A semiconductor integrated circuit and a temperature drift compensation method thereof

Abstract

The present invention relates to the technical field of semiconductor integrated circuits, and provides a semiconductor integrated circuit and a temperature drift compensation method thereof. The semiconductor integrated circuit comprises: a bandgap reference circuit, a current source control circuit, a measurement circuit and a temperature drift compensation circuit; the bandgap reference circuit is respectively connected to the current source control circuit, the measurement circuit and the temperature drift compensation circuit; the bandgap reference circuit is used to generate a bandgap reference voltage; the current source control circuit is used to generate a current source based on the bandgap reference voltage, and to generate a heat source based on the current source, so as to change the ambient temperature of the bandgap reference circuit by using the heat source; the measurement circuit is used to measure the ambient temperature; and the temperature drift compensation circuit is used to compensate for the temperature drift of the reference voltage. The present invention can realize accurate temperature drift compensation for the integrated circuit by performing temperature drift compensation on the bandgap reference circuit, which is beneficial to improving the signal processing accuracy of the integrated circuit.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor integrated circuits, and in particular to a semiconductor integrated circuit and a temperature drift compensation method thereof. Background Art

[0002] The bandgap reference circuit in the semiconductor integrated circuit mainly uses a diode-connected triode device, a resistor, and an amplifier composed of a MOS tube to provide a reference voltage; an important indicator of the reference voltage is the working stability of the voltage reference provided by it in a wide temperature range; the temperature drift coefficient is an important parameter to measure the working stability of the reference voltage, which describes the change of the output voltage of the reference voltage source with temperature. The higher the temperature drift coefficient, the worse the stability of the reference voltage, and the lower the temperature drift coefficient, the better the stability of the reference voltage;

[0003] At present, in the temperature drift compensation of semiconductor integrated circuits, the temperature control is not precise enough, which makes the temperature drift coefficient unstable and the effect of temperature drift compensation is not ideal.

[0004] The patent application number CN202011535165.0 proposes a semiconductor integrated circuit and a temperature drift compensation method for a semiconductor integrated circuit, the semiconductor integrated circuit comprising: a bandgap reference circuit configured to generate a reference voltage VREF; a temperature drift compensation circuit coupled to the bandgap reference circuit and configured to compensate for the temperature drift of the reference voltage VREF based on digital control logic; a micro-current source circuit coupled to the bandgap reference circuit and configured to generate a micro-current IOUT1 based on the reference voltage VREF; and a current amplification and testing circuit coupled to the bandgap reference circuit. The micro-current source circuit includes an operational amplifier U3, a resistor R9, a resistor R10, a high-power transistor Q4, and switches K1, K2, and K3. The current amplification and testing circuit is configured to generate a current IIN flowing through the high-power transistor Q4 based on the micro-current IOUT1 when switches K1, K2, and K3 are turned on, so that the high-power transistor Q4 becomes hot, thereby changing the temperature of the environment in which the bandgap reference circuit is located. This technical solution realizes the generation of micro-current through the micro-current source circuit, and it is difficult to ensure the accuracy of the micro-current.

[0005] Therefore, it is necessary to provide a semiconductor integrated circuit and a temperature drift compensation method thereof. Summary of the invention

[0006] The present invention provides a semiconductor integrated circuit and a temperature drift compensation method thereof. By performing temperature drift compensation on a bandgap reference circuit, accurate temperature drift compensation on the integrated circuit can be achieved, which is beneficial to improving the signal processing accuracy of the integrated circuit.

[0007] The present invention provides a semiconductor integrated circuit, comprising: a bandgap reference circuit, a current source control circuit, a measurement circuit and a temperature drift compensation circuit; the bandgap reference circuit is respectively connected to the current source control circuit, the measurement circuit and the temperature drift compensation circuit; the bandgap reference circuit is used to generate a bandgap reference voltage; the current source control circuit is used to generate a current source based on the bandgap reference voltage, and to generate a heat source based on the current source, so as to change the ambient temperature of the bandgap reference circuit by using the heat source; the measurement circuit is used to measure the ambient temperature; and the temperature drift compensation circuit is used to compensate for the temperature drift of the reference voltage.

