting layer.

[0148] In some exemplary embodiments or any combination of exemplary embodiments of the micro-LED panel, the regenerated layer is non-conductive.

[0149] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a top conductive layer is formed on the top contacts and on the top of the platform structure.

[0150] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top conductive layer is transparent.

[0151] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising the following steps: Step 1, providing a semiconductor substrate with an epitaxial structure; wherein the epitaxial structure includes, from top to bottom: a first type epitaxial layer, a light-emitting layer, and a second type epitaxial layer; Step 2: Form a bottom contact at the top of the epitaxial structure; Step 3: Form a platform structure through patterned epitaxial structure; Step 4: Form a photonic crystal structure array comprising multiple photonic crystal structures in the mesa structure; Step 5: Form a regenerated layer on the sidewalls of each photonic crystal structure; Step 6: Form a dielectric layer on top of the mesa structure and on top of the regenerated layer, and make the regenerated layer cover the bottom contacts; Step 7: Form a bottom connection structure on the top of the bottom contact; Step 8: By inverting the semiconductor substrate, the bottom connection structure is bonded to the IC backplane; then, the semiconductor substrate is removed; and Step 9: Form top contacts and top conductive layers on the top of the dielectric layer, the top of the regenerated layer, and the top of the mesa structure.

[0152] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, the dielectric layer further fills the space between adjacent mesa structures.

[0153] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, the photonic crystal structure is a one-dimensional nanostructure.

[0154] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed in the mesa structure along the light-emitting direction of the mesa structure.

[0155] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed perpendicular to the light-emitting layer.

[0156] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0157] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 1, the width of the mesa structure is no greater than 3 μm.

[0158] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 5, the material of the regenerated layer having intrinsically doped ions is the same as the material of the first type semiconductor layer and / or the material of the second type semiconductor layer, but without intentionally doped ions.

[0159] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the material of the regrowth layer is a single crystal.

[0160] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

[0161] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 5, the band gap of the regenerated layer is greater than the band gap of the light-emitting layer.

[0162] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 5, the thickness of the regenerated layer is less than the thickness of the light-emitting layer; and the resistance of the regenerated layer is higher than the resistance of the light-emitting layer.

[0163] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising the following steps: Step 1, providing a semiconductor substrate with an epitaxial structure; wherein the epitaxial structure includes, from top to bottom: a first type epitaxial layer, a light-emitting layer, and a second type epitaxial layer; Step 2: Form a bottom contact at the top of the epitaxial structure; Step 3: Form a platform structure through patterned epitaxial structure; Step 4: Form a photonic crystal structure array comprising multiple photonic crystal structures in the mesa structure; Step 5: Form a regeneration layer on the sidewalls and top of each photonic crystal structure and in the space between adjacent mesa structures, and make the regeneration layer cover the bottom contact. Step 6: Form a bottom connection structure on top of the bottom contact; Step 7: By inverting the semiconductor substrate, the bottom connection structure is bonded to the IC backplane; then, the semiconductor substrate is removed; and Step 8: Form top contacts and a top conductive layer on the top of the regenerated layer and the top of the mesa structure.

[0164] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, the photonic crystal structure is a one-dimensional nanostructure.

[0165] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed in the mesa structure along the light-emitting direction of the mesa structure.

[0166] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, a one-dimensional nanostructure is formed perpendicular to the light-emitting layer.

[0167] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0168] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 1, the width of the mesa structure is no greater than 3 μm.

[0169] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 5, the top surface of the regenerated layer is planarized and is higher than the top surface of the photonic crystal structure array and the top surface of the bottom contact; and the material of the regenerated layer having intrinsically doped ions is the same as the material of the first type semiconductor layer and / or the material of the second type semiconductor layer, but without intentionally doped ions.

[0170] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the material of the regrowth layer is a single crystal.

[0171] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

[0172] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 5, the band gap of the regenerated layer is greater than the band gap of the light-emitting layer.

[0173] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 5, the thickness of the regenerated layer is less than the thickness of the light-emitting layer; and the resistance of the regenerated layer is higher than the resistance of the light-emitting layer.

[0174] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, a bottom connection structure is formed in a regenerated layer on top of the bottom contact.

[0175] The micro-LED panel disclosed herein avoids non-radiative recombination at the sidewalls of the micro-LED structure. Furthermore, compared to conventional micro-LEDs, the micro-LED structure of this disclosure exhibits high directional emission without other reflective structures, thereby simplifying the micro-LED structure and reducing costs. Additionally, this disclosure can suppress non-radiative recombination at the surface of the micro-LED structure, thereby improving image quality and increasing the EQE of pixels.

[0176] Note that the various embodiments described above can be combined with any other embodiments described herein. The features and advantages described in the specification are not exhaustive, and in particular, many additional features and advantages will be apparent to those skilled in the art from the accompanying drawings, specification, and claims. Furthermore, it should be noted that the language used in the specification has been chosen primarily for readability and instruction purposes and is not intended to define or limit the subject matter of the invention. Attached Figure Description

[0177] To gain a more detailed understanding of this disclosure, reference can be made to the features of various embodiments, some of which are illustrated in the accompanying drawings. However, the drawings only illustrate relevant features of this disclosure and should not be considered limiting, as the specification may allow for other valid features.

[0178] For convenience, "up" is used to indicate the substrate away from the light-emitting structure shown in the figure, "down" indicates the direction towards the substrate, and other directional terms such as top, bottom, above, below, under, and below are explained accordingly.

[0179] Figure 1 This is a cross-sectional view of a micro LED panel according to some embodiments of the present disclosure (e.g., the first embodiment).

[0180] Figures 2 to 11 The steps of a method for manufacturing the micro LED panel according to some embodiments (e.g., the first embodiment) are illustrated respectively.

[0181] Figure 12 This is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., the second embodiment).

[0182] Figures 13 to 21 The steps of a method for manufacturing the microLED panel according to some embodiments (e.g., the second embodiment) are illustrated respectively.

[0183] Figure 22 This is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., the third embodiment).

[0184] Figures 23 to 32 The steps of a method for manufacturing the micro LED panel according to some embodiments (e.g., the third embodiment) are illustrated respectively.

[0185] Figure 33 This is a cross-sectional structural diagram of another micro LED panel according to some embodiments of the present disclosure (e.g., the fourth embodiment).

[0186] Figure 34 It is based on some embodiments of this disclosure (e.g., the fourth embodiment). Figure 33 A top view of the platform structure.

[0187] Figures 35 to 42 The steps of a method for manufacturing the micro LED panel according to some embodiments (e.g., the fourth embodiment) are illustrated respectively.

[0188] Figure 43 Another step 6 of depositing a dielectric layer is illustrated according to some embodiments (e.g., the fourth embodiment).

[0189] Figure 44 This is a cross-sectional structural diagram of another micro LED panel according to some embodiments of the present disclosure (e.g., the fourth embodiment).

[0190] Figure 45 This is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., the fifth embodiment).

[0191] Figures 46 to 54The steps of a method for manufacturing the micro LED panel according to some embodiments (e.g., the fifth embodiment) are illustrated respectively.

[0192] Figure 55 This is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., the sixth embodiment).

[0193] Figures 56 to 59 Steps 5 to 8 of the method for manufacturing the micro LED panel according to some embodiments (e.g., the sixth embodiment) are illustrated respectively.

[0194] By convention, the various features shown in the accompanying drawings may not be drawn to scale. Therefore, for clarity, the dimensions of various features may be arbitrarily enlarged or reduced. Additionally, some drawings may not depict all components of a given system, method, or apparatus. Finally, the same reference numerals may be used to denote the same features throughout the specification and drawings. Detailed Implementation

[0195] Numerous details are described herein to provide a thorough understanding of the exemplary embodiments illustrated in the accompanying drawings. However, some embodiments may be practiced without many specific details, and the scope of the claims is limited only to those features and aspects specifically set forth in the claims. Furthermore, well-known processes, components, and materials are not described exhaustively so as not to unnecessarily obscure relevant aspects of the embodiments described herein.

[0196] As described above, to address the problems in the related art, in some embodiments, this disclosure discloses a microLED panel comprising multiple microLED structures. The size of the microLED panel is no greater than 1 cm. The microLED structures are formed in an array within the microLED panel, having resolutions such as 720*480, 640*480, 1920*1080, 1280*720, 2k, or 4k. The diameter of the microLED structures is in the nanometer range, such as 20 nm to 100 nm.

[0197] Figure 1 This is a cross-sectional view of a micro LED panel according to some embodiments of the present disclosure (such as the first embodiment).

[0198] Reference Figure 1The micro-LED structure includes a mesa structure. The mesa structure is formed from bottom to top by a first-type epitaxial layer 01, a light-emitting layer 03, and a second-type epitaxial layer 02. The first and second types are different conductivity types; for example, the first type is P-type, and the second type is N-type. In another example, the first type is N-type, and the second type is P-type. In some embodiments, the material of the first type epitaxial layer 01 may be one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN and / or InN, or any combination thereof, preferably one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP, or any combination thereof. The material of the second type epitaxial layer 02 may be one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN and / or InN, or any combination thereof, preferably one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP, or any combination thereof.

[0199] In some embodiments, the light-emitting layer 03 is formed by stacking multiple pairs of quantum well layers. The quantum well layers can be made of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, etc. Furthermore, the thickness of the first type epitaxial layer 01 is greater than the thickness of the second type epitaxial layer 02, and the thickness of the light-emitting layer 03 is less than the thickness of the first type epitaxial layer 01. Preferably, the thickness of the first type epitaxial layer 01 is 700 nm to 2 μm, and the thickness of the second type epitaxial layer 02 is 100 nm to 200 nm. Preferably, the thickness of a single quantum well layer is no greater than 30 nm. In some examples, the light-emitting layer 03 comprises no more than three pairs of quantum well layers. Additionally, the light-emitting layer 03 has a straight, unbent shape.

