Method for detecting a semiconductor film

Abstract

The application provides a semiconductor thin film detection method. The detection method is based on infrared spectrum detection principle, uses test pieces with different preset porosities and dielectric constants as test objects, obtains the correlation between the area ratio of preset characteristic peaks and the dielectric constant and the porosity, determines a dielectric constant equation and a porosity equation, and then in the actual detection process, only the area ratio of the preset characteristic peaks of the porous medium film needs to be obtained, and the dielectric constant and the porosity of the porous medium film can be quickly obtained according to the above equation. Moreover, the detection method can not only efficiently and accurately detect the dielectric constant and the porosity, but also has no damage and pollution to the material and structure of the semiconductor thin film, ensures that the semiconductor thin film after detection can be normally used, and effectively reduces the scrap rate of the semiconductor thin film.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method for detecting semiconductor thin films. Background Technology

[0002] In integrated circuit fabrication, low dielectric constant (k-value) dielectrics are used in the metal interconnect layers to reduce the RC (resistance-capacitance) delay of devices. Porous thin film materials, with their ultra-low dielectric constant, meet the growing trend of increasingly smaller device technology nodes. Furthermore, the deposition of low-k porous thin films requires the addition of a pore-forming agent during plasma-enhanced chemical vapor deposition (PECVD), followed by UV curing to remove the agent. This leaves nanoscale pores within the film, effectively reducing the k-value.

[0003] Since the porosity of a thin film directly affects the dielectric constant of the material, it is necessary to test the porosity of the deposited film in actual processes. Porosity refers to the percentage of pore volume to the total volume of the material in its natural state. Currently, the main method for measuring thin film porosity is the liquid nitrogen method. This method obtains pore volume based on low-temperature nitrogen adsorption, thus yielding porosity. However, this method can damage the structure, introduce measurement errors, and cannot measure blind pores. In addition, existing processes also use mercury probe microanalysis to measure film porosity and calculate porosity based on the characteristic peak area of ​​the filler in infrared spectroscopy. However, when using a mercury probe microanalysis instrument to measure film porosity, mercury comes into contact with the silicon wafer surface, causing contamination and potentially rendering the wafer unusable. Furthermore, mercury vapor can be harmful to human health. Similarly, the method of calculating porosity based on the characteristic peak area of ​​the filler in infrared spectroscopy can contaminate the material surface, also rendering the tested silicon wafer unusable.

[0004] Therefore, there is an urgent need for a new detection method to efficiently and non-destructively detect k-values ​​and porosity. Summary of the Invention

[0005] The purpose of this invention is to provide a method for detecting semiconductor thin films, so as to solve the problem of how to efficiently and non-destructively detect the k-value and porosity of porous dielectric layers.

[0006] To solve the above-mentioned technical problems, the present invention provides a method for detecting semiconductor thin films, comprising:

[0007] Multiple test chips are provided;

[0008] The ratio of the deposition material is adjusted to form thin films with different preset porosities and dielectric constants on multiple test pieces;

[0009] Infrared spectroscopy was used to detect each of the thin films, and the preset characteristic peak area ratio of each thin film was obtained respectively.

[0010] Based on the preset characteristic peak area ratio of each of the thin films and the corresponding preset porosity and dielectric constant, the dielectric constant equation and porosity equation are obtained.

[0011] Optionally, in the semiconductor thin film detection method, after obtaining the dielectric constant equation and the porosity equation, the semiconductor thin film detection method further includes:

[0012] A silicon wafer is provided on which a porous dielectric film is formed;

[0013] The porous dielectric membrane is detected by infrared spectroscopy, and the area ratio of the preset characteristic peaks of the porous dielectric membrane is obtained.

[0014] The dielectric constant and porosity of the porous dielectric film are obtained based on the preset characteristic peak area ratio, the dielectric constant equation, and the porosity equation.

