Formation method of semiconductor structure

Abstract

A method for forming a semiconductor structure comprises the following steps: providing a substrate, forming a layer to be etched on the substrate, and forming a core layer on the layer to be etched; forming first grooves which extend along the first direction and are arranged in parallel along the second direction in the core layer; forming a second groove extending along a second direction in the core layer, wherein the second groove is communicated with the first groove; first side walls are formed on the side walls of the first groove and the second groove, and the first side walls located on the side wall of the second groove are spaced; forming a second side wall covering the side wall of the first side wall, and enabling the first side wall to be in contact with the second side wall opposite to the side wall in the second groove; removing the core layer and the first side wall to form a third groove; patterning the to-be-etched layer along the first groove and the third groove to form a fourth groove and a fifth groove; forming a first target structure in the fourth groove; and forming a second target structure in the fifth trench. The performance of the semiconductor structure can be improved.

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