Perovskite solar cell and preparation method thereof, photovoltaic module and photovoltaic system

Abstract

This application provides a perovskite solar cell, its fabrication method, photovoltaic module, and photovoltaic system, relating to the field of perovskite solar cell technology. The perovskite solar cell includes: a self-assembled monolayer, an interface modification layer, and a perovskite light-absorbing layer stacked sequentially; the interface modification layer is made of acetophenone oxime. Introducing an acetophenone oxime interface modification layer between the self-assembled monolayer and the perovskite light-absorbing layer can improve the poor wettability of the self-assembled monolayer caused by SAM molecular materials, effectively alleviate the uneven coverage of the perovskite film, and facilitate the formation of a dense and highly crystalline perovskite light-absorbing layer. Simultaneously, the unsaturated N atoms in the oxime group can passivate defects at the interface between the perovskite light-absorbing layer and the self-assembled monolayer, and can also react with free Pb. + Coordination is performed to improve the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of perovskite solar cells.

Description

Technical Field

[0001] This application relates to the field of perovskite solar cell technology, and in particular to a perovskite solar cell and its preparation method, photovoltaic module and photovoltaic system. Background Technology

[0002] Perovskite materials originally referred to a mineral composed of the inorganic calcium titanate (CaTiO3), but later came to refer to a family of compounds with an ABX3 structure. Perovskite materials can be used to fabricate perovskite solar cells (PSCs). Perovskite solar cells have broad application prospects due to their low-temperature solution processability and excellent photoelectric properties. Besides engineering the composition and crystallization kinetics of perovskite, interface engineering has been used as an effective tool to improve the efficiency and stability of perovskite solar cells. In perovskite solar cells, the hole-selective layer (HSL) has a crucial impact on device performance. Recently, self-assembled monolayers (SAMs) have been used as effective hole-selective layers (HSLs) to replace traditional organic hole transport layers (HTLs).

[0003] Self-assembled monolayers (SAMs) offer advantages such as easily tunable perovskite energy level alignment, less parasitic absorption, sufficient stability, and ease of fabrication, making them compatible with low-cost and scalable production. SAM molecules in SAMs typically include an anchor group that can bind to the substrate, a flexible spacer group providing sufficient rotational freedom for self-assembly, and a functional head group to facilitate efficient pore extraction. Through rational molecular design, ultrathin and highly efficient hole-selective layers (HSLs) can be formed. As hole-selective layers (HSLs), SAMs can significantly reduce charge transport losses, thereby increasing the short-circuit current density (JSC) and open-circuit voltage (VOC) in perovskite solar cells, achieving high power conversion efficiency. However, these SAMs suffer from poor wettability of the SAM molecule material, leading to uneven perovskite film coverage.

[0004] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Summary of the Invention

[0005] This application provides a perovskite solar cell, its fabrication method, a photovoltaic module, and a photovoltaic system to solve or alleviate the technical problems mentioned above. This application introduces an acetophenone oxime interface modification layer between the self-assembled monolayer and the perovskite light-absorbing layer. This effectively improves the poor wettability of the self-assembled monolayer caused by SAM molecular materials, alleviates the uneven coverage of the perovskite film, and facilitates the formation of a dense and highly crystalline perovskite light-absorbing layer. Simultaneously, the unsaturated N atoms in the oxime group can passivate defects at the interface between the perovskite light-absorbing layer and the self-assembled monolayer, and can also react with free Pb. + Coordination is performed to improve the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of perovskite solar cells.

[0006] To achieve the above objectives, this application adopts the following technical solution:

[0007] A perovskite solar cell includes: a self-assembled monolayer, an interface modification layer, and a perovskite light-absorbing layer stacked sequentially; the material of the interface modification layer includes acetophenone oxime.

[0008] In some embodiments, the thickness of the interface modification layer is 0.5~15nm.

[0009] In some embodiments, the thickness of the interface modification layer is 1~10nm.

[0010] In some embodiments, the interface modification layer is formed based on an acetophenone oxime solution; the acetophenone oxime solution includes acetophenone oxime and an organic solvent; wherein the organic solvent includes one or more of ethanol and isopropanol.

[0011] In some embodiments, the concentration of acetophenone oxime in the acetophenone oxime solution is 0.2~1.5 mg / ml.

[0012] In some embodiments, the concentration of acetophenone oxime in the acetophenone oxime solution is 0.4~1.2 mg / ml.

[0013] In some embodiments, the material of the self-assembled monolayer includes one or more of the following: monomolecule self-assembled materials containing phosphate groups and monomolecule self-assembled materials containing carboxylic acid groups.

[0014] In some embodiments, the self-assembled monolayer is formed based on a SAM solution; the SAM solution includes SAM and a polar solvent; wherein the polar solvent includes one or more of ethanol and isopropanol, and the SAM includes one or more of a phosphate-containing monomolecular self-assembled material and a carboxylic acid-containing monomolecular self-assembled material.

[0015] In some embodiments, the concentration of SAM in the SAM solution is 0.2~1.0 mg / ml.

