Micro-led panel with regrowth layer and method of manufacturing the same

Abstract

A micro LED panel having a micro LED array and a system and method of manufacturing the micro LED panel are provided. The micro LED array includes at least one micro LED structure. The micro LED structure includes at least: a mesa structure and a regrowth layer (04). The regrowth layer (04) is grown on at least a portion of a sidewall of a first type of epitaxial layer (01) and an entire sidewall of a light emitting layer (03), thereby reducing non-radiative recombination on the sidewall of the mesa structure and improving light emitting efficiency.

Description

Technical Field

[0001] This disclosure generally relates to light-emitting diode (LED) technology, and more specifically to a micro LED panel and a method of manufacturing the micro LED structure. Background Technology

[0002] Display technology is becoming increasingly important in today's commercial electronic devices. These display panels are widely used in fixed large screens, such as LCD TVs and OLED TVs, as well as portable electronic devices, such as laptops, smartphones, tablets, and wearable devices.

[0003] Inorganic micro-light-emitting diodes (LEDs) are becoming increasingly important due to their applications in a wide range of fields, including self-emitting microdisplays, visible light communication, and optogenetics. Micro-LEDs exhibit higher output performance than conventional LEDs due to better strain relaxation, improved light extraction efficiency, and uniform current spreading. Compared to conventional LEDs, micro-LEDs also exhibit improved thermal performance and operate with higher current densities, faster response rates, wider operating temperature ranges, higher resolution, color gamut and contrast, and lower power consumption.

[0004] To achieve higher pixel density, the size of micro-LEDs has been reduced to less than 200 nm. However, the efficiency and carrier lifetime of devices based on micro-LED arrays decrease dramatically with decreasing micro-LED size due to surface recombination caused by top-down etching and poor p-type conduction. The performance of micro-LEDs is also severely affected by the quantum-confined Stark effect, particularly by strain-induced polarization fields, which lead to unstable operation and significant changes in emission wavelength with increasing current. Furthermore, as the diameter of micro-LEDs decreases, numerous surface states and defects are formed at the surface of the micro-LED structure via inductively coupled plasma (ICP) etching, increasing nonradiative recombination at the micro-LED structure surface.

[0005] Furthermore, the emission of conventional micro-LED structures is mainly distributed in any direction, exhibiting poor directional emission and reducing light intensity along the vertical direction. To achieve directional emission in micro-LED structures, additional reflective structures are configured around the mesa and at the bottom of the mesa to reflect the emitted light in the same direction. This leads to complex manufacturing processes and increases the cost of micro-LEDs.

[0006] Furthermore, in devices based on micro-LED arrays, a single micro-LED typically functions as a pixel, such as in a monolithic micro-LED array panel. However, micro-LED structures with smaller diameters exhibit lower external quantum efficiency (EQE), which reduces the luminous efficiency per pixel.

[0007] The above content is only for the purpose of helping to understand the technical solution of this application and does not constitute an admission that the above is prior art. Summary of the Invention

[0008] There is a need for improved display designs that address and mitigate the shortcomings of conventional display systems, such as those mentioned above. In particular, there is a need for display panels with improved efficiency and better image quality.

[0009] To overcome the above-mentioned drawbacks, the present invention provides a micro LED panel to improve luminous efficiency, avoid crosstalk, minimize surface carrier loss, and optimize the sidewall area of ​​the quantum well.

[0010] To achieve the above objectives, some exemplary embodiments of this disclosure provide a microLED panel with a microLED array, comprising: at least one microLED structure, wherein the microLED structure includes at least: a mesa structure, a second type epitaxial layer, and a regenerated layer. The mesa structure includes a first type epitaxial layer and a light-emitting layer from bottom to top. The second type epitaxial layer is continuously formed on top of the light-emitting layer and continuously formed over the entire area of ​​the microLED panel. The regenerated layer is grown on at least a portion of the sidewall of the first type epitaxial layer and the entire sidewall of the light-emitting layer.

[0011] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top of the regenerated layer also protrudes along the top surface of the dielectric layer, and a second type of epitaxial layer is formed on top of the light-emitting layer and on top of the regenerated layer.

[0012] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer on the sidewall of the light-emitting layer is not parallel to the extension direction of the light-emitting layer.

[0013] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the tilt angle of the regenerated layer on the sidewall of the light-emitting layer is 30 to 90 degrees relative to the extension direction of the light-emitting layer; and the regenerated layer protruding along the dielectric layer is parallel to the top surface of the dielectric layer.

[0014] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a regenerated layer protruding from the top of the dielectric layer is connected to an adjacent light-emitting layer and an adjacent first-type epitaxial layer.

[0015] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is also formed on the entire sidewall of the light-emitting layer and the first type of epitaxial layer.

[0016] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is also formed on the bottom surface of the first type of epitaxial layer.

[0017] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the diameter of the mesa structure is no greater than 3 μm.

[0018] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes a top surface, an edge surface, and a bottom surface; and the regeneration layer is grown only on the edge surface of the light-emitting layer, and not on the top and bottom surfaces of the light-emitting layer.

[0019] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes multiple pairs of quantum wells; and the regenerated layer on the sidewall of the light-emitting layer is not parallel to each of the multiple pairs of quantum wells.

[0020] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer has a straight shape without any curvature.

[0021] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer having intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentionally non-intrinsic doped ions.

[0022] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

[0023] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is single crystal, the material of the first epitaxial layer is single crystal, and the material of the second type of epitaxial layer is single crystal.

[0024] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regenerated layer is larger than the band gap of the light-emitting layer.

[0025] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is less than the thickness of the light-emitting layer.

[0026] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is no greater than 100 nm.

[0027] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regenerated layer is higher than the resistance of the light-emitting layer.

[0028] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is non-conductive.

[0029] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the dielectric layer material is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2 and / or ZrO2.

[0030] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP, and the material of the second type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP.

[0031] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising: Step 1: Provide a semiconductor substrate with an epitaxial structure, wherein the epitaxial structure includes, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; Step 2: Form a mesa structure by patterning the first type of epitaxial layer and the light-emitting layer; Step 3: A regenerated layer is formed on the sidewall of the light-emitting layer and on at least a portion of the sidewall of the first type of epitaxial layer by an epitaxial material regeneration process; Step 4: Form a dielectric layer on the regenerated layer, and form an opening in the dielectric layer on the first type epitaxial layer; form a bottom contact in the opening on the surface of the first type epitaxial layer. Step 5: Form the bottom connection structure in the opening; Step 6: Bond the first type epitaxial layer and bottom interconnect structure to the IC backplane by inverting the semiconductor substrate; then, remove the semiconductor substrate; and Step 7: Form a top contact and a top conductive layer on the second type of epitaxial layer.

[0032] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 3, a regenerated layer is further formed on the entire sidewall and top of the first type epitaxial layer; in step 4, an opening is further formed in the regenerated layer on the first type epitaxial layer; and the temperature in the regenerated process is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds.

[0033] In some exemplary embodiments or any combination of exemplary embodiments, the method of manufacturing a micro LED panel further includes: in step 3, forming a mask pattern covering the top and part of the sidewalls of the first type epitaxial layer before forming the regrowth layer; and removing the mask pattern after forming the regrowth layer.

[0034] Some exemplary embodiments of this disclosure provide a miniature LED panel, including: A micro-LED structure array comprising at least two micro-LED structures, wherein each micro-LED structure comprises: A mesa structure, wherein the mesa structure comprises, from bottom to top: a first type epitaxial layer and a light-emitting layer; The second type of epitaxial layer is continuously formed on top of the light-emitting layer and on top of the regenerated layer, and continuously formed over the entire area of ​​the micro-LED panel; and, The regenerated layer grows on the entire sidewall of the first type epitaxial layer and the entire sidewall of the luminescent layer, and completely fills the space between adjacent mesa structures.

[0035] In some exemplary embodiments or any combination of exemplary embodiments of the micro-LED panel, the top width of the regenerated layer is the same as the top width of the gap between adjacent light-emitting layers of adjacent micro-LED structures.

[0036] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the diameter of the mesa structure is no greater than 3 μm.

[0037] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes a top surface, an edge surface, and a bottom surface; and the regeneration layer is grown only on the edge surface of the light-emitting layer, and not on the top and bottom surfaces of the light-emitting layer.

[0038] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes multiple pairs of quantum wells.

[0039] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer has a straight shape without any curvature.

[0040] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer having intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentionally non-intrinsic doped ions.

[0041] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

[0042] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is single crystal, the material of the first epitaxial layer is single crystal, and the material of the second type of epitaxial layer is single crystal.

[0043] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regenerated layer is larger than the band gap of the light-emitting layer.

[0044] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is less than the thickness of the light-emitting layer.

[0045] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is no greater than 100 nm.

[0046] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regenerated layer is higher than the resistance of the light-emitting layer.

[0047] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is non-conductive.

[0048] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP, and the material of the second type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP.

[0049] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a bottom connection structure is formed under the regenerated layer and electrically connected to the first type of epitaxial layer.

[0050] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising: Step 1: Provide a semiconductor substrate with an epitaxial structure, wherein the epitaxial structure includes, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; Step 2: Form a mesa structure by patterning the first type of epitaxial layer and the light-emitting layer; and form a bottom contact on the top of the mesa structure; Step 3: A regenerated layer is formed on the entire sidewall of the light-emitting layer and on the entire sidewall of the first type of epitaxial layer by an epitaxial material regeneration process, and the regenerated layer completely fills the gap between adjacent mesa structures. Step 4: Form an opening in the regrowth layer on the first type of epitaxial layer; Step 5: Form the bottom connection structure in the opening; Step 6: Bond the bottom connection structure to the IC backplane by inverting the semiconductor substrate; then, remove the semiconductor substrate; and Step 7: Form a top contact and a top conductive layer on the second type of epitaxial layer.

[0051] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 3, the temperature in the regeneration process is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds.

[0052] Some exemplary embodiments of this disclosure provide a miniature LED panel, including: A microLED structure array comprising at least one microLED structure, wherein the microLED structure includes: A mesa structure, wherein the mesa structure comprises, from bottom to top: a first type epitaxial layer and a light-emitting layer; The second type of epitaxial layer is continuously formed on top of the light-emitting layer and on top of the regenerated layer, and continuously formed over the entire area of ​​the micro-LED panel; and, The regenerated layer grows on part of the sidewalls of the first type epitaxial layer and the entire sidewalls of the luminescent layer, and fills the space between adjacent mesa structures.

[0053] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the top width of the regenerated layer is the same as the top spacing width between adjacent light-emitting layers.

