LED Chips and Manufacturing Methods

Abstract

This invention provides a front-mounted LED chip, comprising: a substrate; a first LED device structure; the first LED device structure comprising: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, and a transparent conductive layer sequentially stacked along a direction away from the substrate; wherein the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, and the transparent conductive layer are sequentially stacked on the second step; a first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer; a color conversion layer; the color conversion layer is distributed on the side of the N-type epitaxial layer near the substrate, the sidewall of the first LED device structure, and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode. This technical solution can solve the light leakage problem of LED chips and achieve higher excitation efficiency.

Description

Technical Field

[0001] This invention relates to the field of semiconductor devices, and more particularly to a standard-mounted LED chip and its manufacturing method. Background Technology

[0002] Currently, red LED chips are a pain point in the industry, especially as product size decreases. Due to the size effect of materials, the brightness of GaAS or PAlGaInP materials decreases significantly as the chip size decreases, which cannot meet the commercialization requirements of MicroLED chips. InGaN red light technology suffers from low overall efficiency and difficulty in controlling yield because In is prone to decomposition during high-temperature growth.

[0003] Therefore, how to improve the reliability and excitation efficiency of LED chip products, and how to solve the light leakage problem of LED chip products, are industry pain points that those skilled in the art need to overcome. Summary of the Invention

[0004] This invention provides a standard-mount LED chip and its manufacturing method to solve the problems of light leakage in LED chips and improve excitation efficiency.

[0005] According to a first aspect of the present invention, a standard-mount LED chip is provided, comprising:

[0006] Substrate;

[0007] A first LED device structure; the first LED device structure includes: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, and a transparent conductive layer stacked sequentially in a direction away from the substrate; wherein, the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, and the transparent conductive layer are stacked sequentially on the second step;

[0008] A first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer;

[0009] Color conversion layer; the color conversion layer is distributed on the side of the N-type epitaxial layer near the substrate, the sidewall of the first LED device structure and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode.

[0010] The thickness of the color conversion layer is greater than 4 μm.

[0011] Optionally, the upright LED chip further includes: a first protective layer; the first protective layer covers the surface of the color conversion layer on the sidewall of the first LED device structure and the surface of the transparent conductive layer.

[0012] The thickness of the first protective layer is 10-5000 Å.

[0013] Optionally, the color conversion layer is a red color conversion layer.

[0014] Optionally, the longitudinal section of the color conversion layer distributed on the side of the N-type epitaxial layer near the substrate is triangular.

[0015] Optionally, the material of the first protective layer is any one or a combination of alumina, silicon nitride, and silicon oxide. According to a second aspect of the present invention, a flip-chip LED chip is provided, and a first LED device structure includes: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, and a transparent conductive layer sequentially stacked along a direction away from the substrate; wherein the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, and the transparent conductive layer are sequentially stacked on the second step;

[0016] The first color conversion layer and the first reflective mirror layer; the first reflective mirror layer is formed on the surface of the transparent conductive layer; the first color conversion layer is a color conversion layer distributed on the side of the N-type epitaxial layer near the substrate;

[0017] A first electrode and a second electrode; the second electrode is formed on the surface of the first reflective mirror layer; the first electrode is formed on the first step of the N-type epitaxial layer.

[0018] Optionally, the flip-chip LED further includes a second protective layer; the second protective layer covers the sidewalls of the first LED device structure and the top of the first reflector layer.

[0019] Optionally, the flip-chip LED further includes a second color conversion layer; the second color conversion layer is formed on the sidewall of the first LED device structure.

[0020] Optionally, the second protective layer covers the surface of the second color conversion layer and the surface of the first reflective layer.

[0021] According to a third aspect of the present invention, a method for manufacturing a standard-mount LED chip is provided, for manufacturing the standard-mount LED chip according to any one of the first aspects of the present invention, comprising:

[0022] Provide one of the aforementioned substrates;

[0023] A plurality of the first LED device structures are formed on the substrate;

[0024] Forming the first electrode and the second electrode;

[0025] The color conversion layer is formed; the color conversion layer is distributed on the side of the N-type epitaxial layer near the substrate and the sidewall of the first LED device structure, as well as on the surface of the transparent conductive layer, and exposes the first electrode and the second electrode.

[0026] Optionally, after forming the color conversion layer, the method further includes: forming the first protective layer; the first protective layer covers the surface of the color conversion layer.

