Testing method and testing device for bypass diode of photovoltaic module

Abstract

The invention discloses a testing method and a testing device for a bypass diode of a photovoltaic module, and belongs to the field of photovoltaic technology. The method comprises the following steps: acquiring a first electrical performance parameter of a bypass diode; performing a first impact test on the bypass diode to obtain a second electrical performance parameter of the bypass diode, and performing a second impact test on the bypass diode to obtain a third electrical performance parameter of the bypass diode; acquiring a fourth electrical performance parameter of the bypass diode under the condition of determining that the first impact test is passed and the second impact test is passed; determining a test result of the bypass diode based on the first electrical performance parameter and the fourth electrical performance parameter; wherein the first impact test is a test for inputting reverse pulse current to the bypass diode, and the second impact test is a test for releasing reverse electric energy to the bypass diode. According to the method, the bypass diode which is weak in performance or has structural defects can be quickly and accurately identified.

Description

Technical Field

[0001] The present application belongs to the field of photovoltaic technology, and in particular relates to a test method and a test device for a bypass diode of a photovoltaic module. Background Art

[0002] During the use of photovoltaic modules, when a battery or a group of batteries in the module is shaded or damaged, this part of the module acts as a load in the branch, consuming the electricity generated by other modules that are not shaded or damaged. The shaded or damaged modules will heat up and produce a hot spot effect, which will seriously affect the safe operation of the photovoltaic modules.

[0003] Bypass diodes are important components for reducing the hot spot effect of photovoltaic modules, and their safety and long-term reliability are crucial. Currently, the screening test of bypass diodes before use mainly measures parameters such as the forward voltage drop, reverse withstand voltage and reverse leakage current of the bypass diodes to determine whether these parameters meet the reference value range. For some diode products with weak performance, physical deviation or structural defects, their measurement parameters may be within the reference range. The current test method cannot detect these diode products, but these diode products are prone to breakdown failure during actual operation, affecting the safety and reliability of photovoltaic modules and causing economic losses.

[0004] How to identify diode products with weak performance or structural defects is a technical problem that needs to be solved urgently in this field. Summary of the invention

[0005] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes a test method and a test device for bypass diodes of photovoltaic modules, which can quickly and accurately identify bypass diodes with weak performance or structural defects.

[0006] In a first aspect, the present application provides a method for testing a bypass diode of a photovoltaic module, comprising:

[0007] Obtaining a first electrical performance parameter of the bypass diode;

[0008] Performing a first impact test on the bypass diode to obtain a second electrical performance parameter of the bypass diode, and performing a second impact test on the bypass diode to obtain a third electrical performance parameter of the bypass diode;

[0009] When it is determined that the first impact test is passed based on the first electrical performance parameter and the second electrical performance parameter, and when it is determined that the second impact test is passed based on the first electrical performance parameter and the third electrical performance parameter, acquiring a fourth electrical performance parameter of the bypass diode;

[0010] Determining a test result of the bypass diode based on the first electrical performance parameter and the fourth electrical performance parameter;

[0011] The first impact test is a test of inputting a reverse pulse current into the bypass diode, and the second impact test is a test of releasing reverse electrical energy into the bypass diode.

[0012] According to the test method for bypass diodes of photovoltaic modules of the present application, by setting a first impact test simulating a reverse surge current impact and a second impact test simulating a reverse energy impact, the electrical performance parameters of the bypass diode before and after the impact test are obtained, and the reverse impact resistance of the bypass diode is detected. Bypass diodes with weak performance or structural defects can be quickly and accurately identified, which helps to improve the safety and reliability of photovoltaic modules during operation and reduce economic losses.

[0013] According to one embodiment of the present application, performing a first impact test on the bypass diode includes:

[0014] A first reverse pulse current is input into the bypass diode and lasts for a first target time period.

[0015] According to one embodiment of the present application, inputting a first reverse pulse current into the bypass diode for a first target duration includes:

[0016] The first reverse pulse current is input to the bypass diode multiple times continuously, each time the first reverse pulse current is input lasts for the first target duration, and the multiple input first reverse pulse currents are increasing, decreasing or the same.

[0017] According to one embodiment of the present application, performing a second impact test on the bypass diode includes:

[0018] The second reverse electric energy is released to the bypass diode within a second target time period.

[0019] According to an embodiment of the present application, releasing the second reverse electric energy to the bypass diode within the second target time period includes:

[0020] The second reverse electric energy is released to the bypass diode multiple times within the second target time period, and the second reverse electric energy released multiple times is increasing, decreasing or the same.

[0021] According to an embodiment of the present application, the first electrical performance parameter includes a first reverse leakage current and a first reverse withstand voltage, the second electrical performance parameter includes a second reverse leakage current and a second reverse withstand voltage, and determining that the first impact test is passed based on the first electrical performance parameter and the second electrical performance parameter includes:

[0022] When the ratio of the second reverse leakage current to the first reverse leakage current is less than or equal to a first ratio threshold, and the ratio of the first withstand voltage difference to the first reverse withstand voltage is less than or equal to a second ratio threshold, it is determined that the first impact test has passed, and the first withstand voltage difference is the difference between the second reverse withstand voltage and the first reverse withstand voltage.

[0023] According to an embodiment of the present application, the first electrical performance parameter includes a first reverse leakage current and a first reverse withstand voltage, the third electrical performance parameter includes a third reverse leakage current and a third reverse withstand voltage, and determining that the second impact test is passed based on the first electrical performance parameter and the third electrical performance parameter includes:

[0024] When the ratio of the third reverse leakage current to the first reverse leakage current is less than or equal to a third ratio threshold, and the ratio of the second withstand voltage difference to the first reverse withstand voltage is less than or equal to a fourth ratio threshold, it is determined that the second impact test is passed, and the second withstand voltage difference is the difference between the third reverse withstand voltage and the first reverse withstand voltage.

[0025] According to an embodiment of the present application, after acquiring the first electrical performance parameter of the bypass diode and before acquiring the fourth electrical performance parameter of the bypass diode, the method further includes:

[0026] Obtaining a fifth electrical performance parameter corresponding to the bypass diode under a target test temperature environment;

[0027] The obtaining of a fourth electrical performance parameter of the bypass diode includes:

[0028] When it is determined based on the fifth electrical performance parameter and the first electrical performance parameter that the environmental test at the target test temperature is passed, the fourth electrical performance parameter is acquired.

[0029] According to one embodiment of the present application, the target test temperature is 60°C-100°C.

[0030] According to one embodiment of the present application, the first electrical performance parameter, the second electrical performance parameter and the third electrical performance parameter are obtained under a first test condition, the fourth electrical performance parameter is obtained under a second test condition, and the test electrical parameters of the second test condition are greater than the test electrical parameters of the first test condition.

[0031] According to an embodiment of the present application, the first electrical performance parameter includes a first reverse leakage current and a first reverse withstand voltage, the fourth electrical performance parameter includes a fourth reverse leakage current and a fourth reverse withstand voltage, and determining the test result of the bypass diode based on the first electrical performance parameter and the fourth electrical performance parameter includes:

[0032] When the difference between the fourth reverse leakage current and the first reverse leakage current is less than or equal to a first difference threshold, and the difference between the fourth reverse withstand voltage and the first reverse withstand voltage is less than or equal to a second difference threshold, it is determined that the bypass diode test has passed.

[0033] According to an embodiment of the present application, in the case of determining that the bypass diode test passes, the method further includes:

[0034] A sixth electrical performance parameter of the bypass diode is obtained, and based on the sixth electrical performance parameter, a test result of the bypass diode is verified.

[0035] In a second aspect, the present application provides a test device for a bypass diode of a photovoltaic module, the device comprising:

[0036] A first power supply device, wherein two ends of the first power supply device are respectively connected to two ends of a bypass diode to be tested, the first power supply device is used to input a reverse pulse current to the bypass diode, and the first power supply device is also used to provide a test condition for an electrical performance parameter of the bypass diode;

[0037] A second power supply device, two ends of the second power supply device are respectively connected to two ends of the bypass diode, and the second power supply device is used to release reverse power to the bypass diode;

[0038] An electrical performance parameter acquisition device, the electrical performance parameter acquisition device is connected to the bypass diode, and the electrical performance parameter acquisition device is used to acquire electrical performance parameters of the bypass diode;

[0039] A test control device, wherein the test control device is connected to the first power supply device, the second power supply device and the electrical performance parameter acquisition device, and the test control device is used to execute the test method for the bypass diode of the photovoltaic module described in the first aspect above to test the bypass diode.

