Preparation method and application of MOF-derived double-defect La0. 8FeO3-delta

CN119455960AActive Publication Date: 2025-02-18EAST CHINA UNIV OF SCI & TECH

Patent Information

Application Number
CN202411223542.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-03
Publication Date
2025-02-18
Estimated Expiration
2044-09-03

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Abstract

The invention belongs to the technical field of semiconductor photocatalysis and Fenton-like, and particularly relates to a preparation method and application of MOF-derived double-defect La0. 8FeO3-delta. The preparation method prepares La and O vacancy double-defect La0. 8FeO3-delta based on an MOF derivation method, and mainly comprises the following steps that ferric trichloride hexahydrate and terephthalic acid are used as raw materials, and a mixture is prepared through a hydrothermal method; the MOF material with terephthalic acid as a ligand is prepared through a solvothermal method; and reacting the prepared MOF material with lanthanum nitrate hexahydrate in an organic solvent, and calcining the reaction product to obtain the MOF-derived double-defect La0. 8FeO3-delta. An antibiotic catalytic degradation test proves that the La0. 8FeO3-delta prepared by the method has the advantages of strong anti-interference capability, high selectivity to organic matters, high catalytic degradation activity and cycling stability, and high application prospect in the field of catalytic degradation of organic pollutants such as antibiotics.
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Citation Information

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