Wafer carrier apparatus, vapor deposition apparatus, and methods of use

Abstract

The application discloses a wafer bearing device, a vapor deposition equipment and a using method. The wafer bearing device comprises a rotatable base arranged at the inner bottom of a reaction cavity; a tray arranged on the base and used for bearing a wafer; the tray is provided with a positioning block on the surface facing the base; the base is provided with a positioning groove matched with the positioning block; the tray is positioned by cooperation of the positioning block and the positioning groove; and a gas channel is arranged in the base and used for spraying gas to the positioning block so as to make the centers of the tray and the base tend to coincide. The position of the tray can be accurately controlled by cooperation of the gas channel, the positioning groove and the positioning block, the centers of the tray and the base coincide, and the temperature distribution on the tray and the wafer is ensured to be uniform.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment, and more particularly to a wafer carrier device, a vapor deposition device, and a method of using it. Background Technology

[0002] In semiconductor fabrication, some processes require single-wafer deposition. For single-wafer deposition, a wafer-bearing tray is typically placed on a substrate. Heaters are evenly distributed within the substrate, and during deposition, the tray and wafer rotate at a constant speed driven by the substrate to ensure uniform crystal growth on the wafer, thus forming a uniform thin film.

[0003] However, in existing single-wafer deposition processes, the wafer carrier tray, during its placement on the substrate and rotation driven by the substrate, often experiences misalignment between the center of the tray and the center of the substrate. This results in inconsistent distances between the two ends of the tray and the center of the heater, and the average temperature of the end of the tray closer to the heater center is consistently higher than the average temperature of the end farther from the heater center. This leads to temperature eccentricity on the tray, i.e., uneven temperature distribution, which can easily cause uneven wafer film thickness on the tray, i.e., non-uniform film formation. Therefore, it is necessary to adjust the overall structure of the wafer carrier device. Summary of the Invention

[0004] The purpose of this invention is to provide a wafer carrier device, a vapor deposition equipment, and a method of use. Gas can be sprayed onto a positioning block fixed on a tray through a gas channel provided in the base, so that the centers of the tray and the base tend to coincide, thereby ensuring uniform temperature distribution on the tray and the wafer.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0006] A wafer carrier device for the reaction chamber of a vapor deposition apparatus, the wafer carrier device comprising:

[0007] A rotatable base is located at the bottom of the interior of the reaction chamber;

[0008] A tray, disposed on the base, is used to hold a wafer; and a positioning block is provided on the surface of the tray facing the base, and a positioning groove matching the positioning block is provided on the base, so that the tray is positioned by the cooperation of the positioning block and the positioning groove; and

[0009] A gas channel, disposed within the base, is used to inject gas into the positioning block so that the centers of the tray and the base tend to coincide.

[0010] Optionally, the positioning groove includes at least four first grooves, which are evenly distributed along the circumference of the base, and the number of the first grooves is even; each first groove includes two opposing first sidewalls, and only one of the first sidewalls in the same first groove communicates with the gas channel.

[0011] Optionally, the first sidewalls communicating with the gas passage in the two first grooves opposite the center of the base are not located on or are located on the same side.

[0012] Optionally, the positioning groove includes at least four second grooves, which are evenly distributed along the circumference of the base, and the number of the second grooves is even; the second groove includes two opposing second sidewalls, each of which communicates with the gas channel.

[0013] Optionally, the gas channel includes: a first air inlet channel connected to the gas supply device; and a first driving air hole, the inlet end of which is connected to the first air inlet channel and the outlet end of which penetrates the side wall of the corresponding groove, for spraying the gas onto the positioning block in the corresponding groove in a preset direction.

[0014] Optionally, the first driving air hole is a strip-shaped hole, and the preset direction is consistent with the length direction of the first driving air hole.

[0015] Optionally, the base includes opposing inner and outer sidewalls, with the inner sidewall located inside the outer sidewall;

[0016] The positioning groove includes at least four third grooves, which are evenly distributed along the circumference of the base, and the number of the third grooves is even; each third groove includes two opposing third sidewalls.

[0017] The positioning block includes a first positioning sidewall disposed opposite to the third sidewall and a second positioning sidewall disposed opposite to the inner sidewall;

[0018] The orthographic projection of the second positioning sidewall onto the plane containing the inner sidewall at least partially coincides with the inner sidewall, and the inner sidewall that coincides with the orthographic projection of the second positioning sidewall is connected to the gas channel.

[0019] Optionally, all of the third grooves form a regular 2n-sided polygon with n ≥ 2, wherein the inner sidewalls on both sides of the n adjacent third grooves are in communication with the gas channel.

[0020] Optionally, the inner sidewalls on both sides of each of the third grooves are in communication with the gas channel.

[0021] Optionally, the gas channel includes: a second air inlet channel connected to the gas supply device; and a second driving air hole, the inlet end of which is connected to the second air inlet channel and the outlet end of which penetrates the inner sidewall, for spraying the gas onto the second positioning sidewall corresponding to the positioning block.

[0022] Optionally, the gas is injected in a direction toward the center of the base.

[0023] Optionally, the wafer carrier further includes a heater disposed within the base for heating the wafer to a preset temperature.

[0024] Optionally, at temperatures below 1000°C, the width of the positioning groove on the base is greater than the width of the positioning block.

[0025] Optionally, the gas is an inert gas or nitrogen.

[0026] On the other hand, the present invention also provides a vapor deposition apparatus, the vapor deposition apparatus comprising: a reaction chamber; and a wafer carrier as described above.

[0027] Optionally, the vapor deposition apparatus further includes: a position adjustment system; and the position adjustment system includes:

[0028] A photoelectric detection mechanism is disposed on the side wall of the reaction chamber and is used to detect the deviation between the center of the tray and the center of the base and generate a deviation signal;

[0029] A signal processing mechanism, connected to the photoelectric detection mechanism, is used to determine whether the position of the tray needs to be corrected based on the deviation signal, and is also used to obtain the first gas flow rate and the first gas pressure required to make the center of the tray coincide with the center of the base when the position of the tray needs to be corrected.

[0030] A gas control mechanism, connected to the signal processing mechanism and the gas channel, is used to control the gas flow rate and pressure injected into the positioning block by the gas channel, so that the centers of the tray and the base tend to coincide.

[0031] Optionally, the signal processing mechanism is further configured to acquire a second gas flow rate and a second gas pressure required to keep the tray stationary relative to the base when the position of the tray does not need to be corrected and the base is rotating.

[0032] On the other hand, this embodiment also provides a method of using the wafer carrier device as described above, the method of use including:

[0033] Step S1: Place the tray on the base and position the tray by means of the positioning block and the positioning groove;

[0034] Step S2: Gas is injected into the positioning block through the gas channel so that the centers of the tray and the base tend to coincide.