[0040] According to the test device for the bypass diode of the photovoltaic module of the present application, through the first impact test simulating the reverse surge current impact and the second impact test simulating the reverse energy impact, the electrical performance parameters of the bypass diode before and after the impact test are obtained, and the reverse impact resistance of the bypass diode is detected. Bypass diodes with weak performance or structural defects can be identified quickly and accurately, which helps to improve the safety and reliability of the photovoltaic module during operation and reduce economic losses.

[0041] According to one embodiment of the present application, it also includes:

[0042] A capacitor, two ends of which are respectively connected to two ends of the second power supply device, the second power supply device is used to charge the capacitor, and the capacitor is used to release reverse electric energy to the bypass diode.

[0043] According to an embodiment of the present application, an adjustable resistor is provided on the loop connecting the capacitor and the bypass diode, and the adjustable resistor is used to adjust the current in the loop connecting the capacitor and the bypass diode.

[0044] According to an embodiment of the present application, it further includes: an environmental chamber, wherein the bypass diode is placed in the environmental chamber, and the environmental chamber is used to provide a test temperature environment for the bypass diode.

[0045] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0047] Figure 1 This is one of the flow charts of the method for testing the bypass diode of a photovoltaic module provided in the embodiment of the present application;

[0048] Figure 2 This is a second flow chart of a method for testing a bypass diode of a photovoltaic module provided in an embodiment of the present application;

[0049] Figure 3 This is a third flow chart of a method for testing a bypass diode of a photovoltaic module provided in an embodiment of the present application;

[0050] Figure 4 This is a fourth flow chart of a method for testing a bypass diode of a photovoltaic module provided in an embodiment of the present application;

[0051] Figure 5 This is a fifth flow chart of a method for testing a bypass diode of a photovoltaic module provided in an embodiment of the present application;

[0052] Figure 6 This is the sixth flow chart of the method for testing the bypass diode of a photovoltaic module provided in the embodiment of the present application;

[0053] Figure 7 This is one of the structural schematic diagrams of a bypass diode testing device for a photovoltaic module provided in an embodiment of the present application;

[0054] Figure 8This is the second structural schematic diagram of the bypass diode testing device for photovoltaic modules provided in the embodiment of the present application.

[0055] Reference numerals:

[0056] A first power supply device 710, a first isolation circuit 711, a second power supply device 720, a second isolation circuit 721, a capacitor 722, an adjustable resistor 723,

[0057] Bypass diode 730, electrical performance parameter acquisition device 740, voltage detection device 741, current detection device 742,

[0058] Test control device 750 , environmental chamber 760 , temperature detection device 761 , first switch 771 , second switch 772 . DETAILED DESCRIPTION

[0059] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0060] Reference below Figure 1-Figure 8 A method for testing the bypass diode 730 and a device for testing the bypass diode 730 according to an embodiment of the present application are described.

[0061] like Figure 1 As shown, the test method of the bypass diode 730 in the embodiment of the present application includes step 110, step 120, step 130 and step 140.

[0062] Step 110 : Obtain a first electrical performance parameter of the bypass diode 730 .

[0063] It is understandable that the electrical performance parameters of the bypass diode 730 are a series of indicators for measuring the electrical performance of the bypass diode 730 as an electronic component. The electrical performance parameters of the bypass diode 730 may include parameters such as reverse leakage current, reverse withstand voltage, and forward voltage drop.

[0064] In this step, the first electrical performance parameters of the bypass diode 730 may be obtained by electrical performance testing means, wherein the first electrical performance parameters may include a first reverse leakage current and a first reverse withstand voltage of the bypass diode 730 .

[0065] It should be noted that the first electrical performance parameter is a parameter that characterizes the basic electrical performance of the finished bypass diode 730. When obtaining the first electrical performance parameter, an electrical performance testing method can be directly used for testing.

[0066] In actual implementation, the electrical performance test method for measuring the reverse leakage current can be to output a constant voltage pulse to the bypass diode 730 and record the reverse leakage current of the bypass diode 730; the electrical performance test method for measuring the reverse withstand voltage can be to output a constant current pulse to the bypass diode 730 and record the reverse withstand voltage of the bypass diode 730.

[0067] For example, Figure 8 As shown, the bypass diode 730 to be tested is connected to the test device, and the first power supply device 710 of the test device can provide two output modes: constant current pulse output and constant voltage pulse output.

[0068] The bypass diode 730 is controlled to be in a normal temperature environment of 25°C through the environmental box 760 and the temperature detection device 761, the first switch 771 is closed, the first power supply device 710 outputs a constant voltage pulse of 0V-50V lasting for 1ms, and the current detection device 742 records the first reverse leakage current IR1 of the bypass diode 730.

[0069] The first power supply device 710 outputs a constant current pulse of 0mA-1mA for 1ms. The voltage detection device 741 records the first reverse withstand voltage VB1 of the bypass diode 730. The first electrical performance parameters of the bypass diode 730 include IR1 and VB1. After the test, the first switch 771 is disconnected.

[0070] Step 120 , performing a first impact test on the bypass diode 730 to obtain a second electrical performance parameter of the bypass diode 730 , and performing a second impact test on the bypass diode 730 to obtain a third electrical performance parameter of the bypass diode 730 .

[0071] The first impact test is a test of inputting a reverse pulse current into the bypass diode 730 , and the second impact test is a test of releasing reverse electrical energy into the bypass diode 730 .

[0072] In this embodiment, a first impact test is performed on the bypass diode 730, a reverse pulse current is input into the bypass diode 730, and a reverse current impact is performed on the bypass diode 730. After the first impact test is completed, the second electrical performance parameter of the bypass diode 730 is obtained through electrical performance testing means.

[0073] In this embodiment, a second impact test is performed on the bypass diode 730, reverse electrical energy is released to the bypass diode 730, and a reverse energy impact is performed on the bypass diode 730. After the second impact test is completed, the third electrical performance parameter of the bypass diode 730 is obtained through electrical performance testing means.

[0074] It should be noted that there is no execution order requirement for the first impact test and the second impact test. The first impact test can be performed first to obtain the second electrical performance parameters, and then the second impact test can be performed to obtain the third electrical performance parameters; or the second impact test can be performed first to obtain the third electrical performance parameters, and then the first impact test can be performed to obtain the second electrical performance parameters.

[0075] In this step, through the first impact test, the second electrical performance parameter can be obtained, and the second electrical performance parameter can characterize the electrical performance of the bypass diode 730 after the reverse surge current impact; through the second impact test, the third electrical performance parameter can be obtained, and the third electrical performance parameter can characterize the electrical performance of the bypass diode 730 after the reverse energy impact.

[0076] In actual implementation, the second electrical performance parameter may include a second reverse leakage current and a second reverse withstand voltage of the bypass diode 730 , and the third electrical performance parameter may include a third reverse leakage current and a third reverse withstand voltage of the bypass diode 730 .

[0077] For example, Figure 8 As shown, the bypass diode 730 to be tested is connected to the test device. The first power supply device 710 of the test device can provide two output modes: constant current pulse output and constant voltage pulse output. The bypass diode 730 is controlled to be in a normal temperature environment of 25°C through the environmental box 760 and the temperature detection device 761.

[0078] After the first impact test, the first power supply device 710 outputs a constant voltage pulse of 0V-50V for 1ms, the current detection device 742 records the second reverse leakage current IR2 of the bypass diode 730, the first power supply device 710 outputs a constant current pulse of 0mA-1mA for 1ms, the voltage detection device 741 records the second reverse withstand voltage VB2 of the bypass diode 730, and the second electrical performance parameters of the bypass diode 730 include IR2 and VB2.

[0079] After the second impact test, the first power supply device 710 outputs a constant voltage pulse of 0V-50V for 1ms, the current detection device 742 records the third reverse leakage current IR3 of the bypass diode 730, the first power supply device 710 outputs a constant current pulse of 0mA-1mA for 1ms, the voltage detection device 741 records the third reverse withstand voltage VB3 of the bypass diode 730, and the third electrical performance parameters of the bypass diode 730 include IR3 and VB3.

