A power-generating glass component for 5G communication and its preparation method

Abstract

This invention relates to a power-generating glass component for 5G communication and its preparation method. The component is characterized by the following: a patterned transparent conductive layer (2), an n-type semiconductor film layer (3), CdS and CdTe semiconductor layers (4), a p-type semiconductor film layer (5), and a patterned back electrode layer (6) are sequentially arranged from bottom to top on a high-transparency ultra-white glass substrate (1). The transparent conductive layer (2) is one of FTO, ITO, or AZO; the n-type semiconductor film layer (3) is MgZnO; the semiconductor layer (4) is a CdS and CdTe semiconductor layer; the p-type semiconductor film layer (5) is a ZnTe:Cu p-type semiconductor film layer; and the back electrode layer (6) is Mo, Al, or Cr. Advantages of this invention: The preparation method is simple and easy to operate, facilitating large-scale industrial production; the resulting power-generating glass component for 5G communication has an average loss of 4.5-4.9 dB in the 2-5 GHz communication band, not only enabling power generation but also facilitating 5G signal transmission.

Description

Technical Field

[0001] This invention belongs to the field of 5G communication technology and relates to a power-generating glass component for 5G communication and its preparation method. Background Technology

[0002] With the development of 5G communication technology, the metal film layer of traditional power-generating glass exhibits significant attenuation of 5G high-frequency communication signals, with a loss of approximately 50 dB in the 2-5 GHz frequency band. In cities where glass curtain walls are widely used, the complex electromagnetic environment poses a significant challenge to the deployment of high-frequency communication and indoor coverage. Therefore, the research and development of power-generating glass for 5G communication has substantial application value. However, research in this field is relatively scarce, necessitating further investigation and the development of new fabrication methods to enhance its application value. Summary of the Invention

[0003] The purpose of this invention is to overcome the shortcomings of existing technologies and provide a power-generating glass for 5G communication and its preparation method. This method involves designing a power-generating glass film structure that facilitates signal transmission and employing a special coating process to prepare power-generating glass with high 5G signal transmittance.

[0004] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0005] A power generation glass assembly for 5G communication is characterized by having the following structure: a patterned (or integrally patterned) transparent conductive layer (2), an n-type semiconductor film layer (3), a CdS and CdTe semiconductor layer (4), a p-type semiconductor film layer (5), and a patterned (or integrally patterned) back electrode layer (6) are sequentially arranged from bottom to top on a high-transparency ultra-white glass substrate (1).

[0006] Furthermore, the n-type semiconductor film layer (3), the CdS and CdTe semiconductor layers (4) and the p-type semiconductor film layer (5) are all film layers with patterned (or overall patterned) structures.

[0007] Furthermore, the transparent conductive layer (2) is one of FTO, ITO, and AZO.

[0008] Furthermore, the n-type semiconductor film (3) is MgZnO.

[0009] Furthermore, the semiconductor layer (4) is a CdS and CdTe semiconductor layer.

[0010] Furthermore, the p-type semiconductor film (5) is a p-type semiconductor film of ZnTe:Cu.

[0011] Furthermore, the back electrode layer (6) is Mo, Al or Cr.

[0012] Furthermore, the patterned structure is in the shape of a cross, and the length and width dimensions of the structure are the communication wavelength λ / 10 – λ.

[0013] Furthermore, the patterned structure can be filled with insulating high and low refractive index film systems such as SiO2 / SiN, SiO2 / ZrO2, SiO2 / TiO2, SiO2 / AL2O3, and porous AlPO4 / SiN, which can effectively enable the transmission of visible light.

[0014] Furthermore, the oxide film layer (such as SiO2, ZrO2, TiO2, AL2O3, porous AlPO4, etc.) filling the cross-shaped area is an oxygen-deficient film layer, or an oxygen barrier film of about 10 nanometers is coated on the groove wall of the cross-shaped area using atomic layer deposition.

