Display device

Abstract

A display device is provided. The display device includes a first substrate including a first surface and a second surface facing each other and having a rigid material, a second substrate on the first surface of the first substrate and having a flexible material, and a display layer on the second substrate and including at least one inorganic film and a plurality of light emitting elements, the first substrate further includes a first side surface located between the first surface and the second surface and a first inclined surface located between the first surface and the first side surface at an edge of a bending region where the second substrate is bent, and the at least one inorganic film does not overlap the first inclined surface.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0085573 filed in the Korean Intellectual Property Office on July 3, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] Aspects of some embodiments of the present disclosure relate to a display device and a method of manufacturing the display device. Background Art

[0004] As the information-oriented society evolves, consumer demand for display devices continues to increase. Display devices include flat panel display devices such as liquid crystal display devices, field emission display devices, and light emitting display devices.

[0005] For example, a display device generally includes a display area for displaying an image and a non-display area around the display area. Such a non-display area is a dead zone. Recently, the width of the dead zone has been continuously reduced in order to make the viewer more immersed in the content displayed on the display area and to increase the aesthetics of the display device.

[0006] In order to reduce the width of the non-display area, a bending area may be formed between the pad area and the display area, and the pad area may be positioned below the display panel when the bending area is bent. To this end, a substrate made of a flexible material that can be bent is used. As the size of the substrate increases, a substrate made of a rigid material may also be included to maintain the shape.

[0007] The above information disclosed in this Background section is only for enhancement of background understanding and therefore the information discussed in this Background section does not necessarily constitute prior art. Summary of the invention

[0008] Aspects of some embodiments of the present disclosure include a display device in which the width of a dead zone is relatively reduced and a method of manufacturing the display device.

[0009] Aspects of some embodiments of the present disclosure also include a display device in which an edge in the bending region is spaced apart from an end point of an inorganic film group of a display panel in consideration of expansion of the bending region due to undercutting, and a method of manufacturing the display device.

[0010] Aspects of some embodiments of the present disclosure also include a display device and a method of manufacturing a display device that can prevent or reduce cracks that may occur in an inorganic film of a display panel due to expansion of a bent area due to undercutting and can suppress operational failures of the display device caused by such cracks.

[0011] It should be noted that the characteristics of the embodiments according to the present disclosure are not limited to the above-mentioned characteristics; and other objects of the present disclosure will be apparent to those skilled in the art through the following description.

[0012] According to some embodiments of the present disclosure, a display device includes: a first substrate including a first surface and a second surface facing each other and having a rigid material, a second substrate on the first surface of the first substrate and having a flexible material, and a display layer on the second substrate and including at least one inorganic film and a plurality of light-emitting elements, wherein the first substrate also includes a first side surface between the first surface and the second surface and a first inclined surface between the first surface and the first side surface at the edge of a bent region where the second substrate is bent, and the at least one inorganic film does not overlap with the first inclined surface.

[0013] According to some embodiments, at least one inorganic film does not overlap the bending region.

[0014] According to some embodiments, the first substrate further includes an opening exposing the second substrate, and an edge of the bent region is positioned on each of two sides of the opening.

[0015] According to some embodiments, an outermost end of the at least one inorganic film adjacent to the bent region is spaced apart a first distance in a horizontal direction from a boundary where the first inclined surface and the first surface meet.

[0016] According to some embodiments, an end point at an edge of the first substrate in the bending region is spaced apart from an outermost end of the at least one inorganic film by a second distance in a horizontal direction.

[0017] According to some embodiments, a length of the first inclined surface in the horizontal direction is a first length, and the second distance is equal to a sum of the first distance and the first length.

[0018] According to some embodiments, the minimum value of the second distance is equal to the sum of the first distance and the average value of the first length.

[0019] According to some embodiments, the minimum value of the second distance is equal to 88 μm.

[0020] According to some embodiments, the first distance is equal to 14.2 μm, and the average value of the first length is equal to 73.8 μm.

[0021] According to some embodiments, the distance between the endpoints of the edge of the first substrate in the bending region is a third distance, and the maximum value of the second distance satisfies the following Formula 1: Max(D2)=μ(L1)+3σ(L1)+3σ(D3), and Max(D2) represents the maximum value of the second distance, μ(L1) represents the average value of the first length, σ(L1) represents the deviation of the first length, and σ(D3) represents the deviation of the third distance.

[0022] According to some embodiments, the maximum value of the second distance is equal to 415 μm.

[0023] According to some embodiments, the average value of the first length is 73.8 μm, and the deviation of the first length is 12.1 μm.

[0024] According to some embodiments, the first distance satisfies the following Formula 2: D1=3σ(L1)+3σ(D3), where D1 represents the first distance.

[0025] According to some embodiments, in a process of etching the first substrate positioned in the curved region, a deviation of the third distance satisfies the following Formula 3: And among them, σ 1 represents the central axis deviation of the plotter configured to remove a portion of the protective film attached on the second surface of the first substrate, and σ 2 Denotes a deviation of a center axis of an etchant supplier configured to etch a first substrate.

[0026] According to some embodiments, the deviation of the third distance is equal to 101.5 μm.

[0027] According to some embodiments, the central axis deviation of the plotter is 48.22 μm, and the central axis deviation of the etchant supplier is 89.32 μm.

[0028] According to some embodiments, the display device may further include an encapsulation layer on the display layer and including at least one inorganic encapsulation film, wherein the at least one inorganic encapsulation film does not overlap with the first inclined surface.

[0029] According to some embodiments, the display device may further include a sensor layer on the encapsulation layer and including at least one sensor inorganic film, wherein the at least one sensor inorganic film does not overlap with the first inclined surface.

[0030] According to some embodiments, the first substrate includes glass, and the second substrate includes a polymer resin.

[0031] According to some embodiments of the present disclosure, a display device includes: a first substrate including a first surface and a second surface facing each other and having a rigid material, a second substrate on the first surface of the first substrate and having a flexible material, a display layer on the second substrate and including at least one display inorganic film and a plurality of light-emitting elements, an encapsulation layer on the display layer and including at least one inorganic encapsulation film, and a sensor layer on the encapsulation layer and including at least one sensor inorganic film, wherein the at least one display inorganic film, the at least one inorganic encapsulation film and the at least one sensor inorganic film constitute an inorganic film group, the first substrate also includes a first side surface positioned between the first surface and the second surface and a first inclined surface positioned between the first surface and the first side surface at the edge of the bent area where the second substrate is bent, and the inorganic film group does not overlap with the first inclined surface.

[0032] According to some embodiments, the inorganic film group does not overlap with the bending region.

[0033] According to some embodiments, the display device may also include a display area in which a plurality of light emitting elements are positioned, a non-display area between the display area and the bending area, a first dam between the plurality of light emitting elements and the bending area, and a dam structure in at least one of the non-display area and the bending area.

[0034] According to some embodiments, the inorganic film group includes a first inorganic film group and a second inorganic film group, the first inorganic film group includes at least one display inorganic film, the second inorganic film group includes at least one inorganic encapsulation film and at least one sensor inorganic film, the first inorganic film group does not overlap with the embankment structure, and the second inorganic film group overlaps with the embankment structure.

[0035] According to some embodiments, the inorganic film group does not overlap with the bank structure.

[0036] According to some embodiments, an outermost end of the inorganic film group adjacent to the bent region is spaced apart by a first distance in a horizontal direction from a boundary where the first inclined surface and the first surface meet.

[0037] According to some embodiments, an end point at the edge of the first substrate in the bending region is spaced apart from an outermost end of the inorganic film group by a second distance in a horizontal direction.

[0038] According to some embodiments, a length of the first inclined surface in the horizontal direction is a first length, and the second distance is equal to a sum of the first distance and the first length.

[0039] According to some embodiments, the minimum value of the second distance is equal to the sum of the first distance and the average value of the first length.

[0040] According to some embodiments, the distance between the endpoints of the edge of the first substrate in the bending region is a third distance, and the maximum value of the second distance satisfies the following Formula 1: Max(D2)=μ(L1)+3σ(L1)+3σ(D3), and Max(D2) represents the maximum value of the second distance, μ(L1) represents the average value of the first length, σ(L1) represents the deviation of the first length, and σ(D3) represents the deviation of the third distance.