[0054] In some exemplary embodiments or any combination of exemplary embodiments, the micro-LED panel further includes a dielectric layer formed on the bottom of the regenerated layer.

[0055] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the dielectric layer material is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2 and / or ZrO2.

[0056] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a bottom connection structure is formed in the lower part of the dielectric layer and electrically connected to the first type of epitaxial layer.

[0057] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the diameter of the mesa structure is no greater than 3 μm.

[0058] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes a top surface, an edge surface, and a bottom surface; and the regeneration layer is grown only on the edge surface of the light-emitting layer, and not on the top and bottom surfaces of the light-emitting layer.

[0059] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes multiple pairs of quantum wells.

[0060] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer has a straight shape without any curvature.

[0061] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer having intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentionally non-intrinsic doped ions.

[0062] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

[0063] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is single crystal, the material of the first epitaxial layer is single crystal, and the material of the second type of epitaxial layer is single crystal.

[0064] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regenerated layer is larger than the band gap of the light-emitting layer.

[0065] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is less than the thickness of the light-emitting layer.

[0066] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is no greater than 100 nm.

[0067] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regenerated layer is higher than the resistance of the light-emitting layer.

[0068] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is non-conductive.

[0069] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP, and the material of the second type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP.

[0070] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising: Step 1: Provide a semiconductor substrate with an epitaxial structure, wherein the epitaxial structure includes, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; Step 2: Form a mesa structure by patterning the first type of epitaxial layer and the light-emitting layer; Step 3: A regenerated layer is formed on the entire sidewall of the light-emitting layer and on a portion of the sidewall of the first type of epitaxial layer using an epitaxial material regeneration process. Step 4: Form a dielectric layer on the regenerated layer and form an opening in the dielectric layer on the first type of epitaxial layer; And a bottom contact is formed in an opening on the surface of the first type epitaxial layer; Step 5: Form the bottom connection structure in the opening; Step 6: Bond the bottom connection structure to the IC backplane by inverting the semiconductor substrate; then, remove the semiconductor substrate; and Step 7: Form a top contact and a top conductive layer on the second type of epitaxial layer.

[0071] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 3, the temperature in the regeneration process is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds.

[0072] Some exemplary embodiments of this disclosure provide a micro LED panel, including: a micro LED structure array comprising at least one micro LED structure, wherein the micro LED structure comprises: A mesa structure, comprising, from bottom to top: a first type epitaxial layer, a light-emitting layer, and a second type epitaxial layer; and a regeneration layer grown on at least a portion of the sidewall of the first type epitaxial layer and the entire sidewall of the light-emitting layer.

[0073] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is formed between adjacent mesa structures, and the top of the regenerated layer also protrudes into the dielectric layer.

[0074] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer protruding into the dielectric layer is connected to the adjacent light-emitting layer and the adjacent first-type epitaxial layer.

[0075] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regeneration layer is grown on the entire sidewall of the light-emitting layer and the entire sidewall of the first type of epitaxial layer.

[0076] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer on the sidewall of the light-emitting layer is not parallel to the extension direction of the light-emitting layer.

[0077] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the tilt angle of the regenerated layer on the sidewall of the light-emitting layer is 30 to 90 degrees relative to the extension direction of the light-emitting layer; the regenerated layer protruding into the dielectric layer is parallel to the bottom surface of the second type epitaxial layer.

[0078] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the diameter of the mesa structure is no greater than 3 μm.

[0079] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes a top surface, an edge surface, and a bottom surface; and the regeneration layer is grown only on the edge surface of the light-emitting layer, and not on the top and bottom surfaces of the light-emitting layer.

[0080] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer includes multiple pairs of quantum wells; and the regenerated layer on the sidewall of the light-emitting layer is not parallel to each of the multiple pairs of quantum wells.

[0081] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the light-emitting layer has a straight shape without any curvature.

[0082] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer having intrinsic doped ions is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentionally non-intrinsic doped ions.

[0083] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

[0084] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the regenerated layer is single crystal, the material of the first epitaxial layer is single crystal, and the material of the second type of epitaxial layer is single crystal.

[0085] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the band gap of the regenerated layer is larger than the band gap of the light-emitting layer.

[0086] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is less than the thickness of the light-emitting layer.

[0087] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the thickness of the regenerated layer is no greater than 100 nm.

[0088] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the resistance of the regenerated layer is higher than the resistance of the light-emitting layer.

[0089] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the regenerated layer is non-conductive.

[0090] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, a dielectric layer is formed on the surface of the regenerated layer between adjacent mesa structures.

[0091] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the dielectric layer material is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2 and / or ZrO2.

[0092] In some exemplary embodiments or any combination of exemplary embodiments of the micro LED panel, the material of the first type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP, and the material of the second type of epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP.

[0093] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising: Step 1: Provide a semiconductor substrate with an epitaxial structure, wherein the epitaxial structure includes, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; Step 2: Form a platform structure through patterned extensional structures; Step 3: Form a first mask pattern on the semiconductor substrate to cover the sidewalls of the first type epitaxial layer and the sidewalls of the light-emitting layer; Step 4: Deposit a first dielectric layer on the substrate between adjacent mesa structures, with the top of the first dielectric layer aligned with the bottom of the light-emitting layer; Step 5: Remove the first mask pattern; Step 6: A regenerated layer is formed on the entire sidewall of the light-emitting layer and on at least a portion of the sidewall of the first type of epitaxial layer by an epitaxial material regeneration process. Step 7: Form a second dielectric layer on the regenerated layer and form an opening on the first type epitaxial layer; fill the opening with a bottom contact. Step 8: Form the bottom connection structure in the opening; Step 9: Bond the first type epitaxial layer and bottom interconnect structure to the IC backplane by inverting the semiconductor substrate; then, remove the semiconductor substrate; and Step 10: Form a top contact and a top conductive layer on the second type of epitaxial layer.

[0094] In some exemplary embodiments or any combination of exemplary embodiments, the method of manufacturing a micro LED panel further includes: in step 6, before forming the regrowth layer, forming a second mask pattern covering the top and a portion of the sidewalls of the first type epitaxial layer, wherein the regrowth layer is formed on the entire sidewall of the light-emitting layer and a portion of the sidewalls of the first type epitaxial layer; and after forming the regrowth layer, removing the second mask pattern.

[0095] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, wherein in step 6, the regenerated layer is formed directly on the entire sidewall of the light-emitting layer, the entire sidewall of the first type epitaxial layer, and the top of the first type epitaxial layer.

[0096] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 6, the temperature in the regeneration process is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds.

[0097] Some exemplary embodiments of this disclosure provide a method for manufacturing a micro LED panel, the method comprising: Step 1: Provide a semiconductor substrate with an epitaxial structure, wherein the epitaxial structure includes, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; Step 2: Form a platform structure through patterned extensional structures; Step 3: Form a first mask pattern on a semiconductor substrate to cover the sidewalls of the second type epitaxial layer, wherein the top of the first mask pattern is not higher than the bottom of the light-emitting layer; Step 4: A regenerated layer is formed on the sidewall of the light-emitting layer and on at least a portion of the sidewall of the first type of epitaxial layer by an epitaxial material regeneration process; Step 5: Form a first dielectric layer on the regenerated layer, form an opening on the first type epitaxial layer, and fill the opening with the bottom contact. Step 8: Form the bottom connection structure in the opening; Step 9: Bond the first type epitaxial layer and bottom connection structure to the IC backplane by inverting the semiconductor substrate; then, remove the semiconductor substrate. Step 10: Form a second dielectric layer on the regrowth layer between adjacent mesa structures; and Step 11: Form a top contact and a top conductive layer on the second type of epitaxial layer.

[0098] In some exemplary embodiments or any combination of exemplary embodiments, the method of manufacturing a micro LED panel further includes: in step 4, before forming the regrowth layer, forming a second mask pattern covering the top and a portion of the sidewalls of the first type epitaxial layer, wherein the regrowth layer is formed on the entire sidewall of the light-emitting layer and a portion of the sidewalls of the first type epitaxial layer; and after forming the regrowth layer, removing the mask pattern.

[0099] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, the material of the first mask pattern is different from the material of the second mask pattern.

[0100] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, a regenerated layer is directly formed on the entire sidewall of the light-emitting layer, on the entire sidewall of the first type epitaxial layer, and on top of the first type epitaxial layer.

[0101] In some exemplary embodiments or any combination of exemplary embodiments of the method for manufacturing a micro LED panel, in step 4, the temperature in the regeneration process is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds.

[0102] The micro-LED panel disclosed herein avoids non-radiative recombination at the sidewalls of the micro-LED structure. Furthermore, compared to conventional micro-LEDs, the micro-LED structure of this disclosure exhibits high directional emission without other reflective structures, thereby simplifying the micro-LED structure and reducing costs. Additionally, this disclosure can suppress non-radiative recombination at the surface of the micro-LED structure, thereby improving image quality and increasing the EQE of pixels.

[0103] Note that the various embodiments described above can be combined with any other embodiments described herein. The features and advantages described in the specification are not exhaustive, and in particular, many additional features and advantages will be apparent to those skilled in the art from the accompanying drawings, specification, and claims. Furthermore, it should be noted that the language used in the specification has been chosen primarily for readability and instruction purposes and is not intended to define or limit the subject matter of the invention. Attached Figure Description

[0104] To gain a more detailed understanding of this disclosure, reference can be made to the features of various embodiments, some of which are illustrated in the accompanying drawings. However, the drawings only illustrate relevant features of this disclosure and should not be considered limiting, as the specification may allow for other valid features.

[0105] For convenience, "up" is used to indicate the substrate away from the light-emitting structure shown in the figure, "down" indicates the direction towards the substrate, and other directional terms such as top, bottom, above, below, under, and below are explained accordingly.

[0106] Figure 1 This is a cross-sectional view of a micro LED panel according to some embodiments of the present disclosure (e.g., Embodiment 1).

[0107] Figures 2 to 10 The illustrations depict methods for manufacturing according to some embodiments of the present disclosure (e.g., Embodiment 1). Figure 1 The steps of the method for using a micro LED panel.

[0108] Figure 11 This is a cross-sectional structural diagram of a micro-LED structure according to some embodiments of the present invention (e.g., embodiment 2).

[0109] Figures 12 to 19 The illustrations depict methods for manufacturing according to some embodiments of the present invention (e.g., embodiment 2). Figure 16 The steps of the method for constructing a micro LED structure.

[0110] Figure 20 This is a cross-sectional structural diagram of a micro-LED structure according to some embodiments of the present invention (e.g., embodiment 3).

[0111] Figures 21 to 27 The illustrations depict manufacturing processes according to some embodiments of the present disclosure (e.g., embodiment 3). Figure 20 The steps of the method for constructing a micro LED structure.

