A method for preparing a quantum dot Micro MIP device

Abstract

The present invention relates to the field of semiconductor display technology, and specifically discloses a method for preparing a quantum dot Micro MIP device, comprising: S1, preparing raw materials; S2, sapphire coating; S3, mass transfer; S4, quantum dot grooves; S5, quantum dot spraying; S6, quantum dot packaging; S7, laser stripping; S8, RDL packaging; S9, device cutting; S10, device measurement; the present invention combines blue light Micro COW with quantum dot materials to achieve color conversion, thereby generating red light and green light, further improving the color saturation and fineness of the display device, and helping to improve the overall display quality. The mass transfer technology and laser stripping technology are adopted to make the chip transfer and packaging process more efficient and accurate, reduce the loss in the manufacturing process, and help to control the manufacturing cost. The cutting and packaging process of the device is also optimized to ensure the performance and quality of the device, while improving the production efficiency.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor display, and in particular relates to a method for preparing a quantum dot Micro MIP device. Background Art

[0002] With the development of display technology, the demands for heat dissipation performance and low cost of display devices are increasing. The dot pitch of displays is also gradually moving towards small pitch and micro pitch, and the size of the chips used is also gradually decreasing. This approach poses certain challenges to the device structure and manufacturing cost.

[0003] In order to meet higher display resolution and more delicate picture quality, the dot pitch of display devices is gradually moving towards small pitch and micro pitch. As the dot pitch decreases, the chip size used is also gradually decreasing. This requires the device preparation technology to have higher precision and stability to ensure the performance and quality of the device. The reduction of dot pitch and chip size not only increases the difficulty of manufacturing, but may also lead to an increase in manufacturing costs, so staff are required to improve the device structure. Summary of the invention

[0004] The object of the present invention is to provide a method for preparing a quantum dot Micro MIP device to solve the problems raised in the above background technology.

[0005] To achieve the above object, the present invention provides the following technical solutions:

[0006] A method for preparing a quantum dot Micro MIP device comprises the following steps:

[0007] S1. Prepare raw materials;

[0008] S2, sapphire coating: coating the receiving adhesive material on the sapphire substrate by a spin coater;

[0009] S3, Mass transfer: transfer the Blu-ray Micro COW through the mass transfer device;

[0010] S4, quantum dot groove: the sapphire substrate after mass transfer is coated with transparent photosensitive material to make quantum dot groove;

[0011] S5, quantum dot spraying: spray different quantum dot materials on the quantum dot slots to achieve color conversion;

[0012] S6, quantum dot encapsulation: encapsulate the sapphire surface after spraying quantum dots with encapsulation materials;

[0013] S7, laser stripping: transfer the packaged chip to another sapphire substrate coated with glue by laser, so that the PAD is exposed;

[0014] S8, RDL packaging: Prepare the designed integrated circuit on the transferred substrate through the RDL process;

[0015] S9, device cutting: remove the sapphire wafer and laser cut the RDL packaged chip;

[0016] S10, device sub-test: Use EL equipment to test the electrical and optical performance of the device.

[0017] Preferably, in step S1, suitable blue light Micro COW, quantum dot material, sapphire substrate, receiving adhesive material, photosensitive adhesive and packaging adhesive are selected to prepare raw materials.

[0018] Preferably, in step S3, the blue light chips are transferred in groups of three in an orderly manner onto the sapphire substrate coated with glue.

[0019] Preferably, in step S5, the blue light is converted into red light and green light.

[0020] Preferably, in step S5, the spraying amount and the spraying speed need to be controlled during the spraying process to ensure that the quantum dot layer has a uniform thickness and complete coverage.

[0021] Preferably, in step S6, the packaging material needs to have good light transmittance and mechanical strength to ensure the reliability and durability of the device.

[0022] Preferably, in step S7, the laser parameters and the peeling position need to be precisely controlled during the laser peeling process to avoid damage to the chip.

[0023] Preferably, in step S8, the RDL process needs to consider the transmission speed and stability of the signal, as well as the layout and routing optimization of the circuit.

[0024] Preferably, in step S9, the cutting accuracy and cutting speed need to be controlled during the cutting process to avoid damage to the device.

[0025] Preferably, in step S10, the test contents include key indicators of luminous brightness, luminous uniformity, color conversion efficiency and electrical stability.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] (1) By combining blue light Micro COW with quantum dot materials, color conversion is achieved, thereby generating red and green light, further improving the color saturation and fineness of the display device, and helping to improve the overall display quality.

[0028] (2) The use of mass transfer technology and laser lift-off technology makes the chip transfer and packaging process more efficient and precise, reduces losses during the manufacturing process, and helps control manufacturing costs. The device cutting and packaging process has also been optimized to ensure device performance and quality while improving production efficiency.

