Phase shifter and antenna

Abstract

The present disclosure provides a phase shifter and an antenna, and belongs to the technical field of communication. The phase shifter of the present disclosure comprises a first dielectric substrate and a second dielectric substrate arranged oppositely, an adjustable dielectric layer arranged between the first dielectric substrate and the second dielectric substrate, a first electrode layer arranged on the side of the first dielectric substrate close to the adjustable dielectric layer, a second electrode layer arranged on the side of the second dielectric substrate close to the adjustable dielectric layer, and a third electrode layer arranged on the side of the first dielectric substrate away from the adjustable dielectric layer; wherein one of the first electrode layer and the second electrode layer comprises a signal electrode for transmitting electromagnetic waves; the third electrode layer has a first opening, and the first opening and the signal electrode overlap partially in orthographic projection on the first dielectric substrate.

Description

Technical Field

[0001] This disclosure belongs to the field of communication technology, specifically relating to a phase shifter and an antenna. Background Technology

[0002] A phased array antenna is an antenna that changes its radiation pattern shape by controlling the feed phase of the radiating elements in the array. By controlling the phase, the direction of the maximum radiation value of the antenna pattern is changed, thereby achieving beam scanning. Due to its beam scanning characteristics, phased array antennas are widely used in fields such as communication and detection.

[0003] Phased array antenna architectures are divided into two categories: active phased arrays and passive phased arrays. Currently, phased array antennas based on liquid crystal technology are essentially typical passive phased arrays, representing a highly mature, low-cost, and low-power phased array architecture. Liquid crystal phased array antennas utilize the dielectric anisotropy of liquid crystals, providing deflection voltages to the upper and lower parts of the liquid crystal layer via transmission lines. Controlling the deflection direction of the liquid crystals changes the phase shift of the phase shifter, thereby adjusting the beam direction of the phased array antenna.

[0004] Phase shifters used in liquid crystal phased array antennas are mainly divided into two categories: the first type uses liquid crystal as the main transmission line medium, directly changing the phase constant and wave velocity of the electromagnetic wave transmitted on the transmission line by adjusting the dielectric constant of the liquid crystal, thus achieving phase shifting; the second type uses liquid crystal capacitors as variable capacitive loading for the transmission line trunk / branch, amplifying the influence of the liquid crystal dielectric constant on the phase constant by creating appropriate capacitor-inductor resonance, thus achieving narrower-bandgap phase shift amplification. Compared to the first type of liquid crystal phase shifter, the second type usually has advantages such as larger phase shift per unit space, no reliance on high cell thickness, and higher energy efficiency. Correspondingly, based on its principle, it also has disadvantages such as narrower bandwidth, slightly worse linearity, and low impedance due to resonant branch loading. Typically, in scenarios where the impedance relative to bandwidth requirement is ≤15%-18%, the second type of liquid crystal phase shifter has an absolute advantage; however, under the influence of the principle that the resonant branch is designed with strong capacitance and the main impedance of the device in the operating frequency band, introducing an impedance matching section will make broadband characteristics almost impossible to obtain.

[0005] The second approach to broadbanding liquid crystal phase shifters typically involves increasing the impedance after resonant loading, i.e., increasing the equivalent inductance of the main circuit of the phase shifter while decreasing the equivalent capacitance of the branches. For liquid crystal phase shifters that achieve phase shifting based on branch capacitance modulation, reducing the branch equivalent capacitance is significantly contrary to increasing the device quality factor (phase shift / insertion loss, hereinafter referred to as FOM). Both qualitative and quantitative analyses have demonstrated that reducing the branch capacitance has a greater impact on FOM than increasing the main circuit inductance (a narrower main circuit width). A qualitative explanation is provided here: considering both methods with broadband matching to Z0, the main circuit inductance L... 干The increase only affects the ohmic loss in the main circuit (which accounts for a very small percentage of the overall insertion loss), while the phase shift is directly related to the branch capacitance C. 支 They are directly proportional, with the changes manifesting as a local increase in insertion loss and a global decrease in phase shift, respectively. Considering the relationship between the two and the impedance, the phase shifter impedance (analog filter Bloch impedance) Z0 = sqrt(L 干 / C 支 As can be seen, the result of L becoming twice and C decreasing to half is consistent. Obviously, the impact of a very small increase in insertion loss on FOM is still not comparable to the effect of a phase shift decrease.

[0006] In the process of increasing the capacitance of the trunk line through broadbanding, it may be necessary to avoid problems such as the trunk line being too narrow, for example, reaching a width of less than 100um, resulting in insufficient process tolerance. At the same time, in practical engineering applications, even if the impact of the ohmic loss of the fine line is smaller than the impact of the reduction in branch capacitance, it still has a real impact on the competitiveness of product design. Summary of the Invention

[0007] The present invention aims to solve at least one of the technical problems existing in the prior art, and to provide a phase shifter and antenna.

[0008] In a first aspect, embodiments of this disclosure provide a phase shifter, comprising a first dielectric substrate and a second dielectric substrate disposed opposite to each other, an adjustable dielectric layer disposed between the first dielectric substrate and the second dielectric substrate, a first electrode layer disposed on the first dielectric substrate near the adjustable dielectric layer, a second electrode layer disposed on the second dielectric substrate near the adjustable dielectric layer, and a third electrode layer located on the first dielectric substrate away from the adjustable dielectric layer; wherein...

