Method for regenerating a wafer cleaning brush and cleaning apparatus

Abstract

The application discloses a wafer cleaning brush regeneration method and a cleaning device, and the method comprises the following steps: obtaining the actual use frequency of the wafer cleaning brush after the wafer cleaning brush reaches a preset service life; determining the first spraying control parameter, the megasonic cleaning control parameter and the second spraying control parameter of the wafer cleaning brush according to the actual use frequency; and performing regeneration cleaning on the wafer cleaning brush according to the first spraying control parameter, the megasonic cleaning control parameter and the second spraying control parameter, so that the wafer cleaning brush after regeneration cleaning is obtained. The application solves the technical problems that the consumption of the cleaning brush is large in the prior art, the utilization rate of the wafer cleaning brush is low, and the cost of wafer cleaning is high.

Description

Technical Field

[0001] This invention relates to the field of wafer cleaning technology, and in particular to a method for regenerating wafer cleaning brushes and a cleaning apparatus. Background Technology

[0002] Currently, wafer cleaning brushes are all designed with a lifespan, which corresponds to the number of times the brush can be used to clean the wafer. After reaching the end of its lifespan, i.e., after a certain number of wafer cleaning uses, the wafer cleaning brush needs to be replaced with a new one, and the old brush is simply scrapped. Therefore, the consumption of cleaning brushes for cleaning wafers is high, resulting in low utilization of wafer cleaning brushes and high wafer cleaning costs. Summary of the Invention

[0003] This invention provides a method for regenerating wafer cleaning brushes and a cleaning apparatus to solve the technical problems of high brush consumption, low utilization rate of wafer cleaning brushes, and high cost of wafer cleaning in the prior art.

[0004] To address the aforementioned technical problems, embodiments of the present invention provide a method for regenerating a wafer cleaning brush, comprising:

[0005] After the wafer cleaning brush reaches its preset lifespan, the actual number of times the wafer cleaning brush has been used is obtained.

[0006] Based on the actual number of uses, the first spray control parameter, the mega-sound cleaning control parameter, and the second spray control parameter of the wafer cleaning brush are determined; wherein, the first spray control parameter is used to control the first cleaning spray of the wafer cleaning brush, the second spray control parameter is used to control the second cleaning spray of the wafer cleaning brush, and the mega-sound cleaning control parameter is used to control the sonic cleaning of the wafer cleaning brush.

[0007] The wafer cleaning brush is regenerated and cleaned according to the first spray control parameters, the megohmmic cleaning control parameters, and the second spray control parameters, thereby obtaining a regenerated and cleaned wafer cleaning brush.

[0008] As a preferred embodiment, after the wafer cleaning brush reaches its preset lifespan, the actual number of times the wafer cleaning brush has been used is obtained, specifically including:

[0009] Once the wafer cleaning brush reaches its preset lifespan, in response to the user placing the wafer cleaning brush in the regeneration tank, a request is sent to the original wafer cleaning equipment where the wafer cleaning brush was installed, so that the wafer cleaning equipment returns the number of wafers cleaned by the wafer cleaning brush, thereby using the number of wafers cleaned as the actual number of times the wafer cleaning brush has been used.

[0010] As a preferred embodiment, the wafer cleaning equipment is used to control the wafer cleaning brush to clean the wafer, and after each wafer is cleaned, the number of wafers cleaned by the wafer cleaning brush is recorded and updated.

[0011] As a preferred embodiment, determining the first spray control parameters, megahertz cleaning control parameters, and second spray control parameters of the wafer cleaning brush based on the actual number of uses specifically involves:

[0012] Based on the actual number of uses, the spraying time, water flow rate, spray head swing speed, spray head swing angle, spray head swing time, and first wafer cleaning brush rotation speed for the first cleaning spray are determined as the first spray control parameters.

[0013] Based on the actual number of uses, the megohm mode, megohm time, wafer cleaning brush speed and solution temperature for sonic cleaning of the wafer cleaning brush are determined as megohm cleaning control parameters.