[0029] (3) The selection of packaging materials focuses on light transmittance and mechanical strength, ensuring the stability and durability of the device during long-term use. Through fine process control and strict testing procedures, the heat dissipation performance and the stability of the electrical and optical properties of the device are ensured.

[0030] (4) This method is suitable for preparing small-size, high-precision quantum dot Micro MIP devices, which meets the demand for display technology to move towards small pitch and micro pitch, and promotes the further development of display technology.

[0031] (5) This method provides a new preparation idea and method for quantum dot display technology, which helps to promote the innovation and progress of related technologies. At the same time, this method has broad application prospects and can be applied to various occasions requiring high-resolution and high-quality displays, such as televisions, monitors, wearable devices and other fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a process flow chart of the present invention;

[0033] Figure 2 It is a transverse cross-sectional view of the MIP of the present invention. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] Embodiment 1:

[0036] See also Figure 1 to Figure 2 As shown, a method for preparing a quantum dot Micro MIP device comprises the following steps:

[0037] S1. Prepare raw materials;

[0038] S2, sapphire coating: coating the receiving adhesive material on the sapphire substrate by a spin coater;

[0039] S3, Mass transfer: transfer the Blu-ray Micro COW through the mass transfer device;

[0040] S4, quantum dot groove: the sapphire substrate after mass transfer is coated with transparent photosensitive material to make quantum dot groove. The design of quantum dot groove needs to be accurately calculated and optimized according to the chip layout and color conversion requirements;

[0041] S5, quantum dot spraying: spray different quantum dot materials on the quantum dot slots to achieve color conversion;

[0042] S6, quantum dot encapsulation: encapsulate the sapphire surface after spraying quantum dots with encapsulation materials;

[0043] S7, laser stripping: transfer the packaged chip to another sapphire substrate coated with glue by laser, so that the PAD is exposed;

[0044] S8, RDL packaging: Through the RDL process, the designed integrated circuit is prepared on the transferred substrate. The integrated circuit is constructed by metal layers and non-metal layers;

[0045] S9, device cutting: remove the sapphire wafer and laser cut the RDL packaged chip;

[0046] S10, device sub-test: Use EL equipment to test the electrical and optical performance of the device.

[0047] In step S1, suitable blue light Micro COW, quantum dot material, sapphire substrate, receiving adhesive, photosensitive adhesive and packaging adhesive are selected to prepare raw materials.

[0048] Select appropriate blue light Micro COW (Chip On Wafer) as the light-emitting basis. These chips must have excellent blue light emission performance and stability.

[0049] Selecting high-quality quantum dot materials that can emit red and green light when excited by blue light is the key to achieving full-color display.

[0050] Prepare a sapphire substrate as the supporting base of the device. Its high light transmittance and good mechanical properties help to improve the overall performance of the device.

[0051] The receiving adhesive material must have good adhesion and processing properties to ensure the stability and accuracy of the chip during the transfer process.

[0052] Photosensitive adhesive is used to make quantum dot grooves and needs to have high sensitivity and good pattern forming ability.

[0053] The encapsulation glue is used to protect the quantum dot layer, prevent it from being affected by the external environment, and ensure the long-term stability of the device.

[0054] In step S3, three blue light chips are transferred in groups to the sapphire substrate coated with adhesive in an orderly manner. During the transfer process, the position accuracy and force must be strictly controlled to avoid chip damage or dislocation.

[0055] In the preparation process of quantum dot Micro MIP devices, mass transfer is the process of transferring a large number of blue light Micro COWs from their original position or carrier to another target position (such as a sapphire substrate coated with glue) in batches and accurately through special mass transfer equipment. The purpose is to achieve large-scale, fast and effective transfer of chips while maintaining high precision and stability, so as to meet the needs of large-scale production and improve production efficiency and yield.

[0056] Mass transfer requires ensuring that the position of each chip during the transfer process is accurate to ensure the smooth progress of subsequent steps, and to achieve rapid transfer of a large number of chips to improve production efficiency. In addition, it is necessary to avoid damage to the chip during the transfer process to ensure that the chip performance is not affected.

[0057] In step S5, the blue light is converted into red light and green light. During the spraying process, the spraying amount and the spraying speed need to be controlled to ensure that the thickness of the quantum dot layer is uniform and the coverage is complete.

[0058] In step S6, the packaging material needs to have good light transmittance and mechanical strength to ensure the reliability and durability of the device.

[0059] In step S7, the laser parameters and the peeling position need to be precisely controlled during the laser peeling process to avoid damage to the chip.

