A method for obtaining a target work performance superconducting resonant cavity and a quantum processor

Abstract

The application relates to the technical field of quantum computers, in particular to a method for obtaining a superconducting resonant cavity with target working performance and a quantum processor, wherein the method comprises the following steps: obtaining an operation variable describing a preparation process of the superconducting resonant cavity; obtaining a product morphology index of the superconducting resonant cavity prepared by the preparation process based on the operation variable, and establishing a first change relationship between the product morphology index and the operation variable; obtaining working performance of the superconducting resonant cavity with the product morphology index in a working environment, and establishing a second change relationship between the working performance and the product morphology index; obtaining a target operation variable value corresponding to target working performance according to the second change relationship and the first change relationship; and preparing the superconducting resonant cavity by a preparation process based on the target operation variable value to obtain the superconducting resonant cavity with the target working performance. By using the characterization data of the change relationship summarized in the initial room temperature and low temperature working environment test, the characterization data can be used to quickly obtain the data of the low temperature working environment in subsequent sample design and test, so that the development and design cycle of the superconducting resonant cavity and the dilution refrigerator resource occupation and consumption of performance test are reduced, which has great significance.

Description

Technical Field

[0001] This application relates to the field of quantum computer technology, and in particular to a method for obtaining a superconducting resonant cavity with target working performance and a quantum processor. Background Technology

[0002] like Figure 1 As shown, the quantum computer system includes a quantum processor (also called a quantum chip), a quantum computer measurement and control system, a quantum computer environment support system (also called a dilution refrigerator), and a quantum computer operating system that is integrated into a classical computer. The dilution refrigerator provides different temperature zones from room temperature to the lowest temperature by setting up cold plates. The different temperature zones are isolated by the cold plates, and the quantum processor is located in the lowest temperature zone of the dilution refrigerator.

[0003] Quantum components related to quantum chips all need to operate at low temperatures. These quantum components must undergo a design phase before fabrication, and after packaging, they can be subjected to actual low-temperature testing to obtain their performance parameters. However, tests have revealed that the performance parameters of these quantum components are highly dependent on the design and fabrication process. If the performance of the quantum components obtained from the tests does not meet the requirements, the quantum chip must be remade, which not only increases costs but also risks producing quantum components that still do not meet the requirements, and the fabrication cycle is also longer. Low-temperature performance testing of quantum components also requires a significant amount of valuable dilution cryogenic resources. Superconducting resonant cavities, as a key component of qubits on quantum chips, also face this problem.

[0004] Based on this, this application provides a method for obtaining a superconducting resonant cavity with target working performance and a quantum processor. Summary of the Invention

[0005] The purpose of this application is to provide a method and a quantum processor for obtaining the target operating performance of a superconducting resonator, aiming to solve the need for determining the operating performance of a superconducting resonator.

[0006] In a first aspect, this application provides a method for obtaining a superconducting resonant cavity with target operating performance, comprising: Obtain the operational variables describing the fabrication process of the superconducting resonator; obtain the morphological indicators of the superconducting resonator fabricated based on the operational variables, and establish a first relationship between the morphological indicators and the operational variables; obtain the working performance of the superconducting resonator with the morphological indicators in the working environment, and establish a second relationship between the working performance and the morphological indicators; obtain the target operational variable value corresponding to the target working performance based on the second and first relationships; fabricate the superconducting resonator based on the target operational variable value to obtain the superconducting resonator with the target working performance.

[0007] Optionally, in the method described above, the operating variable is the annealing operation in the fabrication process of a superconducting resonant cavity with a product morphology defined by a target size.

[0008] Optionally, the annealing operation may include laser annealing or one or a combination of other heat source annealing operations, as described above.

[0009] Optionally, when the annealing operation includes a combination of laser annealing and other heat source annealing operations, the superconducting resonant cavity prepared by the fabrication process based on the operating variables includes: first performing a laser annealing operation on the superconducting resonant cavity, and then performing a heat source annealing operation on the superconducting resonant cavity.

