一种碳化硅片及清洗方法

By combining rinsing and brushing cleaning methods, and using oxidants, acids, and alkalis to treat contaminants on the surface of silicon carbide wafers, the problem of low cleaning efficiency in existing technologies is solved, achieving efficient removal of particulate and metallic contaminants and improving the quality of semiconductor processes.

CN119387212BActive Publication Date: 2026-07-17ZHONGHUAN ADVANCED SEMICONDUCTOR TECHNOLOGY CO LTD
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHONGHUAN ADVANCED SEMICONDUCTOR TECHNOLOGY CO LTD
Filing Date
2024-11-12
Publication Date
2026-07-17

Smart Images

  • Figure CN119387212B_ABST
    Figure CN119387212B_ABST
Patent Text Reader

Abstract

本申请提供了碳化硅片及清洗方法。碳化硅片的清洗方法包括如下步骤：对碳化硅片进行第一次冲洗处理，以分解碳化硅片表面的至少部分污染物；采用清洁件刷洗碳化硅片，以使污染物脱离碳化硅片；对碳化硅片进行第二次冲洗处理，以分解去除碳化硅片表面剩余的至少部分污染物。本申请提供的碳化硅片的清洗方法通过将冲洗处理与刷洗处理相结合的工艺步骤，在有效分解和吸附碳化硅片表面有机残留物、金属等污染物的同时，更有效地去除碳化硅片表面的颗粒，提升了碳化硅片清洗工艺的整体效率。
Need to check novelty before this filing date? Find Prior Art