A hybrid driving integrated device for Micro-LED displays and its fabrication method

Abstract

The present invention discloses a hybrid drive integrated device for Micro-LED display and a preparation method thereof, wherein the hybrid drive integrated device comprises a monolithic integrated structure and an nT1C display drive circuit, wherein the nT1C display drive circuit is connected to the monolithic integrated structure through a bonding metal; the monolithic integrated structure comprises a GaN buffer layer and an AlGaN barrier layer in sequence, wherein a p-GaN cap layer and an n-GaN ohmic contact electrode are arranged at intervals on the surface of the AlGaN barrier layer away from the GaN buffer layer, a tunnel junction is arranged on the surface of the p-GaN cap layer away from the AlGaN barrier layer, an n-GaN electron injection layer and an n-GaN ohmic contact electrode are arranged on the surface of the tunnel junction, and a quantum well layer, a p-GaN hole injection layer and a p-GaN ohmic contact electrode are arranged on the surface of the n-GaN electron injection layer in sequence. The present invention can reduce energy consumption, improve circuit safety, enhance display resolution, and be compatible with existing process lines.

Description

Technical Field

[0001] The present invention relates to an integrated device and a method for manufacturing the same, and specifically to a hybrid drive integrated device for Micro-LED display and a method for manufacturing the same. Background Art

[0002] With the development of display technology, Micro-LED has become the most promising next-generation display technology after LCD and OLED due to its unique advantages such as high brightness, high contrast, small size, low power consumption and long life. In display applications, in order to achieve large-area, high-resolution dynamic display, active drive is often used to control a single display pixel. However, since Micro-LED needs to grow at high temperature on a specific substrate, Micro-LED pixels and display drive circuits are discrete devices, and metal bonding is required to achieve the integration of Micro-LED pixels and drive circuits. Transistors commonly used to prepare display drivers mainly include amorphous silicon transistors, oxide thin film transistors, LTPS, etc. However, due to the limited material mobility, the Micro-LED pixel driver tube in the display circuit often needs to occupy a large area to achieve high-brightness light emission of Micro-LED, which is difficult to tolerate in ultra-high-resolution Micro-LED display applications. Using CMOS circuits as display drivers for Micro-LEDs is one of the methods currently proposed by the industry to reduce the area of ​​driver circuits and thereby improve the resolution of Micro-LED displays. It has become a driving solution for new display applications such as virtual reality and augmented reality. However, CMOS drivers still have the problem of limited display area and cannot be used in transparent display, flexible display and other fields.

[0003] Therefore, a more optimized display driving solution is needed, which can effectively reduce the driving area while being compatible with various display application scenarios and existing product lines. Micro-LED display with high driving performance can be achieved by integrating HEMT and Micro-LED. Patent CN118335766A realizes the integration of HEMT and Micro-LED devices by flip-chip bonding. This method has high requirements for bonding accuracy and yield and is difficult to process. Another method is to achieve homogeneous integration of Micro-LED and HEMT by epitaxial integration (CN116314185 A). This method can only obtain depletion-type HEMT and Micro-LED integrated devices, with high energy consumption and poor circuit safety. Summary of the invention

[0004] Purpose of the invention: In order to overcome the deficiencies in the prior art, the purpose of the present invention is to provide a hybrid drive integrated device for Micro-LED display with high circuit safety and reduced drive tube area. Another purpose of the present invention is to provide a method for preparing a hybrid drive integrated device for Micro-LED display with low cost and compatible with existing process lines.