[0015] A method for preparing a power-generating glass component for 5G communication, characterized by comprising the following steps:

[0016] (A) Clean and activate the glass substrate;

[0017] (B) First, paste a cross-shaped high-temperature tape or high-temperature resistant ink on the glass substrate, then deposit a layer of FTO, ITO or AZO film as a transparent conductive layer, and then remove the high-temperature tape or high-temperature resistant ink, or remove the high-temperature tape or high-temperature resistant ink after the entire coating process is completed to achieve a fully open structure.

[0018] (C) An alternating antireflective coating with a combination of high and low refractive indices (SiO2 / SiN, SiO2 / ZrO2, SiO2 / TiO2, SiO2 / AL2O3, porous AlPO4 / SiN, etc.) is deposited in the cross-shaped grooves made in step (B) by magnetron sputtering. The transparent conductive layer is protected by photoresist or high-temperature resistant ink to prevent the alternating antireflective coating from being placed on the transparent conductive layer.

[0019] (D) MgZnO with a thickness of 80-150 nm is deposited on the coating obtained in step (C) by magnetron sputtering;

[0020] (E) CdS and CdTe semiconductor layers are deposited on the coating obtained in step (D) using the near-space sublimation method;

[0021] (F) A ZnTe:Cu film with a thickness of 10-50 nm is prepared on the coating obtained in step (E) by magnetron sputtering as a p-type semiconductor film layer;

[0022] (G) Apply a cross-shaped high-temperature tape or high-temperature resistant ink to the coating obtained in step (F), then deposit Mo, Al or Cr as a back electrode layer using magnetron sputtering, and then remove the high-temperature tape or high-temperature resistant ink.

[0023] Furthermore, a method for preparing a power-generating glass component for 5G communication can also be as follows:

[0024] (1) Clean and activate the glass substrate;

[0025] (2) Deposit a layer of FTO, ITO or AZO film on the glass substrate as a transparent conductive layer;

[0026] (4) MgZnO is deposited on the coating obtained in step (3) by magnetron sputtering;

[0027] (5) Using the near-space sublimation method, CdS and CdTe semiconductor layers are deposited on the coating obtained in step (4);

[0028] (6) A ZnTe:Cu film with a thickness of 10-50 nm is prepared on the coating obtained in step (5) by magnetron sputtering as a p-type semiconductor film layer;

[0029] (7) Mo, Al or Cr are deposited as a back electrode layer on the coating obtained in step (6) by magnetron sputtering, with a thickness of 200-300 nm.

[0030] (8) A cross shape is formed on the entire film layer on the glass substrate by laser etching.

[0031] Furthermore, the further solution after step (8) can be: depositing alternating antireflection films of insulating high and low refractive index combinations such as SiO2 / SiN, SiO2 / ZrO2, SiO2 / TiO2, SiO2 / AL2O3, and porous AlPO4 / SiN in the cross-shaped groove after laser etching by magnetron sputtering.

[0032] Furthermore, the AZO transparent conductive layer is prepared using a high-purity AZO (zinc aluminum oxide) target with a purity of 99.99%, wherein the ZnO content is 97.5-98.5% and the Al2O3 content is 1.5-2.5%; the intrinsic vacuum degree of the cavity is 6.0 x 10⁻⁶. -6 Pa, sputtering power of 6000-8000W, voltage of 560-620V, Ar (argon) flow rate at ignition of 200sccm, and maintenance temperature of 3.0-3.5x10 -3 The coating is performed under pressure from the torr and the substrate holder is heated to 200℃.

[0033] Furthermore, the ITO transparent conductive layer is prepared using a high-purity ITO target with a purity of 99.99%, and the intrinsic vacuum of the cavity is 5.5 x 10⁻⁶. -6 The sputtering process is performed using a DC power supply with a sputtering power of 3000-4000W and a voltage of 500-570V. The Ar (argon) flow rate is 200 sccm at ignition and maintained at 3.5-4.0 x 10⁻⁶ ppm. -3 The coating is performed under pressure from the torr and the substrate holder is heated to 200℃.

