Preparation method of indium oxide film, gas sensor and preparation method of gas sensor

CN119529598APending Publication Date: 2025-02-28SHENZHEN NUOAN ENVIRONMENTAL & SAFETY INC
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Patent Information

Application Number
CN202411569236.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-05
Publication Date
2025-02-28

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Abstract

The invention discloses a preparation method of an indium oxide film, a gas sensor and a preparation method of the gas sensor, and relates to the technical field of sensors. The method comprises the following steps: mixing an indium ion compound, deionized water, a urea solution and a surfactant for hydrothermal reaction to obtain indium oxide powder; adding the indium oxide powder into a dispersing agent solution to obtain gas-sensitive material ink; and carrying out electrohydrodynamic printing by using the gas-sensitive material ink so as to form an indium oxide film on the surface of a micro hot plate. The invention aims to solve the problem that NO2 cannot be accurately and quickly detected due to poor gas sensitivity of the existing indium oxide film.
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