[0016] In some embodiments, the perovskite light-absorbing layer is formed from a perovskite precursor solution; the perovskite precursor solution includes: perovskite material and solvent;

[0017] The perovskite material includes any one of FAMAPbI, FACsPbI3, and FAMACsPbI3;

[0018] The solvent includes any one of a mixed solution of N,N-dimethylformamide and dimethyl sulfoxide, or a mixed solution of γ-butyrolactone and N-methylpyrrolidone; the volume ratio of N,N-dimethylformamide to dimethyl sulfoxide in the mixed solution of N,N-dimethylformamide and dimethyl sulfoxide is 3~5:1; the volume ratio of γ-butyrolactone to N-methylpyrrolidone in the mixed solution of γ-butyrolactone and N-methylpyrrolidone is 3~5:1.

[0019] In some embodiments, a conductive substrate, an electron transport layer, a hole blocking layer, and a metal electrode are also included.

[0020] The conductive substrate comprises, in sequence, the self-assembled monolayer, the interface modification layer, the perovskite light absorption layer, the electron transport layer, the hole blocking layer, and the metal electrode.

[0021] This application also provides a method for fabricating a perovskite solar cell, comprising: sequentially fabricating a self-assembled monolayer, an interface modification layer, and a perovskite light-absorbing layer on a conductive substrate;

[0022] The material of the interface modification layer includes acetophenone oxime.

[0023] In some embodiments, after preparing the self-assembled monolayer and before preparing the interface modification layer, a first annealing is performed; the annealing temperature of the first annealing is 100~120℃ and the annealing time is 10~15min.

[0024] And / or, after preparing the interface modification layer and before preparing the perovskite light absorption layer, a second annealing is performed; the annealing temperature of the second annealing is 100~120℃ and the annealing time is 10~15min;

[0025] And / or, after preparing the perovskite light-absorbing layer, before preparing other functional layers on the perovskite light-absorbing layer, a third annealing is performed; the annealing temperature of the third annealing is 100~150℃, and the annealing time is 15~35min.

[0026] This application also provides a photovoltaic cell module, including the above-described perovskite solar cell; and / or

[0027] The perovskite solar cells prepared by the above method.

[0028] This application also provides a photovoltaic system, including the photovoltaic cell module described above.

[0029] The embodiments of this application employing the above-described technical solution may have the following advantages:

[0030] Introducing an acetophenone oxime interface modification layer between the self-assembled monolayer and the perovskite light-absorbing layer can effectively improve the poor wettability of the self-assembled monolayer caused by SAM molecular materials, alleviate the uneven coverage of the perovskite film, and facilitate the formation of a dense and highly crystalline perovskite light-absorbing layer. Simultaneously, the unsaturated nitrogen atoms in the oxime group can passivate defects at the interface between the perovskite light-absorbing layer and the self-assembled monolayer, and can also react with free Pb. + Coordination is performed to improve the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of perovskite solar cells. Attached Figure Description

[0031] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments disclosed in this application and should not be construed as limiting the scope of this application.

[0032] Figure 1 This is a schematic diagram of the structure of the perovskite solar cell provided in the embodiments of this application;

[0033] Figure 2 This is a SEM image of the perovskite light-absorbing layer provided in Embodiment 1 of this application;

[0034] Figure 3 This is a SEM image of the perovskite light-absorbing layer provided in Comparative Example 1 of this application;

[0035] Explanation of reference numerals in the attached figures:

[0036] 1. Conductive substrate; 2. Self-assembled monolayer; 3. Interface modification layer; 4. Perovskite light absorption layer; 5. Electron transport layer; 6. Hole blocking layer; 7. Metal electrode. Detailed Implementation

[0037] The embodiments of this application are described in detail below, examples of which are illustrated in the accompanying drawings. In the drawings, for clarity, the dimensions of layers, regions, and elements, as well as their relative dimensions, may be exaggerated. Throughout, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0038] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this disclosure.

[0039] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0040] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0041] In this application, when numerical intervals (i.e., numerical ranges) are involved, unless otherwise specified, the distribution of selectable numerical values ​​within the numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that numerical interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed in this application should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include percentage intervals, ratio intervals, proportion intervals, etc.

[0042] This application aims to provide a perovskite solar cell, its fabrication method, photovoltaic module, and photovoltaic system. By introducing an acetophenone oxime interface modification layer between the self-assembled monolayer and the perovskite light-absorbing layer, the poor wettability of the self-assembled monolayer caused by SAM molecular materials can be effectively improved. This effectively alleviates the uneven coverage of the perovskite film, facilitating the formation of a dense and highly crystalline perovskite light-absorbing layer. Simultaneously, the unsaturated N atoms in the oxime group can passivate defects at the interface between the perovskite light-absorbing layer and the self-assembled monolayer, and can also react with free Pb. + Coordination is performed to improve the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of perovskite solar cells.

[0043] Exemplary embodiments of the present application will now be described in more detail with reference to the accompanying drawings. It should be understood that these exemplary embodiments may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein.