[0015] Optionally, in the semiconductor thin film detection method, the process of using infrared spectroscopy to detect each of the thin films and obtaining the preset characteristic peak area ratio of each thin film includes:

[0016] Each of the thin films was detected using an infrared spectrometer to obtain the infrared absorption curves of each of the thin films.

[0017] At least two preset characteristic peaks are determined based on the infrared spectral absorption curve corresponding to each of the thin films;

[0018] The area ratio of the preset characteristic peaks is obtained based on at least two of the preset characteristic peaks.

[0019] Optionally, in the semiconductor thin film detection method, when the number of preset characteristic peaks is equal to 2, the area ratio of the preset characteristic peaks is obtained based on the two preset characteristic peaks; and,

[0020] When the number of the preset characteristic peaks is greater than 2, the process of obtaining the area ratio of the preset characteristic peaks based on at least two of the preset characteristic peaks includes:

[0021] Obtain the pairwise area ratio of at least two of the preset characteristic peaks;

[0022] The area ratio of the two preset characteristic peaks that have a linear relationship with the dielectric constant and / or the porosity is selected as the area ratio of the preset characteristic peaks.

[0023] Optionally, in the semiconductor thin film detection method, the plurality of preset characteristic peaks include: infrared absorption spectral characteristic peak Si-CH3 and infrared absorption spectral characteristic peak Si-O; and the preset characteristic peak area ratio of the thin film includes: the ratio of the area of ​​infrared absorption spectral characteristic peak Si-CH3 to the area of ​​infrared absorption spectral characteristic peak Si-O.

[0024] Optionally, in the semiconductor thin film detection method, the process of obtaining the dielectric constant equation based on the preset characteristic peak area ratio and the corresponding preset dielectric constant of each thin film includes:

[0025] A first curve is plotted based on the preset characteristic peak area ratio and the corresponding preset dielectric constant of each of the thin films;

[0026] Perform curve fitting on the first curve to obtain a first fitted curve;

[0027] The dielectric constant equation is obtained based on the first fitted curve.

[0028] Optionally, in the semiconductor thin film detection method, the first fitting curve is a linear curve, and the dielectric constant equation includes:

[0029] Y1 = A*X + B;

[0030] Where X is the preset characteristic peak area ratio; Y1 is the dielectric constant; and A and B are coefficients.

[0031] Optionally, in the semiconductor thin film detection method, the process of obtaining the porosity equation based on the preset characteristic peak area ratio and corresponding preset porosity of each thin film includes:

[0032] A second curve of porosity versus the area ratio of the characteristic peaks is plotted based on the obtained preset characteristic peak area ratios and corresponding preset porosities of each of the thin films.

[0033] Perform curve fitting on the second curve to obtain a second fitted curve;

[0034] The porosity equation is obtained based on the second fitted curve.

[0035] Optionally, in the semiconductor thin film detection method, the second fitting curve is a linear curve, and the porosity equation includes:

[0036] Y2 = C*X + D;

[0037] Where X is the preset characteristic peak area ratio; Y2 is the porosity; and C and D are coefficients.

[0038] Optionally, in the semiconductor thin film detection method, the deposition material includes: DEMS, ATRP, and BCHD; and the process of adjusting the ratio of the deposition material to form thin films with different preset porosities and dielectric constants on multiple test wafers includes:

[0039] The ratio of DEMS to ATRP is adjusted to deposit the corresponding thin films on multiple test pieces, respectively;

[0040] Each of the films is cured using ultraviolet light to form films with different preset porosities and dielectric constants.