[0034] Furthermore, the preparation method of the n-type semiconductor film (3) MgZnO is as follows: the target material is high-purity (purity of 99.99%) MgZnO target material, and the bulk vacuum is 6.0 x 10 -6 The sputtering power was 4900-5100 W, and the voltage was 600 V. The sample entered the chamber, and the Ar flow rate at ignition was 200 sccm, maintaining a pressure of 2.0 x 10⁻⁶. -3 -2.5x10 -3 The sample reciprocates with the substrate holder to control the film thickness and uniformity. The substrate is heated to 300-400℃ for film deposition, and the thickness of the MgZnO film is 80-150nm.

[0035] Furthermore, the preparation method of the CdS and CdTe semiconductor layers is as follows: the bulk vacuum of the entire coating vacuum chamber is 6.0 x 10⁻⁶. -2 Pa is heated by uniform infrared radiation, and the cavity is kept at 450-550℃. Ar gas is repeatedly injected into the cavity and vacuum is repeatedly evacuated to reduce the concentration of contaminants in the cavity. The number of cycles is no less than 3. A 30-80nm CdS layer is first deposited by sublimating CdS through a heat source. The baffle is opened to block the CdS sublimation port, the CdTe heat source is opened, and then a CdTe layer of about 1-5μm is deposited.

[0036] Furthermore, the preparation method of the p-type semiconductor film ZnTe:Cu is as follows: the sputtering chamber is evacuated to 6.0 x 10⁻⁶. -6 –5.0×10 -5 Pa was sputtered using a two-target system, ZnTe and Cu, with a purity of 99.99%. The sputtering method was DC magnetron sputtering, using a 500W DC power supply. The Ar flow rate at start-up was 100 sccm, and the vacuum level was maintained at 2.5 x 10⁻⁶. - 3 torr, to perform sputtering coating.

[0037] Furthermore, the preparation method of the back electrode layer Mo, Al, or Cr is as follows: the sputtering chamber is evacuated to 6.0 x 10⁻⁶. -6 – 5.0×10 -5Pa, the target material is a metallic Mo target, Al target, or Cr target, with a purity of 99.99%; the magnetron sputtering method used is DC magnetron sputtering, with a DC power supply of 300W, an Ar flow rate of 100 sccm at ignition, and a vacuum level maintained at 2.5 x 10⁻⁶. - 3 Torr is used for sputtering to deposit a metal thin film with a thickness of 200-300nm.

[0038] Furthermore, the cleaning and activation method is as follows: the surface is cleaned sequentially with alkaline solution and then with acid solution to remove impurities.

[0039] Furthermore, the alkaline cleaning step is as follows: soak in a mixed solution of 5%-10% sodium hydroxide in water and ethanol for 2-3 minutes, and then rinse with deionized water.

[0040] Furthermore, the acid cleaning step is as follows: soak in a 3%-6% hydrochloric acid solution for 3-5 minutes, rinse with deionized water, and dry.

[0041] Furthermore, the volume ratio of water to ethanol in the sodium hydroxide-water-ethanol mixed solution is 1:5.

[0042] The beneficial effects of this invention are:

[0043] The preparation method of this invention is simple and easy to operate, which is conducive to large-scale industrial production. The resulting power-generating glass component for 5G communication has an average loss of 4.5-4.9 dB in the 2-5 GHz communication frequency band. It can not only realize the power generation function, but also facilitate the transmission of 5G signals, achieve effective penetration of 5G signals, and achieve partial transmission of visible light. It is in line with the future industrial development direction and is conducive to promoting the technological upgrading of related industries. Attached Figure Description

[0044] Figure 1 This is a schematic diagram of a power-generating glass assembly for 5G communication.