[0080] Step 130 , when it is determined that the first impact test passes based on the first electrical performance parameter and the second electrical performance parameter, and when it is determined that the second impact test passes based on the first electrical performance parameter and the third electrical performance parameter, obtain the fourth electrical performance parameter of the bypass diode 730 .

[0081] It is understandable that the first electrical performance parameter and the second electrical performance parameter can reflect the change in the electrical performance of the bypass diode 730 before and after the reverse surge current impact, and determine whether the bypass diode 730 has the ability to resist the impact of the reverse surge current.

[0082] In addition, the first electrical performance parameter and the third electrical performance parameter can reflect the change in the electrical performance of the bypass diode 730 before and after the reverse energy impact, and determine whether the bypass diode 730 has the ability to resist the impact of reverse energy.

[0083] In this step, after judging that the bypass diode 730 has passed the first impact test and the second impact test, the fourth electrical performance parameter of the bypass diode 730 is obtained through electrical performance testing means. The fourth electrical performance parameter represents the electrical performance of the bypass diode 730 after experiencing reverse surge current impact and reverse energy impact.

[0084] For example, Figure 8 As shown, the bypass diode 730 to be tested is connected to the test device, and after determining that the first impact test has passed according to IR2 and VB2 and that the second impact test has passed according to IR3 and VB3, the first power supply device 710 outputs a constant voltage pulse, the current detection device 742 records the fourth reverse leakage current IR4 of the bypass diode 730, the first power supply device 710 outputs a constant current pulse, the voltage detection device 741 records the fourth reverse withstand voltage VB4 of the bypass diode 730, and the fourth electrical performance parameters of the bypass diode 730 include IR4 and VB4.

[0085] Step 140 : Determine a test result of the bypass diode 730 based on the first electrical performance parameter and the fourth electrical performance parameter.

[0086] It should be noted that, through the fourth electrical performance parameter and the first electrical performance parameter of the bypass diode 730 , it is possible to determine the electrical performance change of the bypass diode 730 after experiencing the reverse surge current impact and the reverse energy impact.

[0087] In actual implementation, a curve of performance change of bypass diode 730 can also be fitted according to the fourth electrical performance parameter and the first electrical performance parameter to show the electrical performance change of bypass diode 730 under reverse impact conditions and obtain the test result of bypass diode 730.

[0088] When the bypass diode 730 passes the test, it indicates that the bypass diode 730 has the ability to resist reverse impact. When the bypass diode 730 fails the test, it indicates that the bypass diode 730 does not have the ability to resist reverse impact, that is, the bypass diode 730 may be a diode product with weak performance or structural defects.

[0089] In the related art, the screening test of the bypass diode 730 before use mainly measures parameters such as the forward voltage drop, reverse withstand voltage and reverse leakage current of the bypass diode 730 to determine whether these parameters meet the reference value range, which is only a test of conventional electrical performance.

[0090] For some diode products with weak performance or structural defects (for example, impurities exist in the diode or the production process is defective), their measurement parameters may be within the reference range. At this time, the basic electrical performance test may pass. Such test methods in related technologies cannot detect these diode products. However, these diode products are prone to breakdown failure during actual operation, affecting the safety and reliability of photovoltaic modules and causing economic losses.

[0091] In an embodiment of the present application, by setting a first impact test simulating a reverse surge current impact and a second impact test simulating a reverse energy impact, the electrical performance parameters of the bypass diode 730 before and after the impact test are obtained, and the reverse impact resistance capability of the bypass diode 730 can be detected. For diode products with weak performance or structural defects, their reverse resistance capability is poor. The embodiment of the present application can quickly and accurately identify the bypass diode 730 with weak performance or structural defects.

[0092] In actual implementation, the first electrical performance parameter of the bypass diode 730 is first obtained, and then the first impact test and the second impact test are performed to obtain the second electrical performance parameter and the third electrical performance parameter. Through the first electrical performance parameter and the second electrical performance parameter, it is determined whether the bypass diode 730 has the ability to resist the impact of the reverse surge current. Through the first electrical performance parameter and the third electrical performance parameter, it is determined whether the bypass diode 730 has the ability to resist the impact of the reverse energy. Then, the fourth electrical performance parameter of the bypass diode 730 is obtained. Through the first electrical performance parameter and the fourth electrical performance parameter, the electrical performance changes of the bypass diode 730 before and after the reverse surge current impact and the reverse energy impact are reflected. The reverse impact resistance of the bypass diode 730 is comprehensively evaluated, and the bypass diode 730 with weak performance or structural defects can be quickly and accurately identified. The bypass diode 730 that has passed the test is not prone to breakdown failure in the actual working process, which can improve the safety and reliability of the photovoltaic module during operation and reduce the economic losses caused by the failure of the bypass diode 730.

[0093] According to the testing method of the bypass diode 730 provided in the embodiment of the present application, by setting a first impact test simulating a reverse surge current impact and a second impact test simulating a reverse energy impact, the electrical performance parameters of the bypass diode 730 before and after the impact test are obtained, and the reverse impact resistance of the bypass diode 730 is detected. Bypass diodes 730 with weak performance or structural defects can be quickly and accurately identified, which helps to improve the safety and reliability of photovoltaic modules during operation and reduce economic losses.

[0094] In some embodiments, a first impulse test is performed on the bypass diode 730, including:

[0095] A first reverse pulse current is input to the bypass diode 730 and lasts for a first target time period.

[0096] It should be noted that when performing the first impact test, the first reverse pulse current is continuously input into the bypass diode 730 within the first target time period to detect the impact of the continuous reverse surge current impact on the electrical performance of the bypass diode 730.

[0097] The first reverse pulse current is a reverse pulse current with a current magnitude of a preset value, and the first target duration is a preset duration.

[0098] In actual implementation, the values ​​of the first reverse pulse current and the first target duration may be adjusted according to the specification parameters of the bypass diode 730 , the component parameters of the photovoltaic component connected in parallel with the bypass diode 730 , and the like.

[0099] For example, Figure 8 As shown, the bypass diode 730 to be tested is connected to the test device, and the bypass diode 730 is controlled to be in an environment of a normal temperature of 25° C. through the environmental box 760 and the temperature detection device 761 .

[0100] The first power supply device 710 selects the constant current pulse output mode, inputs a first reverse pulse current of 2A-30A to the bypass diode 730 and lasts for a first target duration of 10 μs, and performs a reverse surge current impact on the bypass diode 730 .

[0101] After the first impact test, the first power supply device 710 outputs a constant voltage pulse of 0V-50V to the bypass diode 730 for 1ms, the current detection device 742 records the second reverse leakage current IR2 of the bypass diode 730, the first power supply device 710 outputs a constant current pulse of 0mA-1mA for 1ms, and the voltage detection device 741 records the second reverse withstand voltage VB2 of the bypass diode 730.

[0102] In some embodiments, inputting a first reverse pulse current into the bypass diode 730 and continuing for a first target duration may include:

[0103] The first reverse pulse current is input to the bypass diode 730 for multiple times continuously, each time the first reverse pulse current is input for a first target time length, and the multiple input first reverse pulse currents are increasing, decreasing or the same.

[0104] In this embodiment, the bypass diode 730 may be subjected to multiple consecutive reverse surge current shocks according to the test requirements of the bypass diode 730 , and the first reverse pulse current corresponding to each reverse surge current shock may increase, decrease, or remain the same.

[0105] For example, the bypass diode 730 is subjected to three consecutive reverse surge current shocks, the first reverse pulse current of the first shock is 2A, the first reverse pulse current of the second shock is 4A, and the first reverse pulse current of the second shock is 8A, and the first reverse pulse current shows an increasing pattern.

[0106] In actual implementation, there may be a certain time interval between two impacts of the first reverse pulse current. For example, there may be a time interval of 1 ms between the two impacts.

[0107] In this embodiment, the first impact test may include multiple impacts of the first reverse pulse current. After the bypass diode 730 is continuously impacted multiple times, the second performance parameter of the bypass diode 730 is obtained.

