Preparation method of gate oxide layer of silicon carbide MOSFET device, silicon carbide MOSFET device and preparation method of silicon carbide MOSFET device

Abstract

The invention provides a preparation method of a gate oxide layer of a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device, the silicon carbide MOSFET device and a preparation method thereof. The preparation method of the gate oxide layer of the silicon carbide MOSFET device comprises the following steps: providing a silicon carbide substrate; growing a silicon oxide layer on the silicon carbide substrate; and carrying out annealing treatment on the silicon carbide substrate on which the silicon oxide layer is grown in a mixed atmosphere of nitrogen and chlorine. According to the preparation method of the gate oxide layer of the silicon carbide MOSFET device, nitrogen and chlorine are introduced into the mixed atmosphere for annealing treatment, and the SiC / SiO2 interface state density of the silicon carbide MOSFET device can be effectively reduced through combination of the nitrogen and the chlorine, so that the performance of the silicon carbide MOSFET device is improved.

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