A method of polishing cemented carbide

Abstract

The application provides a cemented carbide polishing method, which comprises the following steps: clamping the cemented carbide on a machine tool, performing rough polishing treatment on the surface of the cemented carbide by using abrasive sandpaper, so that annular lines are formed on the surface of the cemented carbide, and then performing fine polishing treatment on the cemented carbide by using a polishing wheel coated with polishing paste. Through the rough polishing and fine polishing of the cemented carbide in sequence, the surface roughness of the alloy is effectively reduced, the surface gloss of the alloy is improved, and the polishing quality is improved.

Description

Technical Field

[0001] This invention belongs to the field of material polishing technology and relates to a polishing method for cemented carbide. Background Technology

[0002] Hard alloys are widely used in the field of semiconductor sputtering targets. A good initial surface condition of the sputtering target is a prerequisite for obtaining excellent thin films, requiring excellent uniformity, low abnormal discharge, and small particle generation. However, due to the high hardness and wear resistance of hard alloys, the surface polishing process is quite difficult.

[0003] Traditionally, the surface quality of cemented carbide blanks is controlled by lathe machining. Due to the hard and brittle nature of cemented carbide, high-quality turning tools are required, and tool wear is high. Furthermore, problems such as chipping and corner breakage are prone to occur during machining, resulting in poor machining stability. While rough machining on a grinding machine followed by belt polishing can significantly improve the surface, the belt polishing leaves noticeable marks and exhibits uneven gloss.

[0004] However, existing technologies mostly employ CMP polishing for cemented carbide processing, which is costly, time-consuming, and involves complex and difficult-to-operate processes. Therefore, simplifying the polishing process for cemented carbide while achieving a uniform surface finish has become a challenge. Summary of the Invention

[0005] In view of the shortcomings of the existing technology, the purpose of this invention is to provide a polishing method for cemented carbide, which has high stability, and the polished cemented carbide surface has uniform texture, high gloss and low roughness.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] This invention provides a polishing method for cemented carbide, the polishing method comprising:

[0008] The cemented carbide is clamped on the machine tool, and the surface of the cemented carbide is rough polished with abrasive paper to form a ring pattern on the surface of the cemented carbide.

[0009] The carbide is then finely polished using a polishing wheel coated with polishing paste.

[0010] This invention first uses abrasive paper for rough polishing, and then uses a combination of polishing wheel and polishing paste for fine polishing, resulting in uniform annular textures, which effectively reduces the surface roughness of cemented carbide and improves surface quality.

[0011] The polishing method provided by this invention has a wide range of applications. It does not require specific shape or size of cemented carbide and is suitable for polishing cemented carbide materials of any type and size. The clamping tools on the machine tool can be adjusted according to the specific shape and size of the cemented carbide material.

[0012] As a preferred embodiment of the present invention, in the rough polishing process, the rotational speed of the machine tool is 300-600 r / min, for example, it can be 300 r / min, 310 r / min, 320 r / min, 350 r / min, 380 r / min, 400 r / min, 410 r / min, 420 r / min, 450 r / min, 480 r / min, 500 r / min, 510 r / min, 520 r / min, 550 r / min, 560 r / min, or 580 r / min, but it is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0013] As a preferred embodiment of the present invention, the abrasive paper has a mesh size of 200 to 600, for example, it can be 200 mesh, 220 mesh, 250 mesh, 300 mesh, 350 mesh, 380 mesh, 400 mesh, 450 mesh, 500 mesh, 520 mesh, 550 mesh or 600 mesh, but is not limited to the listed values, other unlisted values ​​within this range are also applicable.

[0014] Preferably, the abrasive paper includes any one of diamond sandpaper, alumina sandpaper, brown corundum sandpaper, ceramic corundum sandpaper, zirconium corundum sandpaper, or silicon carbide sandpaper.

[0015] As a preferred embodiment of the present invention, after the rough polishing treatment, the surface roughness Ra of the cemented carbide is 0.2 to 0.3 μm, for example, it can be 0.2 μm, 0.21 μm, 0.22 μm, 0.23 μm, 0.24 μm, 0.25 μm, 0.26 μm, 0.27 μm, 0.28 μm, 0.29 μm or 0.3 μm, but it is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0016] As a preferred embodiment of the present invention, the Vickers hardness of the cemented carbide is >1000HV.

[0017] As a preferred embodiment of the present invention, the polishing method further includes: during the fine polishing process, adding an auxiliary agent to the surface of the polishing wheel.