[0035] Optionally, step S2 includes:

[0036] Step S21: Inject the gas into the positioning block through the gas channel to generate a first driving force to move the positioning block, causing the centers of the tray and the base to tend to coincide; or

[0037] Step S22: Inject the gas into the positioning block through the gas channel to generate a second driving force so that the positioning block is stationary relative to the rotating base, thereby keeping the tray stationary relative to the rotating base.

[0038] Optionally, before step S2, the method further includes detecting whether the center of the tray deviates from the center of the base. If they deviate, step S21 is executed; if they do not deviate and the base rotates, step S22 is executed; if they do not deviate and the base does not rotate, step S2 is not executed.

[0039] Compared with the prior art, the present invention has at least one of the following advantages:

[0040] This invention provides a wafer carrier device, a vapor deposition apparatus, and a method of use. In the wafer carrier device, a tray for carrying the wafer is set on a rotatable base. A positioning block is provided on the surface of the tray facing the base, and a positioning groove matching the positioning block is provided on the base. The tray can be positioned by the cooperation of the positioning block and the positioning groove. At the same time, a gas channel is also provided in the base, and gas can be injected into the positioning block through the gas channel to achieve precise control of the tray position (including position adjustment and position fixation), so that the centers of the tray and the base tend to coincide, thereby ensuring uniform temperature distribution on the tray and the wafer.

[0041] In this invention, the positioning groove may include at least four grooves, and all grooves are evenly distributed along the circumference of the base; correspondingly, the number of positioning blocks is the same as the number of grooves, and all positioning blocks can be evenly distributed along the circumference of the tray, so that one positioning block can be placed in each groove, thereby adjusting the position of the tray in multiple directions by moving the positioning block in each groove, while ensuring the uniformity of the adjustment of the tray position.

[0042] In this invention, gas can be sprayed onto the corresponding positioning block in a preset direction or toward the center of the base through a gas channel, so as to independently control the movement direction of the positioning block, thereby improving the flexibility and efficiency of pallet position adjustment, and thus enabling rapid alignment between the center of the pallet and the center of the base.

[0043] In this invention, after the centers of the tray and the base coincide, if the base rotates, gas can be sprayed onto the corresponding positioning block in a preset direction or toward the center of the base through the gas channel, so that the positioning block remains stationary relative to the rotating base. This ensures that the positioning block will not shake in the corresponding groove during the base rotation, thereby fixing the position of the tray relative to the rotating base and ensuring that the centers of the tray and the base still coincide during the base rotation.

[0044] In the vapor deposition apparatus provided by this invention, a photoelectric detection mechanism can detect the deviation between the center of the tray and the center of the base to obtain a deviation signal. A signal processing mechanism can determine whether the tray position needs to be corrected based on the deviation signal. When tray position correction is required, the signal processing mechanism sends first gas data to the gas control mechanism to make the center of the tray coincide with the center of the base. The gas control mechanism can select the gas channel to be injected based on the first gas data and control the gas flow rate and pressure injected into the positioning block through the selected gas channel to drive the positioning block to move so that the centers of the tray and the base coincide. This invention can adjust the position of the tray in real time, automatically, and precisely, effectively improving the efficiency and accuracy of tray position adjustment.

[0045] In this invention, when the signal processing mechanism determines that the position of the tray does not need to be corrected based on the deviation signal, if the base is rotating, the signal processing mechanism sends the second gas data required to make the tray stationary relative to the rotating base to the gas control mechanism. The gas control mechanism selects the gas channel that needs to be injected based on the second gas data, and controls the gas flow rate and pressure injected into the positioning block by the selected gas channel, so that the positioning block is stationary relative to the rotating base, thereby making the tray stationary relative to the rotating base, thus ensuring that the centers of the tray and the base still coincide during the base rotation process. Attached Figure Description

[0046] Figure 1 This is a schematic diagram of the structure of a vapor deposition apparatus according to an embodiment of the present invention;

[0047] Figure 2 This is a schematic diagram of the structure of a tray and positioning block in a wafer carrier device according to an embodiment of the present invention;

[0048] Figure 3 This is a schematic diagram of the structure of a base in a wafer carrier device according to an embodiment of the present invention;

[0049] Figure 4 This is a schematic diagram of the structure of a wafer carrier device provided in an embodiment of the present invention when the first sidewalls communicating with the gas channel in two opposing first grooves are not located on the same side;

[0050] Figure 5This is a schematic diagram of the structure of a wafer carrier device provided in an embodiment of the present invention, in which the first sidewalls communicating with the gas channel in two opposing first grooves are located on the same side;

[0051] Figure 6 This is a longitudinal cross-sectional schematic diagram of a gas channel in a wafer carrier device according to an embodiment of the present invention;

[0052] Figure 7 This is a schematic diagram of the structure of the second groove in a wafer carrier device according to another embodiment of the present invention;

[0053] Figure 8 This is a schematic diagram of the structure of a base in a wafer carrier device according to another embodiment of the present invention;

[0054] Figure 9 This is a schematic diagram of a structure in which the inner walls on both sides of two adjacent third grooves in a wafer carrier device are connected to a gas channel, according to another embodiment of the present invention.

[0055] Figure 10 This is a schematic diagram of a structure in which the inner sidewalls on both sides of each third groove in a wafer carrier device are connected to a gas channel, according to another embodiment of the present invention.

[0056] Figure 11 This is a longitudinal cross-sectional schematic diagram of a gas channel in a wafer carrier device provided in another embodiment of the present invention;

[0057] Figure 12 This is a schematic diagram of the structure of a tray and positioning block in a wafer carrier device provided in another embodiment of the present invention. Detailed Implementation

[0058] The wafer carrier device, vapor deposition equipment, and method of use proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clarify the explanation of the embodiments of this invention. Please refer to the drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0059] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0060] Example 1

[0061] Combined with appendix Figures 1-6 As shown, this embodiment provides a wafer carrier device for the reaction chamber 100 of a vapor deposition apparatus. The wafer carrier device includes: a rotatable base 110 disposed at the bottom of the reaction chamber 100; a tray 120 disposed on the base 110 for carrying a wafer 101; and a positioning block 121 provided on the surface of the tray 120 facing the base 110, and a positioning groove 111 on the base 110 that matches the positioning block 121. The positioning block 121 cooperates with the positioning groove 111 to support the wafer 101. The tray 120 is positioned; and a gas channel 130, disposed within the base 110, is used to inject gas into the positioning block 121 to control the position of the tray 120 (including position adjustment and position fixing), so that the centers of the tray 120 and the base 110 tend to coincide; wherein, the position adjustment of the tray 120 refers to moving the position of the tray 120 relative to the base 110, and the position fixing of the tray 120 refers to keeping the tray 120 stationary relative to the base 110.

[0062] It is understood that the wafer carrier device further includes a heater 140 disposed within the base 110 for heating the wafer 101 to a preset temperature.

