Temperature sensing system for p-type gate GaN power devices

CN119469445BActive Publication Date: 2025-04-15JINGTONG SEMICON SHENZHEN CO LTD
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Patent Information

Application Number
CN202411948580.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-12-27
Publication Date
2025-04-15
Estimated Expiration
2044-12-27

AI Technical Summary

Technical Problem

When detecting the temperature of gallium nitride power devices, the sensitivity, accuracy, linearity and repeatability are poor, and are incompatible with the mainstream processes of existing gallium nitride power devices, making it difficult to achieve practical applications.

Method used

The first parameters of the gallium nitride gate ground transistor integrated with the power element are used for temperature detection, such as forward conduction voltage, on current, and on resistance, and do not switch high voltage and are not affected by trap states. The accuracy is high, sensitivity is high, linearity is high, and the repeatability is high.

Benefits of technology

It realizes high-precision and high-sensitivity temperature detection, avoids the influence of trap state, has strong process compatibility, can be integrated on the same piece, and reduces costs.

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Abstract

The present application provides a temperature detection system for a p-type gate gallium nitride power device, comprising: a power element, a gallium nitride gate grounded transistor unit and a temperature detection unit. The power element can generate heat during operation; the gallium nitride gate grounded transistor unit includes at least one gallium nitride gate grounded transistor; and the temperature detection unit can measure a first parameter of the gallium nitride gate grounded transistor unit and determine the temperature of the gallium nitride power device according to the first parameter. The solution of the present application does not switch high voltage, is not affected by trap states, and has high accuracy, high sensitivity, high linearity, and high repeatability. The gallium nitride gate grounded transistor is fully compatible with the power element process and can be integrated on the same chip without the need for additional PCB packaging integration, thereby reducing costs; and the gallium nitride gate grounded transistor is located inside the gallium nitride power device, and the temperature detection accuracy is higher.
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Citation Information

Patent Citations

  • Power semiconductor device with temperature and voltage detection function and manufacturing method thereof

    CN112349715A

  • Encapsulated gallium nitride power module integrating current temperature detection and electrostatic protection

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