[0112] Figure 28 This is a cross-sectional structural diagram of a micro-LED structure according to some embodiments of the present invention (e.g., embodiment 4).

[0113] Figures 29 to 39 The illustration shows the process of manufacturing. Figure 28 The steps of the method for constructing a micro LED structure.

[0114] Figure 40 This is an alternative step 6 cross-sectional structure according to Embodiment 4 of the present invention.

[0115] Figure 41 This is a cross-sectional view of another micro-LED structure according to some embodiments of the present invention (e.g., alternative embodiment 4).

[0116] Figures 42 to 50 The illustration shows the process of manufacturing. Figure 28 The steps of another alternative method for micro-LED structures.

[0117] By convention, various features shown in the accompanying drawings may not be drawn to scale. Therefore, for clarity, the dimensions of various features may be arbitrarily enlarged or reduced. Additionally, some drawings may not depict all components of a given system, method, or apparatus. Finally, the same reference numerals may be used to denote the same features throughout the specification and drawings. Detailed Implementation

[0118] Numerous details are described herein to provide a thorough understanding of the exemplary embodiments illustrated in the accompanying drawings. However, some embodiments may be practiced without many specific details, and the scope of the claims is limited only to those features and aspects specifically set forth in the claims. Furthermore, well-known processes, components, and materials are not described exhaustively so as not to unnecessarily obscure relevant aspects of the embodiments described herein.

[0119] As described above, to address the problems in the related art, in some embodiments, this disclosure discloses a microLED panel comprising multiple microLED structures. The size of the microLED panel is no greater than 1 cm. The microLED structures are formed in an array within the microLED panel, having resolutions such as 720*480, 640*480, 1920*1080, 1280*720, 2k, or 4k. The diameter of the microLED structures is in the nanometer range, such as 20 nm to 100 nm.

[0120] Figure 1 This is a cross-sectional view of a micro-LED structure according to some embodiments of the present invention. (Refer to...) Figure 1 The micro-LED structure is formed from bottom to top by a first-type epitaxial layer 01, a light-emitting layer 03, and a second-type epitaxial layer 02. The first and second types are different conductivity types; for example, the first type is P-type, and the second type is N-type. In another example, the first type is N-type, and the second type is P-type. In some embodiments, the material of the first type epitaxial layer 01 may be one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN and / or InN, or any combination thereof, preferably one or more of p-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP, or any combination thereof. The material of the second type epitaxial layer 02 may be one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN and / or InN, or any combination thereof, preferably one or more of n-type GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP, or any combination thereof.

[0121] In some embodiments, the light-emitting layer 03 is formed of multiple pairs of quantum well layers. The material of the quantum well layers can be one of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, etc. Furthermore, the thickness of the first type epitaxial layer 01 is greater than the thickness of the second type epitaxial layer 02, and the thickness of the light-emitting layer 03 is less than the thickness of the first type epitaxial layer 01. Preferably, the thickness of the first type epitaxial layer 01 is 700 nm to 2 μm, and the thickness of the second type epitaxial layer 02 is 100 nm to 200 nm. Preferably, the thickness of a single quantum well layer is no greater than 30 nm. In some examples, the light-emitting layer 03 includes no more than three pairs of quantum well layers.

[0122] In some embodiments, the first type epitaxial layer 01 may have multiple stacked first type semiconductor sublayers, and the second type epitaxial layer 02 may have multiple stacked second type semiconductor sublayers. For example, the top layer of the first type epitaxial sublayer is a P capping layer connected to the bottom of the light-emitting layer 03, and the bottom layer of the second type epitaxial sublayer is an N capping layer connected to the top of the light-emitting layer 03, for protecting the quantum well layer from damage.

[0123] Furthermore, the first type of epitaxial layer 01 includes one or more mirror layers 011. Figure 1 (Not shown in the diagram). The mirror layer 011 can be formed on the bottom surface of the first type epitaxial layer 01 or inside the first type epitaxial layer 01. The material of the mirror layer is a combination of dielectric and metallic materials. Furthermore, the dielectric material is SiO2 or SiNx, where x is a positive integer; preferably, the metallic material is Au or Ag. In some embodiments, multiple mirror layers 011 are horizontally formed one after another in the first type epitaxial layer 01 at different horizontal height positions, thereby dividing the first type epitaxial layer 01 into multiple layers.

[0124] In some embodiments, a top contact 09 is formed on the top surface of the second-type epitaxial layer 02. The conductivity type of the top contact 09 is the same as that of the second-type epitaxial layer 02; for example, if the second type is n-type, the top contact 09 is an n-type top contact; or, if the second type is p-type, the top contact 09 is a p-type top contact. In some embodiments, the top contact 09 is made of metal or a metal alloy, such as AuGe, AuGeNi, etc. The top contact 09 is used to form an ohmic contact between the top conductive layer 08 and the second-type epitaxial layer 02 to optimize the electrical characteristics of the micro-LED. The diameter of the top contact 09 is approximately 20 nm to 50 nm, and the thickness of the top contact 09 is approximately 10 nm to 20 nm. In some embodiments, the top conductive layer 08 is transparent and conductive, such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO), etc.

[0125] In some embodiments, a bottom contact 06 is formed on the bottom surface of the first type epitaxial layer 01. The conductivity type of the bottom contact 06 is the same as that of the first type epitaxial layer 01; for example, if the first type epitaxial layer 01 is P-type, the bottom contact 06 is also P-type. Furthermore, since light is emitted upwards or downwards from an LED mesa structure composed of or including the first type epitaxial layer 01 and the light-emitting layer 03, the diameter of the bottom contact 06 is larger than the diameter of the top contact 09, while the diameter of the top contact 09 can be as small as possible. Therefore, the top contact 09 also serves as a point on the top surface of the second type epitaxial layer 02. For example, the width of the top contact 09 is less than 1 / 5, 1 / 6, 1 / 10, or 1 / 20 of the width of the second type epitaxial layer 02. In some embodiments, the diameter of the bottom contact 06 may also be equal to or smaller than the diameter of the top contact 09. A bottom connection structure 07 is formed at the bottom of the bottom contact 06. The bottom connection structure 07 is used to connect to a bottom electrode, such as a contact pad, in an IC backplane. Furthermore, the diameter of the bottom connection structure 07 is from 20 nm to 1 μm. Preferably, the diameter of the bottom connection structure 07 is from 800 nm to 1 μm. Additionally, the center of the bottom contact 06 is aligned vertically with the center of the top contact 09. In some embodiments, the materials of the bottom contact 06 and the bottom connection structure 07 are transparent conductive materials, such as ITO or FTO. Alternatively, in some embodiments, the materials of the bottom contact 06 and the bottom connection structure 07 are not transparent. The materials of the bottom contact 06 and the bottom connection structure 07 can be conductive metals. Preferably, the material of the bottom contact 06 can be at least one selected from Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt. The material of the bottom connection structure 07 can be at least one selected from Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt.

[0126] like Figure 1 As shown, in some embodiments, the center of the bottom contact 06 is vertically aligned with the center of the first type epitaxial layer 01. However, in another embodiment, the center of the bottom contact 06 is not vertically aligned with the center of the first type epitaxial layer 01.

[0127] In some embodiments, to avoid nonradiative recombination and surface carrier loss at the sidewalls of the mesa structure, a regenerated layer 04 is formed on the sidewalls of the light-emitting layer 03, and even on the sidewalls of the first type epitaxial layer 01 and the second type epitaxial layer 02, by a regeneration process. For example, the regenerated layer can be grown on a portion of the sidewalls of the light-emitting layer 03 or on the entire sidewalls of the light-emitting layer. "Integral" means substantially or entirely. Furthermore, the regenerated layer 04 can also be formed on a portion of the first type epitaxial layer 01 or on the entire sidewall of the first type epitaxial layer 01; and / or, the regenerated layer 04 can also be formed on a portion of the second type epitaxial layer 02 or on the entire sidewall of the second type epitaxial layer 02.

[0128] The regenerated layer 04 on the sidewall of the luminescent layer 03 is not parallel to the horizontal extension direction of the luminescent layer 03, such as... Figure 1 As shown. Furthermore, the light-emitting layer 03 includes a top surface, an edge surface, and a bottom surface; and the regenerated layer 04 grows only on the edge surface of the light-emitting layer 03, and not on the top and bottom surfaces of the light-emitting layer 03. Preferably, the tilt angle of the regenerated layer 04 on the sidewall of the light-emitting layer is 30° to 90° relative to the horizontal direction of the light-emitting layer 03. That is, the regenerated layer 04 grows on the end face of the light-emitting layer 03, rather than on the top and bottom of the light-emitting layer 03. Additionally, the light-emitting layer 03 includes multiple pairs of quantum wells; the regenerated layer 04 is not parallel to the surface of each of the multiple pairs of quantum wells. Here, the light-emitting layer 03 has a straight line shape without any curvature. Preferably, the diameter of the mesa structure is no greater than 3 μm.

[0129] Here, the material of the regenerated layer 04 with intrinsically doped ions is the same as the material of the first type epitaxial layer 01 and / or the second type epitaxial layer 02, but without intentionally intriguing doped ions. For example, when the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are the same, and the intentional ion doping levels of the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are different, the material of the regenerated layer 04 can be the same as the materials of the underlying first type epitaxial layer 01 and the second type epitaxial layer 02, but without intentionally intriguing doped ions. In another example, when the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are not the same, and the intentional ion doping levels of the materials of the first type epitaxial layer 01 and the second type epitaxial layer 02 are different, the material of the regenerated layer 04 can be the same as the material of the first type epitaxial layer 01 or the second type epitaxial layer 02, but without intentionally intriguing doped ions. The light-emitting layer is the active region of the PN junction formed by the first type epitaxial layer 01 and the second type epitaxial layer 02, and can be considered to be composed of two materials of the first type epitaxial layer 01 and the second type epitaxial layer 02. In some embodiments, the portion of the material of the regenerated layer covering the first type epitaxial layer 01 is the same as the underlying first type epitaxial layer 01, but without any intrinsically intentional doping of the first type epitaxial layer 01, and the portion of the material of the regenerated layer covering the second type epitaxial layer 02 is the same as the underlying second type epitaxial layer 02, but without any intrinsically intentional doping of the second type epitaxial layer 02. In some embodiments, the regenerated layer 04 may have some intrinsic doping level or no doping level. In some embodiments, the material growth parameters, such as ambient / gas pressure, power, and the material used for the regenerated process, are the same as or similar to the material growth parameters of the first type epitaxial layer 01 and / or the second type epitaxial layer 02. The material of the regenerated layer 04 must be lattice-matched with the light-emitting layer 03, the first type epitaxial layer 01, and / or the second type epitaxial layer 02. Preferably, the material of the regenerated layer 04 is a single crystal, the material of the first epitaxial layer 01 is a single crystal, and the material of the second type epitaxial layer 02 is a single crystal. Furthermore, the material of the regenerated layer 04 is selected from one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP, AlGaInP, AlP, InP, AlN, and / or InN, or any combination thereof, preferably one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN, and / or InN, or any combination thereof. In another embodiment, the material of the regenerated layer 04 is not intentionally doped with ions and is different from the material of the first type epitaxial layer or the material of the second type epitaxial layer 02.