[0009] One of the first electrode layer and the second electrode layer includes a signal electrode for transmitting electromagnetic waves;

[0010] The third electrode layer has a first opening, and the first opening overlaps with the orthographic projection of the signal electrode onto the first dielectric substrate.

[0011] Wherein, when the first electrode layer includes a signal electrode, the second electrode layer includes: a first reference electrode and a second reference electrode; the first electrode layer further includes: at least one first branch and at least one second branch respectively connected to both sides of the extending direction of the signal electrode; the orthographic projection of the signal electrode on the first dielectric substrate is located between the orthographic projections of the first reference electrode and the second reference electrode on the first dielectric substrate; the first branch and the orthographic projection of the first reference electrode on the first dielectric substrate at least partially overlap; the orthographic projection of the second branch on the first dielectric substrate at least partially overlap.

[0012] Wherein, when the second electrode layer includes a signal electrode, the first electrode layer includes: a first reference electrode and a second reference electrode; the second electrode layer further includes: at least one first branch and at least one second branch respectively connected to both sides of the extending direction of the signal electrode; the orthographic projection of the signal electrode on the first dielectric substrate is located between the orthographic projections of the first reference electrode and the second reference electrode on the first dielectric substrate; the first branch and the orthographic projection of the first reference electrode on the first dielectric substrate at least partially overlap; the orthographic projection of the second branch on the first dielectric substrate at least partially overlap.

[0013] Wherein, the first branch includes a first portion and a second portion, the second portion overlapping the orthographic projection of the first reference electrode on the first dielectric substrate; the third electrode layer further has a second opening, the first portion overlapping the orthographic projection of the second opening on the first dielectric substrate; and / or,

[0014] The second branch includes a third portion and a fourth portion, the fourth portion overlapping the orthographic projection of the second reference electrode on the first dielectric substrate; the third electrode layer also has a third opening, the third portion overlapping the orthographic projection of the third opening on the first dielectric substrate.

[0015] Wherein, when the third electrode layer has the second opening, the second opening is connected to the first opening; when the third electrode layer has the third opening, the third opening is connected to the first opening.

[0016] Wherein, when the third electrode layer has the second opening, the centerline of the first portion along its extension direction coincides with the centerline of the second opening along its extension direction; when the third electrode layer has the third opening, the centerline of the third portion along its extension direction coincides with the centerline of the third opening along its extension direction.

[0017] The centerline of the signal electrode along its extension direction coincides with the centerline of the first opening along its extension direction.

[0018] There are multiple first branches and multiple second branches, and the first branches and the second branches are set in a one-to-one correspondence.

[0019] The first reference electrode and the second reference electrode are both configured to be subjected to the same voltage as the third electrode layer.

[0020] Wherein, when the first electrode layer includes a signal electrode, the second electrode layer includes a plurality of patch electrodes arranged side by side along the extension direction of the signal electrode, and each patch electrode overlaps with the orthographic projection of the signal electrode on the first dielectric substrate.

[0021] The centerline of the signal electrode along its extension direction coincides with the centerline of the first opening along its extension direction.

[0022] Wherein, when the first electrode layer includes a signal electrode, the second electrode layer includes a plurality of patch electrodes arranged side by side along the extension direction of the signal electrode; the signal electrode includes a first sub-signal electrode and a second sub-signal electrode arranged side by side, and the two ends of each patch electrode overlap with the orthographic projections of the first sub-signal electrode and the second sub-signal electrode on the first dielectric substrate, respectively;

[0023] The first opening includes a first sub-opening and a second sub-opening, wherein the first sub-signal electrode overlaps with the orthographic projection portion of the first sub-opening on the first dielectric substrate; and the second sub-signal electrode overlaps with the orthographic projection portion of the second sub-opening on the first dielectric substrate.

[0024] Wherein, the centerline of the first sub-signal electrode along its extension direction coincides with the centerline of the first sub-opening along its extension direction, and / or, the centerline of the second sub-signal electrode along its extension direction coincides with the centerline of the second sub-opening along its extension direction.

[0025] The thickness of the adjustable dielectric layer is not less than 1 / 10 μm.

[0026] The materials of the first conductive layer and the second conductive layer include at least one of molybdenum, aluminum, and copper.

[0027] The material of the third conductive layer includes at least one of copper, silver, and gold.

[0028] The material of the tunable dielectric layer includes liquid crystal molecules.

[0029] Secondly, embodiments of this disclosure provide an antenna that includes any of the phase shifters described above.

[0030] The antenna further includes a radiating element, and the phase shifter is electrically connected to the radiating element.

[0031] The antenna further includes a feeding unit, which is electrically connected to the radiating unit through the phase shifting unit. Attached Figure Description

[0032] Figure 1 This is a top view of a phase shifter, representing a first example of an embodiment of this disclosure.

[0033] Figure 2 for Figure 1 A cross-sectional view of AA'.

[0034] Figure 3 This is a top view of the third electrode layer of a phase shifter, which is a first example of an embodiment of this disclosure.

[0035] Figure 4 This is a top view of a phase shifter, representing a second example of an embodiment of this disclosure.

[0036] Figure 5 for Figure 4 A cross-sectional view of BB'.

