Photoelectric effect measurement system

By using a photoelectric effect measurement system combined with full spectrum LED lamp beads and prisms, high-precision measurement of the photoelectric effect curve of the semiconductor PN junction is achieved, solving the problems of narrow testing range and poor flexibility in the prior art.

CN119414200AActive Publication Date: 2025-02-11HARBIN INST OF TECH
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Patent Information

Application Number
CN202510021122.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-07
Publication Date
2025-02-11
Estimated Expiration
2045-01-07

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Abstract

A photoelectric effect measuring system belongs to the technical field of semiconductors. The invention aims to solve the problems of narrow test range and poor test flexibility due to the adoption of a filter wheel for filtering light with different wavelengths in the conventional photoelectric effect measurement system. Comprising a full-spectrum light generation module which is used for emitting full-spectrum light through a full-spectrum LED lamp bead, and the full-spectrum light forms parallel light through a collimating lens; the wavelength selection module is used for refracting the incident parallel light by adopting a triangular prism to obtain a single-wavelength light beam; the single-wavelength light beam is incident on a semiconductor sample; the triangular prism performs rotation angle target value control through an angle servo mechanism to change the wavelength of an emergent light beam; and the weak voltage and current detection module is used for detecting the short-circuit current and the open-circuit voltage of the semiconductor sample when different single-wavelength light beams are incident, and converting the short-circuit current and the open-circuit voltage into digital signals to be output. The method is used for semiconductor PN junction photoelectric effect measurement.
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