[0008] Furthermore, the bandgap reference circuit includes resistors R1, R2, R3, R4, diodes D1, D2, amplifiers LM1, LM2, LM3 and operational amplifier U1; amplifiers LM1, LM2 and LM3 form a current mirror structure.

[0009] Further, one end of the amplifier tube LM1, one end of the amplifier tube LM2, and one end of the amplifier tube LM3 are all connected to the power supply, the other end of the amplifier tube LM1 is connected to one end of the resistor R1, and the other end of the resistor R1 is grounded; the other end of the amplifier tube LM2 is connected to one end of the resistor R2, and the other end of the resistor R2 is grounded; the other end of the amplifier tube LM3 is connected to one end of the resistor R3, and the other end of the resistor R3 is grounded; the other end of the amplifier tube LM3 outputs a bandgap reference voltage;

[0010] The control ends of the amplifier tubes LM1, LM2 and LM3 are all connected to the output end of the operational amplifier U1; the other end of the amplifier tube LM1 is connected to the first input end of the operational amplifier U1, and the other end of the amplifier tube LM2 is connected to the second input end of the operational amplifier U1; the anode of the diode D1 is connected to the first input end of the operational amplifier U1, and the cathode of the diode D1 is grounded; the anode of the diode D2 is connected to the other end of the resistor R4, one end of the resistor R4 is connected to the second input end of the operational amplifier U1, and the cathode of the diode D2 is grounded.

[0011] Furthermore, the current source control circuit includes a conduction subcircuit and a high-power triode; the conduction subcircuit includes a transistor, multiple resistors, and an operational amplifier; one end of the conduction subcircuit is connected to a bandgap reference voltage; the conduction circuit is configured to: achieve conduction when the bandgap reference voltage is higher than a set first voltage threshold, and generate a current source.

[0012] Furthermore, the other end of the conduction circuit is connected to a high-power transistor, and the current source generated by the conduction circuit flows through the high-power transistor, causing the high-power transistor to generate heat and generate a heat source to change the ambient temperature of the bandgap reference circuit.

[0013] Furthermore, the measuring circuit includes an A / D converter, and the A / D converter is used to collect the output voltage signal on the high-power triode and convert it into digital quantity data.

[0014] Furthermore, the measurement circuit also includes a voltage signal processing subcircuit, which is connected to the A / D converter and is used to filter and amplify the output voltage signal and then send it to the A / D converter.

[0015] Furthermore, the temperature drift compensation circuit includes a processor, and the processor is used to receive digital quantity data and perform temperature drift compensation for the reference voltage to obtain an actual ambient temperature value of the bandgap reference circuit.

[0016] A temperature drift compensation method for a semiconductor integrated circuit, comprising:

[0017] generating a current source based on a conduction subcircuit in the current source control circuit;

[0018] Controlling the current source to flow through the high-power triode so that the temperature of the environment where the bandgap reference circuit is located generates a first temperature, and obtaining a temperature difference between the first temperature and a reference temperature of the environment where the bandgap reference circuit is located; the reference temperature is the temperature of the environment where the bandgap reference circuit is located when no heat source is generated;

[0019] Using the set temperature and voltage correspondence table, query and obtain the voltage difference corresponding to the temperature difference;

[0020] According to the voltage difference, the cooling temperature value is calculated using the set temperature drift compensation algorithm;

[0021] Based on the cooling temperature value, the corresponding adjustment voltage value is obtained by using the corresponding relationship table of the set temperature and voltage;

[0022] According to the adjustment voltage value, the processor is used to perform temperature drift compensation on the bandgap reference circuit.