[0010] Optionally, in the method described above, the annealing operation affects the surface roughness of the superconducting resonant cavity's product morphology, and the operating performance of the superconducting resonant cavity refers to its quality factor.

[0011] Optionally, in the method described above, the first variation relationship refers to the relationship that the surface roughness of the superconducting resonant cavity product morphology decreases as the annealing time increases; the second variation relationship refers to the relationship that the superconducting resonant cavity factor increases as the surface roughness of the superconducting resonant cavity product morphology decreases.

[0012] Optionally, the surface roughness obtained by means of an optical microscope or an atomic force microscope is the average surface roughness, as described above.

[0013] Optionally, the superconducting resonant cavity includes a substrate, a central conductive band on the substrate, and ground-facing conductive bands symmetrically arranged on both sides of the central conductive band on the substrate. The width of the central conductive band is S, and the distance W between the ground-facing conductive bands and the central conductive band is W. The dimensions of the superconducting resonant cavity's product morphology are defined by the width S of the central conductive band and the distance W between the ground-facing conductive bands and the central conductive band. The operation further includes an etching operation. The method also includes obtaining a superconducting resonant cavity with a product morphology defined by a target size through an etching operation.

[0014] Optionally, the method described above can be used to obtain a superconducting resonator with a product morphology defined by a target size through etching operations, including: increasing W by etching the central conduction band to promote an increase in the quality factor of the superconducting resonator; and increasing W by etching the ground conduction band to suppress an increase in the quality factor of the superconducting resonator.

[0015] In the method described above, optionally, the target size of the superconducting resonator with a product morphology defined by the target size is determined by the characteristic impedance of the superconducting resonator.

[0016] Another embodiment of this application provides a quantum processor including a superconducting resonant cavity, wherein the superconducting resonant cavity is obtained by the method described above.

[0017] This application provides a method for obtaining a superconducting resonator with target operating performance. The method involves: obtaining operational variables describing the fabrication process of the superconducting resonator; obtaining the morphological indicators of the superconducting resonator fabricated based on the operational variables, and establishing a first relationship between the morphological indicators and the operational variables; obtaining the operating performance of the superconducting resonator with the morphological indicators in its working environment, and establishing a second relationship between the operating performance and the morphological indicators; obtaining the target operational variable value corresponding to the target operating performance based on the second and first relationships; and fabricating the superconducting resonator based on the target operational variable value to obtain the superconducting resonator with the target operating performance. The fabrication process based on the manipulated variable involves preparing the superconducting resonant cavity at room temperature. The first relationship between the product morphology index and the manipulated variable is established at room temperature. The working performance of the superconducting resonant cavity with the product morphology index is obtained in the working environment (i.e., the cryogenic environment), and a second relationship between the working performance and the product morphology index is established. Since the relationship between the target working performance and the manipulated variable is obtained through the first relationship between the product morphology index and the manipulated variable at room temperature and the second relationship between the working performance and the product morphology index in the cryogenic working environment, the target manipulated variable value corresponding to the target working performance can be obtained. The fabrication process based on the target manipulated variable value is then used to prepare the superconducting resonant cavity to obtain the superconducting resonant cavity with the target working performance. Throughout this process, the characterization data of the relationship summarized from the initial room temperature and cryogenic working environment tests can be used to quickly obtain the data for the cryogenic working environment in subsequent sample design and testing. Therefore, this significantly reduces the development and design cycle of the superconducting resonant cavity and the resource consumption and dilution of the cryogenic cooling system for performance testing. Attached Figure Description

[0018] This application will be further described below with reference to the accompanying drawings and specific embodiments.

[0019] Figure 1 This is a schematic diagram of the read bus and superconducting resonant cavity structure of the quantum processor provided in this application embodiment.