[0108] In some embodiments, performing a second impulse test on the bypass diode 730 includes:

[0109] The second reverse electric energy is released to the bypass diode 730 within the second target time period.

[0110] It should be noted that when performing the second impact test, the second reverse electrical energy is released to the bypass diode 730 within the second target time period to detect the influence of the instantaneous reverse energy impact on the electrical performance of the bypass diode 730 .

[0111] The second reverse electric energy is reverse electric energy having an electric energy magnitude of a preset value, and the second target duration is a preset duration.

[0112] In actual implementation, the values ​​of the second reverse electric energy and the second target duration may be adjusted according to the specification parameters of the bypass diode 730 , the component parameters of the photovoltaic component connected in parallel with the bypass diode 730 , and the like.

[0113] In this embodiment, a device that can quickly release electrical energy, such as a capacitor 722, can be used to perform an instantaneous reverse energy impact on the bypass diode 730. After the second impact test is completed, the third electrical performance parameter of the bypass diode 730 is obtained.

[0114] For example, Figure 8As shown, the bypass diode 730 to be tested is connected to the test device, and the bypass diode 730 is controlled to be in an environment of a normal temperature of 25° C. through the environmental box 760 and the temperature detection device 761 .

[0115] The second switch 772 is controlled to connect the loop between the second power supply device 720 and the capacitor 722, and the capacitor 722 is charged by the second power supply device 720. According to the test requirements, the second power supply device 720 can adjust the output voltage to 500V-5000V, and the capacitor 722 can be selected to have a specification of 100 pF-10000 pF.

[0116] The second switch 772 is controlled to connect the loop between the capacitor 722 and the bypass diode 730 , and the bypass diode 730 is subjected to an instantaneous reverse energy impact through the discharge of the capacitor 722 .

[0117] In this embodiment, according to the test requirements, the loop resistance between the capacitor 722 and the bypass diode 730 can be adjusted, that is, the adjustable resistor 723 is adjusted to control the loop current.

[0118] It should be noted that during the test, the second isolation circuit 721 can be used to control the direction of the loop current during the discharge of the capacitor 722 to perform a reverse impact on the bypass diode 730 .

[0119] In actual implementation, the second isolation circuit 721 may be a Schottky diode. The Schottky diode allows forward conduction and cuts off reverse conduction. The reverse withstand voltage of the Schottky diode may be 50V-200V.

[0120] After the second impact test is completed, the first switch 771 is closed, the first power supply device 710 selects the constant voltage pulse output mode, outputs a constant voltage pulse of 0V-50V to the bypass diode 730 for 1ms, the current detection device 742 records the third reverse leakage current IR3 of the bypass diode 730, the first power supply device 710 outputs a constant current pulse of 0mA-1mA for 1ms, and the voltage detection device 741 records the third reverse withstand voltage VB3 of the bypass diode 730.

[0121] It is understandable that the first power supply device 710 can provide the bypass diode 730 with conditions for reverse surge current impact and electrical performance parameter testing. The first power supply device 710 can be a low-voltage power supply with two output modes: constant current pulse output and constant voltage pulse output.

[0122] The second power supply device 720 cooperates with the instantaneous discharge device to provide conditions for the bypass diode 730 to perform a reverse energy impact test. The second power supply device 720 can be a high-voltage power supply with a constant voltage output mode, and the output voltage can be adjusted according to demand.

[0123] In some embodiments, releasing the second reverse power to the bypass diode 730 within the second target time period includes:

[0124] The second reverse electric energy is released to the bypass diode 730 for multiple times within the second target time period, and the second reverse electric energy released multiple times increases, decreases or is the same.

[0125] In this embodiment, the bypass diode 730 may be subjected to multiple consecutive instantaneous reverse electrical energy shocks according to the test requirements of the bypass diode 730 , and the second reverse electrical energy corresponding to each reverse electrical energy shock may be increasing, decreasing, or the same.

[0126] For example, the capacitor 722 is used to perform three consecutive instantaneous reverse electric energy shocks on the bypass diode 730, and the second reverse electric energy released by the capacitor 722 gradually increases during the first shock, the second shock, and the third shock.

[0127] In actual implementation, a certain time interval may be provided between two impacts of the second reverse electric energy. For example, 1 ms may be provided between the two impacts.

[0128] In this embodiment, the second impact test may include multiple impacts of the second reverse electrical energy. After the bypass diode 730 is continuously impacted multiple times, the third performance parameter of the bypass diode 730 is obtained.

[0129] It should be noted that there is no execution order requirement for the first impact test and the second impact test. During the actual testing process of the bypass diode 730, the first impact test can be performed first, and the second impact test can be performed after the first impact test is judged to have passed based on the first electrical performance parameters and the second electrical performance parameters. Alternatively, the second impact test can be performed first, and the first impact test can be performed after the second impact test is judged to have passed based on the first electrical performance parameters and the third electrical performance parameters.

[0130] For example, Figure 2 As shown, step 120 may include step 121 and step 122 .

[0131] Step 121 : Perform a first impact test on the bypass diode 730 to obtain a second electrical performance parameter of the bypass diode 730 .

[0132] Step 122 : When it is determined based on the first electrical performance parameter and the second electrical performance parameter that the first impact test has passed, a second impact test is performed on the bypass diode 730 to obtain a third electrical performance parameter of the bypass diode 730 .

[0133] For example, Figure 3 As shown, step 120 may include step 123 and step 124 .

[0134] Step 123 : Perform a second impact test on the bypass diode 730 to obtain a third electrical performance parameter of the bypass diode 730 .

[0135] Step 124 : When it is determined based on the first electrical performance parameter and the third electrical performance parameter that the second impact test has passed, perform the first impact test on the bypass diode 730 to obtain the second electrical performance parameter of the bypass diode 730 .

[0136] It can be understood that the first impact test is performed first. When it is determined that the first impact test fails based on the first electrical performance parameters and the second electrical performance parameters, it indicates that the bypass diode 730 may be a diode product with weak performance or structural defects, and there is no need to perform the second impact test. Similarly, the second impact test is performed first. When it is determined that the second impact test fails based on the first electrical performance parameters and the third electrical performance parameters, there is no need to perform the first impact test.

[0137] In actual implementation, the first electrical performance parameter and the second electrical performance parameter (or the first electrical performance parameter and the second electrical performance parameter) can be subjected to difference, ratio and other operations to determine the change in the electrical performance of the bypass diode 730 before and after the reverse shock test, and to determine whether the bypass diode 730 has passed the first shock test (or the second shock test) based on the impact of the reverse shock of the first shock test (or the second shock test) on the electrical performance of the bypass diode 730.

[0138] In some embodiments, the first electrical performance parameter includes a first reverse leakage current and a first reverse withstand voltage, the second electrical performance parameter includes a second reverse leakage current and a second reverse withstand voltage, and based on the first electrical performance parameter and the second electrical performance parameter, determining that the first impact test is passed may include:

[0139] When the ratio of the second reverse leakage current to the first reverse leakage current is less than or equal to the first ratio threshold, and the ratio of the first withstand voltage difference to the first reverse withstand voltage is less than or equal to the second ratio threshold, it is determined that the first impact test is passed.

[0140] The first withstand voltage difference is the difference between the second reverse withstand voltage and the first reverse withstand voltage, that is, the first withstand voltage difference is the reverse withstand voltage change of the bypass diode 730 after the reverse surge current impacts.

[0141] In this embodiment, the first ratio threshold is a preset ratio critical value used to determine whether the change in the reverse leakage current of the bypass diode 730 after the reverse surge current impact is within a reasonable range of variation, and the second ratio threshold is a preset ratio critical value used to determine whether the change in the reverse withstand voltage of the bypass diode 730 after the reverse surge current impact is within a reasonable range of variation.

[0142] It can be understood that when the ratio of the second reverse leakage current to the first reverse leakage current is less than or equal to the first ratio threshold, it indicates that the change in the reverse leakage current of the bypass diode 730 after the reverse surge current impact is in a reasonable range; when the ratio of the first withstand voltage difference to the first reverse withstand voltage is less than or equal to the second ratio threshold, it indicates that the change in the reverse withstand voltage of the bypass diode 730 after the reverse surge current impact is in a reasonable range; and when the judgment conditions of the first ratio threshold and the second ratio threshold are met at the same time, it indicates that the reverse surge current impact did not break down the bypass diode 730, and the first impact test passed.