[0027] Optionally, forming a plurality of the first LED device structures on the substrate specifically includes:

[0028] The N-type epitaxial layer, the quantum well light-emitting layer, and the P-type epitaxial layer are sequentially formed on the substrate in a direction away from the substrate;

[0029] An N-type epitaxial layer with a stepped structure is formed; the stepped structure includes a first step and a second step.

[0030] A first channel is formed; the first channel is formed between several of the first LED device structures;

[0031] The transparent conductive layer is formed on the surface of the P-type epitaxial layer.

[0032] Optionally, while sequentially forming the N-type epitaxial layer, the quantum well light-emitting layer, and the P-type epitaxial layer on the substrate in a direction away from the substrate, the method further includes: forming a sacrificial layer; the sacrificial layer is distributed on the surface of the substrate; wherein the longitudinal section of the sacrificial layer is polygonal.

[0033] Optionally, after forming the first channel, the method further includes:

[0034] The sacrificial layer is removed to form a first cavity; wherein the color conversion layer distributed on the side of the N-type epitaxial layer near the substrate fills the first cavity.

[0035] Optionally, the color conversion layer can be formed by immersion or spin coating.

[0036] Optionally, photolithography or plasma etching may be used to form the first channel.

[0037] Optionally, the sacrificial layer can be removed using either wet etching or dry etching.

[0038] Optionally, the material of the first protective layer is alumina, silicon nitride, silicon oxide, or a combination thereof. Optionally, the material of the sacrificial layer is a high-temperature resistant dielectric material.

[0039] According to a fourth aspect of the present invention, a method for manufacturing a flip-chip LED is provided, for manufacturing the flip-chip LED according to any one of the second aspects of the present invention, comprising:

[0040] Provide one of the aforementioned substrates;

[0041] A plurality of the first LED device structures and the first reflective mirror layer are formed on the substrate; the first reflective mirror layer is formed on the surface of the transparent conductive layer;

[0042] The first electrode and the second electrode are formed; the second electrode is formed on the surface of the first reflective layer; the first electrode is formed on the first step of the N-type epitaxial layer;

[0043] The first color conversion layer is formed on the side of the N-type epitaxial layer near the substrate.

[0044] Optionally, after forming the first color conversion layer, the method further includes:

[0045] A second protective layer is formed; the second protective layer covers the sidewall of the first LED device structure and the surface of the first reflector layer.

[0046] Optionally, forming the first color conversion layer further includes:

[0047] A second color conversion layer is formed; the second color conversion layer is formed on the sidewall of the first LED device structure.

[0048] Optionally, the second protective layer covers the surface of the second color conversion layer and the surface of the first reflective layer.

[0049] According to a fifth aspect of the present invention, an electronic device is provided, comprising a conventional LED chip as described in any one of the first aspects of the present invention, or / and a flip-chip LED chip as described in any one of the second aspects of the present invention.

[0050] According to a sixth aspect of the present invention, a method for manufacturing an electronic device is provided, comprising the method for manufacturing a conventional LED chip as described in any of the third aspects of the present invention, or / and the method for manufacturing a flip-chip LED as described in any of the fourth aspects of the present invention.

[0051] The present invention provides a positive-mounted LED chip, which, by setting a color conversion layer, is distributed on the side of the N-type epitaxial layer near the substrate, the sidewall of the first LED device structure, and the surface of the transparent conductive layer. This allows the positive-mounted LED chip to achieve 360° full coverage of the first LED device structure by the color conversion layer, solving the light leakage problem of the positive-mounted LED chip. Furthermore, due to the 360° full coverage of the color conversion layer, higher excitation efficiency can be achieved.

[0052] Furthermore, the flip-chip provided by the present invention, through the combination of a first reflective mirror layer and a first color conversion layer, solves the light leakage problem of the flip-chip by distributing the first color conversion layer on the side of the N-type epitaxial layer closer to the substrate. Furthermore, due to the presence of the first color conversion layer, higher excitation efficiency can be achieved. Attached Figure Description

[0053] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0054] Figure 1 This is a schematic diagram of the structure of a standard-mounted LED chip provided in an embodiment of the present invention;

[0055] Figure 2 This is a schematic diagram of the structure of a flip-chip LED provided in a specific embodiment of the present invention;

[0056] Figure 3 This is a schematic diagram of the structure of a flip-chip LED provided in another specific embodiment of the present invention;

[0057] Figure 4 This is a flowchart illustrating a method for manufacturing a standard LED chip according to an embodiment of the present invention;

[0058] Figure 5 This is a flowchart illustrating a method for fabricating a flip-chip LED according to an embodiment of the present invention.