[0014] Based on the actual number of uses and the first spray control parameters, the spray time, water flow rate, spray head swing speed, spray head swing angle, spray head swing time, and second wafer cleaning brush rotation speed for the second cleaning spray of the wafer cleaning brush are determined as the first spray control parameters.

[0015] As a preferred embodiment, the megaphonic mode includes a single megaphonic mode and a dual megaphonic mode, and the spray head sprays deionized water in the first cleaning spray and the second cleaning spray.

[0016] As a preferred embodiment, the cleaning solution used in the acoustic cleaning is NH4OH / H2O2 / H2O mixed in a ratio of 1:4:50, and the temperature range of the cleaning solution is [40℃, 50℃].

[0017] As a preferred embodiment, the spraying time range of the first cleaning spray and the second cleaning spray is [300s, 600s], the oscillation speed range of the spray head is [50r / min, 60r / min], the oscillation angle range of the spray head is [30°, 60°], the oscillation time range of the spray head is [30s, 60s], the rotation speed range of the first wafer cleaning brush is [800r / min, 900r / min], and the rotation speed of the second wafer cleaning brush is 1000r / min.

[0018] Accordingly, the present invention also provides a cleaning device, comprising: a control host, a cleaning tank, a megohm generator, a spray bar, a liquid inlet, a liquid outlet, a brush motor, a spray head, and a wafer cleaning brush to be cleaned and regenerated, with both ends fixed to the brush motor;

[0019] The control host is used to execute the wafer cleaning brush regeneration method as described above. The control host is connected to the megohm generator, spray bar, liquid inlet, liquid outlet, brush motor and spray head.

[0020] As a preferred embodiment, the number of megohmmeter generators is at least three, and the megohmmeter generators are respectively placed on two side walls and one bottom surface of the cleaning tank.

[0021] As a preferred embodiment, the number of brush motors is at least two, and the brush motors are respectively placed on two opposing side walls of the cleaning tank. The number of spray heads is several, and the spray heads are evenly arranged on the spray rod, which is positioned above the brush motors.

[0022] The liquid inlet and the liquid outlet are respectively located above and below the same side wall of the cleaning tank.

[0023] Compared with the prior art, the embodiments of the present invention have the following beneficial effects:

[0024] The technical solution of this invention allows for the regeneration and cleaning of wafer cleaning brushes by determining cleaning parameters based on actual usage frequency, thus extending their service life. Compared to existing disposable methods, regeneration and cleaning enables the wafer cleaning brushes to be used multiple times, improving their utilization rate. Furthermore, regeneration and cleaning reduces the need for new wafer cleaning brushes, thereby saving materials and energy required for their production. The extended service life also reduces replacement frequency and lowers maintenance and replacement costs. By adjusting the first spray control parameters, second spray control parameters, and megasonic cleaning control parameters according to actual usage frequency, the wear and tear on the wafer cleaning brushes can be better adapted, ensuring the stability and consistency of the cleaning effect. The regenerated wafer cleaning brushes provide cleaning results comparable to new ones. In addition, regeneration and cleaning reduces the number of discarded wafer cleaning brushes, lowering waste generation and thus reducing environmental pollution. Attached Figure Description

[0025] Figure 1 : This is a flowchart of the steps of a wafer cleaning brush regeneration method provided in an embodiment of the present invention;

[0026] Figure 2 : This is a schematic diagram of the internal connections of a cleaning device provided in an embodiment of the present invention;

[0027] Figure 3 : A structural diagram of a cleaning device provided in an embodiment of the present invention;

[0028] Figure 4 : Side view of the cleaning device provided in an embodiment of the present invention;

[0029] Figure 5 : This is a structural diagram of the spray bar and spray head provided in the embodiment of the present invention. Detailed Implementation

[0030] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0031] Example 1

[0032] Please refer to Figure 1 The present invention provides a method for regenerating a wafer cleaning brush, comprising the following steps S101-S103:

[0033] Step S101: After the wafer cleaning brush reaches its preset lifespan, obtain the actual number of times the wafer cleaning brush has been used.