[0041] In summary, this invention provides a method for detecting semiconductor thin films. Compared to existing technologies, this method is based on the principle of infrared spectroscopy detection. It uses test pieces of thin films with different preset porosities and dielectric constants as test objects to obtain the correlation between the area ratio of preset characteristic peaks and the dielectric constant and porosity, and determines the dielectric constant equation and porosity equation. Therefore, in actual detection processes, only the area ratio of the preset characteristic peaks of the porous dielectric film needs to be obtained to quickly determine the dielectric constant and porosity of the porous dielectric film according to the above equations. Furthermore, this detection method not only efficiently and accurately detects the dielectric constant and porosity, but also causes no damage or contamination to the semiconductor thin film material and structure, ensuring that the tested semiconductor thin film can be used normally, effectively reducing the scrap rate of semiconductor thin films. Attached Figure Description

[0042] Those skilled in the art will understand that the accompanying drawings are provided to better understand the invention and do not constitute any limitation on the scope of the invention.

[0043] Figure 1 This is a flowchart of obtaining the dielectric constant equation and porosity equation in an embodiment of the present invention.

[0044] Figure 2 This is a detailed process flow diagram of step two in an embodiment of the present invention.

[0045] Figure 3 This is a detailed process flow diagram of step three in an embodiment of the present invention.

[0046] Figure 4 This is an infrared absorption curve diagram from an embodiment of the present invention.

[0047] Figure 5 This is a flowchart illustrating the specific process for obtaining the dielectric constant equation in an embodiment of the present invention.

[0048] Figure 6 This is the first fitting curve of the dielectric constant and the preset characteristic peak area ratio in the embodiment of the present invention.

[0049] Figure 7 This is a flowchart illustrating the specific process for obtaining the porosity equation in an embodiment of the present invention.

[0050] Figure 8 This is the second fitting curve of porosity and preset characteristic peak area ratio in an embodiment of the present invention.

[0051] Figure 9 This is a flowchart illustrating the detection of the dielectric constant and porosity of a porous dielectric layer in an embodiment of the present invention. Detailed Implementation

[0052] To make the objectives, advantages, and features of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to facilitate and clearly illustrate the objectives of the embodiments of the present invention. Furthermore, the structures shown in the drawings are often part of the actual structures. In particular, different figures may emphasize different aspects and sometimes use different scales. It should also be understood that, unless specifically stated or indicated, the terms "first," "second," "third," etc., in the specification are only used to distinguish the various components, elements, steps, etc., in the specification, and are not used to indicate the logical or sequential relationships between the various components, elements, steps, etc.

[0053] Please see Figure 1 This embodiment provides a method for detecting semiconductor thin films, including:

[0054] Step 1 S10: Provide multiple test chips;

[0055] Step 2 S20: Adjust the ratio of the deposition material to form thin films with different preset porosities and dielectric constants on multiple test pieces respectively;

[0056] Step 3 S30: Use infrared spectroscopy to detect each of the thin films and obtain the preset characteristic peak area ratio of each thin film;

[0057] Step 4S40: Based on the preset characteristic peak area ratio of each of the thin films and the corresponding preset porosity and dielectric constant, obtain the dielectric constant equation and porosity equation.

[0058] Based on this, the semiconductor thin film detection method provided in this embodiment is based on the principle of infrared spectroscopy detection. It uses test pieces of thin films with different preset porosities and dielectric constants as test objects to obtain the correlation between the area ratio of preset characteristic peaks and dielectric constant and porosity, thereby determining the dielectric constant equation and porosity equation. This allows the dielectric constant and porosity equation to be calculated efficiently and safely in actual detection processes by simply obtaining the area ratio of the preset characteristic peaks of the porous dielectric film according to the above equations.

[0059] The following is in conjunction with the appendix Figures 1 to 9 This embodiment will specifically explain the detection method for the semiconductor thin film.

[0060] Step 1 S10: Provide multiple test chips.

[0061] The test wafers are silicon wafers used for process inspection. To ensure the accuracy of the test results, the film material, film structure, and film thickness of each test wafer are kept consistent. This embodiment does not limit the specific number of test wafers; it can be three, four, five, or six, etc. For example, this embodiment provides four test wafers: a first test wafer, a second test wafer, a third test wafer, and a fourth test wafer.