[0041] According to some embodiments, the first distance satisfies the following Formula 2: D1=3σ(L1)+3σ(D3), where D1 represents the first distance.

[0042] According to some embodiments, in a process of etching the first substrate positioned in the curved region, a deviation of the third distance satisfies the following Formula 3: And among them, σ 1 represents the central axis deviation of the plotter configured to remove a portion of the protective film attached on the second surface of the first substrate, and σ 2 Denotes a deviation of a center axis of an etchant supplier configured to etch a first substrate.

[0043] According to some embodiments of the present disclosure, the width of a dead zone of a display device can be relatively reduced.

[0044] According to some embodiments of the present disclosure, considering that the bending area is expanded due to the undercut, an edge in the bending area can be spaced apart from an end point of an inorganic film group of a display panel in a display device.

[0045] According to some embodiments of the present disclosure, it may be possible to prevent or reduce cracks that may occur in an inorganic film of a display panel in a display device due to expansion of a bent region due to undercutting and suppress operational failure of the display device due to such cracks.

[0046] It should be noted that the characteristics of the embodiments according to the present disclosure are not limited to the above-mentioned characteristics, and other characteristics of the embodiments according to the present disclosure will be more obvious to those skilled in the art through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] The above and other aspects and features according to embodiments of the present disclosure will become more apparent by describing aspects of some embodiments of the present disclosure in more detail with reference to the accompanying drawings.

[0048] Figure 1 is a perspective view showing a display device according to some embodiments of the present disclosure.

[0049] Figure 2 is a plan view showing a display panel and a driver IC according to some embodiments of the present disclosure.

[0050] Figure 3 is a perspective view showing a display device according to some embodiments of the present disclosure.

[0051] Figure 4 is a cross-sectional view illustrating an example of a display area of ​​a display device according to some embodiments of the present disclosure.

[0052] Figure 5 is along Figure 1 A cross-sectional view taken along line X1-X1'.

[0053] Figure 6 is a diagram showing the bending state of some embodiments of the present disclosure. Figure 5 A cross-sectional view of a display device.

[0054] Figure 7 is a cross-sectional view schematically showing a display device of the related art.

[0055] Figure 8 is to show that when it is bent Figure 7 A cross-sectional view of a display device.

[0056] Fig. 9 According to some embodiments of the present disclosure Figure 5 An enlarged view of part A of FIG.

[0057] Fig.10 : is a graph showing the distribution of the distance between the end point of the first substrate in the bending region and the end point of the inorganic film group in the experimental groups sorted by whether cracks occurred in the inorganic film.

[0058] Fig.11 is a cross-sectional view showing a portion of a display area, a non-display area, and a bending area of ​​a display device according to some embodiments of the present disclosure.

[0059] Fig.12 is a flowchart for illustrating a method of manufacturing a display device according to some embodiments of the present disclosure.

[0060] Fig.13 It is shown Fig.12 sectional view of step S100.

[0061] Fig.14 It is shown Fig.12 sectional view of step S200.

[0062] Fig.15 It is shown Fig.12 sectional view of step S300.

[0063] Fig.16 It is shown Fig.12 sectional view of step S400.

[0064] Fig.17 It is shown Fig.12 sectional view of step S500.

[0065] Fig.18 It is shown Fig.12 sectional view of step S600. DETAILED DESCRIPTION

[0066] Now, hereinafter, various aspects of some embodiments of the present invention will be described more fully with reference to the accompanying drawings in which various aspects of some embodiments of the present invention are shown. However, the present invention can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be detailed and complete, and will more fully convey the scope of embodiments according to the present invention to those skilled in the art.

[0067] It will also be understood that when a layer is referred to as being 'on' another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals refer to like components throughout the specification.

[0068] Hereinafter, various aspects of some embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings.

[0069] Figure 1 is a perspective view showing a display device according to some embodiments of the present disclosure. Figure 2 is a plan view showing a display panel and a driver IC according to some embodiments of the present disclosure.

[0070] Reference Figure 1 and Figure 2 The display device 10 according to some embodiments of the present disclosure is used to display moving images or still images. The display device 10 can be used as a display screen of portable electronic devices such as mobile phones, smart phones, tablet PCs, smart watches, watch phones, mobile communication terminals, electronic notepads, electronic books, portable multimedia players (PMPs), navigation devices, and ultra mobile PCs (UMPCs), and display screens of various products such as televisions, notebook computers, monitors, billboards, and IoT devices.

[0071] According to some embodiments of the present disclosure, the display device 10 may be a light-emitting display device, such as an organic light-emitting display device using an organic light-emitting diode, a quantum dot light-emitting display device including a quantum dot light-emitting layer, an inorganic light-emitting display device including an inorganic semiconductor, and a micro-LED display device using a micro- or nano-light-emitting diode (micro-LED or nano-LED). In the following description, the organic light-emitting display device is described as an example of the display device 10. However, it should be understood that the embodiments according to the present disclosure are not limited thereto.

[0072] The display device 10 according to some embodiments may include a display panel 100 , a driver integrated circuit (IC) 200 , and a circuit board 300 .

[0073] The display panel 100 may be formed as a rectangular plane having a long side in a first direction (x-axis direction) and a short side in a second direction (y-axis direction) intersecting the first direction (x-axis direction). Each of the corners where the long side in the first direction (x-axis direction) intersects the short side in the second direction (y-axis direction) may be formed as a right angle or may be rounded with a curvature. The shape of the display panel 100 when viewed from the top (e.g., in a plan view) is not limited to a quadrilateral shape, but may be formed in various polygonal shapes, circular shapes, or elliptical shapes.

[0074] In the accompanying drawings, the first direction (x-axis direction) and the second direction (y-axis direction) intersect each other as horizontal directions. For example, the first direction (x-axis direction) and the second direction (y-axis direction) may be orthogonal to each other. In addition, the third direction (z-axis direction) may intersect with the first direction (x-axis direction) and the second direction (y-axis direction), and may be, for example, a vertical direction orthogonal to them. In this article, the side indicated by the arrow from the first direction to each of the third directions (x-axis direction, y-axis direction, and z-axis direction) may be referred to as the first side, and the opposite side may be referred to as the second side.

[0075] The display panel 100 may be formed to be flat, but is not limited thereto according to the embodiments of the present disclosure. For example, the display panel 100 may be formed to be bent at the left and right ends, and may include a bent portion having a constant curvature or a variable curvature. In addition, the display panel 100 may be flexible so that it can be bent, curved, folded, or rolled.

[0076] The display panel 100 may include a main area MA, a bending area BA, and a pad area PDA. The main area MA may include a display area DA displaying an image and a non-display area NDA around the display area DA.

[0077] The display area DA may occupy most of the area of ​​the display panel 100. The display area DA may be positioned at the center of the display panel 100. In the display area DA, a plurality of pixels each including a plurality of emission areas may be arranged to display an image.

[0078] The non-display area NDA may be positioned adjacent to the display area DA. The non-display area NDA may be positioned on the outside of the display area DA. The non-display area NDA may surround the display area DA. The non-display area NDA may be defined as a boundary of the display panel 100.

[0079] The bending area BA may be positioned between the display area DA and the pad area PDA in the second direction (y-axis direction). The bending area BA may extend in the first direction (x-axis direction). The bending area BA may be bent so that it is positioned under the display panel 100. When the bending area BA is bent and positioned under the display panel 100, a plurality of driver ICs 200 and a circuit board 300 may be positioned under the display panel 100.

[0080] The pad area PDA may be a lower edge area of ​​the display panel 100. In the pad area PDA, display pads PD connected to the circuit board 300 and first and second driving pads connected to the driver IC 200 may be located.

[0081] In the pad area PDA, the display pads PD may be arranged to be connected to the circuit board 300. The display pads PD may be positioned at one edge of the display panel 100. For example, the display pads PD may be positioned at a lower edge of the display panel 100.

[0082] The driver IC 200 may generate a data voltage, a power voltage, a scan timing signal, etc. The driver IC 200 may output a data voltage, a power voltage, a scan timing signal, etc.

[0083] The driver IC 200 may be positioned in the pad area PDA. The driver IC 200 may be positioned between the display pad PD and the display area DA in the pad area PDA. The driver IC 200 may be attached to the pad area PDA of the display panel 100 by a chip on glass (COG) technology. Alternatively, the driver IC 200 may be attached to the circuit board 300 by a chip on plastic (COP) technology, respectively.