[0045] Figure 2 This is a structural diagram of the electrode patterned power-generating glass of Embodiment 1 of the present invention;

[0046] Figure 3 This is a diagram of the patterned power-generating glass structure with all the openings in Embodiment 2 of the present invention;

[0047] Figure 4 This is a photograph of a patterned high-temperature tape construction according to Embodiment 2 of the present invention. Detailed Implementation

[0048] The following is combined with Figure 1 Further explanation of the present invention:

[0049] A method for preparing a power-generating glass component for 5G communication, the specific implementation steps of which are as follows: Example 1

[0050] (1) Immerse the high-transparency ultra-white glass substrate in a 10% sodium hydroxide solution of water and ethanol (the volume ratio of water to ethanol is 1:5) for 2 minutes, then rinse with deionized water; then immerse it in a 6% hydrochloric acid solution for 3 minutes, then rinse with deionized water and dry.

[0051] (2) An AZO transparent conductive layer 2 (resistance less than 12Ω / □) is deposited on the upper surface of a high-transparency ultra-white glass substrate 1. Photoresist is coated on the entire upper surface of the AZO transparent conductive layer 2. Then, the AZO transparent conductive layer is etched by laser etching to make it present a cross-shaped structure. The length and width dimensions of the structure are the communication wavelength λ / 10 –λ. The AZO transparent conductive layer is prepared using a high-purity AZO (zinc aluminum oxide) target material with a purity of 99.99%, of which the ZnO content is 98% and the Al2O3 content is 2.0%. The intrinsic vacuum degree of the cavity is 6.0 x 10⁻⁶. -6 The sputtering power was 7000W, and the voltage was 600V; the Ar (argon) flow rate at ignition was 200sccm, and the maintenance temperature was 3.0x10⁻¹⁰. -3 The pressure of the torr, the substrate holder heating temperature is 200℃, and the coating is performed;

[0052] (3) By low-power magnetron sputtering, a SiO2 layer is first deposited in a cross-shaped groove, followed by a SiN layer, and then the photoresist is removed.

[0053] (4) A MgZnO n-type semiconductor film 3 is deposited on the coating obtained in step (3) by magnetron sputtering. The target material is a high-purity MgZnO target with a purity of 99.99%, and the bulk vacuum is 6.0 x 10⁻⁶. -6 The sputtering power was 5000 W, the voltage was 600 V, the sample entered the chamber, the Ar flow rate at ignition was 200 sccm, and the pressure was maintained at 2.5 x 10⁻⁶. -3 The sample reciprocates with the substrate holder to control the film thickness and uniformity. The substrate is heated to 400 ℃ for film deposition, and the thickness of the MgZnO film is 100 nm.

[0054] (5) Using the near-space sublimation method, CdS and CdTe semiconductor layers 4 are deposited on the coating obtained in step (4); the bulk vacuum of the entire coating vacuum chamber is 6.0 x 10⁻⁶. -2Pa, through uniform infrared radiation heating, the cavity is basically maintained at 500°C. Ar gas is repeatedly injected into the cavity and vacuum is repeatedly evacuated to reduce the concentration of contaminants in the cavity. The number of cycles is 3. CdS is sublimated by the heat source to first deposit a 50nm CdS layer. The baffle is opened to block the CdS sublimation port. The CdTe heat source is opened and then a 1.4μm CdTe layer is deposited.

[0055] (6) A ZnTe:Cu p-type semiconductor film 5 is deposited on the coating obtained in step (5), and the sputtering chamber is evacuated to 6.0 x 10⁻⁶. -6 Pa was sputtered using a two-target system, ZnTe and Cu, with a purity of 99.99%. The process involved DC sputtering with a 500W DC power supply, an Ar flow rate of 100 sccm at ignition, and a vacuum maintained at 2.5 x 10⁻⁶. -3 torr, sputtering deposition was performed to deposit a ZnTe:Cu thin film with a thickness of 30nm;

[0056] (7) A back electrode layer 5 is formed on the coating obtained in step (6). The back electrode layer is made of Mo and is deposited by magnetron sputtering. The sputtering chamber is evacuated to 6.0 x 10⁻⁶. -6 The target material was a metallic Mo target with a purity of 99.99%; DC magnetron sputtering was used, with a DC power supply of 300W, an Ar flow rate of 100 sccm at ignition, and a vacuum level maintained at 2.5 x 10⁻⁶. -3 The process involves sputtering a 200nm thick metal film onto the back electrode layer. Photoresist is then applied to the entire surface of the back electrode layer, followed by laser etching to create a cross-shaped structure with a length of 17mm and a width of 11mm. A layer of SiO2 is then deposited within the cross-shaped groove using low-power magnetron sputtering, followed by a SiN layer. The photoresist is then removed, yielding a 5G communication power-generating glass component with an average loss of 4.9 dB in the 2-5GHz communication band. Example 2