[0062] Step 2 S20: Adjust the ratio of the deposition material to form thin films with different preset porosities and dielectric constants on multiple test pieces.

[0063] It should be noted that the film is a porous film with a low k-value. Therefore, the materials forming the film include a precursor and a pore-forming agent. Preferably, the precursor mainly includes methyldiethoxysilane (DEMS), and the pore-forming agent mainly includes terpinene (ATRP) and dicycloheptadecene (BCHD). Preferably, the film is formed by PECVD deposition. While adding a pore-forming agent during film deposition can result in a pore-free film, after curing under ultraviolet (UV) irradiation, the pore-forming agent reacts to generate gas, leaving nanoscale pores inside the film, thus obtaining a porous film, which is beneficial for reducing the k-value of the film. However, the detection method provided in this embodiment aims to obtain the correlation between porosity, dielectric constant, and a preset characteristic peak area ratio in advance. Therefore, by simply obtaining the preset characteristic peak area ratio of the film and combining it with the correlation, the porosity and dielectric constant of the film can be calculated efficiently.

[0064] Based on this, this embodiment adjusts the ratio of the deposition material to make the porosity and dielectric constant of the thin film formed on each of the test pieces different, thereby obtaining a large amount of test data, which helps to improve the accuracy of the subsequent correlation.

[0065] Therefore, as Figure 2 As shown, step two S20 specifically includes:

[0066] Sub-step S201: Adjust the ratio of DEMS and ATRP to deposit the thin film on each of the multiple test wafers.

[0067] Sub-step S202: Use ultraviolet light to cure each of the films to form films with different preset porosities and dielectric constants.

[0068] For example, the ATRP to DEMS ratios of the films formed on the first test sheet, the second test sheet, the third test sheet, and the fourth test sheet are 1.4, 1.6, 1.8, and 2.0, respectively.

[0069] Step 3 S30: Use infrared spectroscopy to detect each of the thin films and obtain the preset characteristic peak area ratio of each thin film.

[0070] It should be noted that infrared spectroscopy is based on the selective absorption of electromagnetic radiation in the infrared region by a substance. When a sample is irradiated with infrared light of continuously varying frequencies, molecules absorb radiation at certain specific frequencies. This absorption, caused by vibrational or rotational motion, results in changes in dipole moments, leading to transitions in molecular vibrational and rotational energy levels from the ground state to excited states. Consequently, the intensity of transmitted light corresponding to these absorption regions decreases. Therefore, by recording the percentage transmittance of infrared light as a function of wavenumber or wavelength, an infrared absorption curve is obtained. The infrared absorption curve contains information about the molecular structure and chemical bonds of the substance. By analyzing the positions and intensities of these characteristic peaks, information about the substance's composition, structure, and chemical state can be obtained.

[0071] Based on this, infrared spectroscopy is used to detect the thin film. Whether it's a through-hole or a blind-hole, the absorption spectrum can be fully characterized. Furthermore, infrared light irradiation does not contaminate or damage the thin film material and structure, enabling efficient and non-destructive testing of the thin film. Specifically, such as... Figure 3 As shown, step three S30 includes:

[0072] Sub-step S301: Use an infrared spectrometer to detect each of the thin films to obtain the infrared absorption curves of each thin film.

[0073] For example, the thin films formed on the first test piece, the second test piece, the third test piece, and the fourth test piece are respectively sample 1, sample 2, sample 3, and sample 4, and can be obtained by infrared spectroscopy detection. Figure 4 The infrared absorption curves for each of the samples are shown. Given that the films are formed using DEMS, ATRP, and BCHD deposition, and that infrared absorption spectral characteristic peaks Si-CH3 and Si-O are obtained as long as the precursor is silane, different infrared absorption spectral characteristic peaks will be formed. Of course, using different materials to deposit the films will result in different infrared absorption spectral characteristic peaks.

[0074] Sub-step S302: Determine at least two preset characteristic peaks based on the infrared spectral absorption curve corresponding to each of the thin films.

