Method for manufacturing a loading member and a loading table, and loading member, loading table, thinning system

Abstract

The application provides a loading piece, a manufacturing method of a wafer loading table, and the loading piece, the wafer loading table, and a wafer thinning system. The loading piece is used for adsorbing a wafer and comprises the following steps: adding a porous material into a mold to sinter the adsorption part into a porous structure with air permeability; and manufacturing a blocking part with a non-air-permeable structure in a region of the adsorption part corresponding to a notch of the wafer, and forming the blocking part and the adsorption part into an integrated structure to prevent particulate matters from entering the adsorption part from the notch of the wafer. The manufacturing method of the loading piece can improve the yield of the loading piece, is simple to process, and reduces the waste rate.

Description

Technical Field

[0001] This application relates to the field of wafer thinning technology, and more particularly to a method for manufacturing a loading device and a wafer loading stage, as well as the loading device, the wafer loading stage, and the wafer thinning system. Background Technology

[0002] The integrated circuit industry is the core of the information technology industry, playing a crucial role in promoting the digital and intelligent transformation and upgrading of the manufacturing industry. Chips are the carriers of integrated circuits, and chip manufacturing involves processes such as integrated circuit design, wafer manufacturing, wafer processing, electrical measurement, dicing, packaging, and testing.

[0003] In the back-end process of integrated circuit manufacturing, in order to reduce the packaging height, reduce the chip package volume, improve the chip's thermal diffusion efficiency, electrical performance, mechanical performance, and reduce the chip's processing workload, the wafer needs to undergo back-side grinding before subsequent packaging to thin the wafer to a predetermined thickness; the chip thickness after back-side grinding can even be less than 5% of the initial thickness.

[0004] The wafer thinning process is carried out on a thinning device, in which the wafer loading stage is one of the key components of the wafer thinning device, which is used to hold the wafer to be ground.

[0005] Wafer loading stages typically include porous chucks (ceramic chucks), which hold the wafers to be ground by vacuum adsorption. Therefore, vacuum is an essential condition for wafer loading stages to adsorb substrates.

[0006] To facilitate positioning, large wafers are provided with a notch on their outer periphery. The wafer, placed on the wafer loading stage, is held in place by a negative pressure created between the chuck and the wafer. Typically, because the wafer's notch is open to the external atmosphere, partial air leakage can occur, affecting the vacuum level between the chuck and the wafer, thus impacting the reliability of wafer holding. Furthermore, grinding debris and other particles generated during wafer grinding can enter the chuck's interior along the notch, affecting the chuck's flatness. Alternatively, a large amount of debris can accumulate at the notch, increasing the difficulty of wafer cleaning. Summary of the Invention

[0007] In view of this, the present application provides a method for manufacturing a loading component and a wafer loading stage, as well as a loading component, a wafer loading stage, and a wafer thinning system, which can improve the yield of the loading component, simplify processing, and reduce the scrap rate.

[0008] According to a method for manufacturing a loading component based on a first aspect of the present invention, the loading component is used to adsorb a wafer, comprising: adding a porous material into a mold to sinter an adsorption portion with a permeable porous structure; manufacturing a non-permeable sealing portion in a region of the adsorption portion corresponding to a notch in the wafer; and forming the sealing portion and the adsorption portion as an integral structure to prevent particulate matter from entering the adsorption portion from the notch in the wafer.

[0009] Optionally, the step of creating a non-permeable sealing portion in the region of the adsorption portion corresponding to the notch of the wafer, and forming the sealing portion and the adsorption portion into an integral structure, includes: pouring a dense filling slurry into the region of the adsorption portion corresponding to the notch of the wafer to create the sealing portion.

[0010] Optionally, the step of creating a non-permeable sealing portion in the region of the adsorption portion corresponding to the notch of the wafer, and forming the sealing portion and the adsorption portion into an integral structure, includes: using a porous material in the region corresponding to the sealing portion, and removing the pore-forming agent to form the sealing portion.

[0011] Optionally, the step of creating a non-permeable sealing portion in the region of the adsorption portion corresponding to the notch of the wafer, and forming the sealing portion and the adsorption portion into an integral structure, includes: opening a mating groove in the region of the adsorption portion corresponding to the notch of the wafer; manufacturing the sealing portion; and placing the sealing portion into the mating groove to form the sealing portion and the adsorption portion into an integral structure.

[0012] Optionally, adding raw materials into the mold to sinter and form an adsorption part with a breathable structure includes: adding raw materials into the mold to sinter and form an adsorption part with a mating groove; forming the sealing part and the adsorption part into an integral structure includes: manufacturing the sealing part, and bonding or sintering the sealing part and the adsorption part into an integral structure.

[0013] Optionally, the manufacturing of the sealing part, which involves placing the sealing part into the mating groove, includes: manufacturing a block-shaped sealing part that matches the shape of the mating groove, and assembling the sealing part into the mating groove.

[0014] Optionally, the manufacturing of the sealing part, which involves placing the sealing part into the mating groove, includes: applying a dense filling slurry to the surface of the mating groove to form a layered sealing part.

[0015] Optionally, the provision of a non-permeable sealing portion in the region of the adsorption portion corresponding to the notch of the wafer includes: along the region of the adsorption portion corresponding to the notch of the wafer, on the contour of the horizontal plane where the adsorption portion and the wafer are attached, a sealing portion extending along the thickness direction of the adsorption portion is provided, the sealing portion forming a partition interface extending along the thickness direction of the adsorption portion to prevent particulate matter from entering the side of the sealing portion opposite to the notch of the wafer from the side of the sealing portion facing the notch of the wafer.

[0016] Optionally, the sealing portion extending along the thickness direction of the adsorption portion is provided along the outline of the region of the adsorption portion corresponding to the notch of the wafer on the horizontal plane where the adsorption portion and the wafer are attached, including: injecting dense filling slurry along the thickness direction of the adsorption portion along the outline of the region of the adsorption portion corresponding to the notch of the wafer on the horizontal plane where the adsorption portion and the wafer are attached by pressurized injection to form the sealing portion.

[0017] Optionally, the depth of the sealing portion along the thickness direction of the adsorption portion is not less than the amount of wear in the thickness direction of the loading component during use.

[0018] Optionally, the depth of the mating groove is not less than 2 mm.

[0019] According to a second aspect of the present invention, a method for manufacturing a wafer loading stage includes: manufacturing a support member and forming a placement groove in the middle of the support member; manufacturing a loading member that is coupled into the placement groove; and the loading member and the support member forming the wafer loading stage.

[0020] Optionally, the manufacturing of the loading component integrated into the placement groove includes: manufacturing an adsorption portion of the loading component that matches the shape of the placement groove, placing the adsorption portion into the placement groove to bond it integrally with the support; manufacturing a non-permeable sealing portion in the region of the adsorption portion corresponding to the notch of the wafer, and forming the sealing portion and the adsorption portion into an integral structure.

[0021] Optionally, the step of creating a non-permeable sealing portion in the region of the adsorption portion corresponding to the notch in the wafer, and forming the sealing portion and the adsorption portion into an integral structure, includes: opening a mating groove in the region of the adsorption portion corresponding to the notch in the wafer; manufacturing the sealing portion; and placing the sealing portion into the mating groove to form the sealing portion and the adsorption portion into an integral structure.

[0022] Optionally, the manufacturing of the sealing part, which involves placing the sealing part into the mating groove, includes: manufacturing a block-shaped sealing part that matches the shape of the mating groove, and assembling the sealing part into the mating groove.

[0023] Optionally, the manufacturing of the sealing part, which involves placing the sealing part into the mating groove, includes: applying a dense filling slurry to the surface of the mating groove to form a layered sealing part.

[0024] Optionally, manufacturing a loading component integrated into the placement groove includes: manufacturing the adsorption portion and the blocking portion of the loading component, forming the blocking portion and the adsorption portion into an integral structure; and disposing both the adsorption portion and the blocking portion within the placement groove.

[0025] Optionally, the sealing portion is formed by pouring a dense filling slurry into the area corresponding to the gap in the wafer of the adsorption portion.

[0026] Optionally, the sealing portion is formed by using a porous material in the area corresponding to the sealing portion and removing the pore-forming agent.

[0027] Optionally, the sealing part is formed by applying a dense filling slurry to the surface of the mating groove to form a layered sealing part.

[0028] Optionally, when the wafer loading stage adsorbs the wafer, the sealing portion prevents particulate matter from entering the adsorption portion from the position where the wafer notch coincides with the loading component.

[0029] Optionally, the support member has an internal ventilation pipe that is connected to the loading member.

[0030] According to a third aspect of the present invention, a loading member is manufactured by the manufacturing method of the loading member of the first aspect described above. The loading member includes an adsorption part with a breathable structure and a sealing part with a non-breathable structure, which can be formed into an integral structure. The adsorption part can adsorb a wafer. The sealing part is configured to correspond to the notch position of the wafer when the wafer is placed in the loading member, so as to suppress airflow from communicating with the outside through the notch of the wafer, and at the same time, suppress particulate matter from entering the adsorption part through the notch of the wafer.

[0031] Optionally, the adsorption portion is formed of porous ceramic, and the sealing portion is formed by pouring a dense filling slurry into the area corresponding to the gap in the wafer of the adsorption portion.

[0032] Optionally, the edge of the adsorption part is provided with a matching groove corresponding to the notch of the wafer, and the sealing part is disposed at the matching groove. The adsorption part and the sealing part can be formed into an integral structure by bonding or sintering.

[0033] Optionally, the adsorption part is an adsorption part formed of porous ceramic, and the sealing part is a sealing part formed of dense ceramic.

[0034] Optionally, a dense filling slurry is applied to the surface of the mating groove to form a layered sealing portion.