[0200] In some embodiments, the first type epitaxial layer 01 may have multiple stacked first type semiconductor sublayers, and the second type epitaxial layer 02 may have multiple stacked second type semiconductor sublayers. For example, the top layer of the first type epitaxial sublayer is a P capping layer connected to the bottom of the light-emitting layer, and the bottom layer of the second type epitaxial sublayer is an N capping layer connected to the top of the light-emitting layer 03, for protecting the quantum well layer from damage.

[0201] Furthermore, the first type of epitaxial layer 01 includes one or more mirror layers 011 thereon. Figure 1(Not shown in the diagram). The mirror layer 011 may be formed on the bottom surface of the first type epitaxial layer 01 or inside the first type epitaxial layer 01. The material of the mirror layer is a combination of dielectric and metallic materials. In some embodiments, multiple mirror layers 011 are horizontally formed one after another in the first type epitaxial layer 01 at different horizontal height positions, thereby dividing the first type epitaxial layer 01 into multiple layers. In addition, the material of the first epitaxial layer is a single crystal and the material of the second epitaxial layer is a single crystal.

[0202] Reference Figure 1 A top contact 09 and a conductive layer 08 are formed on the top surface of the second-type epitaxial layer 02. The conductivity type of the top contact 09 is the same as that of the second-type epitaxial layer 02; for example, if the second type is n-type, the top contact 09 is an n-type top contact; or, if the second type is p-type, the top contact 09 is a p-type top contact. In some embodiments, the top contact 09 is made of metal or a metal alloy, such as AuGe, AuGeNi, etc. The top contact 09 is used to form an ohmic contact between the top conductive layer 08 and the second-type epitaxial layer 02 to optimize the electrical characteristics of the micro-LED. The diameter of the top contact 09 is approximately 20 nm to 50 nm, and the thickness of the top contact 09 is approximately 10 nm to 20 nm. In some embodiments, the top conductive layer 08 is transparent and conductive, such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO), etc.

[0203] In this disclosure, to achieve highly directional light emission from the micro-LED structure, a photonic crystal structure array is formed in the mesa structure. In some embodiments, the photonic crystal structure array is formed through the light-emitting layer 03. Furthermore, the photonic crystal structure array is formed on the emitting surface of the mesa structure. Preferably, the photonic crystal structure array is formed from top to bottom through the mesa structure.

[0204] Additionally, in some embodiments, the top conductive layer 08 is continuously formed over the entire micro-LED panel. Herein, "entire" means a significant portion or all of it. In another embodiment, refer to... Figure 11 The top conductive layer 08 is not connected to each other between adjacent mezzanine structures.

[0205] The details of the micro-LED panel will be further described below with reference to the accompanying drawings.

[0206] First Embodiment

[0207] To address the problems in the related technologies, a miniature LED panel is provided in the embodiments of this disclosure.

[0208] The micro-LED panel includes a micro-LED array. (See reference...) Figure 1The micro-LED structure in the micro-LED array includes at least a mesa structure and a photonic crystal structure array. The mesa structure includes 01, 02, and 03. From bottom to top, the mesa structure includes a first-type epitaxial layer 01, a light-emitting layer 03, and a second-type epitaxial layer 02. The photonic crystal structure array is formed through the mesa structure. There are gaps between adjacent photonic crystal structures 10. Here, the top of the photonic crystal structure is the top of the mesa structure, and the bottom of the photonic crystal structure is the bottom of the mesa structure. Furthermore, to achieve high image quality, the width of the mesa structure is no greater than 3 μm.

[0209] Furthermore, the photonic crystal structure 10 is a one-dimensional nanostructure. Multiple one-dimensional nanostructures are distributed in the array. These one-dimensional nanostructures are formed in the mesa structure along the light-emitting direction of the mesa structure. Additionally, the one-dimensional nanostructures are formed perpendicular to the light-emitting layer 03. The one-dimensional nanostructures are similar to nanowires, nanorods, nanofibers, etc. Preferably, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0210] Reference Figure 1 A dielectric layer 05 is filled in the gaps between adjacent photonic crystal structures. Furthermore, the dielectric layer 05 may be further formed on the sidewalls of the mesa structure. Preferably, the material of the dielectric layer 05 is selected from one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2. The dielectric layer 05 in the gaps between adjacent photonic crystal structures is transparent and electrically insulating. Additionally, the dielectric layer 05 is also formed in the spaces between adjacent mesa structures, or even fills the spaces between adjacent mesa structures.

[0211] A top contact 09 is formed on the top of the mesa structure, and a top conductive layer 08 is formed on the top contact 09 and the top of the mesa structure. Here, the top conductive layer 08 is continuously formed on the entire micro-LED structure array. Furthermore, when the top of the dielectric layer 05 is lower than the top of the photonic crystal structure, the top conductive layer 08 fills some gaps between adjacent photonic crystal structures; and the bottom of the top contact 09 fills some gaps between adjacent photonic crystal structures. Here, the light emission direction is from bottom to top, therefore the top conductive layer 08 is transparent.

[0212] In some embodiments, a bottom contact layer 06' is formed on the bottom surface of the first type epitaxial layer 01. The conductivity type of the bottom contact is the same as that of the first type epitaxial layer 01; for example, if the first type epitaxial layer 01 is P-type, the bottom contact layer 06' is also P-type. Furthermore, since light is emitted upwards or downwards from an LED mesa structure composed of or including the first type epitaxial layer 01, the second type epitaxial layer 02, and the light-emitting layer 03, the diameter of the bottom contact layer 06' is larger than the diameter of the top contact 09, while the diameter of the top contact 09 can be as small as possible, and the top contact 09 can also be as small as a point on the top surface of the second type epitaxial layer 02. For example, the width of the top contact 09 is less than 1 / 5, 1 / 6, 1 / 10, or 1 / 20 of the width of the second type epitaxial layer 02 or the mesa structure. In another embodiment, the diameter of the bottom contact layer 06' can also be equal to or smaller than the diameter of the top contact 09. A bottom connection layer 07' is formed at the bottom of the bottom contact layer 06'. The bottom connection layer 07' is used to connect to a bottom electrode, such as a contact pad, in an IC backplane 00. Furthermore, the diameter of the bottom connection layer 07' is 20 nm to 1 μm. Preferably, the diameter of the bottom connection layer 07' is 800 nm to 1 μm. Additionally, the center of the bottom contact layer 06' is aligned vertically with the center of the top contact 09. The materials of the bottom contact layer 06' and the bottom connection layer 07' are transparent conductive materials, such as ITO or FTO. Alternatively, the materials of the bottom contact layer 06' and the bottom connection layer 07' are not transparent. The materials of the bottom contact layer 06' and the bottom connection layer 07' can be conductive metals. Preferably, the material of the bottom contact layer 06' can be at least one selected from Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt. The material of the bottom connection layer 07' can be at least one selected from Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt.

[0213] In some embodiments, the center of the bottom contact layer 06' is vertically aligned with the center of the first type epitaxial layer 01. However, in another embodiment, the center of the bottom contact layer 06' is not vertically aligned with the center of the first type epitaxial layer 01.

[0214] In some embodiments, the method for manufacturing the aforementioned micro LED panel in the first embodiment includes the following steps:

[0215] Figures 2 to 11 The steps of a method for manufacturing a micro LED panel according to some embodiments (e.g., the first embodiment) are illustrated respectively.

[0216] Reference Figure 2 Step 1 includes providing a semiconductor substrate 00 with an epitaxial structure.

[0217] Here, the epitaxial structure, from top to bottom, includes a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. The semiconductor substrate 00” can be made of materials such as GaN or GaAs. The epitaxial structure is grown on the substrate 00”.

[0218] Reference Figure 3 Step 2 includes forming a bottom contact layer 06' and a bottom connection layer 07' sequentially on the top surface of the first type epitaxial layer 01.

[0219] Here, a bottom contact layer 06' and a bottom bonding layer 07' are deposited sequentially using a conventional physical vapor deposition method. The bottom bonding layer 07' also serves as a metal bonding layer for the subsequent metal bonding process in step 3.

[0220] Reference Figure 4 Step 3 includes bonding the bottom interconnect layer 07' to the IC backplane 00 by inverting the semiconductor substrate 00". Then, the semiconductor substrate 00 is removed.

[0221] Here, the semiconductor substrate 00” with the epitaxial structure is first inverted. Then, the bottom interconnect layer 07’ is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00” is removed by a conventional removal process such as laser lift-off.

[0222] Reference Figure 5 Step 4 includes forming a photonic crystal structure array by etching the epitaxial structure.

[0223] Here, the second type epitaxial layer 02, the light-emitting layer 03, and the first type epitaxial layer 01 are sequentially etched from top to bottom using a plasma etching process, and the etching stops at the top of the bottom contact layer 06'. Thus, a photonic crystal structure array is formed from top to bottom through the entire mesa structure. Preferably, the etching power is 200W to 800W, and the etching time is 50S to 300S.

[0224] Reference Figure 6 and Figure 7 Step 5 includes forming a space to define a mesa structure by etching the photonic crystal structure array, bottom contact layer 06' and bottom connection layer 07' from top to bottom.

[0225] Here, refer to Figure 6 The photonic crystal structure array is further etched using a conventional plasma etching process to define the mesa structures; spaces are formed between adjacent mesa structures. (See reference...) Figure 7 The bottom contact layer 06' and the bottom connection layer 07' are further etched from top to bottom, so that the bottom of the space extends to the top of the IC backplane 00. Therefore, the bottom connection layer 06' and the bottom contact layer 07' are isolated by the space.

[0226] Reference Figure 8 Step 6 includes forming a dielectric layer 05 on the sidewall of the photonic crystal structure.

[0227] Here, a dielectric layer 05 is deposited on the sidewalls of the photonic crystal structure using a conventional chemical vapor deposition method. The dielectric layer 05 further fills the gaps between adjacent photonic crystal structures. Furthermore, the dielectric layer 05 is formed in the space between adjacent mesa structures. Preferably, the dielectric layer 05 fills the space between adjacent mesa structures. In another embodiment, the dielectric layer 05 is formed only on the sidewalls of each mesa structure, without filling the space between adjacent mesa structures.

