Display panel and display device
By setting a conductive structure in the OLED display panel corresponding to the electron transport layer and applying a positive potential to form an electric field, the problem of low electron mobility is solved, the electron mobility and current density are improved, the electron-hole combination ratio is enhanced, and the efficiency and lifespan of the display panel are improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BOE TECHNOLOGY GROUP CO LTD
- Filing Date
- 2024-11-27
- Publication Date
- 2026-06-19
AI Technical Summary
In OLED display panels, the electron mobility is less than the hole mobility, resulting in an imbalance in the number of electrons and holes reaching the light-emitting layer, which affects the efficiency and lifespan of the display panel.
A conductive structure is set in the display panel to correspond to the electron transport layer. A positive potential is applied to form an electric field, which attracts electrons in the electron transport layer, lowers the LUMO energy level, and extracts electrons from the trap energy level, thereby increasing electron mobility and concentration.
By adjusting the ratio of electrons to holes to close to 1, the efficiency and lifespan of the display panel can be improved.
Smart Images

Figure CN119546070B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of display technology, and in particular to a display panel and display device. Background Technology
[0002] A display panel is a device with display function.
[0003] Current display panels include organic light-emitting diode (OLED) display panels. In OLED display panels, electrons and holes are injected from the cathode and anode respectively through an electric field, migrate to the light-emitting layer, and recombine in the light-emitting layer to excite the light-emitting layer to achieve the light-emitting function.
[0004] However, during the migration of electrons and holes, defects can affect the electron mobility rate, causing it to be lower than that of holes. This results in a difference in the number of electrons and holes reaching the light-emitting layer, which in turn reduces the efficiency and lifespan of the display panel. Summary of the Invention
[0005] This application provides a display panel and a display device. The technical solution is as follows:
[0006] According to one aspect of this application, a display panel is provided, the display panel comprising: a driving backplate, and a plurality of light-emitting devices and a plurality of conductive structures located on the same side of the driving backplate;
[0007] The light-emitting device includes: a first electrode, a light-emitting layer, and a second electrode stacked sequentially; the light-emitting layer has an electron transport layer.
[0008] The plurality of conductive structures correspond to the plurality of light-emitting devices respectively. The conductive structure is located on at least one side of the corresponding light-emitting device in a first direction parallel to the driving back plate. The conductive structure is insulated from the corresponding light-emitting device, and the side of the conductive structure facing the corresponding light-emitting device is a first side surface. The projection of the electron transport layer in the light-emitting device onto the first side surface of the corresponding conductive structure overlaps with the first side surface.
[0009] All of the aforementioned conductive structures are connected to a positive potential.
[0010] Optionally, the light-emitting layer further comprises a hole transport layer, which is closer to the first electrode than the electron transport layer; the projection of the hole transport layer in the light-emitting device onto the first side of the corresponding conductive structure overlaps with the first side.
[0011] Optionally, the display panel further includes: a pixel definition layer, the pixel definition layer being located on the side of the conductive structure away from the driving backplate, the pixel definition layer having a plurality of pixel openings, the plurality of light-emitting devices corresponding to the plurality of pixel openings respectively, and the light-emitting layer in the light-emitting device being located within the corresponding pixel opening;
[0012] The pixel definition layer covers the plurality of conductive structures.
[0013] Optionally, the side of the light-emitting layer in the light-emitting device facing the corresponding conductive structure is the second side, and the angle between the first side and the driving backplate is equal to the angle between the second side and the driving backplate.
[0014] Optionally, the light-emitting layer includes: a hole injection layer, a hole transport layer, an organic light-emitting layer, the electron transport layer, and the electron injection layer, which are sequentially stacked along a direction perpendicular to and away from the driving backplate;
[0015] Wherein, the distance between the side of the conductive structure facing away from the driving backplate and the driving backplate is greater than or equal to the distance between the side of the electron transport layer facing away from the driving backplate and the driving backplate.
[0016] Optionally, the distance between the side of the conductive structure facing away from the driving backplate and the driving backplate is greater than or equal to the distance between the side of the electron injection layer facing away from the driving backplate and the driving backplate.
[0017] Optionally, the plurality of light-emitting devices include at least two types of light-emitting devices, wherein the lifespans of the at least two types of light-emitting devices are different;
[0018] Among them, the positive potential connected to the same type of light-emitting device is equal, and the positive potential connected to the light-emitting device is negatively correlated with the lifetime of the light-emitting device.
[0019] Optionally, the first orthographic projection of the conductive structure on the driving backplate is strip-shaped, and the second orthographic projection of the light-emitting layer in the light-emitting device on the driving backplate is polygonal; for the corresponding conductive structure and the light-emitting device, the first orthographic projection is located on one side of the second orthographic projection in the first direction, and the length of the first orthographic projection is greater than or equal to the length of the side.