[0057] (1) Immerse the high-transparency ultra-white glass substrate in a 5% sodium hydroxide solution mixed with water and ethanol (the volume ratio of water to ethanol is 1:5) for 3 minutes, then rinse with deionized water; then immerse it in a 3% hydrochloric acid solution for 5 minutes, then rinse with deionized water and dry.

[0058] (2) A patterned high-temperature adhesive tape is pasted onto the upper surface of the high-transparency ultra-white glass substrate 1, and then an AZO transparent conductive layer 2 (resistance less than 12Ω / □) is deposited; the AZO transparent conductive layer is prepared using a high-purity AZO (zinc aluminum oxide) target material with a purity of 99.99%, of which the ZnO content is 97.5% and the Al2O3 content is 1.5%; the intrinsic vacuum degree of the cavity is 6.0x10-6 Pa, sputtering power of 6800W, voltage of 580V, Ar (argon) flow rate at ignition of 200sccm, maintenance at 3.0x10 -3 The pressure of the torr, the substrate holder heating temperature is 200℃, and the coating is performed;

[0059] (3) A MgZnO n-type semiconductor film 3 is deposited on the coating obtained in step (2) by magnetron sputtering. The target material is a high-purity MgZnO target with a purity of 99.99%, and the bulk vacuum is 6.0 x 10⁻⁶. -6 The sputtering power was 4900 W, the voltage was 600 V, the sample entered the chamber, the Ar flow rate at ignition was 200 sccm, and the pressure was maintained at 2.0 x 10⁻⁶ Pa. -3 The sample reciprocates with the substrate holder to control the film thickness and uniformity. The substrate is heated to 300℃ for film deposition, and the thickness of the MgZnO film is 80nm.

[0060] (4) Remove the high-temperature tape after plating is completed;

[0061] (5) Using the near-space sublimation method, CdS and CdTe semiconductor layers 4 are deposited on the coating obtained in step (4); the bulk vacuum of the entire coating vacuum chamber is 1.0. Pa, through uniform infrared radiation heating, the cavity is basically maintained at 450°C. Ar gas is repeatedly injected into the cavity and vacuum is repeatedly evacuated to reduce the concentration of contaminants in the cavity. The number of cycles is 3. CdS is sublimated by the heat source to first deposit a 30nm CdS layer. The baffle is opened to block the CdS sublimation port. The CdTe heat source is opened and then a 2.0μm CdTe layer is deposited.

[0062] (6) A ZnTe:Cu p-type semiconductor film 5 is deposited on the coating obtained in step (5), and the sputtering chamber is evacuated to 9.0 x 10⁻⁶. -6 Pa was sputtered using a two-target system, ZnTe and Cu, with a purity of 99.99%. The process involved DC sputtering with a 500W DC power supply, an Ar flow rate of 100 sccm at ignition, and a vacuum maintained at 2.5 x 10⁻⁶. -3 torr, sputtering deposition was performed to deposit a ZnTe:Cu thin film with a thickness of 10nm;

[0063] (7) A back electrode layer 5 is formed on the coating obtained in step (6). The back electrode layer is made of Mo and is deposited by magnetron sputtering. The sputtering chamber is evacuated to 9.0 x 10⁻⁶. -6 The target material was a metallic Mo target with a purity of 99.99%; DC magnetron sputtering was used, with a DC power supply of 300W, an Ar flow rate of 100 sccm at ignition, and a vacuum level maintained at 2.5 x 10⁻⁶. -3The metal thin film with a thickness of 300 nm is deposited by sputtering. Then, the Mo electrode layer is etched by laser etching to make it present a cross-shaped structure with a length of 17 mm and a width of 11 mm, thus obtaining a power generation glass component for 5G communication with an average loss of 4.8 dB in the 2-5 GHz communication band. Example 3

[0064] (1) Immerse the high-transparency ultra-white glass substrate in a 10% sodium hydroxide solution of water and ethanol (the volume ratio of water to ethanol is 1:5) for 3 minutes, then rinse with deionized water; then immerse it in a 6% hydrochloric acid solution for 3 minutes, then rinse with deionized water and dry.