[0035] Optionally, the cross-sectional area of ​​the layered sealing portion increases from bottom to top along the thickness direction of the loading member.

[0036] Optionally, the sealing part is formed by sintering a porous material without adding a pore-forming agent; or the sealing part is made by sintering a dense adhesive slurry.

[0037] Optionally, the dense filler slurry includes at least one of silicates, silicon dioxide, alumina, and organic adhesives.

[0038] Optionally, the notch on the wafer that overlaps with the loading element is covered by the sealing portion.

[0039] According to a fourth aspect of the present invention, a wafer loading stage includes: a support member having a placement groove on one side surface, the support member having a ventilation channel inside; a loading member, which is the loading member described in the first aspect above, the loading member being disposed in the placement groove of the support member; when the wafer is disposed on the wafer loading stage, the adsorption portion of the loading member can be vacuumed through the ventilation channel to adsorb the wafer.

[0040] According to a fifth aspect of the present invention, a wafer thinning system includes: a turntable; a wafer loading stage, which is the wafer loading stage described in the fourth aspect above, disposed on the upper part of the turntable for carrying the wafer; and a grinding module disposed above the wafer loading stage for grinding the wafer.

[0041] According to the manufacturing method of the loading component and loading table of this application, as well as the loading component, loading table, and thinning system, the following features are provided:

[0042] Beneficial effects:

[0043] 1. Porous material is added to the mold and sintered to form an adsorption section. This adsorption section also has a porous structure, thus possessing air permeability. Therefore, negative pressure can be created by evacuating air through these porous locations, thereby stabilizing the adsorption of the wafer.

[0044] 2. A sealing section, i.e., a non-permeable structure, is formed on the adsorption section at the position corresponding to the notch on the wafer. Therefore, when particles generated during wafer grinding pass through the notch on the wafer, they are blocked by the sealing section, thus preventing them from entering the adsorption section. This ensures the adsorption capacity of the loading component on the wafer and prevents particles from entering the adsorption section and damaging the loading component.

[0045] 3. The sealing part corresponds to the notch of the wafer, which can prevent the loading component from losing its ability to adsorb the wafer due to air leakage at the notch of the wafer when it adsorbs the wafer, thus preventing unstable wafer adsorption. Therefore, by aligning the sealing part with the notch of the wafer, air leakage is prevented when the loading component adsorbs the wafer. Attached Figure Description

[0046] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings.

[0047] Figure 1 A flowchart illustrating the steps of a method for manufacturing a loading component according to the first aspect of the present invention;

[0048] Figure 2 A step-by-step flowchart of one embodiment of step S2 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0049] Figure 3 This is a step-by-step flowchart of another embodiment of step S2 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0050] Figure 4 This is a step-by-step flowchart of another embodiment of step S2 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0051] Figure 5 This is a step-by-step flowchart of one embodiment of step S205 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0052] Figure 6 This is a step-by-step flowchart of another embodiment of step S205 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0053] Figure 7 A step-by-step flowchart of one embodiment of step S1 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0054] Figure 8 This is a step-by-step flowchart of another embodiment of step S2 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0055] Figure 9 This is a step-by-step flowchart of another embodiment of step S2 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0056] Figure 10A step-by-step flowchart of one embodiment of step S207 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0057] Figure 11 This is a step-by-step flowchart of another embodiment of step S1 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0058] Figure 12 This is a step-by-step flowchart of another embodiment of step S2 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0059] Figure 13 This is a step-by-step flowchart of another embodiment of step S2 of the method for manufacturing a loading component according to the first aspect of the present invention;

[0060] Figure 14 This is a flowchart of the steps in the wafer loading stage manufacturing method according to the second aspect of the present invention;

[0061] Figure 15 This is a step-by-step flowchart of one embodiment of step S20 of the wafer loading stage manufacturing method according to the second aspect of the present invention.

[0062] Figure 16 This is a step-by-step flowchart of step S22 in the wafer loading stage manufacturing method according to the second aspect of the present invention;

[0063] Figure 17 A step-by-step flowchart of one embodiment of step S222 of the wafer loading stage manufacturing method according to the second aspect of the present invention;

[0064] Figure 18 This is a step-by-step flowchart of another embodiment of step S222 of the wafer loading stage manufacturing method according to the second aspect of the present invention;

[0065] Figure 19 This is a step-by-step flowchart of another embodiment of step S20 of the wafer loading stage manufacturing method according to the second aspect of the present invention.

[0066] Figure 20 This is a schematic diagram of a wafer loading stage, which does not have mating grooves or sealing parts;

[0067] Figure 21 This is a schematic diagram of a wafer loading stage, which has a mating groove and a sealing part;

[0068] Figure 22 This is a schematic diagram of a wafer loading stage with a mating groove and a sealing portion filled in the mating groove;

[0069] Figure 23 This is a top view of an embodiment of a loading member according to a third aspect of the present invention;

[0070] Figure 24 This is a top view of an embodiment of the adsorption portion of the loading member according to a third aspect of the present invention;

[0071] Figure 25 This is a schematic diagram of the structure of a sealing portion of a loading member according to a third aspect of the present invention;

[0072] Figure 26 A top view of yet another embodiment of the loading member according to the third aspect of the present invention;

[0073] Figure 27 This is a side sectional view of another embodiment of the sealing portion of the loading member according to the third aspect of the present invention;

[0074] Figure 28 This is a side sectional view of another embodiment of the sealing portion of the loading member according to the third aspect of the present invention;

[0075] Figure 29 This is a top view of yet another embodiment of the sealing portion of the loading member according to the third aspect of the present invention;

[0076] Figure 30 This is a side sectional view of another embodiment of the sealing portion of the loading member according to the third aspect of the present invention;

[0077] Figure 31 This is a top view of an embodiment of a wafer loading stage according to a fourth aspect of the present invention, wherein no sealing portion is formed on the loading component;

[0078] Figure 32 This is a side cross-sectional view of the wafer loading stage according to the fourth aspect of this application, where no sealing portion is formed on the loading component;

[0079] Figure 33 This is a top view of another embodiment of the wafer loading stage according to the fourth aspect of the present invention, wherein the loading member has a mating groove;

[0080] Figure 34 This is a side sectional view of a wafer loading stage according to the fourth aspect of the present invention, wherein the loading component has a mating groove;

[0081] Figure 35 A top view of a wafer loading stage according to the fourth aspect of the present invention, in which a wafer is adsorbed when a sealing portion is not provided;

[0082] Figure 36 A top view of a wafer loading stage according to a fourth aspect of the present invention, wherein a sealing portion is provided in the loading member;

[0083] Figure 37 A side sectional view of the wafer loading stage according to the fourth aspect of the present invention, wherein a sealing portion is provided at the mating groove of the loading member;

[0084] Figure 38 A top view of a wafer loading stage according to the fourth aspect of the present invention, after a sealing portion is provided in the loading member, which adsorbs a wafer.

[0085] Figure 39 for Figure 38 Enlarged view of section A in the image;

[0086] Figure 40 A top view of the support member of the wafer loading stage according to the fourth aspect of the present invention;

[0087] Figure 41 A side sectional view of the support member of the wafer loading stage according to the fourth aspect of the present invention;

[0088] Figure 42 This is a top view of another embodiment of the wafer loading stage according to the fourth aspect of the present invention, in which the sealing part is directly connected to the support member;

[0089] Figure 43 A top view of yet another embodiment of the wafer loading stage according to the fourth aspect of the present invention;

[0090] Figure 44 A top view of yet another embodiment of the wafer loading stage according to the fourth aspect of the present invention;

[0091] Figure 45 A top view of yet another embodiment of the wafer loading stage according to the fourth aspect of the present invention;

[0092] Figure 46 This is a side cross-sectional view of a wafer loading stage according to a fourth aspect of the present invention;

[0093] Figure 47 This is a simplified side cross-sectional view of a wafer loading stage according to the fourth aspect of the present invention;

[0094] Figure 48 This is a perspective side view of the wafer loading stage of the wafer thinning system according to the fifth aspect of the present invention;

[0095] Figure 49 This is a three-dimensional structural schematic diagram of a wafer thinning system according to the fifth aspect of the present invention;

[0096] Figure 50 This is a side view of the turntable, grinding module, and wafer loading stage of the wafer thinning system according to the fifth aspect of the present invention.

[0097] Explanation of reference numerals in the attached figures:

[0098] Wafer thinning system 1000;

[0099] Rotary table 200; Grinding module 300;

[0100] 100 wafer loading stage;

[0101] Support component 10; Placement slot 11; Ventilation pipe 12;

[0102] Loading component 20; adsorption part 21; mating groove 211; sealing part 22; separation interface 23. Detailed Implementation

[0103] To enable those skilled in the art to better understand the technical solutions in the embodiments of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art should fall within the protection scope of the embodiments of this application.

[0104] As mentioned earlier, the integrated circuit industry is the core of the information technology industry, playing a crucial role in promoting the digital and intelligent transformation and upgrading of the manufacturing industry. Chips are the carriers of integrated circuits, and chip manufacturing involves processes such as integrated circuit design, wafer manufacturing, wafer processing, electrical measurement, dicing, packaging, and testing.

[0105] In the back-end process of integrated circuit manufacturing, in order to reduce the packaging height, reduce the chip package volume, improve the chip's thermal diffusion efficiency, electrical performance, mechanical performance, and reduce the chip's processing workload, the wafer needs to undergo back-side grinding before subsequent packaging to thin the wafer to a predetermined thickness; the chip thickness after back-side grinding can even be less than 5% of the initial thickness.

[0106] The wafer thinning process is carried out on a thinning device, in which the wafer loading stage 100 is one of the key components of the wafer thinning device, which is used to hold the wafer to be ground.