[0130] The resistance of the regenerated layer 04 is higher than that of the light-emitting layer 03, and the regenerated layer 04 is non-conductive, thereby ensuring the normal operation of the micro-LED structure and preventing carriers from diffusing outside the light-emitting layer 03. Preferably, the band gap of the regenerated layer 04 is larger than that of the light-emitting layer 03. Furthermore, the thickness of the regenerated layer 04 is smaller than that of the light-emitting layer 03; preferably, the thickness of the regenerated layer 04 is no greater than 10 nm or 100 nm. In another embodiment, the thickness of the regenerated layer 04 is equal to or greater than the thickness of the light-emitting layer 03.

[0131] The details of the micro-LED panel and the manufacturing method of the micro-LED panel will be described below with reference to the accompanying drawings.

[0132] Example 1

[0133] To address the problems in related technologies, a miniature LED panel is provided in the embodiments of the present invention.

[0134] This micro-LED panel includes an array of micro-LED structures. (See reference...) Figure 1 The micro-LED structure in the micro-LED panel includes: a mesa structure including 01 and 03, a regeneration layer 04, a top contact 09, a top conductive layer 08, a bottom contact 06, a bottom connection structure 07, an IC backplate 00, and a dielectric layer 05 between adjacent mesa structures.

[0135] The mesa structure here, from bottom to top, includes a first type epitaxial layer 01 and a light-emitting layer 03, but does not include a second type epitaxial layer 02. The second type epitaxial layer 02 is continuously formed on the top of the entire micro LED panel. In addition, the second type epitaxial layer 02 is continuously formed on top of the light-emitting layer 03 and on top of the regeneration layer 04.

[0136] The regenerated layer 04 is grown on the entire sidewall of the light-emitting layer 03 and the entire sidewall of the first type epitaxial layer 01. Furthermore, the regenerated layer 04 is also formed on the bottom surface of the first type epitaxial layer 01. In some embodiments, the regenerated layer 04 is grown on a portion of the first type epitaxial layer 01 and is not formed on the bottom surface of the first type epitaxial layer 01. Moreover, the regenerated layer 04 is very thin, not exceeding 10 nm, such as 5 nm, and therefore in some embodiments the regenerated layer 04 is transparent.

[0137] A dielectric layer 05 is formed between adjacent mesa structures. Preferably, the dielectric layer 05 is made of one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2. Additionally, in some embodiments, the dielectric layer 05 is made of transparent material. The top of the regenerated layer 04 further protrudes along the top surface of the dielectric layer 05. A second type epitaxial layer 02 is formed on top of the light-emitting layer 03 and the regenerated layer 04. The portion of the regenerated layer 04 protruding along the top of the dielectric layer 05 is parallel to the top surface of the dielectric layer 05. Furthermore, the regenerated layer 04 protruding along the top of the dielectric layer 05 connects to the adjacent light-emitting layer 03 and the adjacent first type epitaxial layer 01. Additionally, a bottom contact 06 and a bottom connection structure 07 are formed in the dielectric layer 05 at the bottom of the first type epitaxial layer 01. A top contact 09 and a top conductive layer 08 are formed on top of the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is continuously formed on the entire micro LED panel. In another embodiment, the top conductive layer 08 is formed on a portion of the top surface of the top contact and the second type epitaxial layer 02.

[0138] In some embodiments, the manufacturing method of the aforementioned micro LED panel in Embodiment 1 includes the following steps:

[0139] Figures 2 to 10 The illustrations show some embodiments of the present disclosure (e.g., Embodiment 1). Figure 1 The steps of the manufacturing method of the micro-LED structure.

[0140] Reference Figure 2 Step 1 includes providing a semiconductor substrate 00' with an epitaxial structure; and the epitaxial structure includes, from top to bottom, a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02.

[0141] Here, the epitaxial structure, from top to bottom, includes a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. The semiconductor substrate 00' can be made of materials such as GaN or GaAs. The epitaxial structure is grown on the substrate 00'.

[0142] Reference Figure 3 Step 2 includes forming a mesa structure by patterning a first type epitaxial layer 01 and a light-emitting layer 03.

[0143] Here, the first type epitaxial layer 01 and the light-emitting layer 03 are etched from top to bottom using a conventional plasma etching process.

[0144] Reference Figure 4 Step 3 includes forming a regenerated layer 04 on at least a portion of the sidewalls of the light-emitting layer 03 and the sidewalls of the first type epitaxial layer 01 by an epitaxial material regeneration process.

[0145] Here, in Figure 4 In this process, the regenerated layer 04 is grown on the sidewalls of the light-emitting layer 03, the sidewalls and top of the first type epitaxial layer 01, and the top surface of the second type epitaxial layer 02. In this regeneration process, the temperature is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds. In some embodiments, the material used in the regeneration process is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentionally intrigued dopant ions.

[0146] In another embodiment, the top and part of the sidewalls of the first type epitaxial layer 01 are covered with a mask. Therefore, the regenerated layer 04 is formed on the entire sidewall of the light-emitting layer 03 and part of the sidewall of the first type epitaxial layer 01.

[0147] In some embodiments, during the etching process in step 2, when the second type epitaxial layer 02 is etched to a certain depth, the regenerated layer 04 can also be formed on a portion of the sidewalls of the second type epitaxial layer 02. Therefore, the position of the regenerated layer 04 is determined by the etching depth in step 2.

[0148] Reference Figures 5 to 7 Step 4 includes forming a dielectric layer 05 on the regenerated layer 04 and forming an opening in the dielectric layer 05 on the first type epitaxial layer 01; and forming a bottom contact 06 in the opening on the surface of the first type epitaxial layer 01.

[0149] Here, firstly, refer to Figure 5 A first opening is formed in the regenerated layer 04 on top of the platform structure. Then, refer to Figure 6 Bottom contact 06 is deposited in the first opening on the first type epitaxial layer 01; next, referring to Figure 7 A dielectric layer 05 is formed on the surface of the regenerated layer 04 and on top of the bottom contact 06; finally, a second opening is formed in the dielectric layer 05 on the first opening to expose the bottom contact 06.

[0150] In some embodiments, the bottom contact 06 may be formed on top of the mesa structure prior to the formation of the regeneration layer 04. Any other steps for forming the dielectric layer 05 and forming the bottom contact 06 in the opening may be used in this method and will be within the scope of this disclosure.

[0151] Reference Figure 8 Step 5 includes forming a bottom connection structure 07 in the opening.

[0152] Here, the material of the bottom connection structure 07 is deposited onto the opening and the bottom contact 06 using a conventional vapor deposition process.

[0153] Reference Figure 9Step 6 includes bonding the first type epitaxial layer 01 and the bottom connection structure 07 to the IC backplane 00 by inverting the semiconductor substrate 00'; then, removing the semiconductor substrate 00'.

[0154] Here, the semiconductor substrate 00' with the epitaxial structure is first inverted. Then, the bottom connection structure 07 is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off.

[0155] Reference Figure 10 Step 7 includes forming a top contact 09 and a top conductive layer 08 on the second type epitaxial layer 02.

[0156] Here, top contact 09 is deposited on top of the second type epitaxial layer 02, with other areas protected by a mask. Then, a top conductive layer 08 is deposited on the second type epitaxial layer 02 using a conventional vapor deposition process.

[0157] Example 2

[0158] The micro-LED panel of Example 2 includes a micro-LED structure array. Figure 11 This is a cross-sectional structural diagram of a micro-LED structure according to some embodiments of the present invention (e.g., Embodiment 2). (Refer to...) Figure 11 The micro LED structure includes: a mesa structure, a continuous second type epitaxial layer 02, a regeneration layer 04, a bottom contact 06, a bottom connection structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08.

[0159] The mesa structure in this embodiment includes a first type epitaxial layer 01 and a light-emitting layer 03 from bottom to top, but does not include a second type epitaxial layer 02. The second type epitaxial layer 02 is continuously formed on the top of the entire micro LED panel. In addition, the second type epitaxial layer 02 is continuously formed on the top of the light-emitting layer 03 and on the top of the regenerated layer 04.

[0160] The regenerated layer 04 is grown on the entire sidewall of the first type epitaxial layer 01 and the entire sidewall of the light-emitting layer 03, and completely fills the space between adjacent mesa structures. That is, the regenerated layer 04 completely fills the gap between adjacent mesa structures. Preferably, the top of the regenerated layer 04 is aligned with the top of the light-emitting layer 03. The bottom of the regenerated layer 04 is lower than the bottom of the light-emitting layer 03. In some embodiments, the bottom of the regenerated layer 04 is lower than the bottom of the mesa structure. Furthermore, the top width of the regenerated layer 04 is the same as the top width of the gap between adjacent light-emitting layers 03. Additionally, the regenerated layer 04 is very thin, not exceeding 10 nm, such as 5 nm, and therefore in some embodiments the regenerated layer 04 is transparent.

[0161] Here, a regenerated layer 04 is formed between adjacent micro-LED structures, wherein no dielectric layer is formed. Bottom contacts 06 and bottom connection structures 07 are formed in the lower portion of the regenerated layer 04 and electrically connected to the first type epitaxial layer 01. Additionally, top contacts 09 and a top conductive layer 08 are formed on top of the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is continuously formed over the entire micro-LED panel. In another embodiment, the top conductive layer 08 is formed on a portion of the top surface of the top contacts 09 and the second type epitaxial layer 02.

[0162] The manufacturing method of the aforementioned micro LED panel in this embodiment 2 includes the following steps.

[0163] Figures 12 to 19 The illustrations show some embodiments of the present disclosure (e.g., embodiment 2). Figure 11 The steps of the manufacturing method of the micro-LED structure.

[0164] Reference Figure 12 Step 1 includes providing a semiconductor substrate 00 with an epitaxial structure. The epitaxial structure includes, from top to bottom, a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02.

[0165] Here, the epitaxial structure, from top to bottom, includes a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. The semiconductor substrate 00' can be made of materials such as GaN or GaAs, and the epitaxial structure is grown on the substrate 00'.