[0037] Figure 6 This is a top view of a phase shifter, representing a third example of an embodiment of this disclosure.

[0038] Figure 7 for Figure 6 A cross-sectional view of CC'.

[0039] Figure 8 This is a top view of the third electrode layer of a phase shifter, representing a third example of an embodiment of this disclosure.

[0040] Figure 9 This is a top view of a phase shifter, representing a fourth example of an embodiment of this disclosure.

[0041] Figure 10 for Figure 9 Cross-sectional view of DD'.

[0042] Figure 11 This is a top view of a phase shifter, representing a fifth example of an embodiment of this disclosure.

[0043] Figure 12 for Figure 11 A cross-sectional view of EE'.

[0044] Figure 13 This is a top view of the third electrode layer of a phase shifter, which is a fifth example of an embodiment of this disclosure. Detailed Implementation

[0045] To enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0046] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an,” “a,” or “the,” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “including,” “comprising,” or “containing,” and similar terms mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. The terms “connected,” “linked,” or similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” and “right,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0047] Before describing the phase shifter in the embodiments of this disclosure, it should be noted that the phase shifter in this disclosure is only a liquid crystal phase shifter, that is, the material of the tunable dielectric layer in the phase shifter includes liquid crystal molecules or composite materials containing liquid crystal molecules. The tunable dielectric layer will be referred to as the liquid crystal layer below. However, it should be understood that the material of the tunable dielectric layer is not limited to liquid crystal molecules or composite materials containing liquid crystal molecules. Any medium whose dielectric constant can change under the action of an electric field is within the protection scope of the embodiments of this disclosure.

[0048] In a first aspect, embodiments of this disclosure provide a phase shifter, comprising a first dielectric substrate, a second dielectric substrate, a liquid crystal layer, a first electrode layer, a second electrode layer, and a third electrode layer. The first and second dielectric substrates are disposed opposite to each other, with the liquid crystal layer located between them. The first electrode layer is disposed on the side of the first dielectric substrate closest to the liquid crystal layer, the second electrode layer is disposed on the side of the second dielectric substrate closest to the liquid crystal layer, and the third electrode layer is disposed on the side of the first dielectric substrate opposite to the liquid crystal layer. At least the overlapping region of the first and second electrode layers contains the liquid crystal layer. Thus, by applying a bias voltage to the first and second electrode layers, an electric field is generated in their overlapping region, thereby changing the dielectric constant of the liquid crystal layer and consequently altering the phase of the transmitted electromagnetic wave.

[0049] In particular, in the embodiments of this disclosure, one of the first electrode layer and the second electrode layer includes a signal electrode for transmitting electromagnetic waves, i.e., the trunk line, and a first opening is formed in the third conductive layer accordingly. The signal electrode overlaps with the orthographic projection portion of the first opening on the first dielectric substrate.

[0050] It should be noted that the third electrode layer can be a radio frequency ground layer, meaning the voltage applied to the third electrode layer is ground voltage. However, it should be understood that the voltage applied to the third electrode layer can also be other reference voltages, as long as they can form a current loop with the first and second electrode layers.

[0051] In this embodiment, since the signal electrode overlaps with the orthographic projection of the first opening on the first dielectric substrate, the capacitance from the signal electrode to the third electrode layer can be reduced, the inductance can be enhanced, and the impedance of the phase shifter can be increased, thereby achieving broadband of the phase shifter.

[0052] In this embodiment of the disclosure, the signal electrode can be disposed in the first electrode layer or in the second electrode layer. To make the structure of the phase shifter in this embodiment of the disclosure clearer, the following description is provided in conjunction with specific examples.

[0053] First example: Figure 1 This is a top view of a phase shifter according to a first example of an embodiment of this disclosure; Figure 2 for Figure 1 A cross-sectional view of AA'; Figure 3 This is a top view of the third electrode layer 12 of the phase shifter in a first example of an embodiment of this disclosure; as shown Figure 1-3As shown, the phase shifter includes a first dielectric substrate 10, a second dielectric substrate 20, a liquid crystal layer 30, a first electrode layer 11, a second electrode layer 21, and a third electrode layer 12. The first dielectric substrate 10 and the second dielectric substrate 20 are disposed opposite each other, and the liquid crystal layer 30 is located between the first dielectric substrate 10 and the second dielectric substrate 20. The first electrode layer 11 is disposed on the side of the first dielectric substrate 10 closest to the liquid crystal layer 30, the second electrode layer 21 is disposed on the side of the second dielectric substrate 20 closest to the liquid crystal layer 30, and the third electrode layer 12 is disposed on the side of the first dielectric substrate 10 away from the liquid crystal layer 30. The liquid crystal layer 30 is disposed at least in the overlapping region of the first electrode layer 11 and the second electrode layer 21. The first electrode layer 11 of the phase shifter includes a first reference electrode 111 and a second reference electrode 112, and the second electrode layer 21 includes a signal electrode 211 and a first branch 212 and a second branch 213 respectively connected to both sides of the extending direction of the signal electrode 211. The orthographic projection of signal electrode 211 on the first dielectric substrate 10 is located between the orthographic projections of first reference electrode 111 and second reference electrode 112 on the first dielectric substrate 10. First branch 212 at least partially overlaps with the orthographic projection of first reference electrode 111 on the first dielectric substrate 10, and second branch 213 at least partially overlaps with the orthographic projection of second reference electrode 112 on the first dielectric substrate 10. Signal electrode 211 serves as the main line of the first electrode layer 11 for transmitting electromagnetic waves. First branch 212 and second branch 213, as branches of the first electrode layer 11, respectively form overlapping capacitances with the first reference electrode 111 and the second reference electrode 112, used for phase shifting of the electromagnetic waves transmitted by the main line.