[0020] Figure 2 This is a schematic diagram of the structure of the superconducting resonant cavity provided in the embodiments of this application; Figure 3 This is a schematic diagram of a microwave transmission line circuit model; Figure 4 This is a schematic diagram of a method for obtaining the target working performance of a superconducting resonant cavity provided in this embodiment; Figure 5This is a schematic diagram showing the relationship between the S21 curve of the resonant cavity and the frequency of the transmitted signal; Figure 6 This is a schematic diagram showing the first sub-variable relationship between the average roughness of the substrate and annealing time. Figure 7 This is a schematic diagram illustrating the variation of the Q value, which characterizes the quality factor of a superconducting resonant cavity, with substrate roughness. Figure 8 This is a schematic diagram of the sampling for calculating the average roughness of the surface to be measured. Detailed Implementation

[0021] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0022] In the description of the embodiments of this application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0023] like Figure 1 As shown, Figure 1 A schematic diagram of the read bus 6 located on the quantum processor and the superconducting resonant cavity 5 coupled to it is provided. Figure 2 This is a schematic diagram of the superconducting resonant cavity 5, including a central conductor and a ground conductor disposed on a substrate. Ground conductors are symmetrically disposed on both sides of the central conductor. The dielectric constant of the substrate is... The width S of the center conductor on the substrate, the distance W between the ground conductor and the center conductor, and the spacing between the two ground conductors are 2b, where 2b = 2w + S = 2w + 2a, and S = 2a; the thickness of the substrate is h, and the thicknesses of the center conductor and the ground conductor are both t. Figure 3 This is a microwave transmission line circuit model. The microwave transmission line consists of multiple resonant cavities. Each resonant cavity model includes inductance, resistance, conductance, and capacitance. L' and R' are the inductance and resistance values ​​per unit length of the conductor, respectively, and G' and C' are the conductance and capacitance values ​​per unit length of the conductor relative to the reference line, respectively.

[0024] This application provides a method for obtaining a superconducting resonant cavity with target operating performance, the method comprising: Step S1: Obtain the operating variables describing the fabrication process of the superconducting resonant cavity.

[0025] Specifically, the operational variable can be any process step in the fabrication of the superconducting resonator, such as coating, etching, annealing, and cleaning. It is understood that coating is the process of depositing a superconducting thin film on a substrate to form the central conductor and ground conductor during the fabrication of the superconducting resonator; the coating time and conditions determine the thickness and quality of the superconducting film. Etching involves etching the superconducting film to form a superconducting resonator of the target size or to modify and adjust the performance of the superconducting resonator by etching a superconducting resonator of the target size. Annealing is the process of annealing a superconducting resonator with a pre-existing target size structure to further improve its performance. Annealing can change the surface morphology of a superconducting resonator with a pre-existing target size structure, or change the surface morphology and internal lattice structure of a superconducting resonator with a pre-existing target size structure; the surface morphology can be observed and recorded. Cleaning processes, such as fish food solution cleaning and ultrasonic cleaning, can improve the surface cleanliness of the superconducting resonator.

[0026] Step S2: Obtain the product morphology index of the superconducting resonant cavity prepared by the fabrication process based on the operating variable, and establish the first change relationship between the product morphology index and the operating variable.

[0027] Specifically, product morphology indicators include product dimensions, surface roughness, and cleanliness. As mentioned above, product dimensions are related to coating and etching operations. More specifically, coating affects the product's thickness, etching affects its width, and annealing affects its surface roughness.

[0028] The relationships between the above influencing factors and their effects can all be characterized by establishing data from multiple experiments, i.e., the first variation relationship. It should be noted that the first variation relationship is constructed based on measurements of the morphological indicators of the fabricated superconducting resonant cavity. This can be understood as the superconducting resonant cavity being fabricated when it has a recognizable structural morphology, or it can be described as a superconducting resonant cavity with a product structure defined by a target size.