[0075] Due to the different materials used in thin film deposition, the obtained infrared absorption curves will generally show at least two of the aforementioned preset characteristic peaks, which may be... Figure 4 The two characteristic peaks shown could also be three or four, etc.

[0076] Furthermore, according to Figure 4 As can be seen, given the different preset porosity and dielectric constant during the thin film deposition process, although the infrared spectral absorption curves of samples 1, 2, 3, and 4 show similar trends, the areas of their respective preset characteristic peaks are different. Therefore, this example uses the area ratio of the preset characteristic peaks to characterize the porosity and dielectric constant within the thin film, and the specific process for obtaining the area ratio of the preset characteristic peaks is described in sub-step three, S303 below.

[0077] Sub-step S303: Obtain the area ratio of the preset characteristic peaks based on at least two of the preset characteristic peaks.

[0078] To facilitate characterizing the relationship between porosity, dielectric constant, and the area ratio of preset characteristic peaks, such as Figure 4 As shown, when the number of preset characteristic peaks in the acquired infrared absorption curve is equal to 2, the area ratio of the preset characteristic peaks is obtained based on the two preset characteristic peaks. For example, the area ratio of the preset characteristic peaks is the ratio of the area of ​​the infrared absorption spectrum characteristic peak Si-CH3 to the area of ​​the infrared absorption spectrum characteristic peak Si-O. When the number of preset characteristic peaks is greater than 2, the area ratios of at least two preset characteristic peaks can be obtained pairwise first; then, the area ratios of two preset characteristic peaks that have a linear relationship with the dielectric constant and / or the porosity can be selected as the area ratio of the preset characteristic peaks. For example, if the acquired infrared absorption curve contains a first characteristic peak, a second characteristic peak, and a third characteristic peak, the area ratios of the first and second characteristic peaks, the first and third characteristic peaks, and the second and third characteristic peaks can be calculated first; then, it can be determined whether these three area ratios have a linear relationship with the dielectric constant and / or the porosity. Assuming that the area ratio of the first characteristic peak to the second characteristic peak and the area ratio of the first characteristic peak to the third characteristic peak are both linearly related to the dielectric constant and / or the porosity, then either one can be chosen as the area ratio of the preset characteristic peak.

[0079] It should be noted that, depending on the deposition material, the area ratio of the characteristic peaks that have a nonlinear relationship with the dielectric constant and / or the porosity can also be selected as the area ratio of the preset characteristic peaks. Optionally, the area calculation method of the characteristic peaks generally adopts an integral method, mainly including the rectangular method, the trapezoidal method, and the Simpson method, etc.

[0080] Step 4S40: Based on the preset characteristic peak area ratio of each of the thin films and the corresponding preset porosity and dielectric constant, obtain the dielectric constant equation and porosity equation.

[0081] Please see Figure 5 and Figure 6 The process of obtaining the dielectric constant equation based on the preset characteristic peak area ratio and the corresponding preset dielectric constant of each of the thin films includes:

[0082] Sub-step S401: Plot the first curve of the dielectric constant versus the area ratio of the characteristic peaks based on the obtained preset characteristic peak area ratios and corresponding preset dielectric constants of each of the thin films.

[0083] Sub-step S402: Perform curve fitting on the first curve to obtain the first fitted curve.

[0084] Optionally, the curve can be linearly fitted, resulting in a linear curve. In other examples, depending on the deposited material, other nonlinear curve fitting methods may also be used.

[0085] Sub-step S403: Obtain the dielectric constant equation based on the first fitted curve.

[0086] For example, the dielectric constant equation includes:

[0087] Y1 = A*X + B;

[0088] Where X is the preset characteristic peak area ratio; Y1 is the dielectric constant; and A and B are constant coefficients.

[0089] Based on this, according to the area ratio of the preset characteristic peaks of samples 1, 2, 3, and 4 and their respective preset dielectric constants, the following can be obtained: Figure 6 The dielectric constant equation shown is: Y1 = -1635.7*X + 33.087.

