A silicon carbide tray for rapid thermal processing and a method of rapid thermal processing

Abstract

The application provides a silicon carbide tray for rapid thermal processing and a rapid thermal processing method, the silicon carbide tray for rapid thermal processing comprises a silicon carbide base, at least three groups of cooling table limiting openings, wafer limiting columns and through holes are arranged on the silicon carbide base, the cooling table limiting openings, the wafer limiting columns and the through holes are respectively equally divided on the silicon carbide base, wherein the distance between the cooling table limiting opening and the center of the silicon carbide base is a, the distance between the wafer limiting column and the center of the silicon carbide base is b, the distance between the through hole and the center of the silicon carbide base is c, and a > b > c. The silicon carbide is made into a special structure of the tray for rapid thermal processing, the uniformity of wafer heating can be improved, the edge effect and the pattern loading effect in the wafer heating process are reduced, and a higher quality oxide film is obtained.

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