[0029] For example, the first relationship reflects the causal relationship between the operational variable and the operational result, which follows physical laws. This relationship can be linear or nonlinear, but undoubtedly, there is a one-to-one correspondence between the operational variable and the product morphology index. For example, the first relationship between coating thickness and coating time is a simple linear increase; the coating thickness is proportional to the coating time, and the two are in a one-to-one correspondence. After etching the coating layer to obtain the product width, the next step is to investigate how to further fine-tune the target size of the product to obtain a new size after obtaining the initially fabricated superconducting resonator with the target size defined by the etching process. The first relationship is the relationship between the fine-tuning process and the new size; the two are not linear, but there is a one-to-one correspondence between them. The first relationship between the cleaning process and the cleanliness of the product surface after cleaning is initially linear, and then remains constant. Annealing processes can affect the roughness of both the substrate and the superconducting thin film in a superconducting resonant cavity. Therefore, the first sub-relationship between the annealing process and the surface roughness of the product after annealing can include a first sub-relationship of substrate surface roughness with respect to the annealing process and a second sub-relationship of superconducting thin film surface roughness with respect to the annealing process. Experiments show that as the annealing time increases, the substrate roughness initially gradually decreases and becomes smoother; excessively long annealing times lead to no change in substrate surface roughness. Conversely, as the annealing time increases, the surface roughness of the superconducting thin film initially remains unchanged; excessively long annealing times result in severe surface roughness increases. The above process describes the first and second sub-relationships.

[0030] Step S3: Obtain the working performance of the superconducting resonant cavity with product morphology indicators located in the working environment, and establish a second relationship between the working performance and the product morphology indicators.

[0031] Specifically, the operating performance of a superconducting resonant cavity refers to its cavity frequency, quality factor, etc., among which the quality factor of the resonant cavity... It describes the loss caused by the inherent loss mechanism and is a dimensionless physical quantity. Definition ω is the resonant frequency, E stored E is the energy stored in the resonant cavity. loss The rate of energy dissipation within the resonant cavity, under external load conditions. Qi is the internal quality factor, Q e The external quality factor is κ = Q. The coupling coefficient between the resonant cavity and the external circuit is given by κ = Q. i / Q e .

[0032] Cavity frequency ω=1 / , and the length of the central conductor and capacitor related.

[0033] The cavity frequency of a resonant cavity determines the frequency of the signal it can transmit, while its quality factor determines its signal transmission performance. When transmitting a signal, the resonant cavity is capacitively coupled to the transmission line, with an amplitude of V. in The signal enters from one port of the transmission line and exits from the other port with an amplitude V. out If the signal is transmitted in the form of S, the corresponding transmission coefficient can be obtained. 21 =V out / V in .

[0034] Resonant cavities have higher transmission efficiency for signals close to their frequency. Figure 5 The diagram shows the relationship between the S21 curve of the resonant cavity and the frequency of the transmitted signal. Figure 5 It can be seen that it can be achieved through S 21 The curve can be used to determine the frequency of the resonant cavity. A higher quality factor Q indicates better selectivity of the resonant cavity for the resonant frequency, meaning higher transmission efficiency for signals close to the resonant frequency. Therefore, the frequency can be determined by S... 21 The coefficients can be used to obtain the cavity frequency and quality factor of the resonant cavity.

[0035]

[0036] in Qi represents the internal quality factor, Q c The external quality factor is represented by f, which is the frequency to be scanned and is a variable; fr represents the cavity frequency of the superconducting resonant cavity; i is an imaginary number; and Ф represents the phase. Therefore, the operating performance of a superconducting resonator with product morphology indicators located in the working environment can be obtained. A second relationship between the operating performance and the product morphology indicators can be established directly based on the operating performance of the superconducting resonator with each product morphology indicator. This second relationship is the correspondence between each set of product morphology indicators and the operating performance affected by that set of indicators. Each set of product morphology indicators describes a morphological feature of the product.

