Device and method for preparing gas-phase low-temperature environment
CN119346193AActive Publication Date: 2025-01-24DALIAN INSTITUTE OF CHEMICAL PHYSICS CHINESE ACADEMY OF SCIENCES
Patent Information
- Application Number
- CN202411458316.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-18
- Publication Date
- 2025-01-24
- Estimated Expiration
- 2044-10-18
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Figure CN119346193A_ABST
Abstract
The invention relates to a device and a method for preparing a gas-phase low-temperature environment. The device mainly comprises a carrier gas source, a gas storage pool, a Laval nozzle, a closed vacuum cavity, a pressure sensor and the like. A carrier gas source enters the gas storage pool, passes through the Laval nozzle which is shrunk and then diverged, and is jetted out of the Laval nozzle under a certain vacuum degree, and by changing the pressure of the gas storage pool and the vacuum pressure in the cavity, the carrier gas is generated. And a uniform low-temperature supersonic beam environment with relatively stable temperature, pressure, gas molecule number density, gas flow rate and gas molecule collision frequency can be formed. The low-temperature gas uniform flow temperature ranges from 10 K to 200 K, the molecular number density of the low-temperature gas is about 1016-1017 molecters / cm < 3 >, and the temperature is adjustable. The method can be used for research in the field of microchemistry, is particularly suitable for research fields of celestial chemistry, interstellar chemistry and the like, and provides ideal conditions for simulating an interstellar low-temperature environment.
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Citation Information
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