A multi-channel HEMT device and its manufacturing method
CN118888580BActive Publication Date: 2025-09-23SHANGHAI XINWEI SEMICON CO LTD
Patent Information
- Application Number
- CN202410915435.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-09
- Publication Date
- 2025-09-23
- Estimated Expiration
- 2044-07-09
AI Technical Summary
Technical Problem
Multi-channel HEMT devices have reliability and long-term stability issues in high-power applications.
Method used
Multiple source and drain injection regions of different depths are formed in the semiconductor substrate, so that the current is dispersed and flows between different channels. Through a single dry etching and ion implantation process, injection regions with decreasing or increasing depths are formed to avoid current concentration.
Benefits of technology
The heat dissipation and reliability of the device are improved, long-term stability is guaranteed, and production costs and process steps are reduced, making it suitable for large-scale production.
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Smart Images
Figure CN118888580B_ABST
Abstract
The present invention provides a multi-channel HEMT device and a method for fabricating the same. The device comprises a semiconductor substrate, a source region, and a drain region. The semiconductor substrate comprises multiple stacked heterostructure layers containing a two-dimensional electron gas. The source region and the drain region are formed in the semiconductor substrate. The source region comprises multiple spaced source injection regions, and the drain region comprises multiple spaced drain injection regions. The depths of the multiple source injection regions decrease, while the depths of the multiple drain injection regions increase in a direction from the source region to the drain region. Each source injection region and each drain injection region is electrically connected to at least one two-dimensional electron gas. The device comprises multiple source injection regions and drain injection regions of varying depths formed in the semiconductor substrate. This allows currents in different channels to flow through different paths during device operation, avoiding current concentration in localized areas of the device. This effectively improves the device's heat dissipation and reliability, ensuring its long-term stability.
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Citation Information
Patent Citations
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