[0063] Specifically, in this embodiment, when the tray 120 is placed on the stationary base 110, the positioning block 121 on the bottom surface of the tray 120 (i.e., the surface of the tray facing the base) can be correspondingly placed into the positioning groove 111. At this time, the initial positioning of the tray 120 can be achieved through the cooperation of the positioning block 121 and the positioning groove 111, thereby achieving a rough alignment of the centers of the tray 120 and the base 110. After the tray 120 is placed on the base 110, regardless of whether the base 110 is stationary or rotating, if the centers of the tray 120 and the base 110 do not coincide, the gas with a certain flow rate can be injected into the positioning block 121 through the gas channel 130 to generate a first driving force to move the positioning block 121 within the corresponding positioning groove 111, thereby precisely adjusting the position of the tray 120, and thus making the centers of the tray 120 and the base 110 coincide. After the centers of the tray 120 and the base 110 are aligned, if the base 110 rotates, the gas can be injected into the positioning block 121 through the gas channel 130 to generate a second driving force, so that the positioning block 121 is stationary relative to the rotating base 110, that is, the position of the positioning block 121 is fixed, thereby ensuring that the positioning block 121 will not shake in the corresponding positioning groove 111 during the rotation of the base 110, so that the tray 120 is stationary relative to the rotating base 110, that is, the position of the tray 120 is fixed, thereby ensuring that the centers of the tray 120 and the base 110 are still aligned during the rotation of the base 110.

[0064] Furthermore, the gas channel 130 can be connected to a gas supply device (not shown in the figure), and the gas supply device stores the gas; optionally, the gas is an inert gas or nitrogen to avoid the gas affecting the film deposition process. The end of the base 110 away from the tray 120 (i.e., the bottom end of the base) can be connected to a rotating mechanism 170, and when the rotating mechanism 170 rotates, it drives the base 110 to rotate synchronously, thereby driving the tray 120 and the wafer 101 on the base 110 to rotate synchronously to meet the deposition process requirements; optionally, the rotating mechanism 170 is a motor, but the present invention is not limited to this, as long as it can drive the base 110 to rotate.

[0065] More specifically, the heater 140 is disposed at one end of the base 110 near the tray 120 (i.e., the top of the base); when the centers of the tray 120 and the base 110 coincide, the heater 140 can uniformly heat the tray 120, so that the temperature distribution on the tray 120 is uniform, thereby the wafer 101 can be uniformly heated to the preset temperature through the tray 120, so that a uniform thin film is formed on the surface of the wafer 101. Optionally, the preset temperature is less than or equal to 1000℃; and below 1000℃, the width of the positioning groove 111 on the base 110 (i.e., the distance of the positioning groove in the circumferential direction of the base) is greater than the width of the positioning block 121 (i.e., the distance of the positioning block in the circumferential direction of the tray), so that when the heater 140 heats the tray 120 and the wafer 101, even if the positioning block 121 and the positioning groove 111 expand and deform due to heat, the expanded positioning block 121 can still move within the expanded positioning groove 111, thereby ensuring that the position of the tray 120 can always be adjusted throughout the entire deposition process, so that the centers of the tray 120 and the base 110 always coincide throughout the entire deposition process, ensuring that the temperature distribution on the tray 120 and the wafer 101 is uniform throughout the entire deposition process.

[0066] Please continue to refer to this. Figures 3 to 6 The positioning groove 111 includes at least four first grooves 1110, which are evenly distributed around the circumference of the base 110, and the number of the first grooves 1110 is even; each first groove 1110 includes two opposing first sidewalls 1111, and only one of the first sidewalls 1111 in the same first groove 1110 is connected to the gas channel 130.

[0067] It is understood that the gas channel 130 includes: a first air inlet channel 1303, connected to the gas supply device; and a first driving air hole 1301, the inlet end of which is connected to the first air inlet channel 1303, and the outlet end of which penetrates the sidewall of the corresponding groove, for spraying the gas onto the positioning block 121 in the corresponding groove in a preset direction. Optionally, the first driving air hole 1301 is a strip-shaped hole, and the preset direction is consistent with the length direction of the first driving air hole 1301.

[0068] Specifically, in this embodiment, all the first grooves 1110 are arranged at one end of the base 110 near the tray 120; and the number of the first grooves 1110 can be the same as the number of the positioning blocks 121 fixed on the bottom surface of the tray 120, so that one positioning block 121 can be placed in each first groove 1110. Thus, when the centers of the tray 120 and the base 110 do not coincide, the position of the tray 120 can be adjusted in multiple directions by moving the positioning block 121 in each first groove 1110. And when the centers of the tray 120 and the base 110 coincide and the base 110 rotates, the position of the tray 120 can be fixed by fixing the position of the positioning block 121 in any first groove 1110. At the same time, all the first grooves 1110 are evenly distributed along the circumference of the base 110. Correspondingly, all the positioning blocks 121 can be evenly distributed along the circumference of the tray 120 to ensure the uniformity of the adjustment of the position of the tray 120. More specifically, each of the positioning blocks 121 may include two opposing first positioning sidewalls 1211 (e.g., Figure 2 As shown in the figure, when the positioning blocks 121 are placed one-to-one in the first groove 1110, the first positioning sidewall 1211 of the positioning block 121 is opposite to the first sidewall 1111 of the first groove 1110. Preferably, the positioning block 121 is a cuboid, but the present invention is not limited thereto.

[0069] Specifically, in this embodiment, if only one of the first sidewalls 1111 in the same first groove 1110 is connected to the gas channel 130, then the number of gas channels 130 is the same as the number of first grooves 1110. Furthermore, the gas can be supplied independently along the preset direction to the first groove 1110 communicating with the gas channel 130 through a gas channel 130. This allows for independent control of the movement direction of the positioning block 121 in the first groove 1110 when the centers of the tray 120 and the base 110 are not aligned. This enables independent adjustment of the position of the tray 120 in the preset direction, thereby improving the flexibility and efficiency of the tray 120 position adjustment and achieving rapid alignment of the center of the tray 120 and the center of the base 110. In addition, this also allows the positioning block 121 in the first groove 1110 to remain relatively stationary relative to the rotating base 110 after the centers of the tray 120 and the base 110 are aligned and the base 110 is rotated. This keeps the tray 120 relatively stationary relative to the rotating base, thereby fixing the position of the tray 120.