[0090] Similarly, please refer to Figure 7 and Figure 8 The process of obtaining the porosity equation based on the preset characteristic peak area ratio and corresponding preset porosity of each of the thin films includes:

[0091] Sub-step S404: Plot a second curve of porosity versus the area ratio of the characteristic peaks based on the obtained preset characteristic peak area ratios and corresponding preset porosities of each of the thin films.

[0092] Sub-step S405: Perform curve fitting on the second curve to obtain a second fitted curve.

[0093] Optionally, a linear fit is performed on the curve, resulting in a linear curve for the second fitted curve. In other examples, depending on the deposited material, other nonlinear curve fitting methods may also be used.

[0094] Sub-step S406: Obtain the porosity equation based on the second fitted curve.

[0095] For example, the porosity equation includes:

[0096] Y2 = C*X + D;

[0097] Where X is the preset characteristic peak area ratio; Y2 is the porosity; and C and D are constant coefficients.

[0098] Based on this, according to the area ratio of the preset characteristic peaks and their corresponding preset porosities of samples 1, 2, 3, and 4, the following can be obtained: Figure 8 The porosity equation shown is: Y2=58214*X-1068.4.

[0099] In summary, through steps S10 to S40, the porosity equation and the dielectric constant equation were obtained. That is, the relationship equations between the preset characteristic peak area ratio and the porosity and dielectric constant were obtained. Based on these equations, the porosity and dielectric constant of the thin film can be determined simply by obtaining the preset characteristic peak area ratio. Therefore, when detecting the porosity and dielectric constant of porous dielectric films on silicon wafers, it is only necessary to obtain the preset characteristic peak area ratio through infrared spectroscopy, and then, according to the above relationship equations, to safely and efficiently obtain the porosity and dielectric constant of the porous dielectric film. There is no need to contact the film surface for detection or form other material layers for detection. This not only results in high detection efficiency and accuracy but also enables non-destructive testing of the silicon wafer's material and structure, ensuring that the tested silicon wafer can be used normally and reducing the scrap rate of silicon wafers.

[0100] Therefore, in the actual process of process testing, such as Figure 9 As shown, the method for detecting the semiconductor thin film further includes:

[0101] Step 5 S50: Provide a silicon wafer on which a porous dielectric film is formed.

[0102] Step 6 S60: Use infrared spectroscopy to detect the porous dielectric membrane and obtain the preset characteristic peak area ratio of the porous dielectric membrane.

[0103] Step 7S70: Obtain the dielectric constant and porosity of the porous dielectric film according to the preset characteristic peak area ratio, the dielectric constant equation, and the porosity equation.

[0104] For example, the dielectric constant equation is: Y1 = -1635.7*X + 33.087; the porosity equation is: Y2 = 58214*X - 1068.4; and the area ratio of the characteristic peaks of Si-CH3 and Si-O in the infrared absorption spectrum obtained by infrared spectroscopy is 0.0189. Therefore, the dielectric constant of the porous dielectric film can be efficiently calculated to be approximately 2.172 F / m, and the porosity to be approximately 31.845%.

[0105] In summary, the semiconductor thin film detection method provided in this embodiment is based on the principle of infrared spectroscopy. First, multiple test pieces with different preset porosities and dielectric constants are used as test objects to obtain the correlation between the area ratio of preset characteristic peaks and the dielectric constant and porosity, thus determining the dielectric constant equation and porosity equation. Then, the porous dielectric film on the silicon wafer is detected by infrared spectroscopy to obtain the area ratio of the preset characteristic peaks of the porous dielectric film. Combining the dielectric constant equation and porosity equation, the dielectric constant and porosity of the porous dielectric film can be obtained efficiently and safely. Furthermore, this detection method not only efficiently and accurately detects the dielectric constant and porosity but also causes no damage or contamination to the semiconductor thin film's material and structure, ensuring that the tested semiconductor thin film can be used normally and effectively reducing the scrap rate of semiconductor thin films.

