Preparation method of photoelectric device, photoelectric device and display device

Abstract

The invention discloses a preparation method of a photoelectric device, the photoelectric device and a display device. The preparation method comprises the following steps: providing a prefabricated member of the photoelectric device; arranging first inorganic semiconductor particles on the photoelectric device prefabricated member to form a dry film, and performing ion irradiation treatment on the dry film to obtain a first carrier functional layer; arranging second inorganic semiconductor particles on the first carrier function layer to obtain a second carrier function layer; and forming a second electrode on the second carrier function layer to obtain the photoelectric device. According to the preparation method of the photoelectric device, surface defects of the first carrier function layer can be increased through ion irradiation treatment, interface defects between the first carrier function layer and the second carrier function layer are increased, carrier migration is hindered, injection of electrons and holes of the photoelectric device is more balanced, and the photoelectric device is more stable in performance. And the service life of the photoelectric device is prolonged.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic devices, and in particular to a method for preparing an optoelectronic device, an optoelectronic device and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting devices (OLED) and quantum dot light-emitting devices (QLED). OLED has become the mainstream technology in the field of display technology due to its excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLED has the advantages of saturated color of emitted light, adjustable wavelength, low start-up voltage, good solution processability, easy fine control of quantum dots, and high quantum yield of photoluminescence and electroluminescence. In recent years, it has become a strong competitor of OLED.

[0003] The structure of traditional OLED and QLED devices generally includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. Under the action of the electric field, the holes generated by the anode of the optoelectronic device and the electrons generated by the cathode move and are injected into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules and finally producing visible light.

[0004] The life of the photoelectric device prepared by the existing preparation method of the photoelectric device is relatively short and needs to be further improved. Summary of the invention

[0005] In view of this, the present application provides a method for preparing a photoelectric device, aiming to improve the problem of short life of the photoelectric device prepared by the existing preparation method.

[0006] The embodiment of the present application is implemented as follows: a method for preparing a photoelectric device comprises the following steps:

[0007] Providing a photovoltaic device preform, wherein the photovoltaic device preform comprises a first electrode;

[0008] Disposing first inorganic semiconductor particles on the optoelectronic device preform to form a dry film, and subjecting the dry film to ion irradiation treatment to obtain a first carrier functional layer;

[0009] Disposing second inorganic semiconductor particles on the first carrier functional layer to obtain a second electronic functional layer and a second carrier functional layer;

[0010] A second electrode is formed on the second carrier functional layer to obtain a photoelectric device.

[0011] Optionally, in some embodiments of the present application, the optoelectronic device preform further includes a light-emitting layer stacked on the first electrode; or

[0012] The forming of the second electrode on the second carrier functional layer includes: forming a stacked light emitting layer and a second electrode on the second carrier functional layer.

[0013] Optionally, in some embodiments of the present application, the ions used in the ion irradiation treatment include He + ,Ar + , Kr + 、Xe + 、Ne + and N + One or more of .

[0014] Optionally, in some embodiments of the present application, the energy of the ion beam used in the ion irradiation treatment is 15-55 keV; and / or

[0015] The ion dose used in the ion irradiation treatment is 1×10 12 ~1×10 16 ions / cm 2 ; and / or

[0016] The thickness of the first carrier functional layer and the thickness of the second carrier functional layer are independently 14 to 20 nm.

[0017] Optionally, in some embodiments of the present application, disposing the first inorganic semiconductor particles on the optoelectronic device preform includes: providing first inorganic semiconductor particles and a first solvent, mixing to obtain a first dispersion, disposing the first dispersion on the optoelectronic device preform to form a first liquid film, annealing the first liquid film to obtain a dry film, and ion irradiating the dry film to obtain a first carrier functional layer; and / or

[0018] The step of disposing the second inorganic semiconductor particles on the first carrier functional layer comprises: providing second inorganic semiconductor particles and a second solvent, mixing them to obtain a second dispersion, disposing the second dispersion on the first carrier functional layer to form a second liquid film, and annealing the second liquid film to obtain a second carrier functional layer.

[0019] Optionally, in some embodiments of the present application, the first carrier functional layer is a first electronic functional layer, the second carrier functional layer is a second electronic functional layer, the first inorganic semiconductor particles and the second inorganic semiconductor particles independently include first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the first undoped metal oxide particles includes ZnO, TiO 2 SnO 2 、ZrO 2 、 2 O 5 One or more of the following, the metal oxide in the first doped metal oxide particles comprises ZnO, TiO 2 SnO 2 、ZrO 2 、 2 O 5 、Al 2 O 3 The doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS, the IIIA-VA semiconductor material includes one or more of InP and GaP, and the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; or

[0020] The first carrier functional layer is a first hole functional layer, the second carrier functional layer is a second hole functional layer, the first inorganic semiconductor particles and the second inorganic semiconductor particles each independently include one or more of second doped metal oxide particles, second non-doped metal oxide particles, metal sulfides and metal nitrides, wherein the metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles each independently include MoO 3 , WO 3 、NiO、CrO 3 , CuO, Cu 2 O.V 2 O 5 One or more of the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V.

[0021] Optionally, in some embodiments of the present application, in the first dispersion, the concentration of the first inorganic semiconductor particles is 10 to 30 mg / ml; and / or

[0022] In the second dispersion, the concentration of the second inorganic semiconductor particles is 10 to 30 mg / ml; and / or

[0023] The temperature of annealing the first liquid film is 75-85° C. and the time is 5-10 min; and / or

[0024] The temperature of annealing the second liquid film is 75-85° C. and the time is 5-10 min; and / or

[0025] The first solvent and the second solvent independently include one or more of isopropanol, ethanol, dimethyl sulfoxide, N-methylpyrrolidone and chlorobenzene.

[0026] Optionally, in some embodiments of the present application, the first carrier functional layer is a first electronic functional layer, the second carrier functional layer is a second electronic functional layer, and the optoelectronic device preform further includes a third hole functional layer and a light-emitting layer stacked on the first electrode; or

[0027] The first carrier functional layer is a first electron functional layer, the second carrier functional layer is a second electron functional layer, and the forming of the second electrode on the second carrier functional layer comprises: forming a stacked light-emitting layer, a third hole functional layer and a second electrode on the second carrier functional layer; or

[0028] The first carrier functional layer is a first hole functional layer, the second carrier functional layer is a second hole functional layer, and the optoelectronic device preform further comprises a third electronic functional layer and a light-emitting layer stacked on the first electrode; or

[0029] The first carrier functional layer is a first hole functional layer, the second carrier functional layer is a second hole functional layer, and forming a second electrode on the second carrier functional layer includes: forming a stacked light-emitting layer, a third electronic functional layer and a second electrode on the second carrier functional layer.