[0070] More specifically, in each of the gas channels 130, the first air inlet channel 1303 can be vertically disposed within the base 110, and the inlet end of the first air inlet channel 1303 is connected to the gas supply device; the first driving air hole 1301 is located at one end of the base 110 near the tray 120, and the first driving air hole 1301 can be horizontally disposed within the base 110, while the inlet end of the first driving air hole 1301 is connected to the outlet end of the first air inlet channel 1303, and the outlet end of the first driving air hole 1301 passes through one of the first sidewalls 1111 corresponding to the first groove 1110 and is connected to the first groove 1110, so that the gas in the gas supply device can pass through the first air inlet channel. Gas 1303 and the first driving air hole 1301 are supplied to the first groove 1110 along the preset direction, so that the gas is sprayed onto the first positioning sidewall 1211 of the positioning block 121 in the first groove 1110 along the preset direction. Then, when the centers of the tray 120 and the base 110 are not coincident, a first driving force is generated to drive the positioning block 121 to move along the preset direction to adjust the position of the tray 120 in the preset direction. Alternatively, when the centers of the tray 120 and the base 110 coincide and the base 110 rotates, a second driving force is generated to make the positioning block 121 stationary relative to the rotating base 110, so that the tray 120 is stationary relative to the rotating base 110. Optionally, the first driving air hole 1301 is a strip-shaped hole, which can shorten the flow path of the gas in the first driving air hole 1301 as much as possible and reduce the flow resistance of the gas, so that the gas can be quickly injected onto the positioning block 121, thereby improving the efficiency of the position adjustment of the tray 120 and the stability of the position fixation of the tray 120, but the present invention is not limited thereto.

[0071] Please continue to refer to this. Figure 4 and Figure 5 The first sidewall 1111 of the two first grooves 1110 opposite to the center of the base 110 that communicate with the gas channel 130 may not be located on the same side or may be located on the same side.

[0072] Specifically, the number of the first grooves 1110 is set to 2m (m≥2). If the first sidewalls 1111 of the two first grooves 1110 opposite the center of the base 110 are not located on the same side, the gas can be supplied to the first grooves 1110 from 2m directions through the gas channel 130. This allows the gas to generate a first driving force in 2m directions when the centers of the tray 120 and the base 110 are not aligned, driving the corresponding positioning blocks 121 to move, thereby independently adjusting the position of the tray 120 in 2m directions. Furthermore, when the centers of the tray 120 and the base 110 are aligned and the base 110 is rotating, the gas supplied to the first grooves 1110 from 2m directions can generate a second driving force in 2m directions, causing each positioning block 121 to remain stationary relative to the rotating base 110, thus keeping the tray 120 stationary relative to the rotating base 110. For example, as... Figure 4 As shown, there are four first grooves 1110, and the first sidewalls 1111 of the gas channels 130 in two first grooves 1110 that are opposite each other about the center of the base 110 are not located on the same side. At this time, the gas can be introduced into the corresponding first grooves 1110 in the four directions of X+, X-, Y+, and Y- through the gas channels 130. When the centers of the tray 120 and the base 110 do not coincide, and the gas generates a first driving force in the X+ direction to move the corresponding positioning block 121, the tray 120 as a whole will move in the X+ direction, thereby adjusting the position of the tray 120 in the X+ direction. Adjustments can be made; similarly, the gas can be made to generate a first driving force in the X-, Y+, and Y- directions to drive the corresponding positioning block 121 to move, so as to adjust the position of the tray 120 in the X-, Y+, and Y- directions respectively, so that the centers of the tray 120 and the base 110 coincide; further, after the centers of the tray 120 and the base 110 coincide and the base 110 rotates, the gas can be made to generate a second driving force in the X+, X-, Y+, and Y- directions, so that each positioning block 121 is stationary relative to the rotating base 110, so that the tray 120 is stationary relative to the rotating base 110.

[0073] Specifically, if the first sidewalls 1111 of the two first grooves 1110 opposite to the center of the base 110, which communicate with the gas channel 130, are located on the same side, then the gas can be supplied to the first grooves 1110 from m directions through the gas channel 130. This allows the gas to generate a first driving force in m directions when the centers of the tray 120 and the base 110 are not aligned, driving the corresponding positioning blocks 121 to move, thereby independently adjusting the position of the tray 120 in m directions. Furthermore, when the centers of the tray 120 and the base 110 are aligned and the base 110 is rotating, the gas supplied to the first grooves 1110 from m directions can generate a second driving force in m directions, causing each positioning block 121 to remain stationary relative to the rotating base 110, thus keeping the tray 120 stationary relative to the rotating base 110. For example, as... Figure 5 As shown, there are four first grooves 1110, and the first sidewalls 1111 of the two first grooves 1110 that are opposite each other about the center of the base 110 are located on the same side. At this time, the gas can be introduced into the corresponding first grooves 1110 in the X+ and Y+ directions through the gas channel 130, so that the gas generates a first driving force in the X+ and Y+ directions when the centers of the tray 120 and the base 110 are not coincident, driving the corresponding positioning block 121 to move, so as to adjust the position of the tray 120 in the X+ and Y+ directions respectively, so that the centers of the tray 120 and the base 110 coincide. Furthermore, after the centers of the tray 120 and the base 110 coincide and the base 110 rotates, the gas can also generate a second driving force in the X+ and Y+ directions, so that each positioning block 121 is stationary relative to the rotating base 110, so that the tray 120 is stationary relative to the rotating base 110.

[0074] Example 2

[0075] Combined with appendix Figures 1-3 As shown in Figures 6 and 7, unlike Embodiment 1, the positioning groove 111 in this embodiment includes at least four second grooves 1120. The second grooves 1120 are evenly distributed along the circumference of the base 110, and the number of the second grooves 1120 is even. The second groove 1120 includes two opposing second sidewalls 1121, and each second sidewall 1121 is connected to the gas channel 130.

[0076] Specifically, in this embodiment, all the second grooves 1120 are arranged at one end of the base 110 near the tray 120; and the number of the second grooves 1120 can be the same as the number of the positioning blocks 121 fixed on the bottom surface of the tray 120, so that one positioning block 121 can be placed in each second groove 1120. Thus, when the centers of the tray 120 and the base 110 do not coincide, the position of the tray 120 can be adjusted in multiple directions by moving the positioning block 121 in each second groove 1120. And when the centers of the tray 120 and the base 110 coincide and the base 110 rotates, the position of the tray 120 can be fixed by fixing the position of the positioning block 121 in any second groove 1120. At the same time, all the second grooves 1120 are evenly distributed along the circumference of the base 110 to ensure the uniformity of the adjustment of the position of the tray 120. More specifically, when the positioning blocks 121 are placed one-to-one in the second grooves 1120, the first positioning sidewalls 1211 of the positioning blocks 121 (e.g.) Figure 2 (As shown) is disposed opposite to the second sidewall 1121 of the second groove 1120.