[0005] Technical solution: The first hybrid drive integrated device for Micro-LED display described in the present invention includes a monolithic integrated structure and an nT1C display drive circuit, wherein the nT1C display drive circuit is connected to the monolithic integrated structure through a bonding metal; the monolithic integrated structure includes a GaN buffer layer and an AlGaN barrier layer in sequence, a p-GaN cap layer and an n-GaN ohmic contact electrode are arranged on the surface of the AlGaN barrier layer away from the GaN buffer layer, a tunnel junction is arranged on the surface of the p-GaN cap layer away from the AlGaN barrier layer, an n-GaN electron injection layer and an n-GaN ohmic contact electrode are arranged on the surface of the tunnel junction, at least one n-GaN ohmic contact electrode extends to the p-GaN cap layer and the side of the tunnel junction and is connected to the AlGaN barrier layer, a quantum well layer, a p-GaN hole injection layer, and a p-GaN ohmic contact electrode are arranged on the surface of the n-GaN electron injection layer in sequence; the tunnel junction includes a p-GaN cap layer and an AlGaN barrier layer in sequence, and a p-GaN hole injection layer and a p-GaN ohmic contact electrode are arranged on the surface of the n-GaN electron injection layer in sequence; + -GaN tunneling layer, InGaN auxiliary tunneling layer, n + -GaN tunneling layer and n-GaN extension layer, p + The -GaN tunneling layer is connected to the p-GaN cap layer. The tunnel junction solves the problem of difficulty in forming p-GaN ohmic contact caused by the etching process, which can reduce energy consumption and improve circuit safety.

[0006] The second hybrid drive integrated device for Micro-LED display described in the present invention includes a monolithic integrated structure and an nT1C display drive circuit, wherein the nT1C display drive circuit is connected to the monolithic integrated structure through a bonding metal; the monolithic integrated structure includes an n-GaN electron injection layer, a quantum well layer and an n-GaN ohmic contact electrode are arranged on the surface of the n-GaN electron injection layer, a p-GaN hole injection layer, a tunnel junction, a GaN buffer layer, and an AlGaN barrier layer are arranged on the surface of the quantum well layer in sequence, an n-GaN ohmic contact electrode and a p-GaN cap layer are arranged on the surface of the AlGaN barrier layer, and at least one n-GaN ohmic contact electrode extends to the side of the AlGaN barrier layer and the GaN buffer layer and is connected to the tunnel junction, and a p-GaN ohmic contact electrode is arranged on the surface of the p-GaN cap layer; the tunnel junction includes p-GaN in sequence. + -GaN tunneling layer, InGaN auxiliary tunneling layer, n + -GaN tunneling layer and n-GaN extension layer, p +The -GaN tunneling layer is connected to the p-GaN cap layer. The tunnel junction solves the problem of difficulty in forming p-GaN ohmic contact caused by the etching process, which can reduce energy consumption and improve circuit safety.

[0007] Furthermore, the quantum well layer is In x Ga 1-x N / GaN multi-quantum well layer, 0 ≤ x ≤ 1, displays red, green or blue light, and can cover the red, green and blue pixels of Micro-LED display.

[0008] Furthermore, the n-GaN ohmic contact electrode is a metal electrode formed of one or more of Ti, Al, Ni, Pt, and Au.

[0009] Furthermore, the nT1C display driving circuit includes a plurality of transistors and capacitor devices on a driving backplane.

[0010] Furthermore, the transistor is one or more of CMOS, LTPS, IGZO, and 2D TFT, and the type and quantity of the transistor are designed according to different display requirements.

[0011] The first method for preparing a hybrid drive integrated device for Micro-LED display according to the present invention comprises the following steps:

[0012] Step 1: epitaxially growing a GaN buffer layer, an AlGaN barrier layer, a p-GaN cap layer, a tunnel junction, an n-GaN electron injection layer, a quantum well layer, and a p-GaN hole injection layer on a substrate in sequence;

[0013] Step 2: Define the light-emitting area of ​​the Micro-LED by ICP method, etch the non-light-emitting area to the n-GaN electron injection layer, then define the HEMT gate area, etch the other areas except the Micro-LED and HEMT gate areas to the AlGaN barrier layer, evaporate the n-GaN ohmic contact electrode, and evaporate the p-GaN ohmic contact electrode on the surface of the p-GaN hole injection layer;

[0014] Step 3, defining the area of ​​the monolithic integrated structure, and etching the portion outside the monolithic integrated structure to the substrate by ICP method to obtain a separated device;

[0015] Step 4, preparing nT1C display driving circuit;

[0016] Step 5: Bond the separated device to the nT1C display drive circuit through bonding metal by mass transfer method, and remove the substrate to obtain a hybrid drive integrated device.