[0037] For example, the values ​​of S and W in a superconducting resonant cavity affect the characteristic impedance of the superconducting resonant cavity. , L I and C I L represents the inductance and capacitance per unit length, respectively. I and C I Related to the dielectric constants of W, S, and the carrier, the characteristic impedance of a superconducting resonant cavity on a commonly used silicon substrate is determined by the magnitude and ratio of S and W of the superconducting resonant cavity. For example, when the characteristic impedance is 50 ohms, S:W:S can be set to 2:4:2, in meters (m). Here, W and S are a set of product morphology indicators used to describe the dimensional characteristics of the product.

[0038] For another example, the quality factor of a superconducting resonator is related to the roughness of both the substrate and the superconducting thin film. Experiments show a strong correlation between the quality factor and the substrate roughness. The substrate roughness is on the order of micrometers (µm). Even a slight linear change in substrate roughness leads to a significant change in the quality factor of the superconducting resonator, on the order of millions of micrometers. Furthermore, the quality factor increases as the substrate roughness decreases; that is, the lower the substrate roughness, the smoother the substrate surface. The quality factor remains relatively unchanged with slight variations in the roughness of the superconducting thin film. However, when the superconducting thin film develops surface bumps due to heating, the quality factor of the superconducting resonator drops sharply. At this point, the substrate roughness and the superconducting thin film roughness constitute a set of product morphology indicators used to describe the roughness of the product.

[0039] Step S4: Obtain the target operating variable value corresponding to the target working performance based on the second change relationship and the first change relationship.

[0040] Specifically, since the first relationship is a one-to-one correspondence between the operational variable and the product appearance index of the operational result, and the second relationship is a one-to-one correspondence between the working performance and the product appearance index, the corresponding target operational variable value can be obtained based on the second relationship and the first relationship for the target working performance.

[0041] Step S5: Based on the fabrication process of the target operating variable value, fabricate a superconducting resonant cavity to obtain the superconducting resonant cavity with the target working performance.

[0042] The fabrication process based on the manipulated variable involves preparing the superconducting resonant cavity at room temperature. The first relationship between the product morphology index and the manipulated variable is established at room temperature. The working performance of the superconducting resonant cavity with the product morphology index is obtained in the working environment (i.e., the cryogenic environment), and a second relationship between the working performance and the product morphology index is established. This process takes place in the working environment (i.e., the cryogenic environment). Since the relationship between the target working performance and the manipulated variable is obtained through the first relationship between the product morphology index and the manipulated variable at room temperature and the second relationship between the working performance and the product morphology index in the cryogenic working environment, the target manipulated variable value corresponding to the target working performance can be obtained. The fabrication process based on the target manipulated variable value prepares the superconducting resonant cavity to obtain the superconducting resonant cavity with the target working performance. Throughout this process, the characterization data of the relationship summarized from the initial room temperature and cryogenic working environment tests can be used to quickly obtain the cryogenic working environment data in subsequent sample design and testing. Therefore, this can reduce the development and design cycle of the superconducting resonant cavity and the resource occupation and consumption of the dilution refrigerator for performance testing, which is of great significance.

[0043] As one embodiment of this application, the operating variable is the annealing operation in the fabrication process of a superconducting resonator with a product morphology defined by a target size. The annealing operation includes one or a combination of laser annealing and other heat source annealing operations. When the annealing operation includes a combination of laser annealing and other heat source annealing operations, the superconducting resonator fabricated based on the operating variable includes: first performing laser annealing on the superconducting resonator, and then performing annealing with other heat source operations. The annealing operation affects the surface roughness of the superconducting resonator's product morphology, and the operating performance of the superconducting resonator refers to its quality factor.