[0030] Optionally, in some embodiments of the present application, the first electrode and the second electrode each independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode or an alloy electrode, the material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide, and the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 、TiO 2 / Al / TiO 2 , ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF 2 / Al、CsF / Al、CaCO 3 / Al or BaF 2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes Au:Mg alloy electrode or Ag:Mg alloy electrode; and / or

[0031] The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonds of BN, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSe Te, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, the IV-VI group compound includes SnS, S The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaP One or more of Sb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and the Group I-III-VI compound includes CuInS; 2 、CuInSe 2 AgInS 2 One or more of; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the inorganic perovskite semiconductor has a general structural formula of AMX 3 , where A is Cs + ions, M is a divalent metal cation, including Pb2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of the organic-inorganic hybrid perovskite semiconductor has the general structural formula of BMX 3 , where B is an organic amine cation, including CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 ] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or

[0032] The material of the third hole functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'- Bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'- Biphenyl-4-4'-diamine, spiro NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly( p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO 3 derivatives, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, doped graphene, undoped graphene, C60, copper phthalocyanine, the second doped metal oxide particles, the second undoped metal oxide particles, the metal sulfide and the metal nitride; and / or

[0033] The material of the third electronic functional layer includes one or more of inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional materials include one or more of the first doped metal oxide particles, the first undoped metal oxide particles, the IIB-VIA semiconductor materials, the IIIA-VA semiconductor materials and the IB-IIIA-VIA semiconductor materials. The organic electronic functional materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds and fullerene derivatives.

[0034] Correspondingly, an embodiment of the present application further provides a photoelectric device, which is prepared by the above-mentioned preparation method.

[0035] Correspondingly, an embodiment of the present application also provides a display device, comprising the above-mentioned optoelectronic device.

[0036] In the preparation method of the optoelectronic device described in the present application, the first carrier functional layer is obtained by ion irradiation treatment of the dry film formed by the first inorganic semiconductor particles. The ion irradiation treatment can cause the first inorganic semiconductor particles on the surface of the first carrier functional layer to undergo lattice distortion, thereby destroying the symmetry of the lattice, causing band bending, and causing defects in the first inorganic semiconductor particles, thereby forming a defect interface between the first carrier functional layer and the second carrier functional layer, and the defect interface will introduce additional interface barriers. In addition, a large number of defects caused by disordered atoms and incomplete chemical bonds in the lattice of the first inorganic semiconductor particles with lattice distortion will trap / capture carriers, making it difficult for them to move, thereby hindering the transmission of carriers; further, the defects will be charged after capturing carriers and form a potential obstacle, thereby further hindering the transmission of carriers. In this way, for carrier (electron or hole) excess devices, the ion irradiation treatment can hinder the carrier migration between the first carrier functional layer and the second carrier functional layer through the interface defects between the two, making the injection of electrons and holes in the photoelectric device more balanced, thereby improving the life of the photoelectric device. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0038] Figure 1 is a flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application;

[0039] Figure 2is a schematic structural diagram of an optoelectronic device provided in an embodiment of the present application;

[0040] Figure 3 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0041] Figure 4 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0042] Figure 5 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0043] Figure 6 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0044] Figure 7 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0045] Figure 8 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0046] Fig. 9 It is a current density-external quantum efficiency curve of the optoelectronic devices of Examples 1, 2, 10 to 12 of the present application and Comparative Examples 1, 4 to 6;

[0047] Fig.10 It is a voltage-current density curve diagram of the photovoltaic devices of Examples 1, 2, 10-12 of the present application and Comparative Examples 1, 4-6.

[0048] Reference numerals:

[0049] Optoelectronic device 100; first electrode 10; first carrier functional layer 20; second carrier functional layer 30; second electrode 40; light-emitting layer 50; third hole functional layer 60, third hole transport layer 61; third hole injection layer 62; third electron functional layer 70; third electron transport layer 71; third electron injection layer 72. DETAILED DESCRIPTION

[0050] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0051] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0052] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0053] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0054] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0055] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0056] The technical solution of this application is as follows:

[0057] First, see Figures 1-2 The present invention provides a method for preparing a photoelectric device, comprising the following steps:

[0058] Step S11, providing a photoelectric device preform, wherein the photoelectric device preform includes a first electrode 10;

[0059] Step S12, disposing first inorganic semiconductor particles on the optoelectronic device preform to form a dry film, and subjecting the dry film to ion irradiation treatment to obtain a first carrier functional layer 20;

[0060] Step S13, disposing second inorganic semiconductor particles on the first carrier functional layer 20 to obtain a second carrier functional layer 30;

[0061] Step S14 : forming a second electrode 40 on the second carrier functional layer 30 to obtain the optoelectronic device 100 .

[0062] It should be noted that ion irradiation treatment is a technology that uses high-energy ions to modify materials. Its basic principle is: when high-energy ions pass through the target material, Coulomb electromagnetic interaction is generated between the high-energy ions and the individual atoms in the target material. In the process of interaction between the high-energy ions and the target material, due to the loss of electron energy and nuclear energy of the high-energy ions, the high-energy ions will gradually slow down and eventually stay in the crystal lattice of the target material, causing changes such as distortion of the lattice or penetrating the target material, thereby causing changes in the physical, chemical or electrical properties of the target material, thereby changing the physical, chemical or electrical properties of the target material.

[0063] In the preparation method of the optoelectronic device described in the present application, the first carrier functional layer 20 is obtained by ion irradiation treatment of the dry film formed by the first inorganic semiconductor particles. The ion irradiation treatment can cause the first inorganic semiconductor particles on the surface of the first carrier functional layer 20 to undergo lattice distortion, thereby destroying the symmetry of the lattice, causing band bending, and causing defects in the first inorganic semiconductor particles, thereby forming a defect interface between the first carrier functional layer 20 and the second carrier functional layer, and the defect interface will introduce additional interface barriers. In addition, a large number of defects caused by disordered atoms and incomplete chemical bonds in the lattice of the first inorganic semiconductor particles with lattice distortion will trap / capture carriers, making it difficult for them to move, thereby hindering the transmission of carriers; further, the defects will be charged after capturing carriers and form a potential obstacle, thereby further hindering the transmission of carriers. In this way, for carrier (electron or hole) excess devices, the ion irradiation treatment can hinder the carrier migration between the first carrier functional layer and the second carrier functional layer through the interface defects between the two, making the injection of electrons and holes in the photoelectric device more balanced, thereby improving the life of the photoelectric device.