[0166] Reference Figure 13 Step 2 includes forming a mesa structure by patterning a first type epitaxial layer 01 and a light-emitting layer 03, and forming a bottom contact 06 on the top of the mesa structure.

[0167] Here, the first type epitaxial layer 01 and the light-emitting layer 03 are etched from top to bottom using a conventional plasma etching process. The bottom contact 06 is deposited on top of the first type epitaxial layer 01 using a conventional vapor deposition method, wherein other areas are covered using a mask.

[0168] Then, refer to Figure 14 Bottom contact 06 is formed on the top surface of the first type epitaxial layer 01.

[0169] In another embodiment, during the etching process in step 2, when the second type epitaxial layer 02 is etched to a certain depth, the regrowth layer 04 can be further formed on a portion of the sidewall of the second type epitaxial layer. Therefore, the position of the regrowth layer 04 is determined by the etching depth in step 2.

[0170] Reference Figure 15Step 3 includes forming a regenerated layer 04 on the entire sidewall of the light-emitting layer 03 and the entire sidewall of the first type epitaxial layer 01 by an epitaxial material regeneration process, and making the regenerated layer 04 completely fill the gap between adjacent mesa structures.

[0171] Here, the regenerated layer 04 is grown on the sidewalls of the light-emitting layer 03, the sidewalls and top of the first type epitaxial layer 01, and the top surface of the second type epitaxial layer 02. In this regeneration process, the temperature is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds. The material used in the regeneration process is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentionally intrigued dopant ions.

[0172] Reference Figure 16 Step 4 includes forming an opening in the regrowth layer 04 on the first type epitaxial layer 01.

[0173] Here, an opening is formed in the regenerated layer 04 using a conventional plasma etching process.

[0174] Reference Figure 17 Step 5 includes forming a bottom connection structure 07 in the opening.

[0175] Here, before forming the bottom connection structure 07, a bottom contact 06 is formed in an opening on the first type epitaxial layer 01. The material of the bottom connection structure 07 is deposited onto the opening and the bottom contact 06 using a conventional vapor deposition process.

[0176] Reference Figure 18 Step 6 includes bonding the bottom connection structure 07 to the IC backplane 00 by inverting the semiconductor substrate 00', and then removing the semiconductor substrate 00'.

[0177] Here, the semiconductor substrate 00' with the epitaxial structure is first inverted. Then, the bottom connection structure 07 is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off.

[0178] Reference Figure 19 Step 7 includes forming a top contact 09 and a top conductive layer 08 on the second type epitaxial layer 02.

[0179] Here, top contact 09 is deposited on top of the second type epitaxial layer 02, with other areas protected by a mask. Then, a top conductive layer 08 is deposited on the second type epitaxial layer 02 using a conventional vapor deposition process.

[0180] Example 3

[0181] The micro-LED panel of Example 3 includes a micro-LED structure array. Figure 20 This is a cross-sectional structural diagram of a micro-LED structure according to some embodiments of the present invention (e.g., embodiment 3).

[0182] Reference Figure 20 The micro LED structure includes: a mesa structure, a continuous second type epitaxial layer 02, a regeneration layer 04, a bottom contact 06, a bottom connection structure 07, an IC backplane 00, a top contact 09, and a top conductive layer 08.

[0183] In this embodiment, the platform structure, from bottom to top, comprises or includes a first type epitaxial layer 01 and a light-emitting layer 03, but excludes a second type epitaxial layer 02. The second type epitaxial layer 02 is continuously formed on the top of the entire micro-LED panel. Furthermore, the second type epitaxial layer 02 is continuously formed on top of the light-emitting layer 03 and on top of the regenerated layer 04.

[0184] In some embodiments, the regenerated layer 04 is grown on the entire sidewall of the light-emitting layer 03 and a portion of the sidewall of the first type epitaxial layer 01. Furthermore, the regenerated layer 04 completely fills the spaces between adjacent light-emitting layers 03. That is, the regenerated layer 04 completely fills the gaps between adjacent light-emitting layers 03. Preferably, the top of the regenerated layer 04 is aligned with the top of the light-emitting layer 03. The bottom of the regenerated layer 04 is lower than the bottom of the light-emitting layer 03. Furthermore, the top width of the regenerated layer 04 is the same as the width of the top gap between adjacent light-emitting layers 03. Moreover, the regenerated layer 04 is very thin, not exceeding 10 nm, such as 5 nm, and therefore in some embodiments the regenerated layer 04 is transparent.

[0185] In some embodiments, a dielectric layer 05 is formed at the bottom of the regenerated layer 04 between adjacent mesa structures. The dielectric layer 05 is also formed at the bottom of the mesa structure. Bottom contacts 06 and bottom connection structures 07 are formed in the dielectric layer 05 at the bottom of the mesa structure and are electrically connected to the first type epitaxial layer 01. Additionally, in some embodiments, the dielectric layer 05 is made of a transparent material. Preferably, the dielectric layer 05 is made of one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2.

[0186] Additionally, a top contact 09 and a top conductive layer 08 are formed on top of the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is continuously formed over the entire micro-LED panel. In another embodiment, the top conductive layer 08 is formed on a portion of the top surface of the top contact 09 and the second type epitaxial layer 02.

[0187] Reference Figure 20 The manufacturing method of the aforementioned micro LED panel in this embodiment 3 includes the following steps.

[0188] Figures 21 to 27 The illustrations show some embodiments according to this disclosure (e.g., embodiment 3). Figure 20 The steps of the manufacturing method of the micro-LED structure.

[0189] Reference Figure 21 Step 1 includes providing a semiconductor substrate 00' with an epitaxial structure; the epitaxial structure includes, from top to bottom, a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02.

[0190] Here, the epitaxial structure, from top to bottom, includes a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. The semiconductor substrate 00' can be made of materials such as GaN or GaAs, and the epitaxial structure is grown on the substrate 00'.

[0191] Reference Figure 22 Step 2 includes forming a mesa structure by patterning a first type epitaxial layer 01 and a light-emitting layer 03.

[0192] Here, the first type epitaxial layer 01 and the light-emitting layer 03 are etched from top to bottom using a conventional plasma etching process.

[0193] Reference Figure 23 Step 3 includes forming a regenerated layer 04 on the entire sidewall of the light-emitting layer 03 and a portion of the sidewall of the first type epitaxial layer 01 by an epitaxial material regeneration process.

[0194] Here, the regenerated layer 04 is grown on the sidewalls of the light-emitting layer 03, the entire sidewalls and top of the first type epitaxial layer 01, and the top surface of the second type epitaxial layer 02, wherein the top and part of the sidewalls of the first type epitaxial layer 01 are covered by a mask R1. In this regeneration process, the temperature is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds. The material used in the regeneration process is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentionally intrigued dopant ions.

[0195] In some embodiments, during the etching process in step 2, when the second type epitaxial layer 02 is etched to a certain depth, the regenerated layer 04 can be further formed on a portion of the sidewalls of the second type epitaxial layer 02. Therefore, the position of the regenerated layer 04 is determined by the etching depth in step 2.

[0196] Reference Figure 24 Step 4 includes forming a dielectric layer 05 on the regenerated layer 04 and forming an opening in the dielectric layer 05 on the first type epitaxial layer 01, and forming a bottom contact 06 in the opening on the surface of the first type epitaxial layer 01.

[0197] Here, a dielectric layer 05 is first deposited on the regenerated layer 04, on the sidewalls and top of the first type epitaxial layer 01. Then, an opening is formed in the dielectric layer 05 on the first type epitaxial layer 01. Next, a bottom contact 06 is formed in the opening and connected to the first type epitaxial layer 01.

[0198] In some embodiments, step 4 includes the following steps: First, an initial dielectric layer is deposited on the regenerated layer, on the sidewalls and top of the first type epitaxial layer. Then, the top of the initial dielectric layer is planarized to the top of the first type epitaxial layer; and a bottom contact is deposited on the first type epitaxial layer. Then, another dielectric layer is deposited on the initial dielectric layer and on the sidewalls and top of the mesa structure, covering the top contact to form a completed dielectric layer. Next, an opening is formed in the dielectric layer to expose the bottom contact.

[0199] Reference Figure 25 Step 5 includes forming a bottom connection structure 07 in the opening.

[0200] Here, the material of the bottom connection structure 07 is deposited into the opening and the bottom contact point using a conventional vapor deposition process.

[0201] Reference Figure 26 Step 6 includes bonding the bottom connection structure 07 to the IC backplane 00 by inverting the semiconductor substrate 00', and then removing the semiconductor substrate 00'.

[0202] Here, the semiconductor substrate 00' with the epitaxial structure is first inverted. Then, the bottom connection structure 07 is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off.

[0203] Reference Figure 27 Step 7 includes forming a top contact 09 and a top conductive layer 08 on the second type epitaxial layer 02.

[0204] Here, top contact 09 is deposited on top of the second type epitaxial layer 02, with other areas protected by a mask. Then, a top conductive layer 08 is deposited on the second type epitaxial layer 02 using a conventional vapor deposition process.

[0205] Example 4

[0206] The micro-LED panel of Example 4 includes a micro-LED structure array. Figure 28 This is a cross-sectional structural diagram of a micro-LED structure according to some embodiments of the present invention (e.g., embodiment 4).

[0207] Reference Figure 28The micro-LED structure in the micro-LED panel includes: a mesa structure, a regeneration layer 04, a bottom contact 06, a bottom connection structure 07, an IC backplate 00, a top contact 09, and a top conductive layer 08. A dielectric layer 05 is formed between adjacent mesa structures.

[0208] The mesa structure, from bottom to top, comprises or includes: a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. A regenerated layer 04 is grown on the sidewalls of the first type epitaxial layer 01 and the entire sidewalls of the light-emitting layer 03. In some embodiments, the regenerated layer 04 is grown on a portion of the sidewalls of the first type epitaxial layer 01 and the entire sidewalls of the light-emitting layer 03. Furthermore, the regenerated layer 04 is very thin, such as 5 nm, and therefore, in some embodiments, the regenerated layer 04 is transparent.

[0209] In some embodiments, a dielectric layer 05 is formed between adjacent mesa structures. Furthermore, a dielectric layer 05 is formed on the surface of a regenerated layer 04 between adjacent mesa structures. The tip of the regenerated layer 04 further protrudes into the dielectric layer 05. Preferably, the tip of the regenerated layer 04 is connected to an adjacent light-emitting layer 03 and an adjacent first-type epitaxial layer 01. Additionally, the tip of the regenerated layer 04 protruding into the dielectric layer is parallel to the bottom surface of the second-type epitaxial layer 02. Preferably, the material of the dielectric layer 05 is one or more of SiO2, SiNx, Al2O3, AlN, HfO2, TiO2, and / or ZrO2. Additionally, in some embodiments, the material of the dielectric layer 05 is transparent.