[0059] Figure 6 This is a schematic diagram of different process stages of LED chip fabrication according to an embodiment of the present invention. Figure 1 ;

[0060] Figure 7-8 This is a schematic diagram of different process stages according to the method for manufacturing upright LED chips provided in an embodiment of the present invention;

[0061] Figure 9-10 This is a schematic diagram of different process stages according to a specific embodiment of the present invention for manufacturing a flip-chip LED;

[0062] Figure 11-12 This is a schematic diagram of different process stages according to another specific embodiment of the present invention;

[0063] Explanation of reference numerals in the attached figures:

[0064] 101-Substrate;

[0065] 102-N type epitaxial layer;

[0066] 103-Quantum well light-emitting layer;

[0067] 104-P type epitaxial layer;

[0068] 105 - Sacrificial Layer;

[0069] 106 - Transparent conductive layer;

[0070] 107 - First electrode;

[0071] 108 - Second electrode;

[0072] 109-color conversion layer;

[0073] 110 - First protective layer;

[0074] 111 - Second protective layer;

[0075] 112 - First color conversion layer;

[0076] 113 - First reflecting mirror layer;

[0077] 114 - Second color conversion layer. Detailed Implementation

[0078] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0079] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0080] Currently, red LED chips are a pain point in the industry. Due to the size effect of materials, the brightness of LED chip products decreases significantly as the size of the product material decreases. For example, when converting blue light to red light, the unencapsulated surface in the LED device will cause blue light leakage, resulting in impure light color emitted by the device. Moreover, InGaN red light technology suffers from low overall conversion efficiency and difficulty in controlling yield due to the easy decomposition of In during high-temperature growth. It cannot meet the commercialization requirements of MicroLED chips.

[0081] In view of this, the inventors of this application discovered through repeated experiments that, for flip-chip LED structures, by filling the bottom of the N-type epitaxial layer (GaN material), and for conventional LEDs, the quantum dots fully encapsulate the GaN material 360 degrees, which can achieve higher excitation efficiency and solve the problem of light leakage in the product.

[0082] The technical solution of the present invention will be described in detail below with reference to specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0083] Please refer to Figures 1-12 According to an embodiment of the present invention, a standard-mount LED chip is provided, comprising:

[0084] Substrate 101; the substrate 101 may be a sapphire substrate 101, a silicon substrate 101, a silicon carbide substrate 101 or a diamond substrate 101, preferably a sapphire growth substrate 101;

[0085] A first LED device structure includes: an N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104, and a transparent conductive layer 106, stacked sequentially along a direction away from the substrate 101; wherein, the N-type epitaxial layer 102 includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104, and the transparent conductive layer 106 are stacked sequentially on the second step; specifically, the material of the P-type epitaxial layer 104 is p-GaN; the material of the N-type epitaxial layer 102 is n-GaN.

[0086] A first electrode 107 and a second electrode 108; the first electrode 107 is formed on the first step; the second electrode 108 is formed on the surface of the transparent conductive layer 106;

[0087] Color conversion layer 109; the color conversion layer 109 is distributed on the side of the N-type epitaxial layer 102 near the substrate 101, the sidewall of the first LED device structure, and the surface of the transparent conductive layer 106, and exposes the first electrode 107 and the second electrode 108; the structure of the upright LED chip is as follows Figure 1 As shown;

[0088] Wherein, the first electrode 107 represents the N electrode; the second electrode 108 represents the P electrode.

[0089] This invention provides a standard LED chip that, by incorporating a color conversion layer, achieves 360° full coverage of the first LED device structure. This solves the light leakage problem of standard LED chips. Furthermore, due to the 360° full coverage color conversion layer, the device is surrounded by the color conversion layer. In any direction, the light emitted by the chip first excites the color conversion layer before emitting the corresponding white, green, or red light, thus achieving higher excitation efficiency. Simultaneously, the bottom color conversion layer provides natural water and oxygen isolation.