[0064] When the photoelectric device 100 is an electron-excess device (i.e., a photoelectric device in which the electron mobility is higher than the hole mobility), the first carrier functional layer 20 is a first electron functional layer, and the second carrier functional layer 30 is a second electron functional layer. The ion irradiation treatment can increase the surface defects of the first electron functional layer and increase the interface defects between the first electron functional layer and the second electron functional layer, thereby hindering electron migration, reducing the electron mobility of the photoelectric device 100, and making the injection of electrons and holes of the photoelectric device 100 more balanced, thereby improving the life of the photoelectric device 100.

[0065] When the photoelectric device 100 is a hole-excess device (i.e., a photoelectric device in which the hole mobility is higher than the electron mobility), the first carrier functional layer 20 is a first hole functional layer, and the second carrier functional layer 30 is a second hole functional layer. The ion irradiation treatment can increase the surface defects of the first hole functional layer and increase the interface defects between the first hole functional layer and the second hole functional layer, thereby hindering hole migration, reducing the hole mobility of the photoelectric device 100, and making the injection of electrons and holes of the photoelectric device 100 more balanced, thereby improving the life of the photoelectric device 100.

[0066] In addition, the preparation method of the optoelectronic device of the present application reduces the carrier mobility by performing ion irradiation treatment on the first carrier functional layer 20 to form a defect interface between the first carrier functional layer 20 and the second carrier functional layer 30. This method does not require the introduction of new materials and does not involve the problem of contact between the defect interface and other functional layers. This can more effectively improve the life of the optoelectronic device 100.

[0067] In some embodiments, the first carrier functional layer 20 is a first electronic functional layer, the second carrier functional layer 30 is a second electronic functional layer, the first inorganic semiconductor particles and the second inorganic semiconductor particles each independently include first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials, and IB-IIIA-VIA semiconductor materials. The material of the first undoped metal oxide particles includes ZnO, TiO 2 SnO 2 、ZrO 2 、 2 O 5 One or more of the following, the metal oxide in the first doped metal oxide particles comprises ZnO, TiO 2 SnO 2 、ZrO 2 、 2 O 5 、Al2 O 3 The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS.

[0068] In some other embodiments, the first carrier functional layer 20 is a first hole functional layer, the second carrier functional layer 30 is a second hole functional layer, the first inorganic semiconductor particles and the second inorganic semiconductor particles each independently include one or more of second doped metal oxide particles, second non-doped metal oxide particles, metal sulfides and metal nitrides, wherein the metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles each independently include MoO 3 , WO 3 、NiO、CrO 3 , CuO, Cu 2 O.V 2 O 5 The doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V, and the metal sulfide includes CuS, MoS 3 , WS 3 One or more of, the metal nitride comprises P-type gallium nitride.

[0069] It can be understood that the first electron functional layer can be a first electron transport layer or a first electron injection layer, and the second electron functional layer can be a second electron transport layer or a second electron injection layer.

[0070] It can be understood that the first hole functional layer can be a first hole transport layer or a first hole injection layer, and the second hole functional layer can be a second hole transport layer or a second hole injection layer.

[0071] In some embodiments, see Figure 3 The optoelectronic device preform further includes a light-emitting layer 50 stacked on the first electrode 10 .

[0072] In some other embodiments, see Figure 4The forming of the second electrode 40 on the second carrier functional layer 30 includes: forming a stacked light emitting layer 50 and the second electrode 40 on the second carrier functional layer 30 .

[0073] It can be understood that when the optoelectronic device 100 includes a light-emitting layer 50, the optoelectronic device 100 is a light-emitting device. In this way, a defect interface is formed between the first carrier functional layer 20 and the second carrier functional layer 30 through ion irradiation treatment, which can make the injection of electrons and holes in the light-emitting layer 50 of the optoelectronic device 100 more balanced, thereby effectively reducing the negative effects such as exciton quenching and efficiency roll-off caused by the charging of the light-emitting material in the light-emitting layer 50, thereby improving the brightness and life of the optoelectronic device 100.

[0074] In some embodiments, see Figure 5 When the first carrier functional layer 20 is a first electronic functional layer and the second carrier functional layer 30 is a second electronic functional layer, the optoelectronic device preform also includes a third hole functional layer 60 and a light-emitting layer 50 stacked on the first electrode 10, and the third hole functional layer 60 includes one or both of a third hole transport layer 61 and a third hole injection layer 62.

[0075] In other embodiments, see Figure 6 When the first carrier functional layer 20 is a first electronic functional layer and the second carrier functional layer 30 is a second electronic functional layer, the forming of the second electrode 40 on the second carrier functional layer 30 includes: sequentially forming a stacked light emitting layer 50, a third hole functional layer 60 and a second electrode 40 on the second carrier functional layer 30. The third hole functional layer 60 includes one or both of a third hole transport layer 61 and a third hole injection layer 62.

[0076] In some embodiments, see Figure 7 When the first carrier functional layer 20 is a first hole functional layer and the second carrier functional layer 30 is a second hole functional layer, the optoelectronic device preform also includes a third electron functional layer 70 and a light-emitting layer stacked on the first electrode 10, and the third electron functional layer 70 includes one or both of a third electron transport layer 71 and a third electron injection layer 72.

[0077] In other embodiments, see Figure 8When the first carrier functional layer 20 is a first hole functional layer and the second carrier functional layer 30 is a second hole functional layer, the forming of the second electrode 40 on the second carrier functional layer 30 includes: sequentially forming a stacked light emitting layer 50, a third electron functional layer 70 and a second electrode 40 on the second carrier functional layer 30. The third electron functional layer 70 includes one or both of a third electron transport layer 71 and a third electron injection layer 72.

