SONOS flash memory device, preparation method, chip and electronic equipment
CN119486143AActive Publication Date: 2025-02-18BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY CO LTD +1
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Patent Information
- Application Number
- CN202411653732.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-19
- Publication Date
- 2025-02-18
- Estimated Expiration
- 2044-11-19
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Figure CN119486143A_ABST
Abstract
The invention relates to the technical field of semiconductors, in particular to an SONOS flash memory device, a preparation method, a chip and electronic equipment, and the preparation method comprises the steps: preparing a tunneling oxide layer on a silicon substrate; preparing a bottom silicon nitride layer on the tunneling oxide layer; carrying out ion bombardment treatment on the bottom silicon nitride layer; performing plasma passivation treatment on the bottom silicon nitride layer after the ion bombardment treatment; preparing an oxidation blocking layer above the bottom silicon nitride layer; and preparing a polycrystalline silicon gate on the barrier oxide layer. According to the technical scheme, the storage window and the reliability of the SONOS flash memory device can be improved at the same time, and the method is mainly used for preparing the SONOS flash memory device.
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Citation Information
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