一种二维材料及其制备方法和应用
By generating BiCuOX single-crystal particles through reaction in a vacuum quartz tube and then subjecting them to heat treatment, BiCuOX nanosheets with adjustable lateral dimensions were prepared. This solved the problem of difficult-to-control growth process of BiCuOX two-dimensional materials and realized the possibility of high electrical conductivity and large-scale production.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MINDU INNOVATION LAB
- Filing Date
- 2023-05-15
- Publication Date
- 2026-07-17
AI Technical Summary
In the current preparation process of BiCuOX two-dimensional materials, the small lateral size and the large number of constituent elements make the growth process difficult to control. Furthermore, the reaction requirements are stringent, making it difficult to obtain single or several atomic-layer nanosheets through mechanical exfoliation, and thus failing to meet the needs of semiconductor devices.
BiCuOX single crystal particles were generated by reacting a precursor containing copper, bismuth, oxygen and selenium (or tellurium) in a vacuum quartz tube. After heat treatment, BiCuOX nanosheets were prepared by physical vapor deposition. The growth temperature was controlled at 700~750℃, thus achieving the controllable growth of BiCuOX nanosheets.
The prepared BiCuOX nanosheets can reach a lateral size of up to 300 μm, which meets the requirements of semiconductor devices. The process is simple, low-cost, and has high conductivity, making it suitable for large-scale production. It avoids the generation of by-products and the growth process is stable and controllable.
Smart Images
Figure CN118957728B_ABST