[0090] In one embodiment, the upright LED chip further includes: a first protective layer 110; the first protective layer 110 covers the surface of the color conversion layer 109 on the sidewall of the first LED device structure and the surface of the transparent conductive layer 106. In a specific example, the material of the first protective layer 110 is any one or a combination of alumina, silicon nitride, and silicon oxide.

[0091] The first protective layer 110 serves to isolate water and oxygen, protecting the color conversion layer 109 that is exposed to the outside and distributed on the sidewalls of the first LED device structure and the surface of the transparent conductive layer 106.

[0092] In one embodiment, the color conversion layer 109 is a red color conversion layer, a yellow color conversion layer, or a green color conversion layer.

[0093] Since the color conversion layer 109 is distributed on the side of the N-type epitaxial layer 102 near the substrate 101, the sidewall of the first LED device structure, and the surface of the transparent conductive layer 106, the upright LED chip can achieve 360° full wrapping of the color conversion layer 109 around the first LED device structure, thereby achieving higher excitation efficiency and solving the problem of light leakage in the product.

[0094] Currently, red LED chips are a pain point in the industry. Due to the size effect of materials, the brightness of LED chip products decreases significantly as the size of the product material decreases. Moreover, InGaN red light technology suffers from low overall conversion efficiency and difficulty in controlling yield due to the easy decomposition of In during high-temperature growth. It cannot meet the commercialization needs of MicroLED chips.

[0095] In one embodiment of the present invention, it is specifically proposed that the color conversion layer 109 is a red color conversion layer 109.

[0096] In the technical solution provided in this embodiment, since the red conversion layer 109 is distributed on the side of the N-type epitaxial layer 102 near the substrate 101, the sidewall of the first LED device structure, and the surface of the transparent conductive layer 106, the upright LED chip can achieve 360° full wrapping of the red color conversion layer 109 around the first LED device structure, which solves the problem of red light leakage in LED chip products and achieves higher red light excitation efficiency.

[0097] In other embodiments, the color conversion layer 109 can also be a yellow color conversion layer 109 or a red color conversion layer 109. This solves the problem of light leakage of yellow or green light in LED chip products, respectively, and achieves higher excitation efficiency of yellow or green light.

[0098] In one embodiment, the color conversion layer 109 distributed on the side of the N-type epitaxial layer 102 near the substrate 101 has a triangular or other shape in its longitudinal section.

[0099] In one embodiment, the longitudinal section of the color conversion layer 109 distributed on the side of the N-type epitaxial layer 102 near the substrate 101 is triangular;

[0100] When the longitudinal section of the color conversion layer 109 is a triangular structure, it can provide support for the device in the hollow state during the manufacturing process, ensuring the smooth progress of the manufacturing process.

[0101] In one embodiment, the longitudinal cross-section of the color conversion layer 109 distributed on the side of the N-type epitaxial layer 102 near the substrate 101 has other shapes.

[0102] According to one embodiment of the present invention, a flip-chip LED is also provided, comprising:

[0103] A first LED device structure includes: an N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104, and a transparent conductive layer 106, stacked sequentially in a direction away from the substrate; wherein, the N-type epitaxial layer 102 includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104, and the transparent conductive layer 106 are stacked sequentially on the second step; a first color conversion layer 112 and a first reflective mirror layer 113; the first reflective mirror layer 113 is formed on the surface of the transparent conductive layer 106; the first color conversion layer 112 represents a color conversion layer 109 distributed on the side of the N-type epitaxial layer 102 near the substrate 101; the first reflective mirror layer is used to reflect light beams to the light-emitting surface of the flip-chip LED.

[0104] The first electrode 107 and the second electrode 108; the second electrode 108 is formed on the surface of the first reflective mirror layer 113; the first electrode 107 is formed on the first step of the N-type epitaxial layer 102. The specific structure of the flip-chip LED is as follows: Figure 2 or Figure 3 As shown;

[0105] The present invention provides a flip-chip LED that solves the light leakage problem of flip-chip LEDs by using a first reflective mirror layer in combination with a first color conversion layer. Since the first color conversion layer is distributed on the side of the N-type epitaxial layer close to the substrate, the light leakage problem of flip-chip LEDs is solved. Furthermore, the presence of the first color conversion layer enables higher excitation efficiency.