[0020] Alternatively, the orthographic projection of the light-emitting layer in the light-emitting device onto the driving backplate is located within the area enclosed by the corresponding first orthographic projection.
[0021] Optionally, the driving backplane includes: a substrate, and a positive potential access signal line, a power supply line, and a plurality of pixel driving circuits located on one side of the substrate;
[0022] The plurality of pixel driving circuits are electrically connected to the plurality of light-emitting devices one by one, the power supply lines are electrically connected to the pixel driving circuits, and the positive potential access signal lines are electrically connected to the conductive structure.
[0023] The positive potential access signal line is located on the same layer as the power supply line and is made of the same material.
[0024] On the other hand, a display device is provided, comprising: a power supply component, and a display panel electrically connected to the power supply component, the display panel comprising: any of the above-described display panels.
[0025] The beneficial effects of the technical solutions provided in this application include at least the following:
[0026] A conductive structure is incorporated into the display panel, positioned at least opposite the electron transport layer of the light-emitting device. Because this conductive structure is connected to a positive potential, it attracts electrons from the electron transport layer. On one hand, the conductive structure can extract electrons from the molecular orbitals of the electron transport layer material, reducing the minimum unoccupied molecular orbital level and thus increasing electron mobility and current density. On the other hand, the conductive structure can also extract electrons from the trap energy levels, further increasing the electron concentration. This brings the number of electrons and holes closer together, thereby improving the efficiency and lifespan of the display panel. Attached Figure Description
[0027] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0028] Figure 1 This is a schematic diagram of the light-emitting process of an organic light-emitting display panel;
[0029] Figure 2 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application;
[0030] Figure 3 yes Figure 2 A schematic diagram showing the energy level changes of some structures in the provided display panel;
[0031] Figure 4 This is a schematic diagram of another display panel structure provided in an embodiment of this application;
[0032] Figure 5 This is a schematic diagram of another display panel structure provided in an embodiment of this application;
[0033] Figure 6 This is a schematic diagram of another display panel structure provided in an embodiment of this application;
[0034] Figure 7 This is a comparison chart of the lifespan curves of the display panel provided in the embodiments of this application and the display panel provided in related technologies;
[0035] Figure 8 This is a flowchart of a method for manufacturing a display panel provided in this application;
[0036] Figure 9 This is a schematic diagram of the manufacturing process of a display panel provided in this application.
[0037] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation
[0038] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.
[0039] Please refer to Figure 1 , Figure 1 This is a schematic diagram of the light-emitting process of an organic light-emitting display panel. The light-emitting process of the light-emitting device can include: under the action of the electric field between the first electrode 121 and the second electrode 123, holes are injected from the first electrode 121 into the highest occupied molecular orbital (HOMO) of the hole transport layer 122b, and then transported to the HOMO energy level of the organic light-emitting layer 122d; simultaneously, electrons are injected from the second electrode 123 into the lowest unoccupied molecular orbital (LUMO) of the electron transport layer 122a, and then transported to the LUMO energy level of the organic light-emitting layer 122d. In the organic light-emitting layer 122d, electrons and holes combine under the action of Coulomb force to form excitons, which can excite the organic light-emitting layer 122d to generate photons, thereby realizing the light-emitting function. Therefore, the efficiency and lifespan of an organic light-emitting display panel are related to the electron-hole combination ratio. For example, the closer the electron-hole combination ratio is to 1, the higher the efficiency and lifespan of the organic light-emitting display panel.
[0040] However, during the aforementioned light-emitting process, the hole mobility in the light-emitting layer 122 is greater than that of the electron mobility. This is determined by the charge transport mechanism and molecular structure of the organic semiconductor material used in the light-emitting layer 122. Therefore, the number of electrons and holes reaching the organic light-emitting layer 122d at the same time is different, resulting in an electron-hole combination ratio deviating from 1, thus leading to a decrease in efficiency. This decrease in efficiency necessitates that the light-emitting device operate at a higher current density to achieve the required brightness, but prolonged operation at high current will cause the device's lifetime to decay more rapidly.
[0041] In some related technologies, the hole injection barrier can be enhanced by adjusting the thickness of the organic film layer in the light-emitting device, thereby changing the hole transport rate to adapt to the electron rate and achieving an electron-hole binding ratio of 1. However, defects in the organic semiconductor material used in the light-emitting layer 122 can easily lead to the formation of trap levels. After the light-emitting device has been operating for a long time, electrons are easily trapped by these trap levels, preventing them from emitting light. This still causes the electron-hole binding ratio to deviate from 1, resulting in a decrease in the efficiency and lifetime of the light-emitting device.
[0042] This application provides a display panel, please refer to... Figure 2 , Figure 2 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application. The display panel 10 includes: a driving back plate 11, and a plurality of light-emitting devices 12 and a plurality of conductive structures 13 located on the same side of the driving back plate 11.