[0023] Furthermore, the current source is tested and limited to ensure the effectiveness and reliability of temperature drift compensation. The specific steps are as follows:

[0024] Prepare for reliability testing of integrated circuits based on the configured thermal shock test chamber and programmable constant temperature and humidity test chamber;

[0025] generating a test current source based on a conduction subcircuit in the current source control circuit;

[0026] Controlling the test current source to flow through the high-power triode, using a thermal shock test chamber and a programmable constant temperature and humidity test chamber to perform reliability testing on the bandgap reference circuit, and obtaining a first test result on thermal shock and a second test result on constant temperature;

[0027] Based on the first test result and the second test result, obtaining a reliability test result of the bandgap reference circuit;

[0028] Based on the reliability test results of the bandgap reference circuit, the reliability of the integrated circuit affected by the reliability test results is judged by using the set correlation impact judgment rules to obtain the correlation impact judgment results;

[0029] If the reliability test result meets the set first expected effect, and the correlation impact evaluation result meets the set second expected effect, it is determined that the test current source meets the test requirements, and the current threshold of the test current source is set;

[0030] In the process of controlling the conducting subcircuit to generate the current source, it is ensured that the current value of the generated current source is not greater than the current threshold.

[0031] Compared with the prior art, the present invention has the following advantages and beneficial effects: by performing temperature drift compensation on the bandgap reference circuit, accurate temperature drift compensation on the integrated circuit can be achieved, which is beneficial to improving the signal processing accuracy of the integrated circuit.

[0032] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the written description and the accompanying drawings.

[0033] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0035] Figure 1 It is a schematic diagram of the structure of a semiconductor integrated circuit;

[0036] Figure 2 Schematic diagram of the bandgap reference circuit structure;

[0037] Figure 3 A schematic diagram of the method steps of a temperature drift compensation method. DETAILED DESCRIPTION

[0038] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0039] The present invention provides a semiconductor integrated circuit, such as Figure 1As shown, it includes: a bandgap reference circuit, a current source control circuit, a measurement circuit and a temperature drift compensation circuit; the bandgap reference circuit is connected to the current source control circuit, the measurement circuit and the temperature drift compensation circuit respectively; the bandgap reference circuit is used to generate a bandgap reference voltage; the current source control circuit is used to generate a current source based on the bandgap reference voltage, and to generate a heat source based on the current source, so as to change the ambient temperature of the bandgap reference circuit by using the heat source; the measurement circuit is used to measure the ambient temperature; and the temperature drift compensation circuit is used to compensate for the temperature drift of the reference voltage.

[0040] The working principle of the above technical solution is: in order to realize a semiconductor integrated circuit, the present invention proposes to construct a bandgap reference circuit, a current source control circuit, a measurement circuit and a temperature drift compensation circuit; wherein the bandgap reference circuit is respectively connected to the current source control circuit, the measurement circuit and the temperature drift compensation circuit; the bandgap reference circuit is used to generate a bandgap reference voltage; the current source control circuit is used to generate a current source based on the bandgap reference voltage, and to generate a heat source based on the current source, so as to use the heat source to change the ambient temperature of the bandgap reference circuit; the measurement circuit is used to measure the ambient temperature; and the temperature drift compensation circuit is used to compensate for the temperature drift of the reference voltage.

[0041] The beneficial effect of the above technical solution is: by adopting the solution provided by this embodiment, by constructing a bandgap reference circuit, a current source control circuit, a measurement circuit and a temperature drift compensation circuit, a basis and conditions are provided for temperature drift compensation.

[0042] In one embodiment, Figure 2 As shown, the bandgap reference circuit includes resistors R1, R2, R3, R4, diodes D1, D2, amplifiers LM1, LM2, LM3 and operational amplifier U1; amplifiers LM1, LM2 and LM3 form a current mirror structure.

[0043] The working principle of the above technical solution is: the circuit structure of the bandgap reference circuit includes resistor R1, resistor R2, resistor R3, resistor R4, diode D1, diode D2, amplifier tube LM1, amplifier tube LM2, amplifier tube LM3 and operational amplifier U1; amplifier tube LM1, amplifier tube LM2, amplifier tube LM3 form a current mirror structure; and a reference voltage is generated through the circuit structure.

[0044] The beneficial effect of the above technical solution is: by adopting the solution provided in this embodiment, a reference voltage is generated through the circuit structure of the reference circuit, which provides conditions for subsequent temperature drift compensation.