[0034] In a preferred embodiment, after the wafer cleaning brush reaches its preset lifespan, the actual number of times the wafer cleaning brush has been used is obtained, specifically including:

[0035] Once the wafer cleaning brush reaches its preset lifespan, in response to the user placing the wafer cleaning brush in the regeneration tank, a request is sent to the original wafer cleaning equipment where the wafer cleaning brush was installed, so that the wafer cleaning equipment returns the number of wafers cleaned by the wafer cleaning brush, thereby using the number of wafers cleaned as the actual number of times the wafer cleaning brush has been used.

[0036] In this embodiment, by monitoring the actual number of times the wafer cleaning brush is used, it can be regenerated and cleaned in a timely manner after reaching its preset lifespan, thereby extending the lifespan of the wafer cleaning brush. Simultaneously, by regenerating and cleaning the wafer cleaning brush based on the actual number of uses, its cleaning effect can be restored, reducing the decline in cleaning effect caused by wear and clogging, thus improving cleaning efficiency. Furthermore, by recycling used wafer cleaning brushes, the demand for new wafer cleaning brushes can be reduced, lowering resource consumption and waste generation. Moreover, the user only needs to place the wafer cleaning brush in the regeneration tank, and the system automatically sends a request and obtains the number of wafers cleaned, eliminating the need for manual recording or calculation of usage counts, simplifying the operation process. By sending a request to the wafer cleaning equipment originally equipped with the wafer cleaning brush, the number of wafers cleaned can be obtained in real time, and this value can be recorded and fed back as the actual number of uses, providing accurate data support.

[0037] As a preferred embodiment, the wafer cleaning equipment is used to control the wafer cleaning brush to clean the wafer, and after each wafer is cleaned, the number of wafers cleaned by the wafer cleaning brush is recorded and updated.

[0038] In this embodiment, by using a wafer cleaning device to control the wafer cleaning brush, it is ensured that the brush operates with appropriate force and frequency each time it cleans a wafer, thereby improving cleaning efficiency. Traditional wafer cleaning processes typically require manual operation of the cleaning brush; this embodiment uses automated equipment to control the brush, reducing the need for manual operation and increasing work efficiency. After each wafer is cleaned, this embodiment records and updates the number of wafers cleaned by the cleaning brush, allowing for real-time monitoring of brush usage and timely replacement or repair to ensure cleaning quality. Simultaneously, automated control of the wafer cleaning brush reduces manual operation and maintenance costs. Furthermore, timely replacement or repair of the brush avoids additional costs due to overuse. Moreover, using a wafer cleaning device to control the brush ensures consistent operating parameters for each wafer cleaning, thereby improving the consistency and repeatability of cleaning results and ensuring the high precision and reliability of semiconductor manufacturing processes.

[0039] Step S102: Based on the actual number of uses, determine the first spray control parameter, the megaphone cleaning control parameter, and the second spray control parameter of the wafer cleaning brush; wherein, the first spray control parameter is used to control the first cleaning spray of the wafer cleaning brush, the second spray control parameter is used to control the second cleaning spray of the wafer cleaning brush, and the megaphone cleaning control parameter is used to control the sonic cleaning of the wafer cleaning brush.

[0040] As a preferred embodiment, the step of determining the first spray control parameter, megahertz cleaning control parameter, and second spray control parameter of the wafer cleaning brush based on the actual number of uses specifically involves:

[0041] Based on the actual number of uses, the spraying time, water flow rate, spray head oscillation speed, spray head oscillation angle, spray head oscillation time, and first wafer cleaning brush rotation speed for the first cleaning spray are determined as the first spray control parameters; based on the actual number of uses, the megohm mode, megohm time, wafer cleaning brush rotation speed, and chemical solution temperature for the sonic cleaning of the wafer cleaning brush are determined as the megohm cleaning control parameters; based on the actual number of uses and the first spray control parameters, the spraying time, water flow rate, spray head oscillation speed, spray head oscillation angle, spray head oscillation time, and second wafer cleaning brush rotation speed for the second cleaning spray of the wafer cleaning brush are determined as the first spray control parameters.