[0106] In one specific embodiment, the flip-chip LED includes only a first color conversion layer; in another specific embodiment; the structures of the two flip-chip LEDs are described in detail below:

[0107] In the first specific embodiment, the flip-chip LED chip only includes a first color conversion layer, such as Figure 2 As shown; the specific structure of the flip-chip LED is as follows:

[0108] In one embodiment, the flip-chip LED further includes a second protective layer 111; the second protective layer 111 covers the sidewall of the first LED device structure and the top of the first reflector layer 113.

[0109] The second protective layer 111 serves to isolate water and oxygen, protect the exposed sidewalls of the first LED device structure, and protect the surface of the transparent conductive layer 106.

[0110] In another embodiment, the structure of the flip-chip LED is as follows: the flip-chip LED includes not only the first color conversion layer 112, but also a second color conversion layer 114; the second color conversion layer 114 is formed on the sidewall of the first LED device structure; as shown Figure 3 As shown;

[0111] In this embodiment, the technical solution not only forms a second color conversion layer 114 on the side of the bottom N-type epitaxial layer 102 near the substrate 101, but also on the sidewall of the first LED device structure. Therefore, it can achieve higher color conversion efficiency and better light leakage prevention effect.

[0112] Since the flip-chip LED includes a first reflector layer 113, which can reflect the light beam back, the color conversion layer 109 no longer needs to be disposed on the surface of the first reflector layer 113.

[0113] In one embodiment, the second protective layer 111 covers the surface of the second color conversion layer 114 and the surface of the first reflective mirror layer 113.

[0114] The second protective layer 111 serves to isolate water and oxygen, protect the second conversion layer exposed on the sidewall of the first LED device structure, and protect the surface of the transparent conductive layer 106.

[0115] In other specific examples, the first LED device structure further includes a buffer layer; the buffer layer is formed between the substrate and the N-type epitaxial layer.

[0116] Secondly, according to an embodiment of the present invention, a method for manufacturing a positive-mounted LED chip is also provided, for manufacturing the positive-mounted LED chip described in any of the foregoing embodiments of the present invention. A flowchart illustrating the method for manufacturing the positive-mounted LED chip is shown below. Figure 4 As shown, the manufacturing method includes:

[0117] S11: Provide one of the substrates 101;

[0118] S12: A plurality of the first LED device structures are formed on the substrate 101;

[0119] S13: Form the first electrode 107 and the second electrode 108; as shown in the example Figure 7 As shown;

[0120] S14: Form the color conversion layer 109; the color conversion layer 109 is distributed on the side of the N-type epitaxial layer 102 near the substrate 101 and the sidewall of the first LED device structure, as well as on the surface of the transparent conductive layer 106, and exposes the first electrode 107 and the second electrode 108 for reference. Figure 8 The device structure shown.

[0121] The present invention provides a method for manufacturing a standard LED chip, which solves the light leakage problem of the standard LED chip by setting a color conversion layer. Furthermore, due to the setting of a 360° fully enclosed color conversion layer, higher excitation efficiency can be achieved.

[0122] In one embodiment, the color conversion layer 109 is formed by immersion or spin coating.

[0123] In one embodiment, after forming the color conversion layer 109, the method further includes: forming the first protective layer 110; the first protective layer 110 covers the surface of the color conversion layer 109; the device structure after forming the first protective layer 110 can be referred to Figure 8 The structure is shown. In one specific example, the material of the first protective layer 110 is aluminum oxide, silicon nitride, silicon oxide, or a combination thereof.

[0124] In one embodiment, step S12, forming a plurality of the first LED device structures on the substrate 101, specifically includes:

[0125] S121: The N-type epitaxial layer 102, the quantum well light-emitting layer 103, and the P-type epitaxial layer 104 are sequentially formed on the substrate 101 in a direction away from the substrate 101; see reference. Figure 6 The device structure shown;

[0126] S122: Forming the N-type epitaxial layer 102 with a stepped structure; the stepped structure includes a first step and a second step; when forming the N-type epitaxial layer 102 with the stepped structure, photolithography and plasma etching are used.

[0127] S123: Form a first channel; the first channel is formed between a plurality of the first LED device structures; in one embodiment, the first channel is formed by photolithography or plasma etching; when the first channel is formed by photolithography or plasma etching, the N-type epitaxial layer 102 needs to be etched down to the surface of the substrate 101; the first channel is used as an etching channel for subsequent removal of the sacrificial layer 105.

[0128] S124: Forming the transparent conductive layer 106; the transparent conductive layer 106 is formed on the surface of the P-type epitaxial layer 104; see reference for... Figure 7 The device structure shown.