[0018] In this invention, an auxiliary agent is continuously added to the polishing wheel coated with polishing paste during the fine polishing process. This can cool the wheel down and also make the polishing paste evenly dispersed, thereby improving the polishing effect.

[0019] Preferably, the auxiliary agent is alcohol.

[0020] Preferably, the concentration of the alcohol is 90-95%, for example, it can be 90%, 91%, 92%, 93%, 94% or 95%, but it is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0021] Preferably, the dropping rate of the adjuvant is 60 to 90 drops / min, for example, it can be 60 drops / min, 62 drops / min, 65 drops / min, 66 drops / min, 68 drops / min, 70 drops / min, 72 drops / min, 75 drops / min, 76 drops / min, 78 drops / min, 80 drops / min, 82 drops / min, 85 drops / min, 86 drops / min, 88 drops / min or 90 drops / min, but is not limited to the listed values, other unlisted values ​​within this range are also applicable.

[0022] As a preferred embodiment of the present invention, the grinding paste comprises abrasive particles and a dispersion liquid.

[0023] Preferably, the particle size of the abrasive grains is 0.1 to 0.2 μm, for example, it can be 0.1 μm, 0.11 μm, 0.12 μm, 0.13 μm, 0.14 μm, 0.15 μm, 0.16 μm, 0.17 μm, 0.18 μm, 0.19 μm or 0.2 μm, but it is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0024] Preferably, the coating thickness of the polishing paste is 0.2 to 0.6 mm, for example, it can be 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm, 0.5 mm, 0.55 mm or 0.6 mm, but it is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0025] Preferably, the abrasive grains comprise any one or a combination of at least two of diamond, alumina, brown fused alumina, and zirconium fused alumina. Typical but non-limiting combinations include: a combination of diamond and alumina, a combination of alumina and brown fused alumina, a combination of brown fused alumina and zirconium fused alumina, a combination of diamond and brown fused alumina, a combination of diamond, brown fused alumina, and zirconium fused alumina, etc.

[0026] Preferably, the dispersion is water and / or glycerol.

[0027] As a preferred embodiment of the present invention, the rotational speed of the polishing wheel is 300 to 600 r / min, for example, it can be 300 r / min, 310 r / min, 320 r / min, 350 r / min, 380 r / min, 400 r / min, 410 r / min, 420 r / min, 450 r / min, 480 r / min, 500 r / min, 510 r / min, 520 r / min, 550 r / min, 560 r / min, 580 r / min or 600 r / min, but is not limited to the listed values, other unlisted values ​​within this range are also applicable.

[0028] Preferably, the diameter of the polishing wheel is 100-150mm, for example, it can be 100mm, 105mm, 110mm, 125mm, 115mm, 120mm, 125mm, 130mm, 135mm, 140mm, 145mm or 150mm, but it is not limited to the listed values, and other unlisted values ​​within this range are also applicable.

[0029] Preferably, the polishing wheel is a wool wheel.

[0030] This invention does not specifically limit the type of wool wheel. Split-type wool wheels or pure wool wheels commonly used by those skilled in the art can be used. They can play a good buffering role in the polishing process and achieve the grinding and polishing effect on the surface of cemented carbide.

[0031] As a preferred embodiment of the present invention, the polishing time is 60 to 180 minutes, for example, it can be 60 minutes, 80 minutes, 90 minutes, 100 minutes, 110 minutes, 120 minutes, 130 minutes, 140 minutes, 150 minutes, 160 minutes, 170 minutes or 180 minutes, but it is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0032] Preferably, during the fine polishing process, polishing paste is applied to the surface of the polishing wheel every 20 to 30 minutes.

[0033] The interval for reapplying polishing paste can be 20 min, 21 min, 22 min, 23 min, 24 min, 25 min, 26 min, 27 min, 28 min, 29 min or 30 min, but is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0034] As a preferred embodiment of the present invention, after the fine polishing treatment, the surface roughness Ra of the cemented carbide is less than 0.2 μm.

[0035] This invention achieves uniform surface texture, high gloss, and low roughness by sequentially performing coarse polishing and fine polishing on cemented carbide, thereby effectively improving the surface quality of cemented carbide.

[0036] The numerical range described in this invention includes not only the point values ​​listed above, but also any point values ​​within the numerical ranges not listed above. Due to space limitations and for the sake of brevity, this invention will not exhaustively list all the specific point values ​​included in the range.