[0054] In this example, a first opening 121 is formed in the third electrode layer 12, and the first opening 121 overlaps with the orthographic projection of the signal electrode 211 onto the first dielectric substrate 10. For example, the first opening 121 is a rectangular groove, in which case the centerline of the first opening 121 along its extension direction coincides with the centerline of the signal electrode 211 along its extension direction. The signal electrode 211 serves as the trunk line, which can reduce the capacitance from the trunk line to the third electrode layer 12, enhance the inductance, and increase the impedance of the phase shifter, thereby achieving broadbanding of the phase shifter.

[0055] Of course, the shape of the first opening 121 can also be a non-rectangular groove. In this embodiment, the shape of the first opening 121 is not limited.

[0056] In some examples, the first reference electrode 111 and the second reference electrode 112 in the first electrode layer 11 can be ground electrodes. In this case, the first reference electrode 111 and the second reference electrode 112 can be electrically connected to the third electrode layer 12. This arrangement can reduce wiring and is easy to control. Specifically, the first reference electrode 111 and the second reference electrode 112 in the first electrode layer 11 can be electrically connected to the third electrode layer 12 through a via penetrating the first dielectric substrate 10.

[0057] In some examples, there are multiple first branches 212 and second branches 213 in the second electrode layer 21, with each first branch 212 and second branch 213 corresponding to the other. In the embodiments of this disclosure, the first branches 212 can be arranged periodically and electrically connected to the signal electrode 211, and similarly, the second branches 213 can also be arranged periodically and electrically connected to the signal electrode 211.

[0058] In some examples, both the first electrode layer 11 and the second electrode layer 21 can be single-layer films formed from any one of molybdenum, aluminum, and copper, or composite films formed from several of these materials. The first electrode layer 11 can be formed on the second dielectric substrate 20 by electroplating or sputtering. The second electrode layer 21 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0059] In some examples, the third electrode layer 12 can be a single-layer film formed of any one of copper, silver, and gold, or a composite film formed of several of them. The third electrode layer 12 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0060] Second example: Figure 4 This is a top view of a phase shifter according to a second example of an embodiment of this disclosure; Figure 5 for Figure 4 A cross-sectional view of BB'; as shown Figure 4 and 5As shown, the phase shifter in this example is largely the same as the first example, except that in this example, the first electrode layer 11 includes a signal electrode 211, with a first branch 212 and a second branch 213 respectively connected to both sides of the signal electrode 211's extension direction. The second electrode layer 21 includes a first reference electrode 111 and a second reference electrode 112. The orthographic projection of the signal electrode 211 on the first dielectric substrate 10 is located between the orthographic projections of the first reference electrode 111 and the second reference electrode 112 on the first dielectric substrate 10. The first branch 212 at least partially overlaps with the orthographic projection of the first reference electrode 111 on the first dielectric substrate 10, and the second branch 213 at least partially overlaps with the orthographic projection of the second reference electrode 112 on the first dielectric substrate 10. The signal electrode 211 serves as the main line of the first electrode layer 11 for transmitting electromagnetic waves, while the first branch 212 and the second branch 213, as branches of the first electrode layer 11, form overlapping capacitances with the first reference electrode 111 and the second reference electrode 112 respectively, for phase shifting of the electromagnetic waves transmitted by the main line.

[0061] In this example, a first opening 121 is formed in the third electrode layer 12, and the first opening 121 overlaps with the orthographic projection of the signal electrode 211 onto the first dielectric substrate 10. For example, the first opening 121 is a rectangular groove, in which case the centerline of the first opening 121 along its extension direction coincides with the centerline of the signal electrode 211 along its extension direction. The signal electrode 211 serves as the trunk line, which can reduce the capacitance from the trunk line to the third electrode layer 12, enhance the inductance, and increase the impedance of the phase shifter, thereby achieving broadbanding of the phase shifter.

[0062] Of course, the shape of the first opening 121 can also be a non-rectangular groove. In this embodiment, the shape of the first opening 121 is not limited.

[0063] In some examples, the first reference electrode 111 and the second reference electrode 112 in the second electrode layer 21 can be ground electrodes. In this case, the first reference electrode 111 and the second reference electrode 112 can be electrically connected to the third electrode layer 12. This arrangement reduces wiring and is easy to control. Specifically, the first reference electrode 111 and the second reference electrode 112 in the second electrode layer 21 can be electrically connected to a transfer electrode on the first dielectric substrate 10 through conductive gold balls. In this case, the transfer electrode is electrically connected to the third electrode layer 12 through a via penetrating the first dielectric substrate 10.

[0064] In some examples, there are multiple first branches 212 and second branches 213 in the first electrode layer 11, with each first branch 212 and second branch 213 corresponding to the other. In the embodiments of this disclosure, the first branches 212 can be arranged periodically and electrically connected to the signal electrode 211, and similarly, the second branches 213 can also be arranged periodically and electrically connected to the signal electrode 211.