[0084] The circuit board 300 may be positioned on the display pad PD located at one edge of the display panel 100. The circuit board 300 may be attached to the display pad PD using a conductive adhesive member such as an anisotropic conductive film and an anisotropic conductive adhesive. Accordingly, the circuit board 300 may be electrically connected to the signal line of the display panel 100. The circuit board 300 may be a flexible printed circuit board, a flexible film such as a chip on film.

[0085] Figure 3 is a perspective view showing a display device according to some embodiments of the present disclosure.

[0086] Reference Figure 3 According to some embodiments, the shape of the display panel 100 may be the same as that of the display panel 100 according to the above reference. Figure 1 The display panel 100 of the embodiments described above has a different shape.

[0087] For example, in the display panel 100 according to some embodiments, the length of the main area MA may be longer than the length of the bending area BA and the pad area PDA in the first direction (x-axis direction). The bending area BA and the pad area PDA may protrude from a portion of one side of the main area MA.

[0088] Therefore, the shape of the display panel 100 is not limited to Figures 1 to 3 Rather, various shapes may be applied depending on the type of the display device 10 .

[0089] Figure 4 is a cross-sectional view illustrating an example of a display area of ​​a display device according to some embodiments of the present disclosure.

[0090] Reference Figure 4 , the display device 10 may include a display panel 100 , a polarizing film PF and a cover window CW.

[0091] The display panel 100 may be an organic light-emitting display panel including light-emitting elements LEL, each of which includes an organic emission layer 172. However, it should be understood that the embodiments according to the present disclosure are not limited thereto. The display panel 100 may be a light-emitting display panel such as a quantum dot light-emitting display panel including a quantum dot light-emitting layer, an inorganic light-emitting display panel including an inorganic semiconductor, and a micro-light-emitting display panel using a micro or nano light-emitting diode (micro-LED or nano-LED). In the following description, for the convenience of explanation, an organic light-emitting display panel is used as an example of the display panel 100.

[0092] The display panel 100 may include a substrate SUB, a display layer DISL, an encapsulation layer ENC, and a sensor electrode layer SENL.

[0093] The substrate SUB may include a first substrate SUB1 made of a rigid material and a second substrate SUB2 made of a polymer resin made of a flexible material.

[0094] The first substrate SUB1 may have a rigid material. For example, the first substrate SUB1 may be made of glass. The first substrate SUB1 may be formed of ultra-thin glass (UTG) having a thickness of about 500 μm or less.

[0095] The second substrate SUB2 may have a flexible material. The second substrate SUB2 may be made of a polymer resin having a thickness smaller than that of the first substrate SUB1. For example, the second substrate SUB2 may have a thickness of about 20 μm or less. The second substrate SUB2 may be formed of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and a polyimide resin. Since the second substrate SUB2 is made of a polymer resin, it may be referred to as a plastic substrate. In some embodiments, the second substrate SUB2 may have a multilayer structure.

[0096] The display layer DISL may include a thin film transistor layer TFTL including a plurality of thin film transistors TFT and an emission material layer EML including a plurality of light emitting elements LEL.

[0097] The thin film transistor layer TFTL may include a first buffer film BF1 , a thin film transistor TFT, a gate insulator 130 , a first interlayer dielectric film 141 , a capacitor Cst, a second interlayer dielectric film 142 , a first data metal layer, a first organic film 160 , a second data metal layer, and a second organic film 180 .

[0098] The first buffer film BF1 may be positioned on the substrate SUB. The first buffer film BF1 may be formed of an inorganic material such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer. Alternatively, the first buffer film BF1 may be made of a multilayer in which two or more of the silicon nitride layer, the silicon oxynitride layer, the silicon oxide layer, the titanium oxide layer, and the aluminum oxide layer are stacked on each other.

[0099] An active layer of the thin film transistor TFT including a channel region TCH, a source region TS, and a drain region TD may be positioned on the first buffer film BF1. The active layer may be made of polycrystalline silicon such as low-temperature polycrystalline silicon, single crystal silicon, amorphous silicon, or an oxide semiconductor material. When the active layer includes polycrystalline silicon or an oxide semiconductor material, the source region TS and the drain region TD in the active layer may be conductive regions doped with ions or impurities to have conductivity.

[0100] The gate insulator 130 may be positioned on the active layer of the thin film transistor TFT. The gate insulator 130 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer).

[0101] A first gate metal layer including a gate electrode TG of the thin film transistor TFT, a first capacitor electrode CAE1 of the capacitor Cst, and a scan line may be positioned on the gate insulator 130. The gate electrode TG of the thin film transistor TFT may overlap the channel region TCH in a third direction (z-axis direction). The first gate metal layer may be made of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0102] The first interlayer dielectric film 141 may be positioned on the first gate metal layer. The first interlayer dielectric film 141 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer). The first interlayer dielectric film 141 may include a plurality of inorganic layers.

[0103] The second gate metal layer including the second capacitor electrode CAE2 of the capacitor Cst may be positioned on the first interlayer dielectric film 141. The second capacitor electrode CAE2 may overlap with the first capacitor electrode CAE1 in the third direction (z-axis direction). Therefore, the capacitor Cst may be formed by the first capacitor electrode CAE1, the second capacitor electrode CAE2, and an inorganic insulating dielectric film positioned therebetween and serving as a dielectric film. The second gate metal layer may be made of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0104] The second interlayer dielectric film 142 may be positioned on the second gate metal layer. The second interlayer dielectric film 142 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer). The second interlayer dielectric film 142 may include a plurality of inorganic layers.

[0105] The first data metal layer including the first connection electrode CE1 and the data line may be positioned on the second interlayer dielectric film 142. The first connection electrode CE1 may be connected to the drain region TD through a first contact hole CT1 penetrating the gate insulator 130, the first interlayer dielectric film 141, and the second interlayer dielectric film 142. The first data metal layer may be made of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0106] The first organic film 160 may be disposed on the first connection electrode CE1 for providing a flat surface on the thin film transistor TFT having an uneven height. The first organic film 160 may be formed as an organic layer including acrylic resin, epoxy resin, phenol resin, polyamide resin, and polyimide resin.

[0107] The second data metal layer including the second connection electrode CE2 may be positioned on the first organic film 160. The second connection electrode CE2 may be connected to the first connection electrode CE1 through a second contact hole CT2 penetrating the first organic film 160. The second data metal layer may be made of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0108] The second organic film 180 may be positioned on the second connection electrode CE2. The second organic film 180 may be formed as an organic layer including, for example, acrylic resin, epoxy resin, phenol resin, polyamide resin, and polyimide resin.

[0109] It should be noted that the second data metal layer including the second link electrode CE2 and the second organic film 180 may be removed.

[0110] The emission material layer EML is positioned on the thin film transistor layer TFTL. The emission material layer EML may include a light emitting element LEL and a pixel defining film 190 .

[0111] Each of the light emitting elements LEL may include a pixel electrode 171, an emission layer 172, and a common electrode 173. In each of the emission areas EA, the pixel electrode 171, the emission layer 172, and the common electrode 173 are sequentially stacked on each other so that holes from the pixel electrode 171 and electrons from the common electrode 173 are combined with each other in the emission layer 172 to emit light. In this case, the pixel electrode 171 may be an anode, and the common electrode 173 may be a cathode.

[0112] A pixel electrode layer including a pixel electrode 171 may be formed on the second organic film 180. The pixel electrode 171 may be connected to the second connection electrode CE2 through a third contact hole CT3 penetrating the second organic film 180. The pixel electrode layer may be made of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0113] In a top emission structure in which light is emitted from the emission layer 172 toward the common electrode 173, the pixel electrode 171 may be made of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may be made of a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO / APC / ITO) to increase reflectivity. The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0114] The pixel defining film 190 may define the emission area EA of the pixel. To this end, the pixel defining film 190 may be formed on the second organic film 180 to expose a portion of the pixel electrode 171. The pixel defining film 190 may cover an edge of the pixel electrode 171. The pixel defining film 190 may be positioned inside the third contact hole CT3. In other words, the third contact hole CT3 may be filled with the pixel defining film 190. The pixel defining film 190 may be formed of an organic layer including, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0115] A spacer 191 may be positioned on the pixel defining film 190. The spacer 191 may support a mask during a process of manufacturing the emission layer 172. The spacer 191 may be formed of an organic layer including, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0116] The emission layer 172 is formed on the pixel electrode 171. The emission layer 172 may include an organic material to emit light of a specific color. For example, the emission layer 172 may include a hole transport layer, an organic material layer, and an electron transport layer. The organic material layer may include a host and a dopant. The organic material layer may include a material that emits light (e.g., set or predetermined light) and may be formed using a phosphor or a fluorescent material.

