Silicon wafer wire cutting method

Abstract

This application provides a silicon wafer wire cutting method, comprising the following steps: after feeding the wire end from the feed reel to the take-up reel, feeding new wire from the feed reel to the take-up reel, connecting the wire end and the new wire at the take-up reel, so that the new wire between two adjacent wire reels forms a wire mesh. The initial cutting position of the silicon rod is set at the wire mesh, and the wire mesh reciprocates according to preset process parameters to cut the silicon rod into silicon wafers. Initially, the cutting is done with new wire. The cutting method of this application helps to reduce the amount of brand-new wire used, reduces wire loss caused by wire running and twisting, reduces operation time, and reduces the probability of wire snagging and wafer drop due to excessive cutting force.

Description

Technical Field

[0001] This invention relates to the technical field of silicon wafer production, and specifically to a method for wire cutting silicon wafers. Background Technology

[0002] Currently, the following two new wire supply methods are generally used in the photovoltaic silicon wafer cutting process: (1) Forward cutting, the wire is supplied in the forward direction for direct cutting. (2) Reverse cutting, the steel wire to be used is transferred to the take-up reel and wire net before cutting, and the wire is supplied in the reverse direction after cutting begins.

[0003] During wire cutting, if a new wire makes its first cut or if an abnormal cut occurs, the wire end often runs out of the equipment. This can easily lead to significant waste of cutting force and high wire loss. Summary of the Invention

[0004] In order to overcome the shortcomings of the prior art, the purpose of this invention is to provide a silicon wafer wire cutting method. The cutting method of this application is beneficial to reducing the amount of new wire used, reducing wire loss caused by wire running and twisting, reducing operation time, and reducing the probability of wire hanging and wafer falling off due to excessive cutting depth caused by excessive wire cutting force.

[0005] To solve the above problems, the technical solution adopted by the present invention is as follows:

[0006] A method for wire-cutting silicon wafers, comprising:

[0007] After the end of the wire is fed from the feed reel to the take-up reel, a new wire is fed from the feed reel to the take-up reel, and the end of the wire and the new wire are connected at the take-up reel, so that the new wire between two adjacent guide reels forms a wire mesh;

[0008] The initial cutting position of the silicon rod is set at the wire mesh, and the wire mesh reciprocates according to preset process parameters to cut the silicon rod into silicon wafers. The initial cutting is a new wire cut.

[0009] In some possible implementations, the cutting process includes an initial feed speed increase phase and a later feed speed decrease phase, wherein the minimum feed speed of the initial feed speed increase phase is 800 μm / min and the maximum feed speed is 3000 μm / min, and the minimum feed speed of the later feed speed decrease phase is 100 μm / min.

[0010] In some possible implementations, the wire feed amount in the initial feed speed increase phase is greater than the wire return amount, the wire feed amount in the first part of the later feed speed decrease phase is greater than the wire return amount, the minimum feed speed in the first part of the later feed speed decrease phase is 2200um / min, and the wire feed amount in the latter part of the later feed speed decrease phase is less than the wire return amount.

[0011] In some possible implementations, during the initial feed speed increase phase, in step one, the table speed is 800 μm / min, the wire feed is 502 m, and the wire return is 480 m; in step two, the table speed is 2000 μm / min, the wire feed is 767 m, and the wire return is 659 m; in step three, the table speed is 2600 μm / min, the wire feed is 725 m, and the wire return is 633 m; in step four, the table speed is 3000 μm / min, the wire feed is 732 m, and the wire return is 646 m; in step five, the table speed is 3000 μm / min, the wire feed is 697 m, and the wire return is 614 m; and in step six, the table speed is 3000 μm / min, the wire feed is 697 m, and the wire return is 614 m.

[0012] In some possible implementations, in the initial stage of the later feed speed reduction phase, at step seven, the table speed is 2900 μm / min, the wire feed is 697 m, and the wire return is 614 m; at step eight, the table speed is 2900 μm / min, the wire feed is 690 m, and the wire return is 608 m; at step nine, the table speed is 2800 μm / min, the wire feed is 690 m, and the wire return is 608 m; at step ten... The table speed is 2700um / min, the feed line is 697m, and the return line is 614m. In step eleven, the table speed is 2500um / min, the feed line is 695m, and the return line is 616m. In step twelve, the table speed is 2400um / min, the feed line is 702m, and the return line is 622m. In step thirteen, the table speed is 2200um / min, the feed line is 702m, and the return line is 622m.