[0107] The wafer loading stage 100 typically includes a porous chuck (ceramic chuck), which is equivalent to the loading element 20 in this application. It holds the wafer to be ground by vacuum adsorption. Therefore, vacuum is an essential condition for the wafer loading stage 100 to adsorb the wafer.

[0108] To facilitate positioning, large-size wafers have notches on their outer perimeter. Therefore, as... Figure 20The diagram shows the structure of a current wafer loading stage 100. When a wafer is placed on this wafer loading stage 100, it is adsorbed by the negative pressure formed between the porous chuck and the wafer. The wafer loading stage 100 does not have a sealing section 22. Typically, because the wafer notch is connected to the external atmosphere, partial air leakage can occur, affecting the vacuum level between the porous chuck and the wafer, thus impacting the reliability of wafer adsorption. Furthermore, grinding debris and other particles generated during wafer grinding can enter the interior of the porous chuck along the notch, causing blockage and affecting the adsorption effect and flatness of the porous chuck. Alternatively, a large amount of particles can accumulate at the notch, increasing the difficulty of wafer cleaning.

[0109] After the wafer loading stage 100 picks up the wafer, it rotates. To easily distinguish the orientation of the rotating wafer, as mentioned earlier, a notch is made on the wafer. The wafer notch is as follows: Figure 38 and Figure 39 As shown in the diagram. However, after the wafer is notched, air leaks through the notch of the wafer when the suction part 21 is adsorbing it. This causes airflow leakage when the suction part 21 (the suction part 21 in this application is the porous suction cup mentioned above) adsorbs the wafer, resulting in unstable vacuum and poor wafer adsorption. In other words, after the wafer is adsorbed by the suction part 21, airflow leaks through the notch of the wafer because the position corresponding to the notch of the suction part 21 is not covered. A non-permeable sealing part 22 is formed on the suction part 21 at the position corresponding to the notch of the wafer to seal the notch and inhibit airflow, thereby enabling the suction part 21 to stably adsorb the wafer. Its structure is as follows. Figure 21 Or such as Figure 22 As shown.

[0110] This invention proposes a method for manufacturing a loading component 20, which is used to stably process and form the loading component 20, enabling the loading component 20 to have such... Figure 23 The shown adsorption portion 21 and sealing portion 22 are designed to cooperate with the adsorption portion 21. The sealing portion 22 corresponds to the notch position of the wafer, ensuring stable wafer adsorption by the loading component 20 and preventing particles or dust generated during grinding from entering the adsorption portion 21 through the wafer notch position. Furthermore, the dimensions of the sealing portion 22 and the adsorption portion 21 are matched. Moreover, the loading component 20 can be formed with the support component 10 using the wafer loading stage manufacturing method proposed in this invention. Figure 36 The wafer loading stage 100 is shown. Therefore, first refer to the attached instruction manual. Figures 1-13 The process shown describes a method for manufacturing a loading component 20.

[0111] A method for manufacturing a loading member 20 according to a first aspect embodiment of the present invention, such as Figure 1As shown, it includes:

[0112] Step S1: Add porous material into the mold to form an adsorption part 21 with a sintered permeable porous structure;

[0113] Specifically, in this step, porous material is added to the mold and sintered to form an adsorption section 21. This adsorption section 21 is also a porous structure, thus possessing air permeability. Therefore, a negative pressure can be created by evacuating air through these porous locations to adsorb the wafer. Furthermore, as... Figure 31 The adsorption section 21 shown can be a complete disk structure, which can be further processed to form various shapes. For example... Figure 31 As shown, after the adsorption portion 21 of the loading member 20 is disposed on the support member 10, a wafer loading stage 100 can be formed. A cross-sectional view of the wafer loading stage 100 is shown below. Figure 32 As shown.

[0114] Step S2: A non-permeable sealing part 22 is manufactured in the region of the adsorption part 221 corresponding to the notch of the wafer, and the sealing part 22 and the adsorption part 21 are formed into an integral structure to prevent particulate matter from entering the adsorption part 21 from the notch of the wafer.

[0115] Specifically, in this step, such as Figure 23 As shown, based on the formed adsorption portion 21, a sealing portion 22, i.e., a non-permeable structure, is formed on the adsorption portion 21 at the position corresponding to the notch on the wafer. The structure of the sealing portion 22 is as follows. Figure 25 As shown. Thus, when particles generated during the wafer grinding process pass through the notch of the wafer, they can be blocked by the sealing part 22, thereby preventing them from entering the adsorption part 21, ensuring the adsorption capacity of the loading member 20 on the wafer, and preventing particles from entering the adsorption part 21 and causing damage to the loading member 20.

[0116] Furthermore, the sealing portion 22 corresponds to the notch position of the wafer, which can prevent the loading member 20 from having a reduced wafer-adsorption capacity due to air leakage at the wafer notch position when adsorbing the wafer, thus preventing unstable wafer adsorption. Therefore, by aligning the sealing portion 22 with the wafer notch, air leakage during wafer adsorption by the loading member 20 is prevented. The sealing portion 22 can be formed in various forms on the adsorption portion 21, which will be described later.

[0117] According to the manufacturing method of the loading component provided in the first aspect of this application, a porous material is added to the mold and sintered to form an adsorption part 21. The adsorption part 21 formed therefrom is also a porous structure, thus having air permeability. Therefore, negative pressure can be formed by evacuating air through this porous location, thereby stabilizing the adsorption of the wafer. A sealing part 22, i.e., a non-air-permeable structure, is formed on the adsorption part 21 at a position corresponding to the notch of the wafer. Thus, when particles generated during the wafer grinding process pass through the notch of the wafer, they can be blocked by the sealing part 22, thereby preventing them from entering the adsorption part 21, ensuring the adsorption capacity of the loading component 20 for the wafer, and preventing particles from entering the adsorption part 21 and causing damage to the loading component 20. Furthermore, since the sealing part 22 corresponds to the notch of the wafer, it can prevent the loading component 20 from having a reduced adsorption capacity for the wafer due to air leakage at the notch of the wafer when adsorbing the wafer, resulting in unstable wafer adsorption. Therefore, by having the sealing part 22 correspond to the notch of the wafer, air leakage when the loading component 20 adsorbs the wafer is prevented.

[0118] In some embodiments of the present invention, such as Figure 2 As shown, step S2 includes:

[0119] Step S201: In the area corresponding to the notch of the wafer in the adsorption part 21, a dense filling slurry is poured to create the sealing part 22.

[0120] Specifically, in this step, the position of the adsorption section 21 corresponding to the notch on the wafer is filled with a dense filling slurry, such as... Figure 27 As shown, a dense filling slurry is introduced into the region corresponding to the notch position of the wafer in the adsorption section 21, thereby forming a non-permeable sealing section 22 in this region, which can prevent particles generated during the wafer grinding process from entering the interior of the adsorption section 21.

[0121] In some embodiments of the present invention, such as Figure 3 As shown, step S2 includes:

[0122] Step S202: Use a porous material in the area corresponding to the sealing part 22 and remove the pore-forming agent to form the sealing part 22.

[0123] Specifically, in this step, the sealing part 22 and the adsorption part 21 can be manufactured in various ways. One method is to use porous materials as raw materials for both the adsorption part 21 and the sealing part 22. A pore-forming agent is added to the raw material corresponding to the adsorption part 21 to make the adsorption part 21 formed after sintering a breathable structure. However, no pore-forming agent is added to the area corresponding to the sealing part 22, resulting in a non-breathable structure after sintering. This ensures good consistency of the formed loading part 20, reduces processing difficulty, and avoids the need for reprocessing the mating groove 211 after sintering the adsorption part 21, which could cause the adsorption part 21 to break.

[0124] It should be noted that the processing method for the mating groove 211 is to perform local processing of the adsorption part 21 by milling.

[0125] In some embodiments of the present invention, such as Figure 4 As shown, step S2 includes:

[0126] Step S204: A mating groove 211 is formed in the area corresponding to the notch of the wafer in the adsorption part 21;

[0127] Specifically, in this step, a mating groove 211 is formed on the adsorption part 21 of the loading member 20 corresponding to the notch position of the wafer. The mating groove 211 corresponds to the notch position of the wafer, so that the particles generated during the wafer grinding process will pass through the mating groove 211.

[0128] In some embodiments of the present invention, such as Figure 33 As shown, the mating groove 211 can be opened after the loading member 20 is installed onto the support member 10. Or as... Figure 24 As shown, the adsorption part 21 of the loading member 20 can be fitted with a mating groove 211 before being placed onto the support member 10. For example... Figure 34 The image shown is a side cross-sectional view of the loading member 20 with the mating groove 211 set on the support member 10.

[0129] Step S205: Manufacture the sealing part 22 and place the sealing part 22 into the mating groove 211 to form the sealing part 22 and the adsorption part 21 into an integral structure.

[0130] Specifically, in this step, by placing the sealing part 22 into the mating groove 211, the sealing part 22 can block the position on the adsorption part 21 that corresponds to the notch on the wafer. Ensuring the dimensional correspondence between the sealing part 22 and the mating groove 211 of the adsorption part 21 reduces the processing difficulty. Compared to machining the placement groove 11 on the support member 10 first, and then machining the sealing part 22 on the support member 10, damage to the support member 10 due to stress concentration during the machining of the sealing part 22 can be avoided.