[0117] The common electrode 173 is formed on the emission layer 172. The common electrode 173 may be formed to cover the emission layer 172. The common electrode 173 may be a common layer formed across the plurality of emission areas EA. A covering layer may be formed on the common electrode 173.

[0118] In the top emission structure, the common electrode 173 may be formed of a transparent conductive material (TCP) such as ITO and IZO capable of transmitting light or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), and an alloy of magnesium (Mg) and silver (Ag). When the common electrode 173 is formed of a semi-transmissive conductive material, light extraction efficiency can be improved by using a microcavity.

[0119] The encapsulation layer ENC may be positioned on the emission material layer EML. The encapsulation layer ENC may include one or more inorganic films TFE1 and TFE3 to prevent oxygen or moisture from penetrating into the emission material layer EML. In addition, the encapsulation layer ENC may include at least one organic film to protect the emission material layer EML from particles such as dust. For example, the encapsulation layer ENC may include a first inorganic encapsulation film TFE1, an organic encapsulation film TFE2, and a second inorganic encapsulation film TFE3.

[0120] The first inorganic encapsulation film TFE1 may be positioned on the common electrode 173, the organic encapsulation film TFE2 may be positioned on the first inorganic encapsulation film TFE1, and the second inorganic encapsulation film TFE3 may be positioned on the organic encapsulation film TFE2. The first inorganic encapsulation film TFE1 and the second inorganic encapsulation film TFE3 may be made of a multilayer in which one or more inorganic layers of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked. The organic encapsulation film TFE2 may be an organic film including, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0121] The sensor electrode layer SENL may be positioned on the encapsulation layer ENC. The sensor electrode layer SENL may include a second buffer film BF2, a first bridge BE1, a first sensor insulating film TINS1, sensor electrodes TE and RE, and a second sensor insulating film TINS2.

[0122] The second buffer film BF2 may be positioned on the encapsulation layer ENC. The second buffer film BF2 may include at least one inorganic film. For example, the second buffer film BF2 may be made of a multilayer in which one or more inorganic layers of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked with each other. The second buffer film BF2 may be removed.

[0123] The first bridge BE1 may be positioned on the second buffer film BF2. The first bridge BE1 may be made of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may be made of a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO / APC / ITO).

[0124] The first sensor insulating film TINS1 may be positioned on the first bridge BE1. The first sensor insulating film TINS1 may be formed of an inorganic layer (eg, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer).

[0125] The sensor electrodes (i.e., the drive electrode TE and the sensing electrode RE) may be positioned on the first sensor insulating film TINS1. In addition, a dummy pattern may be positioned on the first sensor insulating film TINS1. The drive electrode TE, the sensing electrode RE, and the dummy pattern do not overlap with the emission area EA. The drive electrode TE, the sensing electrode RE, and the dummy pattern may be made of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may be made of a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO / APC / ITO). The drive electrode TE may be connected to the first bridge BE1 through a contact hole TCNT1 penetrating the first sensor insulating film TINS1.

[0126] The second sensor insulating film TINS2 may be positioned on the driving electrode TE, the sensing electrode RE, and the dummy pattern. The second sensor insulating film TINS2 may include at least one of an inorganic film and an organic film. The inorganic film may be a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic film may include an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and a polyimide resin.

[0127] The polarizing film PF may be positioned on the sensor electrode layer SENL. The polarizing film PF may be positioned on the display panel 100 so as to reduce reflection of external light. The polarizing film PF may include a first base member, a linear polarizer, a retardation film such as a λ / 4 (quarter wave) wave plate, and a second base member. The first base member, the retardation film, the linear polarizer, and the second base member of the polarizing film PF may be sequentially stacked on the display panel 100.

[0128] The cover window CW may be positioned on the polarizing film PF. The cover window CW may be attached to the polarizing film PF by a transparent adhesive member such as an optically clear adhesive (OCA) film.

[0129] Figure 5 is along Figure 1 A cross-sectional view taken along line X1-X1'. Figure 6 is to show that when it is bent Figure 5 A cross-sectional view of a display device according to an embodiment. Figure 7 is a cross-sectional view schematically showing a display device of the related art. Figure 8 is to show that when it is bent Figure 7 A cross-sectional view of a display device.

[0130] Reference Figures 5 to 8 In addition to the display panel 100, the polarizing film PF, the cover window CW, the driver IC 200 and the circuit board 300, the display device 10 may further include a protection layer PRTL and a panel bottom cover PB. The display panel 100 may include a substrate SUB, a display layer DISL, an encapsulation layer ENC and a sensor electrode layer SENL.

[0131] The display layer DISL, the encapsulation layer ENC, the sensor electrode layer SENL, the polarizing film PF, and the cover window CW have been described above; and thus, redundant descriptions will be omitted.

[0132] The substrate SUB may include a first substrate SUB1 made of a rigid material and a second substrate SUB2 made of a polymer resin made of a flexible material. The first substrate SUB1 may not be positioned in the bending area BA. For example, the first substrate SUB1 may include an opening BOP exposing the second substrate SUB2. That is, since the first substrate SUB1 made of a rigid material is not positioned in the bending area BA, it can be Figure 6 It is easy to bend as shown in the figure.

[0133] The protective layer PRTL may be positioned on the thin film transistor layer TFTL in the bending area BA. The protective layer PRTL may be a layer for protecting the thin film transistor layer TFTL exposed to the outside in the bending area BA. The protective layer PRTL may be formed of an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0134] The panel bottom cover PB may be positioned on the second surface of the substrate SUB of the display panel 100. The second surface of the substrate SUB may be opposite to the first surface. For example, the panel bottom cover PB may be positioned on the lower surface BS of the substrate SUB. The panel bottom cover PB may be attached to the second surface of the substrate SUB of the display panel 100 by an adhesive member. The adhesive member may be a pressure sensitive adhesive (PSA).

[0135] The panel bottom cover PB may include at least one of a light blocking member for absorbing light incident from the outside, a buffer member for absorbing external impact, and a heat dissipation member for effectively discharging heat from the display panel 100 .

[0136] like Figure 6 As shown in FIG. 1 , the driver IC 200 and the circuit board 300 may be bent so that they are positioned below the display panel 100. The circuit board 300 may be attached to the lower surface of the panel bottom cover PB by an adhesive member 310. The adhesive member 310 may be a pressure sensitive adhesive.

[0137] The display device 10 according to some embodiments may include a first side surface SS1 at an edge BEG of the bending area BA. The first side surface SS1 formed at the edge BEG of the bending area BA may be an inclined surface. The inclined surface of the first side surface SS1 may be formed by manufacturing a display device according to a method S1 (see FIG. 1 ) to be described later. Fig.12 ) Attach the first protection film PRF1 (see Fig.14 ) is formed by etching a portion of the first substrate SUB1 on the bending area BA. The edge BEG of the bending area BA may indicate that the edge BEG of the bending area BA is formed by etching a portion of the first substrate SUB1 on the bending area BA according to the method S1 (see FIG. 1 ) of manufacturing a display device to be described later. Fig.12 ) Etching the first mother substrate MSUB1 on the bending area BA (see Fig.18 ) formed by the edge.

[0138] More specifically, the first substrate SUB1 may include an upper surface US, a lower surface BS, and a first side surface SS1 and a first inclined surface IP1_1. The upper surface US of the first substrate SUB1 may be a side surface in a third direction (z-axis direction), and the lower surface BS may be a side surface in an opposite direction in the third direction (z-axis direction).

[0139] The first side surface SS1 may be positioned between the upper surface US and the lower surface BS. The first side surface SS1 may be located at the edge BEG of the bending area BA. The first side surface SS1 may be an inclined surface. According to some embodiments of the present disclosure, the angle formed between the first side surface SS1 and the upper surface US may be an acute angle, and the angle formed between the first side surface SS1 and the lower surface BS may be an obtuse angle.