[0143] For example, the first reverse leakage current of the bypass diode 730 is IR1, and the first reverse withstand voltage is VB1. The bypass diode 730 is subjected to a first impact test. After the first impact test, the first reverse leakage current of the bypass diode 730 is measured to be IR2, and the first reverse withstand voltage is VB2. The first withstand voltage difference is VB2-VB1.

[0144] Taking the first ratio threshold as 2 and the second ratio threshold as 10% as an example, when (IR2 / IR1)≤2 and ((VB2-VB1) / VB1)≤10%, the first impact test passes; when (IR2 / IR1)>2 or ((VB2-VB1) / VB1)>10%, the first impact test fails.

[0145] In some embodiments, the first electrical performance parameter includes a first reverse leakage current and a first reverse withstand voltage, the third electrical performance parameter includes a third reverse leakage current and a third reverse withstand voltage, and based on the first electrical performance parameter and the third electrical performance parameter, determining that the second impact test is passed includes:

[0146] When the ratio of the third reverse leakage current to the first reverse leakage current is less than or equal to the third ratio threshold, and the ratio of the second withstand voltage difference to the first reverse withstand voltage is less than or equal to the fourth ratio threshold, it is determined that the second impact test is passed.

[0147] The second withstand voltage difference is the difference between the third reverse withstand voltage and the first reverse withstand voltage, that is, the first withstand voltage difference is the reverse withstand voltage change of the bypass diode 730 after the reverse energy impact.

[0148] In this embodiment, the third ratio threshold is a preset ratio critical value for determining whether the change in the reverse leakage current of the bypass diode 730 after the reverse energy impact is within a reasonable range of variation, and the fourth ratio threshold is a preset ratio critical value for determining whether the change in the reverse withstand voltage of the bypass diode 730 after the reverse energy impact is within a reasonable range of variation.

[0149] It can be understood that when the ratio of the third reverse leakage current to the first reverse leakage current is less than or equal to the third ratio threshold, it indicates that the change in the reverse leakage current of the bypass diode 730 after the reverse energy impact is in a reasonable range; when the ratio of the second withstand voltage difference to the first reverse withstand voltage is less than or equal to the fourth ratio threshold, it indicates that the change in the reverse withstand voltage of the bypass diode 730 after the reverse energy impact is in a reasonable range; and when the judgment conditions of the third ratio threshold and the fourth ratio threshold are met at the same time, it indicates that the reverse energy impact did not break down the bypass diode 730, and the second impact test passed.

[0150] For example, the first reverse leakage current of the bypass diode 730 is IR1, and the first reverse withstand voltage is VB1. The bypass diode 730 is subjected to a second impact test. After the second impact test, the third reverse leakage current of the bypass diode 730 is measured to be IR3, and the third reverse withstand voltage is VB3. The second withstand voltage difference is VB3-VB1.

[0151] Taking the third ratio threshold as 2 and the fourth ratio threshold as 10% as an example, when (IR3 / IR1)≤2 and ((VB3-VB1) / VB1)≤10%, the second impact test passes; when (IR3 / IR1)>2 or ((VB3-VB1) / VB1)>10%, the second impact test fails.

[0152] In actual implementation, the values ​​of the first ratio threshold and the third ratio threshold may be the same, and the values ​​of the second ratio threshold and the fourth ratio threshold may be the same.

[0153] In some embodiments, after obtaining the first electrical performance parameter of the bypass diode 730 and before obtaining the fourth electrical performance parameter of the bypass diode 730, the test method of the bypass diode 730 may further include:

[0154] Obtaining a fifth electrical performance parameter corresponding to the bypass diode 730 under a target test temperature environment;

[0155] Obtaining a fourth electrical performance parameter of the bypass diode 730 may include:

[0156] When it is determined based on the fifth electrical performance parameter and the first electrical performance parameter that the environmental test of the target test temperature is passed, the fourth electrical performance parameter is acquired.

[0157] In this embodiment, the temperature of the bypass diode 730 test is controlled to detect the fifth electrical performance parameter of the bypass diode 730 under the target test temperature environment, and based on the fifth electrical performance parameter and the first electrical performance parameter, it is determined whether the bypass diode 730 has weak performance or structural defects.

[0158] It should be noted that the defects of diode products with weak performance or structural defects will be more obvious at high temperatures, and the target test temperature corresponding to obtaining the fifth electrical performance parameter is greater than the test temperature corresponding to obtaining the first electrical performance parameter, the second electrical performance parameter, the third electrical performance parameter, the fourth electrical performance parameter, etc.

[0159] In this embodiment, the environmental test of the target test temperature is performed after obtaining the first electrical performance parameter and before obtaining the fourth electrical performance parameter. When it is determined that the high temperature test of the bypass diode 730 fails based on the fifth electrical performance parameter and the first electrical performance parameter, there is no need to obtain the fourth electrical performance parameter.

[0160] In actual implementation, the environmental test at the target test temperature may be performed before the first shock test and the second shock test, or may be performed after the first shock test and the second shock test.

[0161] For example, Figure 4 As shown, the test method of the bypass diode 730 includes steps 410 to 450 .

[0162] Step 410 : Obtain a first electrical performance parameter of the bypass diode 730 .

[0163] Step 420 , performing a first impact test on the bypass diode 730 to obtain a second electrical performance parameter of the bypass diode 730 , and performing a second impact test on the bypass diode 730 to obtain a third electrical performance parameter of the bypass diode 730 .

[0164] Step 430 : Obtain a fifth electrical performance parameter corresponding to the bypass diode 730 under a target test temperature environment.

[0165] Step 440 : When it is determined that the first impact test, the second impact test, and the environmental test at the target test temperature are passed, obtain a fourth electrical performance parameter of the bypass diode 730 .

[0166] Step 450 : Determine a test result of the bypass diode 730 based on the first electrical performance parameter and the fourth electrical performance parameter.

[0167] In actual implementation, the first electrical performance parameter and the fifth electrical performance parameter can be subjected to difference, ratio and other operations to determine changes in the electrical performance of the bypass diode 730 in a high temperature environment. Based on the impact of the ambient temperature on the electrical performance of the bypass diode 730, it can be determined whether the bypass diode 730 has passed the environmental test of the target test temperature.

[0168] For example, the first electrical performance parameter includes a first reverse leakage current and a first reverse withstand voltage, and the fifth electrical performance parameter includes a fifth reverse leakage current and a fifth reverse withstand voltage.

[0169] The bypass diode 730 is controlled to be in a normal temperature environment of 25° C. through the environmental box 760 and the temperature detection device 761 to obtain the first reverse leakage current IR1 and the first reverse withstand voltage VB1 of the bypass diode 730.

[0170] The bypass diode 730 is controlled to be in a high temperature environment of 75° C. through the environmental box 760 and the temperature detection device 761 , and a fifth reverse leakage current IR5 and a fifth reverse withstand voltage VB5 of the bypass diode 730 are obtained.

[0171] When (IR5 / IR1)≤50 and ((VB5-VB1) / VB1)≤12%, it indicates that the environmental test of the target test temperature has passed. When (IR5 / IR1)>50 or ((VB5-VB1) / VB1)>12%, it indicates that the environmental test of the target test temperature has failed.

[0172] In some embodiments, the target test temperature is 60°C-100°C.

[0173] In this embodiment, different target test temperatures may be selected according to the environment of the area where the bypass diode 730 is installed.

[0174] In actual implementation, the fifth electrical performance parameter corresponding to the bypass diode 730 in the target test temperature environment is obtained. Multiple target test temperatures can be selected. The bypass diode 730 is controlled to be in an environment with different target test temperatures through the environmental chamber 760 and the temperature detection device 761. The fifth electrical performance parameter corresponding to the environment of each target test temperature is obtained, and the influence of temperature rise or temperature drop on the electrical performance of the bypass diode 730 is detected.

[0175] In some embodiments, the first electrical performance parameter, the second electrical performance parameter and the third electrical performance parameter are obtained under a first test condition, the fourth electrical performance parameter is obtained under a second test condition, and the test electrical parameters of the second test condition are greater than the test electrical parameters of the first test condition.