[0078] The method of forming the second electrode 40 and the light-emitting layer 50, the method of disposing the first inorganic semiconductor particles on the optoelectronic device preform, the method of disposing the second inorganic semiconductor particles on the first carrier functional layer 20, and the method of forming the third hole functional layer 60 and the third electron functional layer 70 can be implemented by conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction method, anodization method, electrolytic deposition method, and coprecipitation method. The physical method includes physical coating method and solution method, among which the physical coating method includes: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc.; the solution method can be spin coating, printing method, inkjet printing method, doctor blade method, printing method, dip pulling method, immersion method, spray coating method, roll coating method, casting method, slit coating method and strip coating method, etc.

[0079] In at least some embodiments, the step of disposing the first inorganic semiconductor particles on the optoelectronic device preform includes: providing first inorganic semiconductor particles and a first solvent, mixing them to obtain a first dispersion, disposing the first dispersion on the optoelectronic device preform to form a first liquid film, annealing the first liquid film to obtain a dry film, and ion irradiating the dry film to obtain a first carrier functional layer 20.

[0080] In at least some embodiments, disposing the second inorganic semiconductor particles on the first carrier functional layer 20 includes: providing second inorganic semiconductor particles and a second solvent, mixing to obtain a second dispersion, disposing the second dispersion on the first carrier functional layer 20 to form a second liquid film, and annealing the second liquid film to obtain a second carrier functional layer 30.

[0081] The first solvent and the second solvent may independently include, but are not limited to, one or more of isopropanol, ethanol, DMSO (dimethyl sulfoxide), NMP (N-methylpyrrolidone) and chlorobenzene.

[0082] In some embodiments, in the first dispersion, the concentration of the first inorganic semiconductor particles is 10-30 mg / ml, for example, 10 mg / ml, 12 mg / ml, 15 mg / ml, 16 mg / ml, 18 mg / ml, 20 mg / ml, 22 mg / ml, 25 mg / ml, 28 mg / ml, 30 mg / ml, etc. Within the concentration range, it is beneficial to prepare a dry film with good film forming properties, and further to prepare a first carrier functional layer 20 with good film forming properties.

[0083] In some embodiments, in the second dispersion, the concentration of the second inorganic semiconductor particles is 10-30 mg / ml, for example, 10 mg / ml, 12 mg / ml, 15 mg / ml, 16 mg / ml, 18 mg / ml, 20 mg / ml, 22 mg / ml, 25 mg / ml, 28 mg / ml, 30 mg / ml, etc. Within the concentration range, it is beneficial to prepare the second carrier functional layer 30 with better film-forming properties.

[0084] The temperature of the annealing treatment of the first liquid film is 75-85° C., for example, 75° C., 78° C., 80° C., 82° C., 85° C., etc., and the time is 5-10 min., for example, 5 min., 6 min., 8 min., 10 min., etc. Within the temperature and time range, it is beneficial to prepare a dry film with good film forming properties, and further to prepare the first carrier functional layer 20 with good film forming properties.

[0085] The temperature for annealing the second liquid film is 75-85° C., for example, 75° C., 78° C., 80° C., 82° C., 85° C., etc., and the time is 5-10 min., for example, 5 min., 6 min., 8 min., 10 min., etc. Within the temperature and time range, it is beneficial to prepare the second carrier functional layer 30 with good film forming properties.

[0086] The ions (ion source or gas source) used in the ion irradiation treatment include He + ,Ar + , Kr + 、Xe + 、Ne + and N + In other words, the ion beam used in the ion irradiation treatment may include but is not limited to He + Ion beam, Ar + Ion beam, Kr + Ion beam, Xe + Ion beam, Ne + Ion beam and N + In other words, the ion irradiation treatment can be He+ Ion irradiation treatment, Ar + Ion irradiation treatment, Kr + Ion irradiation treatment, Xe + Ion irradiation treatment, Ne + Ion irradiation treatment and N + One or more of ion irradiation treatments.

[0087] In some embodiments, the energy of the ion beam used in the ion irradiation treatment is 15-55 keV, for example, 15-35 keV, 20-40 keV, 25-45 keV, 30-50 keV, 35-55 keV, etc. Within the energy range, the first inorganic semiconductor particles on the surface of the dry film can be effectively lattice-distorted to an appropriate extent, thereby facilitating the preparation of a photoelectric device 100 with a more balanced electron-hole injection.

[0088] In some embodiments, the ion dose used in the ion irradiation treatment is 1×10 12 ~1×10 16 ions / cm 2 , for example, 1×10 12 ~1×10 14 ions / cm 2 , 1×10 13 ~1×10 15 ions / cm 2 , 5×10 13 ~1×10 16 ions / cm 2 In the dosage range, the first inorganic semiconductor particles on the surface of the dry film can be effectively subjected to an appropriate amount of lattice distortion, thereby facilitating the preparation of a photoelectric device 100 with a more balanced electron-hole injection.

[0089] In some embodiments, the instrument used for the ion irradiation treatment is a known instrument for ion irradiation treatment, such as an ion implanter, an ion accelerator, and the like.

[0090] In some embodiments, the thickness of the first carrier functional layer 20 is 14-20 nm, and the thickness of the second carrier functional layer 30 is 14-20 nm. Within the thickness range, it is beneficial to prepare a photoelectric device 100 with more balanced electron-hole injection, thereby facilitating the preparation of a photoelectric device 100 with higher brightness and longer life.

[0091] Within the range of the energy and dosage of the ion irradiation treatment and the thickness of the first carrier functional layer 20, the first carrier functional layer 20 can be effectively ion irradiated to achieve a better ion irradiation effect, and the optoelectronic device preform under the first carrier functional layer 20 can also be protected, thereby facilitating the preparation of an optoelectronic device 100 with higher brightness and longer life.

[0092] The first electrode 10 and the second electrode 40 are electrodes for optoelectronic devices known in the art, for example, they can each independently include but are not limited to doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, metal single substance electrodes or alloy electrodes. The material of the doped metal oxide electrode can include but is not limited to one or more of indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), indium doped zinc oxide (IZO), magnesium doped zinc oxide (MZO), aluminum doped magnesium oxide (AMO), and cadmium doped zinc oxide. The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 、TiO 2 / Al / TiO 2 , ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF 2 / Al、CsF / Al、CaCO 3 / Al、BaF 2 / Ca / Al, etc., where " / " represents a stacked structure, for example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence. The material of the metal single substance electrode may include but is not limited to one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba. The alloy electrode includes but is not limited to an Au:Mg alloy electrode or an Ag:Mg alloy electrode.