[0077] Specifically, in this embodiment, two second sidewalls 1121 in the same second groove 1120 are respectively connected to the gas channel 130, so the number of gas channels 130 is twice the number of second grooves 1120. Further, gas can be supplied independently along the preset direction to the second groove 1120 connected to the gas channel 130 through one gas channel 130. This allows independent control of the movement direction of the positioning block 121 in the second groove 1120 when the centers of the tray 120 and the base 110 are not aligned, thereby independently adjusting the position of the tray 120 in the preset direction. Furthermore, this also allows the positioning block 121 in the second groove 1120 to remain relatively stationary relative to the rotating base 110 after the centers of the tray 120 and the base 110 are aligned and the base 110 rotates, thus keeping the tray 120 relatively stationary relative to the rotating base, thereby fixing the position of the tray 120. More specifically, the outlet end of the first driving air hole 1301 in each gas channel 130 passes through the second sidewall 1121 corresponding to the second groove 1120 and communicates with the second groove 1120, so that the gas can be supplied to the second groove 1120 through the first air inlet channel 1303 and the first driving air hole 1301 along the preset direction, thereby causing the gas to be sprayed onto the first positioning sidewall 1211 of the positioning block 121 in the second groove 1120 along the preset direction, thereby generating a first driving force to drive the positioning block 121 to move along the preset direction when the centers of the tray 120 and the base 110 are not coincident, so as to adjust the position of the tray 120 in the preset direction, or generating a second driving force to make the positioning block 121 stationary relative to the rotating base 110 after the centers of the tray 120 and the base 110 coincide and the base 110 rotates, so as to make the tray 120 stationary relative to the rotating base 110.

[0078] Specifically, in this embodiment, the number of second grooves 1120 is set to 2p (p≥2). Then, gas can be supplied to the second grooves 1120 from 2p directions through the gas channel 130. This allows the gas to generate a first driving force in 2p directions when the centers of the tray 120 and the base 110 are not aligned, causing the corresponding positioning blocks 121 to move, thereby independently adjusting the position of the tray 120 in 2p directions. Furthermore, when the centers of the tray 120 and the base 110 are aligned and the base 110 rotates, the gas supplied to the second grooves 1120 from 2p directions can generate a second driving force in 2p directions, causing each positioning block 121 to remain stationary relative to the rotating base 110, thus keeping the tray 120 stationary relative to the rotating base 110. For example, as... Figure 7 As shown, there are four second grooves 1120. Gas can be introduced into the corresponding second grooves 1120 in the four directions X+, X-, Y+, and Y- through the gas channel 130. This allows the gas to generate a first driving force in the X+, X-, Y+, and Y- directions when the centers of the tray 120 and the base 110 are not aligned, causing the corresponding positioning blocks 121 to move. This adjusts the position of the tray 120 in the X+, X-, Y+, and Y- directions, so that the centers of the tray 120 and the base 110 are aligned. Furthermore, after the centers of the tray 120 and the base 110 are aligned and the base 110 is rotated, the gas can generate a second driving force in the X+, X-, Y+, and Y- directions, so that each positioning block 121 is stationary relative to the rotating base 110, thus keeping the tray 120 stationary relative to the rotating base 110.

[0079] Furthermore, in this embodiment, since the two second sidewalls 1121 in the same second groove 1120 are respectively connected to the gas channel 130, the gas can be supplied to the second groove 1120 simultaneously through the two gas channels 130 connected to the same second groove 1120. This prevents the first positioning sidewall 1211 of the positioning block 121 from abutting against the second sidewall 1121 of the corresponding second groove 1120 during the adjustment of the position of the tray 120, thereby preventing the problem of inaccurate positioning of the tray 120 caused by the thermal expansion and deformation of the second sidewall 1121. In this case, during the adjustment of the position of the tray 120, the two gas channels 130 connected to the same second groove 1120 need to continuously supply the gas to the second groove 1120.

[0080] Example 3

[0081] Combined with appendix Figure 1 , 8 As shown in Figure 12, unlike Embodiment 1, the base 110 in this embodiment includes opposing inner sidewalls 1101 and outer sidewalls 1102, with the inner sidewall 1101 located inside the outer sidewall 1102; the positioning groove 111 includes at least four third grooves 1130, which are evenly distributed along the circumference of the base 110, and the number of third grooves 1130 is even; each third groove 1130 includes two opposing third sidewalls 1131; the positioning block 121' includes a first positioning sidewall 1211 disposed opposite to the third sidewall 1131 and a second positioning sidewall 1212 disposed opposite to the inner sidewall 1101; the orthographic projection of the second positioning sidewall 1212 onto the surface where the inner sidewall 1101 is located at least partially coincides with the inner sidewall 1101, and the inner sidewall 1101 that coincides with the orthographic projection of the second positioning sidewall 1212 is connected to the gas channel 130'.

[0082] It is understood that the gas channel 130' includes: a second air inlet channel 1304, connected to the gas supply device; and a second driving air hole 1302, the inlet end of which is connected to the second air inlet channel 1304, and the outlet end of which penetrates the inner sidewall 1101, for spraying the gas onto the second positioning sidewall 1212 corresponding to the positioning block 121'. Optionally, the gas spray direction is towards the center of the base 110.

[0083] Specifically, in this embodiment, all the third grooves 1130 are arranged at one end of the base 110 near the tray 120; and the number of the third grooves 1130 can be the same as the number of the positioning blocks 121' fixed to the bottom surface of the tray 120, so that one positioning block 121' can be placed in each third groove 1130. Thus, when the centers of the tray 120 and the base 110 do not coincide, multiple positioning blocks 121' in each third groove 1130 can be moved to achieve positioning in multiple grooves. The position of the tray 120 is fixed by fixing the position of the positioning block 121 in any of the third grooves 1130 when the centers of the tray 120 and the base 110 coincide and the base 110 rotates. At the same time, all the third grooves 1130 are evenly distributed along the circumference of the base 110. Correspondingly, all the positioning blocks 121' can be evenly distributed along the circumference of the tray 120 to ensure the uniformity of the adjustment of the position of the tray 120.

[0084] More specifically, such as Figure 12As shown, each positioning block 121' includes not only two opposing first positioning sidewalls 1211, but also two second positioning sidewalls 1212 connected at an angle to the first positioning sidewalls 1211; and when the positioning blocks 121' are placed in the third groove 1130 in a one-to-one correspondence, the first positioning sidewalls 1211 of the positioning blocks 121' are opposite to the third sidewalls 1131 of the third groove 1130, and the second positioning sidewalls 1212 are opposite to the inner sidewalls 1101 of the base 110. Optionally, the base 110 is a cylindrical body, and the second positioning sidewall 1212 is an arc-shaped sidewall; and the second positioning sidewall 1212 and the first positioning sidewall 1211 can be connected at 90 degrees or approximately 90 degrees, that is, the positioning block 121′ is a T-shaped body. This allows the inner sidewalls 1101 on both sides of the same third groove 1130 to communicate with the gas channel 130′, so that the gas channel 130′ on both sides of the third groove 1130 can spray the gas onto the two second positioning sidewalls 1212 corresponding to the positioning block 121′, thereby ensuring the stability of the movement of the positioning block 121′.