[0042] As a preferred embodiment, the megaphonic mode includes a single megaphonic mode and a dual megaphonic mode, and the spray head sprays deionized water in the first cleaning spray and the second cleaning spray.

[0043] As a preferred embodiment, the cleaning solution used in the acoustic cleaning is NH4OH / H2O2 / H2O mixed in a ratio of 1:4:50, and the temperature range of the cleaning solution is [40℃, 50℃].

[0044] As a preferred embodiment, the spraying time range of the first cleaning spray and the second cleaning spray is [300s, 600s], the oscillation speed range of the spray head is [50r / min, 60r / min], the oscillation angle range of the spray head is [30°, 60°], the oscillation time range of the spray head is [30s, 60s], the rotation speed range of the first wafer cleaning brush is [800r / min, 900r / min], and the rotation speed of the second wafer cleaning brush is 1000r / min.

[0045] In this embodiment, the wafer cleaning brush to be regenerated and cleaned is installed inside the cleaning tank. The spray head first sprays deionized water for 300-600 seconds. Deionized water refers to pure water after removing impurities in ionic form; using deionized water avoids chemical reactions with the brush, thus preventing brush corrosion. The spray bar then begins to swing at an angle of 30°-60° and a speed of 50-60 r / min, washing away larger particles adhering to the brush and softening stubborn particles. The brush motor drives the brush to rotate at approximately 800-1000 r / min, evenly spraying deionized water onto the brush and dislodging the washed particles. The spray head swing time is the same as the deionized water spray time, both 30-60 seconds.

[0046] In this embodiment, after spraying, the waste liquid is drained through the drain port, and the cleaning solution is refilled through the inlet to fill the entire tank. The cleaning solution is prepared by mixing NH4OH / H2O2 / H2O in a ratio of 1:4:50. The solution temperature is between 40°C and 50°C. Heating the solution softens stubborn particles, making them easier to remove from the brush surface. The particle removal mechanism is achieved through the electrical repulsion of the particles. Hydrogen peroxide, as a strong oxidant, oxidizes the stubborn particles on the brush, destroying the adhesion between the particles and the brush, thus dissolving the particles in the liquid. Ammonium hydroxide (OH-) ions... - Negative charges accumulate on the surface of the brush and the particles. The negative charge on the particles causes them to disperse from the surface and prevents them from re-aggregating.

[0047] Furthermore, the megahertz generator produces megahertz-level high-energy sound waves. Driven by these sound waves, solution molecules accelerate, generating a high-speed fluid that continuously impacts the brush, forcibly removing the attached particles. This process lasts for 1200 seconds. The contaminated cleaning solution is then discharged through the drain port, completing the brush regeneration process. After regeneration, the brush is kept moist, filled with nitrogen, and sealed for storage, eliminating the need for activation time after installing a new brush. The single megahertz mode refers to the process being performed only by the bottom megahertz module, while the dual megahertz mode involves the combined process of the bottom and sidewall megahertz modules to enhance the cleaning effect.

[0048] In this embodiment, please refer to Table 1 below, which is a table showing the settings of the first spray control parameters, mega-sound cleaning control parameters, and second spray control parameters of the wafer cleaning brush under different service lives in this embodiment:

[0049]

[0050]

[0051] In this embodiment, the wafer cleaning brush that has reached the end of its service life is subjected to mega-sound cleaning to regenerate the brush bristles, extend the service life of the brushes, save consumables, and at the same time eliminate the activation time for replacing brushes, thereby improving equipment utilization and further saving costs.

[0052] Step S103: Based on the first spray control parameters, the megaphonic cleaning control parameters, and the second spray control parameters, the wafer cleaning brush is regenerated and cleaned to obtain a regenerated and cleaned wafer cleaning brush.