[0043] The display panel 10 provided in this application embodiment can be an OLED display panel. OLED display panels have many advantages such as self-illumination, low driving voltage, high luminous efficiency, short response time, high clarity and contrast, wide operating temperature range, and the ability to achieve flexible display and large-area full-color display.
[0044] The driving backplate 11 can be used to support other structures in the display panel 10, such as multiple light-emitting devices 12 and multiple conductive structures 13. The driving backplate 11 may also include a substrate and driving circuitry disposed on the substrate. Figure 2 (Not shown in the image), thus enabling the driving backplate 11 to be used to drive the light-emitting device 12 to emit light.
[0045] The light-emitting device 12 includes a first electrode 121, a light-emitting layer 122, and a second electrode 123 stacked sequentially. The light-emitting layer 122 has an electron transport layer 122a. Here, the light-emitting device 12 is used to emit a light beam in a direction away from the driving backplane 11. Multiple light-emitting devices 12 can be electrically connected to the driving backplane 11, so that the driving backplane 11 can control the light-emitting state and brightness of each light-emitting device 12.
[0046] The first electrode 121 can be an anode, and the second electrode 123 can be a cathode. The driving circuit in the driving backplate 11 is electrically connected to the first electrode 121 and the second electrode 123. Under the control of the driving backplate 11, the first electrode 121 can generate holes, and the second electrode 123 can generate electrons. For example, the material of the first electrode 121 may include indium tin oxide (ITO), which has a high work function of approximately 4.8 electron volts (eV), and the thickness of the first electrode 121 ranges from 10 nanometers (nm) to 30 nanometers (nm). The material of the second electrode 123 may include a magnesium-silver alloy (Mg:Ag), which has a low work function of approximately 3.7 eV, and the thickness of the second electrode 123 ranges from 10 nm to 30 nm.
[0047] It should be noted that the light-emitting layer 122 also includes an organic light-emitting layer 122d, and the electron transport layer 122a can be used to transport electrons provided by the second electrode 123 to the organic light-emitting layer 122d.
[0048] Multiple conductive structures 13 correspond to multiple light-emitting devices 12. Each conductive structure 13 is located on at least one side of the corresponding light-emitting device 12 in a first direction parallel to the driving backplate 11. The conductive structure 13 is insulated from the corresponding light-emitting device 12, and the side of the conductive structure 13 facing the corresponding light-emitting device 12 is a first side surface S1. The projection of the electron transport layer 122a in the light-emitting device 12 onto the first side surface S1 of the corresponding conductive structure 13 overlaps with the first side surface S1. Therefore, the conductive structure 13 is at least opposite to the electron transport layer 122a in the corresponding light-emitting device 12 in the first direction X. Here, the conductive structure 13 is insulated from the corresponding light-emitting device 12; that is, an insulating material is provided between the conductive structure 13 and the corresponding light-emitting device 12 in the first direction X. For example, this insulating material can be a pixel definition layer 14 for ease of manufacturing, but this embodiment is not limited to this; the insulating material can also be a separately manufactured film layer.
[0049] In this configuration, multiple conductive structures 13 are connected to a positive potential. Since the conductive structure 13 is positioned opposite to the electron transport layer 122a in the corresponding light-emitting device 12 in the first direction X, the positive potential connected to the conductive structure 13 can act on the electron transport layer 122a to change the energy level of the electron transport layer 122a.
[0050] For example, the energy level of electron transport layer 122a changes. Please refer to [reference needed]. Figure 3 , Figure 3 yes Figure 2The provided diagram illustrates the energy level changes of a portion of the display panel's structure. After a positive potential is applied to the conductive structure 13, an electric field E is formed in the pixel definition layer 14 between the conductive structure 13 and the corresponding light-emitting device 12. The direction of the electric field E is from the conductive structure 13 towards the electron transport layer 122a. The electric field E causes electrons in the molecular orbitals of the electron transport layer 122a to converge towards the conductive structure 13. This transfer of electrons in the molecular orbitals of the electron transport layer 122a results in the LUMO and HOMO energy levels becoming lower, exhibiting a downward bending trend.
[0051] The lower the LUMO energy level of the electron transport layer 122a, the easier it is for electrons to jump between the LUMO energy level of the electron transport layer 122a and the LUMO energy level of the organic light-emitting layer 122d, thereby improving electron mobility and current density. Furthermore, under the influence of the electric field E, electrons at the trap energy level of the electron transport layer 122a can also be extracted, further increasing the electron concentration and making the electron-hole binding ratio close to 1, thus improving the efficiency and lifespan of the display panel.