[0045] In one embodiment, one end of the amplifier tube LM1, one end of the amplifier tube LM2, and one end of the amplifier tube LM3 are all connected to a power supply, the other end of the amplifier tube LM1 is connected to one end of the resistor R1, and the other end of the resistor R1 is grounded; the other end of the amplifier tube LM2 is connected to one end of the resistor R2, and the other end of the resistor R2 is grounded; the other end of the amplifier tube LM3 is connected to one end of the resistor R3, and the other end of the resistor R3 is grounded; the other end of the amplifier tube LM3 outputs a bandgap reference voltage;

[0046] The control ends of the amplifier tubes LM1, LM2 and LM3 are all connected to the output end of the operational amplifier U1; the other end of the amplifier tube LM1 is connected to the first input end of the operational amplifier U1, and the other end of the amplifier tube LM2 is connected to the second input end of the operational amplifier U1; the anode of the diode D1 is connected to the first input end of the operational amplifier U1, and the cathode of the diode D1 is grounded; the anode of the diode D2 is connected to the other end of the resistor R4, one end of the resistor R4 is connected to the second input end of the operational amplifier U1, and the cathode of the diode D2 is grounded.

[0047] The working principle of the above technical solution is as follows: the connection relationship of the circuit structure of the reference circuit is as follows: one end of the amplifier tube LM1, one end of the amplifier tube LM2, and one end of the amplifier tube LM3 are all connected to the power supply, the other end of the amplifier tube LM1 is connected to one end of the resistor R1, and the other end of the resistor R1 is grounded; the other end of the amplifier tube LM2 is connected to one end of the resistor R2, and the other end of the resistor R2 is grounded; the other end of the amplifier tube LM3 is connected to one end of the resistor R3, and the other end of the resistor R3 is grounded; the other end of the amplifier tube LM3 outputs a bandgap reference voltage; the control ends of the amplifier tubes LM1, LM2, and LM3 are all connected to the output end of the operational amplifier U1; the other end of the amplifier tube LM1 is connected to the first input end of the operational amplifier U1, and the other end of the amplifier tube LM2 is connected to the second input end of the operational amplifier U1; the anode of the diode D1 is connected to the first input end of the operational amplifier U1, and the cathode of the diode D1 is grounded; the anode of the diode D2 is connected to the other end of the resistor R4, one end of the resistor R4 is connected to the second input end of the operational amplifier U1, and the cathode of the diode D2 is grounded.

[0048] The beneficial effect of the above technical solution is: by adopting the solution provided by this embodiment, a basis is provided for subsequent processing by establishing the circuit structure of the reference circuit.

[0049] In one embodiment, the current source control circuit includes a conduction subcircuit and a high-power triode; the conduction subcircuit includes a transistor, multiple resistors, and an operational amplifier; one end of the conduction subcircuit is connected to a bandgap reference voltage; the conduction circuit is configured to: achieve conduction when the bandgap reference voltage is higher than a set first voltage threshold, and generate a current source.

[0050] The working principle of the above technical solution is: the function of current control is realized by a conduction subcircuit and a high-power transistor; the conduction subcircuit includes a transistor, multiple resistors, and an operational amplifier; one end of the conduction subcircuit is connected to a bandgap reference voltage; the conduction circuit is configured to: realize conduction when the bandgap reference voltage is higher than a set first voltage threshold, and generate a current source.

[0051] The beneficial effect of the above technical solution is: by adopting the solution provided by this embodiment, a current source is generated to provide conditions for the subsequent heating of the high-power triode.

[0052] In one embodiment, the other end of the conduction circuit is connected to a high-power transistor, and the current source generated by the conduction circuit flows through the high-power transistor, causing the high-power transistor to generate heat and generate a heat source to change the ambient temperature of the bandgap reference circuit.

[0053] The working principle of the above technical solution is: in order to ensure the generation of heat source, the present invention connects the other end of the conduction circuit to a high-power transistor, and the current source generated by it flows through the high-power transistor, causing the high-power transistor to generate heat and generate a heat source to change the ambient temperature of the bandgap reference circuit.

[0054] The beneficial effect of the above technical solution is: by adopting the solution provided by this embodiment, a heat source is generated to provide a basis and conditions for changing the ambient temperature of the bandgap reference circuit.

[0055] In one embodiment, the measuring circuit includes an A / D converter, and the A / D converter is used to collect the output voltage signal of the high-power triode and convert it into digital data.