[0210] Here, the top of the regenerated layer 04 is aligned with the top of the light-emitting layer 03, and the bottom of the regenerated layer 04 is aligned with the bottom of the first type epitaxial layer 01; furthermore, the regenerated layer 04 is formed at the bottom of the first type epitaxial layer 01. A bottom contact 06 is formed at the bottom of the first type epitaxial layer 01 in the regenerated layer 04; and a bottom connection structure 07 is formed at the bottom of the bottom contact 06 in the dielectric layer 05.

[0211] Additionally, a top contact 09 and a top conductive layer 08 are formed on top of the second type epitaxial layer 02. In some embodiments, the top conductive layer 08 is continuously formed over the entire micro-LED panel. In another embodiment, the top conductive layer 08 is formed on the top contact and a portion of the top surface of the second type epitaxial layer 02.

[0212] The manufacturing method of the micro LED panel described in this embodiment 4 includes the following steps.

[0213] Figures 29 to 39 The diagram shows... Figure 28 The steps of the manufacturing method of the micro-LED structure.

[0214] Reference Figure 29 Step 1 includes providing a semiconductor substrate 00' with an epitaxial structure.

[0215] Here, the epitaxial structure, from top to bottom, includes a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. The semiconductor substrate 00' can be made of materials such as GaN or GaAs, and the epitaxial structure is grown on the semiconductor substrate 00'.

[0216] Reference Figure 30 Step 2 includes forming a table structure by patterning an epitaxial structure.

[0217] Here, the epitaxial structure is etched from top to bottom using a conventional plasma etching process.

[0218] Reference Figure 31 Step 3 includes forming a first mask pattern R1 on the semiconductor substrate 00' to cover the sidewalls of the first type epitaxial layer 01 and the sidewalls of the light-emitting layer 03.

[0219] Here, a first mask pattern R1 is formed using a conventional photolithography process. The first mask pattern R1 is formed to cover the sidewalls of the light-emitting layer 03, the entire sidewalls of the first type epitaxial layer 01, and the top.

[0220] Reference Figure 32 Step 4 includes depositing a first dielectric layer 051 on a semiconductor substrate 00' between adjacent mesa structures, wherein the top of the first dielectric layer 051 is aligned with the bottom of the light-emitting layer 03.

[0221] Here, under the protection of the first mask pattern R1, a first dielectric layer 051 is deposited on the semiconductor substrate 00' and the surface of the sidewall of the second type epitaxial layer 02 by a conventional vapor deposition process. The top of the first dielectric layer 051 is aligned with the bottom of the light-emitting layer 03.

[0222] In some embodiments, the bottom of the first mask pattern R1 is aligned with the bottom of the light-emitting layer 03, so that the dielectric layer 051 is formed on the entire sidewall of the second type epitaxial layer 02, and then the growth layer 04 is formed on the entire sidewall of the light-emitting layer 03 and the sidewall of the first type epitaxial layer 01.

[0223] In another embodiment, the bottom of the first mask pattern R1 is lower than the bottom of the light-emitting layer 03, and therefore the top of the first dielectric layer 051 is lower than the top of the second type epitaxial layer 02. A regrowth layer 04 can then be formed on the sidewalls of the first type epitaxial layer 01, the entire sidewall of the light-emitting layer 03, and a portion of the sidewalls of the second type epitaxial layer 02. Therefore, the position of the regrowth layer 04 is determined by the bottom of the first mask pattern R1.

[0224] Then, the first mask pattern R1 is removed by a chemical etching process.

[0225] Reference Figure 33 Step 5 includes forming a regenerated layer 04 on the entire sidewall of the light-emitting layer 03 and at least a portion of the sidewall of the first type epitaxial layer 01 by an epitaxial material regeneration process.

[0226] Here, the regenerated layer 04 is grown directly on the entire sidewall of the light-emitting layer 03, the top of the first type epitaxial layer 01, and the entire sidewall, and deposited on the top surface of the first dielectric layer 051. In this regeneration process, the temperature is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds. The material used in the regeneration process is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentionally intrigued doped ions. In some embodiments, where the top of the first dielectric layer 051 is lower than the bottom of the light-emitting layer, the regenerated layer 04 is further formed on at least a portion of the sidewall of the second type epitaxial layer 02.

[0227] Figure 40 This is another optional step 6 cross-sectional structure according to embodiment 4 of the present invention.

[0228] Figure 41 This is a cross-sectional view of another microLED structure according to some embodiments of the present invention (e.g., alternative embodiment 4).

[0229] In another embodiment, refer to Figure 40 In step 6, before forming the regrowth layer 04, step 6 further includes: forming a second mask pattern R2 covering the top and part of the sidewalls of the first type epitaxial layer 01; forming the regrowth layer 04 on the entire sidewall of the light-emitting layer 03 and part of the sidewalls of the first type epitaxial layer 01; and removing the second mask pattern R2 after forming the regrowth layer 04. Therefore, referring to... Figure 41 The regenerated layer 04 can be formed on a portion of the first type epitaxial layer 01 and on the entire sidewall of the light-emitting layer 03. Therefore, the position of the regenerated layer 04 is determined by the bottom position of the second mask pattern R2.

[0230] Reference Figure 36 Step 7 includes forming a bottom contact 06 in a regenerated layer 04 on the top surface of the first type epitaxial layer 01, and forming a second dielectric layer 052 on the regenerated layer 04, the second dielectric layer 052 having an opening that exposes the top of the bottom contact 06.

[0231] Here, refer to Figure 34 A first opening is formed in the regenerated layer 04 on the top surface of the first type epitaxial layer 01 by a plasma etching process; then, referring to Figure 35First, a bottom contact 06 is deposited in the opening, wherein a mask is used to cover the area other than the first opening; the bottom contact 06 is connected to the first type epitaxial layer 01, and then the mask is removed; next, refer to Figure 36 A second dielectric layer 052 is deposited on the surface of the regenerated layer 04 using a conventional chemical vapor deposition process; then, another opening is formed in the second dielectric layer 052 to expose the top of the bottom contact 06.

[0232] In another embodiment, step 7 includes: forming a second dielectric layer on the regrowth layer, forming an opening in the second dielectric layer on the first type epitaxial layer; and filling a bottom contact in the opening. Here, the second dielectric layer is deposited on the surface of the regrowth layer using a conventional chemical vapor deposition process; then, an opening is formed in the regrowth layer on top of the second dielectric layer and the first type epitaxial layer; subsequently, a bottom contact is deposited into the opening and connected to the first type epitaxial layer.

[0233] In another embodiment, step 7 includes forming a bottom contact 06 before depositing the regenerated layer 04; then, depositing the regenerated layer 04 on the sidewalls of the light-emitting layer 03, the sidewalls and top of the first type epitaxial layer 01, and the bottom contact 06; next, forming a second dielectric layer 052 on the regenerated layer 04; and finally, forming an opening in the second dielectric layer 052 and the regenerated layer 04 to expose the bottom contact 06.

[0234] Reference Figure 37 Step 8 includes forming a bottom connection structure 07 in the opening.

[0235] Here, the material of the bottom connection structure 07 is deposited into the opening and the bottom contact point using a conventional vapor deposition process.

[0236] Reference Figure 38 Step 9 includes bonding the bottom connection structure 07 to the IC backplane 00 by inverting the semiconductor substrate 00', and then removing the semiconductor substrate 00'.

[0237] Here, the semiconductor substrate 00' with the epitaxial structure is first inverted. Then, the bottom connection structure 07 is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off.

[0238] Reference Figure 39 Step 10 includes forming a top contact 09 and a top conductive layer 08 on the second type epitaxial layer 02.

[0239] Here, top contact 09 is deposited on top of type 2 epitaxial layer 02, where other areas are protected by a mask, and then top conductive layer 08 is deposited on type 2 epitaxial layer 02 by conventional vapor deposition process.

[0240] In some embodiments, here Figure 28 The dielectric layer in the middle is composed of Figure 39 The first dielectric layer 051 and the second dielectric layer 052 are formed in the middle.

[0241] Another method for manufacturing the aforementioned micro-LED panel in Example 4 includes the following steps.

[0242] Figures 42 to 50 The diagram shows... Figure 28 The steps of an alternative manufacturing method for micro-LED structures.

[0243] Reference Figure 42 Step 1 includes providing a semiconductor substrate 00' with an epitaxial structure.

[0244] Here, the epitaxial structure, from top to bottom, includes a first type epitaxial layer 01, a light-emitting layer 03, and a second type epitaxial layer 02. The semiconductor substrate 00' can be made of materials such as GaN or GaAs, and the epitaxial structure is grown on the semiconductor substrate 00'.

[0245] Reference Figure 43 Step 2 includes forming a table structure by patterning an epitaxial structure.

[0246] Here, the epitaxial structure is etched from top to bottom using a conventional plasma etching process.

[0247] Reference Figure 44 Step 3 includes forming a first mask pattern R1 on the semiconductor substrate 00' to cover the sidewalls of the second type epitaxial layer 02. The top of the first mask pattern R1 is not higher than the bottom of the light-emitting layer 03.

[0248] Here, the first mask pattern R1 is formed on the semiconductor substrate 00' using a conventional photolithography process and covers the sidewalls of the second type epitaxial layer 02. The top of the first mask pattern R1 is aligned with the bottom of the light-emitting layer 03. In some embodiments, the top of the first mask pattern R1 is lower than the bottom of the light-emitting layer 03, and the regenerated layer 04 may be formed on a portion of the sidewalls of the second type epitaxial layer 02.

[0249] Reference Figure 45 Step 4 includes forming a regenerated layer 04 on the sidewall of the light-emitting layer 03 and at least a portion of the sidewall of the first epitaxial layer 01 by an epitaxial material regeneration process.

[0250] Here, the regenerated layer 04 is grown directly on the entire sidewall of the light-emitting layer 03, the top of the first type epitaxial layer 01, and the entire sidewall, and is deposited on the top surface of the first mask pattern R1. In this regeneration process, the temperature is 400°C to 1000°C, and the regeneration time is 5 seconds to 1000 seconds. The material used in the regeneration process is the same as the material of the first type epitaxial layer and / or the material of the second type epitaxial layer, but without intentionally intrigued doped ions. In some embodiments, where the top of the first mask layer R1 is lower than the bottom of the light-emitting layer 03, the regenerated layer 04 is also formed on at least a portion of the sidewall of the second type epitaxial layer 02.