[0228] Reference Figure 9 and Figure 10 Step 7 includes forming a top contact 09 and a top conductive layer 08 on the top of the dielectric layer 05 and the top of the mesa structure.

[0229] Here, refer to Figure 9 A top contact 09 is deposited on top of the second type epitaxial layer 02, where other areas are protected using a mask, and then the mask is removed. Then, refer to... Figure 10 A top conductive layer 08 is deposited on the second epitaxial layer 02 using a conventional vapor deposition process. Here, the top conductive layer 08 is formed on top of the photonic crystal structure, on top of the dielectric layer 05, and covers the top contact 09. In another embodiment, the dielectric layer 05 is formed only on the sidewall of the mesa structure and does not fill the space, so the top conductive layer 08 is further formed in the space between adjacent mesa structures.

[0230] In another embodiment, reference is made to Figure 11 The top conductive layer 08 is not connected to each other between adjacent mezzanine structures.

[0231] Second Embodiment

[0232] To address the problems in the related technologies, a miniature LED panel is provided in the embodiments of this disclosure.

[0233] The micro-LED panel includes a micro-LED array. Figure 12 This is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., the second embodiment).

[0234] Reference Figure 12The micro-LED structure in the micro-LED array includes at least a mesa structure and a photonic crystal structure array. The mesa structure, from bottom to top, includes a first-type epitaxial layer 01, a light-emitting layer 03, and a second-type epitaxial layer 02. The photonic crystal structure array is formed through the mesa structure. There are gaps between adjacent photonic crystal structures 10. Here, the top of the photonic crystal structure is the top of the mesa structure, and the bottom of the photonic crystal structure is the bottom of the mesa structure. Furthermore, to achieve high image quality, the width of the mesa structure is no greater than 3 μm.

[0235] In some embodiments, the photonic crystal structure 10 is a one-dimensional nanostructure. Multiple one-dimensional nanostructures are distributed in an array. The one-dimensional nanostructures are formed in the mesa structure along the light-emitting direction of the mesa structure. Furthermore, the one-dimensional nanostructures are formed perpendicular to the light-emitting layer 03. The one-dimensional nanostructures are similar to nanowires, nanorods, nanofibers, etc. Preferably, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0236] A regenerated layer 04 is formed on at least a portion of the sidewall of the mesa structure. Here, the regenerated layer is formed on the entire sidewall of the mesa structure. In another embodiment, the regenerated layer is formed on at least a portion of the sidewall of the first type epitaxial layer, the entire sidewall of the light-emitting layer, and at least a portion of the sidewall of the first type epitaxial layer. In some embodiments, the regenerated layer may be formed on at least a portion of the sidewall of the first type epitaxial layer and the entire sidewall of the light-emitting layer; or, the regenerated layer may be formed on at least a portion of the sidewall of the second type epitaxial layer and the entire sidewall of the light-emitting layer; or, the regenerated layer may be formed on at least a portion of the sidewall of the light-emitting layer.

[0237] Refer again Figure 12 Furthermore, the regenerated layer 04 is also formed on the sidewalls of the photonic crystal structure. Preferably, the regenerated layer fills the gaps between adjacent photonic crystal structures.

[0238] Furthermore, the regenerated layer 04 formed on the sidewall of the light-emitting layer 03 is not parallel to the extending direction of the light-emitting layer 03. The light-emitting layer 03 includes a top surface, an edge surface, and a bottom surface; and the regenerated layer 04 grows only on the edge surface of the light-emitting layer 03, and not on the top and bottom surfaces. Preferably, the tilt angle of the regenerated layer 04 on the sidewall of the light-emitting layer is 30 to 90 degrees relative to the horizontal extending direction of the light-emitting layer 03. That is, the regenerated layer 04 grows on the end face of the light-emitting layer 03, not on the top and bottom surfaces. Additionally, the light-emitting layer 03 includes multiple pairs of quantum wells; the regenerated layer 04 is not parallel to the surface of each of the multiple pairs of quantum wells. Here, the light-emitting layer 03 has a straight, unbent shape. Preferably, the diameter of the mesa structure is no greater than 3 μm. Furthermore, the bottom of the photonic crystal structure array is aligned with the bottom of the mesa structure, and the top of the photonic crystal structure array is aligned with the top of the regenerated layer 04.

[0239] Here, the material of the regenerated layer 04 with intrinsically doped ions is the same as the material of the first type epitaxial layer 01 and / or the second type epitaxial layer 02, but without intentionally intriguing doped ions. For example, when the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are the same, and the intentional ion doping levels of the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are different, the material of the regenerated layer 04 can be the same as the materials of the underlying first type epitaxial layer 01 and the second type epitaxial layer 02, but without intentionally intriguing doped ions. In another example, when the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are not the same, and the intentional ion doping levels of the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are different, the material of the regenerated layer 04 can be the same as the material of the first type epitaxial layer 01 or the second type epitaxial layer 02, but without intentionally intriguing doped ions. The light-emitting layer is the active region of the PN junction formed by the first type epitaxial layer 01 and the second type epitaxial layer 02, and can be considered to be composed of two materials of the first type epitaxial layer 01 and the second type epitaxial layer 02. In some embodiments, the portion of the material of the regenerated layer covering the first type epitaxial layer 01 is the same as the underlying first type epitaxial layer 01, but without any intrinsically intentional doping of the first type epitaxial layer 01, and the portion of the material of the regenerated layer covering the second type epitaxial layer 02 is the same as the underlying second type epitaxial layer 02, but without any intrinsically intentional doping of the second type epitaxial layer 02. In some embodiments, the regenerated layer 04 may have some intrinsic doping level or no doping level. In some embodiments, the material growth parameters, such as ambient / gas pressure, power, and the material used for the regenerated process, are the same as or similar to the material growth parameters of the first type epitaxial layer 01 and / or the second type epitaxial layer 02. The material of the regenerated layer 04 must be lattice-matched with the light-emitting layer 03, the first type epitaxial layer 01, and / or the second type epitaxial layer 02. Preferably, the material of the regenerated layer 04 is a single crystal, the material of the first epitaxial layer 01 is a single crystal, and the material of the second epitaxial layer 02 is a single crystal. Furthermore, the material of the regenerated layer 04 is at least one of or any combination of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, preferably one or any combination of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN. In another embodiment, the material of the regenerated layer 04 is not intentionally doped with ions and is different from the material of the first type of epitaxial layer or the material of the second type of epitaxial layer 02.

[0240] The resistance of the regenerated layer 04 is higher than that of the light-emitting layer 03, and the regenerated layer 04 is non-conductive, thereby ensuring the normal operation of the micro-LED structure and preventing carrier diffusion outside the light-emitting layer 03. Preferably, the band gap of the regenerated layer 04 is larger than that of the light-emitting layer 03. Furthermore, the thickness of the regenerated layer 04 is smaller than that of the light-emitting layer 03; preferably, the thickness of the regenerated layer 04 is no greater than 100 nm or 10 nm. In another embodiment, the thickness of the regenerated layer 04 is equal to or greater than the thickness of the light-emitting layer 03.

[0241] Reference Figure 12 A dielectric layer 05 is further formed in the space between adjacent mesa structures. Preferably, the dielectric layer 05 fills the space between adjacent mesa structures. The dielectric layer 05 is preferably transparent and electrically insulating. Preferably, the material of the dielectric layer 05 is selected from one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2 and / or ZrO2.

[0242] A top contact 09 is formed on the top of the mesa structure, and a top conductive layer 08 is formed on the top contact 09 and the top of the mesa structure. Here, the top conductive layer 08 is continuously formed on the entire micro-LED structure array. Furthermore, when the top of the dielectric layer 05 is lower than the top of the photonic crystal structure, the top conductive layer 08 fills some gaps between adjacent photonic crystal structures; and the bottom of the top contact 09 fills some gaps between adjacent photonic crystal structures. Here, the light emission direction is from bottom to top, therefore the top conductive layer 08 is transparent.

[0243] A bottom contact 06 is formed on the bottom surface of the first type epitaxial layer 02. The conductivity type of this bottom contact is the same as that of the first type epitaxial layer 01; for example, if the first type epitaxial layer 01 is P-type, the bottom contact 06 is also P-type. Furthermore, since light is emitted upwards or downwards from the mesa structure, the diameter of the bottom contact 06 is larger than the diameter of the top contact 09, while the diameter of the top contact 09 can be as small as possible, and the top contact 09 can also be as small as a point on the top surface of the second type epitaxial layer 02. In another embodiment, the diameter of the bottom contact 06 can also be equal to or smaller than the diameter of the top contact 09. A bottom connection structure 07 is formed at the bottom of the bottom contact 06. The bottom connection structure 07 is used to connect to a bottom electrode, such as a contact pad, in the IC backplane 00. Furthermore, the diameter of the bottom connection structure 07 is 20 nm to 1 μm. Preferably, the diameter of the bottom connection structure 07 is 800 nm to 1 μm. Furthermore, the center of the bottom contact 06 is aligned vertically with the center of the top contact 09. Furthermore, the bottom contact 06 and the bottom connection structure 07 are made of transparent conductive materials, such as ITO or FTO. Alternatively, the materials of the bottom contact 06 and the bottom connection structure 07 may not be transparent. The materials of the bottom contact 06 and the bottom connection structure 07 may be conductive metals. Preferably, the material of the bottom contact 06 may be at least one selected from Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt. The material of the bottom connection structure 07 may be at least one selected from Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt.

[0244] In some embodiments, the center of the bottom contact 06 is vertically aligned with the center of the first type epitaxial layer 01. However, in another embodiment, the center of the bottom contact 06 is not vertically aligned with the center of the first type epitaxial layer 01. In some embodiments, the bottom contact 06 and / or the bottom connection structure 07 have the same width as the first type epitaxial layer 01 or the mesa structure.