[0065] (2) A patterned high-temperature adhesive tape is pasted onto the upper surface of the high-transparency ultra-white glass substrate 1, and then an ITO transparent conductive layer 2 (resistance less than 16Ω / □) is deposited; the ITO transparent conductive layer is prepared using a high-purity ITO target material with a purity of 99.99%, and the intrinsic vacuum degree of the cavity is 5.5x10 -6 The sputtering process was performed using a DC power supply at 3000W and 500V. The Ar (argon) flow rate was 200 sccm at ignition and maintained at 3.5 x 10⁻⁶ ppm. -3 The pressure of the torr, the substrate holder heating temperature is 200℃, and the coating is performed;

[0066] (3) A MgZnO n-type semiconductor film 3 is deposited on the coating obtained in step (2) by magnetron sputtering. The target material is a high-purity MgZnO target with a purity of 99.99%, and the bulk vacuum is 6.0 x 10⁻⁶. -6 The sputtering power was 5000 W, the voltage was 600 V, the sample entered the chamber, the Ar flow rate at ignition was 200 sccm, and the pressure was maintained at 2.0 x 10⁻⁶. -3 The sample reciprocates with the substrate holder to control the film thickness and uniformity. The substrate is heated to 300℃ for film deposition, and the thickness of the MgZnO film is 80nm.

[0067] (4) Remove the high-temperature tape after plating is completed;

[0068] (5) Using the near-space sublimation method, CdS and CdTe semiconductor layers 4 are deposited on the coating obtained in step (4); the bulk vacuum of the entire coating vacuum chamber is 6.0 x 10⁻⁶. -2 Pa, through uniform infrared radiation heating, the cavity is basically maintained at 450°C. Ar gas is repeatedly injected into the cavity and vacuum is repeatedly evacuated to reduce the concentration of contaminants in the cavity. The number of cycles is 3. CdS is sublimated by the heat source to first deposit a 50nm CdS layer. The baffle is opened to block the CdS sublimation port. The CdTe heat source is opened and then a 1.4μm CdTe layer is deposited.

[0069] (6) A ZnTe:Cu p-type semiconductor film 5 is deposited on the coating obtained in step (5), and the sputtering chamber is evacuated to 6.0 x 10⁻⁶. -6 Pa was sputtered using a two-target system, ZnTe and Cu, with a purity of 99.99%. The process involved DC sputtering with a 500W DC power supply, an Ar flow rate of 100 sccm at ignition, and a vacuum maintained at 2.5 x 10⁻⁶. -3 torr, sputtering deposition was performed to deposit a ZnTe:Cu thin film with a thickness of 10nm;

[0070] (7) A back electrode layer 5 is formed on the coating obtained in step (6). The back electrode layer is made of Mo and is deposited by magnetron sputtering. The sputtering chamber is evacuated to 9.0 x 10⁻⁶. -6 The target material was a metallic Mo target with a purity of 99.99%; DC magnetron sputtering was used, with a DC power supply of 300W, an Ar flow rate of 100 sccm at ignition, and a vacuum level maintained at 2.5 x 10⁻⁶. -3 The metal thin film with a thickness of 200 nm is deposited by sputtering. Then, the Mo electrode layer is etched by laser etching to make it present a cross-shaped structure with a length of 17 mm and a width of 11 mm, thus obtaining a power generation glass component for 5G communication, which has an average loss of 4.5 dB in the 2-5 GHz communication frequency band. Example 4

[0071] (1) Immerse the high-transparency ultra-white glass substrate in a 10% sodium hydroxide solution of water and ethanol (the volume ratio of water to ethanol is 1:5) for 3 minutes, then rinse with deionized water; then immerse it in a 6% hydrochloric acid solution for 3 minutes, then rinse with deionized water and dry.

