Method for preparing short-channel transistor by using hard needle tip

Abstract

The invention discloses a method for preparing a short-channel transistor by using a hard needle tip, belongs to the technical field of transistor processing, and is used for solving the technical problems that a preparation method of a short-channel electrode in the prior art is complicated and the accuracy of the shape of the short-channel electrode needs to be further improved. The method comprises the following steps that a supporting layer is arranged on an adhesion layer, a substrate layer modified by a composite framework layer composed of a short-channel electrode / adhesion layer / supporting layer is obtained, negative photoresist with high leveling performance and high adhesion is prepared, ultraviolet photoetching is uniform and efficient due to the high flatness after curing, the patterning precision is improved, and the yield is improved. Meanwhile, the prepared negative photoresist is matched with the method for preparing the short-channel transistor by using the hard needle tip, so that the accuracy of the short-channel electrode structure is improved while the complexity of preparing the short-channel transistor is reduced.

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