一种屏蔽型SiC功率器件、功率转换电路和车辆
By setting an electric field shielding structure between polygonal cells, the problem of excessive electric field in the center leakage channel of the polygonal cell and the gate oxide layer is solved, thereby improving the reverse performance and long-term reliability of the MOSFET.
CN119421455BActive Publication Date: 2026-07-17ANHUI YOFC ADVANCED SEMICONDUCTOR CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ANHUI YOFC ADVANCED SEMICONDUCTOR CO LTD
- Filing Date
- 2024-06-28
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
The center of the polygonal cell cannot be completely covered by the depletion region, resulting in excessive electric field in the leakage channel and gate oxide layer, which affects the long-term reliability of the MOSFET.
Method used
An electric field shielding structure, including horizontal and vertical parts, is set between the polygonal cell structures and connected to the source electrode through conductive pillars to form an inverted T-shaped structure, which fills the leakage area and reduces the potential of the electric field shielding structure.
Benefits of technology
This improves the reverse performance of polygonal cells, reduces the gate oxide electric field, and enhances the long-term reliability of MOSFET devices.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN119421455B_ABST
Abstract
一种屏蔽型SiC功率器件、功率转换电路和车辆，属于功率器件技术领域，该屏蔽型SiC功率器件，包括多个间隔排列的元胞结构，所述元胞结构包括衬底层及其一侧的外延层；电场屏蔽结构，设置于多个所述元胞结构之间，电场屏蔽结构包括伸入外延层内的靠近衬底层的水平部和远离衬底层的垂直部；本发明的有益效果是，本发明可增强元胞结构的反向性能，降低由中心漏电区域带来的反向漏电流，提高了器件的可靠性。
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