Electrode for semiconductor device and method of forming the same

By using a combination method of low-resistance metal element and titanium nitride thin film layer and combined with plasma treatment, the problems of high electrode resistance and uneven film surface of the semiconductor device are solved, the formation of low-resistance and high-quality electrodes is achieved, and the semiconductor is improved performance of the device.

CN119156698APending Publication Date: 2024-12-17JUSUNG ENG
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202380038322.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-09-29
Filing Date
2023-05-09
Publication Date
2024-12-17

AI Technical Summary

Technical Problem

The electrodes of the conventional semiconductor device have high resistance and are prone to damage due to etching gas, resulting in uneven film surfaces, which affects the formation quality of the electrodes and the operation of the semiconductor device.

Method used

Low resistance metal elements such as molybdenum (Mo), ruthenium (Ru) and copper (Cu) are used as electrode materials, and the combination method of spraying low resistance metal film layer and titanium nitride (TiN) film layer is removed in combination with plasma treatment. Impurities, forming low resistance and high quality electrodes.

Benefits of technology

It effectively reduces the resistance of the electrode, reduces the damage to the base film and surface inhomogeneity, and improves the electrical characteristics and operational reliability of the semiconductor device.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119156698A_ABST
    Figure CN119156698A_ABST
Patent Text Reader

Abstract

A method of forming an electrode for a semiconductor device according to an exemplary embodiment includes preparing a substrate, ejecting a precursor including a low-resistance metal element onto the substrate, and forming a low-resistance metal thin film layer by ejecting a gas including hydrogen (H) or oxygen (O) onto the substrate. Accordingly, according to an exemplary embodiment, an electrode in which a ligand impurity derived from a precursor containing a low-resistance metal element is removed can be provided. Accordingly, an electrode having low resistance may be provided.
Need to check novelty before this filing date? Find Prior Art