[0176] It can be understood that the fourth electrical performance parameter is a parameter that reflects the change in electrical performance of the bypass diode 730 after experiencing a reverse surge current impact and a reverse energy impact. By increasing the test electrical parameters during parameter collection, the change in the electrical performance of the bypass diode 730 can be highlighted, which helps to improve the detection rate of diode products with weak performance or structural defects.

[0177] It should be noted that the test electrical parameters refer to test parameters such as current and voltage applied to the bypass diode 730 when measuring the electrical performance parameters of the bypass diode 730 .

[0178] For example, the test electrical parameters of the first test condition include a voltage range of 0V-50V for the constant voltage pulse output and a current range of 0mA-1mA for the constant current pulse output.

[0179] like Figure 8 As shown, the bypass diode 730 to be tested is connected to a testing device, and a first reverse leakage current IR1 and a first reverse withstand voltage VB1 of the bypass diode 730 are obtained under a first testing condition.

[0180] After the first impact test is performed, the second reverse leakage current IR2 and the second reverse withstand voltage VB2 of the bypass diode 730 are obtained under the first test condition.

[0181] After the second impact test is performed, the third reverse leakage current IR3 and the third reverse withstand voltage VB3 of the bypass diode 730 are obtained under the first test condition.

[0182] When obtaining the fourth electrical performance parameters, the test electrical parameters of the second test conditions are greater than the test electrical parameters of the first test conditions. The voltage range of the constant voltage pulse output under the second test conditions is increased by 5V compared with the voltage range of the constant voltage pulse output under the first test conditions. The current range of the constant current pulse output under the second test conditions is increased by 10 times compared with the current range of the constant current pulse output under the first test conditions.

[0183] The test electrical parameters of the second test condition include a voltage range of 5V-55V for the constant voltage pulse output and a current range of 1mA-10mA for the constant current pulse output.

[0184] After obtaining the first electrical performance parameter, the second electrical performance parameter and the third electrical performance parameter, a fourth reverse leakage current IR4 and a fourth reverse withstand voltage VB4 of the bypass diode 730 are obtained under the second test condition.

[0185] It should be noted that the test electrical parameters of the second test condition are greater than the test electrical parameters of the first test condition, and the test environment parameters of the second test condition can be equal to the test environment parameters of the first test condition. For example, the first electrical performance parameter, the second electrical performance parameter, the third electrical performance parameter and the fourth electrical performance parameter are all measured under an environment of 25°C.

[0186] In actual implementation, the first electrical performance parameter and the fourth electrical performance parameter may be subjected to difference, ratio and other operations to determine whether the bypass diode 730 passes the test and identify whether the bypass diode 730 is a diode product with weak performance or structural defects.

[0187] In some embodiments, the first electrical performance parameter includes a first reverse leakage current and a first reverse withstand voltage, the fourth electrical performance parameter includes a fourth reverse leakage current and a fourth reverse withstand voltage, and based on the first electrical performance parameter and the fourth electrical performance parameter, determining the test result of the bypass diode 730 includes:

[0188] When the difference between the fourth reverse leakage current and the first reverse leakage current is less than or equal to the first difference threshold, and the difference between the fourth reverse withstand voltage and the first reverse withstand voltage is less than or equal to the second difference threshold, it is determined that the bypass diode 730 has passed the test.

[0189] In this embodiment, the first difference threshold is a preset difference critical value used to determine whether the change in the reverse leakage current of the bypass diode 730 after a reverse shock is within a reasonable range of variation, and the second difference threshold is a preset difference critical value used to determine whether the change in the reverse withstand voltage of the bypass diode 730 after a reverse shock is within a reasonable range of variation.

[0190] It can be understood that when the difference between the fourth reverse leakage current and the first reverse leakage current is less than or equal to the first difference threshold, it indicates that the change in the reverse leakage current of the bypass diode 730 after the reverse impact is in a reasonable range; when the difference between the fourth reverse withstand voltage and the first reverse withstand voltage is less than or equal to the second difference threshold, it indicates that the change in the reverse withstand voltage of the bypass diode 730 after the reverse impact is in a reasonable range; and when the judgment conditions of the first difference threshold and the second difference threshold are met at the same time, it indicates that the bypass diode 730 has the ability to resist reverse impact and the bypass diode 730 passes the test.

[0191] For example, the first reverse leakage current of the bypass diode 730 is IR1, and the first reverse withstand voltage is VB1. After the first impact test and the second impact test are passed, the fourth reverse leakage current of the bypass diode 730 is IR4, and the fourth reverse withstand voltage is VB4.

[0192] Taking the first difference threshold as 10 and the second difference threshold as 1 as an example, when IR4-IR1≤10 and VB5-VB1≤1, the bypass diode 730 passes the test; when IR4-IR1>10 or VB5-VB1>1, the bypass diode 730 fails the test.

[0193] In some embodiments, when it is determined that the bypass diode 730 passes the test, the test method of the bypass diode 730 may further include:

[0194] A sixth electrical performance parameter of the bypass diode 730 is obtained, and based on the sixth electrical performance parameter, a test result of the bypass diode 730 is verified.

[0195] In this embodiment, after determining that the test of the bypass diode 730 has passed based on the fourth electrical performance parameter and the first electrical performance parameter, the electrical performance parameter of the bypass diode 730 can be obtained again, that is, the sixth electrical performance parameter, and the test result of the bypass diode 730 can be verified based on the sixth electrical performance parameter.

[0196] In actual implementation, the test conditions for obtaining the sixth electrical performance parameter and the first electrical performance parameter can be the same. After obtaining the sixth electrical performance parameter, the sixth electrical performance parameter can be compared with the qualified reference value range of the bypass diode 730. When the sixth electrical performance parameter is within the qualified reference value range, the result of the bypass diode 730 passing the test is verified.

[0197] The sixth electrical performance parameter may include parameters such as forward voltage drop, reverse withstand voltage and reverse leakage current.

[0198] It can be understood that after obtaining the first electrical performance parameter, the first electrical performance parameter can also be compared with the qualified reference value range of the bypass diode 730. When the first electrical performance parameter exceeds the qualified reference value range, the bypass diode 730 may have a major defect and is an unqualified product, and there is no need to perform subsequent first impact test, second impact test, and environmental test at the target test temperature.

[0199] Two specific embodiments are described below.

[0200] like Figure 5 As shown, the test method of the bypass diode 730 includes steps 510 to 550 .

[0201] Step 510 : Obtain a first electrical performance parameter of the bypass diode 730 .

[0202] Step 520 , perform a first impact test on the bypass diode 730 to obtain a second electrical performance parameter of the bypass diode 730 , and perform a second impact test on the bypass diode 730 to obtain a third electrical performance parameter of the bypass diode 730 .

[0203] Step 530 , when it is determined that the first impact test passes based on the first electrical performance parameter and the second electrical performance parameter, and when it is determined that the second impact test passes based on the first electrical performance parameter and the third electrical performance parameter, obtain the fourth electrical performance parameter of the bypass diode 730 .

[0204] Step 540 : Determine a test result of the bypass diode 730 based on the first electrical performance parameter and the fourth electrical performance parameter.

[0205] Step 550 : Obtain a sixth electrical performance parameter of the bypass diode 730 , and verify the test result of the bypass diode 730 based on the sixth electrical performance parameter.

[0206] In actual implementation, the bypass diode 730 with weak performance or structural defects is quickly and accurately identified through the first impact test and the second impact test, and the test results of the bypass diode 730 are verified by obtaining electrical performance parameters to ensure the accuracy of the test.

[0207] like Figure 6 As shown, the test method of the bypass diode 730 includes steps 610 to 660 .

[0208] Step 610 : Obtain a first electrical performance parameter of the bypass diode 730 .

[0209] Step 620 , performing a first impact test on the bypass diode 730 to obtain a second electrical performance parameter of the bypass diode 730 , and performing a second impact test on the bypass diode 730 to obtain a third electrical performance parameter of the bypass diode 730 .

[0210] Step 630 : Obtain a fifth electrical performance parameter corresponding to the bypass diode 730 under a target test temperature environment.