[0072] (2) An ITO film is deposited on the glass substrate as a transparent conductive layer (resistance less than 12Ω / □). The ITO transparent conductive layer is prepared using a high-purity ITO target with a purity of 99.99%, and the intrinsic vacuum of the cavity is 5.5 x 10⁻⁶. -6 The system uses a DC power supply with a sputtering power of 4000W and a voltage of 570V. The Ar (argon) flow rate is 200 sccm at ignition and maintained at 4.0 x 10⁻⁶ ppm. -3 The coating is performed under pressure from the torr and the substrate holder is heated to 200℃.

[0073] (4) MgZnO is deposited on the coating obtained in step (3) by magnetron sputtering. The target material is a high-purity (99.99%) MgZnO target material, and the bulk vacuum is 6.0 x 10⁻⁶. -6The sputtering power was 5000 W, and the voltage was 600 V. The sample entered the chamber, and the Ar flow rate at ignition was 200 sccm, maintaining a pressure of 2.5 x 10⁻⁶. -3 The sample reciprocates with the substrate holder to control the film thickness and uniformity. The substrate is heated to 350℃ for film deposition, and the MgZnO film thickness is 120nm.

[0074] (5) Using the near-space sublimation method, CdS and CdTe semiconductor layers are deposited on the coating obtained in step (4); the bulk vacuum of the entire coating vacuum chamber is 6.0 x 10⁻⁶. -2 Pa is heated by uniform infrared radiation, and the cavity is kept at approximately 500°C. Ar gas is repeatedly injected into the cavity and vacuum is repeatedly pumped out to reduce the concentration of contaminants in the cavity. The number of cycles is 3. A 50nm CdS layer is first deposited by sublimating CdS through a heat source. The baffle is opened to block the CdS sublimation port, and the CdTe heat source is opened. Then, a CdTe layer of approximately 3μm is deposited.

[0075] (6) A ZnTe:Cu film with a thickness of 20 nm was prepared on the coating obtained in step (5) as a p-type semiconductor film by magnetron sputtering; the sputtering chamber was evacuated to 5.0 × 10⁻⁶. -5 Pa was sputtered using a two-target system, ZnTe and Cu, with a purity of 99.99%. The sputtering method was DC magnetron sputtering, using a 500W DC power supply. The Ar flow rate at start-up was 100 sccm, and the vacuum level was maintained at 2.5 x 10⁻⁶. -3 torr, for sputtering coating;

[0076] (7) On the coating obtained in step (6), Al was deposited as the back electrode layer by magnetron sputtering with a purity of 99.99%. The magnetron sputtering method used was DC magnetron sputtering, with a DC power supply of 300W, an Ar flow rate of 100 sccm at ignition, and a vacuum level maintained at 2.5 x 10⁻⁶. -3 Torr is used to perform sputtering deposition with a thickness of 250nm;

[0077] (8) A cross-shaped structure is formed on the entire film layer on the glass substrate by laser etching. The structure is 17 mm long and 11 mm wide. SiO2 / SiN alternating antireflection film is deposited in the cross-shaped groove by magnetron sputtering to obtain a power generation glass component for 5G communication. Its average loss in the 2-5GHz communication frequency band is 4.5 dB.

[0078] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art can make many possible variations and modifications to the technical solutions of the present invention, or modify them into equivalent embodiments, without departing from the scope of the present invention. Therefore, any simple modifications, equivalent substitutions, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention, without departing from the scope of the present invention, shall still fall within the protection scope of the present invention.