[0044] This application provides a perovskite solar cell, comprising: a self-assembled monolayer, an interface modification layer, and a perovskite light-absorbing layer stacked sequentially; the material of the interface modification layer includes acetophenone oxime.

[0045] In this embodiment, the thickness of the self-assembled monolayer can be 10-100 nm (e.g., 20 nm, 30 nm, 40 nm, 60 nm, 80 nm, 100 nm). The fabrication method of the self-assembled monolayer can include one or more of slot coating, spin coating, and blade coating. In this embodiment, other functional layers may also be included; the required functional layers can be introduced as needed to achieve specific functions.

[0046] In this embodiment, the thickness of the interface modification layer can be 1-20 nm (e.g., 1 nm, 5 nm, 10 nm, 15 nm, 20 nm). The preparation method of the interface modification layer can include one or more of the following: slot coating, spin coating, and blade coating.

[0047] In this embodiment, the perovskite light-absorbing layer is made of perovskite material. The thickness of the perovskite light-absorbing layer can be 300-800 nm. The perovskite material has an ABX3 structure; A is a monovalent cation; B is a divalent cation; and X is a monovalent anion. More specifically, A includes, but is not limited to, one or more monovalent cation mixtures selected from cesium (Cs), rubidium (Rb), methylamino (CH3NH3), and formamidinyl (CH2(NH2)2); B includes, but is not limited to, one or more divalent cation mixtures selected from lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); and X includes, but is not limited to, one or more monovalent anion mixtures selected from iodine (I), bromine (Br), chloride (Cl), fluorine (F), and thiocyanate (SCN).

[0048] In this embodiment, the perovskite light-absorbing layer is prepared by one or more of the following methods: spin coating, blade coating, vapor deposition, printing, spraying, spray pyrolysis, and slot coating. That is, a perovskite light-absorbing layer is formed on the surface of a self-assembled monolayer using methods such as spin coating or blade coating. Different preparation methods may slightly affect the crystallization of the perovskite light-absorbing layer; the appropriate preparation method can be selected according to actual needs. When coating the perovskite light-absorbing layer onto the surface of the self-assembled monolayer using a one-step spin coating or slot coating method, the coating speed can be 4000-5000 rpm / min (e.g., 4000 rpm / min, 4500 rpm / min, 5000 rpm / min), and the coating time can be 30-40 s (e.g., 30 s, 35 s, 40 s).

[0049] In this embodiment, an acetophenone oxime interface modification layer is introduced between the self-assembled monolayer and the perovskite light-absorbing layer. This effectively improves the poor wettability of the self-assembled monolayer caused by SAM molecular materials, alleviates the uneven coverage of the perovskite film, and facilitates the formation of a dense and highly crystalline perovskite light-absorbing layer. Simultaneously, the unsaturated N atoms in the oxime group can passivate defects at the interface between the perovskite light-absorbing layer and the self-assembled monolayer, and can also react with free Pb. + Coordination is performed to improve the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of perovskite solar cells.

[0050] In optional embodiments, the thickness of the interface modification layer is 0.5~15nm (e.g., 0.5nm, 1nm, 3nm, 5nm, 8nm, 10nm, 12nm, 13nm, 15nm). Controlling the thickness of the interface modification layer can optimize the contact between the self-assembled monolayer and the perovskite light-absorbing layer, improve the hole extraction and transport efficiency, thereby improving the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of the perovskite solar cell.

[0051] In an optional embodiment, the thickness of the interface modification layer is 1~10nm (e.g., 1nm, 3nm, 5nm, 8nm, 10nm).

[0052] In this embodiment, optimizing the thickness of the interface modification layer can optimize the contact between the self-assembled monolayer and the perovskite light absorption layer, improve the hole extraction and transmission efficiency, and thus improve the short-circuit current density, open-circuit voltage and photoelectric conversion efficiency of the perovskite solar cell.

[0053] In an optional embodiment, the interface modification layer is formed based on an acetophenone oxime solution; the acetophenone oxime solution includes acetophenone oxime and an organic solvent; wherein the organic solvent includes one or more of ethanol and isopropanol.

[0054] In this embodiment, optimizing the material and solvent of the interface modification layer can optimize the contact between the self-assembled monolayer and the perovskite light absorption layer, promote the effective injection and transport of holes, and thereby improve the short-circuit current density, open-circuit voltage and photoelectric conversion efficiency of the perovskite solar cell.

[0055] In an optional embodiment, the concentration of acetophenone oxime in the acetophenone oxime solution is 0.2~1.5 mg / ml (e.g., 0.2 mg / ml, 0.4 mg / ml, 0.6 mg / ml, 0.8 mg / ml, 1.0 mg / ml, 1.2 mg / ml, 1.5 mg / ml). Controlling the concentration of acetophenone oxime can optimize the contact between the self-assembled monolayer and the perovskite light-absorbing layer, promote efficient hole injection and transport, thereby improving the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of the perovskite solar cell.

