A double-layer non-magnetic electric heating device with inner and outer rings in an atomic gas chamber based on MEMS technology

Abstract

The application discloses a double-layer non-magnetic electric heating device for an inner ring and an outer ring of an atomic gas chamber based on a MEMS process, which comprises a boron nitride heat preservation structure, double-layer inner and outer ring heating films and an upper and lower symmetrical platinum resistance multi-point temperature measurement system; when the atomic magnetometer gas chamber based on the spin exchange relaxation effect works, the double-layer inner and outer ring heating films on the boron nitride heat preservation structure and the multi-point temperature measurement system jointly act to realize the uniform non-magnetic heating effect of the atomic gas chamber based on the MEMS process. First, the double-layer inner and outer ring heating film wiring structures are prepared on the glass surface through the MEMS process to realize the uniform non-magnetic electric heating; second, the upper and lower symmetrical platinum resistance multi-point temperature measurement system is processed on the boron nitride heat preservation structure to realize the temperature collection of different positions in the atomic gas chamber based on the MEMS process. The application can realize the non-magnetic uniform heating of the atomic gas chamber based on the MEMS process and is suitable for the heating requirements of other atomic spin quantum sensors.

Description

Technical Field

[0001] This invention belongs to the field of quantum precision measurement, specifically relating to a double-layer non-magnetic electric heating device with inner and outer rings of an atomic gas chamber based on MEMS technology, which meets the heating requirements of the atomic gas chamber and ensures non-magnetic, highly uniform heating. Background Technology

[0002] The SERF atomic magnetometer has enormous potential in future scientific research and practical product development for ultra-high sensitivity magnetic field measurement. The alkali metal chamber is the core component of the atomic magnetometer. It must be sealed, transparent, non-magnetic, and resistant to high temperatures. Its performance directly affects the measurement capability of the atomic magnetometer. However, since alkali metals are solid at room temperature, it is necessary to increase the temperature inside the alkali metal chamber.

[0003] The stability of the gas chamber determines the long-term performance of the magnetometer. The main causes of gas chamber instability include defects leading to non-uniform temperature fields and fatigue failure due to internal component dissipation. Therefore, it is necessary to optimize the gas chamber heating system design to achieve uniform heating while precisely controlling the gas chamber temperature. Thus, a solution that can both precisely control the heating temperature and improve heating uniformity is urgently needed. Summary of the Invention

[0004] The technical problem solved by this invention is to provide a temperature control system for an inner and outer double-layer heating film for an atomic gas chamber, which achieves uniform heating while precisely controlling the temperature, in order to address the shortcomings of the existing system.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows: A double-layer non-magnetic electric heating device for an atomic gas chamber based on MEMS technology is disclosed. The device includes a boron nitride insulation structure, a double-layer inner and outer heating film, and a symmetrical platinum resistance multi-point temperature measurement system. The double-layer inner and outer heating film is disposed on both sides of the boron nitride insulation structure. The double-layer inner and outer heating film includes an insulating layer and upper and lower double-layer coils. The double-layer inner and outer heating film is fabricated on a glass surface using MEMS technology to achieve uniform non-magnetic electric heating. Furthermore, the symmetrical platinum resistance multi-point temperature measurement system is fabricated on the boron nitride insulation structure to achieve temperature acquisition at different locations inside the atomic gas chamber based on MEMS technology.

[0006] The advantages of this invention compared to the prior art are: This invention designs a double-layer inner and outer ring heating film to solve the problem of large temperature gradient and uneven temperature on the light-transmitting hole surface.

[0007] The double-layer inner and outer ring heating film on the boron nitride insulation structure, together with the multi-point temperature measurement system, effectively improves the uniformity of heating temperature on the light-transmitting aperture surface.

[0008] The outer ring pattern of the first rectangle uses a special arrangement, in which the wires are arranged in a rectangular layout so that the current transmission directions of the pairs of opposite wires are opposite, in order to achieve the best demagnetization effect. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a schematic diagram of the upper heating film structure in this invention; Figure 3 This is a schematic diagram of the lower heating film structure in this invention; Figure 4 This is a schematic diagram showing the position of the circular hole for measuring platinum resistance temperature in this invention.

