Continuous processing mechanism for double-effect plasma etching

Abstract

The invention relates to a continuous processing mechanism for double-effect plasma etching, which is used for carrying out plasma etching treatment on a substrate and comprises a high-speed etching vacuum cavity and a low-speed etching vacuum cavity. The high-speed etching vacuum cavity comprises a first radio frequency plasma module, and the first radio frequency plasma module is used for performing high-speed plasma etching on the substrate; the low-speed etching vacuum cavity is provided with a first buffer area, a linear plasma area and a second buffer area which are communicated with one another, a first linear plasma module is arranged in the linear plasma area, and the substrate can move back and forth in the first buffer area, the linear plasma area and the second buffer area so as to perform low-speed plasma etching on the substrate through the first linear plasma module. Therefore, the purpose of considering the etching efficiency of the continuous processing mechanism and the surface fineness of the substrate can be achieved.

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