[0251] In another embodiment, before the regenerated layer 04 is grown, step 4 further includes forming a second mask pattern covering the top and a portion of the sidewalls of the first type epitaxial layer 01. The regenerated layer 04 is formed on the entire sidewall of the light-emitting layer 03 and a portion of the sidewalls of the first type epitaxial layer 01. After the regenerated layer 04 is formed, step 4 further includes removing the second mask pattern. Therefore, the regenerated layer 04 can be formed on a portion of the first type epitaxial layer 01 and the entire sidewall of the light-emitting layer 03.

[0252] Reference Figure 46 Step 5 includes forming a dielectric layer 052 on the regenerated layer 04 and forming an opening on the first type epitaxial layer 01, and forming a bottom contact 06 in the opening.

[0253] Here, a dielectric layer 052 is deposited on the surface of the regenerated layer 04 using a conventional chemical vapor deposition process; then, an opening is formed in the regenerated layer 04 and the dielectric layer 052 on top of the first type epitaxial layer 01; next, a bottom contact 06 is deposited into the opening and connected to the first type epitaxial layer 01.

[0254] In some embodiments, step 5 includes the following steps: first, forming a first opening in a regrowth layer 04 on top of the first type epitaxial layer 01; then, depositing a bottom contact 06 in the first opening, wherein a mask is used to cover the other areas except the first opening, and removing the mask; next, depositing a dielectric layer 052 on the regrowth layer 04 and the bottom contact 06; then, forming a second opening in the first opening in the dielectric layer 052 to expose the bottom contact 06.

[0255] In another embodiment, step 5 includes forming a bottom contact 06 before depositing the regenerated layer 04; then, depositing the regenerated layer 04 on the sidewalls of the light-emitting layer 03, the sidewalls and top of the first type epitaxial layer 01, and the bottom contact 06; next, forming a second dielectric layer 052 on the regenerated layer 04; and finally, forming an opening in the second dielectric layer 052 and the regenerated layer 04 to expose the bottom contact 06.

[0256] Reference Figure 47 Step 8 includes forming a bottom connection structure 07 in the opening.

[0257] Here, the material of the bottom connection structure 07 is deposited onto the opening and the bottom contact 06 using a conventional vapor deposition process.

[0258] Reference Figure 48 Step 9 includes bonding the bottom connection structure 07 to the IC backplane 00 by inverting the semiconductor substrate 00', and then removing the semiconductor substrate 00'.

[0259] Here, the semiconductor substrate 00' with the epitaxial structure is first inverted; then, the bottom connection structure 07 is bonded to the pads of the IC backplane 00. After the bonding process, the semiconductor substrate 00' is removed by a conventional removal process such as laser lift-off.

[0260] Reference Figure 49 Step 10 includes forming another dielectric layer 051 on the regenerated layer 04 between adjacent mesa structures.

[0261] Here, the other dielectric layer 051 is deposited on the regenerated layer 04 using a conventional vapor deposition method.

[0262] Reference Figure 50 Step 11 includes forming a top contact 09 and a top conductive layer 08 on the second type epitaxial layer 02.

[0263] Here, a top contact 09 is deposited on top of the second type epitaxial layer 02, with other areas protected by a mask, and then the mask is removed. Finally, a top conductive layer 08 is deposited on the second type epitaxial layer 02 using a conventional vapor deposition process.

[0264] Those skilled in the art should understand that microdisplay panels are not limited to the above-described structure and may include more or fewer components than those illustrated, or may combine some components, or may use different components.

[0265] Those skilled in the art will understand that all or part of the steps used to implement the foregoing embodiments can be implemented by hardware, or by a program that instructs the relevant hardware. This program can be stored in flash memory, conventional computer equipment, a central processing module, a control module, etc.

[0266] The above description is merely an embodiment of this disclosure, and this disclosure is not limited thereto. Modifications, equivalent substitutions, and improvements made without departing from the concepts and principles of this disclosure will fall within the protection scope of this disclosure.

[0267] Other embodiments also include, for example, […]. Figures 1 to 50The embodiments shown are subsets of the above embodiments combined or rearranged in various other embodiments.

[0268] While the detailed description contains many details, these should not be construed as limiting the scope of the invention, but merely as illustrating different examples and aspects of the invention. It should be understood that the scope of the invention includes other embodiments not discussed in detail above. For example, the methods described above can be applied to the integration of non-LED and OLED functional devices with control circuitry that is not pixel driver. Examples of non-LED devices include vertical-cavity surface-emitting lasers (VCSELs), photodetectors, microelectromechanical systems (MEMS), silicon photonic devices, power electronic devices, and distributed feedback lasers (DFBs). Examples of other control circuitry include current drivers, voltage drivers, transimpedance amplifiers, and logic circuits.

[0269] The foregoing description of the disclosed embodiments is provided to enable making or using the embodiments and variations thereof described herein. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments without departing from the spirit or scope of the subject matter disclosed herein. Therefore, this disclosure is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the following claims and the principles and novel features disclosed herein.

[0270] The features of this invention can be implemented using a computer program product or with the aid of a computer program product, such as a storage medium (of various media) or a computer-readable storage medium (of various media), wherein instructions are stored thereon or thereon, which can be used to program a processing system to perform any of the features presented herein. The storage medium may include, but is not limited to, high-speed random access memory, such as DRAM, SRAM, DDRRAM, or other random access solid-state memory devices, and may include non-volatile memory, such as one or more disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid-state memory devices. The memory may optionally include one or more storage devices located remotely from the CPU. The non-volatile memory devices within the memory or optionally the memory include non-transitory computer-readable storage media.

[0271] Features of the invention, stored on any machine-readable medium (of various kinds), can be contained in software and / or firmware for controlling the hardware of a processing system and enabling the processing system to interact with other entities using the results of the invention. Such software or firmware may include, but is not limited to, application code, device drivers, operating systems, and execution environments / containers.

[0272] It should be understood that although the terms “first,” “second,” etc., may be used in this document to describe various elements or steps, these elements or steps should not be limited by these terms. These terms are only used to distinguish one element or step from another.

[0273] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the claims. As used in the description of the embodiments and the appended claims, the singular forms “a,” “an,” and “this” are intended to include multiple forms as well, unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any and all possible combinations of one or more of the associated listed items. It should also be understood that the terms “comprising” and / or “including”, when used in this specification, specify the presence of said features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups.

[0274] As used herein, the term "if" can be interpreted as meaning, depending on the context, that the prerequisite of a statement is true "in the case of," "when," or "in response to detection." Similarly, the phrases "if it is determined that [the prerequisite of that statement is true]," "if [the prerequisite of the statement is true]," or "when [the prerequisite of the statement is true]" can be interpreted as meaning, depending on the context, that the stated prerequisite is true "when determined," "in response to determined," "according to determined," "when detected," or "in response to detection."

[0275] The foregoing description, used for illustration, has been described with reference to specific embodiments. However, the foregoing illustrative discussion is not intended to be exhaustive or to limit the claims to the precise forms disclosed. Many modifications and variations can be made in light of the foregoing teachings. The embodiments were chosen and described in order to best explain the principles of practical application and operation, thereby enabling others skilled in the art to best utilize the invention and its various embodiments.

Claims

1. A microLED panel with a microLED array, comprising: At least a plurality of microLED structures, each of said plurality of microLED structures comprising: The mesa structure, from bottom to top, includes a first-type epitaxial layer and a light-emitting layer; A second type of epitaxial layer is formed on top of the light-emitting layer, and the second type of epitaxial layer of the plurality of micro-LED structures is continuously formed over the entire area of ​​the micro-LED panel; and, The regenerated layer grows on at least a portion of the sidewall of the first type of epitaxial layer and the entire sidewall of the light-emitting layer.

2. A miniature LED panel, comprising: Multiple micro-LED structures, each of said multiple micro-LED structures comprising: The mesa structure, from bottom to top, includes a first-type epitaxial layer and a light-emitting layer; A second type of epitaxial layer is formed on top of the light-emitting layer, and the second type of epitaxial layer of the plurality of micro-LED structures is continuously formed over the entire area of ​​the micro-LED panel; and, A regenerated layer is grown on the entire sidewall of the first type of epitaxial layer and the entire sidewall of the light-emitting layer, and the regenerated layer completely fills the space between adjacent mesa structures of the plurality of micro-LED structures. The second type of epitaxial layer is formed on top of the regenerated length.

3. A microLED panel with a microLED array, comprising: Multiple micro-LED structures, wherein each of the multiple micro-LED structures comprises: The mesa structure, from bottom to top, includes a first-type epitaxial layer and a light-emitting layer; A second type of epitaxial layer is formed on top of the light-emitting layer, and the second type of epitaxial layer of the plurality of micro-LED structures is continuously formed over the entire area of ​​the micro-LED panel; as well as, A regenerated layer is grown on a portion of the sidewall of the first type of epitaxial layer and the entire sidewall of the light-emitting layer, and the regenerated layer fills the space between adjacent mesa structures of the plurality of micro-LED structures. The second type of epitaxial layer is formed on top of the regenerated layer.

4. A microLED panel with a microLED array, comprising: Multiple micro-LED structures, each of said multiple micro-LED structures comprising: A mesa structure, wherein the mesa structure includes, from bottom to top, a first type epitaxial layer, a light-emitting layer, and a second type epitaxial layer, the second type epitaxial layer being formed on top of the light-emitting layer, and the second type epitaxial layers of the plurality of micro-LED structures being continuous; as well as The regenerated layer grows on at least a portion of the sidewall of the first type of epitaxial layer and the entire sidewall of the light-emitting layer.

5. The micro-LED panel according to claim 1, further comprising a dielectric layer formed between adjacent mesa structures of the plurality of micro-LED structures, wherein: The top of the regenerated layer also protrudes along the top surface of the dielectric layer; and The second type of epitaxial layer is formed on top of the light-emitting layer and on top of the regenerated layer.

6. The micro LED panel according to claim 3, further comprising a dielectric layer formed at the bottom of the regenerated layer.

7. The micro-LED panel according to claim 4, wherein a dielectric layer is formed between adjacent mesa structures of the plurality of micro-LED structures; and The top of the regenerated layer also protrudes into the dielectric layer.

8. The microLED panel of claim 7, wherein the dielectric layer is formed on the surface of the regenerated layer between adjacent mesa structures of the plurality of microLED structures.

9. The micro LED panel according to any one of claims 1 and 4, wherein the regenerated layer on the sidewall of the light-emitting layer is not parallel to the extension direction of the light-emitting layer.