[0140] The first inclined surface IP1_1 may be positioned between the upper surface US and the first side surface SS1. The first inclined surface IP1_1 may be an undercut formed between the first substrate SUB1 and the second substrate SUB2. Fig.12 ), the first inclined surface IP1_1 may be formed because the etchant penetrates into the interface between the first substrate SUB1 and the second substrate SUB2 and accordingly the first mother substrate MSUB1 is over-etched.

[0141] The first length L_IP, which is the length of the first inclined surface IP1_1 in the second direction (y-axis direction), may be equal to approximately 73.8±12.1 μm. For example, the average value of the first length L_IP may be 73.8 μm, and the deviation may be approximately 12.1 μm. In other words, the first length L_IP may be in the range of 61.7 μm to 85.9 μm. The first length L_IP, which is the length of the first inclined surface IP1_1 in the second direction (y-axis direction), may indicate the distance in the second direction (y-axis direction) from the endpoint P2 at the edge BEG of the first substrate SUB1 in the bending area BA to the boundary P1 where the first inclined surface IP1_1 intersects with the upper surface US of the first substrate SUB1.

[0142] In the display device 10 according to some embodiments, the first inclined surface IP1_1 may not overlap with the inorganic films included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL in the third direction (z-axis direction).

[0143] For example, a boundary P1 where the first inclined surface IP1_1 intersects the upper surface US of the first substrate SUB1 may not overlap with the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL. A boundary P1 where the first inclined surface IP1_1 intersects the upper surface US of the first substrate SUB1 may be spaced apart from the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL by a first distance D_EX in the second direction (y-axis direction). A process of calculating the first distance D_EX will be described later.

[0144] Accordingly, in the display device 10 according to some embodiments, cracks can be prevented from being generated in the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL. That is, the first distance D_EX may be a design tolerance for preventing cracks from being generated in the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL.

[0145] like Figure 6As shown in , since the first inclined surface IP1_1 is formed, the bending area BA may start from the boundary P1 where the first inclined surface IP1_1 intersects the upper surface US of the first substrate SUB1, rather than from the end point P2 at the edge BEG of the first substrate SUB1 in the bending area BA. For this reason, in the display device 10 according to some embodiments, the first distance D_EX is ensured so that the first inclined surface IP1_1 does not overlap with the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL, thereby preventing cracks from being generated in the inorganic film located in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL.

[0146] On the contrary, Figure 7 and Figure 8 As shown in, in the display device 10' of the related art, the end point P2 at the edge BEG of the first substrate SUB1 in the bending area BA may be spaced apart from the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL by a second distance D_IOG in the second direction (y-axis direction). In the display device 10' of the related art, the second distance D_IOG may be less than the first length L_IP which is the length of the first inclined surface IP1_1 in the second direction (y-axis direction). Accordingly, the first inclined surface IP1_1 may overlap with the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL in the third direction (z-axis direction).

[0147] In the display device 10' of the related art, even if the bending area BA is designed so that the layer is spaced apart from the end point P2 at the edge BEG of the first substrate SUB1 in the bending area BA by the second distance D_IOG, the second substrate SUB2 is bent in the main area MA due to the first inclined surface IP1_1. In other words, the portion of the second substrate SUB2 in the main area MA is also bent. Since the inorganic films included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL are relatively inflexible, cracks may occur therein when the second substrate SUB2 is bent.

[0148] On the contrary, Figure 5 and Figure 6As shown in , in the display device 10 according to some embodiments, the second distance D_IOG may be greater than the first length L_IP. For example, the second distance D_IOG may be equal to the sum of the first length L_IP and the first distance D_EX. Specifically, in the display device 10 according to some embodiments, considering the length of the first inclined surface IP1_1 and the additional design tolerance, the end point P2 of the first substrate SUB1 at the edge BEG in the bending area BA is separated from the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL by the second distance D_IOG which is the sum of the first length L_IP and the first distance D_EX, thereby preventing cracks from being generated in the inorganic film.

[0149] More specifically, the second distance D_IOG may be calculated based on the first length L_IP and the first distance D_EX. The first distance D_EX may be calculated based on the deviation of the first length L_IP and the etching tolerance. For example, the second distance D_IOG may be the sum of the first length L_IP and the first distance D_EX.

[0150] In some embodiments, the minimum value of the second distance D_IOG can be obtained by adding the minimum tolerance to the average value of the first length L_IP. In this case, the minimum tolerance may be the first distance D_EX. For example, the minimum value of the second distance D_IOG may be 88 μm obtained by adding 73.8 μm, which is the average value of the first length L_IP, to the minimum tolerance of 14.2 μm. The minimum tolerance may be greater than 12.1 μm, which is the deviation of the first length L_IP. When the etching tolerance is zero, the first distance D_EX may be calculated by additionally adding the minimum design tolerance (approximately 2 μm) to the deviation of the first length L_IP. The etching tolerance may indicate taking into account the plotter PLOT (see Equation 3 to be described later) included in Fig.15 ) of the center axis deviation and the etchant feeder (see Fig.16 ) is the design tolerance for the center axis deviation.

[0151] In some embodiments, the maximum value of the second distance D_IOG may satisfy the following equation 1:

[0152] Formula 1

[0153] Max(D2)=μ(L1)+3σ(L1)+3σ(D3)

[0154] Wherein, D2 represents the second distance D_IOG, L1 represents the first length L_IP, and D3 represents the third distance D_BOP which is the distance in the second direction (y-axis direction) between the endpoints P2 at the edge BEG of the first substrate SUB1 in the bending area BA. The maximum value of the second distance D_IOG may be equal to the sum of the average value (μ(L1)) of the first length L_IP, three times the deviation (3σ(L1)) of the first length L_IP, and three times the deviation (3σ(D3)) of the third distance D_BOP.

[0155] In this case, the first distance D_EX may satisfy the following equation 2:

[0156] Formula 2

[0157] D1=3σ(L1)+3σ(D3)

[0158] Wherein, D1 represents the value of the first distance D_EX. The first distance D_EX may be the sum of 3σ(L1) which is three times the deviation of the first length L_IP and 3σ(D3) which is three times the deviation of the third distance D_BOP. According to the three sigma rule of normal distribution, the first distance D_EX may be calculated by adding three times the deviation of the first length L_IP and three times the deviation of the third distance D_BOP.

[0159] According to a method S1 (see FIG. 1 ) of manufacturing a display device to be described later Fig.12 ), you can use a plotter (PLOT) (see Fig.15 ) of the center axis deviation and the etchant feeder (see Fig.16 ) is used to calculate the deviation (σ(D3)) of the third distance D_BOP. For example, σ(D3) as the deviation of the third distance D_BOP may satisfy the following equation 3:

[0160] Formula 3

[0161]

[0162] Among them, σ 1 Indicates the plotter PLOT (see Fig.15 )’s central axis deviation, and σ 2 Indicates the etchant supply (see Fig.16 ) of the central axis. The deviation (σ(D3)) of the third distance D_BOP may satisfy the above formula 3. According to some embodiments of the present disclosure, the plotter PLOT (see Fig.15 ) center axis deviation σ 1 can be about 48.22 μm, and the etchant supplier (see Fig.16 )’s center axis deviation σ 2The third distance D_BOP may be approximately 89.32 μm. Accordingly, the deviation of the third distance D_BOP may be approximately 101.5 μm.

[0163] According to some embodiments of the present disclosure, the maximum value of the second distance D_IOG may be about 415 μm. For example, as described above, the average value of the first length L_IP may be about 73.8 μm, the deviation of the first length L_IP may be about 12.1 μm, and the deviation of the third distance D_BOP may be about 101.5 μm. The maximum value of the second distance D_IOG may be the sum of the average value of the first length L_IP, three times the deviation of the first length L_IP, and three times the deviation of the third distance D_BOP, which may be equal to 415 μm.

[0164] In the display device 10 according to some embodiments, the first inclined surface IP1_1 does not overlap with the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL in the third direction (z-axis direction), and the endpoint P2 of the first substrate SUB1 at the edge BEG in the bending area BA is separated from the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL by a second distance D_IOG, thereby preventing cracks from being generated in the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL, and reducing the length of the dead zone.