[0053] In this embodiment, the user can, exemplarily, input the first spray control parameters, the megasonic cleaning control parameters, and the second spray control parameters through an interface or control system. Upon receiving the input signals, the control host calculates the corresponding control signals based on these parameters and generates corresponding control signals based on the calculation results, including control signals for spray time and intensity, as well as control signals for the frequency and power of megasonic cleaning. Furthermore, the control host transmits the generated control signals to the actuators of the wafer cleaning brush, such as the spray device and the megasonic generator.

[0054] In this embodiment, the spraying device performs a spraying operation according to the received control signal, spraying an appropriate amount of cleaning fluid at certain time intervals. Simultaneously, the megasonic generator generates megasonic waves based on the received control signal and applies them to the wafer cleaning brush. Furthermore, the control unit can monitor various indicators during the regeneration cleaning process, such as the concentration of the cleaning fluid, spraying time and intensity, megasonic frequency, and power. Based on the monitoring results, the control unit can adjust and optimize the control signal to achieve better cleaning results. After the regeneration cleaning is completed, the control unit can feed back the status information of the cleaned wafer cleaning brush to the user, allowing the user to understand the cleaning quality and effect.

[0055] Understandably, by using regeneration cleaning based on the first spray control parameters, megasonic cleaning control parameters, and second spray control parameters, the spraying of the cleaning fluid and the application of megasonic waves can be more precisely controlled, thereby improving cleaning efficiency. Appropriate spray time and intensity, as well as megasonic frequency and power, allow the wafer cleaning brush to better remove contaminants, reducing cleaning time. Simultaneously, precise control of the spray and megasonic parameters ensures that the cleaning fluid is evenly distributed on the wafer surface and thoroughly removes contaminants. Furthermore, megasonic waves can penetrate deep into the wafer's microstructure, effectively removing hard-to-clean dirt and residues, improving cleaning quality. In addition, the regeneration cleaning process can repair wear and damage to the wafer cleaning brush, restoring it to a better working condition. Compared to replacing a new wafer cleaning brush, regeneration cleaning can extend its service life and reduce maintenance costs.

[0056] Furthermore, recyclable cleaning can reduce the number of waste wafer cleaning brushes, saving raw materials and energy consumption. In addition, by optimizing spray and mega-sound cleaning parameters, the amount of cleaning fluid used can be reduced, further conserving resources. Recyclable cleaning can also reduce waste generation and environmental pollution. Simultaneously, optimized cleaning parameters can reduce the amount of cleaning fluid used, thus reducing water consumption.

[0057] Implementing the above embodiments has the following effects:

[0058] The technical solution of this invention allows for the regeneration and cleaning of wafer cleaning brushes by determining cleaning parameters based on actual usage frequency, thus extending their service life. Compared to existing disposable methods, regeneration and cleaning enables the wafer cleaning brushes to be used multiple times, improving their utilization rate. Furthermore, regeneration and cleaning reduces the need for new wafer cleaning brushes, thereby saving materials and energy required for their production. The extended service life also reduces replacement frequency and lowers maintenance and replacement costs. By adjusting the first spray control parameters, second spray control parameters, and megasonic cleaning control parameters according to actual usage frequency, the wear and tear on the wafer cleaning brushes can be better adapted, ensuring the stability and consistency of the cleaning effect. The regenerated wafer cleaning brushes provide cleaning results comparable to new ones. In addition, regeneration and cleaning reduces the number of discarded wafer cleaning brushes, lowering waste generation and thus reducing environmental pollution.

[0059] Example 2

[0060] Please see Figure 2 The present invention provides a cleaning device comprising: a control host 1, a cleaning tank 2000, a megohm generator 2001, a spray bar 2002, a liquid inlet 2004, a liquid outlet 2005, a brush motor 2006, a spray head 2010, and a wafer cleaning brush 2003 to be cleaned and regenerated, which is fixed at both ends to the brush motor 2006.

[0061] The control host 1 is used to execute the regeneration method of the wafer cleaning brush 2003 as described in any one of the above embodiments. The control host 1 is connected to the megohm generator 2001, the spray bar 2002, the liquid inlet 2004, the liquid outlet 2005, the brush motor 2006, and the spray head 2010.