[0037] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0038] This invention first uses abrasive paper for rough polishing, and then uses a combination of polishing wheel and polishing paste for fine polishing. This simplifies the process, has high stability, and produces uniform annular textures, effectively reducing the surface roughness of cemented carbide and improving surface gloss. Detailed Implementation

[0039] The technical solution of the present invention will be further illustrated below through specific embodiments.

[0040] This invention provides a polishing method for cemented carbide, the polishing method comprising the following steps:

[0041] (1) The cemented carbide is clamped on the machine tool, and the Vickers hardness of the cemented carbide is >1000HV;

[0042] (2) The surface of the cemented carbide is rough polished with abrasive paper to form annular patterns on the surface of the cemented carbide, so that the surface roughness Ra of the cemented carbide is 0.2 to 0.3 μm;

[0043] The machine tool has a rotation speed of 300-600 r / min and the abrasive paper has a mesh size of 200-600. The abrasive paper includes any one of diamond abrasive paper, alumina abrasive paper, brown corundum abrasive paper, ceramic corundum abrasive paper, zirconium corundum abrasive paper or silicon carbide abrasive paper.

[0044] (3) The cemented carbide is then finely polished for 60 to 180 minutes using a polishing wheel coated with polishing paste. During the fine polishing process, an auxiliary agent is dropped onto the surface of the polishing wheel to cool it down and make the polishing paste evenly dispersed. Every 20 to 30 minutes, polishing paste is applied to the surface of the polishing wheel to make the surface roughness Ra of the cemented carbide <0.2μm.

[0045] The polishing wheel has a rotational speed of 300–600 r / min and a diameter of 100–150 mm. The polishing wheel is a wool wheel. The auxiliary agent is preferably alcohol with a concentration of 90–95%, and the droplet rate of the auxiliary agent is 60–90 drops / min. The polishing paste comprises abrasive grains and a dispersion liquid. The abrasive grains have a particle size of 0.1–0.2 μm, and the coating thickness of the polishing paste is 0.2–0.6 mm. Preferably, the abrasive grains comprise any one or a combination of at least two of diamond, alumina, brown corundum, and zirconium corundum. The dispersion liquid is water and / or glycerin.

[0046] Example 1

[0047] This embodiment provides a polishing method for cemented carbide, specifically including the following steps for polishing tungsten-silicon alloys:

[0048] (1) The tungsten-silicon alloy material is clamped on the machine tool, and the Vickers hardness of the tungsten-silicon alloy is >1000HV;

[0049] (2) Use 400-mesh diamond sandpaper to rough polish the surface of the tungsten-silicon alloy, so that the surface of the tungsten-silicon alloy forms a ring pattern and the roughness Ra is 0.25μm, and keep the machine tool speed at 350r / min.

[0050] (3) The tungsten-silicon alloy was then finely polished for 60 minutes using a wool wheel coated with polishing paste. The speed of the wool wheel was 500 r / min and the diameter of the polishing wheel was 120 mm. During the fine polishing process, 95% alcohol was added to the surface of the wool wheel at a rate of 65 drops / min to cool it down and to ensure that the polishing paste was evenly dispersed. Every 25 minutes, polishing paste was applied to the surface of the wool wheel to maintain a coating thickness of 0.5 mm. The polishing paste used consisted of diamond abrasive grains and glycerin, and the diamond abrasive grains had a particle size of 0.15 μm.

[0051] In this embodiment, the surface roughness Ra of the tungsten-silicon alloy after fine polishing is <0.2μm, and the surface gloss is high.

[0052] Example 2

[0053] This embodiment provides a polishing method for cemented carbide, specifically including the following steps for polishing tungsten-silicon alloys:

[0054] (1) The tungsten-silicon alloy material is clamped on the machine tool, and the Vickers hardness of the tungsten-silicon alloy is >1000HV;

[0055] (2) The surface of the tungsten-silicon alloy was rough polished with 300-mesh diamond sandpaper to form annular patterns on the surface of the tungsten-silicon alloy, and the roughness Ra was 0.2μm. The machine tool speed was kept at 400r / min.

[0056] (3) The tungsten-silicon alloy was then finely polished for 120 minutes using a wool wheel coated with polishing paste. The speed of the wool wheel was 600 r / min and the diameter of the polishing wheel was 120 mm. During the fine polishing process, 95% alcohol was added to the surface of the wool wheel at a rate of 60 drops / min to cool it down and to ensure that the polishing paste was evenly dispersed. Every 20 minutes, polishing paste was applied to the surface of the wool wheel to maintain a coating thickness of 0.3 mm. The polishing paste used consisted of diamond abrasive grains and glycerin, and the diamond abrasive grains had a particle size of 0.12 μm.