[0131] In some embodiments of the present invention, such as Figure 5 As shown, step S205 includes:

[0132] Step S2051: Manufacture a block-shaped sealing part 22 that matches the shape of the mating groove 211, and assemble the sealing part 22 into the mating groove 211;

[0133] Specifically, a sealing part 22 can be manufactured that matches the shape of the mating groove 211. The sealing part 22 is a block-shaped integral structure, facilitating processing. It is disposed within the mating groove 211, and an adhesive can be used to connect the sealing part 22 to the wall of the mating groove 211, making the connection between the sealing part 22 and the adsorption part 21 tighter. This prevents the sealing part 22 from detaching from the mating groove 211 during use of the loading component 20.

[0134] In some embodiments of the present invention, such as Figure 6 As shown, step S205 includes:

[0135] Step S2052: Apply a dense filling slurry to the surface of the mating groove 211 to form a layered sealing part 22.

[0136] Specifically, a mating groove 211 is formed at the position corresponding to the notch on the wafer in the adsorption section 21. Simultaneously, a non-permeable slurry can be coated on the wall of the mating groove 211. After the non-permeable slurry cures, it forms a non-permeable surface structure on the wall of the mating groove 211. That is, the interior of the mating groove 211 can be understood as forming a non-permeable shell structure stably connected to the mating groove 211, and this non-permeable shell structure conforms to the wall of the mating groove 211. Therefore, even though this position is a groove-shaped structure, during the wafer grinding process, particles formed and falling into the mating groove 211 will be prevented from entering the adsorption section 21 due to the shell-shaped sealing portion 22 formed on the surface.

[0137] In some embodiments of the present invention, the sealing part 22 may be an adhesive, coating or other reagent applied to each wall of the mating groove 211 by coating.

[0138] In some embodiments of the present invention, such as Figure 7 As shown, step S1 includes:

[0139] Step S101: Add raw materials into the mold to sinter and form an adsorption part 21 with a matching groove 211;

[0140] Specifically, in this step, an adsorption portion 21 is formed by sintering, which corresponds to a mating groove 211 at the notch position of the wafer. This allows for a stable connection between the sealing portion 22 and the adsorption portion 21 by subsequently providing a sealing portion 22 within the mating groove 211.

[0141] At the same time, correspondingly, such as Figure 8 As shown, step S2 includes:

[0142] Step S206: Manufacture the sealing part 22, the structure of the sealing part 22 is as follows Figure 25As shown, the sealing part 22 and the adsorption part 21 are bonded or sintered to form an integral structure. Bonding or sintering the sealing part 22 and the adsorption part 21 into an integral structure ensures a stable connection between the two. The sealing part 22 can also effectively suppress the passage of airflow or particulate matter, ensuring the permeability of the adsorption part 21 of the loading component 20 and the non-permeability of the sealing part 20, thus effectively adsorbing the wafer.

[0143] In some embodiments of the present invention, the sealing part 22 may be made of dense ceramic, and its shape may be a block-shaped integral structure that matches the shape of the mating groove 211, or a hollow shell structure that matches the wall shape of the groove of the mating groove 211.

[0144] In some embodiments of the present invention, the adsorption part 21 can be sintered with the sealing part 22 as a whole, making the overall structure more stable.

[0145] In some embodiments of the present invention, the sealing part 22 can be bonded to the adsorption part 21, thereby making it easy and quick to form an integrated structure and facilitating later replacement.

[0146] In some embodiments of the present invention, the sealing part 22 can be first bonded to the adsorption part 21 for easy assembly and positioning, and then the two are sintered into an integral structure, making the overall structure more stable.

[0147] In some embodiments of the present invention, the adsorption portion 21 and the sealing portion 22 of the loading member 20 are directly sintered in the mold, avoiding the need to later create openings at the edge of the adsorption portion 21 for assembly with the sealing portion 22. This prevents the loading member 20 from cracking during the later grooving process at the edge of the adsorption portion 21. This reduces processing difficulty and improves processing accuracy. It also improves the dimensional consistency of both components.

[0148] This method can form an adsorption section 21 capable of adsorbing wafers, while avoiding the step of forming a mating groove 211 after sintering the adsorption section 21. This prevents the adsorption section 21 from being damaged and scrapped during the processing of the mating groove 211, thus avoiding material waste and reduced yield. Furthermore, processing the mating groove separately for the adsorption section 21 is difficult, but the method of this application effectively reduces the processing difficulty. By adding raw materials to the mold, a sealing section 22 can be sintered to form, ensuring dimensional consistency between the mating groove 211 and the sealing section 22. By processing the sealing section 22 and the adsorption section 21 as a single unit, a complete loading component can be formed. The integral molding is convenient and quick, eliminating the need to process the mating groove 211 after the adsorption section 21 is sintered, thus improving the overall yield of the loading component 20, reducing scrap rate, and minimizing material consumption.

[0149] In some embodiments of the present invention, such as Figure 9 As shown, step S2 includes:

[0150] Step S207: Along the region of the adsorption part 21 corresponding to the notch of the wafer, on the contour of the horizontal plane where the adsorption part 21 and the wafer are attached, a sealing part 22 extending along the thickness direction of the adsorption part 21 is provided. The sealing part 22 forms a separation interface 23 extending along the thickness direction of the adsorption part 21 to prevent particulate matter from entering the side of the sealing part 22 opposite to the notch of the wafer from the side of the sealing part facing the notch of the wafer.

[0151] Specifically, in this step, the adsorption portion 21 is bonded to the wafer to adsorb the wafer. The wafer has a notch. At the position on the adsorption portion 21 corresponding to the notch on the wafer, a dense filler paste can be filled along the thickness direction of the adsorption portion 21, and the dense filler paste penetrates into the interior of the adsorption portion 21 from top to bottom along the thickness direction of the adsorption portion 21. Furthermore, the dense filler paste can simultaneously fill downwards along the edge contour of the area on the surface of the adsorption portion 21 corresponding to the notch position on the wafer. The surface of the adsorption portion 21 that is bonded to the wafer is the horizontal surface of the adsorption portion 21. Therefore, filling with dense filler paste can form a separation interface 23 inside the adsorption portion, and the separation interface 23 corresponds to the notch on the wafer.

[0152] In other words, at the position where the adsorption portion 21 of the loading member 20 corresponds to the notch outline of the wafer, a separation interface 23 is formed along the thickness direction of the adsorption portion 21. The separation interface 23 divides the adsorption portion 21 into two regions. The region where the adsorption portion 21 corresponds to the wafer is used as the adsorption portion 21 to adsorb the wafer. The region where the adsorption portion 21 corresponds to the notch position of the wafer will receive contaminants. However, due to the separation effect of the separation interface 23, the contaminants cannot pass through the separation interface 23 to flow to other regions of the adsorption portion 21.

[0153] Meanwhile, on the horizontal plane, that is, on the plane where the surface of the loading member 20 is located, after the loading member 20 adsorbs the wafer, the outline of the separation interface 23 on this plane is larger than the outline range of the wafer notch on the adsorption part 21.

[0154] Therefore, when the wafer grinding process is carried out, the particles generated enter the adsorption section 21 through the wafer notch and then enter the isolation area formed by the separation interface 23, thereby being suppressed from entering other areas of the adsorption section 21.

[0155] Furthermore, in some embodiments of the present invention, such as Figure 10 As shown, step S206 may further include:

[0156] Step S2071: Along the region of the adsorption part 21 corresponding to the notch of the wafer, on the contour of the horizontal plane where the adsorption part 21 and the wafer are attached, a dense filling slurry is injected along the thickness direction of the adsorption part by pressure injection to form the sealing part 22.

[0157] Specifically, in this step, to form a sealing portion 22 at the location corresponding to the wafer notch in the adsorption portion 21, a dense filling slurry can be injected from top to bottom into the adsorption portion 21 under pressure, thereby forming a sealing portion 22 corresponding to the wafer notch inside the adsorption portion 21. Furthermore, the dense filling slurry serving as the sealing portion 22 can also be formed by directly inserting or embedding it into the area on the adsorption portion 21 corresponding to the wafer notch. Simultaneously, on the horizontal plane, i.e., the plane where the surface of the loading member 20 is located, after the loading member 20 adsorbs the wafer, the projection of the sealing portion 22 onto this plane covers the area of ​​the wafer notch. That is, the sealing portion 22 is larger than the outline of the wafer notch.

[0158] The depth of the injected dense filler slurry, i.e., the penetration depth, can exceed the wear amount of the loading component 20 during its service life, for example, it can exceed 10%. For example, if the wear of the loading component 20 during use is 0.5 mm, then the depth of the dense filler slurry needs to be greater than 0.5 mm. This ensures that even after wear occurs during the use of the loading component 20, the sealing part 22 can still ensure that the loading component 20 can stably adsorb the wafer, and can prevent particles generated during wafer grinding from entering the adsorption part 21.

[0159] In some embodiments of the present invention, the injected dense filling slurry can be an adhesive, such as a sealant or putty, an organic adhesive or resin (such as epoxy resin, polyurethane, etc.) to fill the voids and seal the pores after curing.

[0160] In some embodiments of the present invention, the injected dense filling slurry may also be a ceramic slurry or other slurry compatible with the chemical properties of porous ceramics. Ceramic raw material powder (particle size smaller than the pore size of the porous ceramic in the loading component 20) is mixed with a solvent (water or organic solvent) to form a ceramic slurry. The ceramic slurry is then injected into the porous ceramic in the loading component 20 through impregnation, pressure injection, or brushing, and cured under pressure and / or heat (at high temperatures of several hundred degrees Celsius).

[0161] In some embodiments of the present invention, short-cut fibers or fiber webs can be used to fill the pores of the injected dense filling slurry, such as ceramic fibers, glass fibers or carbon fibers.

[0162] In some embodiments of the present invention, the depth of the sealing portion 22 along the thickness direction of the adsorption portion 21 is not less than the amount of wear in the thickness direction of the loading member 20 during use.