[0085] Specifically, in this embodiment, the second air intake channel 1304 in the gas channel 130' can be vertically arranged within the base 110, and the inlet end of the second air intake channel 1304 is connected to the gas supply device; the second driving air hole 1302 is located at one end of the base 110 near the tray 120, and the second driving air hole 1302 can be horizontally arranged within the base 110, while the inlet end of the second driving air hole 1302 is connected to the outlet end of the second air intake channel 1304, and the outlet end of the second driving air hole 1302 penetrates the inner sidewall 1101 that coincides with the orthographic projection of the second positioning sidewall 1212 of the positioning block 121', so that the gas supply device... The gas can be injected through the second air inlet channel 1304 and the second drive air hole 1302 onto the second positioning sidewall 1212 of the positioning block 121', thereby generating a first driving force when the centers of the tray 120 and the base 110 are not aligned, causing the positioning block 121' to move towards the center of the base 110 to adjust the position of the tray 120, or generating a second driving force when the centers of the tray 120 and the base 110 are aligned and the base 110 is rotating, causing the positioning block 121' to remain stationary relative to the rotating base 110, thus fixing the position of the tray 120. Optionally, the second driving air hole 1302 is a strip-shaped hole to shorten the flow path of the gas in the second driving air hole 1302 as much as possible and reduce the flow resistance of the gas, so that the gas can be quickly injected onto the positioning block 121', thereby improving the efficiency of the position adjustment of the tray 120 and the stability of the position fixation of the tray 120.

[0086] More specifically, in this embodiment, the gas can be sprayed independently into the second positioning sidewall 1212 corresponding to the positioning block 121' in a direction toward the center of the base 110 through a gas channel 130'. This allows for independent control of the movement direction of the positioning block 121' when the centers of the tray 120 and the base 110 are not aligned, thereby improving the flexibility and efficiency of the tray 120 position adjustment and achieving rapid alignment of the center of the tray 120 and the center of the base 110.

[0087] Please continue to refer to this. Figure 9All the third grooves 1130 form a regular 2n-sided polygon (i.e., there are 2n third grooves 1130) and n≥2. The inner sidewalls 1101 on both sides of the n adjacent third grooves 1130 are connected to the gas channels 130'. The number of gas channels 130' is the same as the number of third grooves 1130. At this time, the gas can be sprayed from n directions to the corresponding positioning blocks 121' through the gas channels 130', so that the centers of the gas on the tray 120 and the base 110 do not coincide. A first driving force is generated in n directions to move the corresponding positioning block 121', thereby independently adjusting the position of the tray 120 in n directions. Furthermore, when the centers of the tray 120 and the base 110 coincide and the base 110 rotates, the gas injected from n directions to the corresponding positioning block 121' can generate a second driving force in n directions, causing each positioning block 121' to remain stationary relative to the rotating base 110, thus keeping the tray 120 stationary relative to the rotating base 110. For example, as... Figure 9 As shown, there are four third grooves 1130, and the inner sidewalls 1101 on both sides of two adjacent third grooves 1130 are connected to the gas channel 130'. At this time, the gas can be injected into the corresponding positioning block 121' in the X- and Y- directions through the gas channel 130', so that the gas generates a first driving force in the X- and Y- directions to drive the corresponding positioning block 121' to move, thereby adjusting the position of the tray 120 in the X- and Y- directions, so that the center of the tray 120 and the base 110 coincides. Furthermore, after the center of the tray 120 and the base 110 coincides and the base 110 rotates, the gas can also generate a second driving force in the X- and Y- directions, so that each positioning block 121' is stationary relative to the rotating base 110, so that the tray 120 is stationary relative to the rotating base 110.

[0088] Please continue to refer to this. Figure 10In some embodiments, the inner sidewalls 1101 on both sides of each of the third grooves 1130 are connected to the gas channels 130', and the number of gas channels 130' is twice the number of the third grooves 1130. Specifically, if the number of the third grooves 1130 is also set to 2n (n≥2), then the gas can be injected from 2n directions into the corresponding positioning blocks 121' through the gas channels 130'. This allows the gas to generate a first driving force in 2n directions when the centers of the tray 120 and the base 110 are not aligned, causing the corresponding positioning blocks 121' to move, thereby independently adjusting the position of the tray 120 in 2n directions. Furthermore, when the centers of the tray 120 and the base 110 are aligned and the base 110 is rotating, the gas injected from 2n directions into the corresponding positioning blocks 121' can generate a second driving force in 2n directions, causing each positioning block 121' to remain stationary relative to the rotating base 110, thus keeping the tray 120 stationary relative to the rotating base 110. For example, as... Figure 10 As shown, there are four third grooves 1130, and the inner sidewalls 1101 on both sides of each third groove 1130 are connected to the gas channel 130'. At this time, gas can be injected into the corresponding positioning block 121' along the four directions X+, X-, Y+, and Y- through the gas channel 130'. This causes the gas to generate a first driving force in the X+, X-, Y+, and Y- directions when the centers of the tray 120 and the base 110 are not aligned, thus moving the corresponding positioning block 121'. Thus, the position of the tray 120 is adjusted in the X+, X-, Y+, and Y- directions respectively, so that the centers of the tray 120 and the base 110 coincide; further, after the centers of the tray 120 and the base 110 coincide and the base 110 rotates, the gas can also generate a second driving force in the X+, X-, Y+, and Y- directions, so that each of the positioning blocks 121′ is stationary relative to the rotating base 110, so that the tray 120 is stationary relative to the rotating base 110.

[0089] Furthermore, since the inner sidewalls 1101 on both sides of each of the third grooves 1130 are connected to the gas channels 130', the gas channels 130' on both sides of the two third grooves 1130 facing each other about the center of the base 110 can simultaneously spray the gas into the two positioning blocks 121' facing each other about the center of the base 110. This prevents the second positioning sidewall 1212 of the positioning block 121' from abutting against the inner sidewall 1101 of the base 110 during the adjustment of the position of the tray 120, thereby avoiding the problem of inaccurate positioning of the tray 120 due to the thermal expansion and deformation of the inner sidewall 1101. In this case, during the adjustment of the position of the tray 120, the gas channels 130' on both sides of the two third grooves 1130 facing each other about the center of the base 110 need to continuously spray the gas into the corresponding positioning blocks 121', but the present invention is not limited thereto.

[0090] On the other hand, this embodiment also provides a vapor deposition apparatus, which includes: a reaction chamber 100; and a wafer carrier device as described in Embodiment 1, Embodiment 2 or Embodiment 3, but not limited to the above embodiments.