[0057] In this embodiment, the surface roughness Ra of the tungsten-silicon alloy after fine polishing is <0.18μm, and the surface gloss is high.

[0058] Example 3

[0059] This embodiment provides a polishing method for cemented carbide, specifically including the following steps for polishing tungsten-silicon alloys:

[0060] (1) The tungsten-silicon alloy material is clamped on the machine tool, and the Vickers hardness of the tungsten-silicon alloy is >1000HV;

[0061] (2) Use 200-mesh diamond sandpaper to rough polish the surface of the tungsten-silicon alloy, so that the surface of the tungsten-silicon alloy forms a ring pattern and the roughness Ra is 0.2μm, and keep the machine tool speed at 550r / min.

[0062] (3) The tungsten-silicon alloy was then finely polished for 90 minutes using a wool wheel coated with polishing paste. The speed of the wool wheel was 450 r / min and the diameter of the polishing wheel was 110 mm. During the fine polishing process, 95% alcohol was added to the surface of the wool wheel at a rate of 80 drops / min to cool it down and to ensure that the polishing paste was evenly dispersed. Every 30 minutes, polishing paste was applied to the surface of the wool wheel to maintain a coating thickness of 0.5 mm. The polishing paste used consisted of diamond abrasive grains and glycerin, and the diamond abrasive grains had a particle size of 0.16 μm.

[0063] In this embodiment, the surface roughness Ra of the tungsten-silicon alloy after fine polishing is <0.16μm, and the surface gloss is high.

[0064] Example 4

[0065] This embodiment provides a polishing method for cemented carbide, specifically including the following steps for polishing tungsten-silicon alloys:

[0066] (1) The tungsten-silicon alloy material is clamped on the machine tool, and the Vickers hardness of the tungsten-silicon alloy is >1000HV;

[0067] (2) Use 500-mesh diamond sandpaper to perform rough polishing on the surface of the tungsten-silicon alloy, so that the surface of the tungsten-silicon alloy forms annular patterns and the roughness Ra is 0.2μm, and keep the machine tool speed at 450r / min.

[0068] (3) The tungsten-silicon alloy was then finely polished for 180 minutes using a wool wheel coated with polishing paste. The speed of the wool wheel was 600 r / min and the diameter of the polishing wheel was 110 mm. During the fine polishing process, 95% alcohol was added to the surface of the wool wheel at a rate of 90 drops / min to cool it down and to ensure that the polishing paste was evenly dispersed. Every 20 minutes, polishing paste was applied to the surface of the wool wheel to maintain a coating thickness of 0.6 mm. The polishing paste used consisted of diamond abrasive grains and glycerin, and the diamond abrasive grains had a particle size of 0.14 μm.

[0069] In this embodiment, the surface roughness Ra of the tungsten-silicon alloy after fine polishing is <0.16μm, and the surface gloss is high.

[0070] Example 5

[0071] This embodiment provides a polishing method for cemented carbide, which polishes tungsten-silicon alloy. The difference from Embodiment 1 is that no alcohol is added during the fine polishing process, while the rest of the steps are the same as in Embodiment 1.

[0072] The surface roughness Ra of the tungsten-silicon alloy after fine polishing in this embodiment is <0.2μm, and the uniformity of the surface texture is lower than that of the tungsten-silicon alloy after treatment in Example 1.

[0073] Example 6

[0074] This embodiment provides a polishing method for cemented carbide, which polishes tungsten-silicon alloy. The difference from Embodiment 2 is that no alcohol is added during the fine polishing process, while the rest of the steps are the same as in Embodiment 2.

[0075] The surface roughness Ra of the tungsten-silicon alloy after fine polishing in this embodiment is <0.2μm, and the uniformity of the surface texture is lower than that of the tungsten-silicon alloy after treatment in Example 2.

[0076] Comparative Example 1

[0077] This comparative example provides a polishing method for cemented carbide, which polishes a tungsten-silicon alloy. The difference from Example 1 is that the tungsten-silicon alloy is not finely polished, but the rest of the method steps are the same as in Example 1.

[0078] In this comparative example, the surface roughness Ra of the polished tungsten-silicon alloy was 0.25 μm, and the surface gloss was low.

[0079] Comparative Example 2

[0080] This comparative example provides a polishing method for cemented carbide, which polishes a tungsten-silicon alloy. The difference from Example 2 is that the tungsten-silicon alloy is not finely polished, but the rest of the method steps are the same as in Example 2.