[0017] The second method for preparing a hybrid drive integrated device for Micro-LED display according to the present invention comprises the following steps:

[0018] Step 1: epitaxially growing an n-GaN electron injection layer, a quantum well layer, a p-GaN hole injection layer, a tunnel junction, a GaN buffer layer, an AlGaN barrier layer, and a p-GaN cap layer on a substrate in sequence;

[0019] Step 2: Define the HEMT gate region by inductively coupled plasma etching (ICP), etch other regions to the AlGaN barrier layer, define the light-emitting region of the Micro-LED, etch other regions except the light-emitting region of the Micro-LED to the n-GaN electron injection layer, evaporate the n-GaN ohmic contact electrode, and evaporate the p-GaN ohmic contact electrode on the surface of the p-GaN cap layer;

[0020] Step 3, defining the area of ​​the monolithic integrated structure, and etching the portion outside the monolithic integrated structure to the substrate by ICP method to obtain a separated device;

[0021] Step 4, preparing nT1C display driving circuit;

[0022] Step 5: Bond the separated device to the nT1C display drive circuit through bonding metal by mass transfer method, and remove the substrate to obtain a hybrid drive integrated device.

[0023] Furthermore, the substrate is any one of sapphire, silicon, silicon carbide, quartz, and glass.

[0024] Furthermore, the annealing temperature is 750-850° C., and an ohmic contact is formed after annealing.

[0025] Preparation principle: Two types of vertically stacked epitaxial growth structures of Micro-LED / enhanced HEMT are proposed. The first type of Micro-LED / enhanced HEMT monolithic integrated structure is to sequentially epitaxially grow enhanced HEMT, tunnel junction and Micro-LED structure on a nitride epitaxial substrate. The tunnel junction is the contact layer of p-GaN in the enhanced HEMT structure, which can effectively regulate the carriers in p-GaN. The second type of Micro-LED / enhanced HEMT monolithic integrated structure is to sequentially epitaxially grow Micro-LED, tunnel junction and HEMT structure on a nitride epitaxial substrate. The tunnel junction is the current expansion layer of Micro-LED. In both structures, the Micro-LED anode and the enhanced HEMT source are connected by metal to form a series structure of Micro-LED and enhanced HEMT, so as to achieve the purpose of regulating the internal current of Micro-LED through enhanced HEMT, and then regulating its luminous brightness. Since the mobility of HEMT can reach 2000 cm 2 / (V ∙ S), so a HEMT device width of less than 10μm can achieve high current output, greatly reducing the area of ​​the Micro-LED driver transistor. This enhanced HEMT / Micro-LED monolithic integrated structure is further integrated with traditional pixel circuits through bonding technology to achieve a new hybrid drive display method with high resolution, high compatibility and multi-scenario application.

[0026] Beneficial effects: Compared with the prior art, the present invention has the following significant features:

[0027] 1. The method of realizing monolithic integration of Micro-LED and enhanced HEMT through tunnel junction solves the problem of difficulty in forming p-GaN ohmic contact caused by etching process. Compared with traditional depletion-mode HEMT and Micro-LED integrated devices, this structure can reduce energy consumption and improve circuit safety;

[0028] 2. Combining HEMT / Micro-LED integrated devices with traditional display driver transistors, the high mobility advantage of the two-dimensional electron gas in HEMT is fully utilized, which greatly reduces the area of ​​the Micro-LED driver tube. At the same time, HEMT and Micro-LED based on the same material system can be monolithically integrated on the same substrate. The monolithic integrated device is compatible with the existing process line of Micro-LED display, which can effectively control the cost of industrial application;

[0029] 3. The hybrid integration solution of the present invention can achieve a larger display area and can meet the application scenarios of transparent display and flexible display. It has broad application prospects in new high-resolution and high-brightness displays. The display resolution can cover 100ppi~10000ppi. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a schematic diagram of the first Mciro-LED / enhanced HEMT monolithic integrated structure of the present invention;

[0031] Figure 2 It is a schematic structural diagram of the tunnel junction 15 of the first monolithic integrated structure 1 of the present invention;

[0032] Figure 3 It is a structural schematic diagram of the first monolithic integrated structure 1 of the present invention;