[0044] During implementation, the annealing process can affect the roughness of both the substrate and the superconducting thin film of the superconducting resonant cavity. Therefore, the first relationship between the annealing process and the surface roughness of the product after annealing can include a first sub-relationship of substrate surface roughness with respect to the annealing process and a second sub-relationship of superconducting thin film surface roughness with respect to the annealing process. Experiments show that, as Figure 6 As shown, as the annealing time increases, the roughness of the substrate initially decreases gradually and becomes smooth. However, if the annealing time is too long, the substrate surface will not become smooth but will become rougher. This is manifested in the average roughness value first decreasing and then increasing with the annealing time. In other words, the roughness value increases, which can be understood as the product being damaged. As the annealing time increases, the surface roughness of the superconducting thin film does not change initially. However, if the annealing time is too long, the surface roughness of the aluminum film will become severe and increase.

[0045] In one embodiment of this application, the annealing operation affects the surface roughness of the superconducting resonant cavity's product morphology, including the roughness of the substrate and the roughness of the superconducting thin film. The operating performance of the superconducting resonant cavity refers to its quality factor. The quality factor of the superconducting resonator is related to the roughness of the substrate and the superconducting thin film. Experiments show that the quality factor of the superconducting resonator is strongly correlated with the roughness of the substrate. The substrate roughness is on the order of micrometers (µm). Even a slight linear change in the substrate roughness leads to a large change in the quality factor of the superconducting resonator, on the order of millions. Furthermore, the quality factor of the superconducting resonator increases as the substrate roughness decreases; that is, the lower the substrate roughness, the smoother the substrate surface. The quality factor remains largely unchanged with slight changes in the roughness of the superconducting thin film. However, when the roughness of the superconducting thin film exhibits surface bumps due to heating, the quality factor of the superconducting resonator drops sharply. At this point, the roughness of the substrate and the roughness of the superconducting thin film constitute a set of product morphology indicators used to describe the roughness of the product. The first relationship refers to the relationship that the surface roughness of the superconducting resonant cavity decreases as the annealing time increases; the second relationship refers to the relationship that the coefficient of the superconducting resonant cavity increases as the surface roughness of the superconducting resonant cavity decreases.

[0046] It should be noted that the surface roughness is characterized by the average surface roughness Ra and / or roughness variance Rb obtained by optical microscopy or atomic force microscopy. Ra is defined as the arithmetic mean of the average line of the measured surface profile over a sampling length, and its unit is generally nm. Figure 8 The diagram shown illustrates the sampling process for calculating the average roughness of the surface under test. The calculation process for the average roughness Ra is as follows: Ra=((Yp1+Yp2+..Ypn)+(lYv1l+lYv2+...lYvnl)) / 2n

[0047] Wherein, the value of the sampling point above the measured surface is Ypn, the value below the measured surface is the absolute value of Yvn, and n is the number of sampling points.

[0048] As one embodiment of this application, the operation further includes an etching operation; the method further includes obtaining a superconducting resonant cavity with a target size-defined product morphology through etching, which includes: increasing W by etching the central conduction band to promote an increase in the quality factor of the superconducting resonant cavity; and increasing W by etching the ground conduction band to suppress an increase in the quality factor of the superconducting resonant cavity. The target size of the superconducting resonant cavity with a target size-defined product morphology is determined by the characteristic impedance of the superconducting resonant cavity. Increasing W by etching the central conduction band to promote an increase in the quality factor of the superconducting resonant cavity; and increasing W by etching the ground conduction band to suppress an increase in the quality factor of the superconducting resonant cavity, are microfabrication processes of the superconducting resonant cavity.

[0049] As another embodiment of this application, based on the same inventive communication, this application proposes a quantum processor, including a superconducting resonant cavity, which is obtained by the method described above. Its specific implementation and the technical effects achieved are similar to those described in the above method embodiments, and some details will not be repeated here.

[0050] It is understood that the specific examples in this specification are only intended to help those skilled in the art better understand the implementation of this application, and are not intended to limit the scope of protection of this application.

[0051] It is understood that in the various embodiments of this specification, the sequence number of each process does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of this application.

[0052] It is understood that the various implementation methods described in this specification can be implemented individually or in combination, and this application does not limit them.