[0065] In some examples, both the first electrode layer 11 and the second electrode layer 21 can be single-layer films formed from any one of molybdenum, aluminum, and copper, or composite films formed from several of these materials. The first electrode layer 11 can be formed on the first dielectric substrate 10 by electroplating or sputtering. The second electrode layer 21 can be formed on the second dielectric substrate 20 by electroplating or sputtering.

[0066] In some examples, the third electrode layer 12 can be a single-layer film formed of any one of copper, silver, and gold, or a composite film formed of several of them. The third electrode layer 12 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0067] The third example: Figure 6 This is a top view of a phase shifter according to a third example of an embodiment of this disclosure; Figure 7 for Figure 6 A cross-sectional view of CC'; Figure 8 This is a top view of the third electrode layer 12 of the phase shifter according to a third example of an embodiment of this disclosure; as shown Figure 6-8 As shown, the structure of this phase shifter is largely the same as that of the first and second examples. In this example, the second electrode layer 21 includes a signal electrode 211, a first branch 212, and a second branch 213, and the first electrode layer 11 includes a first reference electrode 111 and a second reference electrode 112. The orthographic projection of the signal electrode 211 on the first dielectric substrate 10 is located between the orthographic projections of the first reference electrode 111 and the second reference electrode 112 on the first dielectric substrate 10. The first branch 212 at least partially overlaps with the orthographic projection of the first reference electrode 111 on the first dielectric substrate 10, and the second branch 213 at least partially overlaps with the orthographic projection of the second reference electrode 112 on the first dielectric substrate 10. The signal electrode 211 serves as the main line of the first electrode layer 11 for transmitting electromagnetic waves. The first branch 212 and the second branch 213, as branches of the first electrode layer 11, form overlapping capacitances with the first reference electrode 111 and the second reference electrode 112 respectively, for phase shifting of the electromagnetic waves transmitted by the main line.

[0068] In this example, the first branch 212 includes a first portion and a second portion, the second portion overlapping the orthographic projection of the first reference electrode 111 onto the first dielectric substrate 10. The second branch 213 includes a third portion and a fourth portion, the fourth portion overlapping the orthographic projection of the second reference electrode 112 onto the first dielectric substrate 10. The third electrode layer 12 has a first opening 121, a second opening 122, and a third opening 123. The first opening 121 overlaps with the orthographic projection of the signal electrode 211 onto the first dielectric substrate 10. The second opening 122 corresponds one-to-one with the first portion of the first branch 212, and the corresponding second opening 122 and the first portion of the first branch 212 overlap on the orthographic projection of their respective portions onto the first dielectric substrate 10. The third opening 123 corresponds one-to-one with the third portion of the second branch 213, and the corresponding third opening 123 and the third portion of the second branch 213 overlap on the orthographic projection of their respective portions onto the first dielectric substrate 10.

[0069] In this example, signal electrode 211 serves as the main line, and the first branch 212 and the second branch 213 serve as branches. This not only reduces the capacitance from the main line to the third electrode layer 12, but also reduces the capacitance from the first branch 212 and the second branch 213 to the third electrode layer 12. The inductance is enhanced, the impedance of the phase shifter is increased, and thus the broadband of the phase shifter is achieved.

[0070] In some examples, both the second opening 122 and the third opening 123 are connected to the first opening 121. The first opening 121 overlaps with the orthographic projection of the signal electrode 211 onto the first dielectric substrate 10. For example, the first opening 121, the second opening 122, and the third opening 123 are all rectangular slots, in which case the centerline of the first opening 121 along its extension direction coincides with the centerline of the signal electrode 211 along its extension direction. Similarly, the centerline of the corresponding second opening 122 along its extension direction coincides with the orthographic projection of the centerline of the first branch 212 along its extension direction onto the first dielectric substrate 10, and the centerline of the corresponding third opening 123 along its extension direction coincides with the orthographic projection of the centerline of the second branch 213 along its extension direction onto the first dielectric substrate 10.

[0071] Of course, the shapes of the first opening 121, the second opening 122 and the third opening 123 can also be non-rectangular grooves. In this embodiment, the shape of the first opening 121 is not limited.

[0072] In some examples, the first reference electrode 111 and the second reference electrode 112 in the first electrode layer 11 can be ground electrodes. In this case, the first reference electrode 111 and the second reference electrode 112 can be electrically connected to the third electrode layer 12. This arrangement can reduce wiring and is easy to control. Specifically, the first reference electrode 111 and the second reference electrode 112 in the first electrode layer 11 can be electrically connected to the third electrode layer 12 through a via penetrating the first dielectric substrate 10.

[0073] In some examples, there are multiple first branches 212 and second branches 213 in the second electrode layer 21, with each first branch 212 and second branch 213 corresponding to the other. In the embodiments of this disclosure, the first branches 212 can be arranged periodically and electrically connected to the signal electrode 211, and similarly, the second branches 213 can also be arranged periodically and electrically connected to the signal electrode 211.