[0033] Figure 4 is the first equivalent circuit diagram of the present invention;

[0034] Figure 5 It is a schematic diagram of the structure of a first hybrid drive integrated circuit of the present invention;

[0035] Figure 6is a schematic diagram of a second Mciro-LED / enhanced HEMT monolithic integrated structure of the present invention;

[0036] Figure 7 is a structural schematic diagram of a second monolithic integrated structure 1 of the present invention;

[0037] Figure 8 is a second equivalent circuit diagram of the present invention;

[0038] Fig. 9 It is a schematic structural diagram of a second hybrid drive integrated circuit of the present invention. DETAILED DESCRIPTION

[0039] Example 1

[0040] A method for preparing a hybrid drive integrated device for Micro-LED display, comprising the following steps:

[0041] S1, such as Figure 1~Figure 2 As shown, an enhanced HEMT, a tunnel junction 15 and a Micro-LED are epitaxially grown on a sapphire substrate 4 in sequence. The enhanced HEMT includes a GaN buffer layer 11, an AlGaN barrier layer 12 and a p-GaN cap layer 13 stacked in sequence from bottom to top, wherein the AlGaN barrier layer 12 is Al x Ga 1-x N barrier layer, 0 ≤ x ≤ 1. The tunnel junction 15 includes p + -GaN tunneling layer 151, InGaN auxiliary tunneling layer 152, n + -GaN tunneling layer 153 and n-GaN extension layer 154. Micro-LED includes n-GaN electron injection layer 16, quantum well layer 17, p-GaN hole injection layer 18 stacked in sequence from bottom to top, wherein the quantum well layer 17 is In x Ga 1-x N / GaN multi-quantum well layer, 0 ≤ x ≤ 1, can cover the red, green and blue pixels of Micro-LED display.

[0042] S2. Using ICP technology, define the light-emitting area of ​​the Micro-LED (quantum well layer 17 area), and etch the non-light-emitting area to the n-GaN electron injection layer 16 in the Micro-LED. Then use ICP technology to define the gate area of ​​the enhanced HEMT (p-GaN cap layer 13 area), and etch other areas except the Micro-LED and enhanced HEMT gate areas to the AlGaN barrier layer 12 in the HEMT. Evaporate the n-GaN ohmic contact electrode 14 (Ti / Al / Ni / Au metal electrode) as the HEMT gate and source, and realize the connection between the Micro-LED cathode and the drain in the HEMT structure, and form an ohmic contact under 800°C annealing conditions. Finally, by evaporating Ni / Au electrodes and annealing, the p-GaN ohmic contact electrode 19 in the Micro-LED is obtained, as shown in Figure 3 shown.

[0043] S3. Define the device area of ​​Micro-LED / enhanced HEMT, that is, define the area of ​​the monolithic integrated structure 1, and use ICP etching technology to etch the part outside the device area to the substrate 4 to achieve separation between devices.

[0044] S4. Prepare a substrate for display drive circuit preparation, and prepare nT1C display drive circuit 2 on the substrate. nT1C display drive circuit 2 includes multiple transistors and a capacitor on the drive backplane. The type and number of transistors are designed according to different display requirements. The drive backplane is a rigid substrate (glass, quartz or silicon) or a flexible substrate (PET, PC or PI). The transistor is one or more of CMOS, LTPS, IGZO, 2D TFT, and oxide transistor.

[0045] S5. Bonding the monolithic integrated structure 1 with different light emission wavelengths to the nT1C display driving circuit 2 through mass transfer technology, and connecting the HEMT gate to the source of the last transistor of the nT1C display driving circuit 2.

[0046] like Figure 3~Figure 4 The anode of the Mciro-LED in the monolithic integrated structure 1 is bonded to the positive voltage point in the driving circuit, and the source of the enhanced HEMT is bonded to the ground point in the driving circuit. The enhanced HEMT device realizes gate control through the tunnel junction 15, and the cathode of the Micro-LED is connected to the drain of the enhanced HEMT through the n-GaN ohmic contact electrode 14, which can realize the series connection of the monolithic integrated Micro-LED structure and the enhanced HEMT structure, so as to achieve the purpose of regulating the light emission of the Micro-LED by controlling the gate voltage on the HEMT tunnel junction 15.