[0106] Furthermore, it should be understood that although the present invention has been disclosed above with reference to preferred embodiments, these embodiments are not intended to limit the present invention. For any person skilled in the art, many possible variations and modifications can be made to the technical solutions of the present invention based on the disclosed technical content, or equivalent embodiments can be modified accordingly, without departing from the scope of the present invention. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention, without departing from the content of the present invention, shall still fall within the scope of protection of the present invention.

Claims

1. A method for detecting semiconductor thin films, characterized in that, include: Multiple test chips are provided; The ratio of the deposition material is adjusted to form films with different preset porosities on multiple test pieces; Infrared spectroscopy was used to detect each of the thin films, and the preset characteristic peak area ratio of each thin film was obtained respectively. Based on the preset characteristic peak area ratio and the corresponding preset porosity of each of the thin films, the porosity equation is obtained; The preset characteristic peak area ratio includes the ratio of the area of ​​the infrared absorption spectral characteristic peak Si-CH3 to the area of ​​the infrared absorption spectral characteristic peak Si-O.

2. The method for detecting semiconductor thin films according to claim 1, characterized in that, After obtaining the porosity equation, the method for detecting the semiconductor thin film further includes: A silicon wafer is provided on which a porous dielectric film is formed; The porous dielectric membrane is detected by infrared spectroscopy, and the area ratio of the preset characteristic peaks of the porous dielectric membrane is obtained. The porosity of the porous medium membrane is obtained according to the preset characteristic peak area ratio and the porosity equation.

3. The method for detecting semiconductor thin films according to claim 1, characterized in that, The process of using infrared spectroscopy to detect each of the thin films and obtaining the preset characteristic peak area ratio of each thin film includes: Each of the thin films was detected using an infrared spectrometer to obtain the infrared absorption curves of each of the thin films. At least two preset characteristic peaks are determined based on the infrared spectral absorption curve corresponding to each of the thin films; The area ratio of the preset characteristic peaks is obtained based on at least two of the preset characteristic peaks.

4. The method for detecting semiconductor thin films according to claim 3, characterized in that, When the number of the preset characteristic peaks is equal to 2, the area ratio of the preset characteristic peaks is obtained based on the two preset characteristic peaks; as well as, When the number of the preset characteristic peaks is greater than 2, the process of obtaining the area ratio of the preset characteristic peaks based on at least two of the preset characteristic peaks includes: Obtain the pairwise area ratio of at least two of the preset characteristic peaks; The area ratio of the two preset characteristic peaks that have a linear relationship with the porosity is selected as the area ratio of the preset characteristic peaks.

5. The method for detecting semiconductor thin films according to claim 1 or 4, characterized in that, The process of obtaining the porosity equation based on the preset characteristic peak area ratio and corresponding preset porosity of each of the thin films includes: A second curve of porosity versus the area ratio of the characteristic peaks is plotted based on the obtained preset characteristic peak area ratios and corresponding preset porosities of each of the thin films. Perform curve fitting on the second curve to obtain a second fitted curve; The porosity equation is obtained based on the second fitted curve.

6. The method for detecting semiconductor thin films according to claim 5, characterized in that, The second fitted curve is a linear curve, and the porosity equation includes: Y2 = C*X + D; Where X is the preset characteristic peak area ratio; Y2 is the porosity; and C and D are coefficients.

7. The method for detecting semiconductor thin films according to claim 1, characterized in that, The deposition materials include DEMS, ATRP, and BCHD; and the process of adjusting the ratio of the deposition materials to form films with different preset porosities on multiple test pieces includes: The ratio of DEMS to ATRP is adjusted to deposit the corresponding thin films on multiple test pieces, respectively; Each of the films is cured using ultraviolet light to form films with different preset porosities.

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