[0093] In some embodiments, the anode is an electrode with a relatively high work function, for example, it may include but is not limited to a doped metal oxide electrode with a relatively high work function, a metal single substance electrode with a relatively high work function, and a carbon nanotube electrode. The metal single substance electrode with a relatively high work function may be selected from but is not limited to Ni, Pt, Au, Ag, Ir, etc.

[0094] In some embodiments, the cathode is an electrode with a relatively low work function, such as but not limited to a metal single substance electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The metal single substance electrode with a relatively low work function may be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function may be Ca / Al, LiF / Ca, LiF / Al, BaF 2 / Al、CsF / Al、CaCO 3 / Al、BaF 2 / Ca / Al, etc. The alloy electrodes with relatively low work functions are Au:Mg and Ag:Mg, etc.

[0095] The material of the light-emitting layer 50 may include, but is not limited to, one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0096] The organic light emitting material may include but is not limited to CBP:Ir(mppy) 3 (4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)), TCTX:Ir(mmpy)(4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing BN covalent bonds, HLCT (hybridized localized charge transfer excited state) materials, Exciplex (exciplex) luminescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives. One or more thereof.

[0097] The quantum dot light-emitting material may include, but is not limited to, one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0098] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots may respectively include but are not limited to one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound may include but is not limited to one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb. The I-III-VI group compound may include but is not limited to CuInS 2 、CuInSe 2 AgInS 2 One or more of .

[0099] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0100] The perovskite semiconductor material may include but is not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The inorganic perovskite semiconductor has the general structural formula AMX 3 , where A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , where B is an organic amine cation, including CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 ] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

[0101] The material of the third hole functional layer 60 can be a material known in the art for a hole functional layer, for example, can be selected from but not limited to 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD) ), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-diphenyl (1-Naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TA PC), 1,3-di(carbazole-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO 3 Derivatives (PEDOT:PSS:s-MoO 3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), doped graphene, undoped graphene, C60, copper phthalocyanine, and one or more of the second doped metal oxide particles, second undoped metal oxide particles, metal sulfides and metal nitrides described above.

[0102] The material of the third electronic functional layer 70 is a material known in the art for electronic functional layers, for example, each independently selected from but not limited to one or more of inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional materials include but are not limited to the first doped metal oxide particles, the first non-doped metal oxide particles, the IIB-VIA semiconductor materials, the IIIA-VA semiconductor materials and the IB-IIIA-VIA semiconductor materials described above. The organic electronic functional materials include but are not limited to one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives (PCBM).

[0103] It can be understood that when the optoelectronic device 100 also includes functional layers conventionally used in optoelectronic devices that help improve the performance of the optoelectronic device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc., the preparation method of the optoelectronic device 100 may also include the step of preparing the above-mentioned functional layers using conventional techniques in the field.

[0104] It can be understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emitting requirements of the optoelectronic device 100 .

[0105] In some embodiments, the optoelectronic device preform further includes a substrate, and the first electrode 10 is disposed on the substrate.

[0106] The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include but is not limited to one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide and polyether sulfone.

[0107] It is understood that the optoelectronic device 100 may be an upright optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 may be a quantum dot optoelectronic device or an organic optoelectronic device.

[0108] Second, see Figures 2 to 8 The embodiment of the present application also provides a photoelectric device 100 manufactured by the above-mentioned method for manufacturing a photoelectric device.

[0109] In a third aspect, the present application also relates to a display device, comprising the optoelectronic device 100 .

[0110] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0111] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0112] Example 1

[0113] Providing a substrate having an ITO anode with a thickness of 80 nm, ultrasonically cleaning the ITO-coated substrate with acetone and ethanol for 15 minutes, then cleaning it again with deionized water, then drying it on a hot plate at 150° C. for 10 minutes, and finally irradiating it with ultraviolet light for 20 minutes to improve the work function and surface energy of ITO;

[0114] In a glove box, spin-coat a PEDOT:PSS material with a mass concentration of 2.8% on the anode at a spin-coating speed of 3000 rpm for 30 seconds and anneal at 150° C. for 20 minutes to obtain a hole injection layer with a thickness of 20 nm;

[0115] Spin coating the TFB material with a concentration of 6.5 mg / mL on the hole injection layer at a spin coating speed of 3000 rpm for 30 seconds, and annealing at 120° C. for 20 minutes to obtain a hole transport layer with a thickness of 20 nm;

[0116] Spin coating CdZnSe blue light quantum dots with a concentration of 10 mg / mL on the hole transport layer at a spin coating speed of 1500 rpm for 30 seconds, and annealing at 100° C. for 5 minutes to obtain a light-emitting layer;

[0117] The luminescent layer was spin-coated with an ethanol solution of ZnO with a concentration of 20 mg / mL at a speed of 4000 rpm for 30 seconds and annealed at 80° C. for 8 minutes to obtain a dry film. The dry film was placed in an ion implanter for He + Ion irradiation treatment, in which the He generated by the ion implanter + The energy of the ion beam is 35 keV, He + The ion dose is 1×10 12 ions / cm 2 , obtaining a first electron transport layer with a thickness of 18 nm;

[0118] Spin coating a ZnO ethanol solution with a concentration of 20 mg / mL on the first electron transport layer at a spin coating speed of 4000 rpm for 30 seconds, and annealing at 80° C. for 8 minutes to obtain a second electron transport layer with a thickness of 18 nm;

[0119] Vapor depositing Al material on the second electron transport layer at a rate of 1 angstrom / second for 100 seconds to obtain a cathode with a thickness of 100 nm;

[0120] Encapsulation is performed to obtain an optoelectronic device.