[0052] It should be noted that the conductive structure 13 is disposed opposite to the electron transport layer 122a in the corresponding light-emitting device 12 in the first direction X. Figure 2 This is just one example, where the conductive structure 13 is disposed opposite to multiple film layers in the light-emitting device 12. This facilitates the fabrication of the conductive structure 13 on the driving backplate 11. However, the embodiments of this application are not limited to this. For example, the conductive structure 13 may also be disposed opposite only to the electron transport layer 122a in the light-emitting device 12. Without considering the increase in manufacturing process, a portion of the pixel definition layer 14 can be fabricated on the driving backplate 11 to raise the conductive structure 13, and then the pixel definition layer 14 can be fabricated as a whole.
[0053] In summary, this application provides a display panel in which a conductive structure is disposed opposite to at least the electron transport layer in the light-emitting device. Since the conductive structure is connected to a positive potential, it attracts electrons from the electron transport layer. On one hand, the conductive structure can extract electrons from the molecular orbitals of the electron transport layer material, reducing the minimum unoccupied molecular orbital level and thus improving electron mobility and current density. On the other hand, the conductive structure can also extract electrons from the trap energy levels, further increasing the electron concentration. This makes the number of electrons and holes closer together, thereby improving the efficiency and lifespan of the display panel.
[0054] Alternatively, please refer to Figure 2The light-emitting layer 122 also has a hole transport layer 122b, which is closer to the first electrode 121 than the electron transport layer 122a. The hole transport layer 122b can be used to transport holes provided by the first electrode 121 to the organic light-emitting layer 122d.
[0055] If the projection of the hole transport layer 122b in the light-emitting device 12 onto the first side surface S1 of the corresponding conductive structure 13 overlaps with the first side surface S1, then the conductive structure 13 is also positioned opposite to the hole transport layer 122b in the first direction X. Therefore, the positive potential applied to the conductive structure 13 can also act on the hole transport layer 122b, causing a change in the energy level of the hole transport layer 122b. The energy level change trend of the hole transport layer 122b is similar to that of the electron transport layer 122a; that is, after the conductive structure 13 is applied with a positive potential, the LUMO and HOMO energy levels of the hole transport layer 122b become lower, exhibiting a downward bending trend.
[0056] The lower the HOMO energy level of the hole transport layer 122b, the weaker the hole transport capability. This reduces the hole transport speed between the HOMO energy level of the hole transport layer 122b and the HOMO energy level of the organic light-emitting layer 122d, thereby reducing the difference in the transport speed of electrons and holes and making the electron-hole combination ratio close to 1. This can improve the efficiency and lifespan of the display panel.
[0057] Additionally, please refer to Figure 3 By controlling the magnitude of the positive potential connected to the conductive structure 13, the field strength of the electric field E can be adjusted, thereby controlling the degree of bending of the LUMO and HOMO energy levels. In this way, the conductive structure 13 and the light-emitting device 12 form a structure similar to a thin-film transistor. That is, by controlling the magnitude of the positive potential connected to the conductive structure 13, the electron and hole transport speed between the first electrode 121 and the second electrode 123 can be adjusted. This high flexibility and adaptability effectively improves the efficiency and lifespan of the display panel.
[0058] The materials and structure of the conductive structure are described below:
[0059] In the embodiments of this application, please refer to Figure 4 , Figure 4 This is a schematic diagram of another display panel structure provided in an embodiment of this application. The material of the conductive structure 13 may include a metallic conductive material or a non-metallic conductive material to ensure that a positive potential can be applied and to extract electrons from the light-emitting layer 122. For example, the material of the conductive structure 13 may be metallic molybdenum (Mo). Since metallic molybdenum is also used in the driving circuit in the driving backplate 11, this facilitates manufacturing.
[0060] Optionally, the display panel 10 further includes a pixel definition layer 14, which is located on the side of the conductive structure 13 away from the driving backplate 11. The pixel definition layer 14 has a plurality of pixel openings K, and a plurality of light-emitting devices 12 correspond to the plurality of pixel openings K respectively. The light-emitting layer 122 in the light-emitting device 12 is located in the corresponding pixel opening K.
[0061] The pixel definition layer 14 covers multiple conductive structures 13. The pixel definition layer 13 is used to divide multiple light-emitting devices 12. The material of the pixel definition layer 13 can be an insulating material, so the pixel definition layer 13 can play an insulating role between the light-emitting devices 12 and the conductive structures 13.
[0062] In this application, the shape and structure of the conductive structure include various cases, which are described below with two exemplary embodiments:
[0063] Please refer to one case. Figure 5 , Figure 5 This is a schematic diagram of another display panel structure provided in an embodiment of this application. The first orthographic projection of the conductive structure 13 on the driving backplate 11 is strip-shaped, and the second orthographic projection of the light-emitting layer 122 in the light-emitting device 12 on the driving backplate 11 is polygonal. In this way, the light-emitting device 12 can at least extract electrons on one side of the light-emitting device 12.