[0211] Step 640 : When it is determined that the first impact test, the second impact test, and the environmental test at the target test temperature are passed, obtain a fourth electrical performance parameter of the bypass diode 730 .

[0212] Step 650 : Determine a test result of the bypass diode 730 based on the first electrical performance parameter and the fourth electrical performance parameter.

[0213] Step 660 : Obtain a sixth electrical performance parameter of the bypass diode 730 , and verify the test result of the bypass diode 730 based on the sixth electrical performance parameter.

[0214] In actual implementation, on the basis of the first impact test and the second impact test on the bypass diode 730, the bypass diode 730 is also subjected to a high temperature environment test to quickly and accurately identify the bypass diode 730 with weak performance or structural defects, and verify the test results of the bypass diode 730 by obtaining electrical performance parameters to ensure the accuracy of the test.

[0215] The embodiment of the present application also provides a testing device for the bypass diode 730 .

[0216] like Figure 7 As shown, the test device of the bypass diode 730 includes: a first power supply device 710 , a second power supply device 720 , an electrical performance parameter acquisition device 740 and a test control device 750 .

[0217] The two ends of the first power supply device 710 are respectively connected to the two ends of the bypass diode 730 to be tested. The first power supply device 710 is used to input a reverse pulse current to the bypass diode 730. The first power supply device 710 is also used to provide test conditions for electrical performance parameters of the bypass diode 730.

[0218] In this embodiment, the first power supply device 710 can provide two output modes: constant current pulse output and constant voltage pulse output. When the first power supply device 710 selects the constant current pulse output mode, a reverse pulse current can be input to the bypass diode 730, and a reverse surge current shock can be performed on the bypass diode 730 to achieve a first shock test.

[0219] In actual implementation, the first power supply device 710 may provide test conditions for measuring the first electrical performance parameter, the second electrical performance parameter, and the third electrical performance parameter.

[0220] For example, after the first impact test is completed, the first power supply device 710 outputs a constant voltage pulse of 0V-50V to the bypass diode 730 for 1ms, the current detection device 742 records the second reverse leakage current IR2 of the bypass diode 730, the first power supply device 710 outputs a constant current pulse of 0mA-1mA for 1ms, the voltage detection device 741 records the second reverse withstand voltage VB2 of the bypass diode 730, and the second electrical performance parameters are measured.

[0221] Two ends of the second power supply device 720 of the test device are respectively connected to two ends of the bypass diode 730. The second power supply device 720 is used to release reverse electric energy to the bypass diode 730. The second power supply device 720 is a power supply device for implementing the second impact test.

[0222] It should be noted that the test device may be provided with a first isolation circuit 711 to protect the loop between the first power supply device 710 and the bypass diode 730 to prevent the second power supply device 720 from impacting the first power supply device 710 .

[0223] In actual implementation, the first isolation circuit 711 may be a Schottky diode. The Schottky diode allows forward conduction but cuts off reverse conduction. The reverse withstand voltage of the Schottky diode may be 50V-200V.

[0224] The electrical performance parameter acquisition device 740 is connected to the bypass diode 730 , and the electrical performance parameter acquisition device 740 is used to acquire electrical performance parameters of the bypass diode 730 .

[0225] In actual implementation, the electrical performance parameter collection device 740 may include a voltage detection device 741 and a current detection device 742. When the first power supply device 710 provides test conditions for the electrical performance parameters of the bypass diode 730, the electrical performance parameter collection device 740 collects the first electrical performance parameter, the second electrical performance parameter, the third electrical performance parameter and other electrical performance parameters, for example, reverse leakage current, reverse withstand voltage, forward voltage drop and other parameters.

[0226] The test control device 750 is connected to the first power supply device 710 , the second power supply device 720 and the electrical performance parameter acquisition device 740 . The test control device 750 can be used to execute the above-mentioned test method of the bypass diode 730 to test the bypass diode 730 .

[0227] For example, the first power supply device 710 provides test conditions for the electrical performance parameters of the bypass diode 730, obtains the first electrical performance parameter of the bypass diode 730, the first power supply device 710 provides a reverse pulse current for the bypass diode 730 to perform a first impact test, and obtains the second electrical performance parameter after the first impact test, the second power supply device 720 provides reverse energy for the bypass diode 730 to perform a second impact test, and obtains the third electrical performance parameter after the second impact test, and then obtains the fourth electrical performance parameter of the bypass diode 730, and comprehensively evaluates the reverse impact resistance of the bypass diode 730, so that the bypass diode 730 with weak performance or structural defects can be quickly and accurately identified.

[0228] According to the test device of the bypass diode 730 provided in the embodiment of the present application, through the first impact test simulating the reverse surge current impact and the second impact test simulating the reverse energy impact, the electrical performance parameters of the bypass diode 730 before and after the impact test are obtained, and the reverse impact resistance ability of the bypass diode 730 is detected. The bypass diode 730 with weak performance or structural defects can be quickly and accurately identified, which helps to improve the safety and reliability of the photovoltaic module during operation and reduce economic losses.

[0229] In actual implementation, the second power supply device 720 can cooperate with a device that can quickly release electrical energy, such as a capacitor 722, to perform a reverse energy impact on the bypass diode 730.

[0230] In some embodiments, the test device of the bypass diode 730 may also include a capacitor 722, wherein the two ends of the capacitor 722 are respectively connected to the two ends of the second power supply device 720, the second power supply device 720 is used to charge the capacitor 722, and the capacitor 722 is used to release reverse electrical energy to the bypass diode 730.

[0231] For example, Figure 8As shown, the bypass diode 730 to be tested is connected to the test device, and the bypass diode 730 is controlled to be in an environment of a normal temperature of 25° C. through the environmental box 760 and the temperature detection device 761 .

[0232] The second switch 772 is controlled to connect the loop between the second power supply device 720 and the capacitor 722, and the capacitor 722 is charged by the second power supply device 720. According to the test requirements, the second power supply device 720 can adjust the output voltage to 500V-5000V, and the capacitor 722 can be selected to have a specification of 100 pF-10000 pF.

[0233] The second switch 772 is controlled to connect the loop between the capacitor 722 and the bypass diode 730, and the bypass diode 730 is subjected to an instantaneous reverse energy impact through the discharge of the capacitor 722, thereby realizing the second impact test.

[0234] In some embodiments, an adjustable resistor 723 is provided on the loop connecting the capacitor 722 and the bypass diode 730 , and the adjustable resistor 723 is used to adjust the current on the loop connecting the capacitor 722 and the bypass diode 730 .

[0235] In this embodiment, according to the test requirements, the resistance of the adjustable resistor 723 can be adjusted to control the current in the loop connected to the capacitor 722 and the bypass diode 730 .

[0236] It should be noted that a second isolation device may be provided in the test device, and the direction of the loop current during the discharge of the capacitor 722 may be controlled by the second isolation circuit 721 to perform a reverse impact on the bypass diode 730 .

[0237] In actual implementation, the second isolation circuit 721 may be a Schottky diode. The Schottky diode allows forward conduction and cuts off reverse conduction. The reverse withstand voltage of the Schottky diode may be 50V-200V.

[0238] It can be understood that the first power supply device 710 can provide the bypass diode 730 with conditions for reverse surge current impact and electrical performance parameter testing. The first power supply device 710 can be a low-voltage power supply. The second power supply device 720 can provide the bypass diode 730 with conditions for reverse energy impact testing in conjunction with an instantaneous discharge device. The second power supply device 720 can be a high-voltage power supply and can adjust the output voltage as required.

[0239] In actual implementation, the output voltage of the second power supply device 720 may be adjustable in the range of 500V-5000V.

[0240] In some embodiments, the test device for the bypass diode 730 may further include: an environmental box 760 , in which the bypass diode 730 is placed, and the environmental box 760 is used to provide a test temperature environment for the bypass diode 730 .

[0241] In this embodiment, a temperature detection device 761 is provided in the environmental box 760. The temperature in the environmental box 760 is detected in real time by the temperature detection device 761, and the temperature in the environmental box 760 is controlled within a certain temperature range.

[0242] It is understandable that, in addition to providing a test temperature environment for the bypass diode 730 , the environmental chamber 760 may also be provided with a humidity control device to provide a test humidity environment for the bypass diode 730 .