[0245] In this second embodiment, the manufacturing method of the aforementioned micro LED panel includes the following steps.

[0246] Figures 13 to 21 The steps of a method for manufacturing a micro LED panel according to some embodiments (e.g., the second embodiment) are illustrated respectively.

[0247] Reference Figure 13 Step 1 includes providing a semiconductor substrate 00 with an epitaxial structure.

[0248] Here, the epitaxial structure, from top to bottom, includes a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. The semiconductor substrate 00” can be made of materials such as GaN or GaAs. The epitaxial structure is grown on the substrate 00”.

[0249] Reference Figure 14 Step 2 includes forming a photonic crystal structure array in the epitaxial structure by etching the epitaxial structure.

[0250] Here, the first type epitaxial layer 01, the light-emitting layer 03, and the second type epitaxial layer 02 are sequentially etched from top to bottom using a plasma etching process, and the etching stops at the top of the semiconductor substrate 00”, thus forming a photonic crystal structure array 10 that extends from top to bottom through the entire mesa structure. Preferably, the etching power is 200W to 800W, and the etching time is 50S to 300S.

[0251] Reference Figure 15 Step 3 includes forming spaces by etching each photonic crystal structure to define the mesa structure.

[0252] Here, the photonic crystal structure array is further etched using a conventional plasma etching process to define the mesa structure. In some embodiments, spaces are formed between adjacent mesa structures.

[0253] Reference Figure 16 Step 4 includes forming a regenerated layer 04 on the sidewall of the photonic crystal structure.

[0254] Here, during the regrowth process, the temperature is between 400°C and 1000°C, and the regeneration time is between 5 seconds and 1000 seconds. The material used for the regrowth process is preferably the same as the material of the first type of epitaxial layer and / or the second type of epitaxial layer, but without intentionally doped ions. The regrowth layer is first grown on the sidewalls and top of each photonic crystal structure. Then, the regrowth layer on the top of the photonic crystal structure is removed by conventional chemical mechanical polishing. In some embodiments herein, the regrowth layer fills the gaps between adjacent photonic crystal structures but does not fill the spaces between adjacent mesa structures.

[0255] Reference Figure 17 Step 5 includes forming bottom contacts on top of the photonic crystal structure array.

[0256] Here, bottom contact 06 is deposited on top of the crystal structure array and the top of the regenerated layer using conventional physical vapor deposition, wherein other areas are protected by a photoresist mask, and then the mask is removed by conventional wet etching.

[0257] Reference Figure 18 Step 6 includes forming a dielectric layer 05 on top of the photonic crystal structure array and on top of the regenerated layer 04, and making the dielectric layer 05 cover the bottom contact 06.

[0258] Here, a dielectric layer 05 is first deposited on top of the regenerated layer 04 and on top of the photonic crystal structure array using a conventional chemical vapor deposition method, and the dielectric layer 05 covers the bottom contact 06.

[0259] Then, openings are formed in dielectric layer 05 using conventional plasma etching methods to expose bottom contact 06.

[0260] Reference Figure 19 Step 7 includes forming a bottom connection structure 07 on the top of the bottom contact 06.

[0261] Here, a conductive material is deposited into the opening using a physical vapor deposition process to form the bottom connection post. In this embodiment, the conductive material can be a conventional metal.

[0262] Reference Figure 20 Step 8 includes bonding the bottom connection structure to the IC backplane by inverting the semiconductor substrate. Then, the semiconductor substrate is removed.

[0263] Here, the semiconductor substrate 00” with the epitaxial structure is first inverted. Then, the bottom connection structure 07 is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00” is removed by a conventional removal process such as laser lift-off.

[0264] Reference Figure 21 Step 9 includes forming a top contact 09 and a top conductive layer 08 on the top of the dielectric layer 05 and the top of the mesa structure.

[0265] Here, a top contact 09 is deposited on top of the second type epitaxial layer 02, with other areas protected by a mask, and then the mask is removed. Then, a top conductive layer 08 is deposited on the second epitaxial layer 02 using a conventional vapor deposition process. Here, the top conductive layer 08 is formed on top of the photonic crystal structure, on top of the dielectric layer 05, and covers the top contact 09. In another embodiment, the dielectric layer 05 is formed only on the sidewalls of the mesa structure and does not fill the space between adjacent mesa structures; therefore, the top conductive layer 08 is further formed in the space between adjacent mesa structures.

[0266] Third Embodiment

[0267] The micro-LED panel of the third embodiment includes a micro-LED structure array. Figure 22 This is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., the third embodiment).

[0268] Reference Figure 22The difference between the third embodiment and the second embodiment is as follows: the space between adjacent mesa structures is filled with a regenerated layer 04. In some embodiments, the bottom contact 06 and / or the bottom connection structure 07 have the same width as the first type epitaxial layer 01 or the mesa structure. Other details of the micro LED panel can be found in the second embodiment and will not be repeated here.

[0269] The manufacturing method of the aforementioned micro-LED panel in this third embodiment includes the following steps.

[0270] Figures 23 to 32 The steps of a method for manufacturing a micro LED panel according to some embodiments (e.g., the second embodiment) are illustrated respectively.

[0271] Reference Figure 23 Step 1 includes providing a semiconductor substrate 00 with an epitaxial structure.

[0272] Here, the epitaxial structure, from top to bottom, includes a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. The semiconductor substrate 00” can be made of materials such as GaN or GaAs. The epitaxial structure is grown on this substrate 00”.

[0273] Reference Figure 24 Step 2 includes forming a photonic crystal structure array in the epitaxial structure by etching the epitaxial structure.

[0274] Here, the first type epitaxial layer 01, the light-emitting layer 03, and the second type epitaxial layer 02 are sequentially etched from top to bottom using a plasma etching process, and the etching stops at the top of the semiconductor substrate 00”, thus forming a photonic crystal structure array 10 that extends from top to bottom through the entire mesa structure. Preferably, the etching power is 200W to 800W, and the etching time is 50S to 300S.

[0275] Reference Figure 25 Step 3 includes forming spaces by etching each photonic crystal structure to define the mesa structure.

[0276] Here, the photonic crystal structure array is further etched using a conventional plasma etching process to define the mesa structure. In some embodiments, spaces are formed between adjacent mesa structures.

[0277] Reference Figure 26 Step 4 includes forming a regenerated layer 04 on the sidewall of the photonic crystal structure and filling the space between adjacent mesa structures with the regenerated layer 04.

[0278] Here, in this regeneration process, the temperature is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds. Here, the material used for the regeneration process is preferably the same as the material of the first type of epitaxial layer and / or the second type of epitaxial layer, but without intentionally doped ions. The regenerated layer is first grown on the sidewalls of each photonic crystal structure and on the top of each photonic crystal structure. Then, the regenerated layer 04 on the top of the photonic crystal structure is removed by chemical mechanical polishing. In some embodiments herein, the regenerated layer further fills the gaps between adjacent photonic crystal structures.

[0279] Reference Figure 27 Step 5 includes forming a bottom contact 09 on top of the photonic crystal structure array.

[0280] Here, bottom contacts 06 are deposited on top of the crystal structure array and on top of the regenerated layer 04 using conventional physical vapor deposition, wherein other areas are protected by a photoresist mask, and then the mask is removed by conventional wet etching.

[0281] Reference Figure 28 Step 6 includes forming a dielectric layer 05 on top of the photonic crystal structure array and on top of the regenerated layer 04, and making the dielectric layer 05 cover the bottom contact 06.

[0282] Here, a dielectric layer 05 is first deposited on top of the regenerated layer 04 and on top of the photonic crystal structure array using a conventional chemical vapor deposition method, and the dielectric layer 05 covers the bottom contact 06.

[0283] Then, openings are formed in dielectric layer 05 using conventional plasma etching methods to expose bottom contact 06.

[0284] Reference Figure 29 Step 7 includes forming a bottom connection structure 07 on the top of the bottom contact 06.

[0285] Here, a conductive material is deposited into the opening using a physical vapor deposition process to form the bottom connection post. In this embodiment, the conductive material can be a conventional metal.

[0286] Reference Figure 30 Step 8 includes bonding the bottom connection structure 07 to the IC backplane 00 by inverting the semiconductor substrate 00. Then, the semiconductor substrate 00 is removed.

[0287] Here, the semiconductor substrate 00” with the epitaxial structure is first inverted. Then, the bottom connection structure 07 is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00” is removed by a conventional removal process such as laser lift-off.

[0288] Reference Figure 31and Figure 32 Step 9 includes forming a top contact 09 and a top conductive layer 08 on the top of the dielectric layer 05 and the top of the mesa structure.

[0289] Here, refer to Figure 31 A top contact 09 is deposited on top of the second type epitaxial layer 02, where other areas are protected using a mask, and then the mask is removed. Then, refer to... Figure 32 A top conductive layer 08 is deposited on the second epitaxial layer 02 using a conventional vapor deposition process. Here, the top conductive layer 08 is formed on top of the photonic crystal structure, on top of the regenerated layer 04, and covers the top contact 09.

[0290] Fourth embodiment

[0291] To address the problems in the related technologies, a miniature LED panel is provided in the embodiments of this disclosure.

[0292] The micro-LED panel includes a micro-LED array. Figure 33 This is a cross-sectional structural diagram of another micro LED panel according to some embodiments of the present disclosure (e.g., the fourth embodiment).

[0293] Reference Figure 33 The micro-LED structure in the micro-LED array includes at least a mesa structure and a photonic crystal structure array. The mesa structure, from bottom to top, includes a first-type epitaxial layer 01, a light-emitting layer 03, and a second-type epitaxial layer 02. The photonic crystal structure array is formed through the mesa structure. There are gaps between adjacent photonic crystal structures 10. Here, the top of the photonic crystal structure is the top of the mesa structure, and the bottom of the photonic crystal structure is the bottom of the mesa structure. Furthermore, to achieve high image quality, the width of the mesa structure is no greater than 3 μm.