[0091] It is understood that the vapor deposition apparatus further includes: a position adjustment system; and the position adjustment system includes: a photoelectric detection mechanism 150, disposed on the side wall of the reaction chamber 100, for detecting the deviation between the center of the tray 120 and the center of the base 110 and generating a deviation signal; a signal processing mechanism (not shown in the figure), connected to the photoelectric detection mechanism 150, for determining whether the position of the tray 120 needs to be corrected based on the deviation signal, and for acquiring, when the position of the tray 120 needs to be corrected, the first gas flow rate and the first gas pressure required to make the center of the tray 120 coincide with the center of the base 110, and for acquiring, when the position of the tray 120 does not need to be corrected and the base 110 rotates, the second gas flow rate and the second gas pressure required to make the tray 120 stationary relative to the base 110; and a gas control mechanism (not shown in the figure), connected to the signal processing mechanism and the gas channel (e.g., Figure 6 130 as shown or as Figure 11 The 130' connection shown is used to control the gas channel to be injected into the positioning block (e.g., Figure 2 As shown in 121 or as Figure 12 The gas flow rate and pressure shown in 121′ are adjusted to make the centers of the tray 120 and the base 110 tend to coincide.

[0092] Specifically, in this embodiment, an observation window 160 is provided on the side wall of the reaction chamber 100. The photoelectric detection mechanism 150 can be a laser rangefinder. The photoelectric detection mechanism 150 can emit a detection signal through the observation window 160 to the tray 120, which is in a stationary state or a high-speed rotating state, to detect the deviation between the center of the tray 120 and the center of the base 110 at regular intervals or in real time throughout the deposition process, thereby obtaining the deviation signal. More specifically, when the signal processing mechanism determines that the position of the tray 120 needs to be corrected based on the deviation signal, the signal processing mechanism will send the first gas data (including the first gas flow rate and the first gas pressure) required to make the center of the tray 120 coincide with the center of the base 110 to the gas control mechanism. The gas control mechanism selects the gas channel that needs to inject the gas based on the first gas data, and controls the selected gas channel to inject the gas with the first gas flow rate and the first gas pressure to the positioning block to generate a first driving force to move the positioning block, thereby completing one adjustment of the position of the tray 120. Furthermore, after completing one adjustment of the position of the tray 120, the photoelectric detection mechanism 150 generates a new deviation signal. If the signal processing mechanism determines that the position of the tray 120 still needs to be corrected based on the new deviation signal, the position of the tray 120 is adjusted again through the gas control mechanism and the gas channel until the signal processing mechanism determines that the position of the tray 120 does not need to be corrected based on the deviation signal, that is, until the center of the tray 120 and the base 110 coincide.

[0093] Furthermore, when the signal processing mechanism determines that the position of the tray 120 does not need to be corrected based on the deviation signal, if the base 110 is rotating, the signal processing mechanism will send the second gas data (including the second gas flow rate and the second gas pressure) required to make the tray 120 stationary relative to the rotating base 110 to the gas control mechanism; the gas control mechanism selects the gas channel that needs to inject the gas based on the second gas data, and controls the selected gas channel to inject the gas with the second gas flow rate and the second gas pressure to the positioning block to generate a second driving force so that the positioning block is stationary relative to the rotating base 110, so that the tray 120 is stationary relative to the rotating base 110, thereby ensuring that the centers of the tray 120 and the base 110 still coincide during the rotation of the base 110.

[0094] Furthermore, if the signal processing mechanism determines that the position of the tray 120 does not need to be corrected based on the deviation signal, and the base 110 is in a stationary state, the signal processing mechanism will not send gas data to the gas control mechanism, and the gas channel will not spray the gas.

[0095] On the other hand, this embodiment also provides a method of using the wafer carrier device as described in Embodiment 1, Embodiment 2, or Embodiment 3, but not limited to the above embodiments. The method of use includes: step S1, placing the tray 120 on the base 110, and using the positioning block (such as...) Figure 2 As shown in 121 or as Figure 12 The 121' shown engages with the positioning groove 111 to position the tray 120; step S2, the gas channel (e.g., Figure 6 130 as shown or as Figure 11 Gas is injected into the positioning block (130′) as shown in the figure to make the centers of the tray 120 and the base 110 tend to coincide.

[0096] It is understood that step S2 includes: step S21, injecting the gas into the positioning block through the gas channel to generate a first driving force to drive the positioning block to move, so that the centers of the tray 120 and the base 110 tend to coincide; or step S22, injecting the gas into the positioning block through the gas channel to generate a second driving force to make the positioning block stationary relative to the rotating base 110, so that the tray 120 is stationary relative to the rotating base 110.

[0097] It is understood that, before step S2, the method further includes detecting whether the center of the tray 120 is deviated from the center of the base 110. If they are deviated, step S21 is executed; if they are not deviated and the base 110 rotates, step S22 is executed; if they are not deviated and the base 110 does not rotate, step S2 is not executed.

[0098] Specifically, in this embodiment, before executing step S2, if a deviation between the center of the tray 120 and the center of the base 110 is detected, it is also necessary to obtain the first gas data (including the first gas flow rate and the first gas pressure) required to make the center of the tray 120 coincide with the center of the base 110. When executing step S21, the gas channel that needs to inject the gas can be selected according to the first gas data, and the selected gas channel can be controlled to inject the gas with the first gas flow rate and the first gas pressure into the positioning block to generate a first driving force to move the positioning block, thereby completing one adjustment of the position of the tray 120. In addition, after completing one adjustment of the position of the tray 120, it is necessary to re-detect whether the center of the tray 120 and the center of the base 110 are deviated. If they are deviated, step S21 is executed again until it is detected that the center of the tray 120 and the center of the base 110 are not deviated, that is, the centers of the tray 120 and the base 110 coincide.

[0099] Specifically, in this embodiment, before executing step S2, if it is detected that the center of the tray 120 is not deviated from the center of the base 110 and the base 110 is rotating, it is also necessary to obtain the second gas data (including the second gas flow rate and the second gas pressure) required to make the tray 120 stationary relative to the rotating base 110. When executing step S22, the gas channel that needs to be injected can be selected according to the second gas data, and the selected gas channel can be controlled to inject the gas with the second gas flow rate and the second gas pressure into the positioning block to generate a second driving force so that the positioning block is stationary relative to the rotating base 110, so that the tray 120 is stationary relative to the rotating base 110, thereby ensuring that the centers of the tray 120 and the base 110 still coincide during the rotation of the base 110.

[0100] In summary, this embodiment provides a wafer carrier device, a vapor deposition apparatus, and a method for using the wafer. The wafer carrier device has a wafer-carrying tray mounted on a rotatable base. Positioning blocks are provided on the surface of the tray facing the base, and positioning grooves that match the positioning blocks are provided on the base. The tray can be positioned by the cooperation of the positioning blocks and the positioning grooves. Simultaneously, a gas channel is provided within the base, through which gas can be injected into the positioning blocks to achieve precise control of the tray's position (including position adjustment and position fixation), ensuring that the centers of the tray and the base tend to coincide, thereby guaranteeing uniform temperature distribution on both the tray and the wafer. In this embodiment, the positioning grooves may include at least four grooves, all of which are evenly distributed along the circumference of the base. Correspondingly, the number of positioning blocks is the same as the number of grooves, and all positioning blocks can be evenly distributed along the circumference of the tray, allowing one positioning block to be placed in each groove. This allows for adjustment of the tray's position in multiple directions by moving the positioning blocks in each groove, while also ensuring the uniformity of the tray's position adjustment. Furthermore, in this embodiment, a gas channel allows for the independent injection of gas along a preset direction or toward the center of the base onto the corresponding positioning block. This enables independent control of the positioning block's movement direction, thereby improving the flexibility and efficiency of pallet position adjustment and achieving rapid alignment between the pallet center and the base center. After the centers of the pallet and base coincide, if the base rotates, gas can also be injected along a preset direction or toward the base center onto the corresponding positioning block via the gas channel. This keeps the positioning block stationary relative to the rotating base, ensuring that it does not wobble within the corresponding groove during base rotation. Consequently, the pallet remains stationary relative to the rotating base, thus fixing its position and ensuring that the centers of the pallet and base remain aligned during base rotation.