[0056] In an optional embodiment, the concentration of acetophenone oxime in the acetophenone oxime solution is 0.4~1.2 mg / ml (e.g., 0.4 mg / ml, 0.6 mg / ml, 0.8 mg / ml, 1.0 mg / ml, 1.2 mg / ml).

[0057] In the embodiments of this application, optimizing the concentration of acetophenone oxime can optimize the contact between the self-assembled monolayer and the perovskite light-absorbing layer, promote the effective injection and transport of holes, thereby improving the short-circuit current density, open-circuit voltage and photoelectric conversion efficiency of the perovskite solar cell.

[0058] In an optional embodiment, the material of the self-assembled monolayer includes one or more of the following: monomolecular self-assembled materials containing phosphate groups and monomolecular self-assembled materials containing carboxylic acid groups.

[0059] In this embodiment, the performance of perovskite solar cells is improved by introducing an acetophenone oxime interface modification layer between the self-assembled monolayer and the perovskite light-absorbing layer. This method has advantages such as simple preparation process, low material cost, significant passivation effect, significant improvement in the wettability of the self-assembled monolayer, applicability to both phosphate-containing and carboxylic acid-containing monomolecular self-assembled materials, and suitability for commercial production.

[0060] In an optional embodiment, the self-assembled monolayer is formed based on a SAM solution; the SAM solution includes SAM and a polar solvent; wherein the polar solvent includes one or more of ethanol and isopropanol, and the SAM includes one or more of a phosphate-containing monomolecular self-assembled material and a carboxylic acid-containing monomolecular self-assembled material.

[0061] In this embodiment, SAM includes one or more of the following: MeO-2PACZ ([2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid), 2PACZ ([2-(9H-carbazole-9-yl)ethyl]phosphonic acid), Me-4PACZ ([4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid), and porphyrin-SAMs (porphyrin-SAMs are porphyrin derivatives containing a porphyrin macrocyclic structure and a carboxylic acid group). In this embodiment, the amount of SAM added to the SAM solution can be limited according to actual needs.

[0062] In the embodiments of this application, optimizing the materials and solvents of the self-assembled monolayer can optimize the contact between the self-assembled monolayer and the acetophenone oxime interface modification layer, effectively improve the wettability of the self-assembled monolayer, facilitate the formation of a dense and high-crystal-quality perovskite light-absorbing layer, thereby improving the short-circuit current density, open-circuit voltage and photoelectric conversion efficiency of the perovskite solar cell.

[0063] In an optional embodiment, the concentration of SAM in the SAM solution is 0.2~1.0 mg / ml (e.g., 0.2 mg / ml, 0.3 mg / ml, 0.4 mg / ml, 0.5 mg / ml, 0.6 mg / ml, 0.7 mg / ml, 0.8 mg / ml, 0.9 mg / ml, 1.0 mg / ml).

[0064] In this embodiment, optimizing the concentration of SAM can effectively improve the wettability of the self-assembled monolayer, facilitating the formation of a dense and high-crystal-quality perovskite light-absorbing layer, thereby improving the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of the perovskite solar cell.

[0065] In an optional embodiment, the perovskite light-absorbing layer is formed from a perovskite precursor solution; the perovskite precursor solution includes: perovskite material and solvent;

[0066] The perovskite material includes any one of FAMAPbI, FACsPbI3, and FAMACsPbI3;

[0067] The solvent includes any one of a mixed solution of N,N-dimethylformamide and dimethyl sulfoxide, or a mixed solution of γ-butyrolactone and N-methylpyrrolidone; the volume ratio of N,N-dimethylformamide to dimethyl sulfoxide in the mixed solution of N,N-dimethylformamide and dimethyl sulfoxide is 3 to 5:1 (e.g., 3:1, 4:1, 5:1); the volume ratio of γ-butyrolactone to N-methylpyrrolidone in the mixed solution of γ-butyrolactone and N-methylpyrrolidone is (e.g., 3:1, 4:1, 5:1).

[0068] In this embodiment, by optimizing the type of perovskite material and adjusting the selection and ratio of solvent, the crystal quality and morphology of the perovskite light absorption layer can be optimized, which can further improve the short-circuit current density, open-circuit voltage and photoelectric conversion efficiency of perovskite solar cells.

[0069] In optional embodiments, it further includes a conductive substrate, an electron transport layer, a hole blocking layer, and a metal electrode;

[0070] The conductive substrate comprises, in sequence, the self-assembled monolayer, the interface modification layer, the perovskite light absorption layer, the electron transport layer, the hole blocking layer, and the metal electrode.