[0294] Figure 34 It is based on some embodiments of this disclosure (e.g., the fourth embodiment). Figure 33 A top view of the platform structure.

[0295] In addition, refer to Figure 34 The photonic crystal structure array includes a central photonic crystal structure 3402. Other photonic crystal structures, such as 3404, are formed around the center of the photonic crystal structure. Furthermore, the diameter of the central photonic crystal structure 3402 is larger than the diameter of each of the other photonic crystal structures (e.g., 3404).

[0296] In some embodiments, the photonic crystal structure 10 is a one-dimensional nanostructure. Multiple one-dimensional nanostructures are distributed in an array. The one-dimensional nanostructures are formed in the mesa structure along the light-emitting direction of the mesa structure. Furthermore, the one-dimensional nanostructures are formed perpendicular to the light-emitting layer 03. The one-dimensional nanostructures are similar to nanowires, nanorods, nanofibers, etc. Preferably, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0297] Reference Figure 33 A dielectric layer 05 is filled in the gaps between adjacent photonic crystal structures. Furthermore, the dielectric layer 05 may be further formed on the sidewalls of the mesa structure. Preferably, the material of the dielectric layer 05 is selected from one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2. The dielectric layer 05 in the gaps between adjacent photonic crystal structures is transparent and electrically insulating. Additionally, the dielectric layer 05 is also formed in the spaces between adjacent mesa structures, or even fills the spaces between adjacent mesa structures.

[0298] In some embodiments, a top contact 09 is formed on the top of the mesa structure, and a top conductive layer 08 is formed on the top contact 09 and the top of the mesa structure. Here, the top conductive layer 08 is continuously formed over the entire micro-LED structure array. Furthermore, when the top of the dielectric layer 05 is lower than the top of the photonic crystal structure, the top conductive layer 08 fills some gaps between adjacent photonic crystal structures; and the bottom of the top contact 09 fills some gaps between adjacent photonic crystal structures. Here, the light emission direction is from bottom to top, therefore the top conductive layer 08 is transparent.

[0299] A bottom contact layer 06' is formed on the bottom surface of the first type epitaxial layer 02. The conductivity type of the bottom contact is the same as that of the first type epitaxial layer 01; for example, if the first type epitaxial layer 01 is P-type, the bottom contact layer 06' is also P-type. Furthermore, since light is emitted upwards or downwards from the mesa structure, the diameter of the bottom contact layer 06' is larger than the diameter of the top contact 09, while the diameter of the top contact 09 can be as small as possible, and the top contact 09 can also be as small as a point on the top surface of the second type epitaxial layer 02. In another embodiment, the diameter of the bottom contact layer 06' can also be equal to or smaller than the diameter of the top contact 09. A bottom connection layer 07' is formed at the bottom of the bottom contact layer 06'. The bottom connection layer 07' is used to connect to a bottom electrode, such as a contact pad, in an IC backplane 00. Furthermore, the diameter of the bottom connection layer 07 is 20 nm to 1 μm. Preferably, the diameter of the bottom connection layer 07' is 800 nm to 1 μm. Furthermore, the center of the bottom contact layer 06' is vertically aligned with the center of the top contact 09. Additionally, the materials of the bottom contact layer 06' and the bottom connecting layer 07' are transparent conductive materials, such as ITO or FTO. Alternatively, the materials of the bottom contact layer 06' and the bottom connecting layer 07' are not transparent. The materials of the bottom contact layer 06' and the bottom connecting layer 07' can be conductive metals. Preferably, the material of the bottom contact layer 06' can be at least one selected from Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt. The material of the bottom connecting layer 07' can be at least one selected from Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt.

[0300] In some embodiments, the center of the bottom contact layer 06' is vertically aligned with the center of the first type epitaxial layer 01. However, in another embodiment, the center of the bottom contact layer 06' is not vertically aligned with the center of the first type epitaxial layer 01.

[0301] The manufacturing method of the aforementioned micro-LED panel in the fourth embodiment includes the following steps:

[0302] Figures 35 to 42 The steps of a method for manufacturing a micro LED panel according to some embodiments (e.g., the fourth embodiment) are illustrated respectively.

[0303] Reference Figure 35 Step 1 includes providing a semiconductor substrate 00 with an epitaxial structure.

[0304] Here, the epitaxial structure, from top to bottom, includes a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. The semiconductor substrate 00” can be made of materials such as GaN or GaAs. The epitaxial structure is grown on the substrate 00”.

[0305] Reference Figure 36Step 2 includes forming a bottom contact layer 06' and a bottom connection layer 07' sequentially on the top surface of the first type epitaxial layer 01.

[0306] Here, a bottom contact layer 06' and a bottom bonding layer 07' are deposited sequentially using a conventional physical vapor deposition method. The bottom bonding layer 07' also serves as a metal bonding layer for the subsequent metal bonding process in step 3.

[0307] Reference Figure 37 Step 3 includes bonding the bottom interconnect layer 07' to the IC backplane 00 by inverting the semiconductor substrate 00". Then, the semiconductor substrate 00 is removed.

[0308] Here, the semiconductor substrate 00” with the epitaxial structure is first inverted. Then, the bottom interconnect layer 07’ is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00” is removed by a conventional removal process such as laser lift-off.

[0309] Reference Figure 38 Step 4 includes forming a top contact 09 on the top of the second type epitaxial layer 02.

[0310] Here, a top contact 09 is deposited on top of the second type epitaxial layer 02 using a conventional physical vapor deposition process, wherein other areas are protected by a mask, and then the mask is removed by a conventional wet etching process.

[0311] Reference Figure 39 and Figure 40 Step 5 includes forming a mesa structure in the epitaxial structure by etching the epitaxial structure, the bottom contact layer 06' and the bottom connection layer 07' from top to bottom; and forming a photonic crystal structure array by etching the epitaxial structure.

[0312] Here, refer to Figure 39 The second type epitaxial layer 02, the light-emitting layer 03, and the first type epitaxial layer 01 are sequentially etched from top to bottom using a plasma etching process, with etching stopping at the top of the bottom contact layer 06'. This forms a mesa structure on the bottom contact layer 06', and the photonic crystal structure array is formed from top to bottom through the entire mesa structure. Then, referring to... Figure 40 The bottom contact layer 06' and the bottom connection layer 07' are further etched from top to bottom, so that the bottom of the space extends to the top of the IC backplane 00. Therefore, the bottom connection layer 06' and the bottom contact layer 07' are isolated by the space.

[0313] In the etching process of step 5, a central photonic crystal structure is formed below the unetched top contact 09. The diameter of the central photonic crystal structure is larger than the diameter of each of the other photonic crystal structures. Preferably, the etching power is 200W to 800W, and the etching time is 50S to 300S.

[0314] Reference Figure 41 Step 6 includes forming a dielectric layer 05 on the sidewall of the photonic crystal structure.

[0315] Here, a dielectric layer 05 is deposited on the sidewalls of the photonic crystal structure using a conventional chemical vapor deposition method. The dielectric layer 05 further fills the gaps between adjacent photonic crystal structures. Furthermore, the dielectric layer 05 is formed in the space between adjacent mesa structures. Preferably, the dielectric layer 05 fills the space between adjacent mesa structures. In another embodiment, the dielectric layer 05 is formed only on the sidewalls of each mesa structure, without filling the space between adjacent mesa structures.

[0316] Reference Figure 42 Step 7 includes forming a top contact 09 and a top conductive layer 08 on the top of the dielectric layer 05 and the top of the mesa structure.

[0317] Here, a top contact 09 is deposited on top of the second type epitaxial layer 02, with other areas protected by a mask, which is then removed. A top conductive layer 08 is then deposited on the second epitaxial layer 02 using a conventional vapor deposition process. Here, the top conductive layer 08 is formed on top of the photonic crystal structure, on top of the dielectric layer 05, and covers the top contact 09. In another embodiment, the dielectric layer 05 is formed only on the sidewall of the mesa structure and does not fill the space, so the top conductive layer 08 is further formed in the space between adjacent mesa structures.

[0318] In another embodiment, reference is made to Figure 11 The top conductive layer 08 is not connected to each other between adjacent mezzanine structures.

[0319] Figure 43 The illustration shows another step 6 of depositing a dielectric layer according to some embodiments (e.g., the fourth embodiment).

[0320] Figure 44 This is a cross-sectional structural diagram of another micro LED panel according to some embodiments of the present disclosure (e.g., the fourth embodiment).

[0321] In another embodiment, reference is made to Figure 43 In step 6, dielectric layer 05 is formed only on the sidewall of the platform structure, and dielectric layer 05 does not fill the space. Therefore, in step 7, referring to... Figure 44 A top conductive layer 08 is further formed in the space between adjacent platform structures.

[0322] Fifth embodiment

[0323] To address the problems in the related technologies, a miniature LED panel is provided in the embodiments of this disclosure.

[0324] The micro-LED panel includes a micro-LED array. (See reference...) Figure 45 The micro-LED structure in the micro-LED array includes at least a mesa structure and a photonic crystal structure array. The mesa structure, from bottom to top, includes a first-type epitaxial layer 01, a light-emitting layer 03, and a second-type epitaxial layer 02. The photonic crystal structure array is formed through the mesa structure. There are gaps between adjacent photonic crystal structures 10. Here, the top of the photonic crystal structure is the top of the mesa structure, and the bottom of the photonic crystal structure is the bottom of the mesa structure. Furthermore, to achieve high image quality, the width of the mesa structure is no greater than 3 μm.

[0325] In addition, refer to Figure 34 The photonic crystal structure array includes a central photonic crystal structure; other photonic crystal structures are formed around the center of the photonic crystal structure. Furthermore, the diameter of the central photonic crystal structure is larger than the diameter of each of the other photonic crystal structures.