[0053] Unless otherwise stated, all technical and scientific terms used in this specification have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of this specification. The term "and / or" as used in this specification includes any and all combinations of one or more of the associated listed items. The singular forms "a," "the," and "the" as used in this specification and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0054] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this specification.

[0055] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the embodiments described above can be referred to the corresponding processes in other embodiments, and will not be repeated here.

[0056] In the several embodiments provided in this specification, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0057] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of the technical solution in this application, depending on actual needs.

[0058] In addition, the functional units in the various embodiments of this specification can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0059] If a function is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this specification, or the part that contributes to the prior art, or part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this specification. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0060] The above are merely specific embodiments described in this specification, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this specification should be included within the scope of protection of this specification. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for obtaining the target performance of a superconducting resonant cavity, characterized in that, The method includes: Obtain the operational variables that describe the fabrication process of the superconducting resonant cavity; Obtain the product morphology index of the superconducting resonant cavity fabricated by the fabrication process based on the operating variable, and establish the first variation relationship of the product morphology index with the operating variable. The working performance of a superconducting resonant cavity with product morphology indicators located in the working environment is obtained, and a second relationship between the working performance and the product morphology indicators is established. The target operational variable values ​​corresponding to the target performance are obtained based on the second and first change relationships. A superconducting resonant cavity with target operating performance is prepared using a fabrication process based on the target operating variable value.

2. The method according to claim 1, characterized in that, The manipulated variable is the annealing operation in the fabrication process of a superconducting resonant cavity with a product morphology defined by a target size.

3. The method according to claim 2, characterized in that, The annealing operation includes one or a combination of laser annealing or other heat source annealing operations.

4. The method according to claim 3, characterized in that, When the annealing operation includes a combination of laser annealing and other heat source annealing operations, the superconducting resonant cavity prepared by the fabrication process based on the operating variables includes: first performing a laser annealing operation on the superconducting resonant cavity, and then performing a heat source annealing operation on the superconducting resonant cavity.

5. The method according to claim 2, characterized in that, The annealing process affects the surface roughness of the superconducting resonant cavity's product morphology, and the working performance of the superconducting resonant cavity refers to its quality factor.

6. The method according to claim 5, characterized in that, The first relationship refers to the relationship that the surface roughness of the superconducting resonant cavity decreases as the annealing time increases; the second relationship refers to the relationship that the coefficient of the superconducting resonant cavity increases as the surface roughness of the superconducting resonant cavity decreases.

7. The method according to claim 5, characterized in that, The surface roughness is the average surface roughness obtained by optical microscope or atomic force microscope equipment.

8. The method according to any one of claims 2-7, characterized in that, The superconducting resonant cavity includes a substrate, a central conductive band on the substrate, and ground-facing conductive bands symmetrically arranged on both sides of the central conductive band on the substrate. The width of the central conductive band is S, and the distance W between the ground-facing conductive bands and the central conductive band is W. The dimensions of the superconducting resonant cavity's product morphology are defined by the width S of the central conductive band and the distance W between the ground-facing conductive bands and the central conductive band. The operation further includes an etching operation. The method further includes obtaining a superconducting resonant cavity with a product morphology defined by a target size through an etching operation.

9. The method according to claim 8, characterized in that, Obtaining a superconducting resonant cavity with a product morphology defined by a target size through etching operations includes: increasing W by etching the central conduction band to promote an increase in the quality factor of the superconducting resonant cavity; and increasing W by etching the ground conduction band to suppress an increase in the quality factor of the superconducting resonant cavity.

10. The method according to any one of claims 2 or 9, characterized in that, The target size of a superconducting resonator with a product morphology limited by a target size is determined by the characteristic impedance of the superconducting resonator.

11. A quantum processor, comprising a superconducting resonant cavity, characterized in that, The superconducting resonant cavity is obtained by the method of any one of claims 1-10.

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