Semiconductor structure deposition methods, computer program products and computer devices

CN118880282BActive Publication Date: 2025-12-02GTA SEMICON CO LTD
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Patent Information

Application Number
CN202410912459.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-07-08
Publication Date
2025-12-02
Estimated Expiration
2044-07-08

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Abstract

This invention provides a semiconductor structure deposition method. In the nucleation process, the invention achieves nucleation by sequentially transferring wafers to different workstations, with the same gas continuously circulated at each workstation. Therefore, it eliminates the need for costly, high-speed switching valves, effectively saving process costs. After nucleation of the same batch of wafers, the bulk deposition process is performed simultaneously, eliminating the waiting time required in existing technologies where some wafers must wait for other wafers to complete their bulk deposition before proceeding with their own. This invention eliminates both the need for costly, high-speed switching valves and the waiting time, thereby reducing process time and costs, achieving cost reduction and efficiency improvement.
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Citation Information

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