[0121] Example 2

[0122] Providing a substrate with an Al cathode having a thickness of 100 nm, ultrasonically cleaning the ITO-coated substrate with acetone and ethanol for 15 minutes, then cleaning it again with deionized water, then drying it on a hot plate at 150° C. for 10 minutes, and finally irradiating it with ultraviolet light for 20 minutes to increase the work function and surface energy of Al;

[0123] The cathode was spin-coated with an ethanol solution of ZnO with a concentration of 20 mg / mL at a speed of 4000 rpm for 30 seconds and annealed at 80° C. for 8 minutes to obtain a dry film. The dry film was placed in an ion implanter for He + Ion irradiation treatment, in which the He generated by the ion implanter + The energy of the ion beam is 35 keV, He + The ion dose is 1×10 12 ions / cm 2 , obtaining a first electron transport layer with a thickness of 18 nm;

[0124] Spin coating a ZnO ethanol solution with a concentration of 20 mg / mL on the first electron transport layer at a spin coating speed of 4000 rpm for 30 seconds, and annealing at 80° C. for 8 minutes to obtain a second electron transport layer with a thickness of 18 nm;

[0125] Spin coating CdZnSe blue light quantum dots with a concentration of 10 mg / mL on the second electron transport layer at a spin coating speed of 1500 rpm for 30 s, and annealing at 100° C. for 5 min to obtain a light-emitting layer;

[0126] Spin coating the TFB material with a concentration of 6.5 mg / mL on the light-emitting layer at a speed of 3000 rpm for 30 seconds, and annealing at 120° C. for 20 minutes to obtain a hole transport layer with a thickness of 20 nm;

[0127] Spin coating a PEDOT:PSS material with a mass concentration of 2.8% on the hole transport layer at a spin coating speed of 3000 rpm for 30 seconds, and annealing at 150° C. for 20 minutes to obtain a hole injection layer with a thickness of 20 nm;

[0128] Depositing Ag material on the hole injection layer at a rate of 1 angstrom / second for 100 seconds to obtain an anode with a thickness of 100 nm;

[0129] Packaging to obtain optoelectronic devices.

[0130] Example 3

[0131] This embodiment is basically the same as Embodiment 1, except that in this embodiment, He + The ion dose is 1×10 14 ions / cm 2 .

[0132] Example 4

[0133] This embodiment is basically the same as Embodiment 1, except that in this embodiment, He + The ion dose is 1×10 16 ions / cm 15 .

[0134] Example 5

[0135] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the He generated by the ion implanter + The energy of the ion beam is 15 keV.

[0136] Example 6

[0137] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the He generated by the ion implanter + The energy of the ion beam is 55 keV.

[0138] Example 7

[0139] This embodiment is basically the same as Embodiment 1, except that in this embodiment, Ar + Ion irradiation treatment replaces He in Example 1 + Ion irradiation treatment.

[0140] Example 8

[0141] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, an ethanol solution of ZnO doped with Mg is used to replace the ethanol solution of ZnO in Embodiment 1.

[0142] Example 9

[0143] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, when preparing the second electron transport layer, an ethanol solution of Mg-doped ZnO is used to replace the ethanol solution of ZnO in Embodiment 1.

[0144] Example 10

[0145] This embodiment is basically the same as Embodiment 1, except that in this embodiment, SnO 2 The ethanol solution of ZnO in Example 1 was replaced by the ethanol solution of

[0146] Embodiment 11

[0147] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the ethanol solution of ZnO in Embodiment 1 is replaced by the ethanol solution of GaP.

[0148] Example 12

[0149] Providing a substrate having an ITO anode with a thickness of 80 nm, ultrasonically cleaning the ITO-coated substrate with acetone and ethanol for 15 minutes, then cleaning it again with deionized water, then drying it on a hot plate at 150° C. for 10 minutes, and finally irradiating it with ultraviolet light for 20 minutes to improve the work function and surface energy of ITO;

[0150] In a glove box, spin-coat a PEDOT:PSS material with a mass concentration of 2.8% on the anode at a spin-coating speed of 3000 rpm for 30 seconds and anneal at 150° C. for 20 minutes to obtain a hole injection layer with a thickness of 20 nm;

[0151] A NiO material with a concentration of 6.5 mg / mL was spin-coated on the hole injection layer at a speed of 4500 rpm for 40 seconds and annealed at 120° C. for 10 minutes to obtain a dry film. The dry film was placed in an ion implanter for He + Ion irradiation treatment, in which the He generated by the ion implanter + The energy of the ion beam is 35 keV, He + The ion dose is 1×10 12 ions / cm 2 , obtaining a first hole transport layer with a thickness of 10 nm;

[0152] Spin-coat a NiO material with a concentration of 6.5 mg / mL on the first hole transport layer at a spin-coating speed of 4500 rpm for 40 seconds, and anneal at 120° C. for 10 minutes to obtain a second hole transport layer with a thickness of 10 nm;

[0153] Spin coating CdZnSe blue light quantum dots with a concentration of 10 mg / mL on the second hole transport layer at a spin coating speed of 1500 rpm for 30 seconds, and annealing at 100° C. for 5 minutes to obtain a light-emitting layer;

[0154] Spin-coat the light-emitting layer with a concentration of 20 mg / mL of PCBM (fullerene derivative) at a speed of 3500 rpm for 30 s, and anneal at 80° C. for 15 min to obtain an electron transport layer with a thickness of 36 nm;

[0155] Vapor depositing Al material on the electron transport layer at a rate of 1 angstrom / second for 100 seconds to obtain a cathode with a thickness of 100 nm;

[0156] Encapsulation is performed to obtain an optoelectronic device.

[0157] Comparative Example 1

[0158] This comparative example is substantially the same as Example 1, except that, in this comparative example, no ion irradiation treatment is performed during the preparation of the first electron transport layer.

[0159] Comparative Examples 2 to 5

[0160] This comparative example is substantially the same as Examples 8 to 11, except that, in this comparative example, no ion irradiation treatment is performed during the preparation of the first electron transport layer.

[0161] Comparative Example 6

[0162] This comparative example is basically the same as Example 12, except that, in this comparative example, ion irradiation treatment is not performed when the first hole transport layer is prepared.

[0163] The photoelectric devices of Examples 1, 2, 10 to 12 and Comparative Examples 1, 4 to 6 were tested by JVL data. Figures 9-10 ,in, Fig. 9 is a current density-external quantum efficiency curve of the optoelectronic devices of Examples 1, 2, 10 to 12 and Comparative Examples 1, 4 to 6, Fig.10 The voltage-current density curves of the photovoltaic devices of Examples 1, 2, 10-12 and Comparative Examples 1, 4-6 are shown.