[0010] The attached figures are labeled as follows: Upper coil 1, insulation layer 2, lower coil 3, symmetrical platinum resistance multi-point temperature measurement system 4, boron nitride insulation structure 5, upper first rectangular outer ring pattern 11, upper second circular inner ring pattern 12, upper inner ring insulation layer through hole 13, upper inner ring power pin 14, upper outer ring insulation layer through hole 15, upper outer ring power pin 16, lower first rectangular outer ring pattern 31, lower second circular inner ring pattern 32, lower inner ring insulation layer through hole 33, lower inner ring power pin 34, lower insulation layer outer ring through hole 35, lower outer ring power pin 36, first temperature measuring point 41, second temperature measuring point 42, third temperature measuring point 43, fourth temperature measuring point 44, fifth temperature measuring point 45, sixth temperature measuring point 46. Detailed Implementation

[0011] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of this invention described below can be combined with each other as long as they do not conflict with each other. To achieve the above objectives, this invention adopts the following technical solution.

[0012] A MEMS-based atomic gas chamber double-layer non-magnetic electric heating device includes a boron nitride insulation structure 5, a double-layer inner and outer heating film, and a symmetrical platinum resistance multi-point temperature measurement system 4. When the gas chamber of a SERF (Spin-Exchange Relaxation-Free) atomic magnetometer is in operation, the double-layer inner and outer heating film on the boron nitride insulation structure 5 and the symmetrical platinum resistance multi-point temperature measurement system 4 work together to achieve uniform non-magnetic heating of the atomic gas chamber based on MEMS technology. First, a double-layer inner and outer heating film wiring structure is fabricated on a glass surface using MEMS technology to achieve uniform non-magnetic electric heating. Second, the symmetrical platinum resistance multi-point temperature measurement system 4 is fabricated on the boron nitride insulation structure 5 to achieve temperature acquisition at different locations inside the atomic gas chamber based on MEMS technology. This invention can achieve non-magnetic uniform heating of atomic gas chambers based on MEMS technology, can be used for heating the gas chamber of a SERF atomic magnetometer, and is applicable to the heating needs of other atomic spin quantum sensors.

[0013] The boron nitride insulation structure 5 has six circular holes for placing platinum resistance thermometers. All six circular holes are parallel to the surface of the double-layer inner and outer ring heating film, i.e., the surface of the light-transmitting hole.

[0014] The double-layer inner and outer heating film is used to form a nickel-chromium alloy wire pattern on a glass substrate through magnetron sputtering and stripping processes. The wire pattern includes an upper and lower double-layer meandering coil structure, with the double coils separated by an insulating layer and distributed in a mirror-symmetrical manner. The upper and lower double coils are connected by through-hole wires that traverse the insulating layer.

[0015] The symmetrical platinum resistance multi-point temperature measurement system 4 has multiple circular holes for placing platinum resistances on the boron nitride insulation structure plane 1 cm from the air chamber on the parallel light-transmitting aperture surface. The circular holes for placing platinum resistances on the upper and lower light-transmitting aperture surfaces are symmetrically distributed.

[0016] The symmetrical platinum resistance multi-point temperature measurement system 4 has circular holes symmetrically distributed around the light-transmitting hole on the light-transmitting hole surface of the boron nitride insulation structure 5 as circular holes for placing multi-point temperature measuring platinum resistances. The size of each temperature measuring platinum resistance corresponds to the size of the platinum resistance placement circular hole, and the wires are directly led out from the platinum resistance placement circular hole to the external system. The upper coil 1 and lower coil 3 on one side of the double-layer inner and outer ring heating film both include a first rectangular outer ring pattern and a second circular inner ring pattern. The first rectangular outer ring pattern uses a special arrangement, where the wires are arranged in a rectangular layout so that the current transmission directions of the pairs of opposite wires are opposite to achieve the optimal demagnetization effect. The wires of the second circular inner ring pattern are narrower and distributed in a circular pattern along the edge of the light-transmitting hole, forming an inner and outer double-ring structure in the heating area. The first rectangular outer ring and the second circular inner ring are led out to circular power pins through two long wires, away from the core heating area. like Figure 1As shown, the overall structure of this invention includes: a double-layer inner and outer ring heating film, an insulating layer 2, a symmetrical platinum resistance multi-point temperature measurement system 4, and a boron nitride insulation structure 5; the double-layer inner and outer ring heating film includes an upper coil 1, an insulating layer 2, and a lower coil 3. The upper coil 1 and the lower coil 3 are mirror-symmetrically distributed on the upper and lower sides of the insulating layer. The double-layer inner and outer ring heating film is pasted onto the upper and lower symmetrical planes of the boron nitride insulation structure 5. The symmetrical platinum resistance multi-point temperature measurement system 4 is embedded in the boron nitride insulation structure 5 and is parallel to the placement surface of the double-layer inner and outer ring heating film.