[0071] In this embodiment, other functional layers may also be included. The required functional layers can be introduced as needed to achieve specific functions. The conductive substrate includes one or more of FTO glass, ITO glass, and flexible ITO conductive substrate. The hole-blocking layer can be made of BCP (Bathocuproine, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), and the preparation method of the hole-blocking layer can include one or more of slit coating, spin coating, and blade coating. The thickness of the hole-blocking layer can be 8-15 nm (e.g., 8 nm, 10 nm, 12 nm, 15 nm). The electron transport layer can be made of titanium dioxide (TiO2), tin oxide (SnO2), zinc oxide (ZnO), or fullerene (C). 60 The electron transport layer can be fabricated using one or more n-type semiconductor materials such as graphene and fullerene derivatives (PCBM). It can be prepared by deposition methods including, but not limited to, electron beam evaporation, thermal evaporation, magnetron sputtering, atomic layer deposition, spin coating, and blade coating. The thickness of the electron transport layer can be 20-40 nm (e.g., 20 nm, 30 nm, 40 nm). The metal electrodes can be made of gold, palladium, silver, titanium, chromium, nickel, aluminum, copper, indium tin oxide (ITO), indium zinc oxide (IZO), etc. The thickness of the metal electrodes can be 60-100 nm (e.g., 60 nm, 80 nm, 100 nm).

[0072] In this embodiment, the performance of perovskite solar cells is improved by introducing an acetophenone oxime interface modification layer between the self-assembled monolayer and the perovskite light-absorbing layer. This method has advantages such as simple preparation process, low material cost, significant passivation effect, significant improvement in the wettability of the self-assembled monolayer, applicability to both phosphate-containing and carboxylic acid-containing monomolecular self-assembled materials, and suitability for commercial production.

[0073] This application also provides a method for fabricating a perovskite solar cell, comprising: sequentially fabricating a self-assembled monolayer, an interface modification layer, and a perovskite light-absorbing layer on a conductive substrate;

[0074] The material of the interface modification layer includes acetophenone oxime.

[0075] In this embodiment, the performance of perovskite solar cells is improved by introducing an acetophenone oxime interface modification layer between the self-assembled monolayer and the perovskite light-absorbing layer. This method has advantages such as simple preparation process, low material cost, significant passivation effect, significant improvement in the wettability of the self-assembled monolayer, applicability to both phosphate-containing and carboxylic acid-containing monomolecular self-assembled materials, and suitability for commercial production.

[0076] In an optional embodiment, after preparing the self-assembled monolayer and before preparing the interface modification layer, a first annealing is performed; the annealing temperature of the first annealing is 100~120℃ (e.g., 100℃, 110℃, 120℃), and the annealing time is 10~15min (e.g., 10min, 11min, 12min, 13min, 14min, 15min).

[0077] And / or, after preparing the interface modification layer and before preparing the perovskite light absorption layer, a second annealing is performed; the annealing temperature of the second annealing is 100~120℃ (e.g., 100℃, 110℃, 120℃), and the annealing time is 10~15min (e.g., 10min, 11min, 12min, 13min, 14min, 15min).

[0078] And / or, after preparing the perovskite light-absorbing layer and before preparing other functional layers on the perovskite light-absorbing layer, a third annealing is performed; the annealing temperature of the third annealing is 100~150℃ (e.g., 100℃, 110℃, 120℃, 130℃, 140℃, 150℃), and the annealing time is 15~35min (e.g., 15min, 20min, 25min, 30min, 35min).

[0079] In this embodiment, optimizing the annealing process of the self-assembled monolayer can optimize the contact between the self-assembled monolayer and the acetophenone oxime interface modification layer, effectively improving the wettability of the self-assembled monolayer and facilitating the formation of a dense and high-quality perovskite light-absorbing layer, thereby improving the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of the perovskite solar cell. Optimizing the annealing process of the interface modification layer can optimize the contact between the self-assembled monolayer and the perovskite light-absorbing layer, promoting effective hole injection and transport, thereby improving the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of the perovskite solar cell. Optimizing the annealing process of the perovskite light-absorbing layer can improve the crystal quality and morphology of the prepared perovskite light-absorbing layer, which is beneficial to improving the photoelectric conversion efficiency of the perovskite solar cell.

[0080] The following specific embodiments provide a more detailed description of this application, but should not be construed as limiting the application. Any modifications or substitutions made to the methods, steps, or conditions of this application without departing from the spirit and substance of this application are within the scope of this application.

[0081] Example 1

[0082] A perovskite solar cell, such as Figure 1 As shown, it includes: a conductive substrate 1, a self-assembled monolayer 2, an interface modification layer 3, a perovskite light absorption layer 4, an electron transport layer 5, a hole blocking layer 6, and a metal electrode 7, which are stacked sequentially.

[0083] The specific fabrication process of perovskite solar cells is as follows:

[0084] Step 100: Pretreatment of conductive substrate 1: Using FTO (fluorine-doped SnO2 conductive glass) glass as conductive substrate 1, the conductive substrate 1 is cleaned.

[0085] Step 101: Place the conductive substrate 1 in an ultrasonic cleaning instrument and use deionized water, isopropanol and ethanol to ultrasonically clean the conductive substrate 1 in sequence. Each cleaning step takes 20 minutes. Use a nitrogen (N2) gas gun to dry the conductive substrate 1 to obtain the cleaned conductive substrate 1.