[0062] The control host 1 includes a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor. Specifically, when the processor executes the computer program, it implements the regeneration method of the wafer cleaning brush 2003 as described in any of the above embodiments.

[0063] In this embodiment, please refer to Figure 3 and 4The control host 1 can control the execution of the megasonic generator 2001, spray bar 2002, liquid inlet 2004, liquid outlet 2005, brush motor 2006 and spray head 2010 through a computer program stored in memory and configured to be executed by a processor, so that the megasonic generator 2001, spray bar 2002, liquid inlet 2004, liquid outlet 2005, brush motor 2006 and spray head 2010 can perform regeneration cleaning of the wafer cleaning brush 2003 according to the set first spray control parameters, megasonic cleaning control parameters and second spray control parameters.

[0064] As a preferred embodiment, the number of megohm generators 2001 is at least three, and the megohm generators 2001 are respectively placed on two side walls and one bottom surface of the cleaning tank 2000.

[0065] As a preferred embodiment, the number of brush motors 2006 is at least two, and the brush motors 2006 are respectively placed on two facing side walls of the cleaning tank 2000. Please refer to [link / reference]. Figure 5 The number of spray heads 2010 is several, and the spray heads 2010 are evenly arranged on the spray rod 2002, which is located above the brush motor 2006.

[0066] The liquid inlet 2004 and the liquid outlet 2005 are respectively located above and below the same side wall of the cleaning tank 2000.

[0067] In this embodiment, the cleaning device integrates functional modules such as a megasonic generator 2001, a spray bar 2002, a liquid inlet 2004, a liquid outlet 2005, a brush motor 2006, and a spray head 2010. It can simultaneously perform multiple cleaning methods such as ultrasonic cleaning, spray cleaning, and brushing, allowing for the selection of appropriate cleaning methods according to different cleaning needs and improving the cleaning effect.

[0068] In this embodiment, the wafer cleaning brush 2003 is regenerated by the control host 1, thus achieving an automated cleaning process. Compared to traditional manual cleaning methods, automated cleaning improves cleaning efficiency and consistency, and reduces errors caused by manual operation. Simultaneously, the control host 1 is connected to various functional modules, enabling precise control of the cleaning process. For example, the frequency and power of the ultrasonic waves, as well as parameters such as the water pressure and flow rate of the spray head 2010, can be adjusted according to the characteristics and contamination level of the wafer to achieve optimal cleaning results.

[0069] Furthermore, using a pre-recycled wafer cleaning brush 2003 reduces the need for new brushes, saving resources. Simultaneously, the design of the chemical inlet 2004 and outlet 2005 allows for chemical recycling, reducing waste. Additionally, controlling the cleaning process via the main unit 1 reduces the risk of manual contact with chemicals, improving work safety. Moreover, the design of the spray bar 2002 and spray head 2010 ensures a more even distribution of cleaning solution on the wafer surface, reducing the risk of damage due to localized over-cleaning.

[0070] Implementing the above embodiments has the following effects:

[0071] The technical solution of this invention allows for the regeneration and cleaning of wafer cleaning brushes by determining cleaning parameters based on actual usage frequency, thus extending their service life. Compared to existing disposable methods, regeneration and cleaning enables the wafer cleaning brushes to be used multiple times, improving their utilization rate. Furthermore, regeneration and cleaning reduces the need for new wafer cleaning brushes, thereby saving materials and energy required for their production. The extended service life also reduces replacement frequency and lowers maintenance and replacement costs. By adjusting the first spray control parameters, second spray control parameters, and megasonic cleaning control parameters according to actual usage frequency, the wear and tear on the wafer cleaning brushes can be better adapted, ensuring the stability and consistency of the cleaning effect. The regenerated wafer cleaning brushes provide cleaning results comparable to new ones. In addition, regeneration and cleaning reduces the number of discarded wafer cleaning brushes, lowering waste generation and thus reducing environmental pollution.

[0072] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the scope of protection of the present invention. In particular, it should be noted that any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention for those skilled in the art.