[0074] In some examples, both the first electrode layer 11 and the second electrode layer 21 can be single-layer films formed from any one of molybdenum, aluminum, and copper, or composite films formed from several of these materials. The first electrode layer 11 can be formed on the second dielectric substrate 20 by electroplating or sputtering. The second electrode layer 21 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0075] In some examples, the third electrode layer 12 can be a single-layer film formed of any one of copper, silver, and gold, or a composite film formed of several of them. The third electrode layer 12 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0076] The fourth example, Figure 9 This is a top view of a phase shifter according to a fourth example of an embodiment of this disclosure; Figure 10 for Figure 9 A cross-sectional view of DD'; as shown Figure 9 and 10As shown, in this example, the phase shifter includes a first dielectric substrate 10, a second dielectric substrate 20, a liquid crystal layer 30, a first electrode layer 11, a second electrode layer 21, and a third electrode layer 12. The first dielectric substrate 10 and the second dielectric substrate 20 are disposed opposite each other, the liquid crystal layer 30 is located between the first dielectric substrate 10 and the second dielectric substrate 20, the first electrode layer 11 is disposed on the side of the first dielectric substrate 10 near the liquid crystal layer 30, the second electrode layer 21 is disposed on the side of the second dielectric substrate 20 near the liquid crystal layer 30, and the third electrode layer 12 is disposed on the side of the first dielectric substrate 10 away from the liquid crystal layer 30. The liquid crystal layer 30 is disposed at least in the overlapping region of the first electrode layer 11 and the second electrode layer 21. The first electrode layer 11 of the phase shifter includes a signal electrode 211, and the second electrode layer 21 includes a plurality of patch electrodes 214 arranged side-by-side along the extending direction of the signal electrode 211. Each patch electrode 214 overlaps with the orthographic projection of the signal electrode 211 onto the first dielectric substrate 10, forming an overlap capacitance used to phase-shift the electromagnetic wave transmitted by the signal electrode 211. The third electrode layer 12 has a first opening 121, which overlaps with the orthographic projection of the signal electrode 211 onto the first dielectric substrate 10. For example, the first opening 121 can be a rectangular slot, where the centerline of the first opening 121 along its extension direction coincides with the centerline of the signal electrode 211 along its extension direction. Since the signal electrode 211 serves as the main line, this reduces the capacitance from the main line to the third electrode layer 12, strengthens the inductance, and increases the impedance of the phase shifter, thereby achieving broadband operation of the phase shifter.

[0077] Of course, the shape of the first opening 121 can also be a non-rectangular groove. In this embodiment, the shape of the first opening 121 is not limited.

[0078] In some examples, each surface mount electrode 214 can be electrically connected to a single bias voltage line, which reduces wiring and facilitates control. Alternatively, each electrode 214 can be connected to an independent bias voltage line, allowing for individual control of the surface mount electrode 214.

[0079] In some examples, both the first electrode layer 11 and the second electrode layer 21 can be single-layer films formed from any one of molybdenum, aluminum, and copper, or composite films formed from several of these materials. The first electrode layer 11 can be formed on the second dielectric substrate 20 by electroplating or sputtering. The second electrode layer 21 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0080] In some examples, the third electrode layer 12 can be a single-layer film formed of any one of copper, silver, and gold, or a composite film formed of several of them. The third electrode layer 12 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0081] Fifth example: Figure 11 This is a top view of a phase shifter according to a fifth example of an embodiment of this disclosure; Figure 12 for Figure 11 A cross-sectional view of EE'; Figure 13 This is a top view of the third electrode layer 12 of the phase shifter according to a fifth example of an embodiment of this disclosure; as shown Figure 11-13 As shown, in this example, the phase shifter includes a first dielectric substrate 10, a second dielectric substrate 20, a liquid crystal layer 30, a first electrode layer 11, a second electrode layer 21, and a third electrode layer 12. The first dielectric substrate 10 and the second dielectric substrate 20 are disposed opposite each other, and the liquid crystal layer 30 is located between the first dielectric substrate 10 and the second dielectric substrate 20. The first electrode layer 11 is disposed on the side of the first dielectric substrate 10 closest to the liquid crystal layer 30, the second electrode layer 21 is disposed on the side of the second dielectric substrate 20 closest to the liquid crystal layer 30, and the third electrode layer 12 is disposed on the side of the first dielectric substrate 10 away from the liquid crystal layer 30. The liquid crystal layer 30 is disposed at least in the overlapping region of the first electrode layer 11 and the second electrode layer 21. The first electrode layer 11 includes a signal electrode 211, which includes a first sub-signal electrode 2111 and a second sub-signal electrode 2112 arranged side-by-side. The second electrode layer 21 includes a plurality of patch electrodes 214 arranged side-by-side along the extending direction of the first sub-signal electrode 2111. Each patch electrode 214 has two ends that overlap with the orthographic projection of the first sub-signal electrode 2111 and the second sub-signal electrode 2112 on the first dielectric substrate 10, respectively, to form an overlap capacitor for phase shifting of the transmitted electromagnetic wave.

[0082] In this example, the third electrode layer 12 has a first opening 121, which includes a first sub-opening 1211 and a second sub-opening 1212. The first sub-opening 1211 and the second sub-opening 1212 are rectangular slots. The first sub-signal electrode 2111 overlaps with the orthographic projection portion of the first sub-opening 1211 on the first dielectric substrate 10; the second sub-signal electrode 2112 overlaps with the orthographic projection portion of the second sub-opening 1212 on the first dielectric substrate 10. This reduces the capacitance formed by the first sub-signal electrode 2111 and the third electrode layer 12, as well as the capacitance formed by the second sub-signal electrode 2112 and the third electrode layer 12, increasing inductance and raising the impedance of the phase shifter, thereby achieving broadband operation of the phase shifter.