[0086] Step 102: Treat the cleaned conductive substrate 1 with UV-zone (ultraviolet ozone) for 10 minutes to obtain the substrate to be used;

[0087] Step 200: Preparation of self-assembled monolayer 2

[0088] Step 201: Dissolve Me-4PACZ ([4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid) in ethanol, stir, and prepare a Me-4PACZ solution with a concentration of 0.6 mg / ml;

[0089] Step 202: Using spin coating, the Me-4PACZ solution is coated onto the substrate to be used at a coating speed of 3000 rpm to obtain the first target substrate;

[0090] Step 203: Anneal the first target substrate at 100°C for 10 min to form a self-assembled monolayer 2 with a thickness of 10 nm;

[0091] Step 300: Preparation of interface modification layer 3

[0092] Step 301: Dissolve acetophenone oxime in an ethanol solution, stir, and prepare 2 ml of acetophenone oxime solution with a concentration of 0.8 mg / ml;

[0093] Step 302: Spin-coat the acetophenone oxime solution onto the self-assembled monolayer 2 at a speed of 3000 rpm; to obtain the second target substrate;

[0094] Step 303: Anneal the second target substrate at 100°C for 10 min to form an interface modification layer 3 with a thickness of 10 nm;

[0095] Step 400: Preparation of perovskite light-absorbing layer 4

[0096] Step 401: Dissolve 1.6 mol of FAPbI3 perovskite solution in 1 ml of solvent with a volume ratio of DMF:NMP = 4:1, stir for 2 h to obtain perovskite precursor solution;

[0097] Step 402: Using a one-step spin coating method, the perovskite precursor solution is spin-coated onto the interface modification layer 3 at a coating speed of 5000 rpm for 30 seconds. 5 seconds before the end of the spin coating deposition, 300 μL of anisole is rapidly dropped onto the surface of the perovskite layer to form a perovskite wet film, thus obtaining the third target substrate.

[0098] Step 403: Anneal the third target substrate at a temperature of 150°C for 15 minutes to form a perovskite light-absorbing layer 4 with a thickness of 500 nm.

[0099] Step 500: Fabrication of electron transport layer 5

[0100] Step 501: Deposit a 30 nm thick C layer onto the perovskite light-absorbing layer 4 at a rate of 0.5 Å / s. 60 (Fullerene) layer as electron transport layer 5;

[0101] Step 600: Preparation of hole blocking layer 6

[0102] Step 601: Deposit a 6 nm thick BCP (Bathocuproine, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) layer as a hole blocking layer 6 on the electron transport layer 5 at a rate of 0.5 Å / s.

[0103] Step 700: Preparation of metal electrode 7

[0104] Step 701: A 110 nm silver electrode is deposited on the hole-blocking layer 6 using a thermal evaporation gold film deposition method to serve as the metal electrode 7, thus obtaining the perovskite solar cell. The SEM image of the prepared perovskite light-absorbing layer is shown below. Figure 2 As shown, see Figure 2 It can be seen that the prepared perovskite light-absorbing layer has good wettability, uniform and dense grain size distribution, and high film quality.

[0105] Examples 2-5

[0106] The perovskite solar cells of Examples 2-5 were prepared according to the preparation method of Example 1, except that the concentration of acetophenone oxime in the acetophenone oxime solution prepared in step 301 was different. The concentration of acetophenone oxime in Examples 2-5 is shown in Table 1.

[0107] Examples 6-7

[0108] The perovskite solar cells of Examples 6 and 7 were prepared according to the preparation method of Example 1, with the only difference being the thickness of the interface modification layer. The thickness of acetophenone oxime in Examples 6 and 7 is shown in Table 1.

[0109] Examples 8-11

[0110] The perovskite solar cells of Examples 8-11 were prepared according to the preparation method of Example 1, except that the type and / or amount of SAM added were different when preparing the self-assembled monolayer 2. The data on the type and amount of SAM added in Examples 8-11 are shown in Table 1.

[0111] Example 12

[0112] The perovskite solar cell of Example 12 was prepared according to the preparation method of Example 1, except that step 203 of Example 12 was: annealing the first target substrate at 90°C for 15 min to form a self-assembled monolayer 2 with a thickness of 10 nm.

[0113] Example 13

[0114] The perovskite solar cell of Example 13 was prepared according to the preparation method of Example 1, except that step 203 of Example 13 was: annealing the first target substrate at 130°C for 10 min to form a self-assembled monolayer 2 with a thickness of 10 nm.

[0115] Example 14

[0116] The perovskite solar cell of Example 14 was prepared according to the preparation method of Example 1, except that step 303 of Example 14 was: annealing the second target substrate at 90°C for 15 min to form an interface modification layer 3 with a thickness of 10 nm.

[0117] Example 15

[0118] The perovskite solar cell of Example 15 was prepared according to the preparation method of Example 1, except that step 303 of Example 15 was: annealing the second target substrate at 130°C for 10 min to form an interface modification layer 3 with a thickness of 10 nm.

[0119] Example 16

[0120] The perovskite solar cell of Example 16 was prepared according to the preparation method of Example 1, except that step 403 of Example 16 was: annealing the third target substrate at a temperature of 90°C for 35 minutes to form a perovskite light-absorbing layer 4 with a thickness of 500 nm.