[0056] The working principle of the above technical solution is: in order to better obtain ambient temperature data, measurement is required; the present invention sets a measurement circuit, the measurement circuit includes an A / D converter, and the A / D converter is used to collect the output voltage signal on the high-power triode and convert it into digital data.

[0057] The beneficial effect of the above technical solution is: by adopting the solution provided by this embodiment, accurate measurement values ​​can be obtained through the measurement circuit.

[0058] In one embodiment, the measurement circuit further includes a voltage signal processing subcircuit, which is connected to the A / D converter and is used to filter and amplify the output voltage signal and then send it to the A / D converter.

[0059] The working principle of the above technical solution is: in order to ensure the measurement accuracy of the measuring circuit, the present invention sets a voltage signal processing subcircuit, and the voltage signal processing subcircuit is connected to the A / D converter to filter and amplify the output voltage signal and then send it to the A / D converter.

[0060] The beneficial effect of the above technical solution is: by adopting the solution provided in this embodiment, a basis and conditions are provided for obtaining an accurate output voltage signal through a voltage signal processing subcircuit.

[0061] In one embodiment, the temperature drift compensation circuit includes a processor, and the processor is used to receive digital quantity data and perform temperature drift compensation on the reference voltage to obtain an actual ambient temperature value of the bandgap reference circuit.

[0062] The working principle of the above technical solution is: in order to realize the processing of temperature drift compensation, the present invention sets up a temperature drift compensation circuit, which includes a processor, and the processor is used to receive digital quantity data and perform temperature drift compensation of the reference voltage to obtain the actual ambient temperature value of the bandgap reference circuit.

[0063] The beneficial effect of the above technical solution is: by adopting the solution provided by this embodiment, it is convenient to realize effective processing of temperature drift compensation through the temperature drift compensation circuit.

[0064] A temperature drift compensation method, such as Figure 3 As shown, for a semiconductor integrated circuit, comprising:

[0065] generating a current source based on a conduction subcircuit in the current source control circuit;

[0066] Controlling the current source to flow through the high-power triode so that the temperature of the environment where the bandgap reference circuit is located generates a first temperature, and obtaining a temperature difference between the first temperature and a reference temperature of the environment where the bandgap reference circuit is located; the reference temperature is the temperature of the environment where the bandgap reference circuit is located when no heat source is generated;

[0067] Using the set temperature and voltage correspondence table, query and obtain the voltage difference corresponding to the temperature difference;

[0068] According to the voltage difference, the cooling temperature value is calculated using the set temperature drift compensation algorithm;

[0069] Based on the cooling temperature value, the corresponding adjustment voltage value is obtained by using the corresponding relationship table of the set temperature and voltage;

[0070] According to the adjustment voltage value, the processor is used to perform temperature drift compensation on the bandgap reference circuit.

[0071] The working principle of the above technical solution is as follows: in order to realize the temperature drift compensation method, the present invention first generates a current source based on the conduction subcircuit in the current source control circuit; then controls the current source to flow through the high-power triode, so that the temperature of the environment in which the bandgap reference circuit is located generates a first temperature, and obtains the temperature difference between the first temperature and the reference temperature of the environment in which the bandgap reference circuit is located; the reference temperature is the temperature of the environment in which the bandgap reference circuit is located when no heat source is generated; finally, using the set temperature and voltage correspondence table, query and obtain the voltage difference corresponding to the temperature difference; according to the voltage difference, use the set temperature drift compensation algorithm to calculate and obtain the cooling temperature value; based on the cooling temperature value, use the set temperature and voltage correspondence table to obtain the corresponding adjustment voltage value; according to the adjustment voltage value, use the processor to perform temperature drift compensation processing on the bandgap reference circuit.

[0072] The beneficial effect of the above technical solution is: by adopting the solution provided by this embodiment, accurate temperature drift compensation of the integrated circuit can be achieved through the process of performing temperature drift compensation on the bandgap reference circuit, which is beneficial to improving the signal processing accuracy of the integrated circuit.