[0163] Specifically, after the loading component 20 adsorbs the wafer, the wafer may undergo grinding, thus the loading component 20 may wear down, causing its thickness to gradually decrease. Therefore, to ensure that the loading component 20 can maintain a stable adsorption capacity when adsorbing the wafer and to prevent particulate matter from entering the adsorption section 21, the thickness of the sealing section 22 needs to be no less than the wear amount of the loading component 20. For example, if the wear of the loading component 20 exceeds 2 mm, it can be defined as needing replacement. Therefore, the thickness of the sealing section 22 should be no less than 2 mm.

[0164] Furthermore, for the structure in which the sealing part 22 is disposed within the mating groove 211, the depth of the mating groove 211 can exceed the wear amount of the loading member 20. For example, it can exceed 10%. Alternatively, the thickness of the mating groove 211 can be the same as the thickness of the loading member 20.

[0165] In some embodiments of the present invention, such as Figure 11 As shown, step S1, which involves adding porous material into the mold to sinter and form an adsorption section 21 with a breathable porous structure, includes:

[0166] Step S102: Add raw materials to the mold and sinter to form an adsorption part 21 with a mating groove 211 on the edge, and apply a dense filling slurry to the mating groove 211 to form a separation interface 23.

[0167] Specifically, in this step, by providing a separating interface 23 at the mating groove 211, the adsorption part 21 and the sealing part 22 can be separated. When applying adhesive to the sealing part 22 to form an airtight structure, the separating interface can prevent adhesive from entering the adsorption part 21.

[0168] In some embodiments of the present invention, the separating interface 23 can be formed of at least one of silicate, silicon oxide, aluminum oxide, or organic adhesive. This allows the formed separating interface 23 to be low-cost and readily available.

[0169] In some embodiments of the present invention, such as Figure 12 As shown, step S2 involves creating a non-permeable sealing portion 22 in the region of the adsorption portion 21 corresponding to the wafer notch, and forming the sealing portion 22 and the adsorption portion 21 into an integral structure to prevent particulate matter from entering the adsorption portion 21 from the wafer notch. This includes:

[0170] Step S208: Use porous material to manufacture the sealing part 22, and sinter the sealing part 22 and the adsorption part 21 into an integral structure;

[0171] Step S209: Apply sealant to the sealing part 22 to make the sealing part 22 a non-air-permeable structure.

[0172] Specifically, the sealing portion 22 is sintered from a porous material, forming a porous sealing portion 22. Alternatively, both the sealing portion 22 and the adsorption portion 21 can be sintered from porous materials simultaneously. This facilitates the manufacturing and processing of both the adsorption portion 21 and the sealing portion 22, increasing their consistency. Subsequent application of sealant to the sealing portion 22 creates an airtight structure. This ensures stable wafer adsorption by the loading component 20 and prevents particles generated during wafer grinding from entering the loading component 20 through the sealing portion 22.

[0173] In some embodiments of the present invention, such as Figure 13 As shown, step S2, which involves creating a non-permeable sealing portion 22 in the region of the adsorption portion 21 corresponding to the notch in the wafer, includes:

[0174] Step S210: Use dense ceramic to manufacture the sealing part 22, and bond the sealing part 22 and the adsorption part 21 into an integral structure.

[0175] Specifically, by sintering the sealing portion 22 using a dense ceramic material, the airtight structure of the sealing portion 22 can be guaranteed. By bonding the sealing portion 22 and the adsorption portion 21 into an integral structure, the airflow or particulate matter can be effectively suppressed through the sealing portion 22, ensuring the air permeability of the adsorption portion 21 of the loading component 20 and the airtightness of the sealing portion 20, thus enabling effective adsorption of the wafer.

[0176] The following is in conjunction with the instruction manual appendix. Figures 14-19 A method for manufacturing the wafer loading stage 100 according to the second aspect of the present invention will be described. The method for manufacturing the wafer loading stage 100 according to the second aspect of the present invention is as follows: Figure 14 As shown, the wafer loading stage 100 manufacturing method is used to manufacture the wafer loading stage 100, including:

[0177] Step S10: Manufacture the support member 10 and open the placement groove 11 in the middle of the support member 10;

[0178] Step S20: Manufacture a loading member 20 that is incorporated into the placement slot 11 so that the loading member 20 and the support member 10 form a wafer loading stage 100;

[0179] Step S30: The loading member 20 and the support member 10 form a wafer loading stage 100.

[0180] Specifically, a placement groove 11 is formed in the middle of the support member 10. A loading member 20 is manufactured that can be placed into the placement groove 11, so that the loading member 20 and the support member 10 form a wafer loading stage 100. This avoids the need to process the groove 11 again after processing the support member 10. Furthermore, after the placement groove 11 is processed, the loading member 20 can be directly placed into the placement groove 11. Compared to processing the sealing part 22 on the support member 10 after processing the placement groove 11, this avoids stress concentration caused by processing the sealing part 22, which could lead to breakage of the support member 10.

[0181] According to the wafer loading stage 100 manufacturing method of the second aspect of the present invention, a porous material is added to a mold and sintered to form an adsorption section 21. The adsorption section 21 formed therefrom is also a porous structure, thus having air permeability. Therefore, negative pressure can be formed by evacuating air through this porous location, thereby stabilizing the adsorption of the wafer. A sealing section 22, i.e., a non-air permeable structure, is formed on the adsorption section 21 at a position corresponding to the notch of the wafer. Thus, when particles generated during the wafer grinding process pass through the notch of the wafer, they can be blocked by the sealing section 22, thereby preventing them from entering the adsorption section 21, ensuring the adsorption capacity of the loading member 20 for the wafer, and preventing particles from entering the adsorption section 21 and causing damage to the loading member 20. Furthermore, since the sealing section 22 corresponds to the notch of the wafer, it can prevent the loading member 20 from having a reduced adsorption capacity for the wafer due to air leakage at the notch of the wafer when adsorbing the wafer, resulting in unstable wafer adsorption. Therefore, by having the sealing section 22 correspond to the notch of the wafer, air leakage when the loading member 20 adsorbs the wafer is prevented.

[0182] In some embodiments of the present invention, such as Figure 15 As shown, step S20 includes:

[0183] Step S21: Manufacture an adsorption part 21 of the loading member 20 that matches the shape of the placement groove 11, and place the adsorption part 21 into the placement groove 11 so as to bond it to the support member 10 as a whole.

[0184] Specifically, in this step, an adsorption part 21 that matches the shape of the placement groove 11 is manufactured, and the adsorption part 21 is bonded to the support member 10 as a whole, so that the support member 10 and the adsorption part 21 can be stably connected.

[0185] Step S22: A non-permeable sealing part 22 is manufactured in the region of the adsorption part 21 corresponding to the notch of the wafer, and the sealing part 22 and the adsorption part 21 are formed into an integral structure.

[0186] Specifically, after the adsorption part 21 is placed inside the placement groove 11, by forming a sealing part 22 on the adsorption part 21, it is easy to combine the sealing part 22 and the adsorption part 21 into an integral structure, and the dimensions between the sealing part 22 and the adsorption part 21 are consistent.

[0187] In some embodiments of the present invention, such as Figure 16 As shown, step S22 includes:

[0188] Step S221: A mating groove 211 is formed in the area corresponding to the notch of the wafer in the adsorption part 21;

[0189] Specifically, in this step, a mating groove 211 is formed in the area corresponding to the notch of the wafer and the adsorption part 21. This facilitates the processing of the mating groove 211 of the adsorption part 21. The mating groove 211 can be designed during the mold forming stage of the adsorption part 21, so that the adsorption part 21 with the mating groove 211 can be integrally formed. Compared with the method of forming the mating groove 211 by processing the adsorption part 21 later, the processing efficiency can be improved and the processing difficulty can be reduced.

[0190] Step S222: Manufacture the sealing part 22 and place the sealing part 22 into the mating groove 211 to form the sealing part 22 and the adsorption part 21 into an integral structure.

[0191] Specifically, in this step, manufacturing the sealing portion 22 within the mating groove 211 facilitates improved machining precision of the sealing portion 22, ensuring dimensional consistency between the mating groove 211 and the sealing portion 22. Thus, after the sealing portion 22 is machined and positioned within the mating groove 211, it achieves dimensional consistency with the groove, thereby realizing the sealing effect and ensuring consistent airflow as mentioned earlier. Furthermore, it prevents particles from the wafer grinding process from entering the adsorption portion 21 through the wafer notch. Simultaneously, machining the sealing portion 22 separately, compared to machining it on the support member 10, avoids stress concentration at certain locations caused by machining the sealing portion 22, which could lead to breakage of the support member 10.

[0192] In some embodiments of the present invention, such as Figure 17 As shown, step S222 includes:

[0193] Step S2221: Manufacture a block-shaped sealing part 22 that matches the shape of the mating groove 211, and assemble the sealing part 22 into the mating groove 211.

[0194] Specifically, in this step, a block-shaped sealing part 22 is manufactured, thereby enabling the sealing part 22 to be directly placed into the mating groove 211, thereby forming an air-impermeable structure in the area corresponding to the notch of the wafer, suppressing airflow, and preventing particulate matter from entering the adsorption part 21 from this location.

[0195] In some embodiments of the present invention, such as Figure 18 As shown, step S222 includes:

[0196] Step S2222: Apply a dense filling slurry to the surface of the mating groove 211 to form a layered sealing part 22.