[0326] Furthermore, the photonic crystal structure is a one-dimensional nanostructure. Multiple one-dimensional nanostructures are distributed in an array. These one-dimensional nanostructures are formed within the mesa structure along the light-emitting direction. Additionally, the one-dimensional nanostructures are formed perpendicular to the light-emitting layer O3. The one-dimensional nanostructures are similar to nanowires, nanorods, nanofibers, etc. Preferably, the diameter of the one-dimensional nanostructure is no greater than 1000 nm.

[0327] A regenerated layer 04 is formed on at least a portion of the sidewall of the mesa structure. Here, the regenerated layer is formed on the entire sidewall of the mesa structure. In another embodiment, the regenerated layer is formed on at least a portion of the sidewall of the first type epitaxial layer, the entire sidewall of the light-emitting layer, and at least a portion of the sidewall of the first type epitaxial layer. In some embodiments, the regenerated layer may be formed on at least a portion of the sidewall of the first type epitaxial layer and the entire sidewall of the light-emitting layer; or, the regenerated layer may be formed on at least a portion of the sidewall of the second type epitaxial layer and the entire sidewall of the light-emitting layer; or, the regenerated layer may be formed on at least a portion of the sidewall of the light-emitting layer.

[0328] Refer again Figure 45 Furthermore, the regenerated layer 04 is also formed on the sidewalls of the photonic crystal structure. Preferably, the regenerated layer 04 fills the gaps between adjacent photonic crystal structures.

[0329] Furthermore, the regenerated layer 04 formed on the sidewall of the light-emitting layer 03 is not parallel to the extension direction of the light-emitting layer 03. The light-emitting layer 03 includes a top surface, an edge surface, and a bottom surface; and the regenerated layer 04 grows only on the edge surface of the light-emitting layer 03, and not on the top and bottom surfaces. Preferably, the tilt angle of the regenerated layer 04 on the sidewall of the light-emitting layer is 30 to 90 degrees relative to the extension direction of the light-emitting layer and the horizontal direction of the light-emitting layer 03. That is, the regenerated layer 04 grows on the end face of the light-emitting layer 03, not on the top and bottom surfaces. Additionally, the light-emitting layer 03 includes multiple pairs of quantum wells; the regenerated layer 04 is not parallel to the surface of each of the multiple pairs of quantum wells. Here, the light-emitting layer 03 has a straight, unbent shape. Preferably, the diameter of the mesa structure is no greater than 3 μm. Furthermore, the bottom of the photonic crystal structure array is aligned with the bottom of the mesa structure, and the top of the photonic crystal structure array is aligned with the top of the regenerated layer 04.

[0330] Here, the material of the regenerated layer 04 with intrinsically doped ions is the same as the material of the first type epitaxial layer 01 or the second type epitaxial layer 02, but without intentionally non-intrinsically doped ions. The material of the regenerated layer 04 must be lattice-matched with the light-emitting layer 03, the first type epitaxial layer 01, or the second type epitaxial layer 02. Preferably, the material of the regenerated layer 04 is a single crystal, the material of the first epitaxial layer 01 is a single crystal, and the material of the second epitaxial layer 02 is a single crystal. Furthermore, the material of the regenerated layer 04 is at least one of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, preferably one of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN, or any combination thereof. In another embodiment, the material of the regenerated layer 04 is not intentionally doped with ions and is different from the material of the first type epitaxial layer or the material of the second type epitaxial layer 02.

[0331] The resistance of the regenerated layer 04 is higher than that of the light-emitting layer 03, and the regenerated layer 04 is non-conductive, thereby ensuring the normal operation of the micro-LED structure and preventing carriers from diffusing outside the light-emitting layer 03. Preferably, the band gap of the regenerated layer 04 is larger than that of the light-emitting layer 03. Furthermore, the thickness of the regenerated layer 04 is smaller than that of the light-emitting layer 03; preferably, the thickness of the regenerated layer 04 is no greater than 100 nm.

[0332] Figure 45 This is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., the fifth embodiment).

[0333] Reference Figure 45A dielectric layer 05 is further formed in the space between adjacent mesa structures. Preferably, the dielectric layer 05 fills the space between adjacent mesa structures. The dielectric layer 05 is preferably transparent and electrically insulating. Preferably, the material of the dielectric layer 05 is selected from one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2 and / or ZrO2.

[0334] A top contact 09 is formed on the top of the mesa structure, and a top conductive layer 08 is formed on the top contact 09 and the top of the mesa structure. Here, the top conductive layer 08 is continuously formed on the entire micro-LED structure array. Furthermore, when the top of the dielectric layer 05 is lower than the top of the photonic crystal structure, the top conductive layer 08 fills some gaps between adjacent photonic crystal structures; and the bottom of the top contact 09 fills some gaps between adjacent photonic crystal structures. Here, the light emission direction is from bottom to top, therefore the top conductive layer 08 is transparent.

[0335] A bottom contact 06 is formed on the bottom surface of the first type epitaxial layer 02. The conductivity type of this bottom contact is the same as that of the first type epitaxial layer 01; for example, if the first type epitaxial layer 01 is P-type, the bottom contact 06 is also P-type. Furthermore, since light is emitted upwards or downwards from the mesa structure, the diameter of the bottom contact 06 is larger than the diameter of the top contact 09, while the diameter of the top contact 09 can be as small as possible, and the top contact 09 can also be as small as a point on the top surface of the second type epitaxial layer 02. In another embodiment, the diameter of the bottom contact 06 can also be equal to or smaller than the diameter of the top contact 09. A bottom connection structure 07 is formed at the bottom of the bottom contact 06. The bottom connection structure 07 is used to connect to a bottom electrode, such as a contact pad, in the IC backplane 00. Furthermore, the diameter of the bottom connection structure 07 is 20 nm to 1 μm. Preferably, the diameter of the bottom connection structure 07 is 800 nm to 1 μm. Furthermore, the center of the bottom contact 06 is vertically aligned with the center of the top contact 09. Additionally, the materials of the bottom contact 06 and the bottom connection structure 07 are transparent conductive materials, such as ITO or FTO. Alternatively, the materials of the bottom contact 06 and the bottom connection structure 07 may not be transparent. The materials of the bottom contact 06 and the bottom connection structure 07 may be conductive metals. Preferably, the material of the bottom contact 06 may be at least one selected from Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt. The material of the bottom connection structure 07 may be at least one selected from Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt.

[0336] In some embodiments, the center of the bottom contact 06 is vertically aligned with the center of the first type epitaxial layer 01. However, in another embodiment, the center of the bottom contact 06 is not vertically aligned with the center of the first type epitaxial layer 01.

[0337] In this second embodiment, the manufacturing method of the aforementioned micro LED panel includes the following steps.

[0338] Figures 46 to 54 The steps of a method for manufacturing a micro LED panel according to some embodiments (e.g., the second embodiment) are illustrated respectively.

[0339] Reference Figure 46 Step 1 includes providing a semiconductor substrate 00 with an epitaxial structure.

[0340] Here, the epitaxial structure, from top to bottom, includes a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. The semiconductor substrate 00” can be made of materials such as GaN or GaAs. The epitaxial structure is grown on this substrate 00”.

[0341] Reference Figure 47 Step 2 includes forming a bottom contact 06 on the top of the epitaxial structure.

[0342] Here, bottom contacts 06 are deposited on top of the second type epitaxial layer 02 using a conventional physical vapor deposition method, with other areas protected by a mask, and then the mask is removed by a conventional wet etching process.

[0343] Reference Figure 48 Step 3 includes forming a table structure through a patterned epitaxial structure.

[0344] Here, the epitaxial structure is etched from top to bottom using a conventional plasma etching method to form mesa structures on the semiconductor substrate 00".

[0345] Reference Figure 49 Step 4 includes forming an array of photonic crystal structures with individual photonic crystal structures, such as 10 in a mesa structure.

[0346] Here, the first type epitaxial layer 01, the light-emitting layer 03, and the second type epitaxial layer 02 are sequentially etched from top to bottom using a plasma etching process, and the etching stops at the top of the semiconductor substrate 00”, thus forming a photonic crystal structure array 10 that extends from top to bottom through the entire mesa structure. Preferably, the etching power is 200W to 800W, and the etching time is 50S to 300S.

[0347] Reference Figure 50 Step 5 includes forming a regenerated layer 04 on the sidewall of the photonic crystal structure.

[0348] Here, during the regrowth process, the temperature is between 400°C and 1000°C, and the regeneration time is between 5 seconds and 1000 seconds. The material used for the regrowth process is preferably the same as the material of the first type of epitaxial layer and / or the second type of epitaxial layer, but without intentionally doped ions. The regrowth layer is first grown on the sidewalls and top of each photonic crystal structure. Then, the regrowth layer on the top of the photonic crystal structure is removed by conventional chemical mechanical polishing. In some embodiments herein, the regrowth layer fills the gaps between adjacent photonic crystal structures but does not fill the spaces between adjacent mesa structures.

[0349] Reference Figure 51 Step 6 includes forming a dielectric layer 05 on the top of the platform structure and the top of the regenerated layer 04, and making the dielectric layer 05 cover the bottom contact 06.

[0350] Here, a dielectric layer 05 is first deposited on top of the regenerated layer 04 and on top of the photonic crystal structure array using a conventional chemical vapor deposition method, and the dielectric layer 05 covers the bottom contact 06.

[0351] Then, openings are formed in dielectric layer 05 using conventional plasma etching methods to expose bottom contact 06.

[0352] Reference Figure 52 Step 7 includes forming a bottom connection structure 07 on the top of the bottom contact 06.

[0353] Here, a conductive material is deposited into the opening using a physical vapor deposition process to form the bottom connection post. In this embodiment, the conductive material can be a conventional metal.

[0354] Reference Figure 53 Step 8 includes bonding the bottom connection structure 07 to the IC backplane 00 by inverting the semiconductor substrate 00. Then, the semiconductor substrate 00 is removed.

[0355] Here, the semiconductor substrate 00” with the epitaxial structure is first inverted. Then, the bottom connection structure 07 is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00” is removed by a conventional removal process such as laser lift-off.

