Semiconductor structure and forming method thereof

Abstract

The invention provides a semiconductor structure and a forming method thereof. In one embodiment, a method includes forming a first antenna coupled with a gate structure of a transistor, the first antenna including a first metal line, forming a second antenna coupled with a source / drain feature of the transistor, the second antenna including a second metal line, where the first metal line and the second metal line are disposed within a same metallization layer, a dielectric layer is formed over the metallization layer, a plasma etching process is performed on the dielectric layer, thereby forming a first trench exposing the first metal line and a second trench exposing the second metal line, respectively, where the first trench and the second trench are formed in chronological order, and forming a first conductive via and a second conductive via in the first trench and the second trench, respectively.

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