[0101] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A wafer carrier device for use in the reaction chamber of a vapor deposition apparatus, characterized in that, The wafer carrier includes: A rotatable base is located at the bottom of the interior of the reaction chamber; A tray, disposed on the base, is used to hold a wafer; the base rotates, causing the tray to rotate synchronously; a positioning block is provided on the surface of the tray facing the base, and a positioning groove matching the positioning block is provided on the base, the tray being positioned by the cooperation of the positioning block and the positioning groove; the positioning groove includes at least four grooves, the grooves being evenly distributed along the circumference of the base; one positioning block is placed in each groove, and each groove includes two opposing sidewalls; and A gas channel, disposed within the base, is used to inject gas into the positioning block so that the centers of the tray and the base tend to coincide; The gas passage is in communication with at least one sidewall of the same groove; or, The gas channel communicates with the inner sidewalls of the base on both sides of each groove, and the positioning block includes a second positioning sidewall disposed opposite to the inner sidewall and the gas channel.

2. The wafer carrier device as described in claim 1, characterized in that, The positioning groove includes at least four first grooves, which are evenly distributed along the circumference of the base, and the number of the first grooves is even; each first groove includes two opposing first sidewalls, and only one of the first sidewalls in the same first groove communicates with the gas channel.

3. The wafer carrier device as described in claim 2, characterized in that, The first sidewalls of the two first grooves opposite the center of the base, which communicate with the gas passage, are not located on the same side.

4. The wafer carrier device as described in claim 1, characterized in that, The positioning groove includes at least four second grooves, which are evenly distributed along the circumference of the base, and the number of the second grooves is even; each second groove includes two opposing second sidewalls, and each second sidewall communicates with the gas channel.

5. The wafer carrier device as described in any one of claims 2 to 4, characterized in that, The gas channel includes: a first air inlet channel, which is connected to the gas supply device; and a first driving air hole, whose inlet end is connected to the first air inlet channel and whose outlet end penetrates the side wall of the corresponding groove, for spraying the gas onto the positioning block in the corresponding groove in a preset direction.

6. The wafer carrier device as described in claim 5, characterized in that, The first driving air hole is a strip-shaped hole, and the preset direction is consistent with the length direction of the first driving air hole.

7. The wafer carrier device as described in claim 1, characterized in that, The base includes opposing inner and outer sidewalls, with the inner sidewall located inside the outer sidewall; The positioning groove includes at least four third grooves, which are evenly distributed along the circumference of the base, and the number of the third grooves is even; each third groove includes two opposing third sidewalls. The positioning block includes a first positioning sidewall disposed opposite to the third sidewall; The orthographic projection of the second positioning sidewall onto the plane containing the inner sidewall at least partially coincides with the inner sidewall, and the inner sidewall that coincides with the orthographic projection of the second positioning sidewall is connected to the gas channel.

8. The wafer carrier device as described in claim 7, characterized in that, The inner sidewalls on both sides of each of the third grooves are in communication with the gas channel.

9. The wafer carrier device according to any one of claims 7 to 8, characterized in that, The gas channel includes: a second air inlet channel connected to the air supply device; and a second driving air hole, the inlet end of which is connected to the second air inlet channel and the outlet end of which penetrates the inner sidewall, for spraying the gas onto the second positioning sidewall corresponding to the positioning block.

10. The wafer carrier device as claimed in claim 9, characterized in that, The gas is injected in a direction toward the center of the base.

11. The wafer carrier device as claimed in claim 1, characterized in that, Also includes: A heater, disposed within the base, is used to heat the wafer to a preset temperature.

12. The wafer carrier device as claimed in claim 11, characterized in that, Below 1000℃, the width of the positioning groove on the base is greater than the width of the positioning block.

13. The wafer carrier device as claimed in claim 1, characterized in that, The gas is an inert gas or nitrogen.

14. A vapor deposition apparatus, characterized in that, The vapor deposition apparatus includes: a reaction chamber; and a wafer carrier as described in any one of claims 1 to 13.

15. The vapor deposition apparatus as described in claim 14, characterized in that, The vapor deposition apparatus further includes: a position adjustment system; and the position adjustment system includes: A photoelectric detection mechanism is disposed on the side wall of the reaction chamber and is used to detect the deviation between the center of the tray and the center of the base and generate a deviation signal; A signal processing mechanism, connected to the photoelectric detection mechanism, is used to determine whether the position of the tray needs to be corrected based on the deviation signal, and is also used to obtain the first gas flow rate and the first gas pressure required to make the center of the tray coincide with the center of the base when the position of the tray needs to be corrected. A gas control mechanism, connected to the signal processing mechanism and the gas channel, is used to control the gas flow rate and pressure injected into the positioning block by the gas channel, so that the centers of the tray and the base tend to coincide.

16. The vapor deposition apparatus as described in claim 15, characterized in that, The signal processing mechanism is also used to acquire a second gas flow rate and a second gas pressure required to keep the tray stationary relative to the base when the position of the tray does not need to be corrected and the base is rotating.

17. A method of using the wafer carrier device as described in any one of claims 1 to 13, characterized in that, The method of use includes: Step S1: Place the tray on the base and position the tray by means of the positioning block and the positioning groove; Step S2: Gas is injected into the positioning block through the gas channel so that the centers of the tray and the base tend to coincide.

18. The method of using the wafer carrier device as described in claim 17, characterized in that, Step S2 includes: Step S21: Inject the gas into the positioning block through the gas channel to generate a first driving force to move the positioning block, causing the centers of the tray and the base to tend to coincide; or Step S22: Inject the gas into the positioning block through the gas channel to generate a second driving force so that the positioning block is stationary relative to the rotating base, thereby keeping the tray stationary relative to the rotating base.

19. The method of using the wafer carrier device as described in claim 18, characterized in that, Before step S2, the process further includes detecting whether the center of the tray is offset from the center of the base. If they are offset, step S21 is executed; if they are not offset and the base is rotated, step S22 is executed. If there is no deviation and the base does not rotate, step S2 is not performed.

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