[0083] In some examples, the centerline of the first sub-opening 1211 along its extension direction coincides with the orthographic projection of the centerline of the first sub-signal electrode 2111 along its extension direction onto the first dielectric substrate 10. The centerline of the second sub-opening 1212 along its extension direction coincides with the orthographic projection of the centerline of the second sub-signal electrode 2112 along its extension direction onto the first dielectric substrate 10.

[0084] In some examples, both the first electrode layer 11 and the second electrode layer 21 can be single-layer films formed from any one of molybdenum, aluminum, and copper, or composite films formed from several of these materials. The first electrode layer 11 can be formed on the second dielectric substrate 20 by electroplating or sputtering. The second electrode layer 21 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0085] In some examples, the third electrode layer 12 can be a single-layer film formed of any one of copper, silver, and gold, or a composite film formed of several of them. The third electrode layer 12 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0086] In any of the above examples, the thickness of the liquid crystal layer 30 is not less than 1 / 10 micrometer. The first dielectric substrate 10 and the second dielectric substrate 20 include, but are not limited to, glass, PCB, and flexible film materials.

[0087] The phase shifter provided in this embodiment reduces the capacitance formed between the signal electrode 211 and the phase shifter by designing an opening in the third electrode layer 12, thereby enabling the phase shifter to achieve an impedance bandwidth of 20% to 30% or more. Simultaneously, it facilitates the optimization of the FOM (Form Oscillator Memory) of the broadband phase shifter, reduces the risk of metal processing tolerances, and contributes to the miniaturization design of the device.

[0088] Secondly, embodiments of this disclosure provide an antenna including the aforementioned phase shifter and a radiating element connected to the phase shifter. The antenna also includes a feeding structure electrically connected to the radiating element via the phase shifter. The feeding structure feeds electromagnetic waves into the phase shifter, which adjusts the phase of the electromagnetic waves before they are radiated through the radiating element, thus altering the radiation pattern.

[0089] The antenna also includes a transceiver unit, an RF transceiver, a signal amplifier, a power amplifier, and a filtering unit. This antenna can function as either a transmitting or receiving antenna. The transceiver unit can include a baseband and a receiver. The baseband provides signals in at least one frequency band, such as 2G, 3G, 4G, or 5G signals, and transmits these signals to the RF transceiver. The transparent antenna in the communication system receives the signal, which is then processed by the filtering unit, power amplifier, signal amplifier, and RF transceiver (not shown in the diagram) before being transmitted to the receiver in the transceiver unit. The receiver could be, for example, a smart gateway.

[0090] Furthermore, the RF transceiver is connected to the transceiver unit and is used to modulate the signals transmitted by the transceiver unit, or to demodulate the signals received by the transparent antenna before transmitting them to the transceiver unit. Specifically, the RF transceiver may include a transmitting circuit, a receiving circuit, a modulation circuit, and a demodulation circuit. After the transmitting circuit receives various types of signals provided by the baseband, the modulation circuit can modulate the various types of signals provided by the baseband before transmitting them to the antenna. The transparent antenna receives the signals and transmits them to the receiving circuit of the RF transceiver. The receiving circuit then transmits the signals to the demodulation circuit, which demodulates the signals before transmitting them to the receiving end.

[0091] Furthermore, the RF transceiver is connected to a signal amplifier and a power amplifier, which are then connected to a filtering unit. The filtering unit is connected to at least one antenna. During signal transmission in the communication system, the signal amplifier improves the signal-to-noise ratio (SNR) of the RF transceiver's output signal before transmitting it to the filtering unit; the power amplifier amplifies the power of the RF transceiver's output signal before transmitting it to the filtering unit. The filtering unit may specifically include a duplexer and a filtering circuit. The filtering unit combines the signals output from the signal amplifier and power amplifier, filters out clutter, and transmits them to the transparent antenna, which radiates the signal. During signal reception in the communication system, the antenna receives the signal and transmits it to the filtering unit. The filtering unit filters out clutter from the received signal and transmits it to the signal amplifier and power amplifier. The signal amplifier increases the gain of the received signal, improving the SNR; the power amplifier amplifies the power of the received signal. The signal received by the antenna, after processing by the power amplifier and signal amplifier, is transmitted to the RF transceiver, which then transmits it to the transceiver unit.

[0092] In some examples, the signal amplifier may include various types of signal amplifiers, such as low-noise amplifiers, without limitation.

[0093] In some examples, the antenna provided in this disclosure also includes a power management unit connected to a power amplifier to provide voltage to the power amplifier for amplifying signals.