[0129] In one embodiment, step S121, while sequentially forming the N-type epitaxial layer 102, the quantum well light-emitting layer 103, and the P-type epitaxial layer 104 on the substrate 101 in a direction away from the substrate 101, also includes: forming a sacrificial layer 105; the sacrificial layer 105 is distributed on the surface of the substrate 101; wherein, the longitudinal section of the sacrificial layer 105 is polygonal or other arbitrary shape; the material of the sacrificial layer 105 is a high-temperature resistant dielectric material; in a specific example, silicon oxide or silicon nitride; the device structure after forming the sacrificial layer 105 is as follows: Figure 6 As shown.

[0130] In one embodiment, after forming the first channel, step S123 further includes:

[0131] Remove the sacrificial layer 105 to form a first cavity; the device structure after forming the first cavity is as follows. Figure 7 As shown; wherein, the color conversion layer 109 formed in the subsequent step S14, which is distributed on the side of the N-type epitaxial layer 102 near the substrate 101, fills the first cavity.

[0132] In one embodiment, the sacrificial layer 105 is removed by wet etching or dry etching.

[0133] Step S14, after forming the color conversion layer 109, further includes: partitioning the substrate 101 to form a plurality of upright LED chips; the device structure after partitioning is as follows: Figure 8 As shown.

[0134] Furthermore, according to an embodiment of the present invention, a method for fabricating a flip-chip LED is also provided, for fabricating the flip-chip LED described in any of the foregoing embodiments of the present invention. A schematic diagram of the process flow of this fabrication method is shown below. Figure 5 As shown, the manufacturing method includes:

[0135] S21: Provide one of the substrates 101;

[0136] S22: A plurality of the first LED device structures and the first reflective mirror layer 113 are formed on the substrate 101; the first reflective mirror layer 113 is formed on the surface of the transparent conductive layer 106;

[0137] S23: Form the first electrode 107 and the second electrode 108; the second electrode 108 is formed on the surface of the first reflective mirror layer 113; the first electrode 107 is formed on the first step of the N-type epitaxial layer 102;

[0138] S24: Forming the first color conversion layer 112; the first color conversion layer 112 is formed on the side of the N-type epitaxial layer 102 near the substrate 101, such as... Figure 9 or Figure 11 As shown.

[0139] Furthermore, the present invention provides a method for manufacturing a flip-chip LED, which solves the light leakage problem of flip-chip LEDs by using a first reflective mirror layer in combination with a first color conversion layer. Moreover, due to the addition of the first color conversion layer, higher excitation efficiency can be achieved.

[0140] Step S22, forming a plurality of the first LED device structures on the substrate 101. The specific steps are as described in the foregoing part of this application, except that: before forming the first electrode 107 and the second electrode 108, a first reflective mirror layer 113 needs to be formed on the surface of the transparent conductive layer 106. The other steps are the same as described in the foregoing part, and will not be repeated here.

[0141] In one embodiment, step S24, after forming the first color conversion layer 112, further includes:

[0142] The second protective layer 111 is formed; the second protective layer 111 covers the sidewall of the first LED device structure and the surface of the first reflector layer 113; thereby forming the flip-chip of the aforementioned first structure.

[0143] To achieve better color conversion efficiency and better light leakage prevention, in one embodiment, step S24, when forming the first color conversion layer 112, further includes:

[0144] A second color conversion layer 114 is formed; the second color conversion layer 114 is formed on the sidewall of the first LED device structure.

[0145] In one embodiment, the second protective layer 111 covers the surface of the second color conversion layer 114 and the surface of the first reflective mirror layer 113.

[0146] The thickness of the color conversion layer 109 in the flip-chip LED chip structure or the upright LED chip structure provided by the present invention is greater than 4 μm; the thickness of the protective layer is greater than 10-5000 Å.

[0147] Step S24, forming the first color conversion layer 112 (e.g. Figure 8(As shown), or after simultaneously forming the first color conversion layer 112 and the second color conversion layer 114, the method further includes: partitioning the substrate 101 to form a plurality of flip-chip LEDs, the device structure after partitioning being as follows: Figure 10 As shown; in the second specific embodiment, the device structure after the separation is as follows Figure 12 As shown;

[0148] In addition, according to one embodiment of the present invention, an electronic device is also provided, including a conventional LED chip as described in any of the foregoing embodiments of the present invention, or / and a flip-chip LED chip as described in any of the foregoing embodiments of the present invention.