[0165] Fig. 9 yes Figure 5 An enlarged view of part A of FIG. Fig.10 : is a graph showing the distribution of the distance between the end point of the first substrate in the bending region and the end point of the inorganic film group in the experimental groups sorted by whether cracks occurred in the inorganic film.

[0166] Combination Figure 5 and Figure 6 For reference Fig. 9 and Fig.10 , the display panel 100 may include first and second dams DAM1 and DAM2 positioned between the plurality of light emitting elements LEL and the bending area BA, and a bank structure SPC positioned in the non-display area NDA and / or the bending area BA.

[0167] The first dam DAM1 and the second dam DAM2 may be positioned at the outermost position of the display area DA or in the non-display area NDA and may be arranged to surround at least a portion of the display area DA. The first dam DAM1 and the second dam DAM2 can prevent the organic encapsulation film TFE2 of the encapsulation layer ENC from overflowing into the non-display area NDA.

[0168] Although the display panel 100 includes two dams in the example shown in the drawings, the present disclosure is not limited thereto. The display panel 100 may include one dam or three or more dams.

[0169] The first dam DAM1 may include a first sub-dam SDAM1 and a second sub-dam SDAM2, and the second dam DAM2 may include a first sub-dam SDAM1, a second sub-dam SDAM2, and a third sub-dam SDAM3. The first sub-dam SDAM1 may include the same material as the first organic film 160 and may be positioned at the same layer. The second sub-dam SDAM2 may include the same material as the second organic film 180 and may be positioned at the same layer. The third sub-dam SDAM3 may be positioned on the second sub-dam SDAM2 and may include the same material as the second sub-dam SDAM2. Alternatively, the third sub-dam SDAM3 may include the same material as the pixel defining film 190.

[0170] The height of the first dam DAM1 may be lower than that of the second dam DAM2. However, it should be understood that the present disclosure is not limited thereto. The height of the first dam DAM1 may be substantially equal to or higher than that of the second dam DAM2.

[0171] The embankment structure SPC may be positioned in the non-display area NDA and / or the bending area BA. The embankment structure SPC can protect various underlying lines extending from the display area DA to the pad area PDA via the bending area BA. In addition, during the process of stacking the layers of the display panel 100, the embankment structure SPC may provide a support space in which a mask for patterning can be placed.

[0172] The bank structure SPC may include a first bank layer SPC1, a second bank layer SPC2, and a third bank layer SPC3. The first bank layer SPC1 may include the same material as the first organic film 160. The second bank layer SPC2 may include the same material as the second organic film 180. The third bank layer SPC3 may include the same material as the second bank layer SPC2. Alternatively, the third bank layer SPC3 may include the same material as the pixel defining film 190.

[0173] The first and second dams DAM1 and DAM2 may be positioned on the first buffer film BF1, the gate insulator 130, the first and second interlayer dielectric films 141 and 142. The bank structure SPC may be positioned directly on the second substrate SUB2. Alternatively, the bank structure SPC may be positioned directly on the first buffer film BF1.

[0174] The inorganic film group 10G may include a first inorganic film group 10G1 and a second inorganic film group 10G2.

[0175] The first inorganic film group IOG1 may include a first buffer film BF1, a gate insulator 130, a first interlayer dielectric film 141, and a second interlayer dielectric film 142. The first inorganic film group IOG1 may extend from the display area DA to between the second dam DAM2 and the dyke structure SPC. For example, the first inorganic film group IOG1 may be positioned on one side of the dyke structure SPC in the second direction (y-axis direction). The first inorganic film group IOG1 may not overlap with the dyke structure SPC in the third direction (z-axis direction).

[0176] The second inorganic film group IOG2 may include a first inorganic encapsulation film TFE1, a second inorganic encapsulation film TFE3, a second buffer film BF2, a first sensor insulating film TINS1, and a second sensor insulating film TINS2. The second inorganic film group IOG2 may extend from the display area DA to the non-display area NDA across the second dam DAM2. The second inorganic film group IOG2 may cover the upper surface and the side surface of the second dam DAM2. The second inorganic film group IOG2 may extend to the top surface of the embankment structure SPC. For example, the outermost end of the second inorganic film group IOG2 may be positioned on the top surface of the embankment structure SPC adjacent to the bending area BA.

[0177] The distance in the second direction (y-axis direction) between the boundary P1 where the first inclined surface IP1_1 intersects with the upper surface US of the first substrate SUB1 and the outermost end of the inorganic film group IOG may be the first distance D_EX. For example, the distance in the second direction (y-axis direction) between the boundary P1 where the first inclined surface IP1_1 intersects with the upper surface US of the first substrate SUB1 and the outermost end of the second inorganic film group IOG2 may be the first distance D_EX. The length of the first inclined surface IP1_1 in the second direction (y-axis direction) may be the first length L_IP. The distance in the second direction (y-axis direction) between the end point P2 at the edge BEG of the first substrate SUB1 in the bending area BA and the outermost end of the inorganic film group IOG may be the second distance D_IOG. For example, the distance in the second direction (y-axis direction) between the end point P2 at the edge BEG of the first substrate SUB1 in the bending area BA and the outermost end of the second inorganic film group IOG2 may be the second distance D_IOG.

[0178] The first distance D_EX, the first length L_IP, and the second distance D_IOG have been described above and thus will not be described again to avoid redundancy.

[0179] In the display device 10 according to some embodiments, the first inclined surface IP1_1 does not overlap with the first inorganic film group IOG1 or the second inorganic film group IOG2 in the third direction (z-axis direction), and the endpoint P2 of the first substrate SUB1 at the edge BEG in the bending area BA is spaced apart from the outermost end of the inorganic film group IOG by a second distance D_IOG in the second direction (y-axis direction), thereby preventing cracks from being generated in the inorganic film included in the inorganic film group IOG and reducing the length of the dead zone.

[0180] Fig.10 The graph of FIG. 1 shows distribution of the second distance D_IOG of the display panel 100 respectively included in the experimental groups G1, G2, G2a, and G2b sorted according to whether cracks occur in the inorganic film.

[0181] The first experimental group G1 is a set of display panels 100 having no cracks in the inorganic film, and the second experimental group G2 is a set of display panels 100 having cracks in the inorganic film. (2-1) The experimental group G2a represents a set of display panels 100 in which cracks do not propagate to the circuit of the thin film transistor layer TFTL among the display panels 100 of the second experimental group G2. (2-2) The experimental group G2b represents a set of display panels 100 in which cracks propagate to the circuit of the thin film transistor layer TFTL among the display panels 100 of the second experimental group G2.

[0182] In the display panel 100 of the first experimental group G1, the second distance D_IOG may be about 88 μm or more. In the display panel 100 of the second experimental group G2, the second distance D_IOG may be about 80 μm or less. In the display panels 100 of the (2-1) experimental group G2a and the (2-2) experimental group G2b, the average value of the second distance D_IOG may be about 50 μm.

[0183] As mentioned above Figure 5 As described in the examples above, the minimum value of the second distance D_IOG calculated by summing the first length L_IP, which is the length of the first inclined surface IP1_1 in the second direction (y-axis direction), and the first distance D_EX reflecting the deviation of the first length L_IP and the etching tolerance can be equal to the minimum value of the second distance D_IOG in the display panel 100 of the first experimental group G1.

[0184] As described above, in the display device 10 according to some embodiments, cracks can be prevented from being generated in the inorganic film by calculating the minimum value of the second distance D_IOG, and the length of the dead zone can be reduced by calculating the maximum value of the second distance D_IOG.

[0185] Hereinafter, a display device according to some embodiments of the present disclosure will be described. In the following description, the same or similar elements will be represented by the same or similar reference numerals, and redundant descriptions will be omitted or briefly described.

[0186] Fig.11 is a cross-sectional view showing a portion of a display area, a non-display area, and a bending area of ​​a display device according to some embodiments of the present disclosure.

[0187] Fig.11 The display device 10 according to some embodiments shown in FIG. Fig. 9 The display device 10 according to the above-described embodiment is different in that the second inorganic film group IOG2 does not overlap with the bank structure SPC in the third direction (z-axis direction).

[0188] More specifically, the inorganic film group 10G may include a first inorganic film group 10G1 and a second inorganic film group 10G2.