[0047] like Figure 5, the nT1C display driving circuit 2 of the hybrid driving integrated device for Micro-LED display obtained in this embodiment is connected to the monolithic integrated structure 1 through the bonding metal 3. The monolithic integrated structure 1 includes a GaN buffer layer 11 and an AlGaN barrier layer 12 from top to bottom, and a p-GaN cap layer 13 and an n-GaN ohmic contact electrode 14 are arranged on the lower surface of the AlGaN barrier layer 12, and a tunnel junction 15 is arranged on the lower surface of the p-GaN cap layer 13. The lower surface of the tunnel junction 15 on the left is provided with an n-GaN ohmic contact electrode 14, and the lower surface of the tunnel junction 15 on the right is provided with an n-GaN electron injection layer 16 and an n-GaN ohmic contact electrode 14, and the n-GaN ohmic contact electrode 14 extends to the p-GaN cap layer 13, the side of the tunnel junction 15 and is connected to the AlGaN barrier layer 12. The lower surface of the n-GaN electron injection layer 16 is sequentially provided with a quantum well layer 17, a p-GaN hole injection layer 18, and a p-GaN ohmic contact electrode 19. The quantum well layers 17 of the adjacent monolithic integrated structure 1 can be respectively set as a blue light quantum well, a green light quantum well, and a red light quantum well to cover the red, green, and blue pixels of the Micro-LED display.

[0048] The substrate 4 in this embodiment can be replaced by any one of silicon, silicon carbide, quartz and glass.

[0049] Example 2

[0050] A method for preparing a hybrid drive integrated device for Micro-LED display, comprising the following steps:

[0051] S1, such as Figure 6 As shown, Micro-LED, tunnel junction 15 and enhanced HEMT are epitaxially grown on sapphire substrate 4 from bottom to top. Micro-LED includes n-GaN electron injection layer 16, quantum well layer 17, p-GaN hole injection layer 18 stacked from bottom to top. Quantum well layer 17 is InGaN / GaN multi-quantum well layer, 0 ≤ x ≤ 1, which can cover the red, green and blue pixels of Micro-LED display. There is tunnel junction 15 on the surface of p-GaN hole injection layer 18, and tunnel junction 15 includes p-GaN hole injection layer 18 stacked from bottom to top. + -GaN tunneling layer 151, InGaN auxiliary tunneling layer 152, n + -GaN tunneling layer 153 and n-GaN extension layer 154. The surface of the tunnel junction 15 is provided with an enhanced HEMT, which includes a GaN buffer layer 11, an AlGaN barrier layer 12, and a p-GaN cap layer 13 stacked in sequence from bottom to top. The AlGaN barrier layer 12 is Al x Ga 1-x N barrier layers, 0 ≤ x ≤ 1.

[0052] S2. Using ICP technology, define the gate region of the enhanced HEMT, and etch other regions except the gate region of the enhanced HEMT to the AlGaN barrier layer 12. Then use ICP technology to define the light-emitting region of the Micro-LED, and etch other regions except the light-emitting region of the Micro-LED to the n-GaN electron injection layer 16 in the Micro-LED. Evaporate the n-GaN ohmic contact electrode 14 (Ti / Al / Ni / Au metal electrode) as the drain of the enhanced HEMT, the cathode of the Micro-LED, and realize the connection between the source of the enhanced HEMT and the anode of the Micro-LED, and form an ohmic contact under annealing conditions at 800°C to obtain the n-GaN ohmic contact electrode 14. Finally, evaporate the Ni / Au electrode, that is, the p-GaN ohmic contact electrode 19, to realize the ohmic contact of the gate electrode in the HEMT structure, such as Figure 7 shown.

[0053] S3. Define the device area of ​​Micro-LED / enhanced HEMT, that is, define the area of ​​the monolithic integrated structure 1, and use ICP etching technology to etch the part outside the device area to the substrate 4 to achieve separation between devices.