[0149] Finally, according to an embodiment of the present invention, a method for manufacturing an electronic device is also provided, including the method for manufacturing a conventional LED chip as described in any of the foregoing embodiments of the present invention, or / and the method for manufacturing a flip-chip LED as described in any of the foregoing embodiments of the present invention.

[0150] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A standard-mount LED chip, characterized in that, include: Substrate; First LED device structure; The first LED device structure includes: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, and a transparent conductive layer stacked sequentially in a direction away from the substrate; wherein, the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, and the transparent conductive layer are stacked sequentially on the second step; A first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer; Color conversion layer; the color conversion layer is distributed on the side of the N-type epitaxial layer near the substrate, the sidewall of the first LED device structure and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode.

2. The upright LED chip according to claim 1, characterized in that, The thickness of the color conversion layer is greater than 4 μm.

3. The upright LED chip according to claim 2, characterized in that, The upright LED chip further includes: a first protective layer; the first protective layer covers the color conversion layer on the sidewall of the first LED device structure and the surface of the color conversion layer on the surface of the transparent conductive layer.

4. The upright LED chip according to claim 3, characterized in that, The thickness of the first protective layer is 10-5000 Å.

5. The upright LED chip according to claim 4, characterized in that, The color conversion layer is a red color conversion layer.

6. The upright LED chip according to claim 5, characterized in that, The longitudinal section of the color conversion layer distributed on the side of the N-type epitaxial layer near the substrate is triangular.

7. The upright LED chip according to claim 6, characterized in that, The material of the first protective layer is any one or a combination of aluminum oxide, silicon nitride, and silicon oxide.

8. A method for manufacturing a standard-mount LED chip, used to manufacture the standard-mount LED chip according to any one of claims 1-7, characterized in that, include: Provide one of the aforementioned substrates; A plurality of the first LED device structures are formed on the substrate; Forming the first electrode and the second electrode; Form the color conversion layer; The color conversion layer is distributed on the side of the N-type epitaxial layer near the substrate, the sidewall of the first LED device structure, and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode.

9. The method for manufacturing a standard-mount LED chip according to claim 8, characterized in that, After forming the color conversion layer, the method further includes: forming a first protective layer; the first protective layer covers the surface of the color conversion layer.

10. The method for manufacturing a standard-mount LED chip according to claim 9, characterized in that, Forming a plurality of the first LED device structures on the substrate specifically includes: The N-type epitaxial layer, the quantum well light-emitting layer, and the P-type epitaxial layer are sequentially formed on the substrate in a direction away from the substrate; An N-type epitaxial layer with a stepped structure is formed; the stepped structure includes a first step and a second step. A first channel is formed; the first channel is formed between several of the first LED device structures; The transparent conductive layer is formed on the surface of the P-type epitaxial layer.

11. The method for manufacturing a standard-mount LED chip according to claim 10, characterized in that, While sequentially forming the N-type epitaxial layer, the quantum well light-emitting layer, and the P-type epitaxial layer on the substrate in a direction away from the substrate, the method also includes: forming a sacrificial layer; the sacrificial layer is distributed on the surface of the substrate.

12. The method for manufacturing a standard-mount LED chip according to claim 11, characterized in that, After the first channel is formed, the following is also included: The sacrificial layer is removed to form a first cavity; wherein the color conversion layer distributed on the side of the N-type epitaxial layer near the substrate fills the first cavity.

13. The method for manufacturing a standard-mount LED chip according to claim 12, characterized in that, The color conversion layer is formed by immersion or spin coating.

14. The method for manufacturing a standard-mount LED chip according to claim 13, characterized in that, The first channel is formed using photolithography or plasma etching.

15. The method for manufacturing a standard-mount LED chip according to claim 14, characterized in that, The sacrificial layer is removed by either wet etching or dry etching.

16. The method for manufacturing a standard-mount LED chip according to claim 15, characterized in that, The material of the sacrificial layer is a high-temperature resistant medium material.

17. An electronic device, characterized in that, Includes the standard-mounted LED chip as described in any one of claims 1-7.

18. A method for manufacturing an electronic device, characterized in that, The method for manufacturing a standard-mount LED chip as described in any one of claims 8-16.

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