[0064] In this case, for the corresponding conductive structure 13 and light-emitting device 12, the first orthographic projection is located on one side of one edge of the second orthographic projection in the first direction X, and the length L4 of the first orthographic projection is greater than or equal to the length L5 of one edge. The maximum width L6 of the conductive structure 13 in the first direction X can be set according to the desired electron extraction effect. For example, the width L6 can be in the range of 20 nanometers to 100 nanometers.
[0065] Please refer to another case. Figure 6 , Figure 6 This is a schematic diagram of another display panel structure provided in an embodiment of this application. The first orthographic projection of the conductive structure 13 on the driving backplate 11 is annular, and the orthographic projection of the light-emitting layer 122 in the light-emitting device 12 on the driving backplate 11 is located within the area enclosed by the corresponding first orthographic projection. In this way, the conductive structure 13 can extract electrons at various positions on the outside of the light-emitting device 12, thereby further improving the efficiency of the light-emitting device.
[0066] In this case, the width of the conductive structure 13 at each location can be approximately equal to ensure the stability and reliability of the formed electric field. For example, the width can also range from 20 nanometers to 100 nanometers.
[0067] Optionally, please refer to the setting of the spacing between the conductive structure and the light-emitting device. Figure 4 The conductive structure 13 has a first side surface S1 facing the corresponding light-emitting device 12, and the light-emitting layer 122 in the light-emitting device 12 has a second side surface S2 facing the corresponding conductive structure 13. The angle α1 between the first side surface S1 and the driving back plate 11 is equal to the angle α2 between the second side surface S2 and the driving back plate 11.
[0068] This ensures that the distance L7 between the conductive structure 13 and the light-emitting layer 122 in the corresponding light-emitting device 12 is approximately equal at all positions, thereby ensuring the reliability of the electric field between the conductive structure 13 and the light-emitting layer 122, and further improving the stability of the effect of the conductive structure 13 on improving electron mobility.
[0069] For example, the distance L7 between the conductive structure 13 and the light-emitting layer 122 in the corresponding light-emitting device 12 can be in the range of 5 nanometers to 20 nanometers. Within this range, the conductive structure 13 can effectively improve the electron mobility.
[0070] It should be noted that the first side S1 of the conductive structure 13 includes various cases, for Figure 5 The strip-shaped structure shown has a first side surface S1 of the conductive structure 13 that can be planar. For Figure 6 The ring structure shown has a first side S1 of conductive structure 13 that can be composed of multiple planes spliced together. In this case, the angles between these multiple planes and the drive backplate 11 are approximately equal.
[0071] Optionally, please refer to the following for the setting of the thickness of the conductive structure. Figure 4 Since the conductive structure 13 needs to be positioned opposite to the light-emitting layer 122 to ensure that the formed electric field can act on the light-emitting layer 122, the conductive structure 13 can be determined according to the thickness of each film layer in the light-emitting layer 122.
[0072] In this embodiment, the light-emitting layer 122 includes a hole injection layer 122c, a hole transport layer 122b, an organic light-emitting layer 122d, an electron transport layer 122a, and an electron injection layer 122e, which are sequentially stacked along a direction perpendicular to and away from the driving backplate 11.
[0073] Hole injection layer 122c is used to inject holes provided by the first electrode 121 into hole transport layer 122b. The material of hole injection layer 122c may include molybdenum oxide (MoO3), and the thickness of hole injection layer HIL ranges from 5nm to 15nm.
[0074] The hole transport layer 122b may be made of diphenyldinylbenzyldiamine (NPB), with NPB having a LUMO level of 2.4 eV and Alq3 having a HOMO level of 5.4 eV, to form a stepped energy level state that facilitates hole transport. The thickness of the hole transport layer 122b ranges from 50 nm to 100 nm.
[0075] The organic light-emitting layer 122d comprises a host light-emitting material and a guest light-emitting material doped into the host light-emitting material. The host light-emitting material of the organic light-emitting layer 122d may include 8-hydroxyquinolinealuminum salt (Alq3). The thickness of the organic light-emitting layer 122d ranges from 20 nm to 40 nm.
[0076] The electron transport layer 122a may be made of Alq3, with an LUMO level of 3.0 eV and a HOMO level of 5.7 eV, to form a stepped energy level state that facilitates electron transport. The thickness of the electron transport layer 122a ranges from 30 nm to 60 nm.
[0077] The electron injection layer 122e is used to inject electrons provided by the second electrode 123 into the electron transport layer 122a. The material of the electron injection layer 122e may include lithium fluoride (LiF). The thickness of the electron injection layer 122e ranges from 5 nm to 15 nm.
