一种二维碲化铜纳米片及其制备方法和应用
By controlling the growth temperature and vapor deposition method, tetragonal and hexagonal Cu2Te nanosheets were synthesized on mica substrates, solving the growth problem of two-dimensional Cu2Te nanosheets and realizing the preparation of nanosheets with high mobility and anisotropic conductivity, thereby improving the performance and preparation efficiency of electronic devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MINDU INNOVATION LAB
- Filing Date
- 2023-05-15
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies make it difficult to efficiently synthesize and control the growth of two-dimensional Cu2Te nanosheets, which affects their application in electronic devices.
Tetragonal and hexagonal Cu2Te nanosheets were synthesized on a mica substrate by controlling the growth temperature through chemical vapor deposition. By using temperature programming and gas flow rate control, tetragonal Cu2Te nanosheets with in-plane periodic van der Waals superlattices and high-quality single-crystal hexagonal Cu2Te nanosheets were prepared.
We have achieved the fabrication of Cu2Te nanosheets with high mobility and anisotropic conductivity, which simplifies the fabrication process, reduces costs, and improves the performance of electronic devices.
Smart Images
Figure CN118957745B_ABST