[0073] In one embodiment, the current source is tested and limited to ensure the effectiveness and reliability of temperature drift compensation. The specific steps are:

[0074] Prepare for reliability testing of integrated circuits based on the configured thermal shock test chamber and programmable constant temperature and humidity test chamber;

[0075] generating a test current source based on a conduction subcircuit in the current source control circuit;

[0076] Controlling the test current source to flow through the high-power triode, using a thermal shock test chamber and a programmable constant temperature and humidity test chamber to perform reliability testing on the bandgap reference circuit, and obtaining a first test result on thermal shock and a second test result on constant temperature;

[0077] Based on the first test result and the second test result, obtaining a reliability test result of the bandgap reference circuit;

[0078] Based on the reliability test results of the bandgap reference circuit, the reliability of the integrated circuit affected by the reliability test results is judged by using the set correlation impact judgment rules to obtain the correlation impact judgment results;

[0079] If the reliability test result meets the set first expected effect, and the correlation impact evaluation result meets the set second expected effect, it is determined that the test current source meets the test requirements, and the current threshold of the test current source is set;

[0080] In the process of controlling the conducting subcircuit to generate the current source, it is ensured that the current value of the generated current source is not greater than the current threshold.

[0081] The working principle of the above technical solution is: in order to ensure the effectiveness and reliability of temperature drift compensation, the present invention also includes testing and limiting the current source, specifically: firstly, based on the configured thermal shock test chamber and programmable constant temperature and humidity test chamber, the reliability test preparation of the integrated circuit is carried out; then, based on the conduction subcircuit in the current source control circuit, a test current source is generated; the test current source is controlled to flow through the high-power triode, and the reliability test of the bandgap reference circuit is carried out using the thermal shock test chamber and the programmable constant temperature and humidity test chamber to obtain a first test result about thermal shock and a second test result about keeping the temperature constant; based on the first test result and The second test result is used to obtain the reliability test result of the bandgap reference circuit; then, based on the reliability test result of the bandgap reference circuit, the reliability of the integrated circuit affected by the reliability test result is judged using the set correlation impact judgment rule to obtain the correlation impact judgment result; if the reliability test result meets the set first expected effect, and the correlation impact judgment result meets the set second expected effect, it is determined that the test current source meets the test requirements, and the current threshold of the test current source is set; in the process of controlling the conduction subcircuit to generate the current source, ensure that the current value of the generated current source is not greater than the current threshold.

[0082] The beneficial effect of the above technical solution is: by adopting the solution provided in this embodiment, the reliability test preparation of the integrated circuit is carried out based on the configured hot and cold shock test chamber and the programmable constant temperature and humidity test chamber, and then based on the conduction sub-circuit in the current source control circuit, a test current source is generated, and the selection of the test current source is analyzed and determined, which can ensure the accuracy of the current source control, and is conducive to ensuring the effectiveness and reliability of the barrier temperature drift compensation.

[0083] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A temperature drift compensation method, characterized in that: include: generating a current source based on a conduction subcircuit in the current source control circuit; Controlling the current source to flow through the high-power triode so that the temperature of the environment where the bandgap reference circuit is located generates a first temperature, and obtaining a temperature difference between the first temperature and a reference temperature of the environment where the bandgap reference circuit is located; the reference temperature is the temperature of the environment where the bandgap reference circuit is located when no heat source is generated; Using the set temperature and voltage correspondence table, query and obtain the voltage difference corresponding to the temperature difference; According to the voltage difference, the cooling temperature value is calculated using the set temperature drift compensation algorithm; Based on the cooling temperature value, the corresponding adjustment voltage value is obtained by using the corresponding relationship table of the set temperature and voltage; According to the adjustment voltage value, the processor is used to perform temperature drift compensation on the bandgap reference circuit.

2. A temperature drift compensation method according to claim 1, characterized in that: It also includes testing and limiting the current source to ensure the effectiveness and reliability of temperature drift compensation. The specific steps are: Prepare for reliability testing of integrated circuits based on the configured thermal shock test chamber and programmable constant temperature and humidity test chamber; generating a test current source based on a conduction subcircuit in the current source control circuit; Controlling the test current source to flow through the high-power triode, using a thermal shock test chamber and a programmable constant temperature and humidity test chamber to perform reliability testing on the bandgap reference circuit, and obtaining a first test result on thermal shock and a second test result on constant temperature; Based on the first test result and the second test result, obtaining a reliability test result of the bandgap reference circuit; Based on the reliability test results of the bandgap reference circuit, the reliability of the integrated circuit affected by the reliability test results is judged by using the set correlation impact judgment rules to obtain the correlation impact judgment results; If the reliability test result meets the set first expected effect, and the correlation impact evaluation result meets the set second expected effect, it is determined that the test current source meets the test requirements, and the current threshold of the test current source is set; In the process of controlling the conducting subcircuit to generate the current source, it is ensured that the current value of the generated current source is not greater than the current threshold.