[0078] Specifically, the distance L1 between the side of the conductive structure 13 facing away from the driving backplate 11 and the driving backplate 11 is greater than or equal to the distance L2 between the side of the electron transport layer 122a facing away from the driving backplate 11 and the driving backplate 11. Thus, when the conductive structure 13 is directly disposed on the driving backplate 11, the conductive structure 13 can function for the electron transport layer 122a, the hole injection layer 122c, the hole transport layer 122b, and the organic light-emitting layer 122d. In the direction perpendicular to the driving backplate 11, the thickness of the conductive structure 13 can be greater than or equal to the sum of the thicknesses of these layers.
[0079] Optionally, the distance L1 between the side of the conductive structure 13 facing away from the driving backplate 11 and the driving backplate 11 is greater than or equal to the distance L3 between the side of the electron injection layer 122e facing away from the driving backplate 11 and the driving backplate 11. Thus, when the conductive structure 13 is directly disposed on the driving backplate 11, the conductive structure 13 can function for the electron injection layer 122e, the electron transport layer 122a, the hole injection layer 122c, the hole transport layer 122b, and the organic light-emitting layer 122d. In the direction perpendicular to the driving backplate 11, the thickness of the conductive structure 13 can be greater than or equal to the sum of the thicknesses of these layers.
[0080] In this application, a positive potential can be applied to the conductive structure by setting a positive potential connection signal line. Please refer to [reference needed]. Figure 4 The driving backplane 11 may include: a substrate 111, and a positive potential access signal line 112, a power supply line, multiple pixel driving circuits and an insulating layer 113 located on the substrate 111.
[0081] The substrate 111 can be a rigid substrate or a flexible substrate, such as a glass substrate. Multiple pixel driving circuits are electrically connected to multiple light-emitting devices 12 in a one-to-one correspondence to achieve the function of driving the corresponding light-emitting device 12. Power supply traces are electrically connected to the pixel driving circuits to provide power signals to the pixel driving circuits. The power supply traces may include high-level power supply traces (VDD) and low-level power supply traces (VSS).
[0082] The positive potential access signal line 112 is electrically connected to the conductive structure 13 to apply a positive potential to the conductive structure 13. The positive potential access signal line 112 is disposed on the same layer as the power supply trace and is made of the same material for ease of manufacture. For example, the positive potential access signal line 112 may be disposed on the same layer as the high-level power supply trace and be made of the same material.
[0083] The insulating layer 113 can serve as an insulating layer. The insulating layer 113 can have multiple vias H, which correspond to multiple conductive structures 13. The orthographic projection of the vias H on the substrate 111 overlaps with the orthographic projection of the corresponding conductive structure 13 on the substrate 111, so that the wires 112 and the conductive structures 13 are electrically connected through the vias H.
[0084] Alternatively, please refer to Figure 4 The plurality of light-emitting devices 12 include at least two types of light-emitting devices 12, and the lifespans of the at least two types of light-emitting devices 12 are different.
[0085] In this system, the positive potential connected to the same type of light-emitting device 12 is equal. The positive potential connected to the light-emitting device 12 is negatively correlated with the lifetime of the light-emitting device 12; that is, the lower the lifetime of the light-emitting device 12, the higher the positive potential connected to it. For light-emitting devices 12 with lower lifetimes, the electron-hole combination ratio is more likely to deviate from 1. Therefore, by setting a higher positive potential connected to light-emitting devices 12 with lower lifetimes, the effect of the conductive structure 13 on the electron migration speed of light-emitting devices 12 with lower lifetimes can be enhanced, thereby reducing the lifetime difference between different types of light-emitting devices 12.
[0086] For example, the plurality of light-emitting devices 12 may include: a plurality of red light-emitting devices, a plurality of green light-emitting devices, and a plurality of blue light-emitting devices. Based on the differences in the characteristics of the light-emitting materials of different colors, the lifespan of the green light-emitting devices is shorter than that of the red light-emitting devices, and the lifespan of the green light-emitting devices is longer than that of the blue light-emitting devices. The positive potential connected to the green light-emitting devices is greater than that connected to the red light-emitting devices, and the positive potential connected to the green light-emitting devices is less than that connected to the blue light-emitting devices.
[0087] This application embodiment also includes a lifespan aging test on the display panel; please refer to [link / reference]. Figure 7 , Figure 7 This is a comparison chart of the lifespan curves of the display panel provided in this application embodiment and the display panel provided in related technologies. Wherein, Figure 7 The horizontal axis represents lifespan in hours (h), and the vertical axis represents brightness, which is the result of normalization based on the brightness after 5 hours of illumination. Curve A1 is the lifespan curve of the display panel provided in the embodiment of this application. The display panel corresponding to curve A1 has a conductive structure, the specific structure of which can be referred to in the above embodiment. The positive potential connected to the conductive structure is 6 volts (V). Curve A2 is the lifespan curve of the display panel provided in the related technology. The display panel corresponding to curve A2 does not have a conductive structure.