[0356] Reference Figure 54 Step 9 includes forming a top contact 09 and a top conductive layer 08 on the top of the dielectric layer 05, on the top of the regenerated layer 04, and on the top of the mesa structure.

[0357] Here, a top contact 09 is deposited on top of the second type epitaxial layer 02, with other areas protected by a mask, and then the mask is removed. Then, a top conductive layer 08 is deposited on the second epitaxial layer 02 using a conventional vapor deposition process. Here, the top conductive layer 08 is formed on top of the photonic crystal structure, on top of the dielectric layer 05, and covers the top contact 09.

[0358] In another embodiment, the dielectric layer 05 is formed only on the sidewall of the mesa structure and does not fill the space between adjacent mesa structures, so the top conductive layer 08 is further formed in the space between adjacent mesa structures.

[0359] Sixth Embodiment

[0360] Figure 55 This is a cross-sectional structural diagram of a micro LED panel according to some embodiments of the present disclosure (e.g., the sixth embodiment).

[0361] Reference Figure 55 The sixth embodiment differs from the fifth embodiment as follows: the space between adjacent platform structures is filled with a regeneration layer 04. Other details of the micro-LED panel can be found in the fifth embodiment and will not be repeated here.

[0362] The manufacturing method of the aforementioned micro-LED panel in this sixth embodiment includes the following steps:

[0363] Step 1, providing a semiconductor substrate 00 with an epitaxial structure; Step 2, forming a bottom contact 06 on the top of the epitaxial structure; Step 3, forming a mesa structure by patterning the epitaxial structure; Step 4, forming an array of photonic crystal structures, such as 10, with individual photonic crystal structures in the mesa structure.

[0364] In some embodiments, the details of steps 1 to 4 may refer to steps 1 to 4 of the fifth embodiment, which will not be described here.

[0365] Reference Figure 56 Step 5 includes forming a regeneration layer 04 in the space between adjacent mesa structures, on the sidewalls and top of each photonic crystal structure, and covering the bottom contact 06 with the regeneration layer 04.

[0366] Here, the regenerated layer 04 is first grown on the sidewalls and top of each photonic crystal structure. Then, the top surface of the regenerated layer 04 is planarized using conventional chemical mechanical polishing. In some embodiments, the regenerated layer 04 fills the gaps between adjacent photonic crystal structures and the spaces between adjacent mesa structures. Furthermore, the top surface of the regenerated layer is higher than the top surface of the photonic crystal structure array and the top surface of the bottom contact 06.

[0367] During this regrowth process, the temperature is between 400°C and 1000°C, and the regeneration time is between 5 seconds and 1000 seconds. Here, the material used for the regrowth process is preferably the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentionally doped ions.

[0368] Reference Figure 57 Step 6 includes forming a bottom connection structure 07 on the top of the bottom contact 06.

[0369] Here, before forming the bottom connection structure 07, an opening is formed in the regenerated layer 04 using a conventional plasma etching method to expose the bottom contact 06.

[0370] Then, a conductive material is deposited into the opening using a physical vapor deposition process to form the bottom connection structure 07. In this embodiment, the conductive material can be a conventional metal. Here, the bottom connection structure 07 is columnar.

[0371] Reference Figure 58 Step 7 includes bonding the bottom connection structure 07 to the IC backplane 00 by inverting the semiconductor substrate 00. Then, the semiconductor substrate 00 is removed.

[0372] Here, the semiconductor substrate 00” with the epitaxial structure is first inverted. Then, the bottom connection structure 07 is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00” is removed by a conventional removal process such as laser lift-off.

[0373] Reference Figure 59 Step 8 includes forming a top contact 09 and a top conductive layer 08 on the top of the regenerated layer 04 and the top of the mesa structure.

[0374] Here, a top contact 09 is deposited on top of the second type epitaxial layer 02, with other areas protected by a mask, and then the mask is removed. Then, a top conductive layer 08 is deposited on the second epitaxial layer 02 using a conventional vapor deposition process. Here, the top conductive layer 08 is formed on top of the photonic crystal structure, on top of the regenerated layer 04, and covers the top contact 09.

[0375] Those skilled in the art should understand that microdisplay panels are not limited to the above-described structure and may include more or fewer components than those illustrated, or may combine some components, or may use different components.

[0376] Those skilled in the art will understand that all or part of the steps used to implement the foregoing embodiments can be implemented by hardware, or by a program that instructs the relevant hardware. This program can be stored in flash memory, conventional computer equipment, a central processing module, a control module, etc.

[0377] The above description is merely an embodiment of this disclosure, and this disclosure is not limited thereto. Modifications, equivalent substitutions, and improvements made without departing from the concepts and principles of this disclosure will fall within the protection scope of this disclosure.

[0378] Other embodiments also include, for example, including, Figures 1 to 59 The embodiments shown are subsets of the above embodiments combined or rearranged in various other embodiments.

[0379] While the detailed description contains many details, these should not be construed as limiting the scope of the invention, but merely as illustrating different examples and aspects of the invention. It should be understood that the scope of the invention includes other embodiments not discussed in detail above. For example, the methods described above can be applied to the integration of non-LED and OLED functional devices with control circuitry that is not pixel driver. Examples of non-LED devices include vertical-cavity surface-emitting lasers (VCSELs), photodetectors, microelectromechanical systems (MEMS), silicon photonic devices, power electronic devices, and distributed feedback lasers (DFBs). Examples of other control circuitry include current drivers, voltage drivers, transimpedance amplifiers, and logic circuits.

[0380] The foregoing description of the disclosed embodiments is provided to enable making or using the embodiments and variations thereof described herein. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments without departing from the spirit or scope of the subject matter disclosed herein. Therefore, this disclosure is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the following claims and the principles and novel features disclosed herein.

[0381] The features of this invention can be implemented using a computer program product or with the aid of a computer program product, such as a storage medium (of various media) or a computer-readable storage medium (of various media), wherein instructions are stored thereon or thereon, which can be used to program a processing system to perform any of the features presented herein. The storage medium may include, but is not limited to, high-speed random access memory, such as DRAM, SRAM, DDRRAM, or other random access solid-state memory devices, and may include non-volatile memory, such as one or more disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid-state memory devices. The memory may optionally include one or more storage devices located remotely from the CPU. The non-volatile memory devices within the memory or optionally the memory include non-transitory computer-readable storage media.

[0382] Features of the invention, stored on any machine-readable medium (of various kinds), can be contained in software and / or firmware for controlling the hardware of a processing system and enabling the processing system to interact with other entities using the results of the invention. Such software or firmware may include, but is not limited to, application code, device drivers, operating systems, and execution environments / containers.

[0383] It should be understood that although the terms “first,” “second,” etc., may be used in this document to describe various elements or steps, these elements or steps should not be limited by these terms. These terms are only used to distinguish one element or step from another.

[0384] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the claims. As used in the description of the embodiments and the appended claims, the singular forms “a,” “an,” and “this” are intended to include multiple forms as well, unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any and all possible combinations of one or more of the associated listed items. It should also be understood that the terms “comprising” and / or “including”, when used in this specification, specify the presence of said features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups.

[0385] As used herein, the term "if" can be interpreted as meaning, depending on the context, that the prerequisite of a statement is true "in the case of," "when," or "in response to detection." Similarly, the phrases "if it is determined that [the prerequisite of that statement is true]," "if [the prerequisite of the statement is true]," or "when [the prerequisite of the statement is true]" can be interpreted as meaning, depending on the context, that the stated prerequisite is true "when determined," "in response to determined," "according to determined," "when detected," or "in response to detection."

[0386] The foregoing description, used for illustration, has been described with reference to specific embodiments. However, the foregoing illustrative discussion is not intended to be exhaustive or to limit the claims to the precise forms disclosed. Many modifications and variations can be made in light of the foregoing teachings. The embodiments were chosen and described in order to best explain the principles of practical application and operation, thereby enabling others skilled in the art to best utilize the invention and its various embodiments.

Claims

1. A microLED panel comprising a microLED array, comprising a plurality of microLED structures, wherein each of the plurality of microLED structures comprises: The mesa structure, from bottom to top, includes: a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; An array of photonic crystal structures comprising multiple photonic crystal structures, each of which extends from top to bottom through the mesa structure, and gaps exist between adjacent photonic crystal structures; and... A regenerated layer is formed on at least a portion of the sidewall of the platform structure. in: The material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN, such that the resistance of the regenerated layer is higher than that of the light-emitting layer, and it is not conductive relative to the light-emitting layer. The material of the regenerated layer is lattice-matched with the light-emitting layer, the first type of epitaxial layer and / or the second type of epitaxial layer, and the material of the regenerated layer is a single crystal.

2. The micro LED panel according to claim 1, wherein the plurality of photonic crystal structures includes a central photonic crystal structure, and each of the remaining photonic crystal structures of the plurality of photonic crystal structures is formed around the central photonic crystal structure.

3. The micro LED panel according to claim 2, wherein: Each of the plurality of micro-LED structures further includes a top contact formed on top of the central photonic crystal structure; and; The diameter of the central photonic crystal structure is larger than the diameter of each of the other photonic crystal structures.

4. The micro LED panel according to any one of claims 1 and 2, wherein: The tops of the plurality of photonic crystal structures are aligned with the top of the mesa structure; and The bottom of the plurality of photonic crystal structures is aligned with the bottom of the mesa structure.

5. The micro LED panel according to any one of claims 1 and 2, wherein: Each photonic crystal structure is a one-dimensional nanostructure; The one-dimensional nanostructure is formed perpendicular to the light-emitting layer and along the light-emitting direction of the mesa structure; and Multiple one-dimensional nanostructures are distributed in the photonic crystal structure array.

6. The micro LED panel according to claim 5, wherein: The diameter of the one-dimensional nanostructure is less than or equal to 1000 nm; and The width of the platform structure is less than or equal to 3 μm.