[0094] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A phase shifter comprising a first dielectric substrate and a second dielectric substrate disposed opposite to each other, an adjustable dielectric layer disposed between the first dielectric substrate and the second dielectric substrate, a first electrode layer disposed on the first dielectric substrate near the adjustable dielectric layer, a second electrode layer disposed on the second dielectric substrate near the adjustable dielectric layer, and a third electrode layer located on the first dielectric substrate away from the adjustable dielectric layer; wherein, One of the first electrode layer and the second electrode layer includes a signal electrode for transmitting electromagnetic waves; When the first electrode layer includes a signal electrode, the second electrode layer includes a first reference electrode and a second reference electrode; the first electrode layer further includes at least one first branch and at least one second branch respectively connected to both sides of the signal electrode's extension direction; the orthographic projection of the signal electrode on the first dielectric substrate is located between the orthographic projections of the first reference electrode and the second reference electrode on the first dielectric substrate; the first branch at least partially overlaps with the orthographic projection of the first reference electrode on the first dielectric substrate; the second branch at least partially overlaps with the orthographic projection of the second reference electrode on the first dielectric substrate; When the second electrode layer includes a signal electrode, the first electrode layer includes a first reference electrode and a second reference electrode; the second electrode layer further includes at least one first branch and at least one second branch respectively connected to both sides of the signal electrode's extension direction; the orthographic projection of the signal electrode on the first dielectric substrate is located between the orthographic projections of the first reference electrode and the second reference electrode on the first dielectric substrate; the first branch at least partially overlaps with the orthographic projection of the first reference electrode on the first dielectric substrate; the second branch at least partially overlaps with the orthographic projection of the second reference electrode on the first dielectric substrate; The first branch and the second branch form capacitors with the first reference electrode and the second reference electrode, respectively, and are configured to phase-shift the electromagnetic wave transmitted by the signal electrode; The third electrode layer has a first opening, and the orthographic projection of the first opening on the first dielectric substrate is located within the orthographic projection of the signal electrode on the first dielectric substrate; the centerline of the signal electrode along its extension direction coincides with the centerline of the first opening along its extension direction. The first opening can reduce the capacitance from the signal electrode to the third electrode layer and increase the impedance of the phase shifter to achieve broadband operation of the phase shifter.

2. The phase shifter of claim 1, wherein, The first branch includes a first part and a second part, wherein the second part overlaps with the orthographic projection of the first reference electrode on the first dielectric substrate; The third electrode layer also has a second opening, and the first portion overlaps with the orthographic projection portion of the second opening on the first dielectric substrate. And / or, The second branch includes a third part and a fourth part, wherein the fourth part overlaps with the orthographic projection of the second reference electrode on the first dielectric substrate; The third electrode layer also has a third opening, the third portion of which overlaps with the orthographic projection portion of the third opening on the first dielectric substrate.

3. The phase shifter according to claim 2, wherein, When the third electrode layer has the second opening, the second opening is connected to the first opening; when the third electrode layer has the third opening, the third opening is connected to the first opening.

4. The phase shifter according to claim 2, wherein, When the third electrode layer has the second opening, the centerline of the first portion along its extension direction coincides with the centerline of the second opening along its extension direction; when the third electrode layer has the third opening, the centerline of the third portion along its extension direction coincides with the centerline of the third opening along its extension direction.

5. The phase shifter according to claim 1, wherein, There are multiple first branches and multiple second branches, and the first branch and the second branch are set in a one-to-one correspondence.

6. The phase shifter according to claim 1, wherein, Both the first reference electrode and the second reference electrode are configured to be subjected to the same voltage as the third electrode layer.

7. The phase shifter according to claim 1, wherein, When the first electrode layer includes a signal electrode, the second electrode layer includes a plurality of patch electrodes arranged side by side along the extension direction of the signal electrode, and each patch electrode overlaps with the orthographic projection of the signal electrode on the first dielectric substrate.

8. The phase shifter according to claim 1, wherein, When the first electrode layer includes a signal electrode, the second electrode layer includes a plurality of patch electrodes arranged side by side along the extension direction of the signal electrode; the signal electrode includes a first sub-signal electrode and a second sub-signal electrode arranged side by side, and the two ends of each patch electrode overlap with the orthographic projections of the first sub-signal electrode and the second sub-signal electrode on the first dielectric substrate, respectively; The first opening includes a first sub-opening and a second sub-opening, wherein the first sub-signal electrode overlaps with the orthographic projection portion of the first sub-opening on the first dielectric substrate; and the second sub-signal electrode overlaps with the orthographic projection portion of the second sub-opening on the first dielectric substrate.

9. The phase shifter according to claim 8, wherein, The centerline of the first sub-signal electrode along its extension direction coincides with the centerline of the first sub-opening along its extension direction, and / or the centerline of the second sub-signal electrode along its extension direction coincides with the centerline of the second sub-opening along its extension direction.

10. The phase shifter according to claim 1, wherein, The thickness of the adjustable dielectric layer is not less than 1 / 10 μm.

11. The phase shifter according to claim 1, wherein, The materials of the first electrode layer and the second electrode layer include at least one of molybdenum, aluminum, and copper.

12. The phase shifter according to claim 1, wherein, The material of the third electrode layer includes at least one of copper, silver, and gold.

13. The phase shifter according to claim 1, wherein, The material of the tunable dielectric layer includes liquid crystal molecules.

14. An antenna comprising the phase shifter according to any one of claims 1-13.

15. The antenna according to claim 14, wherein, It also includes a radiation unit, and the phase shifter is electrically connected to the radiation unit.

16. The antenna according to claim 15, wherein, It also includes a power supply unit, which is electrically connected to the radiation unit via the phase shifter.

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