[0060] In step S8 , the RDL process needs to consider the transmission speed and stability of the signal, as well as the layout and routing optimization of the circuit.

[0061] The operation process of the RDL process is as follows:

[0062] Cleaning and preparation: First, the transferred substrate is thoroughly cleaned to remove impurities and residues on the surface and provide a clean environment for subsequent metal deposition.

[0063] Patterning: Use photolithography technology to transfer the designed circuit pattern to the substrate. This includes steps such as coating photoresist, exposure, and development to form the desired circuit pattern.

[0064] Metal deposition: Depositing metal on a patterned substrate to form the connecting lines of the circuit. Commonly used metals include copper, aluminum, gold, etc. This step may involve techniques such as electroplating, chemical vapor deposition (CVD) or physical vapor deposition (PVD).

[0065] Planarization: To remove excess metal and photoresist and ensure surface flatness, a planarization process such as chemical mechanical polishing (CMP) may be required.

[0066] Post-processing: Post-processing steps such as annealing, cleaning and inspection are performed as needed to ensure the quality and performance of the RDL layer.

[0067] Integration and testing: Integrate the RDL layer with other circuit components and verify its functionality and performance through testing.

[0068] In step S9, the cutting accuracy and cutting speed need to be controlled during the cutting process to avoid damage to the device.

[0069] In step S10, the test contents include key indicators such as luminous brightness, luminous uniformity, color conversion efficiency and electrical stability. The preparation process is optimized and adjusted according to the test results to ensure that the performance and quality of the device meet the design requirements.

[0070] Equipment preparation: Ensure that the EL equipment is in normal working condition, including the calibration and stabilization of components such as light source, detection system, and power supply.

[0071] Prepare the standard samples or calibration devices required for testing to verify the accuracy and consistency of the test equipment.

[0072] Sample placement: Carefully place the quantum dot Micro MIP device to be tested on the test platform of the EL device, ensuring good contact between the device and the test platform to avoid introducing additional light loss or electrical interference.

[0073] Test parameter setting: According to the test requirements and device specifications, set the test parameters of the EL device, including voltage, current, light intensity detection range, etc.

[0074] Adjust the light source illumination conditions and detector sensitivity to ensure that the luminescence characteristics and electrical performance of the device can be accurately captured.

[0075] Perform the test: Start the EL device and apply an appropriate electrical signal to the quantum dot Micro MIP device to stimulate the device to emit light.

[0076] Synchronously detect the device's optical properties such as luminous brightness, luminous uniformity, color conversion efficiency, and record related data.

[0077] At the same time, the electrical stability of the device is monitored, including changes in parameters such as current and voltage.

[0078] Data analysis: Process and analyze the collected test data to evaluate whether the electrical and optical performance of the device meets the design requirements or standard specifications.

[0079] Identify possible problems or defects such as uneven light emission, low color conversion efficiency, poor electrical stability, etc.

[0080] Result determination and feedback: Based on the data analysis results, determine whether the quantum dot Micro MIP device is qualified or needs further processing or optimization.

[0081] Feedback the test results to relevant departments or personnel for subsequent production process improvements or quality control measures.

[0082] Select appropriate blue light Micro COW, quantum dot material, sapphire substrate, receiving adhesive, photosensitive adhesive and packaging adhesive to prepare the raw materials, and through the RDL process, regularly combine and amplify the PAD of the Micro chip to obtain a quantum dot MicroMIP device.

[0083] Embodiment 2:

[0084] See also Figure 1 As shown, for high-resolution display applications, the preparation method of quantum dot Micro MIP devices is optimized to improve the pixel density and display effect of the device.

[0085] S1. Prepare raw materials: select blue light Micro COW chips with higher luminous efficiency and corresponding high-performance quantum dot materials, and use thinner sapphire substrates to reduce the overall device thickness and improve light transmittance;

[0086] S2. Sapphire coating: Use high-precision spin coating technology to ensure that the adhesive material is evenly coated on the sapphire substrate to improve the accuracy of chip transfer;

[0087] S3. Mass transfer: Introducing more advanced mass transfer equipment to achieve higher-precision chip positioning and ensure that the chip spacing reaches the micron level to meet high-resolution display requirements;

[0088] S4, quantum dot groove: Use high-precision photolithography technology to make quantum dot grooves to ensure uniform groove width and depth to improve the accuracy of quantum dot spraying and the uniformity of color conversion;

[0089] S5, quantum dot spraying: using a precisely controlled spraying system to spray red and green quantum dots in layers, ensuring uniform thickness of each layer of quantum dots and high color conversion efficiency;

[0090] S6, quantum dot encapsulation: encapsulate the sapphire surface after spraying quantum dots with encapsulation materials;

[0091] S7, laser stripping: transfer the packaged chip to another sapphire substrate coated with glue by laser, so that the PAD is exposed;

[0092] S8, RDL packaging: Through the RDL process, the designed integrated circuit is prepared on the transferred substrate. The integrated circuit is constructed by metal layers and non-metal layers;

[0093] S9, device cutting: remove the sapphire wafer and laser cut the RDL packaged chip;

[0094] S10, device sub-test: Use EL equipment to test the electrical and optical performance of the device.