[0017] like Figure 2 As shown, the upper coil 1 in this invention includes: an upper first rectangular outer ring pattern 11, an upper second circular inner ring pattern 12, an upper inner ring insulation layer through hole 13, an upper outer ring insulation layer through hole 15, an upper inner ring power supply pin 14, and an upper outer ring power supply pin 16.

[0018] like Figure 3 As shown, the lower coil 3 in this invention includes: a lower first rectangular outer ring pattern 31, a lower second circular inner ring pattern 32, a lower inner ring insulating layer through hole 33, a lower insulating layer outer ring through hole 35, a lower inner ring power supply pin 34, and a lower outer ring power supply pin 36.

[0019] like Figure 4 As shown, in this invention, the platinum resistance thermometer holes are symmetrically distributed on the oven, including: a first temperature measuring point 41, a second temperature measuring point 42, a third temperature measuring point 43, a fourth temperature measuring point 44, a fifth temperature measuring point 45, and a sixth temperature measuring point 46.

Claims

1. A double-layer non-magnetic electric heating device with inner and outer rings of an atomic gas chamber based on MEMS technology, characterized in that, The device includes a boron nitride insulation structure, a double-layer inner and outer heating film, and a symmetrical platinum resistance multi-point temperature measurement system. The double-layer inner and outer heating film is disposed on the upper and lower sides of the boron nitride insulation structure. The double-layer inner and outer heating film includes an insulating layer and upper and lower double-layer coils. The double-layer inner and outer heating film is fabricated on the glass surface using MEMS technology to achieve uniform non-magnetic electric heating. The symmetrical platinum resistance multi-point temperature measurement system is fabricated on the boron nitride insulation structure to achieve temperature acquisition at different locations inside the atomic gas chamber based on MEMS technology. The double-layer inner and outer ring heating film forms a nickel-chromium alloy wire pattern on a glass substrate through magnetron sputtering and peeling processes. The wire pattern includes an upper and lower double-layer coil structure, with the upper and lower double-layer coils separated by an insulating layer and distributed in a mirror symmetrical manner. The upper and lower double-layer coils are connected by through-hole wires that traverse the insulating layer. The coil pattern on one side of the double-layer inner and outer ring heating film includes a first rectangular outer ring pattern and a second circular inner ring pattern. The first rectangular outer ring pattern is specially arranged to achieve the best demagnetization effect. The wire width of the second circular inner ring pattern is narrowed and distributed in a circular pattern along the edge of the light-transmitting hole, forming an inner and outer double ring structure in the heating area. The first rectangular outer ring and the second circular inner ring are led out to circular power pins through two long wires, away from the core heating area. The special arrangement means that the wires of the first rectangular outer ring are arranged in a rectangular layout so that the current transmission directions of the two opposite wires are opposite.

2. The atomic gas chamber double-layer non-magnetic electric heating device based on MEMS technology according to claim 1, characterized in that, The boron nitride insulation structure is machined with six circular holes for placing platinum resistance thermometers, and all six circular holes are parallel to the placement surfaces of the double-layer inner and outer ring heating films.

3. The atomic gas chamber double-layer non-magnetic electric heating device based on MEMS technology according to claim 1, characterized in that, The symmetrical platinum resistance multi-point temperature measurement system has multiple circular holes for placing platinum resistances on the boron nitride insulation structure plane 1 cm from the air chamber on the parallel light-transmitting aperture surface. The circular holes for placing platinum resistances on the upper and lower light-transmitting aperture surfaces are symmetrically distributed.

4. The double-layer non-magnetic electric heating device with inner and outer rings based on MEMS technology according to claim 1, characterized in that, The symmetrical platinum resistance multi-point temperature measurement system has circular holes symmetrically distributed around the light-transmitting hole in the surface of the boron nitride insulation structure. These holes serve as placement holes for the multi-point temperature measurement platinum resistances. The size of each temperature measurement platinum resistance corresponds to the size of the circular hole where the platinum resistance is placed. The wires are directly led out from the circular hole where the platinum resistance is placed to the external system.

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