一种二氧化铪蚀刻液及其制备方法
By preparing a hafnium dioxide etching solution with a specific composition, the selective etching problem of the HfO2/IGZO structure was solved, achieving selective etching of HfO2 and IGZO, and improving the performance and stability of 3D DRAM technology.
CN119552660BActive Publication Date: 2026-07-17HUBEI SINOPHORUS ELECTRONIC MATERIALS CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUBEI SINOPHORUS ELECTRONIC MATERIALS CO LTD
- Filing Date
- 2024-11-22
- Publication Date
- 2026-07-17
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Figure CN119552660B_ABST
Abstract
本发明提供一种二氧化铪蚀刻液，所述的蚀刻液成分包括占蚀刻液总重量78‑94%的二元醇、5‑20%的醇醚、0.5‑1.5%的氢氟酸、0.05‑0.15%的抑制剂。该二氧化铪蚀刻液能实现二氧化铪（HfO2）与氧化铟镓锌（IGZO）的蚀刻选择比1:1，且具有良好的蚀刻均一性。
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