[0095] Embodiment three:

[0096] See also Figure 1 As shown, a low-cost, large-scale production-suitable quantum dot Micro MIP device preparation method is provided to reduce manufacturing costs and improve production efficiency.

[0097] S1. Prepare raw materials: Select cost-effective blue light Micro COW chips and quantum dot materials, reduce costs while ensuring performance, use economical sapphire substrates and adhesives to reduce raw material expenses;

[0098] S2. Sapphire coating: Use low-cost spin coating equipment and technology to ensure uniform coating of the adhesive material while reducing equipment investment and operating costs;

[0099] S3. Mass transfer: Introduce highly automated mass transfer equipment to reduce manual operations, improve transfer efficiency and consistency, and reduce labor costs;

[0100] S4, quantum dot slot: simplify the quantum dot slot production process, adopt more economical photolithography technology or alternative processes to reduce production costs;

[0101] S5, quantum dot spraying: use large-volume spraying equipment to achieve efficient spraying of quantum dot materials and increase production speed;

[0102] S6, quantum dot encapsulation: encapsulate the sapphire surface after spraying quantum dots with encapsulation materials;

[0103] S7, laser stripping: transfer the packaged chip to another sapphire substrate coated with glue by laser, so that the PAD is exposed;

[0104] S8, RDL packaging: Through the RDL process, the designed integrated circuit is prepared on the transferred substrate. The integrated circuit is constructed by metal layers and non-metal layers;

[0105] S9, device cutting: remove the sapphire wafer and laser cut the RDL packaged chip;

[0106] S10, device sub-test: Use EL equipment to test the electrical and optical performance of the device.

[0107] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for preparing a quantum dot Micro MIP device, characterized in that: The following steps are involved: S1. Prepare raw materials; S2, sapphire coating: coating the receiving adhesive material on the sapphire substrate by a spin coater; S3, Mass transfer: transfer the Blu-ray Micro COW through the mass transfer device; S4, quantum dot groove: the sapphire substrate after mass transfer is coated with transparent photosensitive material to make quantum dot groove; S5, quantum dot spraying: spray different quantum dot materials on the quantum dot slots to achieve color conversion; S6, quantum dot encapsulation: encapsulate the sapphire surface after spraying quantum dots with encapsulation materials; S7, laser stripping: transfer the packaged chip to another sapphire substrate coated with glue by laser, so that the PAD is exposed; S8, RDL packaging: Prepare the designed integrated circuit on the transferred substrate through the RDL process; S9, device cutting: remove the sapphire wafer and laser cut the RDL packaged chip; S10, device sub-test: test the electrical and optical performance of the device through EL equipment; In step S1, suitable blue light Micro COW, quantum dot material, sapphire substrate, receiving adhesive, photosensitive adhesive and packaging adhesive are selected to prepare raw materials; In step S3, three blue light chips are transferred in groups to the sapphire substrate coated with glue in an orderly manner; In step S5, the blue light is converted into red light and green light. During the spraying process, the spraying amount and the spraying speed need to be controlled to ensure that the thickness of the quantum dot layer is uniform and the coverage is complete.

2. The method for preparing a quantum dot Micro MIP device according to claim 1, characterized in that: In step S6, the packaging material needs to have good light transmittance and mechanical strength to ensure the reliability and durability of the device.

3. The method for preparing a quantum dot Micro MIP device according to claim 1, characterized in that: In step S7, the laser parameters and the peeling position need to be precisely controlled during the laser peeling process to avoid damage to the chip.

4. The method for preparing a quantum dot Micro MIP device according to claim 1, characterized in that: In step S8 , the RDL process needs to consider the transmission speed and stability of the signal, as well as the layout and routing optimization of the circuit.

5. The method for preparing a quantum dot Micro MIP device according to claim 1, characterized in that: In step S9, the cutting accuracy and cutting speed need to be controlled during the cutting process to avoid damage to the device.

6. The method for preparing a quantum dot Micro MIP device according to claim 1, characterized in that: In step S10, the test contents include key indicators of luminous brightness, luminous uniformity, color conversion efficiency and electrical stability.

Images