[0243] In this embodiment, the environmental chamber 760 can provide an environmental test at a target test temperature for the bypass diode 730 to measure the fifth performance parameter corresponding to the bypass diode 730 under the high temperature environment. The environmental chamber 760 can also provide a normal temperature environmental test for the bypass diode 730 to measure the first electrical performance parameter, the second electrical performance parameter, the third electrical performance parameter, the fourth electrical performance parameter and other parameters of the bypass diode 730.

[0244] In some embodiments, the target test temperature may be 60°C-100°C.

[0245] For example, the bypass diode 730 is controlled to be in an environment of a normal temperature of 25° C. by using the environmental box 760 and the temperature detection device 761 to obtain the first reverse leakage current IR1 and the first reverse withstand voltage VB1 of the bypass diode 730 .

[0246] The bypass diode 730 is controlled to be in a high temperature environment of 75° C. through the environmental box 760 and the temperature detection device 761 , and a fifth reverse leakage current IR5 and a fifth reverse withstand voltage VB5 of the bypass diode 730 are obtained.

[0247] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0248] In the description of this application, "first feature" or "second feature" may include one or more of the features.

[0249] In the description of the present application, “plurality” means two or more.

[0250] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0251] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. A method for testing a bypass diode of a photovoltaic module, characterized in that: include: Obtaining a first electrical performance parameter of the bypass diode; Performing a first impact test on the bypass diode to obtain a second electrical performance parameter of the bypass diode, and performing a second impact test on the bypass diode to obtain a third electrical performance parameter of the bypass diode; When it is determined that the first impact test is passed based on the first electrical performance parameter and the second electrical performance parameter, and when it is determined that the second impact test is passed based on the first electrical performance parameter and the third electrical performance parameter, acquiring a fourth electrical performance parameter of the bypass diode; Determining a test result of the bypass diode based on the first electrical performance parameter and the fourth electrical performance parameter; The first impact test is a test of inputting a reverse pulse current into the bypass diode, and the second impact test is a test of releasing reverse electrical energy into the bypass diode.

2. The method for testing bypass diodes of photovoltaic modules according to claim 1, characterized in that: Performing a first impact test on the bypass diode includes: A first reverse pulse current is input into the bypass diode and lasts for a first target time period.

3. The method for testing bypass diodes of photovoltaic modules according to claim 2, characterized in that: The step of inputting a first reverse pulse current into the bypass diode for a first target duration includes: The first reverse pulse current is input to the bypass diode multiple times continuously, each time the first reverse pulse current is input lasts for the first target duration, and the multiple input first reverse pulse currents are increasing, decreasing or the same.

4. The method for testing bypass diodes of photovoltaic modules according to claim 1, characterized in that: The performing a second impact test on the bypass diode comprises: The second reverse electric energy is released to the bypass diode within a second target time period.

5. The method for testing bypass diodes of photovoltaic modules according to claim 4, characterized in that: The releasing the second reverse electric energy to the bypass diode within the second target time period includes: The second reverse electric energy is released to the bypass diode multiple times within the second target time period, and the second reverse electric energy released multiple times is increasing, decreasing or the same.

6. The method for testing bypass diodes of photovoltaic modules according to any one of claims 1 to 5, characterized in that: The first electrical performance parameter includes a first reverse leakage current and a first reverse withstand voltage, the second electrical performance parameter includes a second reverse leakage current and a second reverse withstand voltage, and determining that the first impact test is passed based on the first electrical performance parameter and the second electrical performance parameter includes: When the ratio of the second reverse leakage current to the first reverse leakage current is less than or equal to a first ratio threshold, and the ratio of the first withstand voltage difference to the first reverse withstand voltage is less than or equal to a second ratio threshold, it is determined that the first impact test has passed, and the first withstand voltage difference is the difference between the second reverse withstand voltage and the first reverse withstand voltage.

7. The method for testing bypass diodes of photovoltaic modules according to any one of claims 1 to 5, characterized in that: The first electrical performance parameter includes a first reverse leakage current and a first reverse withstand voltage, the third electrical performance parameter includes a third reverse leakage current and a third reverse withstand voltage, and determining that the second impact test is passed based on the first electrical performance parameter and the third electrical performance parameter includes: When the ratio of the third reverse leakage current to the first reverse leakage current is less than or equal to a third ratio threshold, and the ratio of the second withstand voltage difference to the first reverse withstand voltage is less than or equal to a fourth ratio threshold, it is determined that the second impact test is passed, and the second withstand voltage difference is the difference between the third reverse withstand voltage and the first reverse withstand voltage.

8. The method for testing bypass diodes of photovoltaic modules according to any one of claims 1 to 5, characterized in that: After acquiring the first electrical performance parameter of the bypass diode and before acquiring the fourth electrical performance parameter of the bypass diode, the method further includes: Obtaining a fifth electrical performance parameter corresponding to the bypass diode under a target test temperature environment; The obtaining of a fourth electrical performance parameter of the bypass diode includes: When it is determined based on the fifth electrical performance parameter and the first electrical performance parameter that the environmental test at the target test temperature is passed, the fourth electrical performance parameter is acquired.

9. The method for testing bypass diodes of photovoltaic modules according to claim 8, characterized in that: The target test temperature is 60°C-100°C.

10. The method for testing bypass diodes of photovoltaic modules according to any one of claims 1 to 5, characterized in that: The first electrical performance parameter, the second electrical performance parameter and the third electrical performance parameter are obtained under a first test condition, the fourth electrical performance parameter is obtained under a second test condition, and the test electrical parameters of the second test condition are greater than the test electrical parameters of the first test condition.

11. The method for testing bypass diodes of photovoltaic modules according to any one of claims 1 to 5, characterized in that: The first electrical performance parameter includes a first reverse leakage current and a first reverse withstand voltage, the fourth electrical performance parameter includes a fourth reverse leakage current and a fourth reverse withstand voltage, and determining the test result of the bypass diode based on the first electrical performance parameter and the fourth electrical performance parameter includes: When the difference between the fourth reverse leakage current and the first reverse leakage current is less than or equal to a first difference threshold, and the difference between the fourth reverse withstand voltage and the first reverse withstand voltage is less than or equal to a second difference threshold, it is determined that the bypass diode test has passed.

12. The method for testing bypass diodes of photovoltaic modules according to claim 11, characterized in that: In the case of determining that the bypass diode test passes, the method further includes: A sixth electrical performance parameter of the bypass diode is obtained, and based on the sixth electrical performance parameter, a test result of the bypass diode is verified.

13. A test device for a bypass diode of a photovoltaic module, characterized in that: include: A first power supply device, wherein two ends of the first power supply device are respectively connected to two ends of a bypass diode to be tested, the first power supply device is used to input a reverse pulse current to the bypass diode, and the first power supply device is also used to provide a test condition for an electrical performance parameter of the bypass diode; A second power supply device, two ends of the second power supply device are respectively connected to two ends of the bypass diode, and the second power supply device is used to release reverse power to the bypass diode; An electrical performance parameter acquisition device, the electrical performance parameter acquisition device is connected to the bypass diode, and the electrical performance parameter acquisition device is used to acquire electrical performance parameters of the bypass diode; A test control device, wherein the test control device is connected to the first power supply device, the second power supply device and the electrical performance parameter acquisition device, and the test control device is used to execute the test method for the bypass diode of the photovoltaic module according to any one of claims 1 to 12 to test the bypass diode.

14. The test device for bypass diodes of photovoltaic modules according to claim 13, characterized in that: Also includes: A capacitor, two ends of which are respectively connected to two ends of the second power supply device, the second power supply device is used to charge the capacitor, and the capacitor is used to release reverse electric energy to the bypass diode.

15. The test device for bypass diodes of photovoltaic modules according to claim 14, characterized in that: An adjustable resistor is provided on the loop connecting the capacitor and the bypass diode, and the adjustable resistor is used to adjust the current on the loop connecting the capacitor and the bypass diode.

16. The test device for bypass diodes of photovoltaic modules according to any one of claims 13 to 15, characterized in that: Also includes: An environmental box, wherein the bypass diode is placed in the environmental box, and wherein the environmental box is used to provide a test temperature environment for the bypass diode.

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