[0081] In this comparative example, the surface roughness Ra of the polished tungsten-silicon alloy was 0.2 μm, and the surface gloss was low.

[0082] Comparative Example 3

[0083] This comparative example provides a polishing method for cemented carbide, which polishes a tungsten-silicon alloy. The difference from Example 3 is that the tungsten-silicon alloy is not finely polished, but the rest of the method steps are the same as in Example 3.

[0084] In this comparative example, the surface roughness Ra of the polished tungsten-silicon alloy was 0.2 μm, and the surface gloss was low.

[0085] Comparative Example 4

[0086] This comparative example provides a polishing method for cemented carbide, which polishes a tungsten-silicon alloy. The difference from Example 1 is that the tungsten-silicon alloy is not subjected to rough polishing, while the rest of the method steps are the same as in Example 1.

[0087] In this comparative example, the surface roughness Ra of the polished tungsten-silicon alloy was 0.22 μm, and the uniformity of the alloy surface texture was poor.

[0088] Comparative Example 5

[0089] This comparative example provides a polishing method for cemented carbide, which polishes a tungsten-silicon alloy. The difference from Example 2 is that the tungsten-silicon alloy is not subjected to rough polishing, while the rest of the method steps are the same as in Example 2.

[0090] In this comparative example, the surface roughness Ra of the polished tungsten-silicon alloy was 0.2 μm, and the surface texture uniformity was poor.

[0091] Comparative Example 6

[0092] This comparative example provides a polishing method for cemented carbide, which polishes a tungsten-silicon alloy. The difference from Example 3 is that the tungsten-silicon alloy is not subjected to rough polishing, while the rest of the method steps are the same as in Example 3.

[0093] In this comparative example, the surface roughness Ra of the polished tungsten-silicon alloy was 0.22 μm, and the surface texture uniformity was poor.

[0094] This invention first uses abrasive paper for rough polishing, and then uses a combination of wool wheel and abrasive paste for fine polishing. During the fine polishing process, the coating thickness of the abrasive paste is maintained, and alcohol is added for cooling, which also improves the uniformity of the abrasive paste. This results in a cemented carbide with uniform texture, high gloss, and roughness Ra < 0.2 μm.

[0095] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. A method of polishing cemented carbide, characterized in that The polishing method includes: The cemented carbide is clamped on the machine tool, and the surface of the cemented carbide is rough polished with abrasive paper to form a ring-shaped texture on the surface of the cemented carbide. After the rough polishing treatment, the surface roughness Ra of the cemented carbide is 0.2~0.3μm; Then, the carbide is finely polished using a polishing wheel coated with polishing paste. During the fine polishing process, polishing paste is applied to the surface of the polishing wheel every 20 to 30 minutes, and the rotation speed of the polishing wheel is 300 to 600 r / min; The polishing method further includes: during the fine polishing process, adding an auxiliary agent to the surface of the polishing wheel, wherein the dripping rate of the auxiliary agent is 60-90 drops / min; The grinding paste comprises abrasive particles and a dispersion. The abrasive grains are any one or a combination of at least two of diamond, brown corundum and zirconium corundum. The coating thickness of the polishing paste is 0.2~0.6mm; After the fine polishing process, the surface roughness Ra of the cemented carbide is less than 0.2 μm.

2. The polishing method according to claim 1, characterized in that, In the rough polishing process, the machine tool rotates at a speed of 300~600 r / min.

3. The polishing method according to claim 1, characterized in that, The abrasive paper has a mesh size of 200 to 600.

4. The polishing method according to claim 1, characterized in that, The abrasive paper includes any one of diamond sandpaper, alumina sandpaper, brown corundum sandpaper, ceramic corundum sandpaper, zirconium corundum sandpaper, or silicon carbide sandpaper.

5. The polishing method according to claim 1, characterized in that, The Vickers hardness of the cemented carbide is >1000HV.

6. The polishing method according to claim 1, characterized in that, The auxiliary agent is alcohol.

7. The polishing method according to claim 6, characterized in that, The concentration of the alcohol is 90-95%.

8. The polishing method according to claim 1, characterized in that, The abrasive grains have a particle size of 0.1~0.2μm.

9. The polishing method according to claim 1, characterized in that, The dispersion is water and / or glycerol.

10. The polishing method according to claim 1, characterized in that, The diameter of the polishing wheel is 100~150mm.

11. The polishing method according to claim 1, characterized in that, The polishing wheel is a wool wheel.

12. The polishing method according to claim 1, characterized in that, The fine polishing process takes 60 to 180 minutes.