Gating device material and memory

Abstract

The invention discloses a gating device material and a memory. The general chemical formula of the gating device material comprises (InaTeb) x (AsmSen) 1-x, wherein a / b represents the atomic number ratio of In to Te, m / n represents the atomic number ratio of As to Se, a / b is larger than 0, m / n is larger than 0, and x is larger than 0 and smaller than 1. A drift problem of a threshold voltage of a gate device including a gate device material is improved to enhance the reliability of a memory.