[0013] In some possible implementations, in the later stage of the reduced feed speed phase, at step fourteen, the table speed is 1400 μm / min, the wire feed is 463 m, and the wire return is 860 m; at step fifteen, the table speed is 1200 μm / min, the wire feed is 432 m, and the wire return is 829 m; at step sixteen, the table speed is 1000 μm / min, the wire feed is 623 m, and the wire return is 1178 m; at step seventeen, the table speed is 800 μm / min, the wire feed is 960 m, and the wire return is 1653 m; at step eighteen, the table speed is 250 μm / min, the wire feed is 1061 m, and the wire return is 1645 m; at step nineteen, the table speed is 100 μm / min, the wire feed is 1453 m, and the wire return is 1853 m.

[0014] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0015] In this application, the aforementioned cutting method reduces the amount of new wire used during reverse cutting. Furthermore, the first cut with new wire eliminates the need for wire transfer, reducing wire loss from wire running and twisting, and also decreasing the time spent on wire running. For forward cutting, it further reduces the amount of new wire used. This cutting method also reduces the probability of excessive cutting depth due to excessive cutting force, leading to wire snagging and sheet breakage during new wire cutting.

[0016] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of a wire feeding reel, a wire taking reel, and a wire guide reel forming a wire mesh to cut a silicon rod, according to an embodiment of this application.

[0018] Explanation of icon numbers:

[0019] 10 - Paying reel; 20 - Taking reel; 30 - Guide reel; 40 - Silicon rod. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0021] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. It should be noted that when an element is referred to as "fixed to" another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as "connected to" another element, it may be directly connected to the other element or there may be an intervening element. When an element is referred to as "disposed on" another element, it may be disposed on the other element or there may be an intervening element.

[0022] One embodiment of this application provides a silicon wafer wire cutting method, including the following steps:

[0023] Reference Figure 1After the lead wire from the pay-off reel 10 is fed to the take-up reel 20, a new lead wire is fed from the pay-off reel 10 to the take-up reel 20, connecting the lead wire and the new lead wire at the take-up reel 20, so that the new lead wire between adjacent guide reels 30 forms a wire mesh. For example, the lead wire and the new lead wire can be connected by welding. For example, both the lead wire and the new lead wire can be diamond wire. For example, the pay-off reel 10 and the take-up reel 20 can be rotated independently by a motor.

[0024] The initial cutting position of the silicon rod 40 is set at the wire mesh. The wire mesh reciprocates according to preset process parameters to cut the silicon rod 40 into silicon wafers; this is initially a new wire cut. That is, the guide wheel 30 can drive the wire mesh to reciprocate by rotating clockwise and counterclockwise to cut the silicon rod 40. Whether cutting in the forward or reverse direction, the first cut always starts from a new wire cut. For example, a robotic arm can grasp the silicon rod 40 and move it closer to the wire mesh.

[0025] In this application, the aforementioned cutting method reduces the amount of new wire used during reverse cutting. Furthermore, the first cut with new wire eliminates the need for wire transfer, reducing wire loss from wire running and twisting, and also decreasing the time spent on wire running. For forward cutting, it further reduces the amount of new wire used. This cutting method also reduces the probability of excessive cutting depth due to excessive cutting force, leading to wire snagging and sheet breakage during new wire cutting.

[0026] In some embodiments, the cutting process includes an initial feed speed increase stage and a later feed speed decrease stage. The minimum feed speed in the initial feed speed increase stage is 800 μm / min, and the maximum feed speed is 3000 μm / min. The minimum feed speed in the later feed speed decrease stage is 100 μm / min.

[0027] In some embodiments, the wire feed amount in the initial feed speed increase stage is greater than the wire return amount, the wire feed amount in the first part of the later feed speed decrease stage is greater than the wire return amount, the minimum table speed in the first part of the later feed speed decrease stage is 2200um / min, and the wire feed amount in the second part of the later feed speed decrease stage is less than the wire return amount.

[0028] In some embodiments, during the initial feed speed increase stage, in step one, the table speed is 800 μm / min, the wire feed is 502 m, and the wire return is 480 m; in step two, the table speed is 2000 μm / min, the wire feed is 767 m, and the wire return is 659 m; in step three, the table speed is 2600 μm / min, the wire feed is 725 m, and the wire return is 633 m; in step four, the table speed is 3000 μm / min, the wire feed is 732 m, and the wire return is 646 m; in step five, the table speed is 3000 μm / min, the wire feed is 697 m, and the wire return is 614 m; and in step six, the table speed is 3000 μm / min, the wire feed is 697 m, and the wire return is 614 m.

[0029] In some embodiments, during the initial stage of the later feed speed reduction phase, in step seven, the table speed is 2900 μm / min, the wire feed is 697 m, and the wire return is 614 m; in step eight, the table speed is 2900 μm / min, the wire feed is 690 m, and the wire return is 608 m; in step nine, the table speed is 2800 μm / min, the wire feed is 690 m, and the wire return is 608 m; in step ten, the table speed... The speed is 2700um / min, the feed rate is 697m, and the return rate is 614m. In step eleven, the speed is 2500um / min, the feed rate is 695m, and the return rate is 616m. In step twelve, the speed is 2400um / min, the feed rate is 702m, and the return rate is 622m. In step thirteen, the speed is 2200um / min, the feed rate is 702m, and the return rate is 622m.