[0197] Specifically, in this step, a mating groove 211 is formed at the position corresponding to the notch on the wafer in the adsorption section 21. Simultaneously, a non-permeable slurry, i.e., a dense filling slurry, can be coated on the wall surface of the mating groove 211. This creates a non-permeable surface structure on the wall surface of the mating groove 211. In other words, the interior of the mating groove 211 can be understood as forming a non-permeable shell structure stably connected to the mating groove 211, and this non-permeable shell structure conforms to the wall surface of the mating groove 211. Therefore, even though this position is a groove-shaped structure, during the wafer grinding process, particles that fall into the mating groove 211 will be prevented from entering the adsorption section 21 due to the shell-shaped sealing portion 22 formed on the surface.

[0198] In some embodiments of the present invention, such as Figure 19 As shown, step S20 includes:

[0199] Step S23: Manufacture the adsorption part 21 and the sealing part 22 of the loading part 20, and form the sealing part 22 and the adsorption part 21 into an integral structure;

[0200] Specifically, in this step, a loading member 20 having an adsorption part 21 and a sealing part 22 can be formed simultaneously in the mold, thereby ensuring the dimensional consistency between the adsorption part 21 and the sealing part 22, and making the structural connection between the adsorption part 21 and the sealing part 22 more stable.

[0201] Step S24: Place both the adsorption part 21 and the sealing part 22 into the placement groove 11.

[0202] Specifically, in this step, after the adsorption part 21 and the sealing part 22 are integrated into a single structure, they are directly placed in the placement groove 11, thereby enabling the loading member 20 to be stably connected to the support member 10. At the same time, the sealing part 22 is integrally formed with the adsorption part 21. Compared with the method of machining the sealing part 22 on the support member 10, it can avoid the stress concentration in some positions caused by machining the sealing part 22, which could lead to the breakage of the support member 10.

[0203] In some embodiments of the present invention, the sealing portion 22 is formed by pouring a dense filling slurry into the area corresponding to the notch of the wafer in the adsorption portion 21.

[0204] Specifically, at the position corresponding to the notch of the wafer in the adsorption section 21, a dense filling slurry is poured in, so that the dense filling slurry enters the area corresponding to the position of the adsorption section 21 in the wafer notch, thereby forming a non-permeable sealing section 22 in the area, thereby preventing particles generated during the wafer grinding process from entering the interior of the adsorption section 21.

[0205] In some embodiments of the present invention, the sealing portion 22 is formed by using a porous material in the area corresponding to the sealing portion 22 and removing the pore-forming agent.

[0206] Specifically, both the adsorption section 21 and the sealing section 22 can be made from porous materials. A pore-forming agent is added to the raw material corresponding to the adsorption section 21 to make the sintered adsorption section 21 a permeable structure. However, no pore-forming agent is added to the area corresponding to the sealing section 22, resulting in a non-permeable structure after sintering. This ensures good consistency of the formed loading component 20, reduces processing difficulty, and avoids the need for reprocessing the mating groove 211 after sintering the adsorption section 21, which could lead to the adsorption section 21 breaking.

[0207] In some embodiments of the present invention, the sealing part 22 is formed by applying a dense filling slurry to the surface of the mating groove 211 to form a layered sealing part 22.

[0208] Specifically, the adsorption portion 21 is bonded to the wafer to adsorb the wafer, which has a notch. At the position corresponding to the notch on the wafer, along the thickness direction of the adsorption portion 21, a dense filler paste can be filled, allowing the paste to penetrate from top to bottom into the interior of the adsorption portion 21. Furthermore, the dense filler paste can simultaneously fill downwards along the edge contour of the area on the surface of the adsorption portion 21 corresponding to the notch on the wafer. The surface of the adsorption portion 21 bonded to the wafer is the horizontal surface of the adsorption portion 21. Therefore, filling with the dense filler paste can form a separation interface 23 inside the adsorption portion, and this separation interface 23 corresponds to the notch on the wafer.

[0209] Therefore, when the wafer grinding process is carried out, the particles generated enter the adsorption section 21 through the wafer notch and then enter the isolation area formed by the separation interface 23, thereby being suppressed from entering other areas of the adsorption section 21.

[0210] In some embodiments of the present invention, when the wafer loading stage 100 adsorbs the wafer, the sealing part 22 prevents particulate matter from entering the adsorption part 21 from the position where the wafer notch coincides with the loading member 20.

[0211] Specifically, the sealing part 22 can prevent particles generated during the wafer grinding process from entering the adsorption part 21.

[0212] In some embodiments of the present invention, the support member 10 has an internal ventilation pipe 12, which is connected to the loading member 20.

[0213] Specifically, the synchronous pipe 12 inside the support member 10 is connected to the adsorption section 21 of the loading member 20, so that the vacuum can be drawn through the adsorption section 21, thereby adsorbing the wafer.

[0214] The following is in conjunction with the instruction manual appendix. Figures 23-30 The accompanying drawings, including the wafer loading stage 100 of the fourth aspect of this application, partially describe the loading element 20 of the third aspect of this application. (See attached figures.) Figure 31 As shown, a loading member 20 according to an embodiment of the present invention is manufactured by the manufacturing method of the loading member 20 described in the first aspect embodiment. Figure 23 and Figures 26-30 As shown, the loading component 20 includes an adsorption part 21 with a breathable structure and a sealing part 22 with a non-breathable structure, which can be formed into an integral structure. The adsorption part can adsorb the wafer.

[0215] It should be noted here that the adsorption part 21 and the sealing part 22 forming an integrated structure in this article means that the two can be processed into a whole structure through processing technology. Specifically, they can be directly integrated by mold processing, or the two independent structures can be processed into a whole by bonding or sintering.

[0216] The adsorption section 21 can adsorb the wafer, and the sealing section 22 is configured to correspond to the notch position of the wafer when the wafer is placed on the loading member 20, so as to prevent the airflow from connecting with the outside through the notch of the wafer, and at the same time, to prevent particulate matter from entering the adsorption section 21 through the notch of the wafer.

[0217] According to an embodiment of the present invention, the loading component 20 incorporates porous material into a mold and sintersects it to form an adsorption section 21. The resulting adsorption section 21 also has a porous structure, thus possessing air permeability. Therefore, negative pressure can be created by evacuating air through these porous locations, thereby stabilizing the adsorption of the wafer. A sealing section 22, i.e., a non-air-permeable structure, is formed on the adsorption section at a position corresponding to the notch on the wafer. Thus, particles generated during wafer grinding are blocked by the sealing section 22 when passing through the notch on the wafer, preventing them from entering the adsorption section 21. This ensures the adsorption capacity of the loading component 20 for the wafer and prevents damage to the loading component 20 caused by particles entering the adsorption section 21. The sealing section's correspondence to the notch on the wafer prevents air leakage at the notch from reducing the loading component 20's wafer adsorption capacity and causing unstable wafer adsorption. Therefore, by positioning the sealing section 22 at the notch on the wafer, air leakage during wafer adsorption by the loading component 20 is prevented.

[0218] In some embodiments of the present invention, such as Figure 31 As shown, the surface of the loading component 20 is unprocessed and is a complete circular plane. Figure 24 and Figure 28 As shown, the edge of the adsorption section 21 has a mating groove 211 corresponding to the notch in the wafer. For example... Figure 35 , Figure 38 and Figure 39The diagram shown illustrates how a wafer loading stage 100 with the loading element 20 holds a wafer W. Figures 36-39 As shown, the sealing part 22 is disposed at the mating groove 211. The adsorption part 21 and the sealing part 22 can be formed into an integral structure by bonding and / or sintering.

[0219] In some embodiments of the present invention, such as Figure 33 As shown, the mating groove 211 can be opened after the loading member 20 is installed onto the support member 10. Or as... Figure 24 As shown, the adsorption part 21 of the loading member 20 can be fitted with a mating groove 211 before being placed onto the support member 10. For example... Figure 34 The image shown is a side cross-sectional view of the loading member 20 with the mating groove 211 set on the support member 10.

[0220] like Figure 38 As shown, when the wafer is placed on the loading member 20, wherein the wafer is as follows Figure 31 As shown in W in the diagram. Figure 38 and Figure 39 As shown, the sealing part 22 is positioned opposite to the notch of the wafer to prevent airflow from connecting with the outside through the sealing part 22, and at the same time, to prevent particulate matter from entering the adsorption part 21 through the sealing part 22.

[0221] Specifically, such as Figure 23 and Figure 26 As shown, the loading component 20 has an adsorption section 21 and a sealing section 22. The adsorption section 21 is a permeable structure that allows airflow, while the sealing section 22 is a non-permeable structure. That is, the adsorption section 21 can be evacuated through the ventilation pipe 12 to adsorb the wafer.

[0222] In some embodiments of the present invention, the adsorption part 21 and the sealing part 22 are formed into an integral structure by bonding or sintering. That is, the sintering raw materials for both are added to the mold and directly sintered. Alternatively, the raw materials for both can be added to the mold simultaneously, sintered into two structures, and then connected into an integral structure by bonding later. In addition, the sealing part 22 and the adsorption part 21 can be formed by sintering, the two structures can be bonded, and then sintered into an integral structure, thereby ensuring the stability of the formed loading part 20. After sintering, the adsorption part 21 of the loading part 20 can be directly formed with a mating groove 211 at the edge to facilitate correspondence with the notch position of the wafer. This avoids the loading part 20 breaking and wasting material when machining the mating groove 211 at the edge of the loading part 20 after sintering. Furthermore, by sintering the adsorption part 21 and the sealing part 22, raw materials can be directly added to the matching groove 211 of the adsorption part 21 to form the sealing part 22. As a result, the dimensions of the two parts after sintering are well matched, and no adjustment of the dimensions is required, thus improving the consistency of the dimensions of the two parts.