[0189] The first inorganic film group IOG1 may include a first buffer film BF1, a gate insulator 130, a first interlayer dielectric film 141, and a second interlayer dielectric film 142. The first inorganic film group IOG1 may extend from the display area DA to between the second dam DAM2 and the dyke structure SPC. For example, the first inorganic film group IOG1 may be positioned on one side of the dyke structure SPC in the second direction (y-axis direction). The first inorganic film group IOG1 may not overlap with the dyke structure SPC in the third direction (z-axis direction).

[0190] The second inorganic film group IOG2 may include a first inorganic encapsulation film TFE1, a second inorganic encapsulation film TFE3, a second buffer film BF2, a first sensor insulating film TINS1, and a second sensor insulating film TINS2. Like the first inorganic film group IOG1, the second inorganic film group IOG2 may extend from the display area DA between the second dam DAM2 and the embankment structure SPC. For example, the second inorganic film group IOG2 may be positioned on one side in the second direction (y-axis direction) of the embankment structure SPC. The second inorganic film group IOG2 may not overlap with the embankment structure SPC in the third direction (z-axis direction).

[0191] The outermost end of the inorganic film group IOG may be positioned on one side of the embankment structure SPC adjacent to the bending area BA. The distance in the second direction (y-axis direction) between the boundary P1 where the first inclined surface IP1_1 intersects with the upper surface US of the first substrate SUB1 and the outermost end of the inorganic film group IOG may be the first distance D_EX. For example, the distance in the second direction (y-axis direction) between the boundary P1 and the outermost end of the first inorganic film group IOG1 may be the first distance D_EX. The length of the first inclined surface IP1_1 in the second direction (y-axis direction) may be the first length L_IP. The distance in the second direction (y-axis direction) between the end point P2 of the first substrate SUB1 at the edge BEG in the bending area BA and the outermost end of the inorganic film group IOG may be the second distance D_IOG. For example, the distance in the second direction (y-axis direction) between the end point P2 of the first substrate SUB1 at the edge BEG in the bending area BA and the outermost end of the first inorganic film group IOG1 may be the second distance D_IOG.

[0192] In the display device 10 according to some embodiments, the first inclined surface IP1_1 does not overlap with the first inorganic film group IOG1 or the second inorganic film group IOG2 in the third direction (z-axis direction), and the endpoint P2 of the first substrate SUB1 at the edge BEG in the bending area BA is spaced apart from the outermost end of the inorganic film group IOG by a second distance D_IOG in the second direction (y-axis direction), thereby preventing cracks from being generated in the inorganic film included in the inorganic film group IOG and reducing the length of the dead zone.

[0193] Although according to the above reference Fig. 9 and Fig.11 In the described embodiment, the endpoint of the lowermost inorganic film is the outermost end of each of the first inorganic film group 10G1 and the second inorganic film group 10G2, but the present disclosure is not limited thereto. For example, the endpoint of the middle layer or the uppermost inorganic film may be the outermost end of each of the first inorganic film group 10G1 and the second inorganic film group 10G2.

[0194] Hereinafter, a method of manufacturing a display device according to some embodiments of the present disclosure will be described.

[0195] Fig.12 is a flowchart for illustrating a method of manufacturing a display device according to some embodiments of the present disclosure. Fig.13 It is shown Fig.12 sectional view of step S100. Fig.14 It is shown Fig.12 sectional view of step S200. Fig.15 It is shown Fig.12 sectional view of step S300. Fig.16 It is shown Fig.12 sectional view of step S400. Fig.17 It is shown Fig.12 sectional view of step S500. Fig.18 It is shown Fig.12 sectional view of step S600.

[0196] Reference Figures 12 to 18 According to some embodiments, a method S1 for manufacturing a display device may include: first, Fig.13 As shown in FIG. 1 , a second mother substrate MSUB2 and a display layer DISL ( Fig.12 Step S100).

[0197] For example, the mother substrate MSUB may include a first mother substrate MSUB1 and a second mother substrate MSUB2. The second mother substrate MSUB2 may be formed on an upper surface US of the first mother substrate MSUB1. Subsequently, a display layer DISL may be formed on the second mother substrate MSUB2, and an encapsulation layer ENC and a sensor electrode layer SENL may also be formed.

[0198] Second, if Fig.14 As shown in FIG. 1 , a first protective film PRF1 may be attached to the lower surface BS of the first mother substrate MSUB1, and a second protective film PRF2 may be attached to the display layer DISL ( Fig.12 Step S200).

[0199] For example, the first protection film PRF1 may be attached to the entire lower surface BS of the first mother substrate MSUB1. When the encapsulation layer ENC and the sensor electrode layer SENL are positioned on the display layer DISL, the second protection film PRF2 may be attached to the sensor electrode layer SENL. The second protection film PRF2 may cover the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL together.

[0200] The first protection film PRF1 and the second protection film PRF2 may be acid-resistant films. The first protection film PRF1 can prevent the first mother substrate MSUB1 from being etched where the first protection film PRF1 is attached. The second protection film PRF2 can protect the display layer DISL from the etchant ECH.

[0201] Third, if Fig.15 As shown in FIG. 1 , the portion of the first protection film PRF1 located in the bending area BA ( Fig.12 Step S300).

[0202] For example, a plotter PLOT for removing the first protection film PRF1 may be placed on the lower surface BS of the first mother substrate MSUB1. The plotter PLOT may be a film removal device configured to cut and peel off a film.

[0203] The plotter PLOT may be positioned at the center of the bending area BA. The first center axis CL1, which is an extension of the center portion of the plotter PLOT, may be positioned to substantially coincide with the center of the bending area BA. In some implementations, the first center axis CL1 may be a distance (e.g., a set or predetermined distance) from the center of the bending area BA. In this case, the deviation of the first center axis CL1 of the plotter PLOT may be used to calculate the deviation of the third distance D_BOP as in the above formula 3.

[0204] Where the first protection film PRF1 is removed, a portion of the lower surface BS of the first mother substrate MSUB1 may be exposed in the bending area BA.

[0205] Fourth, if Fig.16 As shown in FIG. 1 , an etchant ECH is sprayed on the lower surface BS of the first mother substrate MSUB1 so that the first mother substrate MSUB1 ( Fig.12 , or step S400 in the above procedure.

[0206] For example, an etchant supplier for spraying the etchant ECH may be placed on the lower surface BS of the first mother substrate MSUB1.

[0207] The etchant feeder may be positioned at the center of the curved area BA. The second central axis CL2 as an extension of the center of the etchant feeder may be positioned to substantially coincide with the center of the curved area BA. In some implementations, the second central axis CL2 may be a distance (e.g., a set or predetermined distance) from the center of the curved area BA. In this case, the deviation of the second central axis CL2 of the etchant feeder may be used to calculate the deviation of the third distance D_BOP as in the above formula 3.

[0208] As a portion of the first mother substrate MSUB1 is removed in the bending area BA, there may be a thickness difference between the etched area and the unetched area. For example, the second thickness T2 of the first mother substrate MSUB1 in the bending area BA may be less than the first thickness T1 of the first mother substrate MSUB1 in other areas except the bending area BA. The second thickness T2 may be approximately 0.5 to 0.7 times the first thickness T1.

[0209] After etching a portion of the first mother substrate MSUB1, an inclined surface may be formed in the bent area BA. Such an inclined surface may be formed by the isotropic property of wet etching.

[0210] Fifth, if Fig.17 As shown in FIG. 1 , the entire first protection film PRF1 positioned on the lower surface BS of the first mother substrate MSUB1 may be removed. Accordingly, the entire lower surface BS ( Fig.12Step S500).

[0211] Sixth, if Fig.18 As shown in FIG. 1 , the total thickness of the first mother substrate MSUB1 can be reduced by spraying an etchant ECH onto the lower surface BS of the first mother substrate MSUB1, and the second mother substrate MSUB2 ( Fig.12 Step S600).

[0212] By spraying the etchant ECH onto the lower surface BS of the first mother substrate MSUB1, the first thickness T1 of the first mother substrate MSUB1 can be reduced to a third thickness T3. The first thickness T1 may be about 500 μm, and the third thickness T3 may be about 200 μm, but the present disclosure is not limited thereto.

[0213] Since the first mother substrate MSUB1 is etched without any mask, the entire lower surface BS of the first mother substrate MSUB1 can be uniformly etched (isotropic etching). As a result, the first side surface SS1 can be formed as an inclined surface at the edge BEG of the first mother substrate MSUB1 in the bending area BA along the inclined surface formed in step S400.

