一种Co基有机配位纳米颗粒及其制备方法、光刻胶组合物及其应用
By preparing a composition of Co-based organic coordination nanoparticles and photoresist, the problems of large edge roughness and low resolution of traditional photoresist patterns were solved, achieving high-resolution and low-line roughness photolithography effect, which is suitable for electron beam, mid-ultraviolet, deep ultraviolet and extreme ultraviolet photoresists.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUARUI CORE MATERIAL (WUXI) TECH CO LTD
- Filing Date
- 2023-06-27
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional photoresist patterns have large edge roughness and low resolution, making it difficult to meet the semiconductor manufacturing process's demand for smaller feature sizes. Furthermore, the complex composition of photoresist results in a wide size distribution, affecting the control of photoresist patterns and causing defects.
Co-based organic coordination nanoparticles were used to synthesize Co12(C6H5COO)12(CH3C2N2H3)12(CH3COO)18(H2O)6 or Co2(C7H7COO)4(CH3C2N2H3)2 nanoparticles through specific ratios and preparation methods. These nanoparticles were then combined with photoinitiators and organic dispersing solvents to form a photoresist composition. Pattern development was achieved by utilizing changes in solubility under light conditions.
It achieves high-resolution, low-line-roughness photolithography performance, improves the sensitivity and pattern control of photoresists, and is suitable for electron beam, mid-ultraviolet, deep ultraviolet and extreme ultraviolet photoresists.
Smart Images
Figure CN119241603B_ABST