[0088] Depend on Figure 7 It can be seen that the lifespan of curve A1 is 146 hours when the brightness decays to 95%, and the lifespan of device A2 is 112 hours when the brightness decays to 95%. Compared with related technologies, the lifespan of the display panel provided in this application embodiment is improved by 30.4%. That is, the electric field formed by the conductive structure being connected to a positive potential can improve the lifespan of the display panel.
[0089] It should be noted that curves A1 and A2 are both calculated at a current density of 20 mA / cm². 2 The lifetime curves were measured at the time of application, and the light-emitting devices in the display panel provided in this application embodiment have the same structure as the light-emitting devices in the display panel provided in the related technology, which are ITO (20nm) / MoO3 (5nm) / NPB (80nm) / Alq3 (doped light emission, 30nm) / Alq3 (40nm) / LiF (5nm) / Mg:Ag (10:1, 20nm). That is, the thickness of the first electrode is 20nm and the material is ITO, the thickness of the hole injection layer is 5nm and the material is MoO3, the thickness of the hole transport layer is 80nm and the material is NPB, the thickness of the organic light emission layer is 30nm and the material is doped light emission Alq3, the thickness of the electron transport layer is 40nm and the material is Alq3, the thickness of the electron injection layer is 5nm and the material is LiF, and the thickness of the second electrode is 20nm and the material is a magnesium-silver alloy with a ratio of 10:1.
[0090] Regarding the display panel including the conductive structure provided in the above embodiments, this application also provides a method for manufacturing the conductive structure. Please refer to... Figure 8 , Figure 8 This is a flowchart of a method for manufacturing a display panel according to this application, the method comprising:
[0091] Step 801: Obtain the driver backplane.
[0092] Please refer to Figure 9 , Figure 9 This is a schematic diagram of the manufacturing process of a display panel provided in this application. S901 is a schematic diagram of the manufacturing process corresponding to step 801. The driving backplane 11 may include a substrate 11, and conductive lines 112 and an insulating layer 113 located on the substrate 11. The manufacturing process of the conductive lines 112 may include magnetron sputtering and patterning processes. The patterning process involved in the embodiments of this application may include photoresist coating, exposure, development, etching, and photoresist stripping. Multiple vias H can be formed in the insulating layer 113 through an etching process, and conductive material can be filled into the multiple vias H so that the conductive lines 112 and the conductive structure 13 are electrically connected through the vias H.
[0093] Step 802: Form multiple conductive structures on one side of the drive backplate.
[0094] Please refer to Figure 9 S902 and S903 are schematic diagrams of the manufacturing process corresponding to step 802. A whole layer of conductive material 21 can be formed on one side of the drive back plate 11, and then the conductive material layer 21 is patterned by a patterning process through a mask M to form multiple conductive structures 13.
[0095] Step 803: Form a pixel definition layer and multiple light-emitting devices on a driving backplane with multiple conductive structures.
[0096] The pixel definition layer and multiple light-emitting devices can be formed on the same side of the driving backplane, and step 403 may include multiple sub-steps:
[0097] Sub-step 4031: Form a first electrode on a drive backplate having multiple conductive structures.
[0098] Please refer to Figure 9 S904 is a schematic diagram of the manufacturing process corresponding to sub-step 4031. The manufacturing process of the first electrode 121 may include magnetron sputtering process and patterning process. The first electrode 121 may be located on one side of the conductive structure 13 in the first direction.
[0099] Sub-step 4032: Form a pixel definition layer on the side of the conductive structure away from the driving backplane.
[0100] Please refer to Figure 9 S905 and S906 are schematic diagrams of the manufacturing process corresponding to sub-step 4032. A whole-layer pixel definition material layer 22 can be formed on one side of the drive backplate 11, and then the pixel definition material layer 22 is patterned by a patterning process through a mask M to form a pixel definition layer 14 with multiple openings K.
[0101] Sub-step 4033: A hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a second electrode are formed on the side of the first electrode away from the driving backplate.
[0102] Please refer to Figure 9 S907 is a schematic diagram of the manufacturing process corresponding to sub-step 4033. The hole injection layer 122c, hole transport layer 122b, organic light-emitting layer 122d, electron transport layer 122a, electron injection layer 122e and second electrode 123 can be formed sequentially on the side of the first electrode 121 away from the driving back plate 11 by vapor deposition and exposure and development processes.
[0103] In summary, this application provides a display panel in which a conductive structure is disposed opposite to at least the electron transport layer in the light-emitting device. Since the conductive structure is connected to a positive potential, it attracts electrons from the electron transport layer. On one hand, the conductive structure can extract electrons from the molecular orbitals of the electron transport layer material, reducing the minimum unoccupied molecular orbital level and thus improving electron mobility and current density. On the other hand, the conductive structure can also extract electrons from the trap energy levels, further increasing the electron concentration. This makes the number of electrons and holes closer together, thereby improving the efficiency and lifespan of the display panel.
