Narrow-linewidth microcavity semiconductor laser and narrow-linewidth laser generation method
By optimizing the external cavity structure and feedback elements in a narrow linewidth microcavity semiconductor laser, combined with a gain chip and filter, the generation of narrow linewidth laser is achieved, solving the problems of short photon life and phase matching, and improving the integration of the laser and linewidth compression effect.
CN119209197APending Publication Date: 2024-12-27INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Patent Information
- Application Number
- CN202411348728.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-26
- Publication Date
- 2024-12-27
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Figure CN119209197A_ABST
Abstract
The invention discloses a narrow-linewidth microcavity semiconductor laser and a narrow-linewidth laser generation method, and relates to the technical field of lasers. The invention provides a narrow-linewidth micro-cavity semiconductor laser, which comprises a gain chip used for outputting a multi-wavelength light beam; the collimating lens is used for regulating and controlling the multi-wavelength light beams into parallel light beams; the filter is used for filtering parallel light beams with preset wavelengths in the parallel light beams and outputting a first light beam; the F-P etalon is used for controlling parallel light beams with different wavelengths in the first light beam to generate periodic transmissivity change, so that the central wavelength of the first light beam is matched with the transmission wavelength of the F-P etalon, and a second light beam is output; wherein the line width of the second light beam is smaller than that of the first light beam, and the outer cavity is used for reflecting the second light beam for multiple times to increase the optical path length of the second light beam so as to compress the line width of the second light beam and output laser.
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