Monoclinic-phase hafnium oxide film with adjustable orientation and preparation method of monoclinic-phase hafnium oxide film
By controlling the volatility rate and decomposition rate of the precursor in a dual-temperature chemical vapor deposition device and regulating the orientation of the hafnium dioxide film, the problem of low deposition rate and poor uniformity of the hafnium dioxide film in the prior art is solved, and high efficiency is achieved , controllable film orientation growth.
CN119465078AActive Publication Date: 2025-02-18WUHAN UNIV OF TECH
Patent Information
- Application Number
- CN202411608270.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-12
- Publication Date
- 2025-02-18
- Estimated Expiration
- 2044-11-12
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Abstract
The invention discloses a monoclinic phase hafnium oxide film with adjustable orientation and a preparation method thereof, and belongs to the technical field of film materials. The preparation method comprises the following steps: adopting a double-temperature-zone hot wall horizontal chemical vapor deposition device, placing a precursor in a first temperature zone of the deposition device, and placing a monocrystalline silicon substrate in a second temperature zone of the deposition device; the target temperature of the first temperature zone is 190-210 DEG C, the target temperature of the second temperature zone is 500-1100 DEG C, and the first temperature zone and the second temperature zone are controlled to reach the target temperature within the same time; when the temperature is about to reach the target temperature, reaction gas is introduced until the target pressure intensity is 100-2000 Pa, precursor steam in the first temperature zone is conveyed to the surface of the silicon substrate in the second temperature zone through the reaction gas for reaction, the flow of the reaction gas is 10-500 sccm, and the monoclinic-phase hafnium oxide thin film is obtained after the reaction is finished. According to the method, the orientation of the monoclinic-phase hafnium oxide film can be stably regulated and controlled, and the prepared film is continuous and uniform in structure and controllable in thickness.
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Citation Information
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