[0164] Depend on Fig. 9 It can be seen that at the same current density, the external quantum efficiency of the optoelectronic devices of Examples 1 to 2 is higher than the external quantum efficiency of the optoelectronic device of Comparative Example 1. Fig.10It can be seen that, at the same voltage, the current density of the optoelectronic devices of Examples 1 to 2 is higher than that of the optoelectronic device of Comparative Example 1. In other words, at the same voltage, the external quantum efficiency of the optoelectronic devices of Examples 1 to 2 is higher than that of the optoelectronic device of Comparative Example 1. It can be seen that the optoelectronic device prepared by the preparation method of the present application can have a higher luminous efficiency.

[0165] Depend on Fig. 9 It can be seen that at the same current density, the external quantum efficiency of the optoelectronic device of Example 10 is higher than the external quantum efficiency of the optoelectronic device of Comparative Example 4. Fig.10 It can be seen that, at the same voltage, the current density of the optoelectronic device of Example 10 is higher than that of the optoelectronic device of Comparative Example 4. In other words, at the same voltage, the external quantum efficiency of the optoelectronic device of Example 10 is higher than that of the optoelectronic device of Comparative Example 4. It can be seen that the optoelectronic device prepared by the preparation method of the present application can have a higher luminous efficiency.

[0166] Depend on Fig. 9 It can be seen that at the same current density, the external quantum efficiency of the optoelectronic device of Example 11 is higher than the external quantum efficiency of the optoelectronic device of Comparative Example 5. Fig.10 It can be seen that, at the same voltage, the current density of the optoelectronic device of Example 11 is higher than that of the optoelectronic device of Comparative Example 5. In other words, at the same voltage, the external quantum efficiency of the optoelectronic device of Example 11 is higher than that of the optoelectronic device of Comparative Example 5. It can be seen that the optoelectronic device prepared by the preparation method of the present application can have a higher luminous efficiency.

[0167] Depend on Fig. 9 It can be seen that at the same current density, the external quantum efficiency of the optoelectronic device of Example 12 is higher than the external quantum efficiency of the optoelectronic device of Comparative Example 6. Fig.10 It can be seen that, at the same voltage, the current density of the optoelectronic device of Example 12 is higher than that of the optoelectronic device of Comparative Example 6. In other words, at the same voltage, the external quantum efficiency of the optoelectronic device of Example 12 is higher than that of the optoelectronic device of Comparative Example 6. It can be seen that the optoelectronic device prepared by the preparation method of the present application can have a higher luminous efficiency.

[0168] The maximum brightness L, lifespan T95 and lifespan T95@1000nit tests were performed on the optoelectronic devices of Examples 1 to 12 and Comparative Examples 1 to 6. The test results are shown in Table 1.

[0169] The test method for the maximum brightness L is: using FSD FPD optical property measurement equipment, controlling the efficiency test system built by QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabView, to measure the maximum brightness.

[0170] The test method for life span T95 and life span T95@1000nit is: in CDA gas, under constant current or voltage drive, measure the time taken for the device brightness to decay to a certain proportion of the maximum brightness, and the time taken for the brightness to decay to 95% of the maximum brightness is defined as T95, and this life span is the measured life span. In order to shorten the life span test cycle, the device life span test is usually carried out at high brightness by accelerating device aging, and the life span at low brightness is obtained by fitting the decay fitting formula. For example, the life span at 1000nits is recorded as T95@1000nits, and the calculation formula is:

[0171]

[0172] Among them, T95 L The lifespan under low brightness, generally 1000nits, T95 H is the lifespan under high brightness, that is, the measured lifespan, L H is the maximum brightness that the device is accelerated to, L L Generally, it is 1000nits, A is the acceleration factor, which is 1.7. The constant current is 1mA.

[0173] Table 1:

[0174] <![CDATA[L(cd / m 2 )]]> T95(h) T95@1000nit(h) Example 1 6589 6.04 123.35 Example 2 6354 5.87 113.11 Example 3 6925 6.67 147.50 Example 4 5640 4.91 78.19 Example 5 5483 4.80 73.06 Example 6 5367 4.69 68.98 Example 7 6150 5.59 102.24 Example 8 5994 5.35 93.91 Example 9 5831 5.08 85.32 Example 10 5240 4.56 64.55 Embodiment 11 4683 3.26 38.55 Example 12 4489 2.94 32.49 Comparative Example 1 5149 4.14 56.98 Comparative Example 2 5124 4.03 55.04 Comparative Example 3 5004 3.95 51.94 Comparative Example 4 4963 3.83 49.70 Comparative Example 5 4534 3.18 35.71 Comparative Example 6 4334 2.68 28.00

[0175] From Table 1 we can see that:

[0176] Compared with the optoelectronic devices of comparative examples 1 to 3, the optoelectronic devices of embodiments 1 to 9 have higher brightness and longer life. The reason may be that the first electron transport layer of the optoelectronic devices of embodiments 1 to 9 is prepared by ion irradiation treatment. The ion irradiation treatment can increase the surface defects of the first electron transport layer and increase the interface defects between the first electron transport layer and the second electron transport layer, thereby hindering electron migration and reducing the electron mobility of the optoelectronic device. The injection of electrons and holes in the light-emitting layer of the optoelectronic device is more balanced, and the negative effects such as exciton quenching and efficiency roll-off caused by excess electrons in the light-emitting layer are reduced.

[0177] Compared with the optoelectronic device of comparative example 4, the optoelectronic device of embodiment 10 has higher brightness and longer life. The reason may be that the first electron transport layer of the optoelectronic device of embodiment 10 is prepared by ion irradiation treatment. The ion irradiation treatment can increase the surface defects of the first electron transport layer and increase the interface defects between the first electron transport layer and the second electron transport layer, thereby hindering electron migration and reducing the electron mobility of the optoelectronic device. The injection of electrons and holes in the light-emitting layer of the optoelectronic device is more balanced, and the negative effects such as exciton quenching and efficiency roll-off caused by excess electrons in the light-emitting layer are reduced.

[0178] Compared with the optoelectronic device of comparative example 5, the optoelectronic device of example 11 has higher brightness and longer life. The reason may be that the first electron transport layer of the optoelectronic device of example 11 is prepared by ion irradiation treatment. The ion irradiation treatment can increase the surface defects of the first electron transport layer and increase the interface defects between the first electron transport layer and the second electron transport layer, thereby hindering electron migration and reducing the electron mobility of the optoelectronic device. The injection of electrons and holes in the light-emitting layer of the optoelectronic device is more balanced, and the negative effects such as exciton quenching and efficiency roll-off caused by excess electrons in the light-emitting layer are reduced.