[0104] On the other hand, this application also provides a display device, which includes a power supply component and a display panel provided in any of the above embodiments. The power supply component can supply power to the display panel. The display device can be any device that includes a display function. For example, the display device can be any product or component with a display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigator.
[0105] Since the display device includes the display panel provided in the above embodiments, the display device can also have similar effects, that is, it can improve the efficiency and lifespan of the display device.
[0106] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.
[0107] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" refers to two or more unless otherwise expressly defined.
[0108] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A display panel, characterized in that, The display panel includes: a driving backplate, and multiple light-emitting devices and multiple conductive structures located on the same side of the driving backplate; The light-emitting device includes: a first electrode, a light-emitting layer, and a second electrode stacked sequentially; the light-emitting layer has an electron transport layer. The plurality of conductive structures correspond to the plurality of light-emitting devices. The conductive structure is located on at least one side of the corresponding light-emitting device in a first direction parallel to the driving backplate. The conductive structure is insulated from the corresponding light-emitting device, and the side of the conductive structure facing the corresponding light-emitting device is a first side surface. The projection of the electron transport layer in the light-emitting device onto the first side surface of the corresponding conductive structure overlaps with the first side surface. The conductive structure is at least disposed opposite to the electron transport layer in the corresponding light-emitting device in the first direction. In this configuration, all of the multiple conductive structures are connected to a positive potential; an electric field is formed between the conductive structure and the corresponding light-emitting device, and the direction of the electric field is the direction from the conductive structure to the electron transport layer.
2. The display panel according to claim 1, characterized in that, The light-emitting layer also has a hole transport layer, which is closer to the first electrode than the electron transport layer; the projection of the hole transport layer in the light-emitting device onto the first side of the corresponding conductive structure overlaps with the first side.
3. The display panel according to claim 2, characterized in that, The display panel further includes: a pixel definition layer, the pixel definition layer being located on the side of the conductive structure away from the driving backplate, the pixel definition layer having a plurality of pixel openings, the plurality of light-emitting devices corresponding to the plurality of pixel openings respectively, and the light-emitting layer in the light-emitting device being located within the corresponding pixel opening; The pixel definition layer covers the plurality of conductive structures.
4. The display panel according to claim 3, characterized in that, The side of the light-emitting layer in the light-emitting device that faces the corresponding conductive structure is the second side surface, and the angle between the first side surface and the driving back plate is equal to the angle between the second side surface and the driving back plate.
5. The display panel according to any one of claims 1-4, characterized in that, The light-emitting layer includes: a hole injection layer, a hole transport layer, an organic light-emitting layer, the electron transport layer, and the electron injection layer, which are sequentially stacked along a direction perpendicular to and away from the driving backplate; Wherein, the distance between the side of the conductive structure facing away from the driving backplate and the driving backplate is greater than or equal to the distance between the side of the electron transport layer facing away from the driving backplate and the driving backplate.
6. The display panel according to claim 5, characterized in that, The distance between the side of the conductive structure facing away from the driving backplate and the driving backplate is greater than or equal to the distance between the side of the electron injection layer facing away from the driving backplate and the driving backplate.
7. The display panel according to any one of claims 1-4, characterized in that, The plurality of light-emitting devices includes at least two types of light-emitting devices, wherein the lifespans of the at least two types of light-emitting devices are different; Among them, the positive potential connected to the same type of light-emitting device is equal, and the positive potential connected to the light-emitting device is negatively correlated with the lifetime of the light-emitting device.
8. The display panel according to any one of claims 1-4, characterized in that, The conductive structure has a strip-shaped first orthographic projection on the driving backplate, and the light-emitting layer in the light-emitting device has a polygonal shape in its second orthographic projection on the driving backplate. For the corresponding conductive structure and the light-emitting device, the first orthographic projection is located on one side of the second orthographic projection in the first direction, and the length of the first orthographic projection is greater than or equal to the length of the side. Alternatively, the first orthographic projection of the conductive structure on the driving backplate is annular, and the orthographic projection of the light-emitting layer in the light-emitting device on the driving backplate is located within the area enclosed by the corresponding first orthographic projection.
9. The display panel according to any one of claims 1-4, characterized in that, The driving backplane includes: a substrate, and a positive potential access signal line, a power supply line, and multiple pixel driving circuits located on one side of the substrate; The plurality of pixel driving circuits are electrically connected to the plurality of light-emitting devices one by one, the power supply lines are electrically connected to the pixel driving circuits, and the positive potential access signal lines are electrically connected to the conductive structure. The positive potential access signal line is located on the same layer as the power supply line and is made of the same material.
10. A display device, characterized in that, include: A power supply component, and a display panel electrically connected to the power supply component, the display panel comprising: the display panel according to any one of claims 1 to 9.
Citation Information
Patent Citations
Display panel and display device
CN111446280A