Semiconductor device and method of manufacturing the same, electronic device

By incorporating a bent second stack structure in the semiconductor device, the problem of insufficient memory performance in bending tests is solved, the bending resistance of the device is improved, and the risk of damage is reduced.

CN119342816BActive Publication Date: 2026-06-12YANGTZE MEMORY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
YANGTZE MEMORY TECH CO LTD
Filing Date
2023-07-21
Publication Date
2026-06-12

AI Technical Summary

⚠Technical Problem

Existing memory architectures are unable to meet performance requirements in bending tests and pose a risk of damage.

⚗Method used

By setting the second sub-part of the second stack in the semiconductor device to be curved, space avoidance is formed, thereby improving the bending resistance.

🎯Benefits of technology

It enhances the resistance of semiconductor devices to damage during bending tests and use, and reduces the probability of damage caused by bending.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application discloses a semiconductor device and a manufacturing method thereof, and an electronic device. The semiconductor device comprises a stack structure, the stack structure comprising a first stack part and a second stack part arranged on the first stack part, the second stack part comprising a first sub-part arranged in overlap with the first stack part and a second sub-part connected to the first sub-part and protruding from a side surface of the first stack part; and wherein one end of the second sub-part is connected to the first sub-part, and the other end is arranged in a bending manner towards a direction close to the first stack part. The application can form a space-avoiding bending structure for the second sub-part, thereby improving the bending resistance of the semiconductor device.
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