[0030] In some embodiments, in the later stage of the reduced feed table speed phase, at step fourteen, the table speed is 1400 μm / min, the wire feed is 463 m, and the wire return is 860 m; at step fifteen, the table speed is 1200 μm / min, the wire feed is 432 m, and the wire return is 829 m; at step sixteen, the table speed is 1000 μm / min, the wire feed is 623 m, and the wire return is 1178 m; at step seventeen, the table speed is 800 μm / min, the wire feed is 960 m, and the wire return is 1653 m; at step eighteen, the table speed is 250 μm / min, the wire feed is 1061 m, and the wire return is 1645 m; at step nineteen, the table speed is 100 μm / min, the wire feed is 1453 m, and the wire return is 1853 m.

[0031] By coordinating the aforementioned table speed, wire feed rate, and wire return rate, the cutting method of this application helps to reduce cutting time, thereby improving cutting efficiency. The parameter settings provided in this application can reduce the process time to 80 minutes.

[0032] The above embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of protection of the present invention. Any non-substantial changes and substitutions made by those skilled in the art based on the present invention shall fall within the scope of protection claimed by the present invention.

Claims

1. A method for wire cutting silicon wafers, characterized in that, include: After the end of the wire is fed from the feed reel to the take-up reel, a new wire is fed from the feed reel to the take-up reel, and the end of the wire and the new wire are connected at the take-up reel, so that the new wire between two adjacent guide reels forms a wire mesh; The initial cutting position of the silicon rod is set at the wire mesh, and the wire mesh reciprocates according to preset process parameters to cut the silicon rod into silicon wafers. The initial cutting is a new wire cut. The cutting process includes an initial feed speed increase phase and a subsequent feed speed decrease phase. The minimum feed speed in the initial feed speed increase phase is 800 μm / min, and the maximum feed speed is 3000 μm / min. The minimum feed speed in the subsequent feed speed decrease phase is 100 μm / min. In the initial feed speed increase phase, the wire feed amount is greater than the wire return amount. In the initial phase of the subsequent feed speed decrease phase, the wire feed amount is greater than the wire return amount. The minimum feed speed in the initial phase of the subsequent feed speed decrease phase is 2200 μm / min. In the later phase of the subsequent feed speed decrease phase, the wire feed amount is less than the wire return amount.

2. The silicon wafer wire cutting method as described in claim 1, characterized in that, During the initial stage of increasing the feed table speed, in step one, the table speed is 800 μm / min, the wire feed is 502 m, and the wire return is 480 m; in step two, the table speed is 2000 μm / min, the wire feed is 767 m, and the wire return is 659 m; in step three, the table speed is 2600 μm / min, the wire feed is 725 m, and the wire return is 633 m; in step four, the table speed is 3000 μm / min, the wire feed is 732 m, and the wire return is 646 m; in step five, the table speed is 3000 μm / min, the wire feed is 697 m, and the wire return is 614 m; and in step six, the table speed is 3000 μm / min, the wire feed is 697 m, and the wire return is 614 m.

3. The silicon wafer wire cutting method as described in claim 2, characterized in that, In the initial stage of the later-stage feed speed reduction phase, at step seven, the table speed is 2900 μm / min, the wire feed is 697 m, and the wire return is 614 m; at step eight, the table speed is 2900 μm / min, the wire feed is 690 m, and the wire return is 608 m; at step nine, the table speed is 2800 μm / min, the wire feed is 690 m, and the wire return is 608 m; at step ten, the table speed is 270 μm / min. At step 11, the speed is 2500um / min, the feed rate is 697m, and the return rate is 614m. At step 12, the speed is 2400um / min, the feed rate is 702m, and the return rate is 622m. At step 13, the speed is 2200um / min, the feed rate is 702m, and the return rate is 622m.

4. The silicon wafer wire cutting method as described in claim 3, characterized in that, In the later stage of the reduced feed table speed, at step fourteen, the table speed is 1400 μm / min, the wire feed is 463 m, and the wire return is 860 m; at step fifteen, the table speed is 1200 μm / min, the wire feed is 432 m, and the wire return is 829 m; at step sixteen, the table speed is 1000 μm / min, the wire feed is 623 m, and the wire return is 1178 m; at step seventeen, the table speed is 800 μm / min, the wire feed is 960 m, and the wire return is 1653 m; at step eighteen, the table speed is 250 μm / min, the wire feed is 1061 m, and the wire return is 1645 m; at step nineteen, the table speed is 100 μm / min, the wire feed is 1453 m, and the wire return is 1853 m.

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