[0179] Compared with the optoelectronic device of comparative example 6, the optoelectronic device of example 12 has higher brightness and longer life. The reason may be that the first hole transport layer of the optoelectronic device of example 12 is prepared by ion irradiation treatment. The ion irradiation treatment can increase the surface defects of the first hole transport layer and increase the interface defects between the first hole transport layer and the second hole transport layer, thereby hindering electron migration and reducing the electron mobility of the optoelectronic device. The injection of electrons and holes in the light-emitting layer of the optoelectronic device is more balanced, and the negative effects such as exciton quenching and efficiency roll-off caused by excess electrons in the light-emitting layer are reduced.

[0180] The above is a detailed introduction to the preparation method of the optoelectronic device, the optoelectronic device and the display device provided in the embodiments of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for preparing a photoelectric device, characterized in that: The steps include: Providing a photovoltaic device preform, wherein the photovoltaic device preform comprises a first electrode; Disposing first inorganic semiconductor particles on the optoelectronic device preform to form a dry film, and subjecting the dry film to ion irradiation treatment to obtain a first carrier functional layer; Disposing second inorganic semiconductor particles on the first carrier functional layer to obtain a second carrier functional layer; A second electrode is formed on the second carrier functional layer to obtain a photoelectric device.

2. The preparation method according to claim 1, characterized in that The optoelectronic device preform further includes a light-emitting layer stacked on the first electrode; or The forming of the second electrode on the second carrier functional layer includes: forming a stacked light emitting layer and a second electrode on the second carrier functional layer.

3. The preparation method according to claim 1, characterized in that: The ions used in the ion irradiation treatment include He + ,Ar + , Kr + 、Xe + 、Ne + and N + One or more of .

4. The preparation method according to claim 1, characterized in that: The energy of the ion beam used in the ion irradiation treatment is 15 to 55 keV; and / or The ion dose used in the ion irradiation treatment is 1×10 12 ~1×10 16 ions / cm 2 ; and / or The thickness of the first carrier functional layer and the thickness of the second carrier functional layer are independently 14 to 20 nm.

5. The preparation method according to claim 1, characterized in that: The step of arranging the first inorganic semiconductor particles on the optoelectronic device preform comprises: providing first inorganic semiconductor particles and a first solvent, mixing them to obtain a first dispersion, arranging the first dispersion on the optoelectronic device preform to form a first liquid film, annealing the first liquid film to obtain a dry film, and ion irradiating the dry film to obtain a first carrier functional layer; and / or The step of disposing the second inorganic semiconductor particles on the first carrier functional layer comprises: providing second inorganic semiconductor particles and a second solvent, mixing them to obtain a second dispersion, disposing the second dispersion on the first carrier functional layer to form a second liquid film, and annealing the second liquid film to obtain a second carrier functional layer.

6. The preparation method according to claim 1, characterized in that: The first carrier functional layer is a first electronic functional layer, the second carrier functional layer is a second electronic functional layer, the first inorganic semiconductor particles and the second inorganic semiconductor particles each independently include a first doped metal oxide particle, a first non-doped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material, the material of the first non-doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal in the first doped metal oxide particle The oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3, the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS, the IIIA-VA semiconductor material includes one or more of InP and GaP, and the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS; or The first carrier functional layer is a first hole functional layer, the second carrier functional layer is a second hole functional layer, the first inorganic semiconductor particles and the second inorganic semiconductor particles each independently include second doped metal oxide particles, second undoped metal oxide particles, one or more of metal sulfides and metal nitrides, wherein the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, and the metal nitride includes P-type gallium nitride.

7. The preparation method according to claim 5, characterized in that: In the first dispersion, the concentration of the first inorganic semiconductor particles is 10 to 30 mg / ml; and / or In the second dispersion, the concentration of the second inorganic semiconductor particles is 10 to 30 mg / ml; and / or The temperature of annealing the first liquid film is 75-85° C. and the time is 5-10 min; and / or The temperature of annealing the second liquid film is 75-85° C. and the time is 5-10 min; and / or The first solvent and the second solvent independently include one or more of isopropanol, ethanol, dimethyl sulfoxide, N-methylpyrrolidone and chlorobenzene.

8. The preparation method according to claim 6, characterized in that: The first carrier functional layer is a first electron functional layer, the second carrier functional layer is a second electron functional layer, and the optoelectronic device preform further comprises a third hole functional layer and a light-emitting layer stacked on the first electrode; or The first carrier functional layer is a first electron functional layer, the second carrier functional layer is a second electron functional layer, and the forming of the second electrode on the second carrier functional layer comprises: forming a stacked light-emitting layer, a third hole functional layer and a second electrode on the second carrier functional layer; or The first carrier functional layer is a first hole functional layer, the second carrier functional layer is a second hole functional layer, and the optoelectronic device preform further comprises a third electronic functional layer and a light-emitting layer stacked on the first electrode; or The first carrier functional layer is a first hole functional layer, the second carrier functional layer is a second hole functional layer, and forming a second electrode on the second carrier functional layer includes: forming a stacked light-emitting layer, a third electronic functional layer and a second electrode on the second carrier functional layer.

9. The preparation method according to claim 8, characterized in that: The first electrode and the second electrode each independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal single substance electrode or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / A g / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes Au:Mg alloy electrode or Ag:Mg alloy electrode; and / or The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonds of BN, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or The material of the third hole functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)- phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly [2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives , poly (9,9-octylfluorene) and its derivatives, poly (spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives, 4,4',4'-tris (N-3-methylphenyl-N-phenylamino) triphenylamine, tetracyanoquinodimethane, doped graphene, undoped graphene, C60, copper phthalocyanine, the second doped metal oxide particles, the second undoped metal oxide particles, the metal sulfide and the metal nitride one or more; and / or The material of the third electronic functional layer includes one or more of inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional materials include one or more of the first doped metal oxide particles, the first undoped metal oxide particles, the IIB-VIA semiconductor materials, the IIIA-VA semiconductor materials and the IB-IIIA-VIA semiconductor materials. The organic electronic functional materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds and fullerene derivatives.

10. A photoelectric device, characterized in that: The photoelectric device is prepared by the preparation method according to any one of claims 1 to 9.

11. A display device, characterized in that: The display device comprises the optoelectronic device according to claim 10.

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