10. The micro LED panel of claim 6, wherein the angle of inclination of the regenerated layer on the sidewall of the light-emitting layer relative to the extension direction of the light-emitting layer is 30 degrees to 90 degrees; and The regenerated layer, which protrudes along the dielectric layer, is parallel to the top surface of the dielectric layer.

11. The micro LED panel of claim 5, wherein the regenerated layer projecting along the top surface of the dielectric layer is connected to adjacent light-emitting layers of the plurality of micro LED structures.

12. The microLED panel of claim 7, wherein the regenerated layer protruding into the dielectric layer is connected to the adjacent light-emitting layers of the plurality of microLED structures.

13. The micro LED panel according to any one of claims 1 and 4, wherein the regenerated layer is further formed on the entire sidewall of the first type of epitaxial layer.

14. The micro LED panel of claim 13, wherein the regenerated layer is further formed on the bottom surface of the first type of epitaxial layer.

15. The micro LED panel according to any one of claims 1-4, wherein the diameter of the mesa structure is not greater than 3 μm.

16. The micro LED panel according to any one of claims 1-4, wherein the light-emitting layer comprises a top surface, an edge surface, and a bottom surface; the regeneration layer is grown on the edge surface of the light-emitting layer; and the regeneration layer is not grown on the top surface and the bottom surface of the light-emitting layer.

17. The micro LED panel according to any one of claims 1 and 4, wherein the light-emitting layer comprises a plurality of pairs of quantum wells; and the regenerated layer on the sidewall of the light-emitting layer is not parallel to each of the plurality of pairs of quantum wells.

18. The micro LED panel according to any one of claims 2 and 3, wherein the light-emitting layer comprises multiple pairs of quantum wells.

19. The micro LED panel according to any one of claims 1-4, wherein the cross-section of the light-emitting layer has a straight shape without any curvature.

20. The micro LED panel according to any one of claims 1-4, wherein the material of the regenerated layer having intrinsic doped ions is the same as the material of the first type of epitaxial layer or the second type of epitaxial layer; and the material of the regenerated layer is free of intentionally non-intrinsic doped ions.

21. The micro LED panel according to any one of claims 1-4, wherein the material of the regenerated layer is one or more of GaP, AlP, GaAs, InP, AlInP, GaInP, AlN, GaN and / or InN.

22. The micro LED panel according to any one of claims 1-4, wherein the material of the regenerated layer is a single crystal; the material of the first type of epitaxial layer is a single crystal; and the material of the second type of epitaxial layer is a single crystal.

23. The micro LED panel according to any one of claims 1-4, wherein the band gap of the regenerated layer is greater than the band gap of the light-emitting layer.

24. The micro LED panel according to any one of claims 1-4, wherein the thickness of the regenerated layer is less than the thickness of the light-emitting layer.

25. The micro LED panel according to any one of claims 1-4, wherein the thickness of the regenerated layer is not greater than 100 nm.

26. The micro LED panel according to any one of claims 1-4, wherein the resistance of the regenerated layer is higher than the resistance of the light-emitting layer; and the regenerated layer is non-conductive.

27. The micro LED panel according to any one of claims 1-4, wherein: A top contact point is formed on the top of the second type of epitaxial layer; A top conductive layer is formed on top of the top contact point; A bottom contact point is formed at the bottom surface of the first type of epitaxial layer; and A bottom connection structure is formed at the bottom of the bottom contact point, which is configured to bond with the IC backplane.

28. The micro LED panel according to any one of claims 5-8, wherein the dielectric layer is made of SiO2 or SiN. x One or more of Al2O3, AlN, HfO2, TiO2 and / or ZrO2.

29. The micro LED panel according to any one of claims 1-4, wherein the material of the first type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP, and the material of the second type epitaxial layer is one or more of GaAs, InGaAs, GaP, GaN, InGaN, AlGaN, AlInP, GaInP and / or AlGaInP.

30. The microLED panel according to any one of claims 1-4, wherein the top width of the regenerated layer is the same as the top width of the spacing between adjacent light-emitting layers of the plurality of microLED structures.

31. The micro LED panel of claim 2, wherein a bottom connection structure is formed in the regenerated layer, the bottom connection structure being formed at the bottom of the first type epitaxial layer and electrically connected to the first type epitaxial layer.

32. The micro LED panel according to any one of claims 5-8, wherein a bottom connection structure is formed in the dielectric layer, the bottom connection structure being formed at the bottom of the first type epitaxial layer and electrically connected to the first type epitaxial layer.

33. A method for manufacturing a micro LED panel, comprising: A semiconductor substrate having an epitaxial structure is provided, wherein the epitaxial structure comprises, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; Multiple mesa structures are formed by patterning the first type of epitaxial layer and the light-emitting layer, wherein the second type of epitaxial layer is continuously formed over the entire area of ​​the micro LED panel; A regenerated layer is formed on at least a portion of the sidewall of the first type of epitaxial layer and on the entire sidewall of the light-emitting layer by an epitaxial material regeneration process; A dielectric layer is formed on the regenerated layer, an opening is formed in the dielectric layer on the first type epitaxial layer, and a bottom contact is formed in the opening on the surface of the first type epitaxial layer; A bottom connection structure is formed in the opening; The bottom connection structure is bonded to the IC backplane, the semiconductor substrate is inverted, and the semiconductor substrate is removed. as well as Top contacts and a top conductive layer are formed on the second type of epitaxial layer.

34. The method according to claim 33, wherein: When the regrowth layer is formed, the regrowth layer is also formed on the entire sidewall and top of the first type of epitaxial layer; and when the opening is formed, the opening is also formed in the regrowth layer on the top of the first type of epitaxial layer.

35. A method for manufacturing a micro LED panel, comprising: A semiconductor substrate having an epitaxial structure is provided, wherein the epitaxial structure comprises, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; Multiple mesa structures are formed by patterning the first type of epitaxial layer and the light-emitting layer; wherein the second type of epitaxial layer is continuously formed over the entire area of ​​the micro LED panel; A bottom contact is formed on the top of each of the plurality of platform structures; A regenerated layer is formed between adjacent mesa structures that completely fill the plurality of mesa structures. The regenerated layer is formed on the entire sidewall of the first type of epitaxial layer and the entire sidewall of the light-emitting layer by an epitaxial material regeneration process. An opening is formed in the regrowth layer on the first type of epitaxial layer; A bottom connection structure is formed in the opening; The bottom connection structure is bonded to the IC backplane, the semiconductor substrate is inverted, and the semiconductor substrate is removed. as well as Top contacts and a top conductive layer are formed on the second type of epitaxial layer.

36. A method for manufacturing a micro LED panel, comprising: A semiconductor substrate having an epitaxial structure is provided, wherein the epitaxial structure comprises, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; Multiple mesa structures are formed by patterning the first type of epitaxial layer and the light-emitting layer, wherein the second type of epitaxial layer is continuously formed over the entire area of ​​the micro LED panel; A regenerated layer is formed on the entire sidewall of the light-emitting layer and on a portion of the sidewall of the first type of epitaxial layer by an epitaxial material regeneration process; A dielectric layer is formed on the regenerated layer, an opening is formed in the dielectric layer on the first type epitaxial layer, and a bottom contact is formed in the opening on the surface of the first type epitaxial layer. A bottom connection structure is formed in the opening; The bottom connection structure is bonded to the IC backplane, the semiconductor substrate is inverted, and the semiconductor substrate is removed. as well as Top contacts and a top conductive layer are formed on the second type of epitaxial layer.

37. The method of claim 33, further comprising: Before forming the regenerated layer, a mask pattern is formed covering the top and part of the sidewalls of the first type of epitaxial layer; And after forming the regrowth layer, the mask pattern is removed.

38. A method for manufacturing a micro LED panel, comprising: A semiconductor substrate having an epitaxial structure is provided, wherein the epitaxial structure comprises, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; Multiple mesa structures are formed by patterning the epitaxial structure; A first mask pattern is formed on the semiconductor substrate to cover the sidewalls of the first type of epitaxial layer and the sidewalls of the light-emitting layer; A first dielectric layer is deposited on the substrate between adjacent mesa structures of the plurality of mesa structures, wherein the top of the first dielectric layer is aligned with the bottom of the light-emitting layer; Remove the first mask pattern; A regenerated layer is formed on the entire sidewall of the light-emitting layer and on at least a portion of the sidewall of the first type of epitaxial layer by an epitaxial material regeneration process; A second dielectric layer is formed on the regenerated layer, and an opening is formed on the first type of epitaxial layer, with a bottom contact filled in the opening; A bottom connection structure is formed in the opening; The bottom connection structure is bonded to the IC backplane, the semiconductor substrate is inverted, and the semiconductor substrate is removed. as well as Top contacts and a top conductive layer are formed on the second type of epitaxial layer.

39. A method for manufacturing a micro LED panel, comprising: A semiconductor substrate having an epitaxial structure is provided, wherein the epitaxial structure comprises, from top to bottom, a first type of epitaxial layer, a light-emitting layer, and a second type of epitaxial layer; Multiple mesa structures are formed by patterning the epitaxial structure; A first mask pattern is formed on the semiconductor substrate to cover the sidewalls of the second type of epitaxial layer, wherein the top of the first mask pattern is not higher than the bottom of the light-emitting layer; A regenerated layer is formed on the sidewall of the light-emitting layer and on at least a portion of the sidewall of the first type of epitaxial layer by an epitaxial material regeneration process; A first dielectric layer is formed on the regenerated layer, an opening is formed on the first type of epitaxial layer, and a bottom contact is filled in the opening; A bottom connection structure is formed in the opening; The bottom connection structure is bonded to the IC backplane, the semiconductor substrate is inverted, and the semiconductor substrate is removed. A second dielectric layer is formed on the regenerated layer between adjacent mesa structures in the plurality of mesa structures; as well as Top contacts and a top conductive layer are formed on the second type of epitaxial layer.

40. The method according to any one of claims 38 and 39, further comprising: Before forming the regrowth layer, a second mask pattern is formed covering the top and a portion of the sidewalls of the first type epitaxial layer, wherein the regrowth layer is formed over the entire sidewall of the light-emitting layer and a portion of the sidewalls of the first type epitaxial layer; and after forming the regrowth layer, the second mask pattern is removed.

41. The method of claim 40, wherein the material of the first mask pattern is different from the material of the second mask pattern.

42. The method according to any one of claims 38 and 39, wherein when the regenerated layer is formed, the regenerated layer is formed directly on the entire sidewall of the light-emitting layer, the entire sidewall of the first type epitaxial layer, and the top of the first type epitaxial layer.

43. The method according to any one of claims 33, 35, 36, 38 and 39, wherein in the regeneration process, the temperature is 400°C to 1000°C and the regeneration time is 5 seconds to 1000 seconds.

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