[0121] Example 17

[0122] The perovskite solar cell of Example 17 was prepared according to the preparation method of Example 1, except that step 403 of Example 17 was: annealing the third target substrate at a temperature of 160°C for 15 minutes to form a perovskite light-absorbing layer 4 with a thickness of 500 nm.

[0123] Comparative Example 1

[0124] The perovskite solar cell of Comparative Example 1 was prepared according to the preparation method of Example 1, except that the interface modification layer 3 was not prepared; that is, the perovskite solar cell of Comparative Example 1 did not have the interface modification layer 3. The SEM image of the prepared perovskite light-absorbing layer is shown below. Figure 3 As shown, see Figure 3 It can be seen that the prepared perovskite light-absorbing layer has poor wettability, resulting in uneven grain size distribution, poor compactness, and rod-shaped PbI2 particles, indicating low film quality.

[0125] Table 1 Parameters of the Embodiments

[0126] Table 1

[0127]

[0128] The performance of the perovskite solar cells provided in Examples 1-17 and Comparative Example 1 of this application is tested below, and the test results are shown in Table 2.

[0129] Table 2 Performance test results of perovskite solar cells in Examples 1-17 and Comparative Example 1

[0130]

[0131] Referring to the battery performance test results of Examples 1-17 and Comparative Example 1, it can be seen that introducing an acetophenone oxime interface modification layer between the self-assembled monolayer and the perovskite light-absorbing layer can effectively improve the problem of poor wettability of the self-assembled monolayer caused by SAM molecular materials, effectively alleviate the phenomenon of uneven perovskite film coverage, and facilitate the formation of a dense and highly crystalline perovskite light-absorbing layer. At the same time, the unsaturated N atoms in the oxime group can also passivate defects at the interface between the perovskite light-absorbing layer and the self-assembled monolayer, and can also react with free Pb. + Coordination is performed to improve the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of perovskite solar cells.

[0132] Referring to the battery performance test results of Examples 1 and 6-7, it can be seen that optimizing the thickness of the interface modification layer can optimize the contact between the self-assembled monolayer and the perovskite light absorption layer, improve the hole extraction and transmission efficiency, and thus improve the short-circuit current density, open-circuit voltage and photoelectric conversion efficiency of the perovskite solar cell.

[0133] Referring to the battery performance test results of Examples 1-5, it can be seen that optimizing the concentration of acetophenone oxime can optimize the contact between the self-assembled monolayer and the perovskite light-absorbing layer, promote the effective injection and transport of holes, and thus improve the short-circuit current density, open-circuit voltage and photoelectric conversion efficiency of perovskite solar cells.

[0134] Referring to the battery performance test results of Examples 1 and 8-9, it can be seen that optimizing the concentration of SAM can effectively improve the wettability of the self-assembled monolayer, which facilitates the formation of a dense and high-crystal-quality perovskite light-absorbing layer, thereby improving the short-circuit current density, open-circuit voltage and photoelectric conversion efficiency of perovskite solar cells.

[0135] Referring to the battery performance test results of Examples 1 and 12-17, it can be seen that optimizing the annealing process of the self-assembled monolayer can optimize the contact between the self-assembled monolayer and the acetophenone oxime interface modification layer, effectively improving the wettability of the self-assembled monolayer, facilitating the formation of a dense and high-crystal-quality perovskite light-absorbing layer, thereby improving the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of the perovskite solar cell; optimizing the annealing process of the interface modification layer can optimize the contact between the self-assembled monolayer and the perovskite light-absorbing layer, promoting effective hole injection and transport, thereby improving the short-circuit current density, open-circuit voltage, and photoelectric conversion efficiency of the perovskite solar cell; optimizing the annealing process of the perovskite light-absorbing layer can improve the crystal quality and morphology of the prepared perovskite light-absorbing layer, which is beneficial to improving the photoelectric conversion efficiency of the perovskite solar cell.

[0136] This application embodiment can provide a photovoltaic cell module, including the above-described perovskite solar cell; and / or

[0137] The perovskite solar cell prepared by the above method possesses the same advantages as the perovskite solar cell.

[0138] This application provides a photovoltaic system including the aforementioned photovoltaic cell modules. The advantages of the photovoltaic cell modules are also present in this photovoltaic system, and will not be elaborated further here. The application areas of the aforementioned photovoltaic system are wide-ranging, not limited to photovoltaic power plants such as ground-mounted, rooftop, and floating power plants, but also including various solar power generation devices and apparatuses, such as user solar power supplies, solar streetlights, solar cars, and solar buildings. Of course, it is understood that the application scenarios of the photovoltaic system are not limited to these; that is, the photovoltaic system can be applied in all areas that require solar power generation. Taking a photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a combiner box, and an inverter. The photovoltaic array may be an array combination of multiple photovoltaic modules; for example, multiple photovoltaic modules can form multiple photovoltaic arrays. The photovoltaic array is connected to the combiner box, which can collect the current generated by the photovoltaic array. The collected current flows through the inverter and is converted into AC power required by the mains power grid before being connected to the mains power grid to achieve solar power supply.