Claims

1. A power-generating glass assembly for 5G communication, characterized in that... The structure is as follows: a patterned transparent conductive layer (2), an n-type semiconductor film layer (3), a CdS and CdTe semiconductor layer (4), a p-type semiconductor film layer (5), and a patterned back electrode layer (6) are sequentially arranged from bottom to top on a high-transparency ultra-white glass substrate (1); the n-type semiconductor film layer (3), the CdS and CdTe semiconductor layer (4), and the p-type semiconductor film layer (5) are all film layers with patterned structures; the patterned structure is a cross shape, and the length and width dimensions of the structure are the communication wavelength (λ / 10) – λ; the patterned structure is filled with a film system of SiO2 / SiN, SiO2 / ZrO2, SiO2 / TiO2, SiO2 / Al2O3, or porous AlPO4 / SiN insulating high and low refractive index combination film system.

2. The power-generating glass assembly for 5G communication according to claim 1, characterized in that: The transparent conductive layer (2) is one of FTO, ITO, and AZO; the n-type semiconductor film layer (3) is MgZnO; the p-type semiconductor film layer (5) is a p-type semiconductor film layer of ZnTe:Cu; and the back electrode layer (6) is Mo, Al, or Cr.

3. The power-generating glass assembly for 5G communication according to claim 1, characterized in that: The oxide film filling the cross shape is an oxygen-deficient film layer, or the cross shape is coated with a 10-nanometer oxygen barrier film on the groove wall using atomic layer deposition.

4. A method for preparing a power-generating glass component for 5G communication, characterized in that... Includes the following steps: (A) Clean and activate the glass substrate; (B) First, apply a cross-shaped high-temperature tape or high-temperature resistant ink to the glass substrate, then deposit an FTO, ITO or AZO film as a transparent conductive layer, and then remove the high-temperature tape or high-temperature resistant ink. (C) An alternating antireflective film with a combination of high and low refractive indices is deposited in the cross-shaped grooves made in step (B) by magnetron sputtering. The transparent conductive layer is protected by photoresist or high-temperature resistant ink to prevent the alternating antireflective film from being placed on the transparent conductive layer. (D) MgZnO with a thickness of 80-150 nm is deposited on the coating obtained in step (C) by magnetron sputtering; (E) CdS and CdTe semiconductor layers are deposited on the coating obtained in step (D) using the near-space sublimation method; (F) A ZnTe:Cu film with a thickness of 10-50 nm is prepared on the coating obtained in step (E) by magnetron sputtering as a p-type semiconductor film layer; (G) Apply a cross-shaped high-temperature tape or high-temperature resistant ink to the coating obtained in step (F), then deposit Mo, Al or Cr as a back electrode layer using magnetron sputtering, and then remove the high-temperature tape or high-temperature resistant ink.

5. A method for preparing a power-generating glass component for 5G communication, characterized in that... Includes the following steps: (1) Clean and activate the glass substrate; (2) A layer of FTO, ITO or AZO film is deposited on the glass substrate as a transparent conductive layer. Photoresist is coated on the entire surface of the transparent conductive layer. Then, the transparent conductive layer is etched by laser etching to make it present a cross-shaped structure. (3) By low-power magnetron sputtering, a SiO2 layer is first deposited in a cross-shaped groove, followed by a SiN layer, and then the photoresist is removed. (4) MgZnO is deposited on the coating obtained in step (3) by magnetron sputtering; (5) Using the near-space sublimation method, CdS and CdTe semiconductor layers are deposited on the coating obtained in step (4); (6) A ZnTe:Cu film with a thickness of 10-50 nm is prepared on the coating obtained in step (5) by magnetron sputtering as a p-type semiconductor film layer; (7) Mo, Al or Cr are deposited as a back electrode layer on the coating obtained in step (6) by magnetron sputtering, with a thickness of 200-300 nm. (8) A cross shape is formed on the entire film layer on the glass substrate by laser etching.

6. The method for preparing a power-generating glass assembly for 5G communication according to claim 5, characterized in that: The scheme after step (8) is as follows: In the cross-shaped groove after laser etching, an alternating antireflection film of SiO2 / SiN, SiO2 / ZrO2, SiO2 / TiO2, SiO2 / Al2O3, and porous AlPO4 / SiN insulating high and low refractive index combination is deposited by magnetron sputtering.

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