[0054] S4. Prepare a substrate for display drive circuit preparation, and prepare nT1C display drive circuit 2 on the substrate. nT1C display drive circuit 2 includes multiple transistors and a capacitor on the drive backplane. The type and number of transistors are designed according to different display requirements. The drive backplane is a rigid substrate (glass, quartz or silicon) or a flexible substrate (PET, PC or PI). The transistor is one or more of CMOS, LTPS, IGZO, 2D TFT, and oxide transistor.

[0055] S5. Bonding the monolithic integrated structure 1 with different light emission wavelengths to the nT1C display driving circuit 2 through mass transfer technology, and connecting the HEMT gate to the source of the last transistor of the nT1C display driving circuit 2.

[0056] like Figure 8 , the drain in the Mciro-HEMT structure of the monolithic integrated structure 1 is bonded to the positive voltage site in the driving circuit, and the cathode in the Micro-LED structure is bonded to the ground site in the driving circuit.

[0057] like Fig. 9The nT1C display driving circuit 2 of the hybrid driving integrated device for Micro-LED display obtained in this embodiment is connected to the monolithic integrated structure 1 through the bonding metal 3. The lower surface of the n-GaN electron injection layer 16 of the monolithic integrated structure 1 is provided with a quantum well layer 17 and an n-GaN ohmic contact electrode 14, and the lower surface of the quantum well layer 17 is provided with a p-GaN hole injection layer 18, a tunnel junction 15, a GaN buffer layer 11, and an AlGaN barrier layer 12 in sequence. The surface of the AlGaN barrier layer 12 is provided with an n-GaN ohmic contact electrode 14 and a p-GaN cap layer 13, at least one n-GaN ohmic contact electrode 14 extends to the side of the AlGaN barrier layer 12 and the GaN buffer layer 11 and is connected to the tunnel junction 15, and a p-GaN ohmic contact electrode 19 is provided on the surface of the p-GaN cap layer 13.

[0058] The preparation difficulty of this embodiment is lower than that of embodiment 1.

Claims

1. A method for preparing a hybrid drive integrated device for Micro-LED display, characterized in that: The following steps are involved: Step 1: epitaxially growing a GaN buffer layer (11), an AlGaN barrier layer (12), a p-GaN cap layer (13), a tunnel junction (15), an n-GaN electron injection layer (16), a quantum well layer (17), and a p-GaN hole injection layer (18) in sequence on a substrate (4); Step 2: Define the light-emitting area of ​​the Micro-LED by inductively coupled plasma etching, etch the non-light-emitting area to the tunnel junction (15), then define the HEMT gate area, etch the other areas except the Micro-LED and HEMT gate areas to the AlGaN barrier layer (12), evaporate the n-GaN ohmic contact electrode (14), and evaporate the p-GaN ohmic contact electrode (19) on the surface of the p-GaN hole injection layer (18); Step 3, defining the area of ​​the monolithic integrated structure (1), and etching the portion outside the monolithic integrated structure (1) to the substrate (4) by ICP method to obtain a separated device; Step 4, preparing nT1C display driving circuit (2); Step 5: bonding the separated device to the nT1C display driving circuit (2) through the bonding metal (3) by means of a mass transfer method, and removing the substrate (4) to obtain a hybrid driving integrated device; The hybrid drive integrated device comprises a monolithic integrated structure (1) and an nT1C display drive circuit (2), wherein the nT1C display drive circuit (2) is connected to the monolithic integrated structure (1) via a bonding metal (3); the monolithic integrated structure (1) comprises a GaN buffer layer (11) and an AlGaN barrier layer (12) in sequence, wherein a p-GaN cap layer (13) and an n-GaN ohmic contact electrode (14) are arranged on a surface of the AlGaN barrier layer (12) away from the GaN buffer layer (11), and the p-GaN cap layer (13) is away from the AlGaN barrier layer ( A tunnel junction (15) is arranged on the surface of a p-GaN cap layer (13) and a p-GaN ohmic contact electrode (14), at least one of the n-GaN ohmic contact electrodes (14) extends to a p-GaN cap layer (13) and a side of the tunnel junction (15) and is connected to an AlGaN barrier layer (12), and a quantum well layer (17), a p-GaN hole injection layer (18), and a p-GaN ohmic contact electrode (19) are arranged on the surface of the n-GaN electron injection layer (16); the tunnel junction (15) comprises a p-GaN cap layer (13) and a side of the tunnel junction (15) and is connected to an AlGaN barrier layer (12). + -GaN tunneling layer (151), InGaN auxiliary tunneling layer (152), n + -GaN tunneling layer (153) and n-GaN extension layer (154), the p + The p-GaN tunneling layer (151) is connected to the p-GaN cap layer (13).

