Preparation method of indium oxide film, gas sensor and preparation method of gas sensor
CN119529598APending Publication Date: 2025-02-28SHENZHEN NUOAN ENVIRONMENTAL & SAFETY INC
-1 Cites -1 Cited by
Patent Information
- Application Number
- CN202411569236.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-05
- Publication Date
- 2025-02-28
Smart Images

Figure CN119529598A_ABST
Abstract
The invention discloses a preparation method of an indium oxide film, a gas sensor and a preparation method of the gas sensor, and relates to the technical field of sensors. The method comprises the following steps: mixing an indium ion compound, deionized water, a urea solution and a surfactant for hydrothermal reaction to obtain indium oxide powder; adding the indium oxide powder into a dispersing agent solution to obtain gas-sensitive material ink; and carrying out electrohydrodynamic printing by using the gas-sensitive material ink so as to form an indium oxide film on the surface of a micro hot plate. The invention aims to solve the problem that NO2 cannot be accurately and quickly detected due to poor gas sensitivity of the existing indium oxide film.
Need to check novelty before this filing date? Find Prior Art