[0223] Specifically, when the sealing part 22 is aligned with the notch position of the wafer, the adsorption part 21 of the loading member 20 coincides with the wafer to suppress airflow and / or particulate matter from communicating with the ventilation pipe 12 via the adsorption part 21. The notch position of the wafer is the notch (groove mark) position mentioned earlier. When the notch position of the wafer corresponds to the sealing part 22, the mating groove 211 position of the adsorption part 21 coincides with the mating groove 211 position of the wafer. The adsorption part 21 communicates with the ventilation pipe 12 of the support member 10. The sealing part 22 blocks the opening at the mating groove 211, thereby creating a negative pressure in the adsorption part 21 when the ventilation pipe 12 is evacuated, reliably adsorbing the wafer.

[0224] Since the adsorption section 21 overlaps with the wafer, dust or particles generated during wafer thinning are blocked by the wafer, preventing them from entering the ventilation pipe 12 through the adsorption section 21. Simultaneously, the sealing section 22 prevents particles from entering the ventilation pipe 12 of the support member 10 through the gap at the mating groove 211. Because the sealing section 22 is a non-permeable structure, it also inhibits airflow through the ventilation pipe 12, thereby creating a negative pressure adsorption effect at the adsorption section 21 to adsorb the wafer.

[0225] According to the loading component 20 provided in this application embodiment, by directly sintering the adsorption portion 21 and the sealing portion 22 of the loading component 20 in a mold, the need to later provide openings at the edge of the adsorption portion 21 for assembly with the sealing portion 22 is avoided. This prevents the loading component 20 from cracking during the later grooving process at the edge of the adsorption portion 21. This reduces processing difficulty and improves processing accuracy. The materials of the adsorption portion 21 and the sealing portion 22 can be selected according to actual needs, allowing for diverse designs and improving the dimensional consistency of both.

[0226] In some embodiments of the present invention, such as Figure 27 As shown, the adsorption part 21 is formed of porous ceramic, and the sealing part 22 is formed by pouring dense filling slurry into the area corresponding to the gap of the wafer in the adsorption part 21.

[0227] Specifically, at the position corresponding to the notch of the wafer in the adsorption section 21, a dense filling slurry is poured in, so that the dense filling slurry enters the area corresponding to the position of the adsorption section 21 in the wafer notch, thereby forming a non-permeable sealing section 22 in the area, thereby preventing particles generated during the wafer grinding process from entering the interior of the adsorption section 21.

[0228] In some embodiments of the present invention, such as Figure 28 As shown, a dense filling slurry is applied to the surface of the mating groove 211 to form a layered sealing part 22.

[0229] Specifically, a mating groove 211 is formed at the position corresponding to the notch on the wafer in the adsorption section 21. Simultaneously, a non-permeable slurry, i.e., a dense filling slurry, can be coated on the wall surface of the mating groove 211. This creates a non-permeable surface structure on the wall surface of the mating groove 211. In other words, the interior of the mating groove 211 can be understood as forming a non-permeable shell structure stably connected to the mating groove 211, and this non-permeable shell structure conforms to the wall surface of the mating groove 211. Therefore, even though this position is a groove-shaped structure, during the wafer grinding process, particles that fall into the mating groove 211 will be prevented from entering the adsorption section 21 due to the shell-shaped sealing portion 22 formed on the surface.

[0230] In some embodiments of the present invention, the thickness of the blocking portion 22 is not greater than the thickness of the adsorption portion 21.

[0231] Specifically, the thickness of the sealing portion 22 can be the same as the thickness of the adsorption portion 21, thereby ensuring that the surface of the overall structure of the loading component 20 is level. The thickness of the sealing portion 22 can also be less than the thickness of the adsorption portion 21. The thickness of the adsorption portion 21 must be at least greater than 5 mm, so that even after the chuck surface is ground into a conical surface, for example, the sealing portion 22 can still cover the adsorption portion 21.

[0232] In some embodiments of the present invention, such as Figure 24 As shown, the adsorption section 21 is an adsorption section 21 formed of porous ceramic, such as Figure 25 As shown, the sealing part 22 is a sealing part 22 formed of dense ceramic.

[0233] Specifically, the adsorption section 21 is formed by porous ceramic, allowing it to connect with the ventilation channel 12 inside the support member 10, and the wafer is adsorbed by negative pressure. The sealing section 22 is formed by dense ceramic, meaning it is a non-permeable structure. Both the material of the sealing section 22 and the support member 10 can be dense ceramic. For example... Figure 42 As shown, this allows the sealing portion 22 to be bonded to the support member 10. Figure 24 As shown, the raw material added to the adsorption section 21 can be sintered to form the adsorption section 21. Figure 43 As shown, the adsorption part 21 and the support member 10 with the sealing part 22 bonded together can be sintered into one piece.

[0234] In some embodiments of the present invention, such as Figure 26 As shown, the sealing part 22 is formed by sintering a porous material without adding a pore-forming agent. Specifically, both the sealing part 22 and the adsorption part 21 are added into a mold using porous material, and then sintered to form the shape shown. Figure 26 The loading component 20 is shown. Among them, such as... Figure 26As shown, a pore-forming agent can be added to the porous material in the region corresponding to the adsorption section 21, while no pore-forming agent is added to the porous material in the region of the sealing section 22. Therefore, the adsorption section 21 formed after sintering is porous, allowing airflow to pass through. However, no pore-forming agent is added to the region of the sealing section 22, and a non-permeable structure is formed after sintering, thereby inhibiting the passage of airflow or particulate matter.

[0235] In some embodiments of the present invention, such as Figure 26 As shown, the sealing part 22 is sintered from a dense adhesive slurry. Specifically, a dense slurry can be used as the raw material for sintering the sealing part 22, thereby enabling the formation of a structure like... Figure 26 The sealing part 22 shown is a non-breathable structure.

[0236] The dense slurry can be made by adding at least one of the following fillers: silicate, silica, alumina, organic adhesive, etc. This material is low in cost, readily available, and has the advantage of post-molding stability.

[0237] Then, the loading component 20 and the support component 10 are sintered together to form a single unit, such as... Figure 45 The wafer loading stage 100 shown is a one-piece molded structure with good dimensional consistency, reducing manufacturing difficulty.

[0238] In some embodiments of the present invention, such as Figure 29 and Figure 45 As shown, both the adsorption part 21 and the sealing part 22 are formed by sintering porous materials. The adsorption part 21 and the sealing part 22 are provided with a filling slurry layer at the mating groove, which is the separation interface 23 mentioned above.

[0239] Specifically, such as Figure 29 As shown, both the adsorption section 21 and the sealing section 22 use porous materials as raw materials added to the mold. As mentioned earlier, the edge of the adsorption section 21 has a mating groove 211. The sealing section 22 is located at the mating groove 211. A separation interface 23 is provided at the connection boundary between the two at the mating groove 211, that is, a dense filling slurry layer is provided at the separation interface 23. The dense filling slurry layer is a non-permeable material, therefore, the airflow passing through the adsorption section 21 cannot pass through the filling slurry layer to enter the sealing section 22. Figure 29 As shown, after sintering, a loading component 20 is formed with a filling slurry layer between the adsorption part 21 and the sealing part 22.

[0240] In some embodiments of the present invention, such as Figure 45As shown, the sintered loading component 20 and the support component 10 are sintered to form a complete wafer loading stage 100 structure. Adhesive can be injected into the sealing portion 22 to seal the tiny gaps in the sealing portion 22, which is sintered from porous material, so that the sealing portion 22 forms a non-permeable structure. Furthermore, due to the effect of the filling slurry layer, the adhesive can be separated, preventing the adhesive from entering the adsorption portion 21.

[0241] In some embodiments of the present invention, such as Figure 30 As shown, after the separation interface 23 is formed, the separation interface 23 can be formed as follows: Figure 30 The partition wall shown does not require adhesive application at the sealing portion 22. Although particles or contaminants from the wafer grinding process can enter the sealing portion 22, they cannot pass through the partition interface 23 and enter the adsorption portion 21 due to the blocking effect of the partition interface 23.

[0242] Furthermore, in some embodiments of the present invention, the filler slurry layer comprises at least one of silicate, silicon oxide, alumina, and organic adhesive. It is low in cost, readily available, and exhibits stable molding after sintering.

[0243] In some embodiments of the present invention, the cross-sectional area of ​​the dense filling slurry layer serving as the sealing portion 22 increases from bottom to top along the thickness direction of the loading member 20. Specifically, the cross-sectional area of ​​the dense filling slurry layer serving as the sealing portion 22 is the width of the cross-section, which can be understood as the thickness of the layered sealing portion 22 serving as the separating interface 23. The thickness of the layered sealing portion 22 gradually increases from bottom to top, which can enhance the sealing performance and ensure the connection between the adsorption portion 21 and the sealing portion 22. During the wafer thinning process, there are relatively more particles accumulating at the upper part of the loading member 20 and relatively fewer particles accumulating at the lower part of the loading member 20. By setting the thickness of the dense filling slurry layer serving as the sealing portion 22 in this way, the sealing performance between the sealing portion 22 and the adsorption portion 21 at the upper part is enhanced, thereby preventing particles from entering the sealing portion 22 through the adsorption portion 21.

[0244] In some embodiments of the present invention, such as Figure 38 and Figure 39 As shown, the notch on the wafer that coincides with the loading component 20 is covered by the sealing part 22.

[0245] Specifically, the overlap between the wafer notch and the loading element 20 is covered by the sealing portion 22. This ensures that the sealing portion 22 can effectively block the wafer notch, thereby stably suppressing airflow and preventing particles generated during wafer grinding from entering the adsorption portion 21 through the wafer notch. In other words, on the horizontal plane, i.e., the plane where the surface of the loading element 20 is located, after the loading element 20 adsorbs the wafer, the projection of the sealing portion 22 on this plane covers the area of ​​the wafer notch. That is, the sealing portion 22 is larger than the outline of the wafer notch.