2. A method for preparing a hybrid drive integrated device for Micro-LED display, characterized in that: The following steps are involved: Step 1: epitaxially growing an n-GaN electron injection layer (16), a quantum well layer (17), a p-GaN hole injection layer (18), a tunnel junction (15), a GaN buffer layer (11), an AlGaN barrier layer (12), and a p-GaN cap layer (13) in sequence on a substrate (4); Step 2: Define the HEMT gate region by ICP method, etch other regions to the AlGaN barrier layer (12), define the light-emitting region of the Micro-LED, etch other regions except the light-emitting region of the Micro-LED to the n-GaN electron injection layer (16), evaporate the n-GaN ohmic contact electrode (14), and evaporate the p-GaN ohmic contact electrode (19) on the surface of the p-GaN cap layer (13); Step 3, defining the area of ​​the monolithic integrated structure (1), and etching the portion outside the monolithic integrated structure (1) to the substrate (4) by ICP method to obtain a separated device; Step 4, preparing nT1C display driving circuit (2); Step 5: bonding the separated device to the nT1C display driving circuit (2) through the bonding metal (3) by means of a mass transfer method, and removing the substrate (4) to obtain a hybrid driving integrated device; The hybrid drive integrated device comprises a monolithic integrated structure (1) and an nT1C display drive circuit (2), wherein the nT1C display drive circuit (2) is connected to the monolithic integrated structure (1) via a bonding metal (3); the monolithic integrated structure (1) comprises an n-GaN electron injection layer (16), a quantum well layer (17) and an n-GaN ohmic contact electrode (14) are arranged on the surface of the n-GaN electron injection layer (16), and a p-GaN hole injection layer (18), a tunnel junction electrode (14) and a p-GaN hole injection layer (18) are arranged on the surface of the quantum well layer (17) in sequence. (15), a GaN buffer layer (11), and an AlGaN barrier layer (12); an n-GaN ohmic contact electrode (14) and a p-GaN cap layer (13) are arranged on the surface of the AlGaN barrier layer (12); at least one n-GaN ohmic contact electrode (14) extends to the side of the AlGaN barrier layer (12) and the GaN buffer layer (11) and is connected to the tunnel junction (15); a p-GaN ohmic contact electrode (19) is arranged on the surface of the p-GaN cap layer (13); the tunnel junction (15) comprises p-GaN and p-GaN cap layers (13) in sequence. + -GaN tunneling layer (151), InGaN auxiliary tunneling layer (152), n + -GaN tunneling layer (153) and n-GaN extension layer (154), the p + The p-GaN tunneling layer (151) is connected to the p-GaN hole injection layer (18).

3. A method for preparing a hybrid drive integrated device for Micro-LED display according to claim 1 or 2, characterized in that: The quantum well layer (17) is In x Ga 1-x N / GaN multi-quantum well layer, 0 ≤ x ≤ 1, displays red, green or blue light.

4. A method for preparing a hybrid drive integrated device for Micro-LED display according to claim 1 or 2, characterized in that: The n-GaN ohmic contact electrode (14) is a metal electrode formed of one or more of Ti, Al, Ni, Pt, and Au.

5. A method for preparing a hybrid drive integrated device for Micro-LED display according to claim 1 or 2, characterized in that: The nT1C display driving circuit (2) comprises a plurality of transistors and capacitor devices on a driving backplane.

6. The method for preparing a hybrid drive integrated device for Micro-LED display according to claim 5, characterized in that: The transistor is one or more of CMOS, LTPS, IGZO, and 2D TFT.

7. The method for preparing a hybrid drive integrated device for Micro-LED display according to claim 1 or 2, characterized in that: The substrate (4) is any one of sapphire, silicon, silicon carbide, quartz, and glass.

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