Claims

1. A method for regenerating a wafer cleaning brush, characterized in that, include: After the wafer cleaning brush reaches its preset lifespan, the actual number of times the wafer cleaning brush has been used is obtained. Specifically, this includes: after the wafer cleaning brush reaches its preset lifespan, in response to the user placing the wafer cleaning brush in the regeneration tank, sending a request to the original wafer cleaning equipment where the wafer cleaning brush was installed, so that the wafer cleaning equipment returns the number of wafers cleaned by the wafer cleaning brush, thereby using the number of wafers cleaned as the actual number of times the wafer cleaning brush has been used; Based on the actual number of uses, the first spray control parameters, mega-sound cleaning control parameters, and second spray control parameters of the wafer cleaning brush are determined; wherein, the first spray control parameters are used to control the first cleaning spray of the wafer cleaning brush, the second spray control parameters are used to control the second cleaning spray of the wafer cleaning brush, and the mega-sound cleaning control parameters are used to control the sonic cleaning of the wafer cleaning brush, specifically: based on the actual number of uses, the spray time, water flow rate, and spray head oscillation speed of the wafer cleaning brush for the first cleaning spray are determined. The spray head swing angle, spray head swing time, and first wafer cleaning brush rotation speed are used as the first spray control parameters. Based on the actual number of uses, the megohm mode, megohm time, wafer cleaning brush rotation speed, and solution temperature for sonic cleaning of the wafer cleaning brush are determined as megohm cleaning control parameters. Based on the actual number of uses and the first spray control parameters, the spray time, water flow rate, spray head swing speed, spray head swing angle, spray head swing time, and second wafer cleaning brush rotation speed for the second cleaning spray of the wafer cleaning brush are determined as the second spray control parameters. The megaphonic mode includes a single megaphonic mode and a dual megaphonic mode. The first and second cleaning sprays use deionized water. The cleaning solution used in the acoustic cleaning is NH4OH / H2O2 / H2O mixed in a ratio of 1:4:50, and the temperature range of the cleaning solution is [40℃, 50℃]. The wafer cleaning brush is regenerated and cleaned according to the first spray control parameters, the megohmmic cleaning control parameters, and the second spray control parameters, thereby obtaining a regenerated and cleaned wafer cleaning brush.

2. The method for regenerating a wafer cleaning brush as described in claim 1, characterized in that, The wafer cleaning equipment is used to control the wafer cleaning brush to clean the wafers, and after each wafer is cleaned, it records and updates the number of wafers cleaned by the wafer cleaning brush.

3. The method for regenerating a wafer cleaning brush as described in claim 1, characterized in that, The spraying time ranges for the first and second cleaning sprays are [300s, 600s], the oscillation speed range of the spray head is [50r / min, 60r / min], the oscillation angle range of the spray head is [30°, 60°], the oscillation time range of the spray head is [30s, 60s], the rotation speed range of the first wafer cleaning brush is [800r / min, 900r / min], and the rotation speed of the second wafer cleaning brush is 1000r / min.

4. A cleaning device, characterized in that, include: The system includes a control unit, a cleaning tank, a megohm generator, a spray bar, a liquid inlet, a liquid outlet, a brush motor, a spray head, and a wafer cleaning brush to be cleaned and regenerated, with both ends fixed to the brush motor. The control host is used to execute the wafer cleaning brush regeneration method as described in any one of claims 1-3. The control host is connected to the megohm generator, spray bar, liquid inlet, liquid outlet, brush motor and spray head.

5. The cleaning device as described in claim 4, characterized in that, The number of megohmmeter generators is at least three, and the megohmmeter generators are respectively placed on two side walls and one bottom surface of the cleaning tank.

6. The cleaning device as described in claim 4, characterized in that, The number of brush motors is at least two, and the brush motors are respectively placed on two opposing side walls of the cleaning tank. The number of spray heads is several, and the spray heads are evenly arranged on the spray rod, which is positioned above the brush motors. The liquid inlet and the liquid outlet are respectively located above and below the same side wall of the cleaning tank.

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