[0246] The following is in conjunction with the instruction manual appendix. Figures 31-47 The accompanying drawings of the third aspect of this application, and the wafer loading stage 100 of the fourth aspect of this application, are described in part.

[0247] Specifically, such as Figures 31-47 As shown, the wafer loading stage 100 includes a support member 10 and a loading member 20. In an embodiment of the present invention, the wafer loading stage 100 can adsorb wafers. The support member 10, as the main support structure of the wafer loading stage 100, can support the loading member 20, which is a porous structure for adsorbing wafers.

[0248] like Figure 40 and Figure 41 As shown, a placement groove 11 is formed on the upper surface of the support member 10, and the interior of the support member 10 has Figure 46 and Figure 47 The ventilation pipe 12 is shown in the figure. The loading member 20 is disposed in the placement groove 11 of the support member 10. Thus, the loading member 20 can communicate with the ventilation pipe 12 inside the support member 10, thereby serving as an adsorption plane. By drawing air through the ventilation pipe 12 to form a negative pressure, the loading member 20 can adsorb the wafer.

[0249] In other words, the adsorption section 21 of the loading member 20 can cooperate with the ventilation pipe 12 of the support member 10 to form a negative pressure adsorption of the wafer. The sealing section 22 can block the ventilation pipe 12 to prevent dust particles during the wafer thinning process from entering the ventilation pipe 12.

[0250] Furthermore, such as Figure 32 , Figure 34 , Figure 37 , Figure 46 and Figure 47 The image shown is a side cross-sectional view of the wafer loading stage 100. Figure 48The image shows a side view of the wafer loading stage 100. The loading component 20 is positioned above the support component 10. The support component 10 has multiple ventilation channels 12 inside to create a vacuum in the loading component 20 and adsorb the wafer. Cleaning water, such as deionized water (DIW), and compressed gas (CDA), are sprayed towards the loading component 20 through the ventilation channels 12 of the support component 10 to remove residual contaminants from the loading component 20 and its channels, thereby ensuring the reliable operation of the loading component 20.

[0251] According to the fourth aspect embodiment of the present invention, the wafer loading stage 100, having the loading member 20 of the third aspect embodiment described above, has the same beneficial effects as the loading member 20 of the third aspect embodiment. By directly sintering the adsorption portion 21 and the sealing portion 22 of the loading member 20 in a mold, the need to later provide openings at the edge of the adsorption portion 21 for assembly with the sealing portion 22 is avoided. This prevents the loading member 20 from breaking during the later process of slotting at the edge of the adsorption portion 21. It reduces processing difficulty and improves processing accuracy. The materials of the adsorption portion 21 and the sealing portion 22 can be selected according to actual needs, allowing for diverse designs and improving the dimensional consistency of both.

[0252] According to a fifth aspect of the present invention, a wafer thinning system 1000, such as Figure 49 and Figure 50 As shown, it includes a turntable 200, a wafer loading stage 100, and a grinding module 300. Figure 49 and Figure 50 As shown, the wafer loading stage 100 is the wafer loading stage 100 of the first aspect embodiment described above, disposed on the upper part of the turntable 200, for carrying wafers. A drive unit (not shown in the figure) is disposed below the wafer loading stage 100 to drive the loading stage 200 and the wafers adsorbed above it to rotate. Figure 49 As shown, the grinding module 300 is positioned above the wafer loading stage 100 and is used for grinding wafers. A coarse grinding wheel and / or a fine grinding wheel can be configured below the grinding module 300 to remove substrate surface material through grinding.

[0253] The wafer thinning system 1000 according to a fifth aspect embodiment of the present invention, having the loading member 20 of the third aspect embodiment described above, has the same beneficial effects as the loading member 20 of the third aspect embodiment. By directly sintering the adsorption portion 21 and the sealing portion 22 of the loading member 20 in a mold, the need to later provide openings at the edge of the adsorption portion 21 for assembly with the sealing portion 22 is avoided, thereby preventing the loading member 20 from cracking during the later grooving process at the edge of the adsorption portion 21. This reduces processing difficulty and improves processing accuracy. The materials of the adsorption portion 21 and the sealing portion 22 can be selected according to actual needs, allowing for diverse designs and improving the dimensional consistency of both.

[0254] The above embodiments are only used to illustrate the embodiments of this application, and are not intended to limit the embodiments of this application. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the embodiments of this application. Therefore, all equivalent technical solutions also fall within the scope of the embodiments of this application, and the patent protection scope of the embodiments of this application should be defined by the claims.

Claims

1. A method for manufacturing a loading component for wafer grinding and thinning, characterized in that, include: Porous material is added to the mold and sintered to form an adsorption part with a breathable porous structure; In the region of the adsorption part corresponding to the notch of the wafer, a matching groove is formed along the contour of the notch of the wafer on the horizontal plane where the adsorption part and the wafer are attached. A dense filling slurry is injected into the matching groove along the thickness direction of the adsorption part by pressurized injection to form a sealing part that serves as a separating interface extending along the thickness direction of the adsorption part. The sealing part and the adsorption part are formed into an integral structure to prevent particles generated during wafer grinding from entering the adsorption part from the notch of the wafer.

2. The method according to claim 1, characterized in that, The depth of the sealing portion along the thickness direction of the adsorption portion is not less than the amount of wear in the thickness direction of the loading component during use.

3. The method according to claim 2, characterized in that, The thickness of the sealing part gradually increases from bottom to top to enhance the sealing performance of the sealing part and the adsorption part at the top.

4. The method according to claim 1, characterized in that, After being injected into the matching tank, the dense filling slurry undergoes curing and sintering treatments, so that the sealing part and the adsorption part form a dense integral structure.

5. The method according to claim 1, characterized in that, The dense filler slurry includes at least one of silicates, silica, alumina, and organic adhesives.

6. The method according to claim 1, characterized in that, The notch on the wafer that coincides with the loading component is covered by the sealing portion.

7. The method according to claim 1, characterized in that, The sealing part has a dense ceramic structure.

8. The method according to claim 1, characterized in that, The adsorption part is made of porous ceramic, and the coefficient of thermal expansion of the adsorption part matches that of the sealing part.

9. The method according to claim 1, characterized in that, Before opening the mating groove, the method further includes: attaching the adsorption part to the support.

10. A method for manufacturing a wafer loading stage, characterized in that, include: A support component is manufactured, and a placement groove is formed in the middle of the support component; a loading component is manufactured using the manufacturing method of any one of claims 1-9; the loading component is placed in the placement groove, so that the loading component and the support component are integrated to form the wafer loading stage.

11. The method according to claim 10, characterized in that, The support has an internal ventilation pipe that is connected to the loading component.

12. The method according to claim 10, characterized in that, The loading component and the supporting component are formed into an integral structure by bonding or sintering.

13. A method for manufacturing a loading component in a wafer thinning system, the wafer thinning system comprising a turntable, a wafer loading stage disposed on the upper part of the turntable, and a grinding module disposed above the wafer loading stage, characterized in that, The method for manufacturing the loading component includes: adding porous material into a mold to sinter and form an adsorption part with a permeable porous structure; manufacturing a non-permeable sealing part in the region of the adsorption part corresponding to the notch of the wafer, and forming the sealing part and the adsorption part into an integral structure to prevent particles generated during wafer grinding from entering the adsorption part from the notch of the wafer; and placing the loading component into the placement groove of the support to form the wafer loading stage, the wafer loading stage being disposed on the turntable.

14. A loading device for wafer grinding and thinning, characterized in that, include: An adsorption section with a permeable porous structure, the adsorption section being configured to hold the wafer to be ground by vacuum adsorption. A non-permeable sealing portion is provided in the region of the adsorption portion corresponding to the notch of the wafer, and the sealing portion and the adsorption portion are integrally formed; wherein, the sealing portion is configured to prevent particles generated during wafer grinding from entering the adsorption portion from the notch of the wafer.

15. The loading member according to claim 14, characterized in that, The edge of the adsorption part is provided with a matching groove corresponding to the notch of the wafer, and the sealing part is disposed at the matching groove.

16. The loading member according to claim 14, characterized in that, The depth of the sealing portion along the thickness direction of the adsorption portion is not less than the amount of wear in the thickness direction of the loading component during use.

17. The loading member according to claim 14, characterized in that, The sealing part is a dense ceramic structure, and the adsorption part is a porous ceramic.

18. A wafer loading stage, characterized in that, include: A support member has a placement groove on one side surface, and the support member has a ventilation pipe inside. The loading component is the loading component according to any one of claims 14-17, and the loading component is disposed in the placement slot of the support component; when the wafer is disposed on the wafer loading stage, the adsorption part of the loading component can be vacuumed through the ventilation pipe to adsorb the wafer.

19. The wafer loading stage according to claim 18, characterized in that, When the wafer loading stage adsorbs a wafer, the sealing part prevents particulate matter from entering the adsorption part from the position where the wafer notch coincides with the loading part.

20. A wafer thinning system, characterized in that, include: Turntable; A wafer loading stage, wherein the wafer loading stage is the wafer loading stage as described in claim 18 or 19, wherein the wafer loading stage is disposed on the upper part of the turntable for carrying wafers; and a grinding module, disposed above the wafer loading stage for grinding the wafers.

21. The wafer thinning system according to claim 20, characterized in that, The loading component includes an adsorption section with a permeable porous structure and a sealing section with a non-permeable structure. The sealing section is disposed in the region of the adsorption section corresponding to the notch of the wafer to inhibit particulate matter from entering the adsorption section through the notch of the wafer.

22. The wafer thinning system according to claim 20, characterized in that, The depth of the sealing portion along the thickness direction of the adsorption portion is not less than the amount of wear in the thickness direction of the loading component during use.

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