[0139] It should be noted that the terms "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. The directional terms "inner" and "outer" refer to the inside or outside relative to the outline of the component itself. For example, if the device in the drawings is inverted, a device described as "above" or "on top of other devices or structures" will later be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein are interpreted accordingly.

[0140] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0141] It should also be noted that the terms "one embodiment," "another embodiment," and "embodiment" used in this application refer to specific features, structures, or characteristics described in connection with that embodiment, which are included in at least one embodiment described in the general description of this application. The appearance of the same expression in multiple places in the specification does not necessarily refer to the same embodiment. Furthermore, when a specific feature, structure, or characteristic is described in connection with any embodiment, the intention is to suggest that implementing such a feature, structure, or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0142] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0143] It should also be noted that the above are merely preferred embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A perovskite solar cell, characterized by, include: The self-assembled monolayer, the interface modification layer, and the perovskite light-absorbing layer are stacked sequentially; the material of the interface modification layer includes acetophenone oxime.

2. The perovskite solar cell according to claim 1, characterized in that, The thickness of the interface modification layer is 0.5~15nm.

3. The perovskite solar cell according to claim 2, characterized in that, The thickness of the interface modification layer is 1~10nm.

4. The perovskite solar cell according to claim 1, characterized in that, The interface modification layer is formed based on an acetophenone oxime solution; the acetophenone oxime solution includes acetophenone oxime and an organic solvent; wherein the organic solvent includes one or more of ethanol and isopropanol.

5. The perovskite solar cell according to claim 4, characterized in that, The concentration of acetophenone oxime in the acetophenone oxime solution is 0.2~1.5 mg / ml.

6. The perovskite solar cell according to claim 5, characterized in that, The concentration of acetophenone oxime in the acetophenone oxime solution is 0.4~1.2 mg / ml. 7.The perovskite solar cell of claim 1, wherein, The self-assembled monolayer material includes one or more of the following: monomolecule self-assembled materials containing phosphate groups and monomolecule self-assembled materials containing carboxylic acid groups. 8.The perovskite solar cell of claim 1, wherein, The self-assembled monolayer is formed based on a SAM solution; the SAM solution includes SAM and a polar solvent; wherein the polar solvent includes one or more of ethanol and isopropanol, and the SAM includes one or more of a single-molecule self-assembled material containing phosphate groups and a single-molecule self-assembled material containing carboxylic acid groups.

9. The perovskite solar cell according to claim 8, characterized in that, The concentration of SAM in the SAM solution is 0.2~1.0 mg / ml. 10.The perovskite solar cell of claim 1, wherein, The perovskite light-absorbing layer is formed from a perovskite precursor solution; The perovskite precursor solution comprises: perovskite material and solvent; The perovskite material includes any one of FAMAPbI, FACsPbI3, and FAMACsPbI3; The solvent includes any one of a mixed solution of N,N-dimethylformamide and dimethyl sulfoxide, or a mixed solution of γ-butyrolactone and N-methylpyrrolidone; the volume ratio of N,N-dimethylformamide to dimethyl sulfoxide in the mixed solution of N,N-dimethylformamide and dimethyl sulfoxide is 3~5:1; the volume ratio of γ-butyrolactone to N-methylpyrrolidone in the mixed solution of γ-butyrolactone and N-methylpyrrolidone is 3~5:

1.

11. The perovskite solar cell according to claim 1, characterized in that, It also includes a conductive substrate, an electron transport layer, a hole blocking layer, and metal electrodes; The conductive substrate comprises, in sequence, the self-assembled monolayer, the interface modification layer, the perovskite light absorption layer, the electron transport layer, the hole blocking layer, and the metal electrode.

12. A method of producing a perovskite solar cell, characterized by, include: A self-assembled monolayer, an interface modification layer, and a perovskite light-absorbing layer were sequentially prepared on a conductive substrate. The material of the interface modification layer includes acetophenone oxime.

13. The method for preparing a perovskite solar cell according to claim 12, characterized in that, After preparing the self-assembled monolayer and before preparing the interface modification layer, the process further includes a first annealing; the annealing temperature of the first annealing is 100~120℃, and the annealing time is 10~15min. And / or, after preparing the interface modification layer and before preparing the perovskite light absorption layer, a second annealing is performed; the annealing temperature of the second annealing is 100~120℃ and the annealing time is 10~15min; And / or, after preparing the perovskite light-absorbing layer, before preparing other functional layers on the perovskite light-absorbing layer, a third annealing is performed; the annealing temperature of the third annealing is 100~150℃, and the annealing time is 15~35min.

14. A photovoltaic cell assembly, characterized by, Includes perovskite solar cells according to any one of claims 1 to 11; and / or The perovskite solar cell prepared by the method of any one of claims 12 to 13.

15. A photovoltaic system, characterized in that, Including the photovoltaic cell module as described in claim 14.

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