[0214] As the thickness of the first mother substrate MSUB1 decreases, the portion of the first mother substrate MSUB1 positioned at the bending area BA may be completely etched, and thus the second mother substrate MSUB2 may be exposed. Even after the second mother substrate MSUB2 is exposed, the first mother substrate MSUB1 may be over-etched to completely remove the portion of the first mother substrate MSUB1 positioned in the bending area BA. By doing so, the etchant ECH may penetrate into the interface between the second mother substrate MSUB2 and the first mother substrate MSUB1. As a result, a first inclined surface IP1_1 may be formed.

[0215] In method S1 according to some embodiments, the first inclined surface IP1_1 does not overlap with the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL in the third direction (z-axis direction), and the endpoint P2 of the first substrate SUB1 at the edge BEG in the bending area BA is separated from the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL by a second distance D_IOG, thereby preventing cracks from being generated in the inorganic film included in the display layer DISL, the encapsulation layer ENC, and the sensor electrode layer SENL, and reducing the length of the dead zone.

[0216] At the end of the detailed description, those skilled in the art will recognize that many changes and modifications can be made to the disclosed embodiments without departing substantially from the principles of the embodiments of the present disclosure. Therefore, the disclosed embodiments of the present invention are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A display device, comprising: a first substrate including a first surface and a second surface facing each other and having a rigid material; a second substrate, the second substrate being located on the first surface of the first substrate and having a flexible material; as well as a display layer, the display layer being located on the second substrate and comprising at least one inorganic film and a plurality of light emitting elements, Wherein, the first substrate further comprises, at the edge of the bending region where the second substrate is bent: a first side surface, the first side surface being located between the first surface and the second surface; and a first inclined surface, the first inclined surface being located between the first surface and the first side surface, and The at least one inorganic film does not overlap with the first inclined surface.

2. The display device according to claim 1, wherein: The at least one inorganic film does not overlap the bending region.

3. The display device according to claim 1, wherein: The first substrate further includes an opening exposing the second substrate, and The edge of the curved region is positioned on each of two sides of the opening.

4. The display device according to claim 1, wherein: An outermost end of the at least one inorganic film adjacent to the bent region is spaced apart by a first distance in a horizontal direction from a boundary where the first inclined surface and the first surface meet.

5. The display device according to claim 4, wherein: An end point of the edge of the first substrate in the bending region is spaced apart from the outermost end of the at least one inorganic film by a second distance in the horizontal direction.

6. The display device according to claim 5, wherein: The length of the first inclined surface in the horizontal direction is a first length, and the second distance is equal to the sum of the first distance and the first length.

7. The display device according to claim 6, wherein: The minimum value of the second distance is equal to the sum of the first distance and the average value of the first length.

8. The display device according to claim 7, wherein: The minimum value of the second distance is equal to 88 μm.

9. The display device according to claim 8, wherein: The first distance is equal to 14.2 μm, and the average value of the first lengths is equal to 73.8 μm.

10. The display device according to claim 6, wherein: The distance between the endpoints of the edge of the first substrate in the bending region is a third distance, The maximum value of the second distance satisfies the following formula 1: Formula 1 Max(D2)=μ(L1)+3σ(L1)+3σ(D3), and Max(D2) represents the maximum value of the second distance, μ(L1) represents the average value of the first length, σ(L1) represents the deviation of the first length, and σ(D3) represents the deviation of the third distance.

11. The display device according to claim 10, wherein: The maximum value of the second distance is equal to 415 μm.

12. The display device according to claim 11, wherein: The average value of the first length is 73.8 μm, and the deviation of the first length is 12.1 μm.

13. The display device according to claim 10, wherein: The first distance satisfies the following formula 2: Formula 2 D1=3σ(L1)+3σ(D3), Wherein, D1 represents the first distance.

14. The display device according to claim 13, wherein: In the process of etching the first substrate positioned in the curved region, the deviation of the third distance satisfies the following Formula 3: Formula 3 as well as Here, σ1 represents a central axis deviation of a plotter configured to remove a portion of a protective film attached on the second surface of the first substrate, and σ2 represents a central axis deviation of an etchant supplier configured to etch the first substrate.

15. The display device according to claim 14, wherein: The deviation of the third distance is equal to 101.5 μm.

16. The display device according to claim 15, wherein: The central axis deviation of the plotter was 48.22 μm, and the central axis deviation of the etchant supplier was 89.32 μm.

17. The display device according to claim 1, further comprising: an encapsulation layer, the encapsulation layer being located on the display layer and comprising at least one inorganic encapsulation film, Wherein, the at least one inorganic encapsulation film does not overlap with the first inclined surface.

18. The display device according to claim 17, further comprising: a sensor layer, the sensor layer being located on the encapsulation layer and comprising at least one sensor inorganic film, Wherein, the at least one sensor inorganic film does not overlap with the first inclined surface.

19. The display device according to claim 1, wherein: The first substrate includes glass, and the second substrate includes a polymer resin.

20. A display device, comprising: a first substrate including a first surface and a second surface facing each other and having a rigid material; a second substrate, the second substrate being located on the first surface of the first substrate and having a flexible material; A display layer, the display layer is located on the second substrate and includes at least one display inorganic film and a plurality of light-emitting elements; an encapsulation layer, the encapsulation layer being located on the display layer and comprising at least one inorganic encapsulation film; as well as a sensor layer, the sensor layer being located on the encapsulation layer and comprising at least one sensor inorganic film, The at least one display inorganic film, the at least one inorganic encapsulation film and the at least one sensor inorganic film constitute an inorganic film group. The first substrate further comprises, at an edge of a bending region where the second substrate is bent: a first side surface, the first side surface being located between the first surface and the second surface; and a first inclined surface, the first inclined surface being located between the first surface and the first side surface, and The inorganic film group does not overlap with the first inclined surface.

21. The display device according to claim 20, wherein: The inorganic film group does not overlap with the bending area.

22. The display device according to claim 20, further comprising: a display area in which the plurality of light emitting elements are positioned; a non-display area, the non-display area being located between the display area and the bending area; a first dam, the first dam being located between the plurality of light emitting elements and the bent region; as well as A dam structure is located in at least one of the non-display area and the bending area.

23. The display device according to claim 22, wherein: The inorganic membrane group includes a first inorganic membrane group and a second inorganic membrane group, The first inorganic film group includes the at least one display inorganic film, The second inorganic film group includes at least one of the at least one inorganic encapsulation film and the at least one sensor inorganic film, The first inorganic film group does not overlap with the bank structure, and The second inorganic film group overlaps with the bank structure.

24. The display device according to claim 22, wherein: The inorganic film group does not overlap with the bank structure.

25. The display device according to claim 20, wherein: An outermost end of the inorganic film group adjacent to the curved region is spaced apart by a first distance in a horizontal direction from a boundary where the first inclined surface and the first surface meet.

26. The display device according to claim 25, wherein: An end point of the edge of the first substrate in the bending region is spaced apart from the outermost end of the inorganic film group by a second distance in the horizontal direction.

27. The display device according to claim 26, wherein: The length of the first inclined surface in the horizontal direction is a first length, and the second distance is equal to the sum of the first distance and the first length.

28. The display device according to claim 27, wherein: The minimum value of the second distance is equal to the sum of the first distance and the average value of the first length.

29. The display device according to claim 27, wherein: The distance between the endpoints of the edge of the first substrate in the bending region is a third distance, The maximum value of the second distance satisfies the following formula 1: Formula 1 Max(D2)=μ(L1)+3σ(L1)+3σ(D3), and Max(D2) represents the maximum value of the second distance, μ(L1) represents the average value of the first length, σ(L1) represents the deviation of the first length, and σ(D3) represents the deviation of the third distance.

30. The display device according to claim 29, wherein: The first distance satisfies the following formula 2: Formula 2 D1=3σ(L1)+3σ(D3), Wherein, D1 represents the first distance.

31. The display device according to claim 30, wherein: In the process of etching the first substrate positioned in the curved region, the deviation of the third distance satisfies the following Formula 3: Formula 3 as well as Here, σ1 represents a central axis deviation of a plotter configured to remove a portion of a protective film attached on the second surface of the first substrate, and σ2 represents a central axis deviation of an etchant supplier configured to etch the first substrate.

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