7. The micro LED panel of claim 1, wherein the dielectric layer completely fills the gaps between adjacent photonic crystal structures of the plurality of photonic crystal structures.

8. The micro LED panel of claim 7, wherein the dielectric layer is further formed on the sidewall of the mesa structure.

9. The micro LED panel of claim 7, wherein the dielectric layer is transparent and electrically insulating.

10. The micro LED panel according to any one of claims 1 and 2, wherein the light-emitting layer comprises a plurality of stacked quantum well pairs.

11. The micro LED panel according to any one of claims 1 and 2, wherein the cross-section of the light-emitting layer has a straight, unbent shape.

12. The micro LED panel according to any one of claims 1 and 2, wherein: The material of the first type of epitaxial layer is single crystal; and The material of the second type of epitaxial layer is a single crystal.

13. The micro LED panel according to any one of claims 1 and 2, wherein: Top contacts are formed above and electrically connected to the top of the platform structure; and A top conductive layer is formed on the top contact and on top of the mezzanine structure.

14. The micro LED panel of claim 13, wherein the top conductive layer is transparent.

15. The microLED panel of claim 1, wherein a space is formed between adjacent microLED structures in the plurality of microLED structures.

16. The micro LED panel according to claim 15, wherein: A bottom contact layer is formed at the bottom of the platform structure; and A bottom connection layer is formed at the bottom of the bottom contact layer.

17. The micro LED panel of claim 16, wherein the bottom surface of the space is aligned with the bottom surface of the bottom connecting layer.

18. The micro LED panel of claim 16, wherein the bottom surface of the space is aligned with the top surface of the bottom contact layer.

19. The micro LED panel of claim 15, wherein the dielectric layer completely fills the space.

20. The micro LED panel of claim 13, wherein the top conductive layer is continuously formed on the entire top surface of the micro LED panel.

21. The micro LED panel of claim 13, wherein the top conductive layer covers a portion of the top surface of the mesa structure.

22. The micro LED panel of claim 1, wherein the regeneration layer is formed on at least a portion of the sidewall of the light-emitting layer.

23. The micro LED panel of claim 1, wherein the regeneration layer is formed on the entire sidewall of the light-emitting layer.

24. The micro LED panel of claim 1, wherein the regeneration layer is formed on at least a portion of the sidewall of the first type epitaxial layer, the entire sidewall of the light-emitting layer, and at least a portion of the sidewall of the second type epitaxial layer.

25. The micro LED panel of claim 1, wherein the regeneration layer is further formed on the sidewalls of the plurality of photonic crystal structures.

26. The micro LED panel of claim 1, wherein the regenerated layer completely fills the gaps between adjacent photonic crystal structures in the plurality of photonic crystal structures.

27. The micro LED panel according to claim 1, wherein: Space is formed between adjacent microLED structures in the plurality of microLED structures; and The dielectric layer fills the space.

28. The micro LED panel according to claim 1, wherein: Space is formed between adjacent microLED structures in the plurality of microLED structures; and The regenerated layer completely fills the space.

29. The micro LED panel according to claim 1, wherein the band gap of the regenerated layer is larger than the band gap of the light-emitting layer.

30. The micro LED panel according to claim 1, wherein: The thickness of the regenerated layer is less than the thickness of the light-emitting layer; and The thickness of the regenerated layer is less than or equal to 100 nm.

31. A method for manufacturing a micro LED panel, comprising: A semiconductor substrate with an epitaxial structure is provided, wherein the epitaxial structure includes, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; An array of photonic crystal structures comprising multiple photonic crystal structures is formed by etching the epitaxial structure. Multiple spaces are formed by etching the photonic crystal structure array, and adjacent spaces in the multiple spaces define a mesa structure. A regenerated layer is formed on the sidewalls of the plurality of photonic crystal structures; as well as A bottom contact is formed on top of the platform structure; A dielectric layer is formed on top of the photonic crystal structure array and on top of the regenerated layer, and covers the bottom contacts; A bottom connection structure is formed above the bottom contact point; The bottom connection structure is bonded to the IC backplane, the semiconductor substrate is inverted, and the semiconductor substrate is removed. as well as A top contact and a top conductive layer are formed on top of the platform structure. in: The material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN, such that the resistance of the regenerated layer is higher than that of the light-emitting layer, and it is not conductive relative to the light-emitting layer. The material of the regenerated layer is lattice-matched with the light-emitting layer, the first type of epitaxial layer and / or the second type of epitaxial layer, and the material of the regenerated layer is a single crystal.

32. A method for manufacturing a micro LED panel, comprising: A semiconductor substrate with an epitaxial structure is provided, wherein the epitaxial structure includes, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; An array of photonic crystal structures comprising multiple photonic crystal structures is formed by etching the epitaxial structure. Multiple spaces are formed by etching the photonic crystal structure array, and adjacent spaces in the multiple spaces define a mesa structure. A regenerated layer is formed on the sidewalls of the plurality of photonic crystal structures, and the regenerated layer fills the space between adjacent mesa structures; A bottom contact is formed on top of the platform structure; A dielectric layer is formed on top of the photonic crystal structure array and on top of the regenerated layer, and covers the bottom contacts; A bottom connection structure is formed above the bottom contact point; The bottom connection structure is bonded to the IC backplane, the semiconductor substrate is inverted, and the semiconductor substrate is removed. as well as A top contact and a top conductive layer are formed on top of the platform structure. in: The material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN, such that the resistance of the regenerated layer is higher than that of the light-emitting layer, and it is not conductive relative to the light-emitting layer. The material of the regenerated layer is lattice-matched with the light-emitting layer, the first type of epitaxial layer and / or the second type of epitaxial layer, and the material of the regenerated layer is a single crystal.

33. A method for manufacturing a micro LED panel, comprising: Provide a semiconductor substrate with an epitaxial structure; The epitaxial structure, from top to bottom, includes a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; A plurality of bottom contacts are formed on the top of the extensional structure; Multiple spaces are formed by etching the epitaxial structure, and adjacent spaces in the multiple spaces define a mesa structure. An array of photonic crystal structures, comprising multiple photonic crystal structures, is formed within the mesa structure by etching the epitaxial structure. A regeneration layer is formed in the space between adjacent mesa structures, on the sidewalls and top of the plurality of photonic crystal structures; A bottom connection structure is formed above the bottom contact point; The bottom connection structure is bonded to the IC backplane, the semiconductor substrate is inverted, and the semiconductor substrate is removed. as well as A top contact and a top conductive layer are formed on top of the platform structure. in: The material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN, such that the resistance of the regenerated layer is higher than that of the light-emitting layer, and it is not conductive relative to the light-emitting layer. The material of the regenerated layer is lattice-matched with the light-emitting layer, the first type of epitaxial layer and / or the second type of epitaxial layer, and the material of the regenerated layer is a single crystal.

34. A method for manufacturing a micro LED panel, comprising: A semiconductor substrate with an epitaxial structure is provided, wherein the epitaxial structure comprises, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; A plurality of bottom contacts are formed on the top of the extensional structure; Multiple spaces are formed by etching the epitaxial structure, and adjacent spaces in the multiple spaces define a mesa structure. An array of photonic crystal structures, comprising multiple photonic crystal structures, is formed within the mesa structure by etching the epitaxial structure. A regenerated layer is formed on the sidewalls of the plurality of photonic crystal structures; as well as A dielectric layer is formed on top of the photonic crystal structure array and on top of the regenerated layer, and covers the bottom contacts; A bottom connection structure is formed above the bottom contact point; The bottom connection structure is bonded to the IC backplane, the semiconductor substrate is inverted, and the semiconductor substrate is removed. as well as A top contact and a top conductive layer are formed on top of the platform structure. in: The material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN, such that the resistance of the regenerated layer is higher than that of the light-emitting layer, and it is not conductive relative to the light-emitting layer. The material of the regenerated layer is lattice-matched with the light-emitting layer, the first type of epitaxial layer and / or the second type of epitaxial layer, and the material of the regenerated layer is a single crystal.

35. The method for manufacturing a micro LED panel according to any one of claims 31 and 34, wherein when the regenerated layer is formed, the regenerated layer completely fills the plurality of spaces.

36. The method for manufacturing a micro LED panel according to any one of claims 33 and 34, wherein, When the photonic crystal structure array is formed, the central photonic crystal structure among the plurality of photonic crystal structures is formed at the bottom of the corresponding bottom contact among the plurality of bottom contacts.

37. The method for manufacturing a micro LED panel according to any one of claims 31-34, wherein: When the dielectric layer is formed, the dielectric layer completely fills the plurality of spaces; and When the top conductive layer is formed, the top conductive layer is formed on top of the dielectric layer.

38. The method for manufacturing a micro LED panel according to any one of claims 31-34, wherein, When the photonic crystal structure array is formed: The tops of the plurality of photonic crystal structures are aligned with the top of the mesa structure; and The bottom of the plurality of photonic crystal structures is aligned with the bottom of the mesa structure.

39. The method for manufacturing a micro LED panel according to any one of claims 31-34, wherein, When forming a photonic crystal structure array: Each of the plurality of photonic crystal structures is a one-dimensional nanostructure. The one-dimensional nanostructure is formed perpendicular to the light-emitting layer and along the light-emitting direction of the mesa structure.

40. The method for manufacturing a micro LED panel according to any one of claims 31-34, wherein, When the top contact and the top conductive layer are formed: The top contact is formed on top of the photonic crystal structure array and electrically connected to at least one of the plurality of photonic crystal structures; and The top conductive layer is formed on the top contact.

41. The method for manufacturing a micro LED panel according to claim 35, wherein, When the regenerated layer is formed, the top surface of the regenerated layer is planarized and is higher than the top surface of the photonic crystal structure array and the top surface of the bottom contact.

42. The method for manufacturing a micro LED panel according to claim 35, wherein, When the bottom connection structure is formed, the bottom connection structure is formed in the regeneration layer.

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