3. A semiconductor integrated circuit, used to perform a temperature drift compensation method as claimed in any one of claims 1 to 2, characterized in that: include: A bandgap reference circuit, a current source control circuit, a measurement circuit and a temperature drift compensation circuit; the bandgap reference circuit is connected to the current source control circuit, the measurement circuit and the temperature drift compensation circuit respectively; the bandgap reference circuit is used to generate a bandgap reference voltage; the current source control circuit is used to generate a current source based on the bandgap reference voltage, and to generate a heat source based on the current source, so as to change the ambient temperature of the bandgap reference circuit by using the heat source; the measurement circuit is used to measure the ambient temperature; the temperature drift compensation circuit is used to compensate for the temperature drift of the reference voltage.

4. A semiconductor integrated circuit according to claim 3, characterized in that: The bandgap reference circuit includes resistors R1, R2, R3, R4, diodes D1, D2, amplifiers LM1, LM2, LM3 and operational amplifier U1; amplifiers LM1, LM2 and LM3 form a current mirror structure.

5. A semiconductor integrated circuit according to claim 4, characterized in that: One end of the amplifier tube LM1, one end of the amplifier tube LM2, and one end of the amplifier tube LM3 are all connected to the power supply, the other end of the amplifier tube LM1 is connected to one end of the resistor R1, and the other end of the resistor R1 is grounded; the other end of the amplifier tube LM2 is connected to one end of the resistor R2, and the other end of the resistor R2 is grounded; the other end of the amplifier tube LM3 is connected to one end of the resistor R3, and the other end of the resistor R3 is grounded; the other end of the amplifier tube LM3 outputs a bandgap reference voltage; The control ends of the amplifier tubes LM1, LM2 and LM3 are all connected to the output end of the operational amplifier U1; the other end of the amplifier tube LM1 is connected to the first input end of the operational amplifier U1, and the other end of the amplifier tube LM2 is connected to the second input end of the operational amplifier U1; the anode of the diode D1 is connected to the first input end of the operational amplifier U1, and the cathode of the diode D1 is grounded; the anode of the diode D2 is connected to the other end of the resistor R4, one end of the resistor R4 is connected to the second input end of the operational amplifier U1, and the cathode of the diode D2 is grounded.

6. A semiconductor integrated circuit according to claim 3, characterized in that: The current source control circuit includes a conduction subcircuit and a high-power triode; the conduction subcircuit includes a transistor, multiple resistors, and an operational amplifier; one end of the conduction subcircuit is connected to a bandgap reference voltage; the conduction subcircuit is configured to: achieve conduction when the bandgap reference voltage is higher than a set first voltage threshold, and generate a current source.

7. A semiconductor integrated circuit according to claim 6, characterized in that: The other end of the conduction subcircuit is connected to a high-power transistor, and the current source generated by the conduction subcircuit flows through the high-power transistor, causing the high-power transistor to generate heat and generate a heat source to change the ambient temperature of the bandgap reference circuit.

8. A semiconductor integrated circuit according to claim 3, characterized in that: The measuring circuit comprises an A / D converter, which is used to collect the output voltage signal of the high-power triode and convert it into digital quantity data.

9. A semiconductor integrated circuit according to claim 8, characterized in that: The measuring circuit also includes a voltage signal processing subcircuit, which is connected to the A / D converter and is used to filter and amplify the output voltage signal before sending it to the A / D converter.

10. The semiconductor integrated circuit according to claim 8, characterized in that: The temperature drift compensation circuit includes a processor, and the processor is used to receive digital quantity data, and perform temperature drift compensation of the reference voltage to obtain the actual ambient temperature value of the bandgap reference circuit.

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